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Artykuły w czasopismach na temat „Photon assisted carrier generation”

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Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 12 lutego 2022

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1

Wang, Muguang, Yu Tang, Jian Sun, Jing Zhang, Qi Ding, Beilei Wu i Fengping Yan. "Photonic-assisted FSK signal generation based on carrier phase-shifted double sideband modulation". Chinese Optics Letters 19, nr 10 (2021): 103901. http://dx.doi.org/10.3788/col202119.103901.

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Hattori, Yocefu, Jie Meng, Kaibo Zheng, Ageo Meier de Andrade, Jolla Kullgren, Peter Broqvist, Peter Nordlander i Jacinto Sá. "Phonon-Assisted Hot Carrier Generation in Plasmonic Semiconductor Systems". Nano Letters 21, nr 2 (8.01.2021): 1083–89. http://dx.doi.org/10.1021/acs.nanolett.0c04419.

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Storasta, L., R. Aleksiejūnas, M. Sūdžius, Arunas Kadys, T. Malinauskas, Kęstutis Jarašiūnas, Björn Magnusson i Erik Janzén. "Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals". Materials Science Forum 483-485 (maj 2005): 409–12. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.409.

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We applied four-wave mixing (FWM) technique for investigation of high temperaturechemical vapour deposition (HTCVD) grown 4H-SiC samples with different doping levels. The determined minority electron and hole mobilities in heavily doped crystals at doping densities of 1019 cm-3 were found to be equal to 116 and 52 cm2/Vs. In semi-insulating (SI) crystals, the ambipolar diffusion coefficient Da = 2.6 − 3.3 cm2/s and carrier lifetimes of 1.5 – 2.5 ns have been measured. Irradiation of SI crystals by 6 MeV electrons resulted in essential decrease of carrier lifetime down to ~ 100 ps and clearly revealed the defect-assisted carrier generation with respect to two-photon interband transitions before irradiation.

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4

Feng, M., E. W. Iverson, C. Y. Wang i N. Holonyak. "Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution". Applied Physics Letters 107, nr 18 (2.11.2015): 181108. http://dx.doi.org/10.1063/1.4935121.

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5

Ramazani, Ali, Farzaneh Shayeganfar, Jaafar Jalilian i Nicholas X. Fang. "Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study". Nanophotonics 9, nr 2 (25.02.2020): 337–49. http://dx.doi.org/10.1515/nanoph-2019-0363.

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AbstractExciton (strong electron–hole interactions) and hot carriers (HCs) assisted by surface plasmon polaritons show promise to enhance the photoresponse of nanoelectronic and optoelectronic devices. In the current research, we develop a computational quantum framework to study the effect of coupled exciton and HCs on the photovoltaic energy distribution, scattering process, polarizability, and light emission of two-dimensional (2D) semiconductors. Using a stable 2D semiconductor (semihydrogenated SiB) as our example, we theoretically show that external strain and thermal effect on the SiB can lead to valley polarized plasmon quasiparticles and HC generation. Our results reveal that the electron–phonon and electron–electron (e–e) interactions characterize the correlation between the decay rate, scattering of excitons, and generation of HCs in 2D semiconductors. Moreover, phonon assisted luminescence spectra of SiB suggest that light emission can be enhanced by increasing strain and temperature. The polarized plasmon with strong coupling of electronic and photonics states in SiB makes it as a promising candidate for light harvesting, plasmonic photocurrent devices, and quantum information.

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6

Davids, Paul S., Jared Kirsch, Andrew Starbuck, Robert Jarecki, Joshua Shank i David Peters. "Electrical power generation from moderate-temperature radiative thermal sources". Science 367, nr 6484 (20.02.2020): 1341–45. http://dx.doi.org/10.1126/science.aba2089.

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Moderate-temperature thermal sources (100° to 400°C) that radiate waste heat are often the by-product of mechanical work, chemical or nuclear reactions, or information processing. We demonstrate conversion of thermal radiation into electrical power using a bipolar grating-coupled complementary metal-oxide-silicon (CMOS) tunnel diode. A two-step photon-assisted tunneling charge pumping mechanism results in separation of charge carriers in pn-junction wells leading to a large open-circuit voltage developed across a load. Electrical power generation from a broadband blackbody thermal source has been experimentally demonstrated with converted power densities of 27 to 61 microwatts per square centimeter for thermal sources between 250° and 400°C. Scalable, efficient conversion of radiated waste heat into electrical power can be used to reduce energy consumption or to power electronics and sensors.

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7

Boltersdorf, Jonathan, Asher C. Leff, Gregory T. Forcherio i David R. Baker. "Plasmonic Au–Pd Bimetallic Nanocatalysts for Hot-Carrier-Enhanced Photocatalytic and Electrochemical Ethanol Oxidation". Crystals 11, nr 3 (25.02.2021): 226. http://dx.doi.org/10.3390/cryst11030226.

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Gold–palladium (Au–Pd) bimetallic nanostructures with engineered plasmon-enhanced activity sustainably drive energy-intensive chemical reactions at low temperatures with solar simulated light. A series of alloy and core–shell Au–Pd nanoparticles (NPs) were prepared to synergistically couple plasmonic (Au) and catalytic (Pd) metals to tailor their optical and catalytic properties. Metal-based catalysts supporting a localized surface plasmon resonance (SPR) can enhance energy-intensive chemical reactions via augmented carrier generation/separation and photothermal conversion. Titania-supported Au–Pd bimetallic (i) alloys and (ii) core–shell NPs initiated the ethanol (EtOH) oxidation reaction under solar-simulated irradiation, with emphasis toward driving carbon–carbon (C–C) bond cleavage at low temperatures. Plasmon-assisted complete oxidation of EtOH to CO2, as well as intermediary acetaldehyde, was examined by monitoring the yield of gaseous products from suspended particle photocatalysis. Photocatalytic, electrochemical, and photoelectrochemical (PEC) results are correlated with Au–Pd composition and homogeneity to maintain SPR-induced charge separation and mitigate the carbon monoxide poisoning effects on Pd. Photogenerated holes drive the photo-oxidation of EtOH primarily on the Au-Pd bimetallic nanocatalysts and photothermal effects improve intermediate desorption from the catalyst surface, providing a method to selectively cleave C–C bonds.

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8

Rana, Abu ul Hassan Sarwar, Shoyebmohamad F. Shaikh, Abdullah M. Al-Enizi, Daniel Adjei Agyeman, Faizan Ghani, In Wook Nah i Areej Shahid. "Intrinsic Control in Defects Density for Improved ZnO Nanorod-Based UV Sensor Performance". Nanomaterials 10, nr 1 (13.01.2020): 142. http://dx.doi.org/10.3390/nano10010142.

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Hitherto, most research has primarily focused on improving the UV sensor efficiency via surface treatments and by stimulating the ZnO nanorod (ZNR) surface Schottky barriers. However, to the best of our knowledge, no study has yet probed the intrinsic crystal defect generation and its effects on UV sensor efficiency. In this study, we undertake this task by fabricating an intrinsic defect-prone hydrothermally grown ZNRs (S1), Ga-doped ZNRs (S2), and defect-free microwave-assisted grown ZNRs (S3). The defect states were recognized by studying X-ray diffraction and photoluminescence characteristics. The large number of crystal defects in S1 and S2 had two pronged disadvantages. (1) Most of the UV light was absorbed by the defect traps and the e–h pair generation was compromised. (2) Mobility was directly affected by the carrier–carrier scattering and phonon scattering processes. Hence, the overall UV sensor efficiency was compromised based on the defect-induced mobility-response model. Considering the facts, defect-free S3 exhibited the best UV sensor performance with the highest on/off ratio, the least impulse response time, the highest recombination time, and highest gain-induced responsivity to 368 nm UV light, which was desired of an efficient passive metal oxide-based UV sensor. Our results were compared with the recently published results.

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9

Wang, Ji-Chao, Weina Shi, Xue-Qin Sun, Fang-Yan Wu, Yu Li i Yuxia Hou. "Enhanced Photo-Assisted Acetone Gas Sensor and Efficient Photocatalytic Degradation Using Fe-Doped Hexagonal and Monoclinic WO3 Phase−Junction". Nanomaterials 10, nr 2 (24.02.2020): 398. http://dx.doi.org/10.3390/nano10020398.

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The development of WO3-based gas sensors for analysis of acetone in exhaled breath is significant for noninvasive diagnosis of diabetes. A series of Fe-doped hexagonal and monoclinic WO3 phase−junction (Fe−h/m−WO3) sensors were synthesized by the hydrothermal calcination method, and the influences of operating temperature and light irradiation on the response were studied. Under light emitting diode (LED) illumination, Fe−h/m−WO3 exhibited higher responses to acetone than those of the undoped WO3-based sensors at an operating temperature of 260 °C with 90% relative humidity, and good linearity between response and acetone concentration (0.5 to 2.5 ppm) was achieved under the 90% relative humidity condition. Meanwhile, the optimal Fe−h/m−WO3 sensor exhibited high selectivity and stability for a duration of three months. The excellent sensing performance of Fe−h/m−WO3 was attributed to the formation of phase−junction and Fe doping, and these were beneficial for the separation of photon−generated carriers and oxygen adsorption on the WO3 surface, promoting the generation of superoxide radicals, which was demonstrated by electron paramagnetic resonance and photocurrent tests. Additionally, the Fe−doped WO3 phase−junction sample also showed good photocatalytic performance for rhodamine B degradation. This study may provide some insights into rational design of new types of gas sensors and offer an alternative for noninvasive diagnosis of diabetes.

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10

Ščajev, Patrik, Vytautas Gudelis, Eugeny Ivakin i Kęstutis Jarašiūnas. "Nonequilibrium carrier dynamics in bulk HPHT diamond at two-photon carrier generation". physica status solidi (a) 208, nr 9 (10.08.2011): 2067–72. http://dx.doi.org/10.1002/pssa.201100006.

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11

Fan, Weichen, Qibing Sun, Zhizhou Lu, Leiran Wang, Wei Zhao i Wenfu Zhang. "Free-carrier-assisted mid-infrared microcavity soliton generation". Journal of Applied Physics 129, nr 8 (28.02.2021): 083106. http://dx.doi.org/10.1063/5.0037921.

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12

Wang, Wei, Shaomin Wu, Randy J. Knize, Kitt Reinhardt, Yalin Lu i Shaochen Chen. "Enhanced photon absorption and carrier generation in nanowire solar cells". Optics Express 20, nr 4 (31.01.2012): 3733. http://dx.doi.org/10.1364/oe.20.003733.

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13

Goodwin, Heather, Tom C. Jellicoe, Nathaniel J. L. K. Davis i Marcus L. Böhm. "Multiple exciton generation in quantum dot-based solar cells". Nanophotonics 7, nr 1 (1.01.2018): 111–26. http://dx.doi.org/10.1515/nanoph-2017-0034.

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AbstractMultiple exciton generation (MEG) in quantum-confined semiconductors is the process by which multiple bound charge-carrier pairs are generated after absorption of a single high-energy photon. Such charge-carrier multiplication effects have been highlighted as particularly beneficial for solar cells where they have the potential to increase the photocurrent significantly. Indeed, recent research efforts have proved that more than one charge-carrier pair per incident solar photon can be extracted in photovoltaic devices incorporating quantum-confined semiconductors. While these proof-of-concept applications underline the potential of MEG in solar cells, the impact of the carrier multiplication effect on the device performance remains rather low. This review covers recent advancements in the understanding and application of MEG as a photocurrent-enhancing mechanism in quantum dot-based photovoltaics.

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14

Tessler, N., i G. Eisenstein. "Transient carrier dynamics and photon-assisted transport in multiple-quantum-well lasers". IEEE Photonics Technology Letters 5, nr 3 (marzec 1993): 291–93. http://dx.doi.org/10.1109/68.205615.

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15

Lin, Xiu-Min, Zheng-Wei Zhou i Guang-Can Guo. "Generation of polarization-entangled photon pairs through cavity-assisted interaction". Physics Letters A 348, nr 3-6 (styczeń 2006): 299–303. http://dx.doi.org/10.1016/j.physleta.2005.08.047.

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16

Qian-Hua, Du, Chen Li-Bo, Lin Gong-Wei, Chen Mei-Ying, Chen Zhi-Hua i Lin Xiu-Min. "Generation of Multiple-Photon GHZ State via Cavity-Assisted Interaction". Chinese Physics Letters 24, nr 3 (19.02.2007): 613–15. http://dx.doi.org/10.1088/0256-307x/24/3/008.

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17

McMorrow, D., W. T. Lotshaw, J. S. Melinger, S. Buchner i R. L. Pease. "Subbandgap laser-induced single event effects: carrier generation via two-photon absorption". IEEE Transactions on Nuclear Science 49, nr 6 (grudzień 2002): 3002–8. http://dx.doi.org/10.1109/tns.2002.805337.

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18

Ma, Chaoxuan, i Shayan Mookherjea. "Prospects for photon-pair generation using silicon microring resonators with two photon absorption and free carrier absorption". OSA Continuum 3, nr 5 (21.04.2020): 1138. http://dx.doi.org/10.1364/osac.392696.

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19

Kaneda, Fumihiro, Feihu Xu, Joseph Chapman i Paul G. Kwiat. "Quantum-memory-assisted multi-photon generation for efficient quantum information processing". Optica 4, nr 9 (25.08.2017): 1034. http://dx.doi.org/10.1364/optica.4.001034.

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20

Hales, Joel M., Ani Khachatrian, Nicolas J.-H. Roche, Jeffrey Warner, Stephen P. Buchner i Dale McMorrow. "Simulation of Laser-Based Two-Photon Absorption Induced Charge Carrier Generation in Silicon". IEEE Transactions on Nuclear Science 62, nr 4 (sierpień 2015): 1550–57. http://dx.doi.org/10.1109/tns.2015.2422793.

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21

Hales, Joel M., Nicolas J.-H. Roche, Ani Khachatrian, Dale Mcmorrow, Stephen Buchner, Jeffrey Warner, Marek Turowski i in. "Strong Correlation Between Experiment and Simulation for Two-Photon Absorption Induced Carrier Generation". IEEE Transactions on Nuclear Science 64, nr 5 (maj 2017): 1133–36. http://dx.doi.org/10.1109/tns.2017.2686010.

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22

Oh, Juyeong, Sun Jun Kim, Hyong Seo Yoon, Jaemin Lee, Jae Hun Kim, Yongshik Lee i Seong Chan Jun. "Energy‐Dependent Spectral Analysis of Photon‐Assisted Carrier Transport at Resonance in Graphene Oxide". Advanced Optical Materials 7, nr 5 (28.12.2018): 1800861. http://dx.doi.org/10.1002/adom.201800861.

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23

Turshatov, Andrey, Dmitry Busko, Stanislav Baluschev, Tzenka Miteva i Katharina Landfester. "Micellar carrier for triplet–triplet annihilation-assisted photon energy upconversion in a water environment". New Journal of Physics 13, nr 8 (31.08.2011): 083035. http://dx.doi.org/10.1088/1367-2630/13/8/083035.

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24

Lova, Paola, i Cesare Soci. "Black GaAs: Gold-Assisted Chemical Etching for Light Trapping and Photon Recycling". Micromachines 11, nr 6 (5.06.2020): 573. http://dx.doi.org/10.3390/mi11060573.

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Thanks to its excellent semiconductor properties, like high charge carrier mobility and absorption coefficient in the near infrared spectral region, GaAs is the material of choice for thin film photovoltaic devices. Because of its high reflectivity, surface microstructuring is a viable approach to further enhance photon absorption of GaAs and improve photovoltaic performance. To this end, metal-assisted chemical etching represents a simple, low-cost, and easy to scale-up microstructuring method, particularly when compared to dry etching methods. In this work, we show that the etched GaAs (black GaAs) has exceptional light trapping properties inducing a 120 times lower surface reflectance than that of polished GaAs and that the structured surface favors photon recycling. As a proof of principle, we investigate photon reabsorption in hybrid GaAs:poly (3-hexylthiophene) heterointerfaces.

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25

Liu, Jie, Chaoran Huang i Chester Shu. "Photonically assisted microwave waveform generation by gain-transparent SBS-induced carrier processing". Optics Letters 42, nr 19 (22.09.2017): 3852. http://dx.doi.org/10.1364/ol.42.003852.

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26

Parks, Joseph W., Kevin F. Brennan i Arlynn W. Smith. "Numerical Examination of Photon Recycling as an Explanation of Observed Carrier Lifetime in Direct Bandgap Materials". VLSI Design 8, nr 1-4 (1.01.1998): 153–57. http://dx.doi.org/10.1155/1998/16476.

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Photon recycling is examined as an explanation for the observed large carrier lifetimes in an InP/InGaAs photodiode. This effect extends the effective carrier lifetime within a device by re-absorbing a fraction of the photons generated through radiative band-toband recombination events. In order to predict the behavior of this carrier generation, photon recycling has been added to our two-dimensional macroscopic device simulator, STEBS-2D. A ray-tracing preprocessing step is used to map all of the possible trajectories and absorption of various wavelengths of emitted light from each originating node within the device. The macroscopic simulator uses these data to determine the spatial location of the re-absorbed radiation within the geometry of the device. By incorporating the ray tracer results with the total quantity and spectral content of recombined carriers at each node within the simulation, the recycled generation rate can be obtained. A practical application of this model is presented where the effects of photon recycling are used as a possible explanation of the discrepancy between the theoretically predicted and experimentally observed radiative recombination rate in a double heterostructure photodetector.

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27

Aggarwal, Neha, Shibin Krishna, Shubhendra Kumar Jain, Arzoo Arora, Lalit Goswami, Alka Sharma, Sudhir Husale, Abhiram Gundimeda i Govind Gupta. "Impact on photon-assisted charge carrier transport by engineering electrodes of GaN based UV photodetectors". Journal of Alloys and Compounds 785 (maj 2019): 883–90. http://dx.doi.org/10.1016/j.jallcom.2019.01.198.

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Velmre, Enn, Andres Udal i Mihhail Klopov. "Modeling of Photon Recycling in GaN-Devices". Materials Science Forum 483-485 (maj 2005): 1039–42. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.1039.

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The strength of recombination radiation reabsorption in GaN is discussed. For material comparisons a distance-dependent radiative recombination transfer function F(u) is introduced. In spite of high absorption rates of GaN, calculations predict ca. one order of magnitude higher photon recycling efficiency in GaN than in GaAs. Simulations of 2H-GaN p −i −n structures predict appearance of S-shaped forward I/V characteristics due to the generation of extra carriers in the base center. The study of GaN bipolar transistors shows that the radiative recombination will reduce the carrier lifetimes in the base and thereby restrict essentially the achievable current gains.

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29

Cárdenas-López, Francisco, Guillermo Romero, Lucas Lamata, Enrique Solano i Juan Retamal. "Parity-Assisted Generation of Nonclassical States of Light in Circuit Quantum Electrodynamics". Symmetry 11, nr 3 (13.03.2019): 372. http://dx.doi.org/10.3390/sym11030372.

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We propose a method to generate nonclassical states of light in multimode microwave cavities. Our approach considers two-photon processes that take place in a system composed of N extended cavities and an ultrastrongly coupled light–matter system. Under specific resonance conditions, our method generates, in a deterministic manner, product states of uncorrelated photon pairs, Bell states, and W states in different modes on the extended cavities. Furthermore, the numerical simulations show that the generation scheme exhibits a collective effect which decreases the generation time in the same proportion as the number of extended cavity increases. Moreover, the entanglement encoded in the photonic states can be transferred towards ancillary two-level systems to generate genuine multipartite entanglement. Finally, we discuss the feasibility of our proposal in circuit quantum electrodynamics. This proposal could be of interest in the context of quantum random number generator, due to the quadratic scaling of the output state.

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30

Chen, Qiao, Li-Li Zhao, Zhi Yong Wang i Zhong Xiang Xie. "Photon-Assisted Heat Generation in a Quantum Dot Device with the Charging Effect". Journal of Low Temperature Physics 174, nr 5-6 (18.12.2013): 311–21. http://dx.doi.org/10.1007/s10909-013-1007-2.

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31

Liu, Jie, Chaoran Huang i Chester Shu. "Photonically assisted microwave waveform generation by gain-transparent SBS-induced carrier processing: erratum". Optics Letters 42, nr 22 (9.11.2017): 4707. http://dx.doi.org/10.1364/ol.42.004707.

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32

Naka, Nobuko, Ikuko Akimoto i Masanobu Shirai. "Free-carrier generation by two-photon resonant excitation to the excitonic states in cuprous oxide". physica status solidi (b) 250, nr 9 (24.06.2013): 1773–76. http://dx.doi.org/10.1002/pssb.201200713.

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33

Wang, Qi, Xing Cheng, Yukun Sun, Zaicheng Sun, Dong Wang, Ge Chen i Peter Schaaf. "A synergetic effect between photogenerated carriers and photothermally enhanced electrochemical urea-assisted hydrogen generation on the Ni-NiO/Nickel Foam catalyst". Materials Advances 2, nr 6 (2021): 2104–11. http://dx.doi.org/10.1039/d1ma00038a.

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Zhang, Zhenyi, Kuichao Liu, Yanan Bao i Bin Dong. "Photo-assisted self-optimizing of charge-carriers transport channel in the recrystallized multi-heterojunction nanofibers for highly efficient photocatalytic H2 generation". Applied Catalysis B: Environmental 203 (kwiecień 2017): 599–606. http://dx.doi.org/10.1016/j.apcatb.2016.10.064.

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35

Zhang, Zhucheng, i Xiaoguang Wang. "Photon-assisted entanglement and squeezing generation and decoherence suppression via a quadratic optomechanical coupling". Optics Express 28, nr 3 (21.01.2020): 2732. http://dx.doi.org/10.1364/oe.381201.

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36

Alves, Tiago M. F., i Adolfo V. T. Cartaxo. "Power Budget of Ultra-Dense Virtual-Carrier-Assisted DD MB-OFDM Next-Generation PON". IEEE Photonics Technology Letters 28, nr 13 (1.07.2016): 1406–9. http://dx.doi.org/10.1109/lpt.2016.2542584.

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37

Jóźwikowski, K., M. Kopytko i A. Rogalski. "Numerical Estimations of Carrier Generation–Recombination Processes and the Photon Recycling Effect in HgCdTe Heterostructure Photodiodes". Journal of Electronic Materials 41, nr 10 (18.04.2012): 2766–74. http://dx.doi.org/10.1007/s11664-012-2093-7.

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38

Chi, Feng, i Lian-Liang Sun. "Photon-Assisted Heat Generation by Electric Current in a Quantum Dot Attached to Ferromagnetic Leads". Chinese Physics Letters 33, nr 11 (listopad 2016): 117201. http://dx.doi.org/10.1088/0256-307x/33/11/117201.

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39

Chen, Pai-Yen, Rodolfo Salas i Mohamed Farhat. "Generation of high-power terahertz radiation by nonlinear photon-assisted tunneling transport in plasmonic metamaterials". Journal of Optics 19, nr 12 (17.11.2017): 124012. http://dx.doi.org/10.1088/2040-8986/aa945a.

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Movsesyan, Artur, Gwénaëlle Lamri, Sergei Kostcheev, Anke Horneber, Annika Bräuer, Alfred J. Meixner, Monika Fleischer, Dai Zhang, Anne-Laure Baudrion i Pierre-Michel Adam. "Enhanced two-photon photoluminescence assisted by multi-resonant characteristics of a gold nanocylinder". Nanophotonics 9, nr 12 (9.07.2020): 4009–19. http://dx.doi.org/10.1515/nanoph-2020-0213.

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AbstractMulti-resonant plasmonic simple geometries like nanocylinders and nanorods are highly interesting for two-photon photoluminescence and second harmonic generation applications, due to their easy fabrication and reproducibility in comparison with complex multi-resonant systems like dimers or nanoclusters. We demonstrate experimentally that by using a simple gold nanocylinder we can achieve a double resonantly enhanced two-photon photoluminescence of quantum dots, by matching the excitation wavelength of the quantum dots with a dipolar plasmon mode, while the emission is coupled with a radiative quadrupolar mode. We establish a method to separate experimentally the enhancement factor at the excitation and at the emission wavelengths for this double resonant system. The sensitivity of the spectral positions of the dipolar and quadrupolar plasmon resonances to the ellipticity of the nanocylinders and its impact on the two-photon photoluminescence enhancement are discussed.

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41

Usami, Noritaka, Wugen Pan, Takeshi Tayagaki, Sai Tak Chu, Jensen Li, Tianhua Feng, Yusuke Hoshi i Takanori Kiguchi. "Simultaneous enhanced photon capture and carrier generation in Si solar cells using Ge quantum dot photonic nanocrystals". Nanotechnology 23, nr 18 (13.04.2012): 185401. http://dx.doi.org/10.1088/0957-4484/23/18/185401.

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42

Inoue, Akito, Toru Okino, Shinzo Koyama i Yutaka Hirose. "Modeling and Analysis of Capacitive Relaxation Quenching in a Single Photon Avalanche Diode (SPAD) Applied to a CMOS Image Sensor". Sensors 20, nr 10 (25.05.2020): 3007. http://dx.doi.org/10.3390/s20103007.

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We present an analysis of carrier dynamics of the single-photon detection process, i.e., from Geiger mode pulse generation to its quenching, in a single-photon avalanche diode (SPAD). The device is modeled by a parallel circuit of a SPAD and a capacitance representing both space charge accumulation inside the SPAD and parasitic components. The carrier dynamics inside the SPAD is described by time-dependent bipolar-coupled continuity equations (BCE). Numerical solutions of BCE show that the entire process completes within a few hundreds of picoseconds. More importantly, we find that the total amount of charges stored on the series capacitance gives rise to a voltage swing of the internal bias of SPAD twice of the excess bias voltage with respect to the breakdown voltage. This, in turn, gives a design methodology to control precisely generated charges and enables one to use SPADs as conventional photodiodes (PDs) in a four transistor pixel of a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) with short exposure time and without carrier overflow. Such operation is demonstrated by experiments with a 6 µm size 400 × 400 pixels SPAD-based CIS designed with this methodology.

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Xiao, Jiangnan, Chuang Zhao, Xingxing Feng, Xu Dong, Jiangli Zuo, Jun Ming i Ye Zhou. "Review on the Millimeter-Wave Generation Techniques Based on Photon Assisted for the RoF Network System". Advances in Condensed Matter Physics 2020 (8.12.2020): 1–14. http://dx.doi.org/10.1155/2020/6692941.

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With the development trend of wireless and broadband in the communication link and even the whole information industry, the demand of high-frequency microwave bandwidth has been increasing. The RoF network system solves the problem of spectrum congestion in low-frequency band by providing an effective technology for the distribution of high-frequency microwave signals over optical fiber links. However, the traditional mm-wave generation technique is limited by the bandwidth of electronic devices. It is difficult to generate high-frequency and low-phase noise mm-wave signals with pure electrical components. The mm-wave communication technology based on photon assisted can overcome the bandwidth bottleneck of electronic devices and provide the potential for developing the low-cost infrastructure demand of broadband mobile services. This paper will briefly explain the characteristics of the RoF network system and the advantages of high-frequency mm-wave. Then we, respectively, introduce the modulation schemes of RoF mm-wave generation based on photon assisted including directly modulated laser (DML), external modulation, and optical heterodyne. The review mainly focuses on a variety of different mm-wave generation technologies including multifrequency vector mm-wave. Furthermore, we list several approaches to realize the large capacity data transmission techniques and describe the digital signal processing (DSP) algorithm flow in the receiver. In the end, we summarize the RoF network system and look forward to the future.

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Zhang, Jiaxin, Xing Zhang, Chang Liu, Wenbo Wang, Yami Chen, Gang Li, Zhengang Pan i Chih-Lin I. "Theoretical study and performance evaluation of macro-assisted data-only carrier for next generation 5G system". International Journal of Communication Systems 30, nr 2 (3.02.2015): e2938. http://dx.doi.org/10.1002/dac.2938.

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Roy, Palas, i Jyotishman Dasgupta. "Temporal probing of excitons in organic semiconductors". Pure and Applied Chemistry 92, nr 5 (26.05.2020): 707–16. http://dx.doi.org/10.1515/pac-2018-1230.

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AbstractPhotoinduced charge generation forms the physical basis for energy conversion in organic photovoltaic (OPV) technology. The fundamental initial steps involved are absorption of light by organic semiconductors (generally π-conjugated polymers) to generate photoexcited states (Frenkel excitons) followed by charge transfer and charge separation processes in presence of suitable acceptor. The absorbed photon energy must be utilized completely for achieving maximum device efficiency. However progressive relaxation losses of instantaneously generated high-energy or hot-excited states form major bottleneck for maximum derivable voltage. This efficiency limiting factor has been challenged recently by the role of hot-carriers in efficient generation of charges. Therefore tailoring the dissociation of hot-exciton to be temporally faster than all relaxation processes could minimize the energy loss pathways. Implementation of this concept of hot-carrier photovoltaics demands critical understanding of molecular parameters that circumvent all energy relaxation processes and favor hot-carrier generation. In my dissertation work, I have examined the fate of photo-generated excitons in the context of polymer backbone and morphology, and therefore obtain a fundamental structure-function correlation in organic semiconductors.

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Ocampo, C. A. Álvarez, Carlos A. Rodríguez i Rodrigo Acuna Herrera. "Detecting ultra-fast and near-infrared pulses based on two-photon absorption in multiple quantum wells". Journal of Nonlinear Optical Physics & Materials 28, nr 02 (czerwiec 2019): 1950013. http://dx.doi.org/10.1142/s0218863519500139.

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A theoretical framework and the computational infrastructure for optical characterization of a waveguide (WG) photodetector (PD) are presented based on multiples quantum well (MQW) with a rib structure that is able to resolve a light pulse with a temporal width of 10[Formula: see text]fs. Such pulses are limited to the C-band of optical telecommunications. This pulse width is shorter than the temporal resolution limit of a commercial PD, due to the nonlinear phenomenon known as nondegenerate two-photon absorption (ND2PA). The results show the importance of the operating characteristics that affect carrier generation rate (CGR).

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Liaugaudas, Gediminas, Kęstutis Jarašiūnas, Nikolaos Tsavdaris, Eirini Sarigiannidou i Didier Chaussende. "On Photoelectrical Properties of 6H-SiC Bulk Crystals PVT-Grown on 6H- and 4H-SiC Substrates". Materials Science Forum 778-780 (luty 2014): 305–8. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.305.

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Free carrier lifetimes and diffusion coefficients were determined in 6H-SiC bulk crystals grown by PVT on 6H-and 4H-SiC seeds varying the temperature from 300 K to 650 K and at excess carrier densities ΔN0from 1017cm-3to 1019cm-3. Carrier generation was achieved by using a single or two-photon absorption of picosecond pulses at 351 and 532 nm, respectively. Fast and slow recombination transients revealed the decay time of free carriers and the presence of deep acceptor traps. The thermal trap activation energyEa= 0.33 eV was determined in the 6H/4H sample and ascribed to the boron, while the presence of deeper traps is suggested in the 6H/6H sample. At room temperature and reaching conditions of trap saturation regime (ΔN01019cm3), both crystals revealed the bipolar diffusion coefficientDa4 cm2/s. For comparison, we also determined the photoelectrical parameters in commercial 6H-SiC crystals grown by the Lely and PVT techniques.

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Ren, Hai Zhen, Lin Feng Yang, Xiang Hong Ge i Yu Guang Zhang. "Optimizing High Harmonic Generation in Hollow Core Photonic Crystal Fiber as New Optical Waveguide Materials". Advanced Materials Research 531 (czerwiec 2012): 571–74. http://dx.doi.org/10.4028/www.scientific.net/amr.531.571.

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We investigated the high harmonic generation (HHG) from the interaction of intense femtosecond laser pulse and rare gas in the hollow core photonic crystal fiber(HCPCF) as new optical waveguide materials. The grating-assisted phase matching (GAPM) of HHG in HCPCF is demonstrated to be experimentally feasible and is especially suitable for photon energies in the range of 100~1keV. The conversion efficiency is expected to be dramatically improved for the longer interaction length provided by the very low loss of HCPCF.

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Khurgin, Jacob B. "Fundamental limits of hot carrier injection from metal in nanoplasmonics". Nanophotonics 9, nr 2 (25.02.2020): 453–71. http://dx.doi.org/10.1515/nanoph-2019-0396.

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AbstractThe evolution of non-equilibrium carriers excited in the process of decay of surface plasmon polaritons (SPPs) in metal is described for each step – from the generation of carriers to their extraction from the metal. The relative importance of various carrier-generating mechanisms is discussed. It is shown that both the generation of carriers and their decay are inherently quantum processes as, for realistic illumination conditions, no more than a single SPP per nanoparticle exists at a given time. As a result, the distribution of non-equilibrium carriers cannot be described by a single temperature. It is also shown that the originally excited carriers that have not undergone a single electron-electron scattering event are practically the only ones that contribute to the injection. The role of momentum conservation in carrier extraction is discussed, and it is shown that, if all the momentum conservation rules are relaxed, it is the density of states in the semiconductor/dielectric that determines the ultimate injection efficiency. A set of recommendations aimed at improving the efficiency of plasmonic-assisted photodetection and (to a lesser degree) photocatalysis is made in the end.

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Alves, Tiago M. F., i Adolfo V. T. Cartaxo. "Virtual Carrier-Assisted Direct-Detection MB-OFDM Next-Generation Ultra-Dense Metro Networks Limited by Laser Phase Noise". Journal of Lightwave Technology 33, nr 19 (1.10.2015): 4093–100. http://dx.doi.org/10.1109/jlt.2015.2461013.

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