Gotowa bibliografia na temat „Photon assisted carrier generation”
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Artykuły w czasopismach na temat "Photon assisted carrier generation"
Wang, Muguang, Yu Tang, Jian Sun, Jing Zhang, Qi Ding, Beilei Wu i Fengping Yan. "Photonic-assisted FSK signal generation based on carrier phase-shifted double sideband modulation". Chinese Optics Letters 19, nr 10 (2021): 103901. http://dx.doi.org/10.3788/col202119.103901.
Pełny tekst źródłaHattori, Yocefu, Jie Meng, Kaibo Zheng, Ageo Meier de Andrade, Jolla Kullgren, Peter Broqvist, Peter Nordlander i Jacinto Sá. "Phonon-Assisted Hot Carrier Generation in Plasmonic Semiconductor Systems". Nano Letters 21, nr 2 (8.01.2021): 1083–89. http://dx.doi.org/10.1021/acs.nanolett.0c04419.
Pełny tekst źródłaStorasta, L., R. Aleksiejūnas, M. Sūdžius, Arunas Kadys, T. Malinauskas, Kęstutis Jarašiūnas, Björn Magnusson i Erik Janzén. "Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals". Materials Science Forum 483-485 (maj 2005): 409–12. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.409.
Pełny tekst źródłaFeng, M., E. W. Iverson, C. Y. Wang i N. Holonyak. "Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution". Applied Physics Letters 107, nr 18 (2.11.2015): 181108. http://dx.doi.org/10.1063/1.4935121.
Pełny tekst źródłaRamazani, Ali, Farzaneh Shayeganfar, Jaafar Jalilian i Nicholas X. Fang. "Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study". Nanophotonics 9, nr 2 (25.02.2020): 337–49. http://dx.doi.org/10.1515/nanoph-2019-0363.
Pełny tekst źródłaDavids, Paul S., Jared Kirsch, Andrew Starbuck, Robert Jarecki, Joshua Shank i David Peters. "Electrical power generation from moderate-temperature radiative thermal sources". Science 367, nr 6484 (20.02.2020): 1341–45. http://dx.doi.org/10.1126/science.aba2089.
Pełny tekst źródłaBoltersdorf, Jonathan, Asher C. Leff, Gregory T. Forcherio i David R. Baker. "Plasmonic Au–Pd Bimetallic Nanocatalysts for Hot-Carrier-Enhanced Photocatalytic and Electrochemical Ethanol Oxidation". Crystals 11, nr 3 (25.02.2021): 226. http://dx.doi.org/10.3390/cryst11030226.
Pełny tekst źródłaRana, Abu ul Hassan Sarwar, Shoyebmohamad F. Shaikh, Abdullah M. Al-Enizi, Daniel Adjei Agyeman, Faizan Ghani, In Wook Nah i Areej Shahid. "Intrinsic Control in Defects Density for Improved ZnO Nanorod-Based UV Sensor Performance". Nanomaterials 10, nr 1 (13.01.2020): 142. http://dx.doi.org/10.3390/nano10010142.
Pełny tekst źródłaWang, Ji-Chao, Weina Shi, Xue-Qin Sun, Fang-Yan Wu, Yu Li i Yuxia Hou. "Enhanced Photo-Assisted Acetone Gas Sensor and Efficient Photocatalytic Degradation Using Fe-Doped Hexagonal and Monoclinic WO3 Phase−Junction". Nanomaterials 10, nr 2 (24.02.2020): 398. http://dx.doi.org/10.3390/nano10020398.
Pełny tekst źródłaŠčajev, Patrik, Vytautas Gudelis, Eugeny Ivakin i Kęstutis Jarašiūnas. "Nonequilibrium carrier dynamics in bulk HPHT diamond at two-photon carrier generation". physica status solidi (a) 208, nr 9 (10.08.2011): 2067–72. http://dx.doi.org/10.1002/pssa.201100006.
Pełny tekst źródłaRozprawy doktorskie na temat "Photon assisted carrier generation"
Meitzner, Karl. "Heterojunction-Assisted Impact Ionization and Other Free Carrier Dynamics in Si, ZnS/Si, and ZnSe/Si". Thesis, University of Oregon, 2015. http://hdl.handle.net/1794/19294.
Pełny tekst źródłaRuess, Frank Joachim Physics Faculty of Science UNSW. "Atomically controlled device fabrication using STM". Awarded by:University of New South Wales. Physics, 2006. http://handle.unsw.edu.au/1959.4/24855.
Pełny tekst źródłaHamad, Hassan. "Détermination des coefficients d'ionisation de matériaux à grand gap par génération multi-photonique". Thesis, Lyon, INSA, 2015. http://www.theses.fr/2015ISAL0017/document.
Pełny tekst źródłaIn the last few decades, the use of wide bandgap (WBG) semiconductors (silicon carbide SiC, gallium nitride GaN, diamond, etc…) has become popular in the domain of power electronics. Their electronic and mechanical characteristics made of the WBGs a good alternative to the traditional silicon. However, additional studies are mandatory to improve the breakdown voltage, static and dynamic losses, and the performance at high temperature of the WBG devices. In this context, two specific experimental benches OBIC (Optical Beam Induced Current) -under development- are set up during this thesis. OBIC method consists to generate free charge carriers in a reverse biased junction by illuminating the device with an appropriate wavelength. An OBIC signal is measured if the charge carriers are generated in the space charge region. After a first phase of preparation and adaptation of the experimental environment, OBIC measurements led to demonstrate the multi-photonic generation by illuminating a SiC junction with a green laser (532 nm). OBIC measurements allowed giving an image of the electric field at the surface of the diode: OBIC presents a non-destructive analysis to study the efficiency of the peripheral protection and to detect the defects in the semi-conductor. Minority carrier lifetime was also deduced by studying the OBIC decrease at the edge of the space charge region. Ionization rates were extracted using OBIC method; these coefficients are key parameters to predict the breakdown voltage of the devices. OBIC measurements were also realized on the GaN, and two-photon generation was highlighted by measuring an OBIC current in the diamond when illuminating it with a UV laser beam (349 nm)
Tritsch, John Russell. "Electron dynamics in nanomaterials for photovoltaic applications by time-resolved two-photon photoemission". 2013. http://hdl.handle.net/2152/21695.
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Części książek na temat "Photon assisted carrier generation"
Pevzner, V. B., V. L. Gurevich, K. Hess i G. J. Iafrate. "Phonon Generation in Nanowires and Non-ohmic Phonon-Assisted Landauer Resistance". W Hot Carriers in Semiconductors, 239–42. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_55.
Pełny tekst źródłaNozik, Arthur J., i Olga I. Mićić*. "Quantum Dots and Quantum Dot Arrays: Synthesis, Optical Properties, Photogenerated Carrier Dynamics, Multiple Exciton Generation, and Applications to Solar Photon Conversion". W Nanocrystal Quantum Dots, 311–68. CRC Press, 2017. http://dx.doi.org/10.1201/9781420079272-9.
Pełny tekst źródłaTiwari, Sandip. "Light interactions with semiconductors". W Semiconductor Physics, 454–92. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198759867.003.0012.
Pełny tekst źródłaLee, Byunghong, i Robert Bob Chang. "A New Generation of Energy Harvesting Devices". W Solar Cells [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.94291.
Pełny tekst źródłaStreszczenia konferencji na temat "Photon assisted carrier generation"
Glowacki, Arkadiusz, Carlo Pagano, Christian Boit, Yoshiyuki Yokoyama, Arkadiusz Jankowski i Philippe Perdu. "Photon Emission Spectra through Silicon of Various Thicknesses". W ISTFA 2011. ASM International, 2011. http://dx.doi.org/10.31399/asm.cp.istfa2011p0164.
Pełny tekst źródłaSiregar, Masbah R. T., i Lamhot Hutagalung. "Dynamics of carrier generation by photon absorption in semiconductor gallium arsenide". W INTERNATIONAL CONFERENCE ON THEORETICAL AND APPLIED PHYSICS (LCTAP 2012). AIP, 2013. http://dx.doi.org/10.1063/1.4820984.
Pełny tekst źródłaKlimentov, Sergei M., Serge V. Garnov, Alexander S. Epifanov, Alexander A. Manenkov i D. M. Sagatelyan. "Two-photon spectroscopy of free-carrier generation in wide-band gap crystals". W Laser-Induced Damage in Optical Materials: 1996, redaktorzy Harold E. Bennett, Arthur H. Guenther, Mark R. Kozlowski, Brian E. Newnam i M. J. Soileau. SPIE, 1997. http://dx.doi.org/10.1117/12.274252.
Pełny tekst źródłaAlvarez Ocampo, C. A., i Rodrigo Acuna Herrera. "Nondegenerate Two Photon Carrier Generation in Multiple Quantum Well for the C-Band Telecommunication". W Frontiers in Optics. Washington, D.C.: OSA, 2017. http://dx.doi.org/10.1364/fio.2017.jw3a.17.
Pełny tekst źródłaVidavskii, A. E., Valeri I. Kovalev i V. M. Raukhman. "DFWM reflectivity via two-photon free carrier generation in semiconductors in middle-IR range". W Laser Optics '95, redaktor Vladimir E. Sherstobitov. SPIE, 1996. http://dx.doi.org/10.1117/12.238051.
Pełny tekst źródłaVölk, Stefan, Florian J. R. Schülein, Florian Knall, Achim Wixforth, Hubert J. Krenner, Arne Laucht, Jonathan J. Finley i in. "Recent progress towards acoustically mediated carrier injection into individual nanostructures for single photon generation". W OPTO, redaktorzy Kurt G. Eyink, Frank Szmulowicz i Diana L. Huffaker. SPIE, 2010. http://dx.doi.org/10.1117/12.842511.
Pełny tekst źródłaHuang, Chun-Yuan, i Yi-Hsiu Hsieh. "Tunneling-assisted carrier transfer in pentacene-based thin-film transistors with a MoO3 buffer layer". W 2018 7th International Symposium on Next Generation Electronics (ISNE). IEEE, 2018. http://dx.doi.org/10.1109/isne.2018.8394623.
Pełny tekst źródłaChekalin, Sergey V., M. S. Kurdoglyan, Anatoly N. Oraevsky, N. F. Starodubtsev, Arkady P. Yartsev i Villy Sundstrom. "Femtosecond pump-probe investigation of primary stages of charge carrier generation in pure and Sn- and Ti- doped C60 films". W PECS'2001: Photon Echo and Coherent Spectroscopy, redaktor Vitaly V. Samartsev. SPIE, 2001. http://dx.doi.org/10.1117/12.447961.
Pełny tekst źródłaMehrotra, Akhil, Gopi K. Vijaya i Alex Freundlich. "Drift-diffusion modeling of a superlattice p-i-n device with resonant conduction-band assisted photon absorption and carrier". W 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925102.
Pełny tekst źródłaHouse, Ralph L., Brian P. Mehl, Chuan Zhang, Justin R. Kirschbrown, Scott C. Barnes i John M. Papanikolas. "Investigation of ultrafast carrier dynamics in ZnO rods using two-photon emission and second harmonic generation microscopy". W SPIE NanoScience + Engineering, redaktorzy Oliver L. A. Monti i Oleg V. Prezhdo. SPIE, 2009. http://dx.doi.org/10.1117/12.826064.
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