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Artykuły w czasopismach na temat "Photoluminescence"

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Liu, Qing, Lu Liu, Cao-Ming Yu, Pei-Xin Li i Guo-Cong Guo. "Two viologen-based photoluminescent compounds: excitation-wavelength-dependent and photoirradiation-time-dependent photoluminescent switches". CrystEngComm 23, nr 21 (2021): 3856–60. http://dx.doi.org/10.1039/d1ce00072a.

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We synthesized two isostructural multi-coloured photoluminescent coordination polymers. They exhibit excitation-wavelength-dependent photoluminescence emission and photoirradiation-time-dependent photoluminescence emission in solid-state.
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Zhang, Hua, Jun Cheng Liu i Jiao Li. "Research on Photoluminescence Characteristics of the Active Cl-Doped ZnS". Advanced Materials Research 284-286 (lipiec 2011): 2276–79. http://dx.doi.org/10.4028/www.scientific.net/amr.284-286.2276.

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A active Cl-doping for photoluminescent ZnS powder has been carried out by thermal decomposed AlCl3·6H2O in a quartz tube. Room temperature photoluminescence of the Cl-doped ZnS powder has been investigated using a photoluminescence spectrometer with 365 nm excitation wave length. A strong blue photoluminescence with maximum peak about 450 nm and green photoluminescence with maximum peak about 500 nm can be observed if the doping temperature in range of 800 ~ 900 °C and 1100 ~1200 °C, respectively. The structural characterizations of the Cl-doped ZnS powders were performed with X-ray diffraction (XRD) and the mechanism of photoluminescence was preliminarily discussed.
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Гагис, Г. С., А. С. Власов, Р. В. Левин, А. Е. Маричев, М. П. Щеглов, Т. Б. Попова, Б. Я. Бер i in. "Люминесцентные свойства выращенных на InP слоев GaInAsP с градиентом состава по толщине". Письма в журнал технической физики 45, nr 20 (2019): 22. http://dx.doi.org/10.21883/pjtf.2019.20.48388.17954.

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The photoluminescent properties at 77 and 300 K are investigated for Ga1 xInxAsyP1 y epilayers with V-group elements content gradient Δy up to 0.08 across whole thickness (about 1 µm). Ga1 xInxAsyP1 y layers with high Δy values have widened photoluminescence spectra. For GaInAsP layers of low crystaline perfection, photoluminescence was either absent or manifested itself as it is typical for transitions involving impurity levels.
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Мазинг, Д. С., Н. М. Романов, В. А. Мошников, О. А. Александрова i О. А. Корепанов. "Исследование спектров фотолюминесценции нанокристаллов AgInS-=SUB=-2-=/SUB=-/ZnS при воздействии γ-излучения". Письма в журнал технической физики 45, nr 21 (2019): 34. http://dx.doi.org/10.21883/pjtf.2019.21.48471.17948.

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The effect of different doses of γ-radiation from a 137Cs source on photoluminescence of Ag-In-S nanocrystals covered with a shell of wider bandgap ZnS was investigated. The dynamics of changes in the nanocrystals photoluminescence depending on the dose of γ-radiation was shown. It was established that the AgInS2 / ZnS nanoparticles retain their photoluminescent properties and colloidal stability upon reaching the absorbed dose of 6 • 10^3 Gy (to water). Residual photoluminescence persisted when the absorbed dose reached 10^6 Gy. It was shown that AgInS2 / ZnS nanocrystals can be used in medical and biological studies in which increased resistance to gamma radiation is needed.
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Han, Lei, Shi Gang Liu, Jiang Xue Dong, Jia Yu Liang, Ling Jie Li, Nian Bing Li i Hong Qun Luo. "Facile synthesis of multicolor photoluminescent polymer carbon dots with surface-state energy gap-controlled emission". J. Mater. Chem. C 5, nr 41 (2017): 10785–93. http://dx.doi.org/10.1039/c7tc03314a.

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Pan, Xiaoyong, Wei Ren, Liuqun Gu, Guan Wang i Ye Liu. "Photoluminescence from Chitosan for Bio-Imaging". Australian Journal of Chemistry 67, nr 10 (2014): 1422. http://dx.doi.org/10.1071/ch14274.

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Photoluminescent behaviours of chitosan were investigated. Photoluminescence can be observed from aqueous solution of chitosan, and CO2 treatment can improve the intensity of photoluminescence. The maximum emission is obtained with an excitation at ~336 nm, and the emission wavelength is dependent on the excitation wavelength with a longer excitation wavelength leading to a longer emission wavelength. The chemistry of chitosan before and after CO2 treatment was characterised; and the results reflect that carbamato anion is formed via the reaction between the amines and CO2, and is the fluorophore of the photoluminescence observed. Furthermore, chitosan was applied as an imaging agent for imaging MCF-7 cells using confocal microscopy. Blue and bright green imaging of the cells can be obtained via tuning the excitation and emission wavelength. Together with a low cytotoxicity reflected by 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide evaluation, fluorescent chitosan is promising for bio-imaging.
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Wang, Ze-Ping, Jin-Yun Wang, Jian-Rong Li, Mei-Ling Feng, Guo-Dong Zou i Xiao-Ying Huang. "[Bmim]2SbCl5: a main group metal-containing ionic liquid exhibiting tunable photoluminescence and white-light emission". Chemical Communications 51, nr 15 (2015): 3094–97. http://dx.doi.org/10.1039/c4cc08825e.

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Song, Tianming, Yawei Qu, Zhe Ren, Shuang Yu, Mingjian Sun, Xiaoyu Yu i Xiaoyang Yu. "Synthesis and Characterization of Polyvinylpyrrolidone-Modified ZnO Quantum Dots and Their In Vitro Photodynamic Tumor Suppressive Action". International Journal of Molecular Sciences 22, nr 15 (28.07.2021): 8106. http://dx.doi.org/10.3390/ijms22158106.

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Despite the numerous available treatments for cancer, many patients succumb to side effects and reoccurrence. Zinc oxide (ZnO) quantum dots (QDs) are inexpensive inorganic nanomaterials with potential applications in photodynamic therapy. To verify the photoluminescence of ZnO QDs and determine their inhibitory effect on tumors, we synthesized and characterized ZnO QDs modified with polyvinylpyrrolidone. The photoluminescent properties and reactive oxygen species levels of these ZnO/PVP QDs were also measured. Finally, in vitro and in vivo experiments were performed to test their photodynamic therapeutic effects in SW480 cancer cells and female nude mice. Our results indicate that the ZnO QDs had good photoluminescence and exerted an obvious inhibitory effect on SW480 tumor cells. These findings illustrate the potential applications of ZnO QDs in the fields of photoluminescence and photodynamic therapy.
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Хайдуков, К. В., И. В. Крылов, М. Е. Николаева, В. В. Рочева i Е. В. Хайдуков. "Наночастицы NaLuF-=SUB=-4-=/SUB=-: Yb-=SUP=-3+-=/SUP=-, Er-=SUP=-3+-=/SUP=-, Ce-=SUP=-3+-=/SUP=- для создания компактных волноводных усилителей и визуализации в ближнем ИК диапазоне спектра". Оптика и спектроскопия 131, nr 5 (2023): 655. http://dx.doi.org/10.21883/os.2023.05.55718.75-22.

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Fluoride nanocrystals co-doped with lanthanide ions are well known due to the possibility of conversion near-infrared (NIR) radiation into photoluminescence with large anti-Stokes shift. Owing to upconversion effect, such nanomaterials have shown great potential in photonics and biomedicine. However, fluoride nanoparticles can be reconfigured to photoluminescence with a Stokes shift into the near-infrared region of the spectrum. In this work, we focused on the properties of NaRF4: Yb3+, Er3+, Ce3+ (R = Y, Lu) nanoparticles exhibiting intense stokes luminescence in the vicinity of 1530 nm at 975 nm excitation. Photoluminescence quantum efficiency of synthesized nanoparticles was evaluated as 28% at 0.6 W/cm2 excitation intensity. Based on the photoluminescent properties of nanoparticles we designed compact waveguide amplifier for C-band telecommunication and developed time gated imaging system for NIR-to-NIR biovisualization.
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Hrytsenko, Olha, Dmytro Hrytsenko, Vitaliy Shvalagin, Galyna Grodziuk i Mikhail Kompanets. "The Use of Carbon Nanoparticles for Inkjet-Printed Functional Labels for Smart Packaging". Journal of Nanomaterials 2018 (2.07.2018): 1–10. http://dx.doi.org/10.1155/2018/6485654.

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Smart packaging functions can be provided by printing functional labels onto packaging materials using inkjet printing and inks with changeable photoluminescence properties. Carbon nanoparticles are considered a perspective fluorescent component of such inks. Ink compositions based on carbon nanoparticles are developed and adapted for inkjet printing on paper packaging materials for producing smart packaging labels. The influence of technological factors of the printing process on the photoluminescence characteristics of the printed images is investigated. The main investigated factors are the concentration of carbon nanoparticles, the relative area of raster elements of a raster field of a tone image, the absorbance and surface smoothness of paper. The resulting parameters are photoluminescence intensity and color. It is found that in case of changes in surface smoothness and absorbance of paper and concentrations of carbon nanoparticles in the ink compositions, the photoluminescence intensity of a printed image changes while its photoluminescence color remains the same. To obtain the highest contrast of tone inkjet-printed images with carbon nanoparticles on papers with any absorbance, the highest concentration of carbon nanoparticles in the ink composition should be used. However, the highest contrast and the highest own photoluminescence intensity of a tone inkjet-printed image with inks with carbon nanoparticles can be achieved only on papers with the lowest absorbance. The most noticeable difference between photoluminescence intensity of printed images on papers with any absorbance can be obtained with the lower concentration of carbon nanoparticles in the ink composition (10 mg/mL). The optimum concentrations of carbon nanoparticles in the composition are determined: for papers with low absorbance—10 mg/mL, and for papers with medium and high absorbance—25 mg/mL. Analytical dependency is created for photoluminescence intensity of images printed with inkjet printing inks with carbon nanoparticles as a function of the studied technological factors. Some design solutions for photoluminescent labels are suggested.
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Rozprawy doktorskie na temat "Photoluminescence"

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Chiu, Sheng-Kuei. "Photoluminescent Silicon Nanoparticles: Fluorescent Cellular Imaging Applications and Photoluminescence (PL) Behavior Study". PDXScholar, 2015. http://pdxscholar.library.pdx.edu/open_access_etds/2455.

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Molecular fluorophores and semiconductor quantum dots (QDs) have been used as cellular imaging agents for biomedical research, but each class has challenges associated with their use, including poor photostability or toxicity. Silicon is a semiconductor material that is inexpensive and relatively environmental benign in comparison to heavy metal-containing quantum dots. Thus, red-emitting silicon nanoparticles (Si NPs) are desirable to prepare for cellular imaging application to be used in place of more toxic QDs. However, Si NPs currently suffer poorly understood photoinstability, and furthermore, the origin of the PL remains under debate. This dissertation first describes the use of diatomaceous earth as a new precursor for the synthesis of photoluminescent Si NPs. Second, the stabilization of red PL from Si NPs in aqueous solution via micellar encapsulation is reported. Thirdly, red to blue PL conversion of decane-terminated Si NPs in alcohol dispersions is described and the origins (i.e., color centers) of the emission events were studied with a comprehensive characterization suite including FT-IR, UV-vis, photoluminescence excitation, and time-resolved photoluminescence spectroscopies in order to determine size or chemical changes underlying the PL color change. In this study, the red and blue PL was determined to result from intrinsic and surface states, respectively. Lastly, we determined that the blue emission band assigned to a surface state can be introduced by base addition in originally red-emitting silicon nanoparticles, and that red PL can be restored by subsequent acid addition. This experimentally demonstrates blue PL is surface state related and can overcome the intrinsic state related excitonic recombination pathway in red PL event. Based on all the data collected and analyzed, we present a simple energy level diagram detailing the multiple origins of Si NP PL, which are related to both size and surface chemistry.
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Vijh, Uma Parvathy. "Photoluminescence by Interstellar Dust". See Full Text at OhioLINK ETD Center (Requires Adobe Acrobat Reader for viewing), 2005. http://www.ohiolink.edu/etd/view.cgi?toledo1122478565.

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Thesis (Ph.D.)--University of Toledo, 2005.
Typescript. "A dissertation [submitted] as partial fulfillment of the requirements of the Doctor of Philosophy degree in Physics." Bibliography; leaves 209-225.
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Al-Ajili, Adwan Nayef Hameed. "Photoluminescence of nanostructured silicon". Thesis, Loughborough University, 1996. https://dspace.lboro.ac.uk/2134/26999.

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The photoluminescence (PL) emitted by porous silicon has been investigated under different conditions of excitation using a pulsed nitrogen laser source, and the continuous tunable DV synchrotron source at Daresbury Laboratory. The project involved sample preparation, and PL measurements using a custom-built optical laser-based system for lifetime measurements. This in itself necessitated software and hardware development to enable interfacing and data-logging using an IBM-compatible PC. The equipment development formed a major part of the project.
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Xiao, Bin, i 肖斌. "Photoluminescence study of ZnO materials". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2011. http://hub.hku.hk/bib/B47153593.

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 Zinc oxide (ZnO) is a wide band gap (3.4eV at 300K) II-VI semiconductor with an exciton binding energy up to 60meV and is promising in the realization of excitonic or polaritonic lasing effect. Photoluminescence is widely used in studying the band gap and defect levels of ZnO. However, understanding in defects of ZnO is still far from satisfaction and remains controversial. Different authors suggest different explanations and mechanisms.  In the present study we investigate in the photoluminescence spectra of four kinds of ZnO single crystal, namely as-grown (not implanted) Zn-face polished, Zn-implanted, O-implanted and He-implanted. The samples are annealed both in air and argon gas at a temperature of 350, 650, 750, 900 and 1200oC. The results show that O-implanted sample is weaker in excitonic emission and has an annealing effect tendency not consistent with that of Zn-implanted and He-implanted. Ion implantation would introduce defects in favor of yellow luminescence and the defects would anneal out gradually as the annealing temperature is rising.
published_or_final_version
Physics
Master
Master of Philosophy
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Alrrshedan, Marrwa. "Photoluminescence from Bulk GaN Substrates". VCU Scholars Compass, 2012. http://scholarscompass.vcu.edu/etd/2802.

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Photoluminescence (PL) has been studied from different types of bulk GaN samples grown by hydride vapor phase epitaxy technique at Kyma Technologies. Point defects in bulk and at the surface affect the electrical and optical properties of GaN and could be analyzed by PL. The surface of the samples was polished with different techniques: one is chemical mechanical polish (CMP) and another is mechanical polish (MP). PL data from MP and CMP surfaces show that PL intensity from the CMP-treated surface is much higher than that from the MP-treated surface. This can be explained by defects formed during the process of MP polish. However, after the MP-treated surface is etched with RIE method, the optical quality of the MP-treated surface improves. In particular, as the depth of etching increases from 50 nm to 700 nm, the PL intensity increases by a factor of 1000. PL from the CMP surfaces of undoped bulk GaN samples contains a broad red luminescence (RL) band and a broad green luminescence (GL) band. However, PL from the CMP surfaces of Fe-doped GaN samples contained a blue luminescence band (labeled as BL2 in literature) and the yellow luminescence (YL) band. PL from MP-treated surfaces (both undoped and Fe-doped) was very weak and it contained relatively narrow red and green bands. These bands, labeled RL2 and GL2, respectively, are quenched at relatively low temperatures, in contrast to the RL and GL bands which are almost independent of temperature in the range from 15 to 300 K.
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Zheng, Wan Hua. "Photoluminescence study of porous silicon". HKBU Institutional Repository, 1998. http://repository.hkbu.edu.hk/etd_ra/138.

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Ngan, Mei Lun. "Photoluminescence excitation of porous silicon". HKBU Institutional Repository, 1998. http://repository.hkbu.edu.hk/etd_ra/139.

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Faklaris, Orestis. "Photoluminescent diamond nanoparticles as labels in cells : study of their optical properties and investigation of their cellular uptake mechanism". Cachan, Ecole normale supérieure, 2009. http://tel.archives-ouvertes.fr/tel-00439561/fr/.

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Ce travail de thèse porte sur l'utilisation des NanoDiamants Photoluminescents (NDPs) pour des applications en bio-imagerie. Les nanodiamants (NDs) sont photoluminescents grâce à la présence de centres colorés azote-lacune (NV) dans leur maille cristalline. Le manuscrit est divisé en deux parties. La première concerne l'étude des propriétés optiques des centres colorés NV dans des NDs. Après l'optimisation de la concentration des centres NV, nous comparons la photoluminescence des NDPs à celle des nanoparticules semi-conductrices commerciales; nous concluons qu'elle peut être équivalente, même supérieure dans le cas des NDPs. Pour augmenter le contraste d'imagerie intracellulaire des NDPs, nous avons étudié l'excitation à 2-photons des centres NV. Lors de cette étude avec un laser impulsionnel, nous avons découvert que le signal de photoluminescence des NDPs excité à un photon chute très fortement lorsque l'impulsion infrarouge est simultanée de l'excitation visible. Nous avons étudié la façon d'utiliser cet effet pour l'imagerie de super-resolution. La deuxième partie porte sur l'étude des applications des NDPs comme sondes pour la bio-imagerie. Dans le but d'utiliser des NDPs comme véhicules de biomolécules, nous avons étudié leurs mécanismes d'internalisation et avons élucidé leur localisation intracellulaire, en inhibant des voies différentes d'internalisation et par des expériences d'immunofluorescence. De plus, nous avons montré que les NDPs ne sont pas toxiques pour des cellules en culture. Un premier essai de vectorisation a été mené avec de NDPs couverts d'ADN plasmidique
This thesis work studies the use of Photoluminescent NanoDiamonds (PNDs) for bio-imaging applications. Nanodiamonds are photoluminescent thanks to embedded nitrogen-vacancy (NV) color centers. The thesis is divided in two parts. The first part concerns the study of the optical properties of NV color centers in nanodiamonds. After optimization of the NV center concentration, we compared the photoluminescence of PNDs to commercial Quantum Dots (QDs) and conclude that it can be similar or even higher in the case of PNDs. To enhance the imaging contrast of internalized by cells PNDs, we studied the 2-photon excitation properties of NV centers. While implementing a pulsed excitation laser, we discovered that simultaneous one- and two-photon excitation (IR+VIS pulses) quenches the photoluminescence signal of PNDs. We examined how this effect can serve for super-resolution imaging of NV color centers in nanodiamonds. The second part of the work is devoted to the applications of PNDs as bio-imaging probes. In the prospect of applications of PNDs as drug delivery vehicles, we studied the uptake mechanisms of PNDs and elucidated their intracellular localization by blocking different entry mechanisms and by immunofluorescence experiments. Moreover, we ensured that PNDs are not toxic for cells in culture. As a first try of vectorization we covered PNDs with plasmid DNA and examined the transfection efficiency
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Wilde, Fabian. "Unidirectional photoluminescence emission of pierced microdisks /". München : Dr. Hut Verlag, 2009. http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&doc_number=017120456&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA.

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Seyhan, Ayse. "Photoluminescence Specroscopy Of Cds And Gase". Master's thesis, METU, 2003. http://etd.lib.metu.edu.tr/upload/1258383/index.pdf.

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With the use of photoluminescence (PL) spectroscopy one can able to get a great deal of information about electronic structure and optical processes in semiconductors by the aid of optical characterization. Among various compound semiconductors, Cadmium Sulfide (CdS) and Gallium Selenide (GaSe) are interesting materials for their PL emissions. Particularly, due to its strong anisotropy, investigation of GaSe necessitates new experimental approaches to the PL technique. We have designed, fabricated and used new experimental set-up for this purpose. In this thesis, we have investigated the PL spectra of both CdS and GaSe as a function of temperature. We observed interesting features in these samples. These features were analyzed experimentally and described by taking the band structure of the crystals into account. From the excitonic emissions, we determined the bandgap energy of both materials. We studied various peaks that appear in the PL spectra and their origin in the material. We have found that donor acceptor transitions are effective in CdS at low temperatures. A transition giving rise to a red emission was observed and attributed to a donor level which is likely to result form an S vacancy in CdS crystal. The PL peaks with energy close to the bandgap were observed in GaSe. These peak were attributed to the bound excitons connected either to the direct or indirect band edge of GaSe. The striking experimental finding in this work was the PL spectra of GaSe measured in different angular position with respect to the crystal axis. We observed that PL spectra exhibit substantial differences when the angular position of the laser beam and the detector is changed. The optical anisotropy which is responsible for these differences was measured experimentally and discussed by considering the selection rules of the band states of GaSe.
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Książki na temat "Photoluminescence"

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Teets, Thomas S. Photoluminescence. Washington, DC, USA: American Chemical Society, 2022. http://dx.doi.org/10.1021/acsinfocus.7e5014.

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1951-, Wright Harry K., i Edwards Grace V, red. Photoluminescence research progress. Hauppauge, N.Y: Nova Science Publishers, 2008.

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Case, Merle A. Photoluminescence: Applications, types and efficacy. Hauppauge, N.Y: Nova Science Publishers, 2011.

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Mikhalʹchenko, G. A. Radioli͡u︡minest͡s︡entnye izluchateli. Moskva: Ėnergoatomizdat, 1988.

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1932-, Weber Marvin J., red. Selected papers on photoluminescence of inorganic solids. Bellingham, Wash: SPIE Optical Engineering Press, 1998.

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Peka, G. P. Li͡u︡minest͡s︡entnye metody kontroli͡a︡ parametrov poluprovodnikovykh materialov i priborov. Kiev: "Tekhnika", 1986.

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Challa S.S.R. Kumar. UV-VIS and Photoluminescence Spectroscopy for Nanomaterials Characterization. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013.

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Kumar, Challa, red. UV-VIS and Photoluminescence Spectroscopy for Nanomaterials Characterization. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-27594-4.

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Nikolaus, Dietz, i United States. National Aeronautics and Space Administration., red. Defect characterization in ZnGeP₂ by time-resolved photoluminescence. [Washington, D.C: National Aeronautics and Space Administration, 1995.

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International, Conference on Luminescent Materials (6th 1998 Paris France). Proceedings of the Sixth International Conference on Luminescent Materials. Pennington, NJ: Electrochemical Society, 1998.

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Części książek na temat "Photoluminescence"

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Shionoya, Shigeo. "Photoluminescence". W Luminescence of Solids, 95–133. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5361-8_3.

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Lu, Wei, i Ying Fu. "Photoluminescence". W Springer Series in Optical Sciences, 107–58. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-94953-6_4.

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Miyauchi, Yuhei. "Photoluminescence". W Compendium of Surface and Interface Analysis, 471–76. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-6156-1_77.

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Aoki, T. "Photoluminescence". W Optical Properties of Condensed Matter and Applications, 75–106. Chichester, UK: John Wiley & Sons, Ltd, 2006. http://dx.doi.org/10.1002/0470021942.ch5.

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Matsuoka, Masaya, Masakazu Saito i Masakazu Anpo. "Photoluminescence Spectroscopy". W Characterization of Solid Materials and Heterogeneous Catalysts, 149–84. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2012. http://dx.doi.org/10.1002/9783527645329.ch4.

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Sobiesierski, Zbig. "Photoluminescence Spectroscopy". W Epioptics, 133–62. Berlin, Heidelberg: Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-642-79820-7_6.

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Kalt, Heinz. "Nano-Photoluminescence". W CFN Lectures on Functional Nanostructures Vol. 1, 51–70. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-540-31533-9_3.

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Fernandes da Silva, E. C. "GaAsxSb1–x: photoluminescence". W New Data and Updates for III-V, II-VI and I-VII Compounds, 197–98. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-92140-0_147.

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Jimenez, Juan, i Jens W. Tomm. "Photoluminescence (PL) Techniques". W Spectroscopic Analysis of Optoelectronic Semiconductors, 143–211. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-42349-4_4.

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Yoshikawa, Masanobu. "Photoluminescence (PL) Spectroscopy". W Advanced Optical Spectroscopy Techniques for Semiconductors, 27–32. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-19722-2_3.

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Streszczenia konferencji na temat "Photoluminescence"

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Riemer, E. K., T. G. Stoebe i A. A. Khan. "Scanning Photoluminescence". W Semiconductor Conferences, redaktorzy Orest J. Glembocki, Fred H. Pollak i Jin-Joo Song. SPIE, 1987. http://dx.doi.org/10.1117/12.940886.

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Singh, Vartika S., P. D. Belsare i S. V. Moharil. "Photoluminescence in KMgAlF6". W INTERNATIONAL CONFERENCE ON MULTIFUNCTIONAL MATERIALS (ICMM-2019). AIP Publishing, 2020. http://dx.doi.org/10.1063/5.0019635.

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Kaminski, Raymond. "Mapping GaAs Photoluminescence". W OE LASE'87 and EO Imaging Symp (January 1987, Los Angeles), redaktor E. R. Menzel. SPIE, 1987. http://dx.doi.org/10.1117/12.966929.

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DeLong, M. C., R. A. Hogg, D. J. Mowbray, M. Hopkinson, M. S. Skolnick, P. C. Taylor, J. M. Olson, Sarah R. Kurtz i A. E. Kibbler. "Photoluminescence and photoluminescence excitation spectroscopy in ordered and disordered Ga0.52In0.48P". W Photovoltaic advanced research and development project. AIP, 1992. http://dx.doi.org/10.1063/1.42885.

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Magill, Brenden A., Giti Khodaparast, Kai Wang, Tao Ye, Carlos G. Garcia, Stephen A. McGill i Shashank Priya. "Photoluminescence and Time Resolved Photoluminescence of Organic-inorganic Halide Perovskites". W Low-Dimensional Materials and Devices 2021, redaktorzy Nobuhiko P. Kobayashi, A. Alec Talin, Albert V. Davydov i M. Saif Islam. SPIE, 2021. http://dx.doi.org/10.1117/12.2595623.

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Perez, Phoebe Nicole, Wen-Ching Chao, Li-Wei Tu, Ching-Hwa Ho, Meng-En Lee, Emmanuel A. Florido i Der-Jun Jang. "Photoluminescence and time-resolved photoluminescence study of GaSe1-xSx mixed crystal". W Physics and Simulation of Optoelectronic Devices XXVIII, redaktorzy Marek Osiński, Yasuhiko Arakawa i Bernd Witzigmann. SPIE, 2020. http://dx.doi.org/10.1117/12.2550683.

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TSETSERI, M., G. P. TRIBERIS, V. VOLIOTIS i R. GROUSSON. "STUDY OF PHOTOLUMINESCENCE AND MICRO-PHOTOLUMINESCENCE OF V-SHAPED QUANTUM WIRES". W Papers Presented at MMN 2000. WORLD SCIENTIFIC, 2001. http://dx.doi.org/10.1142/9789812810861_0004.

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Roth, Diane J., Pavel Ginzburg, Mazhar E. Nasir, Alexey V. Krasavin, Klaus Suhling, David Richards, Viktor A. Podolskiy i Anatoly V. Zayats. "Metamaterial-enhanced photoluminescence spectroscopy". W Enhanced Spectroscopies and Nanoimaging 2020, redaktorzy Prabhat Verma i Yung Doug Suh. SPIE, 2020. http://dx.doi.org/10.1117/12.2567612.

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Rowell, Nelson L. "Fourier Transform Infrared Photoluminescence". W 31st Annual Technical Symposium, redaktorzy Fran Adar i James E. Griffiths. SPIE, 1988. http://dx.doi.org/10.1117/12.941950.

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Bordun, O., i O. Drobchak. "Photoluminescence of urine salts". W Biomedical Optics (BiOS) 2008, redaktorzy Gerard L. Coté i Alexander V. Priezzhev. SPIE, 2008. http://dx.doi.org/10.1117/12.760375.

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Raporty organizacyjne na temat "Photoluminescence"

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Chiu, Sheng-Kuei. Photoluminescent Silicon Nanoparticles: Fluorescent Cellular Imaging Applications and Photoluminescence (PL) Behavior Study. Portland State University Library, styczeń 2000. http://dx.doi.org/10.15760/etd.2453.

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Bloom, Rose. Photoluminescence in Tagging: A Glowing Review. Office of Scientific and Technical Information (OSTI), listopad 2021. http://dx.doi.org/10.2172/1833235.

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JONES, ERIC D., ANDREW A. ALLERMAN, STEVEN R. KURTZ i NORMAND A. MODINE. Photoluminescence-Linewidth-Derived Exciton Masses for InGaAsN Alloys. Office of Scientific and Technical Information (OSTI), lipiec 2001. http://dx.doi.org/10.2172/783096.

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Blatchford, J. W., S. W. Jessen, L. B. Lin, T. L. Gustafson i A. J. Epstein. Photoluminescence in Pyridine-Based Polymers: Role of Aggregates. Fort Belvoir, VA: Defense Technical Information Center, wrzesień 1997. http://dx.doi.org/10.21236/ada330183.

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Ryutov, D. Some Physics Processes in the Nitrogen-Filled Photoluminescence Cell. Office of Scientific and Technical Information (OSTI), czerwiec 2006. http://dx.doi.org/10.2172/896567.

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Mair, R. A. A polarized photoluminescence study of strained layer GaAs photocathodes. Office of Scientific and Technical Information (OSTI), lipiec 1996. http://dx.doi.org/10.2172/486023.

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Mair, R. A Polarized Photoluminescence Study of Strained Layer GaAs Photocathodes. Office of Scientific and Technical Information (OSTI), czerwiec 2018. http://dx.doi.org/10.2172/1454161.

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Bowman, Jr, Cooper R. C.. i D. E. Electron Paramagnetic Resonance and Photoluminescence Studies of Impurities in CdTe. Fort Belvoir, VA: Defense Technical Information Center, październik 1988. http://dx.doi.org/10.21236/ada202841.

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Roberts, Adam T., i Henry O. Everitt. Low Temperature Photoluminescence (PL) from High Electron Mobility Transistors (HEMTs). Fort Belvoir, VA: Defense Technical Information Center, marzec 2015. http://dx.doi.org/10.21236/ada614121.

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Ryutov, D. Some Physics Processes in the Nitrogen-Filled Photoluminescence Cell - Rev. 1. Office of Scientific and Technical Information (OSTI), czerwiec 2006. http://dx.doi.org/10.2172/896573.

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