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Gotowe bibliografie tematyczne / Photoconductivity - Nanostructures

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Gotowa bibliografia na temat „Photoconductivity - Nanostructures”

Autor: Grafiati

Data publikacji: 7 września 2023

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Artykuły w czasopismach na temat "Photoconductivity - Nanostructures"

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Ruda, H., i A. Shik. "Ballistic photoconductivity in nanostructures". Applied Physics Letters 78, nr 18 (30.04.2001): 2778–80. http://dx.doi.org/10.1063/1.1368372.

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Chen, Cheng-Ying, Ming-Wei Chen, Jr-Jian Ke, Chin-An Lin, José R. D. Retamal i Jr-Hau He. "Surface effects on optical and electrical properties of ZnO nanostructures". Pure and Applied Chemistry 82, nr 11 (6.08.2010): 2055–73. http://dx.doi.org/10.1351/pac-con-09-12-05.

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This article presents a comprehensive review of the current research addressing the surface effects on physical properties and potential applications of nanostructured ZnO. Studies illustrating the transport, photoluminescence (PL), and photoconductivity properties of ZnO with ultrahigh surface-to-volume (S/V) ratio are reviewed first. Secondly, we examine recent studies of the applications of nanostructured ZnO employing the surface effect on gas/chemical sensing, relying on a change of conductivity via electron trapping and detrapping process at the surfaces of nanostructures. Finally, we comprehensively review the photovoltaic (PV) application of ZnO nanostructures. The ultrahigh S/V ratios of nanostructured devices suggest that studies on the synthesis and PV properties of various nanostructured ZnO for dye-sensitized solar cells (DSSCs) offer great potential for high efficiency and low-cost solar cell solutions. After surveying the current literature on the surface effects on nano-structured ZnO, we conclude this review with personal perspectives on a few surface-related issues that remain to be addressed before nanostructured ZnO devices can reach their ultimate potential as a new class of industrial applications.

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Mishra, Sheo K., U. K. Tripathi, Saurabh Dixit, K. C. Dubey i R. K. Shukla. "ZnO Nano-microstructures and their Photo Conducting Properties Synthesized by Sol-Gel Method". SAMRIDDHI : A Journal of Physical Sciences, Engineering and Technology 10, nr 02 (25.12.2018): 95–98. http://dx.doi.org/10.18090/samriddhi.v10i02.3.

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In the present paper, photoconductivity (PC) of Zinc-oxide (ZnO) nanostructures synthesized by sol-gel method has been investigated. Structural study has been performed by X-ray diffraction (XRD) patterns. The XRD result confirms the formation of hexagonal phase. In the photoconductivity analysis, growth and decay of photocurrent of ZnO nanostructures have been investigated. The photo-response of prepared sample has been measured underUV illumination using thick film of powder without any binder. The growth and decay of photocurrent show fastrise and decay of photocurrent indicating suitability for UV photodetectors applications

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Susha, N., K. Nandakumar i Swapna S. Nair. "Enhanced photoconductivity in CdS/betanin composite nanostructures". RSC Advances 8, nr 21 (2018): 11330–37. http://dx.doi.org/10.1039/c7ra13116j.

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The synthesis is described of inorganic/organic hybrid nanostructured composites based on CdS/betanin with enhanced photoconductivity due to the transfer of photogenerated electrons from the conduction band of betanin to the conduction band of CdS.

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Bayan, Sayan, Sheo K. Mishra, Purushottam Chakraborty, Dambarudhar Mohanta, Ravi Shankar i Rajneesh K. Srivastava. "Enhanced vacuum-photoconductivity of chemically synthesized ZnO nanostructures". Philosophical Magazine 94, nr 9 (27.01.2014): 914–24. http://dx.doi.org/10.1080/14786435.2013.869367.

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Gubin M.Yu., Dzedolik I. V., Prokhorova T. V., Pereskokov V. S. i Leksin A. Yu. "Switching effects in plasmon circuits based on thin metal films and nanostructures with increased photoconductivity". Optics and Spectroscopy 132, nr 3 (2022): 406. http://dx.doi.org/10.21883/eos.2022.03.53564.2700-21.

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The features of optical control of surface plasmon-polariton propagation in plasmon circuits based on thin metal waveguides and semiconductor nanostructures are considered. A model of a plasmon resonator with additional elements based on semiconducting materials exhibiting strong photoconductivity is proposed. By means of numerical simulation, the possibility of switching the surface plasmon-polariton flux in the plasmon circuit by switching on/off the external optical pumping field, which changes the contribution of light-induced conduction of control elements, is shown. Keywords: surface plasmon-polaritons, metal plasmon waveguide, photoconductivity, plasmon resonator.

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Huang, Y. H., R. S. Chen, J. R. Zhang i Y. S. Huang. "Electronic transport in NbSe2two-dimensional nanostructures: semiconducting characteristics and photoconductivity". Nanoscale 7, nr 45 (2015): 18964–70. http://dx.doi.org/10.1039/c5nr05430c.

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Yin, Z. G., X. W. Zhang, Z. Fu, X. L. Yang, J. L. Wu, G. S. Wu, L. Gong i Paul K. Chu. "Persistent photoconductivity in ZnO nanostructures induced by surface oxygen vacancy". physica status solidi (RRL) - Rapid Research Letters 6, nr 3 (19.01.2012): 117–19. http://dx.doi.org/10.1002/pssr.201105551.

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Chitara, Basant, Amit K. Shringi, Biswadev Roy, Marvin H. Wu i Fei Yan. "Facile synthesis and morphology-induced photoconductivity modulation of Bi2O2S nanostructures". Materials Letters 346 (wrzesień 2023): 134545. http://dx.doi.org/10.1016/j.matlet.2023.134545.

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Sprincean, Veaceslav, Liviu Leontie, Iuliana Caraman, Oleg Lupan, Rainer Adeling, Silviu Gurlui, Aurelian Carlescu, Corneliu Doroftei i Mihail Caraman. "Preparation, Chemical Composition, and Optical Properties of (β–Ga2O3 Composite Thin Films)/(GaSxSe1−x Lamellar Solid Solutions) Nanostructures". Nanomaterials 13, nr 14 (11.07.2023): 2052. http://dx.doi.org/10.3390/nano13142052.

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GaSxSe1−x solid solutions are layered semiconductors with a band gap between 2.0 and 2.6 eV. Their single crystals are formed by planar packings of S/Se-Ga-Ga-S/Se type, with weak polarization bonds between them, which allows obtaining, by splitting, plan-parallel lamellae with atomically smooth surfaces. By heat treatment in a normal or water vapor-enriched atmosphere, their plates are covered with a layer consisting of β–Ga2O3 nanowires/nanoribbons. In this work, the elemental and chemical composition, surface morphology, as well as optical, photoluminescent, and photoelectric properties of β–Ga2O3 layer formed on GaSxSe1−x (0 ≤ x ≤ 1) solid solutions (as substrate) are studied. The correlation is made between the composition (x) of the primary material, technological preparation conditions of the oxide-semiconducting layer, and the optical, photoelectric, and photoluminescent properties of β–Ga2O3 (nanosized layers)/GaSxSe1−x structures. From the analysis of the fundamental absorption edge, photoluminescence, and photoconductivity, the character of the optical transitions and the optical band gap in the range of 4.5–4.8 eV were determined, as well as the mechanisms behind blue-green photoluminescence and photoconductivity in the fundamental absorption band region. The photoluminescence bands in the blue-green region are characteristic of β–Ga2O3 nanowires/nanolamellae structures. The photoconductivity of β–Ga2O3 structures on GaSxSe1−x solid solution substrate is determined by their strong fundamental absorption. As synthesized structures hold promise for potential applications in UV receivers, UV-C sources, gas sensors, as well as photocatalytic decomposition of water and organic pollutants.

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Rozprawy doktorskie na temat "Photoconductivity - Nanostructures"

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Green, Travis Christopher. "Photo-induced charge carrier dynamics and self-organization in semiconductor and metallic nanocrystals : in between the bulk and individual molecules". Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/30480.

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Rezgui, Béchir. "Etude des propriétés optiques, électriques et structurales de nanoparticules de silicium insérées dans une matrice diélectrique et étude de leur intégration pour des cellules photovoltaïques à haut rendement". Lyon, INSA, 2010. http://theses.insa-lyon.fr/publication/2010ISAL0090/these.pdf.

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Outre les applications photoniques et nanoélectroniques, les structures formées de nanoparticules de silicium insérées dans une matrice diélectrique pourraient jouer un rôle important dans le développement de concepts innovants de cellules photovoltaïques dits de 3ème génération, permettant d’atteindre des rendements de conversion largement supérieurs à celui des cellules actuelles (31 %). Néanmoins, les propriétés optoélectroniques de ces nanostructures doivent être maîtrisées de manière à obtenir un matériau de bonne qualité pour les applications photovoltaïques. Le présent travail s’inscrit dans le cadre de l’étude des propriétés optiques, électriques et structurales de nanoparticules de silicium (Np-Si) immergées dans une matrice d’oxyde ou de nitrure de silicium sous forme de couches minces obtenues par différentes techniques de dépôt. Dans un premier temps, les conditions de formation de ces nanostructures dans des couches de nitrure enrichies en silicium déposées par PECVD sont étudiées afin de trouver les conditions de dépôt optimales permettant d’avoir une forte densité de nanoparticules ainsi qu’une taille contrôlée. L’étude de l’influence d’un traitement thermique sur les caractéristiques des Np-Si sera présentée. Afin de contrôler la taille de Np-Si, des structures en multicouches élaborées en utilisant différents procédures de dépôt sont analysées. Les résultats de photoluminescence obtenus sur les multicouches SiO2/SiOx/SiO2 déposées par pulvérisation magnétron permettent de valider les performances de telles structures. Des structures similaires préparées par PECVD en alternant une couche de nitrure stoechiométrique et une couche de nitrure riche en silicium sont aussi étudiées. L’accent est mis particulièrement sur l’analyse des propriétés d’absorption et de transport de charges dans ces nanostructures afin de tester leur efficacité "photovoltaïque" et évaluer la possibilité de réaliser des cellules multijonctions à base de ces nanomatériaux. La dépendance du coefficient d’absorption et du courant photogénéré en fonction de la taille et la densité des Np-Si est ainsi présentée. Une partie de ce travail est dédiée à l’étude de l’effet de dopage sur les propriétés optiques des couches nanocomposites
Silicon nanoparticles (Si-Np) embedded in dielectric matrix have received attention as promising materials for optoelectronic applications. More specifically, bandgap engineering of new materials based on Si-Np has been proposed for possible application in an "all-silicon" tandem solar cell within the field of "third generation" photovoltaics. Such an application would require nanoparticles to exhibit quantum confinement whereby the optical and electrical properties of a film could be tuned by controlling the size of these nanostructures. This thesis investigates the structural, optical and electrical properties of Si-Np grown in-situ or via solid phase crystallisation in different host matrices. A study of the relevant plasma enhanced chemical vapor deposition (PECVD) parameters for the formation of Si-Np in amorphous silicon nitride was carried out and the optimization of each deposition parameters, for obtaining best material quality, is presented. Structural techniques, including Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, transmission electron microscopy and X-ray reflectivity were employed to gather structural information about the Si-Np-SiNx structures. A case study on the effect of annealing temperature on the size and density of Si-Np is demonstrated. Size dependent photoluminescence and absorption is presented for SiO2/SiOx/SiO2 multilayer structures embedded with Si-Np. A similar multilayers based on silicon nitride material, grown by PECVD, are also investigated. Photogenerated current of these structures, extracted from the photocurrent measurements is investigated in the present work in order to expand the understanding of engineering electrical injection in laterally active paths. In addition, the effect of boron doping of gas-phase silicon nanoparticles on the light emission and structural properties is studied. These observations may be important for future photovoltaic applications

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Golub, A. S., N. D. Lenenko, E. P. Krinichnaya, O. P. Ivanova, I. V. Klimenko i T. S. Zhuravleva. "Nanostructured Films of Semiconducting Molybdenum Disulfide Obtained Through Exfoliation-Restacking Method". Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35055.

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Preparing MoS2 films in mild conditions, using deposition of suspended MoS2 nanoplatelets onto the substrate is described. For this purpose, the nanosized MoS2 particles were obtained via restacking of MoS2 single layers produced by chemical exfoliation of bulk MoS2 crystals in liquid media. X-Ray diffraction study of the films showed that the basal planes of MoS2 crystallites are mainly oriented in the plane paral-lel to the substrate. Atomic force microscopy examination revealed the dependence of the film surface to-pography, as well as the roughness characteristics on the film thickness, which varied in the range of 0.03-2.2 m. Optical absorption spectra of the obtained MoS2 films were found to contain the same absorption bands as the spectra of thin natural MoS2 single crystals. Dark conductivity of the films was determined to be ~ 10–3 S∙сm–1 at 300 K. The present MoS2 films were found to be photosensitive in the range of 300-800 nm, providing the maximum value of photocurrent under photoexcitation at ~ 440 nm. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35055

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Yang, Hung-Wei, i 楊紘瑋. "The study of InSe nanostructure photoconductivity characterization". Thesis, 2017. http://ndltd.ncl.edu.tw/handle/28x84z.

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碩士
國立臺灣科技大學
應用科技研究所
105
Photoconduction and electronic transport properties in the direct-bandgap layer semiconductor of hexagonal indium selenide(InSe)grown by chemical vapor transport (CVT)have been investigated. The InSe layer nanostructure devices were fabricated using focused-ion beam (FIB) deposition and platinum (Pt) as the contact metal. By using different excitation wavelength, the InSe nanosheets show a higher photoresponse to the ultraviolet light illumination.The photocurrent increases nonlinearly with an increase at light intensity.Notably, under the same wavelength excitation , the InSe nanosheet photodetectors show the optimal responsivity and detectivity compared to most of the layer semiconductor nanostructures. The normalized gain, which defines the inherent photocurrent collection efficiency , of the In Senanosheets is over two orders of magnitude higher than those of the otherlayer materials. The environment-dependent photoconductivity measurement indicates that the InSe nanomaterials follow the oxygen-sensitive photoconduction mechanism. The physical origins resulting in the superior photoconductivity and detector performance in the InSe nanosheets were also discussed.

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Książki na temat "Photoconductivity - Nanostructures"

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Song, Jin-Joo. Ultrafast phenomena in semiconductors and nanostructure materials XIV: 24-27 January 2010, San Francisco, California, United States. Redaktor SPIE (Society). Bellingham, Wash: SPIE, 2010.

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Thon, Tsen Kong, i Society of Photo-optical Instrumentation Engineers., red. Ultrafast phenomena in semiconductors and nanostructure materials XI and Semiconductor photodetectors IV: 22-24 January, 2007, San Jose, California, USA. Bellingham, Wash: SPIE, 2007.

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Streszczenia konferencji na temat "Photoconductivity - Nanostructures"

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Jensen, Soren A., Ronald Ulbricht, Akimitsu Narita, Xinliang Feng, Klaus Mullen, Dmitry Turchinovich, Tobias Hertel i Mischa Bonn. "Terahertz photoconductivity of graphene nanostructures". W 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2013). IEEE, 2013. http://dx.doi.org/10.1109/irmmw-thz.2013.6665852.

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ALESHKIN, V. Ya, A. V. BIRYUKOV, S. V. GAPONOV, Z. F. KRASIL'NIK i V. L. MIRONOV. "SCANNING TUNNELING MICROSCOPE INVESTIGATION OF LOCAL PHOTOCONDUCTIVITY IN SEMICONDUCTOR NANOSTRUCTURES". W Reviews and Short Notes to Nanomeeting '99. WORLD SCIENTIFIC, 1999. http://dx.doi.org/10.1142/9789812817990_0026.

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Fujiwara, A. "Temperature Dependence of Photoconductivity of Single-Wall Carbon Nanotubes". W MOLECULAR NANOSTRUCTURES: XVII International Winterschool Euroconference on Electronic Properties of Novel Materials. AIP, 2003. http://dx.doi.org/10.1063/1.1628008.

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Teichert, Christian. "Advanced AFM Techniques to Study Photoconductivity of Inorganic and Organic Semiconductor Nanostructures". W nanoGe Fall Meeting 2018. València: Fundació Scito, 2018. http://dx.doi.org/10.29363/nanoge.fallmeeting.2018.155.

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Teichert, Christian. "Advanced AFM Techniques to Study Photoconductivity of Inorganic and Organic Semiconductor Nanostructures". W nanoGe Fall Meeting 2018. València: Fundació Scito, 2018. http://dx.doi.org/10.29363/nanoge.nfm.2018.155.

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Fujiwara, A. "Photoconductivity and Local Transport Properties of Single-Wall Carbon Nanotubes". W STRUCTURAL AND ELECTRONIC PROPERTIES OF MOLECULAR NANOSTRUCTURES: XVI International Winterschool on Electronic Properties of Novel Materials. AIP, 2002. http://dx.doi.org/10.1063/1.1514115.

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Kan’no, K. "Photoconductivity Associated with Thermal Dissociation of Frenkel Excitons in Pristine C60 Crystals". W ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials. AIP, 2005. http://dx.doi.org/10.1063/1.2103818.

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Kobeleva, Svetlana, Ivan Schemerov, Artem Sharapov i Sergey Yurchuk. "CONSIDERATION OF SURFACE RECOMBINATION WHEN MEASURING THE RECOMBINATION LIFETIME FROM THE PHOTOCONDUCTIVITY DECAY IN LARGE-THICKNESS SAMPLES". W International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1555.silicon-2020/55-58.

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Surface recombination strongly influence on the photoconductivity decay curve. In this work it was shown that usually defined using this curve the effective life time don’t achieve maxima value if silicon sample thickness exceeds six diffusion length. In this case well known formulas for calculation of free carrier recombination lifetime need to be adjusted.

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Conte, L., U. Coscia, D. K. Basa, G. Ambrosone i V. Rigato. "Spectral photoconductivity of nanostructured silicon carbon films spectral photoconductivity of SiC thin films". W 2014 Fotonica AEIT Italian Conference on Photonics Technologies (Fotonica AEIT). IEEE, 2014. http://dx.doi.org/10.1109/fotonica.2014.6843892.

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Garcia-Macedo, Jorge, Alfredo Franco, Guadalupe Valverde i Jeffrey I. Zink. "Photoconductivity on nanostructured sol-gel thin films with silver nanoparticles". W Optical Science and Technology, the SPIE 49th Annual Meeting, redaktorzy Zakya H. Kafafi i Paul A. Lane. SPIE, 2004. http://dx.doi.org/10.1117/12.559688.

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