Artykuły w czasopismach na temat „Phase change memory GST”
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S. A.Aziz, M., F. H. M.Fauzi, Z. Mohamad i R. I. Alip. "The Effect of Channel Length on Phase Transition of Phase Change Memory". International Journal of Engineering & Technology 7, nr 3.11 (21.07.2018): 25. http://dx.doi.org/10.14419/ijet.v7i3.11.15923.
Pełny tekst źródłaGolovchak, R., Y. G. Choi, S. Kozyukhin, Yu Chigirinsky, A. Kovalskiy, P. Xiong-Skiba, J. Trimble, R. Pafchek i H. Jain. "Oxygen incorporation into GST phase-change memory matrix". Applied Surface Science 332 (marzec 2015): 533–41. http://dx.doi.org/10.1016/j.apsusc.2015.01.203.
Pełny tekst źródłaBehrens, Mario, Andriy Lotnyk, Hagen Bryja, Jürgen W. Gerlach i Bernd Rauschenbach. "Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses". Materials 13, nr 9 (1.05.2020): 2082. http://dx.doi.org/10.3390/ma13092082.
Pełny tekst źródłaStern, Keren, Yair Keller, Christopher M. Neumann, Eric Pop i Eilam Yalon. "Temperature-dependent thermal resistance of phase change memory". Applied Physics Letters 120, nr 11 (14.03.2022): 113501. http://dx.doi.org/10.1063/5.0081016.
Pełny tekst źródłaKim, Sung Soon, Jun Hyun Bae, Woo Hyuck Do, Kyun Ho Lee, Young Tae Kim, Young Kwan Park, Jeong Taek Kong i Hong Lim Lee. "Thermal Stress Model for Phase Change Random Access Memory". Solid State Phenomena 124-126 (czerwiec 2007): 37–40. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.37.
Pełny tekst źródłaRaeis-Hosseini, Niloufar, i Junsuk Rho. "Dual-Functional Nanoscale Devices Using Phase-Change Materials: A Reconfigurable Perfect Absorber with Nonvolatile Resistance-Change Memory Characteristics". Applied Sciences 9, nr 3 (8.02.2019): 564. http://dx.doi.org/10.3390/app9030564.
Pełny tekst źródłaAgarwal, Satish C. "Role of potential fluctuations in phase-change GST memory devices". physica status solidi (b) 249, nr 10 (17.08.2012): 1956–61. http://dx.doi.org/10.1002/pssb.201200362.
Pełny tekst źródłaXue, Yuan, Sannian Song, Xiaogang Chen, Shuai Yan, Shilong Lv, Tianjiao Xin i Zhitang Song. "Enhanced performance of phase change memory by grain size reduction". Journal of Materials Chemistry C 10, nr 9 (2022): 3585–92. http://dx.doi.org/10.1039/d1tc06045g.
Pełny tekst źródłaPacco, Antoine, Ju-Geng Lai, Pallavi Puttarame Gowda, Hanne De Coster, Jens Rip, Kurt Wostyn i Efrain Altamirano Sanchez. "Wet Chemical Recess Etching of Ge2Sb2Te5 for 3D PCRAM Memory Applications". ECS Meeting Abstracts MA2022-01, nr 28 (7.07.2022): 1262. http://dx.doi.org/10.1149/ma2022-01281262mtgabs.
Pełny tekst źródłaYin, You, i Sumio Hosaka. "Crystal Growth Suppression by N-Doping into Chalcogenide for Application to Next-Generation Phase Change Memory". Key Engineering Materials 497 (grudzień 2011): 101–5. http://dx.doi.org/10.4028/www.scientific.net/kem.497.101.
Pełny tekst źródłaRen, W., M. Zhong, J. Dai, P. Mukundhan i M. Zhang. "Phase change memory alloys: GST cell array characterization using picosecond ultrasonics". Microelectronic Engineering 88, nr 5 (maj 2011): 822–26. http://dx.doi.org/10.1016/j.mee.2010.07.016.
Pełny tekst źródłaZhu, Yueqin, Zhonghua Zhang, Sannian Song, Huaqing Xie, Zhitang Song, Xiaoyun Li, Lanlan Shen, Le Li, Liangcai Wu i Bo Liu. "Ni-doped GST materials for high speed phase change memory applications". Materials Research Bulletin 64 (kwiecień 2015): 333–36. http://dx.doi.org/10.1016/j.materresbull.2015.01.016.
Pełny tekst źródłaPan, Yuanchun, Zhen Li i Zhonglu Guo. "Lattice Thermal Conductivity of mGeTe•nSb2Te3 Phase-Change Materials: A First-Principles Study". Crystals 9, nr 3 (7.03.2019): 136. http://dx.doi.org/10.3390/cryst9030136.
Pełny tekst źródłaWang, Miao, Yegang Lu, Xiang Shen, Guoxiang Wang, Jun Li, Shixun Dai, Sannian Song i Zhitang Song. "Effect of Sb2Se on phase change characteristics of Ge2Sb2Te5". CrystEngComm 17, nr 26 (2015): 4871–76. http://dx.doi.org/10.1039/c5ce00656b.
Pełny tekst źródłaKim, JunHo, i Ki-Bong Song. "Simulation Study on Heat Conduction of a Nanoscale Phase-Change Random Access Memory Cell". Journal of Nanoscience and Nanotechnology 6, nr 11 (1.11.2006): 3474–78. http://dx.doi.org/10.1166/jnn.2006.17963.
Pełny tekst źródłaLei, Xin-Qing, Jia-He Zhu, Da-Wei Wang i Wen-Sheng Zhao. "Design for Ultrahigh-Density Vertical Phase Change Memory: Proposal and Numerical Investigation". Electronics 11, nr 12 (8.06.2022): 1822. http://dx.doi.org/10.3390/electronics11121822.
Pełny tekst źródłaBartlett, Philip N., Sophie L. Benjamin, C. H. (Kees) de Groot, Andrew L. Hector, Ruomeng Huang, Andrew Jolleys, Gabriela P. Kissling i in. "Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5 phase change memory". Materials Horizons 2, nr 4 (2015): 420–26. http://dx.doi.org/10.1039/c5mh00030k.
Pełny tekst źródłaLIAO, YUANBAO, JIAJIA WU, LING XU, FEI YANG, WENQING LIU, JUN XU, LIANGCAI WU, ZHONGYUAN MA i KUNJI CHEN. "FORMATION, STRUCTURE AND PROPERTIES OF HIGHLY ORDERED SUB-30-nm PHASE CHANGE MATERIALS (GST) NANOPARTICLE ARRAYS". Surface Review and Letters 17, nr 04 (sierpień 2010): 405–10. http://dx.doi.org/10.1142/s0218625x10014259.
Pełny tekst źródłaMakino, Kotaro, Kosaku Kato, Yuta Saito, Paul Fons, Alexander V. Kolobov, Junji Tominaga, Takashi Nakano i Makoto Nakajima. "Terahertz spectroscopic characterization of Ge2Sb2Te5 phase change materials for photonics applications". Journal of Materials Chemistry C 7, nr 27 (2019): 8209–15. http://dx.doi.org/10.1039/c9tc01456j.
Pełny tekst źródłaSun, Zhi Mei, Yuan Chun Pan, Bai Sheng Sa i Jian Zhou. "Ab Initio Study on Hexagonal Ge2Sb2Te5-A Phase-Change Material for Nonvolatile Memories". Materials Science Forum 687 (czerwiec 2011): 7–11. http://dx.doi.org/10.4028/www.scientific.net/msf.687.7.
Pełny tekst źródłaLiu, Cheng, Yonghui Zheng, Tianjiao Xin, Yunzhe Zheng, Rui Wang i Yan Cheng. "The Relationship between Electron Transport and Microstructure in Ge2Sb2Te5 Alloy". Nanomaterials 13, nr 3 (31.01.2023): 582. http://dx.doi.org/10.3390/nano13030582.
Pełny tekst źródłaGuo, Pengfei, Andrew Sarangan i Imad Agha. "A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators". Applied Sciences 9, nr 3 (4.02.2019): 530. http://dx.doi.org/10.3390/app9030530.
Pełny tekst źródłaKang, Shinyoung, Juyoung Lee, Myounggon Kang i Yunheub Song. "Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications". Electronics 9, nr 8 (7.08.2020): 1268. http://dx.doi.org/10.3390/electronics9081268.
Pełny tekst źródłaAlip, Rosalena Irma, Ryota Kobayashi, Yu Long Zhang, Zulfakri bin Mohamad, You Yin i Sumio Hosaka. "A Novel Phase Change Memory with a Separate Heater Characterized by Constant Resistance for Multilevel Storage". Key Engineering Materials 534 (styczeń 2013): 136–40. http://dx.doi.org/10.4028/www.scientific.net/kem.534.136.
Pełny tekst źródłaKim, Yewon, Byeol Han, Yu-Jin Kim, Jeeyoon Shin, Seongyoon Kim, Romel Hidayat, Jae-Min Park, Wonyong Koh i Won-Jun Lee. "Atomic layer deposition and tellurization of Ge–Sb film for phase-change memory applications". RSC Advances 9, nr 30 (2019): 17291–98. http://dx.doi.org/10.1039/c9ra02188d.
Pełny tekst źródłaQiao, Yang, Jin Zhao, Haodong Sun, Zhitang Song, Yuan Xue, Jiao Li i Sannian Song. "Pt Modified Sb2Te3 Alloy Ensuring High−Performance Phase Change Memory". Nanomaterials 12, nr 12 (10.06.2022): 1996. http://dx.doi.org/10.3390/nano12121996.
Pełny tekst źródłaChao, Der-Sheng, Yi-Chan Chen, Fred Chen, Ming-Jung Chen, Philip H. Yen, Chain-Ming Lee, Wei-Su Chen, Chenhsin Lien, Ming-Jer Kao i Ming-Jinn Tsai. "Enhanced Thermal Efficiency in Phase-Change Memory Cell by Double GST Thermally Confined Structure". IEEE Electron Device Letters 28, nr 10 (październik 2007): 871–73. http://dx.doi.org/10.1109/led.2007.906084.
Pełny tekst źródłaAhn, Jun-Ku, Kyoung-Woo Park, Sung-Gi Hur, Nak-Jin Seong, Chung-Soo Kim, Jeong-Yong Lee i Soon-Gil Yoon. "Metalorganic chemical vapor deposition of non-GST chalcogenide materials for phase change memory applications". Journal of Materials Chemistry 20, nr 9 (2010): 1751. http://dx.doi.org/10.1039/b922398c.
Pełny tekst źródłaSourav, Swapnil, Amit Krishna Dwivedi i Aminul Islam. "Investigating Phase Transform Behavior in Indium Selenide Based RAM and Its Validation as a Memory Element". Journal of Materials 2016 (22.09.2016): 1–7. http://dx.doi.org/10.1155/2016/6123268.
Pełny tekst źródłaAntolini, Alessio, Eleonora Franchi Scarselli, Antonio Gnudi, Marcella Carissimi, Marco Pasotti, Paolo Romele i Roberto Canegallo. "Characterization and Programming Algorithm of Phase Change Memory Cells for Analog In-Memory Computing". Materials 14, nr 7 (26.03.2021): 1624. http://dx.doi.org/10.3390/ma14071624.
Pełny tekst źródłaNguyen, Huu Tan, Andrzej Kusiak, Jean Luc Battaglia, Cecile Gaborieau, Yanick Anguy, Roberto Fallica, Claudia Wiemer, Alessio Lamperti i Massimo Longo. "Thermal Properties of In-Sb-Te Thin Films for Phase Change Memory Application". Advances in Science and Technology 95 (październik 2014): 113–19. http://dx.doi.org/10.4028/www.scientific.net/ast.95.113.
Pełny tekst źródłaShao, Mingyue, Yang Qiao, Yuan Xue, Sannian Song, Zhitang Song i Xiaodan Li. "Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications". Nanomaterials 13, nr 4 (5.02.2023): 633. http://dx.doi.org/10.3390/nano13040633.
Pełny tekst źródłaInoue, Nobuki, i Hisao Nakamura. "Structural transition pathway and bipolar switching of the GeTe–Sb2Te3 superlattice as interfacial phase-change memory". Faraday Discussions 213 (2019): 303–19. http://dx.doi.org/10.1039/c8fd00093j.
Pełny tekst źródłaNoor, Nafisa, Sadid Muneer, Raihan Sayeed Khan, Anna Gorbenko i Helena Silva. "Amorphized length and variability in phase-change memory line cells". Beilstein Journal of Nanotechnology 11 (29.10.2020): 1644–54. http://dx.doi.org/10.3762/bjnano.11.147.
Pełny tekst źródłaLi, Tao, Liang Cai Wu, Zhi Tang Song, San Nian Song, Feng Rao i Bo Liu. "Carbon-Doped Sb-Rich Ge-Sb-Te Phase Change Material for High Speed and High Thermal Stability Phase Change Memory Applications". Materials Science Forum 898 (czerwiec 2017): 1834–38. http://dx.doi.org/10.4028/www.scientific.net/msf.898.1834.
Pełny tekst źródłaKim, Myoung Sub, Jin Hyung Jun, Jin Ho Oh, Hyeong Joon Kim, Jae Sung Roh, Suk Kyoung Hong i Doo Jin Choi. "Electrical Switching Characteristics of Nitrogen Doped Ge2Sb2Te5 Based Phase Change Random Access Memory Cell". Solid State Phenomena 124-126 (czerwiec 2007): 21–24. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.21.
Pełny tekst źródłaOh, Sang Ho, Kyungjoon Baek, Sung Kyu Son, Kyung Song, Jang Won Oh, Seung-Joon Jeon, Won Kim, Jong Hee Yoo i Kee Jeung Lee. "In situ TEM observation of void formation and migration in phase change memory devices with confined nanoscale Ge2Sb2Te5". Nanoscale Advances 2, nr 9 (2020): 3841–48. http://dx.doi.org/10.1039/d0na00223b.
Pełny tekst źródłaYoon, Jong Moon, Hu Young Jeong, Sung Hoon Hong, You Yin, Hyoung Seok Moon, Seong-Jun Jeong, Jun Hee Han i in. "Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory". J. Mater. Chem. 22, nr 4 (2012): 1347–51. http://dx.doi.org/10.1039/c1jm14190b.
Pełny tekst źródłaChen, Yimin, Nan Han, Fanshuo Kong, Jun-Qiang Wang, Chenjie Gu, Yixiao Gao, Guoxiang Wang i Xiang Shen. "Kinetics features of 2D confined Ge2Sb2Te5 ultrathin film". Applied Physics Letters 121, nr 6 (8.08.2022): 061904. http://dx.doi.org/10.1063/5.0100570.
Pełny tekst źródłaPathak, Anushmita, Shivendra Kumar Pandey i Jitendra Kumar Behera. "Optical band-gap evolution and local structural change in Ge2Sb2Te5 phase change material". Journal of Physics: Conference Series 2426, nr 1 (1.02.2023): 012045. http://dx.doi.org/10.1088/1742-6596/2426/1/012045.
Pełny tekst źródłaHamada, Seiti, Takafumi Horiike, Tomohiro Uno, Masato Ishikawa, Hideaki Machida, Yoshio Ohshita i Atsushi Ogura. "Evaluation of GexSbyTez Film Grown by Chemical Vapor Deposition". Materials Science Forum 725 (lipiec 2012): 289–92. http://dx.doi.org/10.4028/www.scientific.net/msf.725.289.
Pełny tekst źródłaKashem, Md Tashfiq Bin, Jake Scoggin, Helena Silva i Ali Gokirmak. "(Digital Presentation) Finite Element Modeling of Thermoelectric Effects in Phase Change Memory Cells". ECS Meeting Abstracts MA2022-01, nr 18 (7.07.2022): 1031. http://dx.doi.org/10.1149/ma2022-01181031mtgabs.
Pełny tekst źródłaKashem, Md Tashfiq Bin, Jake Scoggin, Ali Gokirmak i Helena Silva. "(Digital Presentation) Electrothermal Modeling of Interfacial Phase Change Memory". ECS Meeting Abstracts MA2022-01, nr 18 (7.07.2022): 1032. http://dx.doi.org/10.1149/ma2022-01181032mtgabs.
Pełny tekst źródłaKiouseloglou, Athanasios, Gabriele Navarro, Veronique Sousa, Alain Persico, Anne Roule, Alessandro Cabrini, Guido Torelli i in. "A Novel Programming Technique to Boost Low-Resistance State Performance in Ge-Rich GST Phase Change Memory". IEEE Transactions on Electron Devices 61, nr 5 (maj 2014): 1246–54. http://dx.doi.org/10.1109/ted.2014.2310497.
Pełny tekst źródłaYamamoto, Takuya, Shogo Hatayama, Yun-Heub Song i Yuji Sutou. "Influence of Thomson effect on amorphization in phase-change memory: dimensional analysis based on Buckingham’s П theorem for Ge2Sb2Te5". Materials Research Express 8, nr 11 (1.11.2021): 115902. http://dx.doi.org/10.1088/2053-1591/ac3953.
Pełny tekst źródłaMeng, Yingjie, Yimin Chen, Kexin Peng, Bin Chen, Chenjie Gu, Yixiao Gao, Guoxiang Wang i Xiang Shen. "GeTe ultrathin film based phase-change memory with extreme thermal stability, fast SET speed, and low RESET power energy". AIP Advances 13, nr 3 (1.03.2023): 035205. http://dx.doi.org/10.1063/5.0138286.
Pełny tekst źródłaZhang, Dan, Yifeng Hu, Haipeng You, Xiaoqin Zhu, Yuemei Sun, Hua Zou i Yan Zheng. "High Reliability and Fast-Speed Phase-Change Memory Based on Sb70Se30/SiO2 Multilayer Thin Films". Advances in Materials Science and Engineering 2018 (21.06.2018): 1–6. http://dx.doi.org/10.1155/2018/9693015.
Pełny tekst źródłaHira, Takashi, Takayuki Uchiyama, Kenta Kuwamura, Yuya Kihara, Tasuku Yawatari i Toshiharu Saiki. "Switching the Localized Surface Plasmon Resonance of Single Gold Nanorods with a Phase-Change Material and the Implementation of a Cellular Automata Algorithm Using a Plasmon Particle Array". Advances in Optical Technologies 2015 (2.02.2015): 1–5. http://dx.doi.org/10.1155/2015/150791.
Pełny tekst źródłaKashem, Md Tashfiq Bin, Sadid Muneer, Lhacene Adnane, Faruk Dirisaglik, Ali Gokirmak i Helena Silva. "(Digital Presentation) Calculation of the Energy Band Diagram and Estimation of Electronic Transport Parameters of Metastable Amorphous Ge2Sb2Te5". ECS Meeting Abstracts MA2022-01, nr 18 (7.07.2022): 1043. http://dx.doi.org/10.1149/ma2022-01181043mtgabs.
Pełny tekst źródłaCueto, O., C. Jahan, V. Sousa, J. F. Nodin, S. Syoud, L. Perniola, A. Fantini i in. "Analysis by simulation of amorphization current in phase change memory applied to pillar and GST confined type cells". Microelectronic Engineering 88, nr 5 (maj 2011): 827–32. http://dx.doi.org/10.1016/j.mee.2010.09.022.
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