Gotowe bibliografie tematyczne / Peak-to-Valley Current Ratio

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Gotowa bibliografia na temat „Peak-to-Valley Current Ratio”

Autor: Grafiati
Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "Peak-to-Valley Current Ratio"

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Oobo, Takashi, Riichiro Takemura, Michihiko Suhara, Yasuyuki Miyamoto i Kazuhito Furuya. "High Peak-to-Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes". Japanese Journal of Applied Physics 36, Part 1, No. 8 (15.08.1997): 5079–80. http://dx.doi.org/10.1143/jjap.36.5079.

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Huang, C. I., M. J. Paulus, C. A. Bozada, S. C. Dudley, K. R. Evans, C. E. Stutz, R. L. Jones i M. E. Cheney. "AlGaAs/GaAs double barrier diodes with high peak‐to‐valley current ratio". Applied Physics Letters 51, nr 2 (13.07.1987): 121–23. http://dx.doi.org/10.1063/1.98588.

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Jiang, Zhi, Yiqi Zhuang, Cong Li i Ping Wang. "Tunnel Dielectric Field-Effect Transistors with High Peak-to-Valley Current Ratio". Journal of Electronic Materials 46, nr 2 (3.11.2016): 1088–92. http://dx.doi.org/10.1007/s11664-016-5021-4.

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Duschl, R., O. G. Schmidt, G. Reitemann, E. Kasper i K. Eberl. "High room temperature peak-to-valley current ratio in Si based Esaki diodes". Electronics Letters 35, nr 13 (1999): 1111. http://dx.doi.org/10.1049/el:19990728.

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Zhang, Baoqing, Liuyun Yang, Ding Wang, Patrick Quach, Shanshan Sheng, Duo Li, Tao Wang i in. "Repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown on silicon". Applied Physics Letters 121, nr 19 (7.11.2022): 192107. http://dx.doi.org/10.1063/5.0127379.

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We report repeatable AlN/GaN resonant tunneling diodes (RTDs) grown on a silicon substrate by plasma-assisted molecular-beam epitaxy. The RTDs exhibit stable negative differential resistance without hysteresis at room temperature, where no degradation is observed even after 500 continuous bidirectional sweeps. The peak-to-valley current ratio is 1.36, and the peak current density is 24.38 kA/cm2. When the temperature is changed from 77 to 475 K, the peak current remains almost unchanged and the valley current increases gradually, resulting in a reduced peak-to-valley current ratio from 1.59 to 1.07. Our work softens the material quality constraints on realizing the room-temperature repeatable negative differential resistance and paves the way to low-cost III-nitride-based monolithic and hybrid microwave integrated circuits on large-size silicon wafers.
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Wang, Y. H., H. C. Wei i M. P. Houng. "Demonstration of high peak‐to‐valley current ratio in anN‐p‐nAlGaAs/GaAs structure". Journal of Applied Physics 73, nr 11 (czerwiec 1993): 7990–92. http://dx.doi.org/10.1063/1.353913.

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Reddy, V. K., A. J. Tsao i D. P. Neikirk. "High peak-to-valley current ratio AlGaAs/AlAs/GaAs double barrier resonant tunnelling diodes". Electronics Letters 26, nr 21 (1990): 1742. http://dx.doi.org/10.1049/el:19901119.

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Potter, Robert C., Amir A. Lakhani, Dana Beyea i Harry Hier. "Enhancement of current peak‐to‐valley ratio in In0.52Al0.48As/In0.53Ga0.47As ‐based resonant tunneling diodes". Journal of Applied Physics 63, nr 12 (15.06.1988): 5875–76. http://dx.doi.org/10.1063/1.340278.

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Duong, Ngoc Thanh, Seungho Bang, Seung Mi Lee, Dang Xuan Dang, Dong Hoon Kuem, Juchan Lee, Mun Seok Jeong i Seong Chu Lim. "Parameter control for enhanced peak-to-valley current ratio in a MoS2/MoTe2 van der Waals heterostructure". Nanoscale 10, nr 26 (2018): 12322–29. http://dx.doi.org/10.1039/c8nr01711e.

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LIANG, Dong-Shong, Kwang-Jow GAN, Cheng-Chi TAI i Cher-Shiung TSAI. "Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio". IEICE Transactions on Electronics E92-C, nr 5 (2009): 635–38. http://dx.doi.org/10.1587/transele.e92.c.635.

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Rozprawy doktorskie na temat "Peak-to-Valley Current Ratio"

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Tsai, Hann-Huei, i 蔡瀚輝. "The Study and Fabrication of High Peak-to-Valley Current Ratio Negative Differential Resistance Microwave Devices". Thesis, 1994. http://ndltd.ncl.edu.tw/handle/14236358384458399026.

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碩士
國立成功大學
電機工程研究所
82
Microwave devices play an important role in wireless The high frequency oscillator is a significant element of devices. The tranditional Esaki tunnel diodes were widely used in applications. But the operational frequency is limited by the capacitance. Recently, the high quality heterojunctions and microstructures are possible with the advance of the growth techniques. The double barrier resonant tunneling diodes have a deal of interests in these years. Although they can operate at THz, the thermal current is large due to the lower barrier The peak-to-valley current ratio (PVCR) of the double barrier tunneling diode is therefore small then it of the tranditional diode. The resonant interband tunneling (RIT) structure combines advantages of these two devices. Hence, it can operate at high frequency with low excess current. First, we study the transmission coefficient and the current- voltage characteristics based on the k.p theory. The physics of this device are investigated. The optimum parameters of the will be obtained by considering the heavily doped effect. The GaAs/ InGaAs and InAlAs/InGaAs double quantum well RIT diodes have grown. The PVCR of GaAs/InGaAs RIT diode is about 3. For the sake the intrinsic property of the InAlAs/InGaAs material system, the of InAlAs/InGaAs is better and over 140 at room temperature. As know, this is the highest room temperature PVCR ever reported in tunneling devices. Moreover, the influence of device with the central barrier thickness has also been studied. The value is 20A. We study two kinds of delta-doping induced RIT finally. One was PIN interband tunneling diode and the other is single barrier RIT diode. The PVCRs of these two structures are 5 3, respectively. These values are comparable with the the similar diagram, such as InAs/AlSb/GaSb and InAs/ AlSb/GaSb/AlSb/InAs RIT diodes, etc.
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Mahajan, Mehak. "Charge Density Wave-driven Carrier Transport in Layered Heterostructures". Thesis, 2022. https://etd.iisc.ac.in/handle/2005/5850.

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Metal-based electronics remain one of the longstanding goals of researchers to achieve ultra-fast and radiation-hard electronic circuits. Generally, metals are primarily used as passive conductors in modern electronics and do not play an active role. Nanoscale materials with distinctive size-dependent properties provide opportunities to achieve new device functionalities. Ta-based di-chalcogenides, particularly 1T-TaS2 and 2H-TaSe2, which form layered structures and exhibit charge density waves (CDW), are promising in this context. CDW is a macroscopic state shown by materials with reduced dimensions, for example, one-dimensional and layered two-dimensional crystals. It results from the modulation in the electronic charge arising due to a periodic modulation in the crystal lattice. 1T-TaS2 exhibits one of the strongest known CDW characteristics enabling temperature-dependent distinct resistivity phases. The nearly commensurate (NC) to the incommensurate (IC) CDW phase transition that usually occurs at 353 K and can be driven electrically at room temperature is of high practical interest. However, resistivity switching during this phase transition is weak (< 2) and cannot be modulated by an external gate voltage – limiting its widespread usage. Using a back-gated 1T-TaS2/2H-MoS2 heterojunction, we show resistivity switching up to 17.3, which is ~14.5-fold higher than standalone TaS2. We demonstrate a low barrier electrical contact between a TaS2 source and a MoS2 channel, promising “all-2D” flexible electronics. Additionally, we show that the usual resistivity switching in TaS2 due to different phase transitions is accompanied by a surprisingly strong modulation in the Schottky barrier height (SBH) at the TaS2/MoS2 interface – providing an additional knob to control the degree of the phase-transition-driven resistivity switching by an external gate voltage. In particular, the commensurate (C) to triclinic (T) CDW phase transition increases the SBH owing to a collapse of the Mott gap in TaS2. The change in SBH allows us to estimate an electrical Mott gap opening of ~71 ± 7 meV in the C phase of TaS2. The results show a promising pathway to externally control and amplify the CDW induced resistivity switching. Further, we achieve gate- and light-controlled negative differential resistance (NDR) characteristics in an asymmetric 1T-TaS2/2H-MoS2 T-junction by exploiting the electrically driven CDW phase transition of TaS2. The device operation is purely governed by majority charge carriers, making it distinct from typical tunneling-based NDR devices, thus avoiding the bottleneck of weak tunneling efficiency in van der Waals heterojunctions. Consequently, we achieve a peak current density over 10^5 nA μm^(-2), which is about two orders of magnitude higher than that obtained in typical layered material-based NDR implementations. An external gate voltage and photo-gating can effectively tune the peak current density. The device characteristics show a peak-to-valley current ratio (PVCR) of 1.06 at 290 K, increasing to 1.59 at 180 K. To exploit the low thermal conductivity of 1T-TaS2 and 2H-TaSe2 in a local heater structure, we insert 2H-TaSe2 in between TaS2 and MoS2 layers, thereby forming a triple-layered 1T-TaS2/2H-TaSe2/2H-MoS2 T-junction. TaSe2 acts as a buffer layer preventing the CDW-induced SBH modulation at TaS2/MoS2 interface. This will allow efficient thermionic switching of carriers resulting from sharp temperature rise in the junction due to electrically driven TaS2 phase transitions. Interestingly, the device can toggle between the current increment and NDR characteristics by simply changing the biasing conditions. At TaS2 biasing, the heterostructure device shows a current increment by a factor of 3 at 300 K, which gets enhanced up to ~10^3 at 77 K, beneficial for various switching circuits and sensing applications. However, under TaSe2 biasing, the device exhibits NDR characteristics with a PVCR of 1.04 and 1.10 at 300 K and 77 K, respectively. The external back-gate voltage can effectively tune the current enhancement factor and NDR. The devices mentioned above are robust against ambiance-induced degradation, and the characteristics repeat in multiple measurements over more than six months. Conventional metals, in general, do not exhibit strong photoluminescence. However, we found that 2H-TaSe2 exhibits a surprisingly strong optical absorption and photoluminescence resulting from inter-band transitions. We use this perfect combination of electrical and optical properties in several optoelectronic applications. We show a seven-fold enhancement in the photoluminescence intensity of otherwise weakly luminescent multi-layer MoS2 through non-radiative resonant energy transfer from TaSe2 transition dipoles. Using a combination of scanning photocurrent and time-resolved photoluminescence measurements, we also show that the hot electrons generated by light absorption in TaSe2 have a relatively long lifetime, unlike conventional metals, making TaSe2 an excellent hot-electron injector. Finally, we show a vertical TaSe2/MoS2/graphene photodetector demonstrating a responsivity greater than 10 AW^(-1) at 0.1 MHz - one of the fastest reported photodetectors using MoS2. The findings will boost device applications that exploit CDW phase transitions, such as ultra-broadband photodetection, negative differential conductance, thermal sensors, fast oscillator, and threshold switching in neuromorphic chips. These functionalities will enable the implementation of active metal-based circuits.
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Części książek na temat "Peak-to-Valley Current Ratio"

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Vanbésien, O., R. Bouregba, P. Mounaix i D. Lippens. "Temperature Dependence of Peak to Valley Current Ratio in Resonant Tunneling Double Barriers". W Resonant Tunneling in Semiconductors, 107–16. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3846-2_10.

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Streszczenia konferencji na temat "Peak-to-Valley Current Ratio"

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Wang, Wei, Hao Sun, Lingyun Li i Xiaowei Sun. "InP-based resonant tunneling diode with high peak-to-valley current ratio for THz application". W 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2012). IEEE, 2012. http://dx.doi.org/10.1109/irmmw-thz.2012.6380445.

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Shin, Sunhae, Min Woo Ryu i Kyung Rok Kim. "Negative Differential resistance devices with ultra-high peak-to-valley current ratio based on silicon nanowire structure". W 2012 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2012. http://dx.doi.org/10.1109/snw.2012.6243340.

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Inata, Tsuguo, Shunichi Muto, Toshio Fujii i Satoshi Hiyamizu. "Extremely High Peak-to-Valley Current Ratio Obtained in an InAlAs/InGaAs Resonant Tunneling Barrier Structure Grown by MBE". W 1986 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1986. http://dx.doi.org/10.7567/ssdm.1986.d-9-2.

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Nagase, M., T. Takahashi i M. Shimizu. "GaN/AlN Resonant Tunneling Diode with High Peak-to-Valley Current Ratio Grown by Metal-Organic Vapor Phase Epitaxy". W 2013 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2013. http://dx.doi.org/10.7567/ssdm.2013.j-6-5.

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Kanazawa, Tohru, Atsushi Morosawa, Masahiro Watanabe i Masahiro Asada. "High Peak-to-Valley Current Ratio of CdF2/CaF2 Resonant Tunneling Diode grown on Si(100) substrates by Nanoarea Local Epitaxy". W 2005 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2005. http://dx.doi.org/10.7567/ssdm.2005.g-1-7.

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Shinkawa, A., M. Wakiya, Y. Maeda, T. Tsukamoto i Y. Suda. "Hole-Tunneling Si1-xGex/Si ASDQW RTD with High Resonant Current and High Peak-to-Valley Current Ratio". W 2016 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2016. http://dx.doi.org/10.7567/ssdm.2016.ps-9-08.

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Tonegawa, H., Y. Kumagai, S. Fukuyama, K. Hirose i M. Watanabe. "Room Temperature High Peak-to-valley Current Ratio of CaF2/Si Triple-barrier Resonant-tunneling Diode Grown on Si". W 2018 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2018. http://dx.doi.org/10.7567/ssdm.2018.a-3-05.

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Glytsis, Elias N., Thomas K. Gaylord i Kevin F. Brennan. "Current-voltage characteristics and space-charge effects in semiconductor electron-wave filter/emitters". W OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.fz7.

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Starting from fundamental principles, the quantitative analogies between electron waves in semiconductors and electromagnetic waves in dielectrics have been developed.1 A voltage-biased semiconductor superlattice structure that can serve simultaneously as an electron filter and a tunable emitter has recently been proposed.2 The current-voltage (I–V) and transmission characteristics of these structures are analyzed by means of a nonself-consistent (NSC) and a self-consistent (SC) calculation. For the NSC calculation, only the Schrodinger equation is solved, but for the SC calculation both the Schrodinger and Poisson equations are solved iteratively.3 The approach of Esaki et al4. is used for the computation of the I–V characteristics. It is shown that for low-to-medium Fermi energies, the effect of the space-charge on the filter/emitteroperation is small and results in a shift of the I–V and transmission characteristics toward higher bias voltages. Examples of Ga1-xAlxAs filter/emitters are presented. Resonant filter/emitters with a current peak-to-valley ratio of ~50, as well as nonresonant devices, are analyzed. Charge-density distributions are presented. Superlattice electron filters/emitters can be used as high-speed switches and oscillators and as monoenergetic emitters in electroluminescent devices and photodetectors.
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Burg, G. W., B. Fallahazad, K. Kim, N. Prasad, Takashi Taniguchi, Kenji Watanabe, L. F. Register i E. Tutuc. "Double bilayer graphene-WSe2 resonant tunneling heterostructures with high interlayer current densities and peak-to-valley ratios". W 2017 75th Device Research Conference (DRC). IEEE, 2017. http://dx.doi.org/10.1109/drc.2017.7999393.

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Ramesh, Anisha, Paul R. Berger, Bastien Douhard, Wilfried Vandervorst i Roger Loo. "200-mm CVD Grown Si/SiGe Resonant Interband Tunnel Diodes Optimized for High Peak-to-Valley Current Ratios". W 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM). IEEE, 2012. http://dx.doi.org/10.1109/istdm.2012.6222481.

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