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Grönberg, Axel. "Emerging Non-Volatile Memory and Initial Experiences with PCM Main Memory". Thesis, Uppsala universitet, Institutionen för informationsteknologi, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-407070.
Pełny tekst źródłaSeong, Nak Hee. "A reliable, secure phase-change memory as a main memory". Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/50123.
Pełny tekst źródłaSELMO, SIMONE. "Functional analysis of In-based nanowires for low power phase change memory applications". Doctoral thesis, Università degli Studi di Milano-Bicocca, 2017. http://hdl.handle.net/10281/153247.
Pełny tekst źródłaPhase change memories (PCMs), based on chalcogenide alloys (mainly Ge2Sb2Te5), are the most promising candidate for the realization of “Storage Class Memories”, which would fill the gap between ‘‘operation’’ and ‘‘storage’’ memories. PCMs are also one of the few currently available technologies for the implementation of nanoeletronic synapses in high density neuromorphic systems. The main improvements needed in order to exploit the full potential of PCMs in these innovative applications are the reduction of the programming currents and power consumption, and further cell downscaling. Thanks to their nano-sized active volume to be programmed and self-heating behavior, phase change nanowires (NWs) are expected to exhibit improved memory performances with respected to commonly used thin-film/heater-based structures. The Ph. D. Thesis of the candidate reports the study of the phase change properties of ultra-thin In-based NWs for low power consuming PCMs, exploring the more promising features of this class of materials with respect to the commonly considered Ge-Sb-Te alloys. In particular, the self-assembly of In-Sb-Te, In-doped Sb and In-Ge-Te NWs was successfully achieved by Metal Organic Chemical Vapour Deposition (MOCVD), coupled to vapour-liquid-solid mechanism, catalysed by catalyst nanoparticles. The parameters influencing the NW self-assembly were studied and the compositional, morphological and structural analysis of the grown structures was performed. In all cases, NWs of several μm in length and with diameters as small as 15 nm were obtained. The experimental contribution of the Ph. D. candidate to the NWs growth study was mainly related to the substrates preparation, catalyst deposition and, morphological and elemental analysis of the grown samples. Moreover, the Ph. D. candidate has performed the functional analysis of In3Sb1Te2 and In-doped Sb NW-based PCM devices. To conduct that analysis, a suitable fabrication procedure of the devices and an appropriate electrical measuring set-up have been identified. Reversible and well reproducible phase change memory switching was demonstrated for In3Sb1Te2 and In-doped Sb NW devices, showing low working parameters, such as “RESET” voltage, current and power. The obtained results support the conclusion that In-based ultra-thin NWs are potential building blocks for the realization of ultra-scaled, high performance PCM devices.
Garbin, Daniele. "Etude de la variabilité des technologies PCM et OxRAM pour leur utilisation en tant que synapses dans les systèmes neuromorphiques". Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT133/document.
Pełny tekst źródłaThe human brain is made of a large number of interconnected neural networks which are composed of neurons and synapses. With a low power consumption of only few Watts, the human brain is able to perform computational tasks that are out of reach for today’s computers, which are based on the Von Neumann architecture. Neuromorphic hardware design, taking inspiration from the human brain, aims to implement the next generation, non-Von Neumann computing systems. In this thesis, emerging non-volatile memory devices, specifically Phase-Change Memory (PCM) and Oxide-based resistive memory (OxRAM) devices, are studied as artificial synapses in neuromorphic systems. The use of PCM devices as binary probabilistic synapses is studied for complex visual pattern extraction applications, evaluating the impact of the PCM programming conditions on the system-level power consumption.A programming strategy is proposed to mitigate the impact of PCM resistance drift. It is shown that, using scaled devices, it is possible to reduce the synaptic power consumption. The OxRAM resistance variability is evaluated experimentally through electrical characterization, gathering statistics on both single memory cells and at array level. A model that allows to reproduce OxRAM variability from low to high resistance state is developed. An OxRAM-based convolutional neural network architecture is then proposed on the basis of this experimental work. By implementing the computation of convolution directly in memory, the Von Neumann bottleneck is avoided. Robustness to OxRAM variability is demonstrated with complex visual pattern recognition tasks such as handwritten characters and traffic signs recognition
Balasubramanian, Sanchayeni. "Improving Hard Disk Drive Write IO Performance with Phase Change Memory as a Buffer Cache". University of Cincinnati / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1511881125562903.
Pełny tekst źródłaBaek, Seungcheol. "High-performance memory system architectures using data compression". Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/51863.
Pełny tekst źródłaTrabelsi, Ahmed. "Modulation des niveaux de résistance dans une mémoire PCM pour des applications neuromorphiques". Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT027.
Pełny tekst źródłaThe exponential growth of data in recent years has led to a significant increase in energy consumption, creating a pressing need for innovative memory technologies to overcome the limitations of conventional solutions. This data deluge has resulted in a forecasted consumption surge in data centers, with an expected fourfold increase in data by 2025 compared to the present volume. To address this challenge, emerging memory technologies such as RRAM (Resistive RAM), PCM (Phase-Change Memory), and MRAM (Magnetoresistive RAM) are being developed to offer high density, fast access times, and non-volatility, thereby revolutionizing storage and memory solutions (Molas & Nowak, 2021).One promising technique to address the need for innovative memory technologies is the use of frequency modulation to modulate resistance in PCM which is a crucial aspect of its use in neuromorphic computing. PCM is a non-volatile memory technology based on the reversible phase transition between amorphous and crystalline phases of certain materials. The ability to alter conductance levels makes PCM well-suited for synaptic realizations in neuromorphic computing. The progressive crystallization of the phase-change material and the subsequent increase in device conductance enable PCM to be used in neuromorphic applications. Additionally, PCM-based memristor neural networks have been developed, and the resistance drift effect in PCM has been quantified, opening up new paths for the development of PCM-based memristor neuromorphic accelerators. Furthermore, frequency modulation has been identified as a promising technique to modulate resistance in PCM. This approach can be applied to PCM as well as RRAM, and it is expected to yield improved learning effects in more complex networks using multi-level cells (Wang et al., 2011). The primary aim of this thesis is to explore innovative methods for controlling resistance levels in PCM devices with a focus on their application in neuromorphic systems. The research involves a comprehensive understanding of the mechanisms underlying PCM devices and an identification of parameters that may influence the reliability of these devices. Additionally, the thesis aims to propose a novel approach to effectively modulate resistance levels in PCM devices, contributing to advancements in this field
Jensen, Peter, i Christopher Thacker. "A NEW GENERATION OF RECORDING TECHNOLOGY THE SOLID STATE RECORDER". International Foundation for Telemetering, 1998. http://hdl.handle.net/10150/607372.
Pełny tekst źródłaThe Test & Evaluation community is starting to migrate toward solid state recording. This paper outlines some of the important areas that are new to solid state recording as well as examining some of the issues involved in moving to a direct recording methodology. Some of the parameters used to choose a solid state memory architecture are included. A matrix to compare various methods of data recording, such as solid state and magnetic tape recording, will be discussed. These various methods will be evaluated using the following parameters: Ruggedness (Shock, Vibration, Temperature), Capacity, and Reliability (Error Correction). A short discussion of data formats with an emphasis on efficiency and usability is included.
Kiouseloglou, Athanasios. "Caractérisation et conception d' architectures basées sur des mémoires à changement de phase". Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT128/document.
Pełny tekst źródłaSemiconductor memory has always been an indispensable component of modern electronic systems. The increasing demand for highly scaled memory devices has led to the development of reliable non-volatile memories that are used in computing systems for permanent data storage and are capable of achieving high data rates, with the same or lower power dissipation levels as those of current advanced memory solutions.Among the emerging non-volatile memory technologies, Phase Change Memory (PCM) is the most promising candidate to replace conventional Flash memory technology. PCM offers a wide variety of features, such as fast read and write access, excellent scalability potential, baseline CMOS compatibility and exceptional high-temperature data retention and endurance performances, and can therefore pave the way for applications not only in memory devices, but also in energy demanding, high-performance computer systems. However, some reliability issues still need to be addressed in order for PCM to establish itself as a competitive Flash memory replacement.This work focuses on the study of embedded Phase Change Memory in order to optimize device performance and propose solutions to overcome the key bottlenecks of the technology, targeting high-temperature applications. In order to enhance the reliability of the technology, the stoichiometry of the phase change material was appropriately engineered and dopants were added, resulting in an optimized thermal stability of the device. A decrease in the programming speed of the memory technology was also reported, along with a residual resistivity drift of the low resistance state towards higher resistance values over time.A novel programming technique was introduced, thanks to which the programming speed of the devices was improved and, at the same time, the resistance drift phenomenon could be successfully addressed. Moreover, an algorithm for programming PCM devices to multiple bits per cell using a single-pulse procedure was also presented. A pulse generator dedicated to provide the desired voltage pulses at its output was designed and experimentally tested, fitting the programming demands of a wide variety of materials under study and enabling accurate programming targeting the performance optimization of the technology
Navarro, Gabriele. "Analyse de la fiabilité de mémoires à changement de phase embarquées basées sur des matériaux innovants". Phd thesis, Université de Grenoble, 2013. http://tel.archives-ouvertes.fr/tel-01061792.
Pełny tekst źródłaPigot, Corentin. "Caractérisation électrique et modélisation compacte de mémoires à changement de phase". Electronic Thesis or Diss., Aix-Marseille, 2019. http://www.theses.fr/2019AIXM0185.
Pełny tekst źródłaPhase-change memory (PCM) is arguably the most mature emerging nonvolatile memory, foreseen for the replacement of the mainstream NOR-Flash memory for the future embedded applications. To allow the design of new PCM-based products, SPICE simulations, thus compact models, are needed. Those models need to be fast, robust and accurate; nowadays, no published model is able to fill all these requirements.The goal of this thesis is to propose a new compact model of PCM, enabling PCM-based circuit design. The model that we have developed is entirely continuous, and is validated on a wide range of voltage, current, time and temperature. Built on physical insights of the device, a thermal runaway in the Poole-Frenkel mechanism is used to model the threshold switching of the amorphous phase. Besides, the introduction of a new variable representing the melted fraction, depending only on the internal temperature, along with a crystallization speed depending on the amorphous fraction, allow the accurate modeling of all the temporal dynamics of the phase transitions. Moreover, an optimized model card extraction flow is proposed following the model validation, relying on a sensibility analysis of the model card parameters and a simple set of electrical characterizations. It enables the adjustment of the model to any process variation, and thus ensures its accuracy for the design modeling at every step of the technology development
Bayle, Raphaël. "Simulation des mécanismes de changement de phase dans des mémoires PCM avec la méthode multi-champ de phase". Thesis, Institut polytechnique de Paris, 2020. http://www.theses.fr/2020IPPAX035.
Pełny tekst źródłaPhase change memories (PCM) exploit the variation of resistance of a small volume of phase change material: the binary information is coded through the amorphous or crystalline phase of the material. The phase change is induced by an electrical current, which heats the material by the Joule effect. Because of its fast and congruent crystallization, theGe2Sb2Te5 alloy is widely used for PCM. Nevertheless, to get a better reliability at high temperatures, which is required e.g. for automotive applications, STMicroelectronics uses a Ge-rich GeSbTe alloy. In this alloy, chemical segregation and appearance of a new crystalline phase occur during crystallization. The distribution of phases and alloy components are critical for the proper functioning of the memory cell; thus, predictive simulations would be extremely useful. Phase field models are used for tracking interfaces between areas occupied by different phases. In this work, a multi-phase field model allowing simulating the distribution of phases and species in Ge-rich GeSbTe has been developed. The parameters of the model have been determined using available data on this alloy. Two types of simulations have been carried out, firstly to describe crystallization during annealing of initially amorphous deposited thin layer; secondly to follow the evolution of phase distribution during memory operation using temperature fields that are typical for those operations. Comparisons between simulations and experiments show that they both exhibit the same features
Gasquez, Julien. "Conception de véhicules de tests pour l’étude de mémoires non-volatiles émergentes embarquées". Electronic Thesis or Diss., Aix-Marseille, 2022. http://www.theses.fr/2022AIXM0419.
Pełny tekst źródłaPhase change memory (PCM) is part of the strategy to develop non-volatiles memories embedded in advanced technology nodes (sub 28nm). Indeed, Flash-NOR memory is becoming more and more expensive to integrate in technologies with high permittivity dielectrics and metallic gates. The main objective of this thesis is therefore to realize tests vehicles in order to study an innovative PCM + OTS memory point and to propose solutions to fill its gaps and limitations according to the envisaged applications. The study is based on two different technologies: HCMOS9A and P28FDSOI. The first one is used as support for the development of a technological validation vehicle of the OTS+PCM memory point. The second one is used to demonstrate the surface obtained with an aggressive sizing of the memory point. Finally, an optimized readout circuit for this memory point has been realized allowing the compensation of leakage currents as well as the regulation of the bias voltages of the matrix during the reading
Green, Craig Elkton. "Composite thermal capacitors for transient thermal management of multicore microprocessors". Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/44772.
Pełny tekst źródłaSuri, Manan. "Technologies émergentes de mémoire résistive pour les systèmes et application neuromorphique". Phd thesis, Université de Grenoble, 2013. http://tel.archives-ouvertes.fr/tel-00935190.
Pełny tekst źródłaCoué, Martin. "Caractérisation électrique et étude TEM des problèmes de fiabilité dans les mémoires à changement de phase enrichis en germanium". Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAT018/document.
Pełny tekst źródłaIn this thesis we provide a detailed study of the mechanisms responsible for data loss in Ge-rich Ge2Sb2Te5 Phase-Change Memories, namely resistance drift over time and recrystallization of the amorphous phase. The context of this work is first presented with a rapid overview of the semiconductor memory market and a comparison of emerging non-volatile memories. The working principles of PRAM technology are introduced, together with its advantages, its drawbacks, and the physics governing the crystallization process in phase-change materials, before describing the reliability issues in which we are interested.A full electrical characterization of devices integrating germanium-enriched GST alloys is then proposed, starting with the characterization of the materials used in our PCM cells and introducing the benefits of Ge-rich GST alloys over standard GST. The electrical performances of devices integrating those materials are analyzed, with a statistical study of the SET & RESET characteristics, programming window, endurance and crystallization speed. We then focus on the main topic of this thesis by analyzing the resistance drift of the SET state of our Ge-rich devices, as well as the retention performances of the RESET state.In the last part, we investigate on the physical mechanisms involved in these phenomena by providing a detailed study of the cells' structure, thanks to Transmission Electron Microscopy (TEM). The experimental conditions and setups are described before presenting the results which allowed us to go deeper into the comprehension of the resistance drift and the recrystallization of the amorphous phase in Ge-rich devices. A discussion is finally proposed, linking the results of the electrical characterizations with the TEM analyses, leading to new perspectives for the optimization of PRAM devices
Zita, Francescovito. "Modello dinamico del cambiamento di fase in memorie PCM". Master's thesis, Alma Mater Studiorum - Università di Bologna, 2019. http://amslaurea.unibo.it/17673/.
Pełny tekst źródłaPehrson, Alan L. "The Effects of Early Postnatal PCP Administration on Performance in Locomotor Activity, Reference Memory, and Working Memory Tasks in C57BL/6 Mice". VCU Scholars Compass, 2007. http://scholarscompass.vcu.edu/etd/878.
Pełny tekst źródłaMills, Christopher Alan. "Investigations into low band-gap, semiconducting polymers". Thesis, Bangor University, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.340950.
Pełny tekst źródłaDesai, Avanti N. "Effects of Perinatal Polychlorinated Biphenyl Mixtures on Estrogen Receptor Beta, Hippocampus, and Learning and Memory". Bowling Green State University / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1182713137.
Pełny tekst źródłaRajagopal, Lakshmi. "Neonatal Phencyclidine (PCP) induced deficits in rats: A behavioural investigation of relevance to schizophrenia". Thesis, University of Bradford, 2011. http://hdl.handle.net/10454/5404.
Pełny tekst źródłaCURRAN, CHRISTINE PERDAN. "THE ROLE OF ARYL HYDROCARBON RECEPTOR AND CYP1A2 IN PCB-INDUCED DEVELOPMENTAL NEUROTOXICITY". University of Cincinnati / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1196254087.
Pełny tekst źródłaStark, Love. "Outlier detection with ensembled LSTM auto-encoders on PCA transformed financial data". Thesis, KTH, Skolan för elektroteknik och datavetenskap (EECS), 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-296161.
Pełny tekst źródłaFinansinstitut genererar idag en stor mängd data, data som kan innehålla intressant information värd att undersöka för att främja den ekonomiska tillväxten för nämnda institution. Det finns ett intresse för att analysera dessa informationspunkter, särskilt om de är avvikande från det normala dagliga arbetet. Att upptäcka dessa avvikelser är dock inte en lätt uppgift och ej möjligt att göra manuellt på grund av de stora mängderna data som genereras dagligen. Tidigare arbete för att lösa detta har undersökt användningen av maskininlärning för att upptäcka avvikelser i finansiell data. Tidigare studier har visat på att förbehandlingen av datan vanligtvis står för en stor del i förlust av emphinformation från datan. Detta arbete syftar till att studera om det finns en korrekt balans i hur förbehandlingen utförs för att behålla den högsta mängden information samtidigt som datan inte förblir för komplex för maskininlärnings-modellerna. Det emphdataset som användes bestod av valutatransaktioner som tillhandahölls av värdföretaget och förbehandlades genom användning av Principal Component Analysis (PCA). Huvudsyftet med detta arbete är att undersöka om en ensemble av Long Short-Term Memory Recurrent Neural Networks (LSTM), konfigurerad som autoenkodare, kan användas för att upptäcka avvikelser i data och om ensemblen är mer precis i sina predikteringar än en ensam LSTM-autoenkodare. Tidigare studier har visat att en ensembel avautoenkodare kan visa sig vara mer precisa än en singel autokodare, särskilt när SkipCells har implementerats (en konfiguration som hoppar över vissa av LSTM-cellerna för att göra modellerna mer varierade). En datapunkt kommer att betraktas som en avvikelse om LSTM-modellen har problem med att återskapa den väl, dvs ett mönster som nätverket har svårt att återskapa, vilket gör datapunkten tillgänglig för vidare undersökningar. Resultaten visar att en ensemble av LSTM-modeller predikterade mer precist än en singel LSTM-modell när det gäller att återskapa datasetet, och då enligt vår definition av avvikelser, mer precis avvikelse detektering. Resultaten från förbehandlingen visar olika metoder för att uppnå ett optimalt antal komponenter för dina data genom att studera bibehållen varians och precision för PCA-transformation jämfört med modellprestanda. En av slutsatserna från arbetet är att en ensembel av LSTM-nätverk kan visa sig vara mycket kraftfulla, men att alternativ till förbehandling bör undersökas, såsom categorical embedding istället för PCA.
Zavalloni, Francesco. "Simulazione in ambiente Matlab di calcolo in memoria basato su celle a cambiamento di fase". Master's thesis, Alma Mater Studiorum - Università di Bologna, 2021.
Znajdź pełny tekst źródłaMoura, Paula Jaqueline de. "Contribuição para o estudo da memória de reconhecimento social em ratos". Universidade de São Paulo, 2008. http://www.teses.usp.br/teses/disponiveis/41/41135/tde-26092008-175018/.
Pełny tekst źródłaThe intruder-resident paradigm has been extensively employed in studies of social recognition memory in rodents. Typically, adult rats, named residents, are exposed to two 5-min successive encounters with the same juvenile intruder or with two different juveniles; the time interval between the encounters is 30 min. The amount of social behaviors exhibited by the resident rats towards the same intruder juvenile in the second encounter is substantially smaller when compared to both that seen in the first encounter and that seen towards a different juvenile; these results characterize social recognition memory. When the time interval between encounters is increased to 60 min, that reduction of the investigation towards the familiar juvenile intruder vanishes, which is seen as evidence that social recognition memory corresponds to a short-term memory mechanism. The aim of this study was to contribute for our understanding of social recognition memory in rats. Three experiments were run. The first experiment evaluated to which extent both social behaviors and social recognition memory are influenced by temporal phase effects. The second experiment evaluated to which extent the increase in the duration of the first encounter renders social recognition memory longer. The third experiment evaluated to which extent the transportation of the resident rats from the experimental room to the animal facilities either 0.5 or 6 hours after the first encounter, interferes with social recognition memory. The results showed that (1) the expression of social behaviors and of the social recognition memory are modulated temporal phase effects, being stronger when animals are tested in their inactive phase (Chapter 2); thus, this aspect has to be considered in studies on sociability, (2) the increase of the first encounter duration for 2 hours or longer renders social recognition memory to last at least 24 hours (Chapter 3); this allows to question that social recognition memory corresponds to a short-term memory mechanism, and (3) transportation of the resident rats to the animal facilities 0.5, but not 6 hours, after the end of the first encounter disrupts social recognition memory (Chapter 4), indicating that one has to be cautious about usual laboratory routines, because they may interfere with performance of the memory tasks when executed a short time after training the animals.Associated with these relevant experimental observations, these studies allowed proposing novel strategies for data analysis and discussing conceptual issues about the characterization of social recognition memory that give a substantial contribution for this area.
Dvořák, Miroslav. "Disk na bázi paměti FLASH". Master's thesis, Vysoké učení technické v Brně. Fakulta informačních technologií, 2012. http://www.nusl.cz/ntk/nusl-236569.
Pełny tekst źródłaSouza, Lucas Canto de. "Participação do sistema histaminérgico em estruturas límbicas sobre a memória de esquiva inibitória em camundongos". Universidade de São Paulo, 2015. http://www.teses.usp.br/teses/disponiveis/59/59134/tde-01022016-092907/.
Pełny tekst źródłaSeveral studies using animal models have shown that limbic structures like the amygdala (AMG), dorsal hippocampus (DH) and medial prefrontal cortex (mPFC) are involved in emotional memory consolidation. Whereas the synthesis of new proteins is necessary for memory consolidation process, and that opposite results related to the interaction of protein synthesis inhibitors and foot-shock intensity on memory consolidation have been reported, the present study aims to investigate the hypothesis of protein synthesis in AMG, the DH and mPFC associated with the consolidation of aversive memory occurs differently in these three structures, according to the intensity of the aversive stimulus and the expression of proteins involved in histaminergic transmission would be modified during the process of consolidation and emotional expression of aversive memory. The aim of this study was to evaluate the role of protein synthesis in AMG, DH and mPFC in consolidation of aversive memory based on moderate and intense conditioning; to investigate the expression of proteins related to histaminergic transmission in AMG, DH and mPFC after intense aversive conditioning. For this purpose two experiments were performed: in experiment 1 the anisomycin (ANI) was bilaterally microinjected into AMG or DH or mPFC of mice before being submitted the step-down inhibitory avoidance task using two unconditioned stimulus intensities: moderate or intense. In experiment 2, the variations in the gene expression of HDC enzyme (histidine decarboxylase - responsible for histamine synthesis) and the H1, H2 and H3 receptors were analyzed at different temporal spaces by real-time polymerase chain reaction (RT-PCR). The results of the first experiment demonstrate that microinjection of ANI in mPFC impairs the consolidation of inhibitory avoidance memory with moderate or intense unconditioned stimulus, however when administered intra-AMG and intra DH, ANI only impairs the consolidation of inhibitory avoidance memory under an intensive unconditioned stimulus. The experiment 2 demonstrates that during the consolidation of intense aversive memory there is a decrease of the genes expression levels: HDC in the dorsal hippocampus, Hrh3, Hrh1 in the amygdala, and Hrh3 in the medial prefrontal cortex. During retrieval the HDC and Hrh3 genes expression levels are increased and decreased, respectively in the AMG; the Hhr2 and Hrh3 genes expression levels are increased in the DH, and in the mPFC the HDC gene expression level is increased, and the Hrh1 and Hrh3 are decreased. During reconsolidation the amygdalas HDC and Hrh3 genes expression levels are decreased and the Hrh1 gene is increased. In the DH the Hrh1 gene levels are elevated and in the mPFC the HDC gene expression level is increased and the Hrh1 and Hrh3 are decreased. In the current study we conclude that under moderate aversiveness situations, the consolidation of this experience does not depend on protein synthesis in the AMG and in the DH, but in the mPFC. However, in situations with a high level of adversity, protein synthesis in this three structures are essential for the consolidation of such experience. In addition, the histaminergic genes are distinctly expressed in the AMG, DH and mPFC along the time scale of consolidation, retrieval and reconsolidation of the formation of fear memories.
Cook, Samantha. "The Effect of oestrogen in a series of models related to schizophrenia and Alzheimer¿s disease. A preclinical investigation into the effect of oestrogen on memory, executive function on and anxiety in response to pharmacological insult and in a model of natural forgetting". Thesis, University of Bradford, 2012. http://hdl.handle.net/10454/5508.
Pełny tekst źródłaAlves, Fabio Cesar. "Vivência, reflexão e combate: sobre Memórias do cárcere". Universidade de São Paulo, 2013. http://www.teses.usp.br/teses/disponiveis/8/8151/tde-31032014-112723/.
Pełny tekst źródłaThis study intends to offer an interpretation of the work Memórias do cárcere (1953), by Graciliano Ramos, having as its axis of analysis the configuration of the narrator throughout the account. By means of this configuration, the study aims at extracting, from the text that offers the confession of a subject who has one foot in the grave, the materials that were addressed by the writer. In this way, its possible to apprehend the internal structuration of this material as the sedimentation of a historically determined reality. The hypothesis is that, between the 1940s and 1950s, the narrators reconstruction of his experience in jail enables him, through the fusion of voices and temporalities and by means of an incisive reflection on a limit-situation, to question aspects of the Brazilian sociability, vicissitudes pertaining to the realm of party politics and dilemmas that characterize the complex situation of the dependent and engaged intellectual in modernity.
Gomes, Kátia Regina Maruyama. "Padrão de expressão gênica e localização tecidual no rato de um novo membro do Cluster gênico da enzima conversora da angiotensina I: variante-4". Universidade de São Paulo, 2008. http://www.teses.usp.br/teses/disponiveis/5/5131/tde-28012009-162314/.
Pełny tekst źródłaThe renin-angiotensin system (RAS) is essential to maintain the cardiovascular homeostasis. The angiotensin-converting enzyme (ACE) is a critical point in the biochemical activation of several active substances, notably angiotensin II. Evidence obtained in our laboratory using comparative genomic analysis and confirmed by cDNA cloning suggests that this protein family is incomplete and point to the existence of two new isoforms of ACE that from now on are denominated Variant-3 (Var-3) and Variant-4 (Var-4), located within the same ACE locus. In the present work we simultaneously analyzed the expression pattern of the 4 ACE gene variants in 30 different tissues of rats. The variant 4, whose mechanism of action remains unknown and it is being presently investigated in our laboratory is mainly expressed in testis and in relatively low quantity in left ventricle. Using in situ hybridization technique in testis, we verified that positive labeling of Var-4 is distinct from Var-2, suggesting that they may play distinct functions during the spermatogenesis process. Taking together, we provide direct evidence that the ACE gene locus contain, 4 variants instead of 2 and they show a specific cell tissue pattern of expression. Mostly important, the Var-4 is primarily expressed in testis and the data suggest that it may be involved with spermatogenesis control, and in cardiac processes presently unknown
Hummel, Václav. "Framework pro hardwarovou akceleraci 400Gb sítí". Master's thesis, Vysoké učení technické v Brně. Fakulta informačních technologií, 2017. http://www.nusl.cz/ntk/nusl-363862.
Pełny tekst źródłaPreciados, Mark. "Exposure to Estrogenic Endocrine Disrupting Chemicals and Brain Health". FIU Digital Commons, 2018. https://digitalcommons.fiu.edu/etd/3741.
Pełny tekst źródłaHunzeker, John T. "Differential effects of stress on the immune response to influenza A/PR8 virus infection in mice". Connect to this title online, 2004. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1080588837.
Pełny tekst źródłaTitle from first page of PDF file. Document formatted into pages; contains xvi, 231 p.; also includes graphics Includes bibliographical references (p. 211-231). Available online via OhioLINK's ETD Center
Hýbl, Matouš. "Dvoukanálový kontrolér krokových motorů". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2021. http://www.nusl.cz/ntk/nusl-442448.
Pełny tekst źródłaLiang, Kai-Min, i 梁凱閔. "Fast Booting on PCM-based Hybrid Main Memory". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/67136106489294152631.
Pełny tekst źródłaLu, Min-Zhong, i 呂敏中. "Row Buffer Management Policies in PCM Main Memory Systems". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/19824215718227175522.
Pełny tekst źródła國立臺灣大學
資訊工程學研究所
100
As Moore’s Law continues to hold true, the number of concurrently running applications has been increasing, and the capacity requirement of main memory has been much aggravated. For recent years, researchers have been studying new memory technologies that are envisioned to provide more memory capacity and lower power than the conventional DRAM. Among them, phase-change memory (PCM) has been considered as the best candidate to replace DRAM as main memory due to its non-volatility, byte-addressability, and superior scalability. Nevertheless, there have still been a number of drawbacks of PCM that need to be addressed in order to enjoy the full benefit of it. For example, the write latency of PCM is much longer than that of DRAM, which often poses as a performance bottleneck for PCM-based main memory system. In this thesis, I extend one previous work that proposed the multiple narrow row buffer organization for PCM, which was reported to be effective in mitigating the relatively poor performance of PCM; I propose two row buffer management policies and two intra-bank parallelism schemes to exploit the full potential of such organization. Simulation shows that the proposed row buffer management policies bring an average of 2.27% and a maximum of 2.51% performance improvement, and that the proposed intra-bank parallelism schemes bring a maximum of additional 67.5% performance improvement for memory intensive workloads. Moreover, intra-bank parallelism schemes are observed to provide a maximum of 12% performance improvement for less memory intensive workloads.
Wu, Xiaojian. "Storage Systems for Non-volatile Memory Devices". Thesis, 2011. http://hdl.handle.net/1969.1/ETD-TAMU-2011-08-9985.
Pełny tekst źródłaChang, Kuo-Lun, i 張國倫. "A Dynamic MLC/SLC Configuration for PCM in Main Memory System". Thesis, 2019. http://ndltd.ncl.edu.tw/handle/m7y666.
Pełny tekst źródła國立臺灣科技大學
電子工程系
107
In storage systems, non-volatile memory has become a popular technique in these years. The properties of non-volatile memory contain small size, low-power consumption and non-volatility. There are many types of non-volatile memory now. Phase change memory (PCM) is one of the most potential one among them. PCM is also considered as a candidate to replace DRAM in main memory. Compared to DRAM, it has the advantages of non-volatility and higher storage density. We can take advantage from the property of higher storage density by applying PCM in MLC format. However, MLC PCM has longer access time than SLC PCM. We need to have a trade-off method between capacity and speed. To make PCM a better candidate for main memory, we propose a dynamic MLC/SLC configuration for PCM in main memory system. According to the experimental results, we can show the performance and endurance improvement of the proposed method.
Cheng, Pi-Chieh, i 鄭比傑. "Adaptive Page Allocation and Buffer Management of DRAM-PCM Hybrid Memory Architecture". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/10109605237811085581.
Pełny tekst źródła中原大學
資訊工程研究所
103
Owing to the advantages of non-volatility and low static energy consumption, Phase Change Random Access Memory (PCM or PCRAM) can become the mainstream memory device. However, it is a little bit of difficult that the PCM limited by endurance, high write-in power requirement and access latency want to replace Dynamic Random Access Memory (DRAM). Therefore, to obtain better performance, the development of memory device would tend to be built in the form of DRAM-PCM Hybrid Main Memory architecture. The configuration of the total device will be allocated by the front-end DRAM and the back-end PCM. The DRAM and the PCM are served as a flash memory and main memory, respectively. But, the hybrid device using small capacity DRAM cache will cause the higher miss rate in data access. In addition, the PCM part will increase the frequency of data access. Then, the hybrid device will show low efficiency and leakage power consumption. In this thesis, we will propose the adaptability page and buffering mechanism of DRAM-PCM Hybrid Memory architecture. While in the combing different chips, the difference of read-write feature, access latency, and access power consumption features between the hybrid chips would take into consideration and conduct Page Allocation Algorithm to adjust the capacity for the different Task to improve DRAM cache efficiency. According to the experiment results, our method can improve the efficiency of DRAM-PCM Hybrid Memory device and prolong its lifetime.
Garg, Vishesh. "Towards Designing PCM-Conscious Database Systems". Thesis, 2016. https://etd.iisc.ac.in/handle/2005/4889.
Pełny tekst źródłaDas, Chandasree. "Investigations On Certain Tellurium Based Bulk Chalcogenide Glasses And Amorphous Chalcogenide Films Having Phase Change Memory (PCM) Applications". Thesis, 2011. https://etd.iisc.ac.in/handle/2005/2378.
Pełny tekst źródłaDas, Chandasree. "Investigations On Certain Tellurium Based Bulk Chalcogenide Glasses And Amorphous Chalcogenide Films Having Phase Change Memory (PCM) Applications". Thesis, 2011. http://etd.iisc.ernet.in/handle/2005/2378.
Pełny tekst źródłaΝάκος, Κωνσταντίνος. "Διόρθωση λαθών σε συστήματα αποθήκευσης πληροφορίας τεχνολογίας PCM με χρήση κώδικα BCH". Thesis, 2013. http://hdl.handle.net/10889/6113.
Pełny tekst źródłaThe objective of this thesis is the study and analysis of BCH error-correction methods that can be applied on PCM (Phase-Change Memory) storage devices. PCM is a new technology that promises high capacities, low power consumption and can be applied either on Solid State Drives or on Random Access Memories, providing an alternative to flash and DRAM memories. However, PCM suffers from limited write endurance, which can be increased using error-correction schemes that will extend the lifetime of the device when, due to medium wear-out, errors start to appear in the written data. Thus, BCH codes (powerful cyclic random multiple error-correcting codes) can be employed. BCH codes are ideal for ECC (Error-Correction Coding) in storage devices, due to their fault model which is random noise. Several algorithms have been proposed for the efficient coding and decoding BCH codes. In the present thesis parallel implementations where studied. For the decoding process in particular, a parallel algorithm was used that does not require finite field inverter units to solve the syndrome equations, achieving high operation frequencies. For the understanding of BCH coding and decoding processes, basic knowledge of the finite field algebra and arithmetic is required. BCH codes offer advantages such as low complexity and efficient hardware implementations. In the present thesis a parallel BCH(728,688) encoder and a parallel BCH(728,688) decoder were designed. The above systems were implemented as peripherals on an MicroBlaze-based embedded system, with emphasis on an optimal tradeoff between area and power consumption. A Virtex-6 FPGA device was used for the final stages of the implementation.
Προδρομάκης, Αντώνιος. "Μοντελοποίηση και εξομοίωση των χαρακτηριστικών γήρανσης NV μνημών". Thesis, 2015. http://hdl.handle.net/10889/8815.
Pełny tekst źródłaOver the last few years, non-volatle memory (NVM) has shown a great potential in replacing volatile memory, like DRAM in caching applications, and magnetic HDDs in storage applications. NAND Flash-based solid state drives (SSDs) have already emerged as a low-cost, high-performance and reliable storage medium for both commercial and enterprise storage systems. Additionally, the properties of phase-change materials and the recent scaling of Phase-Change Memory (PCM) has made it a perfect candidate for developing phase-change random access memories (PCRAMs). The rapid scaling of NVMs, with process nodes below 19nm, and the use of multi-level cell (MLC) technologies has increased their storage density and reduced the storage cost per bit. However, their lifetime capacity has not remained unaffected. Different interferences and noise sources along with aging effects have now a great impact on the reliability and endurance of these memory technologies, and hence, on the storage systems where these memories are used (SSDs, PCRAMs). Numerous techniques, such as wear-leveling, specialized error correcting codes (ECC) and precoding techniques have been employed to compensate these effects, while others, more complex but also more efficient, like dynamic adaptation of read reference thresholds, are at an experimental level. The development of these techniques is based on experimental characterization of NVM cells and chips. Characterization is related with measuring bit error ratio (BER) and response time (read and write time) during the whole lifetime of a device, for various loading data patterns and timing scenarios. This process is performed using real NVM integrated chips, usually the engineering, pre-production parts, while more thorough testing at the system level is performed when production parts are available. This approach has two major drawbacks. On one hand it is a very time-consuming process, since the aging of an NVM may require a large number of program/erase (P/E) cycles to be performed for each experiment, ranging from tens of thousands (NAND Flash) to millions (PCM) program cycles. On the other hand, the aging characteristics of an NVM are proportionally dependent on the number of the performed P/E cycles, thus making it impossible to conduct different or successive experiments at the same aging state of a memory chip. In this work, we present a model that accurately represents the aging process of an NVM cell, by treating it as a time-variant communications channel, based on an asymmetric n-PAM model. We present the architecture of a flexible FPGA-based platform, designed for accurate emulations of NVM technologies, focusing mainly on MLC NAND Flash technologies. Accuracy is measured in reference to experimentally specified bit error probabilities for various aging conditions (ie. the number of P/E cycles applied to a NAND Flash chip), usually for random data patterns. The hardware platform presented in this work is based on a reconfigurable hardware-software architecture, which enables the accurate emulation of new and emerging models and technologies of NVMs. The developed platform can be a valuable tool for the evaluation of memory-related algorithms, signal processing and coding techniques.
Sreevidya, Varma G. "Mechanical, Structural, Thermal and Electrical Studies on Indium and Silver Doped Ge-Te Glasses having Possible PCM Applications". Thesis, 2014. http://etd.iisc.ac.in/handle/2005/3080.
Pełny tekst źródłaSreevidya, Varma G. "Mechanical, Structural, Thermal and Electrical Studies on Indium and Silver Doped Ge-Te Glasses having Possible PCM Applications". Thesis, 2014. http://hdl.handle.net/2005/3080.
Pełny tekst źródłaLiao, Chien-Mao, i 廖建茂. "PCA Based Control Charts with Memory Effect for Process Monitoring". Thesis, 2000. http://ndltd.ncl.edu.tw/handle/70646533593825170230.
Pełny tekst źródła中原大學
化學工程學系
88
A general learning methodology based on PCA (Principal component analysis) control charts with memory effect for steady-state and dynamic process monitoring is proposed. PCA is currently a standard multivariate statistical technique. It has been applied to a lot of monitoring problems in chemical processes. However, the PCA model cannot explain the trend relationship among the measured variables with a small or a moderate shift in one or more process variables because it is built only based on the most recent observations. On the other hand, multivariate control charts, like MEWMA, MCUSUM, and SSUM etc, use additional information from the past history of the process, so the models possess the memory effect of the process behavior trend. Naturally, combining the PCA model with the above methods is a logical extension of the standard PCA model. In steady-state process monitoring, the combination method is developed and compared with the traditional PCA in terms of the mathematical definitions. In dynamic process monitoring, a technique combined with the neural network and PCA is proposed. The neural network is used to model the nonlinear dynamic system. The actual behavior of the process to be supervised is compared with that of a nominal fault-free neural network model driven by the same observations. The PCA based control charts evaluate the multivariable residuals driven from the differences between these outputs. This shows how static PCA can be applied on the dynamic system. The complementary of the proposed method not only leads to some cross-fertilization between various techniques but also results in a better model. Finally, the effectiveness of the proposed method for steady-state and dynamic process monitoring is demonstrated through the simulated Tennessee Eastman process problem and real industrial case studies - a melting process in a glaze industry and surface quality in a stainless steel slab to indicate the potential applications.
Wang, Xue-Fen, i 王雪芬. "Preparation of Shape Memory OBC/PCL Melt-Blends and Nanocomposites". Thesis, 2014. http://ndltd.ncl.edu.tw/handle/jm76nq.
Pełny tekst źródła國立宜蘭大學
化學工程與材料工程學系碩士班
102
Olefin block copolymer (OBC) and polycaprolactone (PCL) were melt-blended to form green shape memory blends. The shape memory behaviors of OBC/PCL blends were investigated at 60/40 proportions. Due to the lack of good compatibility between OBC and PCL, OBC-g-GMA (Glycidyl Methacrylate, GMA) and dicumyl peroxide (DCP) were added to improve the compatibility. In addition, ZnO with different aspect ratios were added to investigate their shape memory effect. The SEM technique confirmed the improved compatibility between OBC and PCL after modification. The crystallization temperatures of OBC/PCL blends with modification slightly increased, but the melting temperatures were not varied much. Viscosity of OBC/PCL-D (peroxide modified) and OBC/OBC-g-GMA/PCL-D blends was higher than that of OBC/PCL and OBC/OBC-g-GMA/PCL blends. XRD (X-Ray Diffractometer) confirmed the crystal structure of hexagonal wurtzite ZnO. TGA showed that thermal stability of OBC/PCL blends increased 35.4 oC with the addition of ZnO. From UV (UV-visible absorption spectra) measurement, ZnO-filled OBC/PCL blends exhibited high UV absorption capability. For the shape memory test, OBC/OBC-g-GMA/PCL-D blends exhibited better shape memory effect in comparison with the unmodified blends at the predeformation temperature of 65 oC. Its’ shape fixing ratio (Rf) and the shape recovery ratio (Rr) were up to 96.7 % and 95.7 %, respectively. In recovery stress, the recovery stress peak temperature basically corresponded to the predeformation temperature, suggesting a unique “memory” effect. Through the stress relaxation process for holding 10 minutes before cooling the samples, Rf of OBC/PCL blends without DCP modification was improved, up to 96.9 %. With new pre-cycle training processes at different temperatures, Rr of OBC/PCL blends with or without modification reached 100 % even after three shape memory cycles. Finally, Rf of OBC/PCL blends with the addition of ZnO was higher than OBC/PCL blends without ZnO.
Lai, Ting-Yin, i 賴亭茵. "Preparation of ZnO Nanorods and Shape Memory OBC/PCL/Silicone Blends". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/brs25c.
Pełny tekst źródła國立宜蘭大學
化學工程與材料工程學系碩士班
103
Zinc oxide synthesized with two different sol-gol methods. Firstly, put zinc nitrate solution (Zn(NO3)2), PEG-b-PPG-b-PEG (poly(ethylene glycol)-block-poly(propylene glycol)-block-poly(ethylene glycol)) and NH3OH (ammonium hydroxide solution) into a 250 mL beaker, heated to 65 oC until 1/3 solution left. Vigorous stirring was maintained throughout the entire process, and then calcinating the white powder at 600 oC. Secondly, zinc nitrate aqueous solution (Zn(NO3)2) and sodium hydroxide aqueous solution (NaOH) were added into alcohol, and then ethylenediamine (EDTA) was added. After the solution stirred, put into a sonication bath at room temperature for 60 minutes. The solution was dried onder ambient conditions, then washed with water and alcohol, and dried in the air. The morphology of the ZnO was bundle of needle shape. The OBC (olefin block copolymer) was mixed with DCP (dicumyl peroxide), PCL (polycaprolactone), and silicone rubber to form OBC/PCL/silicone blends at 135 oC. The system of OBC/PCL/silicone was fixed at 60/40/20, and the ratio of the reagent A and reagent B of silicone was chosen as 20:1, as the degree of crosslinking and gel content were the most uniform and reproducible. FT-IR curves proved that after silicone added as useful. From the result of SEM (Scanning electron microscope), the etched OBC/PCL/silicone revealed the OBC/PCL domains. The result of DSC (Differential scanning calorimetry) indicated that when the degree of crosslinking increased, the degree of crystallization decreased. The results of DMA (Dynamic mechanical analysis) showed that the Tg of OBC/PCL/silicone 60/40/20 and OBC/PCL 60/40 was -59.2 oC and -49.8 oC, respectively, indicating an increased low temperature flexibility for silicone-filled system. The results of the recovery fixity (Rf) and recovery ratio (Rr) showed limited difference between OBC/PCL 60/40 and OBC/PCL/silicone 60/40/20. The results of TGA (Thermogravimetric analyzer) analysis indicated a significant increase in the thermal stability for silicone-filled system.
Lian, Shiang-Lin, i 連翔琳. "Supramolecular block copolymers: PCBM composite for resistor-type memory device application". Thesis, 2011. http://ndltd.ncl.edu.tw/handle/24924311650508728230.
Pełny tekst źródła國立臺灣大學
化學工程學研究所
99
Recently years, polymeric materials use to the memory device applications as an emerging area. The donor-acceptor type polymers have attracted a significant interest for memory device applications due to their tunable electronic properties through molecular design. However, the effects of the different polymer structure on the pure polymer memory characteristics and the application of functional block copolymer composites being used to disperse and control fullerene domain size through specified physical interaction on the nanomaterials composite memory characteristics have not yet been explored. In this thesis, we explore fluorene-based conjugated rod-coil block copolymer and thiophene-containing side-chain polymers with the different block ratio effect of pure copolymer and nanocomposites on resistive type memory device application. In the first part of this thesis (chapter 2), the optoelectronic, morphology and the memory device properties of diblock (with two different ratio 10/37, 10/68) and triblock (with the ratio41/40/41) poly[2,7-(9,9-dihexylfluorene)](PF)-block-poly(2-vinylpyridine)(P2VP) copolymers are reported. The pure copolymer PF10-b-P2VP37, PF10-b-P2VP68 and P2VP41-b-PF40-b-P2VP41 device exhibit SRAM, SRAM, and DRAM characteristic, respectively. The three pure polymers device exhibit high ON/OFF ratio (107) and threshold voltage about -4V. The switching effect is based on the fluorene moieties transport ability with coexisting P2VP as the charge trap sites. The electric volatile is attributed to the back transferring of shallow trap depth. For the composite system, the varied PCBM content of PCBM: PF-b-P2VP composite device exhibit volatile memory behavior, WORM, or conductor behaviors. The optical absorption and photoluminescence indicated the charge transfer between copolymer and PCBM, which lead to memory characteristics. However, the non-volatile type memory characteristic is associated with the high electron affinity of PCBM. We also compare the memory behavior with different block length and the difference between diblock and triblock copolymer. In the case of PCBM: diblock copolymer composite, by loading less content of PCBM in PF10-b-P2VP68 matrix could achieve the memory performances which need loading more PCBM content for PF10-b-P2VP37. This results is due to the longer P2VP block length of PF10-b-P2VP68, it probably attract more amount PCBM approach copolymer, thus, the distance of isolated domain size in the electrical connected channel between two electrodes is decrease. The morphology and the photoluminescence quenching relativity of these two diblock composites also agree with this result. In addition, the triblock: PCBM composite devices have significant lower threshold voltage than diblock: PCBM composite. It is due to the P2VP41-b-PF40-b-P2VP41 have higher π-π interchain stacking and stack together favorably leading the charge transfer between P2VP41-b-PF40-b-P2VP41 and PCBM is probably easier than diblock composite. This study indicate that the device electrical characteristic could be tune by varied the loading PCBM content or the design of copolymer architecture. In the second part of this thesis (chapter 3), supramolecular composite thin films of thiophene-containing side-chain polymers PT-b-P2VP: [6,6]-Phenyl-C61-Butyric Acid Methyl Ester (PCBM) were prepare for memory device. The optical absorption and photoluminescence results indicate that the formation charge transfer between PT-b-P2VP and PCBM. The memory device exhibited the WORM type characteristics with threshold voltage -4 ~ -4.6 and ON/OFF ratio 103 ~105. The switching behavior can be explained by the charge injection dominated thermal emission for OFF state and the field induced charge transport in the ON state. This study provide the novel nanomaterials memory device application through the physical interaction between functional block copolymer and fullerene controlling domain size.