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Gotowa bibliografia na temat „Passivated contact”

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Data publikacji: 25 maja 2024

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Artykuły w czasopismach na temat "Passivated contact"

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Ullah, Hayat, Stanislaw Czapp, Seweryn Szultka, Hanan Tariq, Usama Bin Qasim i Hassan Imran. "Crystalline Silicon (c-Si)-Based Tunnel Oxide Passivated Contact (TOPCon) Solar Cells: A Review". Energies 16, nr 2 (7.01.2023): 715. http://dx.doi.org/10.3390/en16020715.

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Contact selectivity is a key parameter for enhancing and improving the power conversion efficiency (PCE) of crystalline silicon (c-Si)-based solar cells. Carrier selective contacts (CSC) are the key technology which has the potential to achieve a higher PCE for c-Si-based solar cells closer to their theoretical efficiency limit. A recent and state-of-the-art approach in this domain is the tunnel oxide passivated contact (TOPCon) approach, which is completely different from the existing classical heterojunction solar cells. The main and core element of this contact is the tunnel oxide, and its main role is to cut back the minority carrier recombination at the interface. A state-of-the-art n-type c-Si-based TOPCon solar cell featuring a passivated rear contact was experimentally analyzed, and the highest PCE record of ~25.7% was achieved. It has a high fill factor (FF) of ~83.3%. These reported results prove that the highest efficiency potential is that of the passivated full area rear contact structures and it is more efficient than that of the partial rear contact (PRC) structures. In this paper, a review is presented which considers the key characteristics of TOPCon solar cells, i.e., minority carrier recombination, contact resistance, and surface passivation. Additionally, practical challenges and key issues related to TOPCon solar cells are also highlighted. Finally, the focus turns to the characteristics of TOPCon solar cells, which offer an improved and better understanding of doping layers and tunnel oxide along with their mutual and combined effect on the overall performance of TOPCon solar cells.
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Edzards, Frank, Lukas Hauertmann, Iris Abt, Chris Gooch, Björn Lehnert, Xiang Liu, Susanne Mertens, David C. Radford, Oliver Schulz i Michael Willers. "Surface Characterization of P-Type Point Contact Germanium Detectors". Particles 4, nr 4 (20.10.2021): 489–511. http://dx.doi.org/10.3390/particles4040036.

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P-type point contact (PPC) germanium detectors are used in rare event and low-background searches, including neutrinoless double beta (0νββ) decay, low-energy nuclear recoils, and coherent elastic neutrino-nucleus scattering. The detectors feature an excellent energy resolution, low detection thresholds down to the sub-keV range, and enhanced background rejection capabilities. However, due to their large passivated surface, separating the signal readout contact from the bias voltage electrode, PPC detectors are susceptible to surface effects such as charge build-up. A profound understanding of their response to surface events is essential. In this work, the response of a PPC detector to alpha and beta particles hitting the passivated surface was investigated in a multi-purpose scanning test stand. It is shown that the passivated surface can accumulate charges resulting in a radial-dependent degradation of the observed event energy. In addition, it is demonstrated that the pulse shapes of surface alpha events show characteristic features which can be used to discriminate against these events.
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Bruynzeel, D. P., G. Hennipman i W. G. van Ketel. "Irritant contact dermatitis and chrome-passivated metal". Contact Dermatitis 19, nr 3 (wrzesień 1988): 175–79. http://dx.doi.org/10.1111/j.1600-0536.1988.tb02889.x.

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Chaudhary, Aditya, Jan Hos, Jan Lossen, Frank Huster, Radovan Kopecek, Rene van Swaaij i Miro Zeman. "Screen Printed Fire-Through Contact Formation for Polysilicon-Passivated Contacts and Phosphorus-Diffused Contacts". IEEE Journal of Photovoltaics 12, nr 2 (marzec 2022): 462–68. http://dx.doi.org/10.1109/jphotov.2022.3142135.

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Chembath, Manju, J. N. Balaraju i M. Sujata. "In Vitro Corrosion Studies of Surface Modified NiTi Alloy for Biomedical Applications". Advances in Biomaterials 2014 (20.11.2014): 1–13. http://dx.doi.org/10.1155/2014/697491.

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Electropolishing was conducted on NiTi alloy of composition 49.1 Ti-50.9 Ni at.% under potentiostatic regime at ambient temperature using perchloric acid based electrolyte for 30 sec followed by passivation treatment in an inorganic electrolyte. The corrosion resistance and biocompatibility of the electropolished and passivated alloys were evaluated and compared with mechanically polished alloy. Various characterization techniques like scanning electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy were employed to analyze the properties of surface modified and mechanically polished alloys. Water contact angle measurements made on the passivated alloy after electropolishing showed a contact angle of 35.6°, which was about 58% lower compared to mechanically polished sample, implying more hydrophilicity. The electrochemical impedance studies showed that, for the passivated alloy, threefold increase in the barrier layer resistance was obtained when compared to electropolished alloy due to the formation of compact titanium oxide. The oxide layer thickness of the passivated samples was almost 18 times higher than electropolished samples. After 14 days immersion in Hanks’ solution, the amount of nickel released was 315 ppb which was nearly half of that obtained for mechanically polished NiTi alloy, confirming better stability of the passive layer.
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Fellmeth, Tobias, Frank Feldmann, Bernd Steinhauser, Henning Nagel, Sebastian Mack, Martin Hermle, Frank Torregrosa i in. "A round Robin-Highliting on the passivating contact technology". EPJ Photovoltaics 12 (2021): 12. http://dx.doi.org/10.1051/epjpv/2021011.

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The aim of this work is to demonstrate the maturity of the TOPCon technology by conducting a round-robin on symmetrically processed lifetime samples in the leading European PV institutes EPFL, ISC, CEA-INES, ISFH, IMEC and Fraunhofer ISE within the H2020 funded project called HighLite. For all layers, dark saturation current-densities ranging between 2 and 10 fA/cm2 can be reported. Simultaneously, no metal induced recombination for the two lower sintering temperatures have been observed pointing towards a true passivated contact. Furthermore, contact resistivities below 10 mΩcm2 have been achieved. It seems that the industrial passivating contact matured to a fully passivated and conducting contact enabling full efficiency potential. The fact that this can be realized using either PECVD or LPCVD from various manufacturer is expected to drive costs down and contribute to the increased adoption of the TOPCon technology.
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Ditshego, Nonofo M. J., i Suhana Mohamed Sultan. "Top-Down Fabrication Process of ZnO NWFETs". Journal of Nano Research 57 (kwiecień 2019): 77–92. http://dx.doi.org/10.4028/www.scientific.net/jnanor.57.77.

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ZnO NWFETs were fabricated with and without Al2O3passivation. This was done by developing a new recipe for depositing the thin film of ZnO. By using a high donor concentration of 1.7 x 1018cm-3for the thin film, contact resistance values were lowered (passivated device had Rcon= 2.5 x 104Ω; unpassivated device had Rcon= 3.0 x 105Ω). By depositing Zn first instead of O2, steep subthreshold slopes were obtained. The passivated device had a subthreshold slope of 225 mV/decade and the unpassivated device had a slope of 125 mV/decade. Well-behaved electrical characteristics have been obtained and the passivated device shows field effect mobility of 10.9 cm2/Vs and the un-passivated device shows a value of 31.4 cm2/Vs. To verify the results, 3D simulation was also carried out which shows that the obtained values of sub-threshold slope translate into interface state number densities of-1.86 x 1013cm-2for the unpassivated device and 3.35 x 1014cm-2for the passivated device. The passivated device is suitable for biosensing applications.
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Kashyap, Savita, Nikhil Shrivastav, Rahul Pandey, Jaya Madan i Rajnish Sharma. "Double POLO Carrier Selective Contact Based PERC Solar Cell for 25.5% Conversion Efficiency: A Simulation Study". ECS Transactions 107, nr 1 (24.04.2022): 6365–70. http://dx.doi.org/10.1149/10701.6365ecst.

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Polycrystalline Silicon on Oxide (POLO) passivating contacts have emerged as a carrier selective contact for high-efficiency Si-based photovoltaic (PV) devices. In this paper, double POLO PERC (Passivated Emitter and Rear Contact) device is designed by employing POLO contacts on both contact sides to reduce the contact recombination losses through Silvaco-TCAD tool. The performance of the double POLO PERC device has been studied by using the PV parameters and current-density (J-V) curve. The impact of tunnel oxide thickness variation (1 nm, 1.25 nm, 1.5 nm) in the tunnel oxide layer is also analyzed. The performance of textured double POLO PERC solar cell is optimized at 1.5 nm thickness (TOX), which reflects optimum conversion efficiency of 25.5%. Reported study of double POLO PERC device may open up a door for further improvement in PERC device performance.
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Mitra, Suchismita, Hemanta Ghosh, Hiranmay Saha i Kunal Ghosh. "Recombination Analysis of Tunnel Oxide Passivated Contact Solar Cells". IEEE Transactions on Electron Devices 66, nr 3 (marzec 2019): 1368–76. http://dx.doi.org/10.1109/ted.2018.2890584.

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Almeida, E., M. R. Costa, N. De Cristofaro, N. Mora, R. Catalá, J. M. Puente i J. M. Bastidas. "Titanium passivated lacquered tinplate cans in contact with foods". Corrosion Engineering, Science and Technology 40, nr 2 (czerwiec 2005): 158–64. http://dx.doi.org/10.1179/174327805x29859.

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Rozprawy doktorskie na temat "Passivated contact"

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Urrejola, Elias [Verfasser]. "Aluminum-Silicon Contact Formation Through Narrow Dielectric Openings : Application To Industrial High Efficiency Rear Passivated Solar Cells / Elias Urrejola". Konstanz : Bibliothek der Universität Konstanz, 2012. http://d-nb.info/1023660032/34.

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Mohamed, Gad Karim [Verfasser], i Leonhard M. [Akademischer Betreuer] Reindl. "Functional nanolayers for passivated carrier-selective contacts on crystalline silicon". Freiburg : Universität, 2016. http://d-nb.info/112590528X/34.

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Spisni, Giacomo. "Spettroscopia di fototensione superficiale di celle solari in Si con firing passivated contacts". Bachelor's thesis, Alma Mater Studiorum - Università di Bologna, 2019. http://amslaurea.unibo.it/18720/.

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La ricerca nel settore dell’energia fotovoltaica sta portando ad un continuo aumento dell’efficienza delle celle solari. Per raggiungere rendimenti sempre più alti è fondamentale ridurre la perdita di cariche foto-generate, solitamente causata da difetti presenti nel reticolo cristallino o sulle superfici e alle interfacce dei materiali. Tramite la tecnica dei contatti passivanti è possibile rendere inattivi i processi di ricombinazione delle cariche foto-generate. I firing passivated contacts, oggetto di studio in questa tesi, sono un particolare tipo di contatto passivante ottenuto tramite un processo in fase di studio presso il Photovoltaic laboratory (PV-LAB) presso l’Ecole Polytechnique Fédérale de Lausanne (EPFL). Per ottimizzare il processo di fabbricazione, il PV-LAB ha realizzato diversi campioni di materiale semiconduttore con firing passivated contacts. Questi campioni sono stati analizzati in laboratorio tramite la tecnica della surface photovoltage spectroscopy, la quale consiste nella misura della foto-tensione di superficie in uno specifico intervallo di energie. Le misure svolte erano finalizzate a determinare le transizioni elettroniche, indotte dalla luce incidente, che corrispondevano a specifiche caratteristiche del diagramma a bande della struttura, e la struttura del diagramma a bande del campione, non ancora completamente nota. In particolare, si sono analizzate le transizioni energetiche nell’intervallo 0.8-1.1eV. L’attività di laboratorio ha permesso di osservare due diverse transizioni energetiche, comuni a tutti i campioni analizzati. Per mezzo di queste informazioni, e di numerose altre analisi svolte dal PV-LAB, sarà possibile approfondire la conoscenza teorica dei firing passivated contacts, permettendone l’impiego nelle celle solari future ad alta efficienza.
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Hayes, Maxim. "Intégration de collecteurs de charges avancés dans les cellules solaires bifaciales à haut rendement : vers un procédé générique pour les nouveaux matériaux silicium". Electronic Thesis or Diss., Aix-Marseille, 2020. http://www.theses.fr/2020AIXM0519.

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L'industrie PV connaît un fort engouement pour les cellules PERC. Néanmoins leurs performances sont limitées par deux sources de recombinaison des porteurs de charge: au niveau de l'émetteur obtenu par diffusion de P, et en face arrière aux interfaces Al-Si. L'objectif principal de cette thèse vise à limiter ces pertes en intégrant deux nouveaux collecteurs. Le premier est un émetteur sélectif (ES) obtenu par implantation ionique à immersion plasma (PIII) de P. Le second concerne un contact passivé (CP) constitué d'un film de silicium polycristallin (poly-Si) dopé au B sur un oxyde mince. Dans un second temps, les travaux s'intéressent à la compatibilité entre ces collecteurs et les plaquettes de Si issues de lingots fabriqués par solidification dirigée. Un procédé de masquage in situ des implantations PIII a permis d'élaborer des ES avec une bonne maîtrise de la géométrie du motif et des niveaux de dopage. Ensuite, un éventail de techniques pour la métallisation du poly-Si(B) a été étudié. La voie de métallisation par sérigraphie de pâtes traversantes est la plus encourageante à l'heure actuelle. Elle permet l'utilisation de couches hydrogénantes non sacrificielles qui ont mené à l'obtention de précurseurs de cellules avec un excellent niveau de passivation. Néanmoins, la résistance de contact entre le métal et le poly-Si(B) demeure à ce jour trop élevée pour une intégration optimale. Enfin, l'association de Si multicristallin avec différents CP a montré la propension de ces derniers à générer un effet getter externe efficace. Cela laisse envisager une très bonne compatibilité entre l'architecture cellule développée et les Si bas-coût et à faible emprunte carbone
Thanks to a relatively simple fabrication process and high conversion efficiency values the PERC structure is well established at the industrial level. Nevertheless, industrial PERC solar cells performances are mostly limited by two charge carrier recombination sources: P thermally diffused emitter on the front side and the Al-Si interfaces at the rear contacts. The main goal of this work aims at limiting both recombination sources. A selective emitter (SE) obtained by plasma immersion ion implantation (PIII) is developed for an integration on the front side; whereas a B-doped polysilicon (poly-Si) on oxide passivated contact (PC) is integrated on the back side. The second goal of this work consists in evaluating the compatibility between these advanced carrier collectors and directionally solidified Si materials. SE featuring good geometrical properties and a well-controlled doping were fabricated thanks to an in situ localized doping process obtained with a specific mask developed for PIII. Besides, several metal deposition technologies were investigated for the poly-Si(B). Fire-through screen-printing appears as the most promising approach so far. Indeed, the deposition of a non-sacrificial hydrogen-rich layer allowed to reach an excellent surface passivation level for solar cell precursors. However, the specific contact resistivity obtained remains too high for an optimal cell integration. Lastly, the fabrication of poly-Si PC showed excellent external gettering efficiencies for multicrystalline Si. Thus, the potential of the developed cell structure to be integrated with low-cost and low carbon footprint materials is encouraging
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Bruhat, Elise. "Développement de cellules photovoltaïques silicium à homojonction industrialisables à contacts passivés". Thesis, Lyon, 2019. http://www.theses.fr/2019LYSEI128.

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Afin de favoriser le déploiement des énergies renouvelables, le développement de cellules solaires moins chères mais aussi plus performantes reste un enjeu pour rendre l’électricité photovoltaïque encore plus attractive. Si les technologies des cellules solaires à base de silicium à homojonction dominent le marché mondial, les performances de ces structures peuvent encore être améliorées. En effet, le contact direct entre la grille métallique et les zones fortement surdopées est source de pertes par recombinaisons des porteurs de charges. L’émergence de de nouvelles structures de cellules émergent à contacts passivés permet des solutions alternatives face à cette limitation. Ces structures visent à délocaliser la prise de contact grâce à l’introduction de couches passivantes entre le substrat de silicium cristallin et la grille de métallisation, diminuant ainsi drastiquement les phénomènes de recombinaisons au sein des dispositifs. La technologie de contacts passivés la plus connue reste celle des cellules à hétérojonction de silicium a-Si:H/c-Si. Cette technologie mature reste pour l’instant limitée car elle représente un nouveau standard industriel mais aussi car elle n’est pas compatible avec les procédés utilisant des températures excédant 250°C. De plus, l’utilisation d’indium, matériau cher et dont la ressource est limitée, dans les couches d’Oxyde Transparent Conducteur (OTC) peut représenter un frein à l’industrialisation de masse du procédé. Il est alors nécessaire de développer de nouvelles technologies de contacts passivés, compatibles avec des procédés à haute température (supérieures à 800°C), et donc intégrables dans une ligne de production existante. Des approches utilisant des OTC en combinaison avec des couches ultraminces d’oxydes, des empilements diélectriques, et des jonctions poly-silicium sur oxyde ont été investiguées afin d’améliorer les performances des cellules à homojonction. Les couches intermédiaires d’OTC développées permettent potentiellement de diminuer les pertes résistives et et celles par recombinaison au niveau des contacts. Ces travaux de thèse se sont ainsi focalisés sur le développement de couches d’oxyde de zinc dopé à l’aluminium (AZO) par pulvérisation cathodique (PC) et Atomic Layer Deposition (ALD) pour les cellules solaires à contact passivés. Ces couches, utilisées seules ou en combinaison avec des matériaux diélectriques, ont été intégrées et testées sur des dispositifs photovoltaïques fonctionnels
For the deployment of renewable energies, the development of cheaper and more efficient solar cells remains an issue to make photovoltaic electricity even more attractive. While homojunction-based silicon solar cell technologies dominate the global market, the performances of these structures can be further improved. Indeed, the direct contact between the metal grid and the highly doped junction is a source of recombination losses. To overcome these limitations, new structures are emerging such as silicon-based passivated contacts solar cells. These structures aim at integrating of passivating layers between the crystalline silicon substrate and the metal grid, thus drastically reducing the recombination phenomena within the devices. Silicon heterojunction (a-Si:H/c-Si) cells remain the most well-known passivated contact technology. Nevertheless, this mature technology is still limited by its fabrication process which is far from the industrial standard, and is hardly compatible with temperatures exceeding 250 ° C. In addition, the use of expensive and potentially toxic indium in the Transparent Conductive Oxide (TCO) layers has restrained up to now the expansion towards mass industrialization of the process. Thus, it is necessary to develop new passivated contacts technologies compatible with high temperature (above 800°C), implementable in a standard production line. This study explores new paths for passivating contact technologies thanks to ultrathin layers of oxides or dielectrics/TCO stacks deposited on silicon homojunctions as well as poly-silicon on thin oxide junctions. In order to limit the resistive losses and potentially limit recombination losses in the contacted areas, intermediate TCO layers have been developed. In this perspective, this works aims at investigating the development of Aluminum Zinc Oxide (AZO) layers by both Magnetron Sputtering (MS) and Atomic Layer Deposition (ALD) for passivated contact solar cells. These layers, also used in combination with dielectric materials have been integrated and then tested in photovoltaic devices
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Römer, Udo [Verfasser]. "Polycrystalline silicon/monocrystalline silicon junctions and their application as passivated contacts for Si solar cells / Udo Römer". Hannover : Technische Informationsbibliothek (TIB), 2016. http://d-nb.info/1096360942/34.

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Marteau, Baptiste. "Intégration en dispositifs tandem des cellules PV à contactspassivés : vers une technologie d'interface multifonctionnelleet universelle". Electronic Thesis or Diss., Université Grenoble Alpes, 2023. http://www.theses.fr/2023GRALT096.

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Le marché des modules photovoltaïque est dominé par les technologies basées sur le silicium cristallin (c-Si). L'utilisation de contacts passivés fabriqués à basse température (SHJ) ou haute température (TOPCon) mène à des rendements records (26,8% et 26,2%) proches de la limite théorique de 29,4%. L'option privilégiée par la majorité des acteurs pour dépasser cette limite consiste à associer la technologie c-Si avec un autre matériau semi-conducteur à large bande interdite (EGap) pour permettre une conversion optimale du spectre solaire sur toute la gamme énergétique. L'efficacité maximale théorique de tels dispositifs tandem peut alors atteindre 42%. Il semble avantageux de privilégier une structure à deux terminaux pour simplifier la mise en module et réduire les coûts associés. Cependant, cela implique de fortes contraintes sur les couches d'interface situées entre les deux cellules. En effet, ces dernières doivent alors permettre l'obtention d'excellentes durées de vie des porteurs dans chaque cellule, tout en assurant des propriétés optiques (absorption et réflexion parasites minimales) et électriques (jonction de recombinaison (JR) efficace et peu résistive) optimales.Pour la cellule c-Si, cette thèse se concentre sur la technologie TOPCon qui devrait dominer le marché d'ici 2030. De plus cette approche basée sur des empilements poly-Si/SiOx permet de disposer d'une grande versatilité pour les procédés de fabrication du dispositif tandem (stabilité jusqu'à 800°C), et de bénéficier de couches fortement dopées adaptées à la formation de JR. Le choix de l'absorbeur à large EGap s'est porté sur la technologie pérovskite (Pk) qui semble faire l'unanimité car elle combine potentiellement de faibles coûts de production et de hauts rendements. L'interface entre les deux cellules (TOPCon et Pk) du dispositif tandem est habituellement réalisée avec des couches d'oxydes transparents conducteurs comme l'ITO (Oxyde d'Indium Etain), permettant l'obtention d'excellentes propriétés électriques et optiques. L'indium est cependant un matériau critique qui pourrait limiter le développement de cette technologie à long terme. L'objectif de cette thèse consiste ainsi à explorer des approches sans indium pour l'interface des cellules tandem Pk/c-Si.Les études réalisées dans ces travaux concernent des cellules tandem Pk/c-Si en configuration nip, pour lesquelles deux approches alternatives sont étudiées pour l'ingénierie d'interface. La première n'utilise aucune couche d'interface additionnelle, et la seconde intègre une couche nc-Si (n+) pour former une diode tunnel en silicium afin d'obtenir un courant de recombinaison optimal. Ces deux approches alternatives ont mené à l'obtention de meilleures performances initiales que le procédé de référence, principalement en s'affranchissant de la problématique de court-circuits dans la cellule Pk. Les dispositifs tandem fabriqués sans couche d'interface permettent d'obtenir des facteurs de forme comparables à ceux des meilleurs dispositifs mondiaux (> 81%) ainsi que des rendements proches de 25%, démontrant le potentiel des contacts passivés TOPCon pour la formation de JR sans ITO. Ces deux technologies d'interface sans indium se sont cependant révélées limitées par l'apparition au cours du temps de résistances séries internes. Des caractérisations avancées expliquent ces dégradations par l'apparition d'une couche de SiOx entre le silicium et le SnO2 (la couche sélective d'électron - ESL- de la cellule Pk).En conclusion, les contacts passivés TOPCon sont particulièrement adaptés à la formation de jonctions de recombinaison (directes ou par le biais de diode tunnel en silicium) permettant de s'affranchir d'indium dans les couches d'interconnexion. Le silicium étant particulièrement sensible à l'oxydation, le choix de la couche de contact (ESL en configuration nip) devrait se porter sur un matériau ne comportant pas d'oxygène ou présentant une affinité pour l'oxygène plus forte que le silicium
The photovoltaic module market is dominated by technologies based on crystalline silicon (c-Si). The use of low temperature (SHJ) or high temperature (TOPCon) passivated contacts leads to record efficiencies (26.8% and 26.2%) close to the theoretical limit of 29.4%. The option explored by the majority of institutes to overcome this limit is to combine c-Si technology with another wide bandgap (EGap) semiconductor material to enable optimum conversion of the solar spectrum over the entire energy range. The theoretical maximum efficiency of such tandem devices can then reach 42%. A two-terminal structure enables easiest module processing leading to reduced production costs. However, this places severe constraints on the interface layers between the two cells. These must provide excellent carrier lifetime in each cell, while ensuring optimal optical (minimal parasitic absorption and reflection) and electrical (efficient and highly conductive recombination junction RJ) properties.For the c-Si cell, this thesis focuses on TOPCon technology, which is expected to become market mainstream by 2030. This approach, based on poly-Si/SiOx stacks, offers great versatility for the tandem device fabrication processes (stability up to 800°C), and benefits from highly doped layers that are well suited for the formation of RJ. Among the variety of large EGap materials, perovskite (Pk) technology is the most popular solution as it benefits from both high efficiency potential and low production costs. The interface between the two cells (TOPCon and Pk) of the tandem device is usually formed by transparent conductive oxides layers such as ITO (Indium Tin Oxide), which shows excellent electrical and optical properties. However, indium is a critical material that could limit the long-term development of this technology. Therefore, the aim of this thesis is to explore indium-free approaches for the interface of Pk/c-Si tandem cells.The studies carried out in this work concern Pk/c-Si tandem cells in nip configuration, for which two alternative approaches for interface engineering are investigated. The first one uses no additional interface layer, while the second one integrates an nc-Si (n+) layer to form a silicon tunnel diode, which should provide an optimal recombination current. These two alternative approaches allowed better initial performances than the reference process, mainly by overcoming short-circuit issues in the Pk cell. Tandem devices featuring no additional interface layer show fill factors comparable to those of the world's best devices (>81%) and efficiencies close to 25%, confirming the potential of TOPCon passivated contacts to form indium-free RJ. However, these two indium-free approaches were limited by the appearance of internal series resistance over time. Advanced characterisations explain these degradations by the formation of a SiOx layer between silicon and SnO2 (the electron-selective layer - ESL- of the Pk cell).In conclusion, TOPCon passivated contacts are particularly well suited to obtain efficient recombination junctions (direct or via silicon tunnel diodes), thus eliminating the need to use indium in the interface layers. As silicon is particularly sensitive to oxidation, the choice of contacting layers (ESL in nip configuration) should be focused on a material that contains no oxygen or has a stronger affinity for oxygen than silicon
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Morisset, Audrey. "Integration of poly-Si/SiOx contacts in silicon solar cells : Optimization and understanding of conduction and passivation properties". Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLS443.

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Dans le contexte des cellules photovoltaïques (PV) à base de silicium cristallin (c-Si), le développement de structures de contacts dits « passivants », qui permettent de limiter les pertes par recombinaisons des porteurs de charge à l’interface entre le métal et le c-Si, est un des principaux leviers vers l’obtention de plus hauts rendements. Une approche de contacts passivés consiste à intégrer entre le métal et le c-Si une jonction composée d’une couche de silicium poly-cristallin (poly-Si) fortement dopée sur une mince couche d’oxyde de silicium (SiOx < 2 nm).Les objectifs de ce travail sont d’une part de développer une jonction poly-Si/SiOx compatible avec la fabrication industrielle des cellules PV, et d’autre part d’améliorer la compréhension des mécanismes de passivation et de transport des charges au niveau de la fine couche de SiOx située à l’interface entre le poly-Si et le c-Si.Dans ce travail, une jonction de poly-Si/SiOx dopée au bore a été développée, le dopage de la couche étant dans un premier temps réalisé in-situ pendant l’étape de dépôt chimique en phase vapeur assisté par plasma (PECVD) de la couche poly-Si. La méthode de dépôt PECVD est répandue dans l’industrie PV et permet la fabrication de la couche poly-Si d’un seul côté du substrat c-Si. Cependant, elle induit une forte concentration d’hydrogène dans la couche déposée, ce qui entraine la formation de cloques à l’interface avec le c-Si et tend à dégrader les propriétés de passivation de surface de la jonction après recuit de cristallisation. L’optimisation des conditions de dépôt (température de dépôt et ratio de gaz H2/SiH4) a permis d’obtenir des couches de poly-Si dopées in-situ intègres. Par la suite, une méthode de dopage alternative, par le biais du dépôt d’une couche diélectrique riche en bore sur le poly-Si, a été appliquée afin de réduire l’apport en hydrogène pendant le dépôt et d’obtenir des couches de poly-Si intègres plus épaisses. L’ajout d’une étape d’hydrogénation a permis d’obtenir des propriétés de passivation de surface au niveau de l’état de l’art pour les deux types de jonctions poly-Si/SiOx développées.A la suite du développement de la jonction poly-Si/SiOx, la caractérisation physico-chimique de la couche SiOx a été réalisée et a démontré une possible amélioration de la stœchiométrie de la couche vers SiO2 ainsi qu’une dégradation de son homogénéité en épaisseur sous l’effet du recuit de cristallisation à haute température. Ces phénomènes pourraient s’expliquer par une diffusion des atomes d’oxygène à l’interface. D’autre part, l’étude du transport des charges à travers le SiOx par C-AFM a mis en évidence les limites de cette technique quant à la détermination de nano-ouvertures au sein de la couche SiOx (qui favoriseraient le transport des charges). Enfin, une méthode de caractérisation des défauts recombinants à l’interface entre une jonction de poly-Si intrinsèque et le c-Si a été mise en œuvre. Cette méthode a permis de modéliser les recombinaisons à l’interface poly-Si/c-Si via deux défauts discrets apparents dont les niveaux d’énergie dans la bande interdite et les ratios de sections efficaces de capture des électrons et des trous ont été déterminés
In the context of high efficiency solar cells (SCs) based on crystalline silicon (c-Si), the development of "passivating" contact structures to limit the recombination of charge carriers at the interface between the metal electrode and the c-Si has been identified as the next step to further improve the photovoltaic (PV) conversion efficiency. Passivating contacts consisting of a highly doped poly-crystalline silicon layer (poly-Si) on top of a thin layer of silicon oxide (SiOx ≤ 2 nm) are particularly sparking interest as they already demonstrated promising conversion efficiency when integrated in SCs.The objectives of this work are to develop a poly-Si/SiOx passivating contact compatible with the industrial production of c-Si SCs, and to investigate the passivation and charge transport mechanisms in the region of the thin SiOx layer located at the interface between the poly-Si and the c-Si.In this work, a boron-doped poly-Si/SiOx contact was fabricated. The doping of the layer was first performed in-situ during the deposition of a hydrogen-rich amorphous silicon (a-Si:H) layer by plasma-enhanced chemical vapor deposition (PECVD). The PECVD step was followed by an annealing step for crystallization of the poly-Si layer. The PECVD presents the advantages of being widespread in the PV industry and enabling the fabrication of the poly-Si contact on a single side of the c-Si substrate. However, it induces a high concentration of hydrogen in the deposited layer, which causes the formation of blisters at the interface with the c-Si and tends to degrade the surface passivation properties of the contact after annealing for crystallization. The optimization of the deposition conditions (temperature and H2/SiH4 gas ratio) enabled to obtain blister-free in-situ doped poly Si layers. An alternative doping method consisting of the deposition of a boron-rich dielectric layer on top of the poly-Si layer was applied to reduce the hydrogen content of the deposited layer. This approach enabled to obtain thicker blister-free poly-Si layers. The diffusion of hydrogen in the contact after annealing is known to provide a further chemical passivation of the poly-Si/c-Si interface. In this work, the addition of a hydrogenation step enabled to obtain state-of-the-art surface passivation properties for the two types of poly Si/SiOx contact fabricated.After developing the poly-Si/SiOx contact, a study of the effect of the annealing step on the chemical and structural properties of the SiOx layer was performed. Results indicated a possible improvement of the stoichiometry of the layer towards SiO2 as well as a degradation of its homogeneity at the poly-Si/c-Si interface after annealing at high temperature. These phenomena could be explained by a diffusion of the oxygen atoms content in the interfacial SiOx layer. The transport mechanism of charge carriers through the SiOx layer was conducted by C-AFM. This study revealed the limits of this technique to determine the presence of pinholes within the SiOx layer (that would help the transport of charge carriers). Finally, a method for characterizing recombinant defects at the interface between an intrinsic poly-Si junction and the c-Si has been developed. This method enabled to model the recombination phenomena at the poly-Si/c-Si interface via two apparent discrete defects. Their associated energy levels in the bandgap and ratios of electron and hole capture cross sections were estimated
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Lai, Jiun-Hong. "Development of low-cost high-efficiency commercial-ready advanced silicon solar cells". Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/52234.

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The objective of the research in this thesis is to develop manufacturable high-efficiency silicon solar cells at low-cost through advanced cell design and technological innovations using industrially feasible processes and equipment on commercial grade Czochralski (Cz) large-area (239 cm2) silicon wafers. This is accomplished by reducing both the electrical and optical losses in solar cells through fundamental understanding, applied research and demonstrating the success by fabricating large-area commercial ready cells with much higher efficiency than the traditional Si cells. By developing and integrating multiple efficiency enhancement features, namely low-cost high sheet resistance homogeneous emitter, optimized surface passivation, optimized rear reflector, back line contacts, and improved screen-printing with narrow grid lines, 20.8% efficient screen-printed PERC (passivated emitter and rear cell) solar cells were achieved on commercial grade 239 cm2 p-type Cz silicon wafers.
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Deng, Yong-Zhong, i 鄧詠鐘. "New passivated contact technology development and application for Si-base photodetectors". Thesis, 2017. http://ndltd.ncl.edu.tw/handle/41469113204411747692.

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碩士
國立中央大學
材料科學與工程研究所
105
Compared with III-V photodetector, Silicon based photodetector has 10 to 100 times higher dark current, so decreasing dark current is an important topic. In the past, Silicon based component reduces the surface recombination rate through the passivation layer to achieve the purpose of reducing the dark current of the component. However, there is no passivation layer between the metal and semiconductor. In order to solve the above problems, A technology call ‘‘passivated contact’’ is proposed to reduce the carrier recombination between the metal and the semiconductor. This structure is inserted the ultra-thin passivation film between the metal and semiconductor, it can achieve a good passivation effect and the carrier can tunnel the passivation. Rencently, this structure is mostly used in solar cells, but the solar cell structure is similar to photodetector, so this propasal of this research is to investigate the passivated contact, and apply it to the silicon based photodetector to lower the dark current density. The ultra-thin oxide layer is the key to passivated contact, so this study first grows the oxide layer in different methods and discusses its properties, and then stacks the silicon nitride on the oxide layer to enhance the overall passivation effect. The experimental results show that Through RTA annealing interval of 200 degrees to 800 degrees to enhance the passivation properties, the passivated contact can measure the maximum lifetime is 1515us, iVoc is 650mV at 400 degrees. In order to enhance the carrier transport capacity of this structure, we use dry etching to reduce the thickness of silicon nitride from 80nm to 15nm. Finally, passivated contact is applied to the silicon-based photodetector. The experimental results show that the passivated contact of the silicon nitride and the oxide layer can reduce the dark current of the photodetector from 1.44x10-7 to 5.42x10-9 A, dark Current density of up to 1.93x10-5 mA/cm2. In addition, it was also investigated that indium tin oxide covered with this passivated contact structure and found that the component dark current was reduced to 5.36x10-9A, and the responsibility of 0.658 A / W at an operating bias of -5 V.
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Części książek na temat "Passivated contact"

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Tummala, Suresh Kumar, Phaneendra Babu Bobba i Satyanarayana Kosaraju. "Characterization of Bifacial Passivated Emitter and Rear Contact Solar Cell". W Lecture Notes in Electrical Engineering, 333–54. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-7794-6_14.

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Hermle, Martin. "Passivated Contacts". W Photovoltaic Solar Energy, 125–35. Chichester, UK: John Wiley & Sons, Ltd, 2017. http://dx.doi.org/10.1002/9781118927496.ch13.

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Sadhukhan, Sourav, Shiladitya Acharya, Tamalika Panda, Nabin Chandra Mandal, Sukanta Bose, Anupam Nandi, Gourab Das i in. "Evolution of high efficiency passivated emitter and rear contact (PERC) solar cells". W Sustainable Developments by Artificial Intelligence and Machine Learning for Renewable Energies, 63–129. Elsevier, 2022. http://dx.doi.org/10.1016/b978-0-323-91228-0.00007-0.

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Kassmi, Mounir. "Characterization of Hydrogenated Amorphous Silicon Using Infrared Spectroscopy and Ellipsometry Measurements". W Application and Characterization of Rubber Materials. IntechOpen, 2023. http://dx.doi.org/10.5772/intechopen.108021.

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We described the primary mixed compositions of hydrogenated amorphous silicon on the surface of glass (7059) in this chapter and distinguished them optically by combining the outcomes of infrared spectroscopy and ellipsometric tests. The particular hydrogen content of the aspherical voids created determines the energy level of the optical band, which ranges from 1 eV to 4 eV depending on how passivated or unpassivated the composition is. Additionally, the dielectric response is influenced by the size and proportion of the vacuum occupation relative to the surrounding phase, and each dielectric response is based on how much the implicated components have been passivated.
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Peng Ling, Zhi, Zheng Xin, Puqun Wang, Ranjani Sridharan, Cangming Ke i Rolf Stangl. "Double-Sided Passivated Contacts for Solar Cell Applications: An Industrially Viable Approach Toward 24% Efficient Large Area Silicon Solar Cells". W Silicon Materials. IntechOpen, 2019. http://dx.doi.org/10.5772/intechopen.85039.

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Streszczenia konferencji na temat "Passivated contact"

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Teo, Boon Heng, Ankit Khanna, Vinodh Shanmugam, Gabby Alonso De Luna, Rowel Vigare Tabajonda, Jennifer Jordan Epistola, Wei-Chen Chang i Thomas Mueller. "Improved Screen-Printed Cu Metallisation for Passivated Contact Solar Cells". W 2020 IEEE 47th Photovoltaic Specialists Conference (PVSC). IEEE, 2020. http://dx.doi.org/10.1109/pvsc45281.2020.9300995.

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Guthrey, Harvey, Abhijit S. Kale, William Nemeth, Matthew Page, Sumit Agarwal, David Young, Mowafak Al-Jassim i Paul Stradins. "Nonuniform Charge Collection in SiOx-Based Passivated-Contact Silicon Solar Cells". W 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC). IEEE, 2019. http://dx.doi.org/10.1109/pvsc40753.2019.8981371.

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Nemeth, Bill, Steve P. Harvey, David L. Young, Matthew R. Page, Vincenzo La Salvia, Dawn Findley, Abhijit Kale, San Theingi i Paul Stradins. "Critical interface: Poly-silicon to tunneling SiO2 for passivated contact performance". W 15th International Conference on Concentrator Photovoltaic Systems (CPV-15). AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5123857.

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Konig, Marcel, Thomas Kluge, Thomas Grosse, Hans-Peter Sperlich, Lauretta Fondop Makoudjou, Naomi Nandakumar, John Woodrofee Rodriguez i Shubham Duttagupta. "Single side passivated contact technology exceeding 22.5% with industrial production equipment". W 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. http://dx.doi.org/10.1109/pvsc.2018.8547870.

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Kohler, Malte, Alexandr Zamchiy, Manuel Pomaska, Andreas Lambertz, Florian Lentz, Weiyuan Duan, Vladimir Smirnov, Friedhelm Finger, Uwe Rau i Kaining Ding. "Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells". W 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. http://dx.doi.org/10.1109/pvsc.2018.8548008.

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Bridges, G. E., D. J. Thomson i R. Qi. "Non-Contact Probing of Integrated Circuits Using Electrostatic Force Sampling". W ISTFA 1998. ASM International, 1998. http://dx.doi.org/10.31399/asm.cp.istfa1998p0169.

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Abstract We present a non-contact probing technique for measuring highfrequency voltage waveforms at the internal points of an operating integrated circuit. Internal circuit voltages are measured by sensing the local electrostatic force on a small micromachined probe that is held in close proximity to the circuit measurement point. The instrument currently has a 3GHz bandwidth and a capacitive loading on the test point of less than 1fF. The non-contact technique is capable of measuring signals on passivated interconnects
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Huang, Chien-Chi, Ting-Yun Yang, Ling-Yu Wang, Han-Chen Chang, Ming-Tsun Kuo, Ya-Ping Wen, Chorng-Jye Huang i Peichen Yu. "TCAD Modeling of Interdigitated Back Contact Solar Cells with Hybrid Diffusion and Tunnel Oxide Passivated Contacts". W 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). IEEE, 2021. http://dx.doi.org/10.1109/pvsc43889.2021.9518438.

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Xie, Jing, Jian Wu, Xusheng Wang i Lingjun Zhang. "Optimization of local contact formation on screen-printed Al2O3 passivated solar cells". W 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6744934.

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Lee, Benjamin G., William Nemeth, Hao-Chih Yuan, Matthew R. Page, Vincenzo LaSalvia, David L. Young i Paul Stradins. "Heterojunction rear passivated contact for high efficiency n-Cz Si solar cells". W 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6924996.

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Wang, Xusheng, Jian Wu i Lingjun Zhang. "Optimization of local contact formation on screen-printed Al2O3 passivated solar cells". W 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925447.

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