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Gotowa bibliografia na temat „Paraelectrics”

Autor: Grafiati

Data publikacji: 7 grudnia 2024

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Artykuły w czasopismach na temat "Paraelectrics"

WANG, C. L., i M. L. ZHAO. "BURNS TEMPERATURE AND QUANTUM TEMPERATURE SCALE". Journal of Advanced Dielectrics 01, nr 02 (kwiecień 2011): 163–67. http://dx.doi.org/10.1142/s2010135x1100029x.

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In this article, two concepts of temperature, i.e., Burns temperature for relaxor ferroelectrics and quantum temperature scale for quantum paraelectrics, are reviewed briefly. Since both temperatures describe the deviation of the dielectric constant from Curie–Weiss law, their relationship is discussed. Finally the concept of quantum temperature scale is extended to demonstrate the evolution process of quantum paraelectric behavior to relaxor ferroelectric behavior.

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Coak, Matthew J., Charles R. S. Haines, Cheng Liu, Stephen E. Rowley, Gilbert G. Lonzarich i Siddharth S. Saxena. "Quantum critical phenomena in a compressible displacive ferroelectric". Proceedings of the National Academy of Sciences 117, nr 23 (26.05.2020): 12707–12. http://dx.doi.org/10.1073/pnas.1922151117.

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The dielectric and magnetic polarizations of quantum paraelectrics and paramagnetic materials have in many cases been found to initially increase with increasing thermal disorder and hence, exhibit peaks as a function of temperature. A quantitative description of these examples of “order-by-disorder” phenomena has remained elusive in nearly ferromagnetic metals and in dielectrics on the border of displacive ferroelectric transitions. Here, we present an experimental study of the evolution of the dielectric susceptibility peak as a function of pressure in the nearly ferroelectric material, strontium titanate, which reveals that the peak position collapses toward absolute zero as the ferroelectric quantum critical point is approached. We show that this behavior can be described in detail without the use of adjustable parameters in terms of the Larkin–Khmelnitskii–Shneerson–Rechester (LKSR) theory, first introduced nearly 50 y ago, of the hybridization of polar and acoustic modes in quantum paraelectrics, in contrast to alternative models that have been proposed. Our study allows us to construct a detailed temperature–pressure phase diagram of a material on the border of a ferroelectric quantum critical point comprising ferroelectric, quantum critical paraelectric, and hybridized polar-acoustic regimes. Furthermore, at the lowest temperatures, below the susceptibility maximum, we observe a regime characterized by a linear temperature dependence of the inverse susceptibility that differs sharply from the quartic temperature dependence predicted by the LKSR theory. We find that this non-LKSR low-temperature regime cannot be accounted for in terms of any detailed model reported in the literature, and its interpretation poses an empirical and conceptual challenge.

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Courtens, E., B. Hehlen, G. Coddens i B. Hennion. "New excitations in quantum paraelectrics". Physica B: Condensed Matter 219-220 (kwiecień 1996): 577–80. http://dx.doi.org/10.1016/0921-4526(95)00817-9.

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DelRe, Eugenio, Mario Tamburrini i Aharon J. Agranat. "Soliton electro-optic effects in paraelectrics". Optics Letters 25, nr 13 (1.07.2000): 963. http://dx.doi.org/10.1364/ol.25.000963.

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Das, Nabyendu, i Suresh G. Mishra. "Fluctuations and criticality in quantum paraelectrics". Journal of Physics: Condensed Matter 21, nr 9 (4.02.2009): 095901. http://dx.doi.org/10.1088/0953-8984/21/9/095901.

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Tosatti, E., i R. Martoňák. "Rotational melting in displacive quantum paraelectrics". Solid State Communications 92, nr 1-2 (październik 1994): 167–80. http://dx.doi.org/10.1016/0038-1098(94)90870-2.

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Vorotiahin, I. S., Yu M. Poplavko i Y. M. Fomichov. "Features of Dielectric Nonlinearity in Paraelectrics". Ukrainian Journal of Physics 60, nr 04 (kwiecień 2015): 339–50. http://dx.doi.org/10.15407/ujpe60.04.0339.

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Kleemann, W., Y. G. Wang, P. Lehnen i J. Dec. "Phase transitions in doped quantum paraelectrics". Ferroelectrics 229, nr 1 (maj 1999): 39–44. http://dx.doi.org/10.1080/00150199908224315.

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Wang, Y. G., W. Kleemann, J. Dec i W. L. Zhong. "Dielectric properties of doped quantum paraelectrics". Europhysics Letters (EPL) 42, nr 2 (15.04.1998): 173–78. http://dx.doi.org/10.1209/epl/i1998-00225-3.

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Wang, Y. G., W. Kleemann, W. L. Zhong i L. Zhang. "Impurity-induced phase transition in quantum paraelectrics". Physical Review B 57, nr 21 (1.06.1998): 13343–46. http://dx.doi.org/10.1103/physrevb.57.13343.

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Rozprawy doktorskie na temat "Paraelectrics"

Agudelo, Estrada Santiago Alberto. "Interface chemistry and electronic structure in voltage-adjustable paraelectric capacitances for 5G applications". Electronic Thesis or Diss., université Paris-Saclay, 2024. http://www.theses.fr/2024UPASP131.

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Le déploiement de la technologie 5G a soulevé des préoccupations significatives concernant la consommation d'énergie. Celle-ci peut être minimisée en ajustant l'impédance de l'antenne à 50 ohms. Pour répondre aux exigences de la 5G et du NFC, un circuit d'adaptation d'impédance contrôlable en tension avec une capacité hautement modulable (varactor) est nécessaire. Plus précisément, un rapport de réglage d'au moins 5 et de faibles pertes diélectriques dans la bande 5G (2-5 GHz) sont essentiels pour préserver l'efficacité énergétique (courant de fuite ~1 nA). Les condensateurs paraélectriques (PE) à commande de tension répondent à ce besoin grâce à leur permittivité relative dépendante du champ électrique εᵣ (E).Le pérovskite Ba₁₋ᵧSrᵧTiO₃ (BST) est largement utilisé dans les varactors 4G pour son excellent compromis entre la réglabilité et les pertes, offrant des facteurs de qualité supérieurs par rapport aux autres technologies. Cependant, une fréquence de résonance acoustique fᵣ de 3 GHz due à l'électrostriction limite les applications 4G actuelles. Ainsi, la 5G et le NFC nécessitent des varactors améliorés, spécifiquement avec fᵣ > 5 GHz et une tension de fonctionnement < 3 V. Une épaisseur de BST inférieure à 50 nm, déplaçant fᵣ au-delà de 6 GHz, peut répondre à ces spécifications. Cependant, ces varactors minces présentent une réglabilité dégradée et un courant de fuite plus élevé, en raison de la permittivité diélectrique réduite près des électrodes causée par des charges de polarisation non compensées et une fuite statique par transport limité au volume. L'augmentation de la hauteur de barrière de Schottky (SBH) à l'interface électrode/BST par alignement de bande peut réduire considérablement les fuites en empêchant l'injection de porteurs dans le diélectrique. Les calculs ab initio soulignent l'importance d'incorporer une couche de contrôle d'interface pérovskite (ICL) de quelques nanomètres de films conducteurs ou diélectriques entre l'électrode inférieure et le BST dans les varactors. Des facteurs tels que le gauchissement, la discontinuité polaire et l'asymétrie de l'environnement des cations sur le site B de l'interface peuvent améliorer la polarisabilité de l'interface et la hauteur de barrière de Schottky (SBH).Comprendre les mécanismes contrôlant les interfaces électrode/PE est crucial pour les applications 5G et NFC, révélant des modifications chimiques et électrostatiques de la SBH et du potentiel chimique. Nous proposons d'étudier les états électroniques et chimiques de ces interfaces à l'échelle sub-micrométrique, comparés aux calculs DFT.La Déposition Combinatoire par Laser Pulsé a été utilisée pour varier les compositions chimiques et les épaisseurs de manière orthogonale sur un seul substrat. Une discontinuité polaire variable a été induite à l'interface LSMO/BST en insérant une ICL de 3 u.c. d'épaisseur de La₁₋ₓSrₓMnO₃ (une discontinuité polaire entre 1 et 0 e⁻).Nous avons étudié la polarisation de l'interface en fonction de l'épaisseur de BST. La spectroscopie de photoémission a montré une modulation de la fonction de travail φ, de la densité de porteurs à l'interface au niveau de Fermi, et de la polarisation de l'interface, démontrant l'impact de l'ICL chimiquement modifiée de 1,2 nm d'épaisseur. Enfin, nous avons fabriqué des varactors BST réglables en tension en utilisant l'ingénierie ICL. Nous avons étudié la SBH en fonction de la discontinuité polaire à l'interface. La HAXPES en mode opératoire a permis d'accéder aux interfaces supérieures et inférieures, nous permettant d'estimer la structure de bande électronique et de quantifier la SBH. L'induction d'une discontinuité polaire à l'interface a entraîné une réduction du courant de fuite. Pour des varactors BST de 10x10 μ m², le courant de fuite est attendu à environ 1 nA, une amélioration de deux ordres de grandeur par rapport aux varactors des téléphones 4G actuels
The deployment of 5G technology has raised significant issues of energy consumption. This can be minimized by adjusting the antenna impedance to 50 ohms. Impedance matching is also crucial for Near Field Communications (NFC) to ensure energy-efficient contactless communications. To meet 5G and NFC requirements, a voltage-controllable impedance matching circuit with highly tunable capacitance (varactor) is needed. Specifically, a tuning ratio of at least 5 and low dielectric losses in the 5G band (2-5 GHz) are essential to preserve energy efficiency (leakage current ~1 nA). Voltage-tunable paraelectric (PE) capacitors meet this need due to their field-dependent relative permittivity εᵣ (E). The perovskite Ba₁₋ᵧSrᵧTiO₃ (BST) is widely used in 4G varactors for its excellent tunability/losses compromise, offering superior quality factors compared to other technologies. However, an acoustic resonance frequency fᵣ of 3 GHz due to electrostriction limits current 4G applications. Thus, 5G and NFC require improved varactors, specifically with fᵣ > 5 GHz and an operating voltage < 3 V. A BST thickness below 50 nm, shifting fᵣ above 6 GHz, can meet these specifications. However, these thin varactors exhibit degraded tunability and higher leakage current, due to reduced dielectric permittivity near electrodes from uncompensated polarization charges and static leakage through bulk-limited transport. Enhancing the Schottky Barrier Height (SBH) at the electrode/BST interface through band alignment can significantly reduce leakage by preventing carrier injection into the dielectric. Ab initio calculations highlight the importance of incorporating a perovskite Interface Control Layer (ICL) of a few nanometers of conductive or dielectric films between the bottom electrode and the BST in varactors. Factors such as rumpling, polar discontinuity, and interfacial B-site cation environment asymmetry can enhance interface polarizability and the Schottky Barrier Height (SBH). Understanding the mechanisms controlling electrode/PE interfaces is crucial for 5G and NFC applications, revealing chemical and electrostatic modifications of SBH and chemical potential. We propose investigating the electronic and chemical states of these interfaces at the sub-micrometric scale, compared with DFT calculations. Combinatorial Pulsed Laser Deposition (CPLD) was used to vary chemical compositions and thicknesses orthogonally on a single substrate. Chemical modulation at the Ba atoms and Ba diffusion into the dielectric STO up to the surface, driven by strain release to reduce system energy. Second, a variable polar discontinuity was induced at the LSMO/BST interface by inserting a 3 u.c. thick ICL of La₁₋ₓSrₓMnO₃ (a polar discontinuity between 1 and 0 e⁻). We investigated the interface polarization relative to BST thickness. Photoemission spectroscopy showed modulation of the work function φ, interface carrier density at the Fermi level, and interface polarization, demonstrating the impact of the 1.2 nm thick chemically modulated ICL. Finally, we fabricated voltage-tunable BST varactors using ICL engineering. We investigated the SBH versus polar discontinuity at the interface. Operando HAXPES provided access to both top and bottom interfaces, allowing us to estimate the electronic band structure and quantify the SBH. Inducing a polar discontinuity at the interface resulted in a reduction of leakage current. For 10x10 µm² BST-engineered varactors, the leakage current is expected to be close to 1 nA, an improvement by two orders of magnitude compared to current 4G cellphone varactors

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Martonak, Roman. "Models of quantum paraelectric behaviour of perovskites". Doctoral thesis, SISSA, 1993. http://hdl.handle.net/20.500.11767/4058.

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The thesis is organized as follows. In the rest of this introductory chapter we review in more detail the main relevant experiments, and point to some implications of these for our model building. Chapter 2 is devoted to a general discussion of models to be treated in subsequent chapters. First we recall the well-known displacive versus orderdisorder regime aspects of the standard classical model for structural phase transitions, and discuss the extent to which these aspects pertain to the case of QPE perovskites. Correspondingly, we divide the possible models into two classes, those based on continuous and those based on discrete degrees of freedom. As an example of the former class, we propose a Landau-Ginzburg-Wilson hamiltonian for SrTi03 , including elastic couplings, which leads to discuss the existence of an incommensurate phase. Considering the latter class of models, we try to identify their most important ingredients, taking as relevant degrees of freedom the discrete Ti - 0 bond variables. In Chapter 3, the classical incommensurate ferroelectricity arising from elastic couplings is investigated in detail, and the effect of quantum fluctuations is discussed on a heuristic level. In Chapter 4 we then investigate three idealized 2D quantum discrete lattice models. The first is a plain quantum four-state clock model, while the second includes an ice-type constraint. Both models are studied by means of a numerical Path Integral Monte Carlo simulation (PIMC), and the corresponding phase diagrams are determined with reasonable accuracy. On the technical side, in order to overcome the pathologically slow 1 / m convergence in number of Trotter slices in case of the constrained model, a special method has been invented, which is described in detail in Appendix A. In the last section of chapter 4 we describe our third model, which consists of endowing the constrained four-state clock model with an additional physical effect, namely the possibility of bond hopping and 'bond vacancies'. For this third model we have so far not been able to set up an accurate numerical simulation technique, allowing us to determine the complete phase diagram in the parameter space at finite temperatures. Some general considerations are presented, based on analogies with Andreev and Lifshitz's work [18] on quantum crystals of H e^4 , whose main idea is briefly summarized in Appendix B, for the sake of completeness. A particular zero temperature and zero coupling case of this more complete third model is studied numerically, by means of a Variational Monte Carlo technique, the details of which are described in Appendix C. Finally the last, fifth, chapter is devoted to discussion and conclusions.

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Linnik, Ekaterina. "Propriétés spectrales des paraélectriques quantiques". Electronic Thesis or Diss., Amiens, 2022. http://www.theses.fr/2022AMIE0037.

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Un SrTiO3 paraélectrique quantique est un matériau situé à proximité d'un point critique quantique de la transition ferroélectrique dans lequel la température critique vers l'état ferroélectrique est supprimée jusqu'à 0 K. Cependant, la compréhension du comportement de la transition de phase à proximité de ce point reste problématique. Ici, nous étudions les solutions solides basées sur le SrTiO3 pour approcher les régions pré-critiques du diagramme de phase et étudions le résultat de la coexistence des fluctuations quantiques et du mouvement thermique. Cela permettra la découverte de nouvelles déclarations de phase et de nouvelles propriétés physiques, résultant de la concurrence des régimes quantiques et classiques. En utilisant la concentration x de Pb dans la solution solide PbxSr1-xTiO3 comme paramètre d'accord et par l'application de la combinaison des méthodes de spectroscopie Raman et diélectrique, on approche le point critique quantique et on étudie l'interaction des phénomènes classiques et quantiques dans la zone de criticité. On obtient la température critique de PbxSr1-xTiO3 et l'évolution des propriétés dynamiques du système en fonction de x pour révéler le mécanisme de la transition. On montre que la transition ferroélectrique se produit progressivement par l'émergence de nanorégions polaires. On étudie également la transition structurelle cubique à tétragonale, qui se produit à des températures plus élevées, et montre que ses propriétés sont presque indépendantes de la concentration et ne sont pas affectées par la criticité quantique. On étudie la structure cristalline et la dynamique du réseau de solutions solides paraélectriques quantiques de BaxSr1-xTiO3 à l'aide de la diffraction des rayons X, de la spectroscopie Raman et de la spectroscopie infrarouge-térahertz (THz-IR) dans une gamme de température de 4-300 K. La diffraction des rayons X et la spectroscopie Raman révèlent la transition de phase structurale non polaire cubique à tétragonal à environ 100K. En même temps, les spectres Raman manifestent la présence de modes polaires, TO2 et TO4, normalement interdits en phase paraélectrique. L'émergence de ces modes indique l'apparition des nanorégions polaires dans une large plage de températures. Les modes deviennent plus intensifs à basse température, la dépendance en température de leurs intensités lors du refroidissement révèle un changement de pente en forme de coude, de plat à raide, indiquant l'activation des nanorégions polaires. Les spectres de transmission THz-IR montrent que les fréquences au carré des modes mous polaires TO1, responsables de la transition ferroélectrique, suivent le comportement de Cochran à haute température. Cependant, à basse température, ceux-ci ne disparaissent pas mais saturent à la température de Curie extrapolée, démontrant la caractéristique de plateau en dessous de 20K. Ce comportement, cohérent avec la saturation connue de la constante diélectrique, indique que la transition vers la phase ferroélectrique dans BaxSr1-xTiO3 est supprimée par les fluctuations quantiques et que le système reste dans l'état paraélectrique quantique à très basse température. Nous étudions également en détail les propriétés diélectriques du PbxSr1-xTiO3 et montrons que dans la composition avec x = 0,005, un plateau lisse est observé dans la dépendance à la température de la permittivité diélectrique. La hauteur du plateau dépend de la concentration en Pb et diminue progressivement lorsque x augmente. Ce plateau est dû aux fluctuations quantiques aléatoires des ions qui dominent à basses températures et concentrations. À x plus élevé, les fluctuations thermiques deviennent plus prononcées; donc le plateau disparaît
A quantum paraelectric SrTiO3 is a material situated in close proximity to a quantum critical point of ferroelectric transition in which the critical temperature of ferroelectric state is suppressed down to 0 K. However, the understanding of the behaviour of the phase transition in the vicinity of this point remains challenging. Here we study the solid solutions based on the SrTiO3 to approach the pre-critical regions of the phase diagram and study the outcome of the coexistence of quantum fluctuations and thermal motion. It will allow the discovery of the novel phase statements and physical properties, occurring due to competition of quantum and classical regimes. We study the crystal structure and lattice dynamics of quantum paraelectric BaxSr1 xTiO3 solid solutions using X-Ray diffraction, Raman and terahertz-infrared (THz-IR)-spectroscopies in a temperature range 4-300K. The X-Ray diffraction and Raman spectroscopy reveal the cubic-to-tetragonal non-polar structural phase transition at about 100K. At the same time, Raman spectra manifest the presence of polar modes, TO2 and TO4, normally prohibited in paraelectric phase. Emergence of these modes indicates the appearance of the polar nanoregions in a broad temperature range. The modes become more intensive at low temperatures, the temperature dependence of their intensities on cooling reveals the kink-like change of the slope from flat to steep, indicating on activation of polar nanoregions. The transmission THz-IR-spectra show, that squared frequencies of the polar TO1 soft modes, responsible for the ferroelectric transition, follow the Cochran’s behavior at high temperatures. However, at low temperatures, it does not vanish at extrapolated Curie temperature but saturates, demonstrating the plateau feature below 20K. This behavior, coherent with the known saturation of the dielectric constant, indicates that transition to ferroelectric phase in BaxSr1-xTiO3 is suppressed by quantum fluctuations and system stays in the quantum paraelectric state at very low temperatures. Using the concentration of Pb in PbxSr1-xTiO3 solid solutions as a tuning parameter and applying the combination of Raman and dielectric spectroscopy methods we approach the quantum critical point in PbxSr1-xTiO3 and study the interplay of classical and quantum phenomena in the region of criticality. We obtain the critical temperature of PbxSr1-xTiO3 and the evolution of the temperature-dependent dynamical properties of the system as a function of x to reveal the mechanism of the transition. We show that the ferroelectric transition occurs gradually through the emergence of the polar nanoregions. We study also the cubic-to-tetragonal structural transition, occurring at higher temperatures, and show that its properties are almost concentration-independent and not affected by the quantum criticality. We also study the dielectric properties for the PbxSr1-xTiO3 in detail and show that in the composition with x = 0.005, a smooth plateau is observed in the temperature dependence of the dielectric permittivity. The height of the plateau depends on the Pb concentration and gradually decreases when x increases. This plateau arises due to random quantum fluctuations of the ions which dominate at low temperatures and concentrations. At higher x, the thermal fluctuations become more pronounced; therefore the plateau disappears

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Braun, Hubertus [Verfasser]. "Titanate-based paraelectric glass-ceramics for applications in GHz electronics / Hubertus Braun". Mainz : Universitätsbibliothek Mainz, 2015. http://d-nb.info/1071503707/34.

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Plonka, Rafael. "Impact of the interface on the paraelectric-to-ferroelectric phase transition in epitaxial BaSrTiO_tn3 thin film capacitors". Jülich Forschungszentrum, Zentralbibliothek, 2007. http://d-nb.info/1000127257/34.

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Atamalian, Aleksandra. "Puslaidininkinių – feroelektrinių kristalų lūžio rodiklio ir dvejopo lūžio tyrimas". Master's thesis, Lithuanian Academic Libraries Network (LABT), 2011. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2011~D_20110627_113402-11889.

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Kietojo kūno optikos mokslinėje laboratorijoje buvo išmatuoti mūsų išaugintų SbSI, TlInS2 ir TGS kristalų dvejopo lūžio priklausomybė nuo temperatūros. Eksperimentinis dvejopo lūžio priklausomybės nuo temperatūros tyrimas leido nustatyti TGS, TlInS2 ir SbSI kristalų fazinių virsmų temperatūrą. Teoriškai, tankio funkcionalo teorijos metodu (DFT), buvo apskaičiuoti SbSI kristalo lūžio rodikliai paraelektrinėje ir feroelektrinėje fazėse. Taip pat skaičiuotas dvejopas lūžis feroelektrinio fazinio virsmo srityje. Teoriniai dvejopo lūžio skaičiavimų rezultatai palyginti su eksperimentiniais matavimų rezultatais.
In Solid State Science Laboratory we measured birefringence on temperature of grown SbSI, TlInS2 and TGS crystals. The measurement of birefringence helps to evaluate the ferroelectric phase transition of TGS, TlInS2 ir SbSI crystals. Refractive indices of SbSI crystal in paraelectric and ferroelectric phase we investigated by DFT method with program Wien2k. The theoretical results of birefringence were compared with experimental results.

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Xiao, Bo. "GROWTH, CHARACTERIZATION AND APPLICATIONS OF MULTIFUNCTIONAL FERROELECTRIC THIN FILMS". VCU Scholars Compass, 2009. http://scholarscompass.vcu.edu/etd/1936.

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Ferroelectric materials have been extensively studied theoretically and experimentally for many decades. Their ferroelectric, piezoelectric, pyroelectric, dielectric and electro-optical properties offer great promise in various applications such as non-volatile random access memory devices, non linear optics, motion and thermal sensors, and tunable microwave devices. Advanced applications for high dielectric constant insulators and nonvolatile memories in semiconductor industry have led to a meteoric rise of interest in the ferroelectrics recently. As most studied and technically important ferroelectric materials, lead zirconate titanate (PZT) and barium strontium titanate (BST) are widely investigated to understand their properties for potential device applications. Using radio frequency magnetron sputtering, single crystalline PZT and BST thin films have been achieved on SrTiO3 substrates, and been characterized for their structural and electrical properties. Eyeing their different potential applications, ferroelectric, pyroelectric and dielectric properties of PZT and BST thin films were studied. In addition, the introduction of bridge layers (nucleation or buffer layers) grown by molecular beam epitaxy (MBE) has been employed to facilitate the heterostructure growth of PZT thin films on GaN and BST thin films on sapphire substrates. Highly (111)-oriented perovskite PZT thin films were achieved on silicon-doped GaN (0001)/c-sapphire with a PbTiO3/PbO oxide bridge layer. And (001)-oriented BST thin films were grown on a-plane sapphire with an MgO/ZnO bridge layer. This dissertation also discusses the realization of PZT ferroelectric field effect transistors (FeFET). Two different 1T FeFET structures were successfully fabricated and their electrical properties were examined. Ferroelectric behavior was observed in the plot of source-drain current versus gate voltage where it exhibited a large counterclockwise hysteresis with 50% current modulation.

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Sidoruk, Jakob. "Konkurrierende ferroische Ordnungsparameter in SrTiO3: Domänenverhalten und Schaltverhalten". Doctoral thesis, Niedersächsische Staats- und Universitätsbibliothek Göttingen, 2014. http://hdl.handle.net/11858/00-1735-0000-0022-5F60-D.

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Plonka, Rafael [Verfasser]. "Impact of the interface on the paraelectric-to-ferroelectric phase transition in epitaxial BaSrTiO_tn3 thin film capacitors / Rafael Plonka. [Forschungszentrum Jülich in der Helmholtz-Gemeinschaft, Institut für Festkörperforschung (IFF), Elektronische Materialien (IFF-6)]". Jülich : Forschungszentrum, Zentralbibliothek, 2007. http://d-nb.info/1000127257/34.

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Baylis, Samuel Andrew. "Tunable patch antenna using semiconductor and nano-scale Barium Strontium Titanate varactors". [Tampa, Fla.] : University of South Florida, 2007. http://purl.fcla.edu/usf/dc/et/SFE0001970.

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Książki na temat "Paraelectrics"

From Quantum Paraelectric/Ferroelectric Perovskite Oxides to High Temperature Superconducting Copper Oxides -- In Honor of Professor K.A. Müller for His Lifework. MDPI, 2021. http://dx.doi.org/10.3390/books978-3-0365-0475-9.

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Części książek na temat "Paraelectrics"

Dolin, S. P., A. A. Levin, T. Yu Mikhailova i M. V. Solin. "Quantum-Chemical Approach to Zero-Dimensional Antiferroelectrics and Quantum Paraelectrics of the K3H(SO4)2 Family". W Vibronic Interactions: Jahn-Teller Effect in Crystals and Molecules, 263–68. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-010-0985-0_30.

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Villars, P., K. Cenzual, R. Gladyshevskii, O. Shcherban, V. Dubenskyy, V. Kuprysyuk, I. Savysyuk i R. Zaremba. "KPb2Nb5O15 paraelectric". W Landolt-Börnstein - Group III Condensed Matter, 526. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-22847-6_441.

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Villars, P., K. Cenzual, R. Gladyshevskii, O. Shcherban, V. Dubenskyy, V. Kuprysyuk, I. Savysyuk i R. Zaremba. "Pb2KTa5O15 paraelectric". W Landolt-Börnstein - Group III Condensed Matter, 531. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-22847-6_446.

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Rigamonti, Attilio, i Pietro Carretta. "Dielectrics and Paraelectric-Ferroelectric Phase Transitions". W Structure of Matter, 477–503. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-17897-4_16.

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Geru, Ion, i Dieter Suter. "Exciton Paramagnetic, Paraelectric, and Zero-Field Resonances". W Resonance Effects of Excitons and Electrons, 27–64. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-35807-4_2.

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Samara, G. A. "From Ferroelectric to Quantum Paraelectric: KTa1-xNbxO3 (KTN), a Model System". W Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials, 179–88. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-010-0520-3_14.

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Fang, Huazhi, Yi Wang, Shun-Li Shang i Zi-Kui Liu. "Nature of Ferroelectric-Paraelectric Phase Transition and Origin of Negative Thermal Expansion in PbTiO3". W Zentropy, 627–43. New York: Jenny Stanford Publishing, 2024. http://dx.doi.org/10.1201/9781032692401-20.

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Tkach, Alexander, i Paula M. Vilarinho. "Nonstoichiometry Role on the Properties of Quantum-Paraelectric Ceramics". W Structure Processing Properties Relationships in Stoichiometric and Nonstoichiometric Oxides. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.89499.

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Streszczenie:

Among the lead-free perovskite-structure materials, strontium titanate (SrTiO3—ST) and potassium tantalate (KTaO3—KT), pure or modified, are of particular importance. They are both quantum paraelectrics with high dielectric permittivity and low losses that can find application in tunable microwave devices due to a dependence of the permittivity on the electric field. Factors as Sr/Ti and K/Ta ratio in ST and KT ceramics, respectively, can alter the defect chemistry of these materials and affect the microstructure. Therefore, if properly understood, cation stoichiometry variation may be intentionally used to tailor the electrical response of electroceramics. The scientific and technological importance of the stoichiometry variation in ST and KT ceramics is reviewed and compared in this chapter. The differences in crystallographic phase assemblage, grain size, and dielectric properties are described in detail. Although sharing crystal chemical similarities, the effect of the stoichiometry is markedly different. Even if the variation of Sr/Ti and K/Ta ratios did not change the quantum-paraelectric nature of ST and KT, Sr excess impedes the grain growth and decreases the dielectric permittivity in ST ceramics, while K excess promotes the grain growth and increases the dielectric permittivity in KT ceramics.

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"Dipolar and Quantum Paraelectric Behavior". W Properties of Perovskites and Other Oxides, 467–501. WORLD SCIENTIFIC, 2010. http://dx.doi.org/10.1142/9789814293365_0008.

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"Ferroelectric-paraelectric Phase Transition Thermodynamic Modeling". W Integration of Ferroelectric and Piezoelectric Thin Films, 49–65. Hoboken, NJ, USA: John Wiley & Sons, Inc, 2013. http://dx.doi.org/10.1002/9781118616635.ch3.

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Streszczenia konferencji na temat "Paraelectrics"

Ulrich, Anja, Kamal Brahim, Andries Boelen, Bart Kuyken i Christian Haffner. "Quantum paraelectric parametric amplifiers". W Quantum 2.0, QTh2C.6. Washington, D.C.: Optica Publishing Group, 2024. http://dx.doi.org/10.1364/quantum.2024.qth2c.6.

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A conceptual analysis of an RF parametric amplifier based on the quantum paraelectric strontium titanate. The analysis suggests a gain of 20dB, a bandwidth of several MHz and a dynamic range of -60dBm are feasible.

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Arago, C., M. I. Marques, C. L. Wang i J. A. Gonzalo. "Quantum paraelectrics revisited under effective field approach". W 2009 18th IEEE International Symposium on the Applications of Ferroelectrics (ISAF). IEEE, 2009. http://dx.doi.org/10.1109/isaf.2009.5307524.

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Hoffmann, Matthias C. "THz driven soft mode dynamics in quantum paraelectrics". W Terahertz Emitters, Receivers, and Applications XIV, redaktorzy Manijeh Razeghi i Mona Jarrahi. SPIE, 2023. http://dx.doi.org/10.1117/12.2681933.

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Grimalsky, V., S. Koshevaya, J. Escobedo-Alatorre i E. Jatirian-Foltides. "Formation of short terahertz electromagnetic pulses in nonlinear paraelectrics". W 2017 IEEE 30th International Conference on Microelectronics (MIEL). IEEE, 2017. http://dx.doi.org/10.1109/miel.2017.8190076.

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Matsushita, E., i S. Segawa. "Note on Oxygen Isotope Effect and Ferroelectric Transition in Quantum Paraelectrics". W 2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics. IEEE, 2007. http://dx.doi.org/10.1109/isaf.2007.4393235.

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Grimalsky, V., S. Koshevaya, J. Esobedo-Alatorre, Y. Gomez-Badillo i Yu Rapoport. "Modulation Instability of Terahertz Beams in Paraelectrics in a Wide Temperature Range". W 2020 IEEE Ukrainian Microwave Week (UkrMW). IEEE, 2020. http://dx.doi.org/10.1109/ukrmw49653.2020.9252663.

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Grimalsky, V., S. Koshevaya, J. Escobedo-Alatorre i Yu Rapoport. "Frequency multiplication of terahertz radiation in waveguides on the base of paraelectrics". W 2016 IEEE Radar Methods and Systems Workshop (RMSW). IEEE, 2016. http://dx.doi.org/10.1109/rmsw.2016.7778563.

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Grimalsky, V., S. Koshevaya, J. Escobedo-A i Y. Gomez-B. "Generation of Harmonics of Terahertz Radiation in Paraelectrics in a Wide Temperature Range". W 2019 IEEE 31st International Conference on Microelectronics (MIEL). IEEE, 2019. http://dx.doi.org/10.1109/miel.2019.8889649.

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Venturini, E. L. "Pressure As A Probe Of The Physics Of Compositionally-Substituted Quantum Paraelectrics: SrTiO3". W Fundamental Physics of Ferroelectrics 2003. AIP, 2003. http://dx.doi.org/10.1063/1.1609931.

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Sin'ko, D. V., i Boris V. Anikeev. "Photorefractive effect in paraelectric DKDP". W Nonlinear Optics of Liquid and Photorefractive Crystals, redaktorzy Gertruda V. Klimusheva i Andrey G. Iljin. SPIE, 1996. http://dx.doi.org/10.1117/12.239225.

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Raporty organizacyjne na temat "Paraelectrics"

Miller, Virginia, i Frank Crowne. Landau-Devonshire Parameters for the Tunable Paraelectric Material BaTi.9(Sc,Ta).05O3. Fort Belvoir, VA: Defense Technical Information Center, marzec 2008. http://dx.doi.org/10.21236/ada478947.

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