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Rozprawy doktorskie na temat "Oxydes ultraminces"
Matzen, Sylvia. "Films ultraminces épitaxiés de MnFe2O4, CoFe2O4 et NiFe2O4 pour le filtrage de spin à température ambiante". Paris 6, 2011. http://www.theses.fr/2011PA066358.
Pełny tekst źródłaPierron, Thomas. "Contribution à l’étude des propriétés de l’interface métal oxyde GeO/Ru(0001) par STM, XPS/ARPES et SXRD". Electronic Thesis or Diss., Université de Lorraine, 2021. http://www.theses.fr/2021LORR0160.
Pełny tekst źródłaThis thesis manuscript is dedicated to the study of silicon (SiO) and germanium (GeO) oxides in their ultra-thin forms. Developed by molecular beam epitaxy on the surface of a ruthenium (0001) crystal, these systems can exist in two stable phases. The first one is a monolayer connected to the substrate by covalent bonds forming a metal-oxide interface. The second one is a weakly interacting bilayer disconnected from the substrate. The weakness of the Van der Waals interactions allows its exfoliation to integrate it into functional heterostructures. In this thesis we study the relationship between structural and electronic properties of these two-dimensional (2D) materials by combining scanning tunneling microscopy (STM), angle-resolved photoemission (XPS, ARPES), surface X-ray diffraction (SXRD) and modelling by DFT methods. Some of our measurements (XPS, ARPES and SXRD) were obtained using synchrotron radiation. If the properties of the silicon oxide (SiO) bilayer are well understood, the description of the electronic properties of the metal-oxide interface proves to be more complex with the impossibility of reconciling the calculations with our ARPES measurements. To understand the origin of this disagreement, we studied the GeO/Ru(0001) interface in the monolayer regime. Our STM and XPS studies validated the atomic model proposed by DFT, including the rotation of Ge-O-Ge bonds and the presence of an interstitial oxygen. Complementary structural studies by SXRD validated the epitaxial relationship proposed by the calculation. Finally, the measured band structure is close to the DFT predictions, contrary to SiO, even if a small disagreement remains. This can be interpreted as an overestimation of the metal oxide bond strength by the calculation introducing a band gap at the Gamma point and at the K point not experimentally visible in ARPES in the case of SiO. Further SXRD measurements on SiO will support this hypothesis
Mouillon, Alexandre. "Couples de spin-orbite dans une couche de métal ferromagnétique ultramince comprise entre deux oxydes : confinement quantique et effet Rashba". Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAY034.
Pełny tekst źródłaExperimentally demonstrated in the early 2010's, spin-orbite torques (SOTs) very quickly generated a very strong interest in the magnetism and spin electronics community. Indeed, they allow, in a heavy metal / ferromagnetic metal / oxide (HM/FM/Ox) multilayer, to manipulate the magnetization of the ferromagnetic layer (FM) by injecting an in-plane current. Noting that the FM/Ox bilayer corresponds to half of a typical stack used in MRAM memory cells (Magnetic Random Access Memory), we understand that this mechanism is very interesting for writing the free layer of these cells. Indeed, the writing current no longer crosses the tunnel barrier, which naturally responds to some of the limitations of current MRAMs. However, the physical interpretation of these phenomena has proved to be particularly complex. These torques have two components, generally called "Field-like", FL, and "Damping-like", DL. While initially, theoretical studies predicted that the DL component was mainly due to a volume effect in the HM layer, and the FL component was mainly due to an interface effect, more recent experimental studies have shown that it is not so simple to separate these two contributions.In this thesis work, we have chosen an original approach that allows us to study only one of the two contributions. To do so, we have chosen to focus on the interfacial contribution by studying Ox1/FM/Ox2 samples. We were thus able to highlight in these stacks the presence of SOTs, which was not so obvious in a structure that did not contain heavy metal and also had a strong symmetry. On the other hand, we were able to show that only the FL component of these couples was present. The unexpected behaviour of this FL-SOT as a function of the thickness of the FM layer led us to propose a model based on the combination of a Rahsba interfacial effect and a quantum confinement effect due to the very thin thickness of conductive material in these multilayers
Stanescu, Stefan. "Structure et morphologie de couches ultraminces et nanostructures de NiO / Cu(111) et NiO / FeNi / Cu(111)". Phd thesis, Université Louis Pasteur - Strasbourg I, 2002. http://tel.archives-ouvertes.fr/tel-00010139.
Pełny tekst źródłaLe, Pévédic Séverine. "Etude de la formation et de l'oxydation de couches minces d'alliages Al-Ni après dépôt d'Al sur un monocristal de Ni(111)". Paris 6, 2007. https://tel.archives-ouvertes.fr/tel-00165301.
Pełny tekst źródłaLe, Pévédic Séverine. "Etude de la formation et de l'oxydation de couchesminces d'alliages Al-Ni après dépôt d'Al sur unmonocristal de Ni(111)". Phd thesis, Université Pierre et Marie Curie - Paris VI, 2007. http://tel.archives-ouvertes.fr/tel-00165301.
Pełny tekst źródłaClerc, Raphaël. "Étude des effets quantiques dans les composants CMOS à oxyde de grille ultra minces : modélisation et caractérisation". Grenoble INPG, 2001. http://www.theses.fr/2001INPG0099.
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