Artykuły w czasopismach na temat „Ovonic Threshold Selector (OTS)”
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Zhang, Shiqing, Bing Song, Shujing Jia, Rongrong Cao, Sen Liu, Hui Xu i Qingjiang Li. "Multilayer doped-GeSe OTS selector for improved endurance and threshold voltage stability". Journal of Semiconductors 43, nr 10 (1.10.2022): 104101. http://dx.doi.org/10.1088/1674-4926/43/10/104101.
Pełny tekst źródłaKim, Jaeyeon, Wansun Kim, Jusung Kim i Hyunchul Sohn. "Locally formed conductive filaments in an amorphous Ga2Te3 ovonic threshold switching device". AIP Advances 13, nr 3 (1.03.2023): 035221. http://dx.doi.org/10.1063/5.0140715.
Pełny tekst źródłaWang, Lun, Jinyu Wen, Rongjiang Zhu, Jiangxi Chen, Hao Tong i Xiangshui Miao. "Failure mechanism investigation and endurance improvement in Te-rich Ge–Te based ovonic threshold switching selectors". Applied Physics Letters 121, nr 19 (7.11.2022): 193501. http://dx.doi.org/10.1063/5.0127177.
Pełny tekst źródłaWu, Renjie, Yuting Sun, Shuhao Zhang, Zihao Zhao i Zhitang Song. "Great Potential of Si-Te Ovonic Threshold Selector in Electrical Performance and Scalability". Nanomaterials 13, nr 6 (21.03.2023): 1114. http://dx.doi.org/10.3390/nano13061114.
Pełny tekst źródłaNoé, Pierre, Anthonin Verdy, Francesco d’Acapito, Jean-Baptiste Dory, Mathieu Bernard, Gabriele Navarro, Jean-Baptiste Jager, Jérôme Gaudin i Jean-Yves Raty. "Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed". Science Advances 6, nr 9 (luty 2020): eaay2830. http://dx.doi.org/10.1126/sciadv.aay2830.
Pełny tekst źródłaSeong, Dongjun, Su Yeon Lee, Hyun Kyu Seo, Jong-Woo Kim, Minsoo Park i Min Kyu Yang. "Highly Reliable Ovonic Threshold Switch with TiN/GeTe/TiN Structure". Materials 16, nr 5 (2.03.2023): 2066. http://dx.doi.org/10.3390/ma16052066.
Pełny tekst źródłaLaguna, C., M. Bernard, J. Garrione, F. Fillot, F. Aussenac, D. Rouchon, G. Lima, L. Militaru, A. Souifi i G. Navarro. "Inside the ovonic threshold switching (OTS) device based on GeSbSeN: Structural analysis under electrical and thermal stress". Journal of Applied Physics 133, nr 7 (21.02.2023): 074501. http://dx.doi.org/10.1063/5.0134947.
Pełny tekst źródłaKim, Myoungsub, Youngjun Kim, Minkyu Lee, Seok Man Hong, Hyung Keun Kim, Sijung Yoo, Taehoon Kim, Seung-min Chung, Taeyoon Lee i Hyungjun Kim. "PE-ALD of Ge1−xSx amorphous chalcogenide alloys for OTS applications". Journal of Materials Chemistry C 9, nr 18 (2021): 6006–13. http://dx.doi.org/10.1039/d1tc00650a.
Pełny tekst źródłaMinguet Lopez, J., T. Hirtzlin, M. Dampfhoffer, L. Grenouillet, L. Reganaz, G. Navarro, C. Carabasse i in. "OxRAM + OTS optimization for binarized neural network hardware implementation". Semiconductor Science and Technology 37, nr 1 (8.12.2021): 014001. http://dx.doi.org/10.1088/1361-6641/ac31e2.
Pełny tekst źródłaKweon, Jun Young, i Yun-Heup Song. "CMOS Based Ovonic Threshold Switching Emulation Circuitry". Journal of Nanoscience and Nanotechnology 20, nr 8 (1.08.2020): 4977–79. http://dx.doi.org/10.1166/jnn.2020.17807.
Pełny tekst źródłaYoo, Sijung, Chanyoung Yoo, Eui-Sang Park, Woohyun Kim, Yoon Kyeung Lee i Cheol Seong Hwang. "Chemical interactions in the atomic layer deposition of Ge–Sb–Se–Te films and their ovonic threshold switching behavior". Journal of Materials Chemistry C 6, nr 18 (2018): 5025–32. http://dx.doi.org/10.1039/c8tc01041b.
Pełny tekst źródłaKim, Doo San, Ju Eun Kim, You Jung Gill, Jin Woo Park, Yun Jong Jang, Ye Eun Kim, Hyejin Choi, Oik Kwon i Geun Young Yeom. "Reactive ion etching of an ovonic threshold switch (OTS) material using hydrogen-based plasmas for non-volatile phase change memories". RSC Advances 10, nr 59 (2020): 36141–46. http://dx.doi.org/10.1039/d0ra05321j.
Pełny tekst źródłaAn, Byung-Kwon, Seong-Beom Kim i Yun-Heub Song. "Effect of Bottom Electrode Size on Ovonic Threshold Switch(OTS) Characteristics". JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 20, nr 1 (29.02.2020): 8–11. http://dx.doi.org/10.5573/jsts.2020.20.1.008.
Pełny tekst źródłaLee, Su Yeon, Hyun Kyu Seo, Se Yeon Jeong i Min Kyu Yang. "Improved Electrical Characteristics of Field Effect Transistors with GeSeTe-Based Ovonic Threshold Switching Devices". Materials 16, nr 12 (11.06.2023): 4315. http://dx.doi.org/10.3390/ma16124315.
Pełny tekst źródłaWang, Lun, Wang Cai, Da He, Qi Lin, Daixing Wan, Hao Tong i Xiangshui Miao. "Performance Improvement of GeTex-Based Ovonic Threshold Switching Selector by C Doping". IEEE Electron Device Letters 42, nr 5 (maj 2021): 688–91. http://dx.doi.org/10.1109/led.2021.3064857.
Pełny tekst źródłaLee, Hyejin, Seong Won Cho, Seon Jeong Kim, Jaesang Lee, Keun Su Kim, Inho Kim, Jong-Keuk Park i in. "Three-Terminal Ovonic Threshold Switch (3T-OTS) with Tunable Threshold Voltage for Versatile Artificial Sensory Neurons". Nano Letters 22, nr 2 (13.01.2022): 733–39. http://dx.doi.org/10.1021/acs.nanolett.1c04125.
Pełny tekst źródłaGao, Tian, Jie Feng, Haili Ma, Xi Zhu i Zhixian Ma. "AlxTe1−x selector with high ovonic threshold switching performance for memory crossbar arrays". Applied Physics Letters 114, nr 16 (22.04.2019): 163505. http://dx.doi.org/10.1063/1.5089818.
Pełny tekst źródłaPark, Jin Woo, Doo San Kim, Won Oh Lee, Ju Eun Kim, HyeJin Choi, OIk Kwon, SeungPil Chung i Geun Young Yeom. "Etch Damages of Ovonic Threshold Switch (OTS) Material by Halogen Gas Based-Inductively Coupled Plasmas". ECS Journal of Solid State Science and Technology 8, nr 6 (2019): P341—P345. http://dx.doi.org/10.1149/2.0051906jss.
Pełny tekst źródłaKim, Doo San, You Jung Gill, Yun Jong Jang, Ye Eun Kim i Geun Young Yeom. "Study on Hydrogen-Based Reactive Ion Etching of Ovonic Threshold Switch (OTS) Materials for Phase Change Memory Devices". ECS Transactions 102, nr 2 (7.05.2021): 39–43. http://dx.doi.org/10.1149/10202.0039ecst.
Pełny tekst źródłaKim, Doo San, You Jung Gill, Yun Jong Jang, Ye Eun Kim i Geun Young Yeom. "Study on Hydrogen-Based Reactive Ion Etching of Ovonic Threshold Switch (OTS) Materials for Phase Change Memory Devices". ECS Meeting Abstracts MA2021-01, nr 30 (30.05.2021): 1023. http://dx.doi.org/10.1149/ma2021-01301023mtgabs.
Pełny tekst źródłaKoo, Yunmo, Sangmin Lee, Seonggeon Park, Minkyu Yang i Hyunsang Hwang. "Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application". IEEE Electron Device Letters 38, nr 5 (maj 2017): 568–71. http://dx.doi.org/10.1109/led.2017.2685435.
Pełny tekst źródłaChen, Ziqi, Hao Tong, Wang Cai, Lun Wang i Xiangshui Miao. "Modeling and Simulations of the Integrated Device of Phase Change Memory and Ovonic Threshold Switch Selector With a Confined Structure". IEEE Transactions on Electron Devices 68, nr 4 (kwiecień 2021): 1616–21. http://dx.doi.org/10.1109/ted.2021.3059436.
Pełny tekst źródłaKim, S. D., H. W. Ahn, S. y. Shin, D. S. Jeong, S. H. Son, H. Lee, B. k. Cheong, D. W. Shin i S. Lee. "Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices". ECS Solid State Letters 2, nr 10 (18.07.2013): Q75—Q77. http://dx.doi.org/10.1149/2.001310ssl.
Pełny tekst źródłaKwak, Myonghoon, Sangmin Lee, Seyoung Kim i Hyunsang Hwang. "Improved Pattern Recognition Accuracy of Hardware Neural Network: Deactivating Short Failed Synapse Device by Adopting Ovonic Threshold Switching (OTS)-Based Fuse Device". IEEE Electron Device Letters 41, nr 9 (wrzesień 2020): 1436–39. http://dx.doi.org/10.1109/led.2020.3008936.
Pełny tekst źródłaSeo, Juhee, Seong Won Cho, Hyung-Woo Ahn, Byung-ki Cheong i Suyoun Lee. "A study on the interface between an amorphous chalcogenide and the electrode: Effect of the electrode on the characteristics of the Ovonic Threshold Switch (OTS)". Journal of Alloys and Compounds 691 (styczeń 2017): 880–83. http://dx.doi.org/10.1016/j.jallcom.2016.08.237.
Pełny tekst źródłaKashem, Md Tashfiq Bin, Sadid Muneer, Lhacene Adnane, Faruk Dirisaglik, Ali Gokirmak i Helena Silva. "(Digital Presentation) Calculation of the Energy Band Diagram and Estimation of Electronic Transport Parameters of Metastable Amorphous Ge2Sb2Te5". ECS Meeting Abstracts MA2022-01, nr 18 (7.07.2022): 1043. http://dx.doi.org/10.1149/ma2022-01181043mtgabs.
Pełny tekst źródłaZhao, Zihao, Sergiu Clima, Daniele Garbin, Robin Degraeve, Geoffrey Pourtois, Zhitang Song i Min Zhu. "Chalcogenide Ovonic Threshold Switching Selector". Nano-Micro Letters 16, nr 1 (11.01.2024). http://dx.doi.org/10.1007/s40820-023-01289-x.
Pełny tekst źródłaQiao, Chong, Lanli Chen, Rongchuan Gu, Bin Liu, Shengzhao Wang, Songyou Wang, Cai Zhuang Wang, Kai-Ming Ho, Ming Xu i Xiangshui Miao. "Structure, bonding and electronic characteristics of amorphous Se". Physical Chemistry Chemical Physics, 2024. http://dx.doi.org/10.1039/d4cp00078a.
Pełny tekst źródłaHaider, Ali, Shaoren Deng, Wouter Devulder, Jan Willem Maes, Jean Marc Girard, Gabriel Khalil El Hajjam, Gouri Kar i in. "Pulsed chemical vapour deposition of conformal GeSe for application as OTS selector". Materials Advances, 2021. http://dx.doi.org/10.1039/d0ma01014f.
Pełny tekst źródłaClima, Sergiu, Daisuke Matsubayashi, Taras Ravsher, Daniele Garbin, Romain Delhougne, Gouri Sankar Kar i Geoffrey Pourtois. "In silico screening for As/Se-free ovonic threshold switching materials". npj Computational Materials 9, nr 1 (3.06.2023). http://dx.doi.org/10.1038/s41524-023-01043-2.
Pełny tekst źródłaZhao, Jiayi, Zihao Zhao, Zhitang Song i Min Zhu. "GeSe ovonic threshold switch: the impact of functional layer thickness and device size". Scientific Reports 14, nr 1 (20.03.2024). http://dx.doi.org/10.1038/s41598-024-57029-7.
Pełny tekst źródłaLee, Jangseop, Sanghyun Ban, Yoori Seo, Dongmin Kim i Hyunsang Hwang. "Excellent Reliability Characteristics of Ovonic Threshold Switch Device with High Temperature Forming Technique". physica status solidi (RRL) – Rapid Research Letters, 30.11.2023. http://dx.doi.org/10.1002/pssr.202300412.
Pełny tekst źródłaWang, Lun, Zixuan Liu, Jiangxi Chen, Zhuoran Zhang, Jinyu Wen, Ruizhe Zhao, Hao Tong i Xiangshui Miao. "Refresh Operation Method for Solving Thermal Stability Issue and Improving Endurance of Ovonic Threshold Switching Selector". Journal of Materials Chemistry C, 2023. http://dx.doi.org/10.1039/d3tc00448a.
Pełny tekst źródłaGu, Rongchuan, Meng Xu, Yongpeng Liu, Yinghua Shen, Chong Qiao, Cai Zhuang Wang, Kai Ming Ho, Songyou Wang, Ming Xu i Xiangshui Miao. "Unravelling the atomic mechanisms of tetrahedral doping in chalcogenide glass for electrical switching materials". Journal of Materials Chemistry C, 2023. http://dx.doi.org/10.1039/d3tc02984k.
Pełny tekst źródłaYuan, Zhenhui, Xiaodan Li, Sannian Song, Zhitang Song, Jiawei Zha, Gang Han, Bingjun Yang, Takehito Jimbo i Koukou Suu. "The enhanced performance of a Si–As–Se ovonic threshold switching selector". Journal of Materials Chemistry C, 2021. http://dx.doi.org/10.1039/d1tc02730a.
Pełny tekst źródłaZhang, Shiqing, Hui Xu, Zhiwei Li, Sen Liu, Bing Song i Qingjiang Li. "A Compact Model of Ovonic Threshold Switch Combining Thermal Dissipation Effect". Frontiers in Neuroscience 15 (9.02.2021). http://dx.doi.org/10.3389/fnins.2021.635264.
Pełny tekst źródłaSeo, Yoori, Jangseop Lee, Sanghyun Ban, Dongmin Kim, Geonhui Han i Hyunsang Hwang. "Improving the selector characteristics of ovonic threshold switch via UV treatment process". Applied Physics Letters 123, nr 24 (11.12.2023). http://dx.doi.org/10.1063/5.0174074.
Pełny tekst źródłaKarpov, Ilya V., David Kencke, Derchang Kau, Stephen Tang i Gianpalo Spadini. "Phase Change Memory with Chalcogenide Selector (PCMS): Characteristic Behaviors, Physical Models and Key Material Properties". MRS Proceedings 1250 (2010). http://dx.doi.org/10.1557/proc-1250-g14-01-h07-01.
Pełny tekst źródłaYap, Suk-Min, I.-Ting Wang, Ming-Hung Wu i Tuo-Hung Hou. "Voltage–Time Transformation Model for Threshold Switching Spiking Neuron Based on Nucleation Theory". Frontiers in Neuroscience 16 (13.04.2022). http://dx.doi.org/10.3389/fnins.2022.868671.
Pełny tekst źródłaWu, Renjie, Rongchuan Gu, Tamihiro Gotoh, Zihao Zhao, Yuting Sun, Shujing Jia, Xiangshui Miao i in. "The role of arsenic in the operation of sulfur-based electrical threshold switches". Nature Communications 14, nr 1 (29.09.2023). http://dx.doi.org/10.1038/s41467-023-41643-6.
Pełny tekst źródłaThesberg, M., Z. Stanojevic, O. Baumgartner, C. Kernstock, D. Leonelli, M. Barci, X. Wang i in. "Monolithic TCAD simulation of phase-change memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) selector device". Solid-State Electronics, październik 2022, 108504. http://dx.doi.org/10.1016/j.sse.2022.108504.
Pełny tekst źródłaAntonelli, Renzo, Guillaume Bourgeois, Simon Martin, Valentina Meli, Niccoló Castellani, Antoine Salvi, Sylvain Gout i in. "Programming operations analysis and statistics in 1S1R OTS+PCM Double‐Patterned Self‐Aligned structure". physica status solidi (RRL) – Rapid Research Letters, 6.02.2024. http://dx.doi.org/10.1002/pssr.202300429.
Pełny tekst źródłaHu, Zeyu, Weidong Zhang, Robin Degraeve, Daniele Garbin, Zheng Chai, Nishant Saxena, Pedro Freitas i in. "New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors". IEEE Transactions on Electron Devices, 2022, 1–7. http://dx.doi.org/10.1109/ted.2022.3231233.
Pełny tekst źródłaSaito, Kentaro, Shogo Hatayama i Yuta Saito. "Modified electronic structure of amorphous Mn‐Si‐Te for OTS application: Improved thermal stability by the formation of Mn‐Te bonding". physica status solidi (RRL) – Rapid Research Letters, 23.02.2024. http://dx.doi.org/10.1002/pssr.202300474.
Pełny tekst źródłaLi, Xiao-Dong, Maoan Tian, Bai-Qian Wang, Nian-Ke Chen i Xian-Bin Li. "Atomic and electronic origin of robust off-state insulation properties in Al-rich AlxTey glass for ovonic threshold switching applications". Journal of Applied Physics 134, nr 20 (28.11.2023). http://dx.doi.org/10.1063/5.0168408.
Pełny tekst źródłaLee, Jaesang, Seong Won Cho, Young Woong Lee, Joon Young Kwak, Jaewook Kim Kim, YeonJoo Jeong, Gyu Weon Hwang, Seongsik Park, SangBum Kim i Suyoun Lee. "Rational engineering of a switching material for the Ovonic threshold switching (OTS) device with mitigated electroforming". Journal of Materials Chemistry C, 2022. http://dx.doi.org/10.1039/d2tc03044f.
Pełny tekst źródłaJia, Shujing, Huanglong Li, Tamihiro Gotoh, Christophe Longeaud, Bin Zhang, Juan Lyu, Shilong Lv i in. "Ultrahigh drive current and large selectivity in GeS selector". Nature Communications 11, nr 1 (15.09.2020). http://dx.doi.org/10.1038/s41467-020-18382-z.
Pełny tekst źródłaChai, Zheng, Weidong Zhang, Sergiu Clima, Firas Hatem, Robin Degraeve, Qihui Diao, Jian Fu Zhang i in. "Cycling induced metastable degradation in GeSe Ovonic threshold switching selector". IEEE Electron Device Letters, 2021, 1. http://dx.doi.org/10.1109/led.2021.3109582.
Pełny tekst źródłaSong, Bing, Hui Xu, Sen Liu, Haijun Liu, Qi Liu i Qingjiang Li. "An ovonic threshold switching selector based on Se-rich GeSe chalcogenide". Applied Physics A 125, nr 11 (24.10.2019). http://dx.doi.org/10.1007/s00339-019-3073-z.
Pełny tekst źródłaGao, Tian, Jie Feng, Haili Ma i Xi Zhu. "The ovonic threshold switching characteristics in SixTe1−x based selector devices". Applied Physics A 124, nr 11 (6.10.2018). http://dx.doi.org/10.1007/s00339-018-2153-9.
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