Gotowe bibliografie tematyczne / Optoelectronics - NCs

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Gotowa bibliografia na temat „Optoelectronics - NCs”

Autor: Grafiati

Data publikacji: 7 września 2023

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Artykuły w czasopismach na temat "Optoelectronics - NCs"

Wang, Xiaoqian, Wanli Liu, Jiazhen He, Yuqing Li i Yong Liu. "Synthesis of All-Inorganic Halide Perovskite Nanocrystals for Potential Photoelectric Catalysis Applications". Catalysts 13, nr 7 (27.06.2023): 1041. http://dx.doi.org/10.3390/catal13071041.

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Compared with conventional semiconductors, halide perovskite nanocrystals (NCs) have a unique crystal structure and outstanding optoelectronic properties, offering wide potential for applications in optoelectronic devices such as solar cells, photodetectors, light-emitting diodes, lasers, and displays. Rational technological design is providing vital support for the development of perovskite optoelectronics. Herein, monodisperse all-inorganic halide perovskite nanocrystals with consistent morphology and cubic crystal phase were synthesized employing a modified one-pot hot injection method to independently modulate the stoichiometric ratios of three precursors involving cesium salt, lead source, and halide. In combination with an anion exchange reaction, mixing two kinds of perovskite NCs with different halogens enables a transition from violet emission to green and finally to red emission over the entire visible region. Additionally, optical and electrochemical tests suggested that the as-synthesized halide perovskite NCs are promising for photoelectric catalysis applications.

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Yang, Liuli, Ting Wang, Qiuhong Min, Chaojie Pi, Fan Li, Xiao Yang, Kongzhai Li i in. "Ultrahigh photo-stable all-inorganic perovskite nanocrystals and their robust random lasing". Nanoscale Advances 2, nr 2 (2020): 888–95. http://dx.doi.org/10.1039/c9na00775j.

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Pinto, S. R. C., P. Caldelas, A. G. Rolo, A. Chahboun i M. J. M. Gomes. "Estimation of Ge nanocrystals size by Raman, X-rays, and HRTEM techniques". Microscopy and Microanalysis 14, S3 (wrzesień 2008): 61–64. http://dx.doi.org/10.1017/s1431927608089393.

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Ge NCs have attracted considerable attention because of their potential applications in nonvolatile memory and integrated optoelectronics. A number of groups have already proposed integrate flash memories based on Ge NCs embedded SiO2 matrix. Since Al2O3 presents a high dielectric constant comparatively to SiO2, it is a good candidate to replace silica in flash memory systems, and therefore improve their performances. Moreover, Al2O3 presents good mechanical properties, and supports high temperature, which leads it to be an ideal material for Si processing conditions. However, a few studies have been reported on Ge NCs embedded in Al2O3 matrix.

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Ghoshal, Sib Krishna, M. R. Sahar, R. Arifin, M. S. Rohani i K. Hamzah. "Surface States and Band Gap Correlation in Silicon Nanoclusters". Advanced Materials Research 1107 (czerwiec 2015): 308–13. http://dx.doi.org/10.4028/www.scientific.net/amr.1107.308.

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Tuning the visible emission of Si nanomaterials by modifying their size and shape is one of the key issue in optoelectronics. The observed optical gain in Si-nanoclusters (NCs) has given further impulse to nanosilicon research. We develop a phenomenological model by combining the effects of surface passivation, exciton states and quantum confinement (QC). The size and passivation dependent band gap, oscillator strength, radiative lifetime and photoluminescence (PL) intensity for NCs with diameter ranging from 1.0 to 6.0 nm are presented. By controlling a set of fitting parameters, it is possible to tune the optical band gap, PL peak and intensity. In case of pure clusters, the band gap is found to decrease with increasing NC size. Furthermore, the band gap increases on passivating the surface of the cluster with hydrogen and oxygen respectively in which the effect of oxygen is more robust. Both QC and surface passivation in addition to exciton effects determine the optical and electronic properties of silicon NCs. Visible luminescence is due to radiative recombination of electrons and holes in the quantum-confined NCs. The role of surface states on the band gap as well as on the HOMO-LUMO states is also examined and a correlation is established. Our results are in conformity with other observations. The model can be extended to study the light emission from other nanostructures and may contribute towards the development of Si based optoelectronics.

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Patnaik, Sumanta Kumar, Sukanta Kumar Triapthy i Surendra Nath Sahu. "Synthesis and characterization of small size fluorescent LEEH caped blue emission ZnTe quantum dots". Materials Science-Poland 35, nr 1 (23.04.2017): 1–5. http://dx.doi.org/10.1515/msp-2017-0012.

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AbstractWe report here for the first time the synthesis of LEEH caped very small size (2 nm) ZnTe quantum dots at low temperature (less than 100 °C) using a simple chemical route. The effects of aging and stirring time on the absorption spectra of the quantum dots were investigated. The synthesized nanocrystal (NC) was characterized by PL, TEM, XRD and the formation of very small size quantum dots having FCC structure was confirmed. Further, blue emission from the prepared sample was observed during exposure to monochromatic UV radiation. ZnTe NCs obtained in this study were found to be more stable compared to those presented in literature reports. ZnTe NCs may be considered as a new material in place of CdTe for optoelectronics devices.

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Liu, Albert, Diogo B. Almeida, Luiz G. Bonato, Gabriel Nagamine, Luiz F. Zagonel, Ana F. Nogueira, Lazaro A. Padilha i S. T. Cundiff. "Multidimensional coherent spectroscopy reveals triplet state coherences in cesium lead-halide perovskite nanocrystals". Science Advances 7, nr 1 (styczeń 2021): eabb3594. http://dx.doi.org/10.1126/sciadv.abb3594.

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Advances in optoelectronics require materials with novel and engineered characteristics. A class of materials that has garnered tremendous interest is metal-halide perovskites, stimulated by meteoric increases in photovoltaic efficiencies of perovskite solar cells. In addition, recent advances have applied perovskite nanocrystals (NCs) in light-emitting devices. It was found recently that, for cesium lead-halide perovskite NCs, their unusually efficient light emission may be due to a unique excitonic fine structure composed of three bright triplet states that minimally interact with a proximal dark singlet state. To study this fine structure without isolating single NCs, we use multidimensional coherent spectroscopy at cryogenic temperatures to reveal coherences involving triplet states of a CsPbI3 NC ensemble. Picosecond time scale dephasing times are measured for both triplet and inter-triplet coherences, from which we infer a unique exciton fine structure level ordering composed of a dark state energetically positioned within the bright triplet manifold.

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Wang, Yen Po, Hsin Chieh Li, Yan Chi Huang i Chih Shan Tan. "Synthesis and Applications of Halide Perovskite Nanocrystals in Optoelectronics". Inorganics 11, nr 1 (11.01.2023): 39. http://dx.doi.org/10.3390/inorganics11010039.

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The perovskites used for optoelectronic devices have been more attractive during recent years due to their wide variety of advantages, such as their low cost, high photoluminescence quantum yield (PLQY), high carrier mobility, flexible bandgap tunability, and high light absorption ability. However, optoelectronic applications for traditional inorganic and organic materials present dilemmas due to their hardly tunable bandgap and instability. On the other hand, there are some more important benefits for perovskite nanocrystals, such as a size-dependent bandgap and the availability of anion exchange at room temperature. Therefore, perovskite NC-based applications are currently favored, offering a research direction beyond perovskite, and much research has focused on the stability issue and device performance. Thus, the synthesis and applications of perovskite NCs need to be thoroughly discussed for the future development of solar cells, light-emitting diodes, photodetectors, and laser research.

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Arumugam, Gowri Manohari, Santhosh Kumar Karunakaran, Raquel E. Galian i Julia Pérez-Prieto. "Recent Progress in Lanthanide-Doped Inorganic Perovskite Nanocrystals and Nanoheterostructures: A Future Vision of Bioimaging". Nanomaterials 12, nr 13 (21.06.2022): 2130. http://dx.doi.org/10.3390/nano12132130.

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All-inorganic lead halide perovskite nanocrystals have great potential in optoelectronics and photovoltaics. However, their biological applications have not been explored much owing to their poor stability and shallow penetration depth of ultraviolet (UV) excitation light into tissues. Interestingly, the combination of all-inorganic halide perovskite nanocrystals (IHP NCs) with nanoparticles consisting of lanthanide-doped matrix (Ln NPs, such as NaYF4:Yb,Er NPs) is stable, near-infrared (NIR) excitable and emission tuneable (up-shifting emission), all of them desirable properties for biological applications. In addition, luminescence in inorganic perovskite nanomaterials has recently been sensitized via lanthanide doping. In this review, we discuss the progress of various Ln-doped all-inorganic halide perovskites (LnIHP). The unique properties of nanoheterostructures based on the interaction between IHP NCs and Ln NPs as well as those of LnIHP NCs are also detailed. Moreover, a systematic discussion of basic principles and mechanisms as well as of the recent advancements in bio-imaging based on these materials are presented. Finally, the challenges and future perspectives of bio-imaging based on NIR-triggered sensitized luminescence of IHP NCs are discussed.

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Sadighian, James C., Michael L. Crawford i Cathy Y. Wong. "Rapid sampling during synthesis of lead halide perovskite nanocrystals for spectroscopic measurement". MRS Advances 4, nr 36 (2019): 1957–64. http://dx.doi.org/10.1557/adv.2019.263.

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ABSTRACTThe photophysical properties of lead halide perovskite nanocrystals (NCs) are critical to their potential application in light emitting devices and other optoelectronics, and are typically characterized using optical spectroscopies. Measurements of nuclei and nascent NC photophysics during synthesis provide insight into how the reaction can be changed to control the properties of the resulting NCs. However, these measurements are typically only performed ex situ after growth is halted by centrifuging the reaction mixture for several minutes. Here, a method is reported to rapidly sample the reaction mixture during a solvation-limited synthesis to enable multiple spectroscopic measurements during nucleation and NC growth. Absorbance and fluorescence measurements of a reaction mixture during the formation of methylammonium lead triiodide perovskite NCs are reported. The changing positions of spectral features as a function of reaction time show the expected weakening of exciton confinement during NC growth. The evolving fluorescence spectra demonstrate that the capping and surface passivation of nascent NCs changes during the reaction. The species in the reaction mixture, particularly during the early stages of the synthesis, are shown to be unstable. This indicates that, even for a relatively slow solvation-limited reaction, the photophysics of the reaction mixture can only be accurately captured if spectroscopic measurements are completed within seconds of sampling. The common use of centrifugation to quench NC syntheses prior to spectroscopic measurement biases the NC population towards more stable, well-capped NCs and does not accurately report on the full NC population in a reaction mixture.

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Żaba, Adam, Svitlana Sovinska, Tetiana Kirish, Adam Węgrzynowicz i Katarzyna Matras-Postołek. "Photodegradation Process of Organic Dyes in the Presence of a Manganese-Doped Zinc Sulfide Nanowire Photocatalyst". Materials 14, nr 19 (6.10.2021): 5840. http://dx.doi.org/10.3390/ma14195840.

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Zinc sulfide (ZnS) nanowires represent a promising candidate in many fields, including optoelectronics and photocatalysis because of their advantages such as excellent optical properties, chemical stability and an easy-scalable simple synthesis method. In this study, an energy-friendly microwave radiation process was used to develop the single-step, solvothermal process for the growth of manganese-doped zinc sulfide (ZnS) and undoped nanocrystals (NCs) in the forms of nanowires using two short amines as a stabilizer, e.g. ethylenediamine and hydrazine, respectively. ZnS nanowires doped with Mn atoms show absorbance in UV and in the visible region of the spectrum. The photocatalytic degradation of rhodamine B in the presence of Mn-doped and undoped ZnS nanocrystals illuminated with only a 6-W UV lamp has been comprehensively studied. The effect of Mn doping and the presence of a nanocrystal stabilizer on the degradation process was determined. It was found that the efficiency of a photocatalytic degradation process was strongly affected by both factors: the doping process of nanowires with Mn2+ atoms and the attachment of ligands to the nanocrystal surface.

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Streszczenia konferencji na temat "Optoelectronics - NCs"

Klimov, Victor I., i Duncan W. McBranch. "Ultrafast Optical Nonlinearities and Carrier Dynamics in Direct- and Indirect-Gap Semiconductor Nanocrystals". W Chemistry and Physics of Small-Scale Structures. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/cps.1997.ctua.3.

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Semiconductor nanocrystals (NCs) exhibit large and fast optical nonlinearities, and efficient photo- and electroluminescence that make them promising materials for applications in optoelectronics and ultrafast optical switching. The nonlinear optical and luminescent properties of NCs are significantly affected by carrier dynamics. Carrier trapping and a nonradiative Auger process are believed to play a major role in the early stages of carrier relaxation, resulting in ultrafast picosecond and subpicosecond dynamics measured in femtosecond pump-probe, photoluminescence (PL) up-conversion, and photoecho experiments.

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Henshaw, Thomas L., Timothy J. Madden, John M. Herbelin, Gerald C. Manke II, Brian T. Anderson, Ralph F. Tate i Gordon D. Hager. "Measurement of gain on the 1.315-μm transition of atomic iodine as produced from the NCl(a1Δ) + I(2P 3/2 ) energy transfer reaction". W Optoelectronics '99 - Integrated Optoelectronic Devices, redaktor Ernest A. Dorko. SPIE, 1999. http://dx.doi.org/10.1117/12.350650.

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Thränhardt, A., C. Schlichenmaier, I. Kuznetsova, S. W. Koch, J. Hader i J. V. Moloney. "Modeling of (GaIn)(NAs) and related laser media". W Integrated Optoelectronic Devices 2006, redaktorzy Marek Osinski, Fritz Henneberger i Yasuhiko Arakawa. SPIE, 2006. http://dx.doi.org/10.1117/12.644019.

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Jian Huang, Ke Tang, Haitao Xu, Jie Zhou, Beiling Yao, Lei Zhang, Yue Zhu, Linyun Shi i Linjun Wang. "Design for open-experimental course of optoelectronic materials and devices". W 2012 First National Conference for Engineering Sciences (FNCES). IEEE, 2012. http://dx.doi.org/10.1109/nces.2012.6543845.

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Tang, Hui, Zemin Yu, Huanyan Xu, Fengchun Wang i Dawei Meng. "Reform of Teaching Methods and Approaches of Optoelectronic Information Material Professional Courses Based on CDIO Mode". W 2012 First National Conference for Engineering Sciences (FNCES). IEEE, 2012. http://dx.doi.org/10.1109/nces.2012.6543626.

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Sen, Qian, Ma Lishuang i Zhu Yao. "Study on spectral response and temperature effect of optoelectronic devices". W 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC). IEEE, 2018. http://dx.doi.org/10.1109/nssmic.2018.8824420.

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Li, Wei, Markus Pessa, Tommy Ahlgren i James Dekker. "Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy". W Symposium on Integrated Optoelectronic Devices, redaktorzy Gail J. Brown i Manijeh Razeghi. SPIE, 2002. http://dx.doi.org/10.1117/12.467665.

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Zhong Pan, Lianhe Li, Yaowang Lin, Zengqi Zhou i Ronghan Wu. "Growth and characterization of Ga(In)NAs on GaAs substrates". W Proceedings of APCC/OECC'99 - 5th Asia Pacific Conference on Communications/4th Optoelectronics and Communications Conference. IEEE, 1999. http://dx.doi.org/10.1109/apcc.1999.820549.

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Nardulli, Alessandro. "ASIPET chip: Low noise optoelectronic integrated readout with n-i-p a-Si:H photodiode array for Positron Emission Tomography". W 2008 IEEE Nuclear Science Symposium and Medical Imaging conference (2008 NSS/MIC). IEEE, 2008. http://dx.doi.org/10.1109/nssmic.2008.4774939.

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