Rozprawy doktorskie: „Nitridation”

1

Vogt, Kirkland W. "Nitridation reactions with hydrazine". Diss., Georgia Institute of Technology, 1994. http://hdl.handle.net/1853/10032.

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Barker, Samuel Paul. "Kinetically-Controlled Nitridation of Titanium Alloys". Cleveland, Ohio : Case Western Reserve University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=case1270136080.

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Thesis (Master of Sciences)--Case Western Reserve University, 2010
Department of Materials Science and Engineering Title from PDF (viewed on 2010-05-25) Includes abstract Includes bibliographical references and appendices Available online via the OhioLINK ETD Center

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3

Dalton, John Christian. "Thermodynamics of Paraequilibrium Carburization and Nitridation of Stainless Steels". Case Western Reserve University School of Graduate Studies / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=case1386586585.

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Kwan, Man-chi. "Mobility enhancement for organic thin-film transistors using nitridation method". Click to view the E-thesis via HKUTO, 2006. http://sunzi.lib.hku.hk/hkuto/record/B37181580.

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Kwan, Man-chi, i 關敏志. "Mobility enhancement for organic thin-film transistors using nitridation method". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B37181580.

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6

Cho, Young Whan. "Synthesis of nitrogen ceramic powders by carbothermal reduction and nitridation". Thesis, University of Cambridge, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.277802.

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7

Ashkin, Alena. "Formation of silicon nitride based materials by nitridation and sintering". Doctoral thesis, Luleå tekniska universitet, 1995. http://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-17425.

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Todays demands on silicon nitride based materials for structural applications focus on microstructures rendering high strengths and reliability at reasonable costs. This work was mainly aimed at production of sialons for these types of applications by nitridation with subsequent sintering. For this purpose both the influence of different factors on sialon formation and the effect of additives in nitriding was studied, as well as different sintering methods. Y-alfa-sialons with x=0.1 to 0.9 in the formula Yx(Sil2-4.5x,Al4.5x)(01.5x,N 16-1.5x) prepared from silicon nitride powders were sintered in different ways. The crystalline phase composition varied from alfa/beta sialon at x=0.2 to alfa sialon at x=0.4 and alfa sialon + polytypes at x=0.8. The highest alfa-sialon content and density was obtained for x=0.4 with an excess of yttria after sintering 1h at 1750°C and post HIPing 1h at 1750°C and 200 MPa. No glass encapsualtion was needed as closed porosity was obtained in the sintering step. Less residual glass was also present after this processing than when just HIPing. Sintering without pressure, however was not enough to densify the material. Sintering experiments by HT-XRD and in a conventional furnace of an x=0.4 alfa-sialon composition without excess yttria, showed that the amount of alfa-sialon formed was relatively insensitive to small changes in composition. Assuming that the formation mechanisms during the early stages of sintering (first 90-120 min) did not change with time and temperature, therefore made it possible to determine the kinetics of alfa-sialon formation. The activation energy was estimated as 330 kJ/mol. The effect of additives on nitridation was studied by adding silica or additives for sialon formation (AlN, Al2O3, Y2O3, CaO) to silicon. Formation of silicon oxynitride in the case of silica additions and sialon in the case of sialon additions was then observed after nitriding. The amounts of sialon formed depended on the liquid phase properties of the different compositions and the nitriding conditions. Fast nitridation resulted in more sialon formation. By nitriding with different schedules it was shown that this formation could be controlled and also that the nitridation could be speeded up when additives were present. Large amounts of additives made the pore size distribution insensitive to nitriding gas composition. The presence of hydrogen in the gas, however, did increase the amount of reaction at low temperatures and thereby influenced the phase composition. Densification of the materials nitrided with silica present was not possible by pressureless sintering and standard glass encapsulated HIPing. Most of the nitrided sialon compositions, on the other hand, sintered well by most sintering methods used at temperatures of 1850°C, and resulted in homogeneous microstructures. Sinter HIPing rendered unusually elongated grains in the (alfa-sialon (x=0.4), while the beta-sialon (z=2) had high grain aspect ratios for all sintering methods. HIPing at 1750°C gave the highest densities in most cases but resulted in inhomogeneities in the alfa-sialon. These looked very similar to inhomogeneities obtained when AlN additive powder with larger grain sizes was used. This work shows that nitridation with subsequent sintering of sialon compositions is a very promising way of manufacturing high performance structural ceramics based on silicon nitride.

Godkänd; 1995; 20070428 (ysko)

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8

Zbyryn, E. M. "Properties of GaN Films Obtained by Nitridation of Porous GaP (001)". Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/34882.

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With the help of nitridation of porous GaP (001) in nitrogen plasma thin films of cubic-GaN were obtained. The conclusion was made that the quality of the GaN films is dependent on the degree of porosity of the GaP substrate. XPS spectra were used to investigate the chemical composition of porous GaP substrates, obtained by electrochemical etching. From XPS measurement we determined that the annealing in atomic nitrogen leads to the formation of GaN films. X-ray diffraction measurements show that cubic GaN on porous GaP substrate has no tensile strain When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/34882

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9

Lan, Song. "High Temperature Nitridation of Powder and Nanocomposite Iron-based Magnetic Alloys". Case Western Reserve University School of Graduate Studies / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=case1527853642053372.

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10

Fletcher, Joseph Patrick III. "Structural investigations of phosphate and aluminofluorophosphate glasses with and without nitridation". Diss., The University of Arizona, 1989. http://hdl.handle.net/10150/184778.

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Knowledge of the structural arrangement of the atoms in a solid is an important prerequisite to a detailed understanding of physical and chemical properties. In this work, structural investigations of phosphate (Ca-P-O) and aluminofluorophosphate (Na/Ba-Al-P-O-F) glasses with and without nitridation were performed. Nitrogen was introduced via metal nitrides (AlN, Ba₃N₂, or Ca₃N₂) or ammonia gas treatment of the melt. These glasses were characterized by chemical, thermal and optical techniques. Infrared, Raman, and MASS NMR spectroscopies were used to determine the local coordination and atomic structure of these glasses. The presence of peaks corresponding to P-O-P and PO₂ molecular vibrations in Ca-P-O glasses provided a basis for proposing a calcium metaphosphate glass structure comprised of long chains. As calcium oxide is added to calcium metaphosphate glasses, the long chains are broken up into shorter pyrophosphate units, as indicated by the presence of PO₃²⁻ terminal groups. MASS NMR of Ba-Al-P-O glasses showed that Al occurs as Al(4), Al(6), and either Al(5) or Al(6) linked through Al-O-Al bonds (such as in α-Al₂O₃). The addition of F in both the Ba-Al-P-O-F and Na-Al-P-O-F systems increases the relative abundance of Al(6). The ³¹P peak maxima in the MASS NMR spectra at about -5 to -10 ppm for Ba-Al-P-O-F-N glasses and -9 to -17 for Na-Al-P-O-F-N glass, indicate that pyrophosphate units dominate the structure of these glassy solids. Raman spectroscopy of a series of Al(PO₃)₃-NaF glasses showed that an increase in NaF content causes a shortening of the P-O-P chains and a more disrupted structural network. The presence of P-O-F units were observed only at the higher (>80 mole %) NaF contents. While the complexity of the Raman spectra make it difficult to confirm the presence of P-N bonding, glasses prepared in an ammonia atmosphere (nitrogen content of 1.6 wt%) suggest the possibility of P-N bonding on the basis of a vibrational peak at 826 cm⁻¹.

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11

Bush, Tamara Louise Deidre. "The reaction of oxygen and nitrogen molecular beams with clean and alkali-metal covered Si(100) surfaces". Thesis, Imperial College London, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.307428.

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12

Раб, Валентина Миколаївна, Валентина Николаевна Раб, Valentyna Mykolaivna Rab i Д. В. Шафорост. "Исследование величины ударной вязкости и твердости от времени выдержки процесса азотирования колеса предвключенного насоса НПВ 3600". Thesis, Сумский государственный университет, 2013. http://essuir.sumdu.edu.ua/handle/123456789/31456.

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Целью исследования является разработка технологических вариантов регулируемых процессов азотирования, которые позволяют обеспечить формирование определенной однородной мелкозернистой структуры и фазового состава азотированного слоя для требуемых физико–механических характеристик колеса предвключенного насоса. При цитировании документа, используйте ссылку http://essuir.sumdu.edu.ua/handle/123456789/31456

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13

柯展東 i Chin-tung David Or. "Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B31226590.

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14

Liu, Lizhi. "Surface Hardening of Titanium Alloys by Gas Phase Nitridation under Kinetic Control". Case Western Reserve University School of Graduate Studies / OhioLINK, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=case1094223428.

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15

Or, Chin-tung David. "Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation /". Hong Kong : University of Hong Kong, 2002. http://sunzi.lib.hku.hk/hkuto/record.jsp?B25151447.

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16

Kuchuk, A., V. Kladko, P. Lytvyn, H. Stanchu, M. Sobancka, A. Wierzbicka, K. Klosek i Z. R. Zytkiewicz. "Correlation between Crystallographic Alignment of Self-induced GaN Nanowires and Features of Si(111) Nitridation". Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35402.

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Formation and spatial ordering of self-induced GaN nanowires grown by molecular beam epitaxy on a spatially pre-nitridazed Si(111) substrate have been studied. It was found the close correlation between Si substrate nitridation parameters and crystallographic alignment of NWs. Conditions for NWs nucleation and in- plane orientation are predefined by a structural anisotropy of silicon nitride nanolayer. Mechanism of NWs orderly emergence suggested. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35402

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17

Murakami, Koji. "Surface modification of high purity iron and stainless steel by aluminization and plasma nitridation". 京都大学 (Kyoto University), 2005. http://hdl.handle.net/2433/144878.

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18

Terner, Mark Robert. "The production of low-cost α-sialons via carbothermal reduction-nitridation of slag-based mixtures". Monash University, School of Physics and Materials Engineering, 2003. http://arrow.monash.edu.au/hdl/1959.1/9577.

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19

Soleimani-Dorcheh, Ali [Verfasser]. "Oxidation-Nitridation of Chromium at High Temperatures and its Mitigation by Alloying / Ali Soleimani-Dorcheh". Aachen : Shaker, 2017. http://d-nb.info/1138178543/34.

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20

Harrison, Robert. "Processing and characterisation of ZrCxNy ceramics as a function of stoichiometry via carbothermic reduction-nitridation". Thesis, Imperial College London, 2015. http://hdl.handle.net/10044/1/24810.

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Carbothermal reduction-nitridation of ZrO2 has been studied in the context of application of non-oxide zirconium ceramics as fuel components in advanced nuclear fuels. Varying processing parameters of nitridation of ZrCx (where 0.7 x 1) powders revealed the rate increased with dwell time, dwell temperature and higher carbon content of the starting ZrCx powders. A novel mechanism is reported whereby nucleation of small ( 500 nm) ZrN containing crystals occurs on the surface of the ZrCx powder particles, growing separate to the carbide particle and resulting in mixed phases. Sintering of the ZrCxNy powders by hot pressing resulted in higher densities than commercially-available ZrC powders suggesting nitrogen content improves the sinterability of ZrC containing ceramics. Thermal and electrical conductivity of the ZrCxNy ceramics were all higher than the ceramics produced from commercially-available ZrC and ZrN powders. Room temperature thermal conductivities of the ZrCxNy ceramics were found to be 35 and 43 Wm-1K-1 for the lowest and highest N-containing ZrCxNy ceramics and increased with temperature to 45 and 55Wm-1K-1 respectively at 2073 K. Electrical conductivities were in the range 250-450 x 104 -1m-1 for the ZrCxNy ceramics (at 298 K) and again increased with increasing nitrogen content. The increase in thermal conductivity of ZrCxNy with nitrogen content is due to the increase in electrical conductivity. Oxidation studies of ZrN revealed oxidation begins at around 773 K with an initial destabilisation of ZrN occurring at around 673 K. A decrease in oxidation rate was observed between lower (973-1073 K) and higher temperatures (1173-1273 K). This is attributed to dense protective oxide scales forming at higher temperature (1173-1273 K) compared to porous oxide scales forming at lower temperature ( 1073 K). However, this protective layer fails at higher temperature (1373 K), attributed to increased oxygen diffusion through the oxide layer.

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21

Davies, Sean. "In-situ optical monitoring of growth processes during the carbon doping and nitridation of GaAs in CBE". Thesis, University of Liverpool, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.399266.

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22

CALICCHIO, LEONARDO. "Efeito do 'Shot peening' sobre a nitretacao de pecas de ferro produzidos por metalurgia do po". reponame:Repositório Institucional do IPEN, 2009. http://repositorio.ipen.br:8080/xmlui/handle/123456789/9428.

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Made available in DSpace on 2014-10-09T12:26:43Z (GMT). No. of bitstreams: 0
Made available in DSpace on 2014-10-09T14:06:14Z (GMT). No. of bitstreams: 0
Dissertacao (Mestrado)
IPEN/D
Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP

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23

Mareš, Petr. "Depozice Ga a GaN nanostruktur na křemíkový a grafenový substrát". Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2014. http://www.nusl.cz/ntk/nusl-231443.

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Presented thesis is focused on the study of properties of Ga and GaN nanostructures on graphene. In the theoretical part of the thesis a problematics of graphene and GaN fabrication is discussed with a focus on the relation of Ga and GaN to graphene. The experimental part of the thesis deals with the depositions of Ga on transferred CVD-graphene on SiO2. The samples are analyzed by various methods (XPS, AFM, SEM, Raman spectroscopy, EDX). The properties of Ga on graphene are discussed with a focus on the surface enhanced Raman scattering effect. Furthermore, a deposition of Ga on exfoliated graphene and on graphene on a copper foil is described. GaN is fabricated by nitridation of the Ga structures on graphene. This process is illustrated by the XPS measurements of a distinct Ga peak and the graphene valence band during the process of nitridation.

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24

Soleimani-Dorcheh, Ali Verfasser], Michael [Akademischer Betreuer] Schütze i Wolfgang [Akademischer Betreuer] [Bleck. "Oxidation-nitridation of chromium at high temperatures and its mitigation by alloying / Ali Soleimani-Dorcheh ; Michael Schütze, Wolfgang Bleck". Aachen : Universitätsbibliothek der RWTH Aachen, 2017. http://d-nb.info/1156923468/34.

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Soleimani-Dorcheh, Ali [Verfasser], Michael Akademischer Betreuer] Schütze i Wolfgang [Akademischer Betreuer] [Bleck. "Oxidation-nitridation of chromium at high temperatures and its mitigation by alloying / Ali Soleimani-Dorcheh ; Michael Schütze, Wolfgang Bleck". Aachen : Universitätsbibliothek der RWTH Aachen, 2017. http://d-nb.info/1156923468/34.

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26

Essary, Chad Robert. "Ultraviolet-assisted oxidation and nitridation of hafnium and hafnium aluminum alloys as potential gate dielectrics for metal oxide semiconductor applications". [Gainesville, Fla.] : University of Florida, 2004. http://purl.fcla.edu/fcla/etd/UFE0006612.

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27

Gu, Xiaoting. "THE SOLUBILITIES OF CARBON AND NITROGEN IN IRON, NICKEL AND TITANIUM-BASED ALLOYS UNDER PARAEQUILIBRIUM CONDITIONS". Case Western Reserve University School of Graduate Studies / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=case1196354589.

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Zangiabadi, Amirali. "Low-temperature interstitial hardening of 15-5 precipitation hardening martensitic stainless steel". Case Western Reserve University School of Graduate Studies / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=case1480769348244855.

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29

Chen, Shang-Che, i 陳尚澤. "Synthesis of Aluminum Nitride Powders via a Two-Stage Plasma Nitridation-Thermal Nitridation Process". Thesis, 2016. http://ndltd.ncl.edu.tw/handle/5arj9j.

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30

Chen, Xi Gui, i 陳錫圭. "Carbothermic nitridation of aluminum oxide". Thesis, 1994. http://ndltd.ncl.edu.tw/handle/55761732262028661873.

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31

黃瀅華. "= Direct nitridation of titanium powder". Thesis, 1998. http://ndltd.ncl.edu.tw/handle/14114134118652624297.

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32

Meng, Ching-hua, i 孟慶華. "Kinetic of Direct Nitridation of Titanium Powder". Thesis, 1999. http://ndltd.ncl.edu.tw/handle/70074306754725820241.

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碩士
國立臺灣科技大學
化學工程系
88
Kinetics on the direct nitridation of titanium pellet by nitrogen gas was studied. The morphology of the partially reacted titanium pellet was studied and the ground powder of solid sample was monitored by an X-ray diffractometer to determine the concentrations of Ti, TiN0.5 and TiN. The experimental variables are: (1)reaction temperature (1,173-1,473K); (2)sample thickness(1.2x10-3-6.38x10-3m) and (3)reaction time(0-18ks). Experimental results indicated that the overall reaction was controlled by chemical reaction when reaction temperature was in the range of 1,173- 1,473K and the pellet thickness was under or equal 1.2x10-3m. As the reaction temperature was 1,373K or 1,473K and the pellet thickness was 6.38x10-3m, the overall reaction was controlled by gas pore diffusion. As the reaction temperature was between 1,173K and 1,473K and the pellet was between 3.0x10-3m and 5.5x10-3m as well as reaction temperature was 1,173K or 1,273K and the pellet thickness was 6.38x10-3m, the overall reaction was controlled by both chemical reaction and gas pore diffusion. A physico-chemical model has been formulated to provide the description of the experimental data. The chemical reaction rate expressions which were used after the model had been employed for interpreting the experimental data. The expression for effective gas diffusivity, which has been left as a fitting parameter for calculation of theoretical prediction was determined as De=1.373x10-5exp(-13,065.7/RT) m2/s The correlation between the geometrical factor, g, and the pellet thickness L was found to be g=1/(1+11.47L)

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33

Tsai, F. M., i 蔡富名. "Kinetics studies on the direct nitridation of silicon powder". Thesis, 1995. http://ndltd.ncl.edu.tw/handle/58782082032676397298.

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34

Huang, Yu-Yuan, i 黃俞淵. "Composition analysis of the ion beam nitridation of Silicon". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/y7eg4n.

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碩士
國立中央大學
機械工程研究所
97
Abstract In recent years, many ways of producing nitride silicon layer has be- en introduced to the world. A way of producing nitride silicon layer by ION BEAM NITRIDATION(IBN) will be discussed in this study. The way of pro- ducing nitride silicon layer by ION BEAM NITRIDATION (IBN) is mainly d- ivided into two conditions-at room temperature and at high temperature and the differences lie in the substrate with or without heating.Traditionally, when heating the substrate to produce the layer, the heat produced durin- g the process would damage the silicon board and cause the impurities r- estructure, and the damage also causes an obstruction to the following micro - electronic producing.【1】【2】【3】 Therefore, in this study, the silicon nitride layer is produced at room temperature by ION BEAM NITRIDATION (IBN) to produce a low tempe- rature silicon nitride layer as well as to get a well-mixed silicon layer. Be- sides, with different experiment parameters, such as different doses and different voltage to speed up the ion beam to investigate the formation of silicon nitride layer is conducted in this study. In this experiment, X-ray P- hotoelectron Spectroscopy(XPS) is used to analyse the changes of varied thickness and the density percentage of nitride silicon layer. Besides, an analysis of full spectrum and in-depth scan in silicon surface of ion beam nitride will also be carried out in this study.

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35

Wu, Li-hwang, i 吳禮煌. "Effect of Iron Additives on the Nitridation of Silicon". Thesis, 1996. http://ndltd.ncl.edu.tw/handle/72296307256302933643.

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碩士
國立中央大學
化學工程學系
84
The nitridation of iron-added silicon powder compacts in a flowing 5% hydrogen /95% nitrogen stream was investigated by a thermal gravimetricanalysis (TGA) technique. The kinetics and the effects of operating variables, including gaseous flow rate, loading of Si compact, iron added, compact forming pressure ,nitrogen comcentration and reaction temperature were extenxively examinated. The analysis of the experiment was conducted by X-ray diffraction (XRD) and scanning electron microscope(SEM). Experimental results indicated that the pri mary progress of nitridation was gas/solid reaction and the major product of silicon nitride was in the form of fine whiskers. From the kinetic analysis, the reaction order of the nitridation was 1.17±0.05 and the activation energyof the reaction was 326±7 kJ/mol.

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Yu, Tso-Hao, i 于作浩. "High temperature oxidation and nitridation of titanium aluminide alloy". Thesis, 1993. http://ndltd.ncl.edu.tw/handle/95919316714454456558.

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楊凱安. "Low temperature plasma-assisted nitridation and oxidation of titanium". Thesis, 1992. http://ndltd.ncl.edu.tw/handle/73134193708708423601.

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Chen, Chen-yueh, i 陳振約. "Nitridation of (001) silicon single crystal under low oxygenatmosphere". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/67590054274490122593.

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碩士
國立中山大學
材料與光電科學學系研究所
101
The article is about the nitridation of (001) silicon single crystal under low oxygen atmosphere filled up of N2/H2 at high temperature. We characterized the composition and microstructure of Si3N4 via X-ray Diffractometer, Scanning Electron Microscopy, Transmission Electron Microscopy, and Energy Dispersive Spectrometer. Moreover, the O2 pressure was measured via Zirconia Oxygen Analyzer to know the role of O2 during nitridation. To summarize, this study analyzed the growth mechanisms of α- and β-Si3N4 in different environments, with changing the reaction temperature, reaction time, and additives. To discuss the growth process of α-Si3N4 nanowires, Si3N4-SiO2 core-shell nanowires, Si3N4-SiO2 mixture layer, and β-Si3N4 crystal, our research suggested two models for the nitridation of (001) silicon single crystal under low oxygen atmosphere.

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Matizamhuka, Wallace R. "Development of a potentially hard Ta1-xZr1+O1+xN1-x material". Thesis, 2008. http://hdl.handle.net/10539/4945.

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Abstract Theoretical investigations on the ZrxTa1-xO1+xN1-x system predict that some of its phases are likely to possess relatively high hardness values.(1) Such materials may be suitable for industrial application as cutting tools. The motive of the project was to investigate the best synthesis route and a method for obtaining well sintered, dense oxynitride phases with a nominal composition TaON (x=0), Ta0.8Zr0.2O1.2N0.8 (x=0.2) and Ta0.3Zr0.7O1.7N0.3 (x=0.7). This was achieved through three main steps, i.e. synthesis of the oxynitride powders, high pressure sintering and evaluation of mechanical properties. A sol gel method was used to obtain the precursor oxide powders. TaCl5 and 70wt% zirconium propoxide were used as the starting materials. Oxide gels were formed by dissolving precursor materials in absolute ethanol for 15minutes with continuous stirring, followed by subsequent hydrolysis to form gels which were aged for 24hrs at 800C. The gels were dried in air at 1000C for 12hrs in a drying oven followed by calcinations in a muffle furnace at 6000C for 6hrs to remove the alkyls and chloride ions. High surface area amorphous powders were obtained (~6.60 ± 0.02 m2/g in the case of Ta2O5) after milling with 4mm steel balls for 4hrs in a planetary mill. The respective oxynitrides were obtained by thermal nitridation using an ammonia (99.99%) flow method. A temperature of 9000C maintained for 4hrs in the presence of water vapour at an ammonia flow rate of 50cm3/min were found to be the optimum nitridation conditions. The water vapour pressure was realised by bubbling the ammonia through a water bath at room temperature prior to supply to the furnace. The water vapour pressure of such a set up was approximated to be ~3.1*103Pa. This nitridation process was carried out in a tube furnace using a silica tube of length 1200mm and external diameter of 40mm and an alumina boat as the holding vessel. Approximately 2g of oxide powder were used for each run. The dependency of nitridation on temperature and ammonia flow rate iii was investigated for the formation of TaON. Pure TaON formation was found to be more favoured by temperatures of 9000C with a heating rate of 200C/min and by an ammonia flow rate range of 40-50cm3/min. These conditions were also used for the mixed Ta-Zr oxynitrides. Ta0.3Zr0.7O1.7N0.3 formation was found to be dependent on the heating rate with ZrO2 forming beside the oxynitride solid solution above a heating rate of 100C/min. In the present work the phenomenon has been found to be dependent on the kinetics of the crystallisation reactions. At higher heating rates crystallisation of the separate phases is favoured leading to the formation of separate phases. On the other hand with an optimum heating rate the solid solution is maintained to the final nitridation temperature. The powders were found to be thermally stable in air above 6000C with TaON being the most stable with a weight change occurring at a temperature of ~6900C. The powders were stable in pure nitrogen well above 10000C. Sintering in a hot press in the temperature range of 900-14000C at a heating rate of 500C/min and a pressure range of 50-85MPa using previously heat treated h-BN crucibles in argon resulted in porous, partially densified materials. A maximum % theoretical density of 81.6% was obtained for TaON at 10000C and 85MPa pressure applied for 1hr. TaON oxidised to Ta2O5 above 10000C with an oxide phase transition being observed above 13000C. High pressure sintering was carried out in the temperature and pressure regime of 920- 12000C and 3-5.5GPa respectively in the case of TaON. The mixed Ta-Zr oxynitrides were sintered at 3GPa at a temperature of 11000C. No phase transitions were observed in all cases. An average hardness value of ~16.8GPa and fracture toughness of ~3.4MPam1/2 were obtained for the TaON phase. Ta0.3Zr0.7O1.7N0.3 and Ta0.8Zr0.2O1.2N0.8 were found to possess hardness values of 13.4GPa and 13.02GPa respectively under the same sintering conditions. It was observed that the hardness values obtained for TaON are higher than those for ZrO2 or HfO2 ceramics, due to the stronger covalent bonding in nitrogen present in TaON. On the other hand the fracture toughness values are as low as those of fully stabilised ZrO2 materials due to lack of phase transformation toughening.

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40

Wang, Tsai-Chen 1965. "High temperature fluidized-bed nitridation of 316 stainless steel powder". Thesis, 1996. http://hdl.handle.net/1957/34443.

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41

Chang, Tsung-Hsien, i 張宗憲. "Study of Nitridation on Floating Gate for Nonvolatile Memory Devices". Thesis, 2002. http://ndltd.ncl.edu.tw/handle/24307782979217963803.

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碩士
國立清華大學
工程與系統科學系
90
`In this thesis, nitridation on floating gate of nonvolatile memory devices is used to improve tunneling oxide quality and reliability. Samples, nitridized by NH3 with additional N2O annealing on poly-oxynitride (poly I) and then deposited with a CVD TEOS and a post deposition RTA N2O annealing, show excellent electrical properties in term of electric breakdown field, charge to breakdown, low electron trapping rate, and reliability characteristics. In addition, the CVD TEOS oxide deposited on the phosphorus in-situ doped polysilicon nitrided with NH3 and followed with an N2O RTA treatment shows better performance inter-dielectric than control samples. This structure is a very promise for the interpoly dielectric of EEPROM and flash memory devices.

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42

Horng, Wei-Jainn, i 洪維健. "Effect of Metal oxide Additives on the Nitridation of Silicon". Thesis, 1998. http://ndltd.ncl.edu.tw/handle/47300183021033773974.

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碩士
國立中央大學
化學工程學系
86
ABSTRACT The nitridation of metal oxide added silicon powder compacts to produce silicon nitride in a flowing 5% hydrogen/95% nitrogen streamwas investigated by a thermal gravimetric analysis(TGA) technique.Thereaction kinetics effect of operation variables, including kinds of metaloxide added, gaseous flow rate, amount of ferric oxide added, compactforming pressure, nitrogen concentration and reaction trmperature on the nitridation were extensively examined.The analysis of the experiment was conducted by X-ray diffraction (XRD) and scanning electronmicroscope(SEM). Experimental results indicated that the order of the three metaloxides added effect on the intridation rate is Fe2O3>Cr2O3>CaO.Whenthe flow rate excceded 300ml/min,the external gas film was negligible.The proper ferric metal added in silicon powder would significantlypromote the nitridation rate and the yield of silicon nitride.In addition, the reaction rate and conversion could be increased by decreasing thereaction temperature, increasing the nitrogen concentration and thereaction temperature.Moreover, the primary progress of nitridation wasthe gas/solid reaction and the major product of silicon nitride wsa in the form of fine whiskers.From the kinetic analysis,we found that the reacton order fo the nitridation was 1.51 ans the activation energy of the reaction was 617.8kJ/mol.

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43

Hsiao, Fu-Chien, i 蕭富謙. "Nitridation of Titanium Films by Atmospheric-Pressure Microwave Plasma Torch". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/77114964662078162369.

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碩士
國立高雄應用科技大學
化學工程系碩士班
96
Titanium nitride films were prepared by nitridation of titanium films using an atmospheric-pressure microwave plasma torch. Titanium films were deposited on glass by magnetron sputtering. After that, the nitrogen containing 0.08% hydrogen as a reactive gas was used in plasma torch at 450C for 2.5 to 30 mins. The color of specimens changed from silver-grey to golden after plasma nitridation. The as-deposited titanium films were (100) and (002) preferred orientation, and turned to titanium nitride with (111) preferred orientation above 10 mins after plasma nitridation. The surface morphology of the films was investigated by SEM and AFM. All values of surface roughness was about 2 nm, which indicated the very smooth surface was sustained. The electrical resistivity of as-deposited films was 2.5 μΩ-cm and increased to 4.5 μΩ-cm after plasma nitridation. The chemical state of nitridation films was conducted by X-ray photoelectron spectroscopy. The surface was amorphous TiO2 (458.0 eV) and TiNxOy (456.5 eV), additional TiN (455.0 eV) signals appeared after sputtering. The titanium nitride films were successfully prepared using atmospheric-pressure microwave plasma for nitridation of titanium films. Moreover, the atmospheric-pressure microwave plasma has high-speed and low-cost for preparing the nitride films, which can be extend to other nitrides, such as chromium nitride and zirconium nitride.

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44

Fan, Kung Ming, i 范恭鳴. "Multiple-gate-oxide-thickness Process Development by NH3 Plasma Nitridation". Thesis, 2002. http://ndltd.ncl.edu.tw/handle/61329243704455919302.

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碩士
長庚大學
半導體研究所
90
Abstract According to the ITRS prediction, the equivalent oxide thickness (EOT) will be scale to 0.9-1.4nm in the 90nm technology node. As the oxide thickness less than 3nm, the gate leakage current and boron penetration through oxide are more seriously. Replace the SiO2 by High-k dielectric materials and nitrogen implant in the silicon surface or dielectrics are the most popular approaches to overcome these two issues. SOC is the current trend for the future CMOS processes, but it increases the process complexity, one of these challenges is the multiple gate oxide thickness, which in order to have lower power consumption, high speed and circuit stability. Oxidation growth rate can be reduced by nitrogen implant in the silicon substrate and have being widely employed. In this thesis, nitrogen incorporated in the silicon surface by NH3 plasma. We discussed its oxidation growth rate and electrical characteristics of MOS capacitors. The oxidation growth rate can be reduced maximum about 80﹪compare to the control sample. Besides, we improved its oxide quality by NH3 plasma treatment compared to the direct rapid thermal (RT) N2O oxidation. We find that the low charge trapping, low bulk trap densities, higher immunity to SILC and higher charge to soft-breakdown by NH3 plasma treatment before RT N2O oxidation. In this experiment, gate voltage shift has a minimum value of 10 mV in constant current stress and negligible hysteresis effects of C-V characteristic, the flatband voltage shift is 8.5 mV. This process could achieve both multiple gate oxide thickness and improve oxide reliability.

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45

Hao-YuChen i 陳澔瑜. "Electrochemical nitridation of 316L stainless steel for PEMFC bipolar plates". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/66677231252253333458.

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碩士
國立成功大學
化學工程學系碩博士班
101
Bipolar plates are one of the most important components in PEMFC. To support membrane electrode assembly (MEA) and connecting single cells, stainless steels are promising candidates because of its mechanical strength, high conductivity, and of course, relatively low cost. However, one of the drawbacks of stainless steel bipolar plates is the high interfacial contact resistance (ICR) due to their surface oxide film. Though providing good protection for the base alloy from further corrosion, the oxide film will definitely decrease the conductivity. Commercially available 316L steel shows high ICR and high corrosion resistance in simulated PEMFC environments. In this work, 316L steel was electrochemically nitrided to form a corrosion-resistant and electrically conductive chromium nitride film. To assist the formation of chromium nitride layer, steels were first acid washed in 3.0M HNO3 solution at 70°C for 2 hours to improve the Cr/Fe ratio. Then the steels were electrochemically nitrided in a mixture of HNO3 and KNO3 solutions at room temperature to obtain the surface chromium nitride film. In the simulated PEMFC tests, the steel which had been acid-washed and electrochemically nitrided in 0.1M HNO3 + 0.5M KNO3 at -0.25V for 2 hours showed the lowest current. The results of simulated cathode and anode tests were 23.3 and -30.7 nA/cm2. And the ICR of the nitrided steel decreased to 16.7mΩ-cm2. With such outstanding performances in these tests, it is clear that electrochemical nitridation is a promising way to modify stainless steel for PEMFC bipolar plates.

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46

謝長峯. "Study of Titanium Nitride Thin Films by Microwave Plasma Formed Nitridation". Thesis, 2004. http://ndltd.ncl.edu.tw/handle/55658127536028733846.

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碩士
國立臺灣科技大學
材料科技研究所
92
An electrode materials for breakdown voltage protection devices has been tested. Titanium nitride has been chosen as the electrode material, which was prepared by sputter deposition of Titanium thin film , followed by surface nitridation in a microwave plasma. The result electrode became multi-layer of TiN/Ti The parameters of microwave plasma for growing Titannium Nitride are RF power 300W, working pressure 5 torr. It shows no advantage in Nitridation for breakdown measurement when we increase Nitridation time. The results also show the Titanium Nitride can not decrease breakdown voltage in comparison with titanium, but it can increase the reliability of the electrode. However when we increase the nitridation temperature form 580℃ to 630℃, it not only let the titanium become nitride on the surface but also let the titanium reactive with silicon and become TiN/Ti/TiSi2.

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47

Hsu, Ron-Kai, i 許榮凱. "The XPS Analysis of GaN by N2+ Ion Beam Nitridation GaAs". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/mbjnjc.

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碩士
國立中央大學
材料科學與工程研究所
97
Abstract 　　Because of its good physical properties, GaN becomes an important m- aterial that is widely used on various dimensions. Nowadays, many techniq- ues are taken to produce GaN, such as MOCVD, MBE, etc. However, due to there are large lattice mismatch between substrates and GaN layer, by using nitridation of GaAs to form a buffer layer before producing GaN on the subs- trate is an alternative in recent years. 　　In the experiment, ion beam nitridation of GaAs using two different vol- tages of N2+ ion beam fixed in 10 keV and 5 keV , the ion beam current dens- ity from 2 to 4 μA and fixed three different doses are used to nitridation of GaAs. An X photoelectron spectroscopy (XPS) is used to do the analysis here. Argon ion beam clean carbon and oxygen pollutants form a surface of gallium -rich on gallium arsenide. According to the analysis, it is found that the higher the voltage of gallium ion beam is, the thicker the film of GaN is, and the gre- ater the dose is, the film of GaN is also thicker. 　　Compared with other references, the thickness of GaN films in this expe- riment has little difference with their results. Therefore, the experiment para- meter of the thickness of GaN film in this experiment is reliable.

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48

Zeng, Wen Hong, i 曾文宏. "Synthesize aluminium nitride from carbothermal reduction & nitridation of aluminium hydroxide". Thesis, 1994. http://ndltd.ncl.edu.tw/handle/47783247357525260525.

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49

Lin, Wen-Wei, i 林文偉. "Effect of alkaline earth fluoride additives on the nitridation of silicon". Thesis, 1997. http://ndltd.ncl.edu.tw/handle/69224786212333641084.

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碩士
國立中央大學
化學工程學系
85
The nitridation of alkaline earth fluoride added silicon powder compacts to produce silicon nitride in a flowing 5% hydrogen / 95% nitrogen stream was investigated by a thermal gravimetric analysis (TGA)technique. The effect of operating variables, including kinds of alkalineearth fluorides added, gaseous flow rate, amount of barium fluoride added,compact forming pressure, nitrogen concentration and reaction temperatureon the nitridation were extensively examined. The analysis of the experiment was conducted by X-ray diffraction (XRD) and scanning electron microscope.(SEM). Experimental results indicated that the order of three alkaline earthfluorides added effect on the nitridation rate is BaF2> MgF2>CaF2.Changing the gaseous flow rate had no influence on the reaction. The proper barium fluoride added in silicon powder would singnificantly promote the nitridation rate and the yield of silicon nitride. In addition, thereaction rate could be increased by decreasing the compact forming pressure, increasing the nitrogen concentration and the reaction temperautre. Moreover, the primary progress of nitridation was thegas/solid reaction and the major product of silicon nitride was in the formof fine whiskers. From the kinetic analysis, we found that the reaction order of the nitridation was 1.47 ± 0.05 and the activation energy of thereaction was 559.2 ± 7 kJ/mol.

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50

Heidlage, Michael Gregory. "Sustainable ammonia synthesis via thermochemical reaction cycle". Diss., 2018. http://hdl.handle.net/2097/38948.

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Doctor of Philosophy
Department of Chemical Engineering
Peter H. Pfromm
Since its inception, the Haber-Bosch (HB) process for ammonia (NH3) synthesis has allowed for a significant increase in global food production as well as a simultaneous decrease in global hunger and malnutrition. The HB process is estimated to be responsible for the subsistence of 40% of the world population as approximately 85% of the over 182 metric tons of NH3 produced in 2017 was used as fertilizer for crop production. The natural gas consumed (mostly to generate H2) represents approximately 2% of the global energy budget, while the CO2 produced is about 2.5% of all global fossil CO2 emissions. Approximately 40% of food consumed is essentially natural gas transformed by the HB process into agricultural products. However global food production will need to double due to expected increase in world population to 9.6 billion by 2050 and rising demand for protein among developing nations. A novel thermochemical reaction cycle for sustainable NH3 synthesis at atmospheric pressure is explored herein. Both thermochemical and kinetic rationales are discussed regarding choice of Mn as the cycled reactant. The energetic driving force for these reactions is conceptually derived from concentrated solar energy. Mn was reacted with N2 forming Mn-nitride, corrosion of Mn-nitride with steam at 500 °C formed MnO and NH3, and lastly MnO was reduced at 1150 °C in a 4 vol % CH4 – 96 vol % N2 stream to Mn-nitride closing the cycle. Optimum nitridation at 800 °C and 120 min produced a Mn6N2.58-rich Mn-nitride mixture containing 8.7 ± 0.9 wt. % nitrogen. NH3 yield was limited to 0.04 after 120 min during nitride corrosion but addition of a NaOH promotor improved NH3 yield to 0.54. Mn6N2.58 yield was 0.381 ± 0.083 after MnO reduction for 30 min with CO and H2 but no CO2 detected in the product. Mn-nitridation kinetics were investigated at temperatures between 600 and 900 °C for 10 and 44 μm reactant powder particle sizes. That equilibrium conversion decreased with increasing temperature was confirmed. Jander’s rate law, which assumes gaseous reactant diffusion through a solid product layer, described the experimental data reasonably well. The rate constants and initial rates were as much as an order of magnitude greater for the 10 μm Mn reactant particle size. Additionally the activation energy was found to be 44.1 kJ mol-1 less for the 10 μm reactant particle size. Reducing the particle size had a small but positive effect on Mn-nitridation kinetics. Further reducing particle size will likely have a greater impact. A review of relevant classical thermodynamics is discussed with special attention paid to open systems. Confidence issues regarding over-reliance on x-ray diffraction are considered with options suggested for mitigation. Opportunities for future work are assessed.

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