Artykuły w czasopismach: „Near-field scanning optical lithography”

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Wegscheider, S., A. Kirsch, J. Mlynek i G. Krausch. "Scanning near-field optical lithography". Thin Solid Films 264, nr 2 (sierpień 1995): 264–67. http://dx.doi.org/10.1016/0040-6090(95)05818-4.

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Credgington, Daniel, Oliver Fenwick, Ana Charas, Jorge Morgado, Klaus Suhling i Franco Cacialli. "High-Resolution Scanning Near-Field Optical Lithography of Conjugated Polymers". Advanced Functional Materials 20, nr 17 (6.07.2010): 2842–47. http://dx.doi.org/10.1002/adfm.201000202.

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Sun, Shuqing, Karen S. L. Chong i Graham J. Leggett. "Nanoscale Molecular Patterns Fabricated by Using Scanning Near-Field Optical Lithography". Journal of the American Chemical Society 124, nr 11 (marzec 2002): 2414–15. http://dx.doi.org/10.1021/ja017673h.

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Tseng, Ampere A. "Recent developments in nanofabrication using scanning near-field optical microscope lithography". Optics & Laser Technology 39, nr 3 (kwiecień 2007): 514–26. http://dx.doi.org/10.1016/j.optlastec.2005.11.002.

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Cotton, Daniel V., Christopher J. Fell i Paul C. Dastoor. "Fabricating semi-conducting polymer photonic structures via near-field scanning optical lithography". Synthetic Metals 159, nr 5-6 (marzec 2009): 456–61. http://dx.doi.org/10.1016/j.synthmet.2008.11.007.

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Micek, Patrik, Dusan Pudis, Peter Gaso, Jana Durisova i Daniel Jandura. "Microring Zone Structure for Near-Field Probes". Coatings 11, nr 11 (5.11.2021): 1363. http://dx.doi.org/10.3390/coatings11111363.

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Recent advances in Surface Plasmon Resonance (SPR) technologies have shown the possibility of transmission enhancement of localized modes propagating through sub-diffraction wide slits and apertures, resulting in the strong near-field focusing of metallic planar nanostructures. This work presents a new approach to the fabrication of high-resolution near-field optical probes using 3D lithography in combination with numerical finite difference time domain (FDTD) simulations. A narrow 500 nm depth of field focus area was observed both by numerical analysis and near field scanning optical microscopy (NSOM) measurements. Further research and optimization are planned in order to achieve subwavelength focal regions and increased signal intensities.

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Falcón Casas, Ignacio, i Wolfgang Kautek. "Subwavelength Nanostructuring of Gold Films by Apertureless Scanning Probe Lithography Assisted by a Femtosecond Fiber Laser Oscillator". Nanomaterials 8, nr 7 (16.07.2018): 536. http://dx.doi.org/10.3390/nano8070536.

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Optical methods in nanolithography have been traditionally limited by Abbe’s diffraction limit. One method able to overcome this barrier is apertureless scanning probe lithography assisted by laser. This technique has demonstrated surface nanostructuring below the diffraction limit. In this study, we demonstrate how a femtosecond Yb-doped fiber laser oscillator running at high repetition rate of 46 MHz and a pulse duration of 150 fs can serve as the laser source for near-field nanolithography. Subwavelength features were generated on the surface of gold films down to a linewidth of 10 nm. The near-field enhancement in this apertureless scanning probe lithography setup could be determined experimentally for the first time. Simulations were in good agreement with the experiments. This result supports near-field tip-enhancement as the major physical mechanisms responsible for the nanostructuring.

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Lin, Y., M. H. Hong, W. J. Wang, Y. Z. Law i T. C. Chong. "Sub-30 nm lithography with near-field scanning optical microscope combined with femtosecond laser". Applied Physics A 80, nr 3 (luty 2005): 461–65. http://dx.doi.org/10.1007/s00339-004-3093-0.

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Smolyaninov, Igor I. "Scanning Probe Microscopy of Surface Plasmons". International Journal of Modern Physics B 11, nr 21 (20.08.1997): 2465–510. http://dx.doi.org/10.1142/s021797929700126x.

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Recent development of novel scanning probe techniques such as Scanning Tunneling Microscopy (STM), Atomic Force Microscopy (AFM), and Near-Field Optical Microscopy (NFOM) has opened new ways to study local field distribution of surface electromagnetic waves. A lot of experimental efforts have been concentrated on the study of surface plasmons (SP). Different techniques allow to excite and probe SPs with wavelengths from 1 nm down to the optical range along its entire dispersion curve. Large number of phenomena have been studied directly, such as SP scattering by individual defects, strong and weak localization of SP, SP induced local field enhancement, light emission from the tunneling junction, etc. Scanning probe techniques allow not only topography and field mapping but also surface modification and lithography on the nanometer scale. Combination of these features in the same experimental setup proved to be extremely useful in SP studies. For example, some prototype two dimensional optical elements able to control SP propagation have been demonstrated.

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Cotton, Daniel V., Christopher J. Fell, Warwick J. Belcher i Paul C. Dastoor. "The origin of fine structure in near-field scanning optical lithography of an electroactive polymer". Journal of Physics D: Applied Physics 41, nr 19 (19.09.2008): 195107. http://dx.doi.org/10.1088/0022-3727/41/19/195107.

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Roszkiewicz, Agata, Amrita Jain, Marian Teodorczyk i Wojciech Nasalski. "Formation and Characterization of Hole Nanopattern on Photoresist Layer by Scanning Near-Field Optical Microscope". Nanomaterials 9, nr 10 (12.10.2019): 1452. http://dx.doi.org/10.3390/nano9101452.

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Patterning of lines of holes on a layer of positive photoresist SX AR-P 3500/6 (Allresist GmbH, Strausberg, Germany) spin-coated on a quartz substrate is carried out by using scanning near-field optical lithography. A green 532 nm-wavelength laser, focused on a backside of a nanoprobe of 90 nm diameter, is used as a light source. As a result, after optimization of parameters like laser power, exposure time, or sleep time, it is confirmed that it is possible to obtain a uniform nanopattern structure in the photoresist layer. In addition, the lines of holes are characterized by a uniform depth (71–87 nm) and relatively high aspect ratio ranging from 0.22 to 0.26. Numerical modelling performed with a rigorous method shows that such a structure can be potentially used as a phase zone plate.

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Foglietti, V., E. Cianci i G. Giannini. "Progress toward the fabrication of scanning near field optical probe: pattern definition by e-beam lithography". Microelectronic Engineering 57-58 (wrzesień 2001): 807–11. http://dx.doi.org/10.1016/s0167-9317(01)00483-x.

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Backer, Scott A., Itai Suez, Zachary M. Fresco, Jean M. J. Fréchet, Josh A. Conway, Shantha Vedantam, Hyojune Lee i Eli Yablonovitch. "Evaluation of new materials for plasmonic imaging lithography at 476 nm using near field scanning optical microscopy". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 25, nr 4 (2007): 1336. http://dx.doi.org/10.1116/1.2757184.

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Credgington, Daniel, Oliver Fenwick, Ana Charas, Jorge Morgado, Klaus Suhling i Franco Cacialli. "Conjugated Polymers: High-Resolution Scanning Near-Field Optical Lithography of Conjugated Polymers (Adv. Funct. Mater. 17/2010)". Advanced Functional Materials 20, nr 17 (8.09.2010): n/a. http://dx.doi.org/10.1002/adfm.201090074.

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Arena, A., F. Bonsignore, S. Patanè i G. Saitta. "Optical Properties of Laser-dye-doped Polyvinylcarbazole Films Coated with Polycarbonate". Journal of Materials Research 17, nr 6 (czerwiec 2002): 1490–94. http://dx.doi.org/10.1557/jmr.2002.0221.

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Spectrophotometry in the ultraviolet-visible-infrared range was used to investigate the optical properties of polymer bilayers obtained by spin coating polycarbonate films about 1 μm thick on top of pyrromethene-doped polyvinylcarbazole (PVK) layers deposited on glass. Due to the light confinement in the PVK plane, the laser-dye photoluminescence collected along the polymer plane was linearly polarized and shifted from green to yellow according to the active film thickness. To laterally contain light, microstructures were imprinted on laser-dye-doped PVK films by soft lithography. The photoluminescence coming out of a microstructured film and the film topography were analyzed by scanning near-field optical microscopy.

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Ding, Li, Jin Qin, Yang Chen i Liang Wang. "Numerical and experimental study of near-field scanning optical lithography using nanoscale bowtie apertures with ultrasmall gap size". Journal of Micro/Nanolithography, MEMS, and MOEMS 15, nr 3 (29.09.2016): 031611. http://dx.doi.org/10.1117/1.jmm.15.3.031611.

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Cotton, Daniel V., Christopher J. Fell, Warwick J. Belcher i Paul C. Dastoor. "Real poly(p-phenylene vinylene) features from near-field scanning optical lithography and the implications for further modelling". Journal of Physics D: Applied Physics 48, nr 32 (10.07.2015): 325101. http://dx.doi.org/10.1088/0022-3727/48/32/325101.

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Inglis, William, Martyn C. Davies, Clive J. Roberts, Saul J. B. Tendler i Philip M. Williams. "Micro-Patterning of Polymers for High Resolution Microscopy Analysis". Microscopy and Microanalysis 7, S2 (sierpień 2001): 128–29. http://dx.doi.org/10.1017/s1431927600026714.

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Micro-patterned surfaces are of interest in biology and chemistry due to the ability to confine functional sample materials to specific areas. If patterns are visible, either through optical microscopy, or topographically, with scanning probe microscopy, investigating samples in a manner that is cheap and accessible to most laboratories is possible. Examples include micropatterning cells in tissue engineering, and protein micro-array analysis. We have created a micro-patterned surface with tailored optical and topographic properties. These were investigated using the microscopy techniques, confocal microscopy (CM), atomic force microscopy (AFM) and near field scanning optical microscopy (NSOM). AFM and CM were used to investigate different aspects of the micro-pattern. to confirm the properties of the micro-pattern, we show the advantages of NSOM in investigating surfaces with both optical and topographic properties simultaneously. Micro-patterns were fabricated using a soft lithography technique, micro-contact printing, where reagents are ‘stamped’ upon substrates using an elastomeric moulding of a micro-template.

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Madsen, S., S. I. Bozhevolnyi, K. Birkelund, M. Müllenborn, J. M. Hvam i F. Grey. "Oxidation of hydrogen-passivated silicon surfaces by scanning near-field optical lithography using uncoated and aluminum-coated fiber probes". Journal of Applied Physics 82, nr 1 (lipiec 1997): 49–53. http://dx.doi.org/10.1063/1.365847.

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Kwon, S. J., Y. M. Jeong i S. H. Jeong. "Fabrication of high-aspect-ratio silicon nanostructures using near-field scanning optical lithography and silicon anisotropic wet-etching process". Applied Physics A 86, nr 1 (27.10.2006): 11–18. http://dx.doi.org/10.1007/s00339-006-3744-4.

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Lin, Zhenyuan, i Minghui Hong. "Femtosecond Laser Precision Engineering: From Micron, Submicron, to Nanoscale". Ultrafast Science 2021 (1.12.2021): 1–22. http://dx.doi.org/10.34133/2021/9783514.

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As a noncontact strategy with flexible tools and high efficiency, laser precision engineering is a significant advanced processing way for high-quality micro-/nanostructure fabrication, especially to achieve novel functional photoelectric structures and devices. For the microscale creation, several femtosecond laser fabrication methods, including multiphoton absorption, laser-induced plasma-assisted ablation, and incubation effect have been developed. Meanwhile, the femtosecond laser can be combined with microlens arrays and interference lithography techniques to achieve the structures in submicron scales. Down to nanoscale feature sizes, advanced processing strategies, such as near-field scanning optical microscope, atomic force microscope, and microsphere, are applied in femtosecond laser processing and the minimum nanostructure creation has been pushed down to ~25 nm due to near-field effect. The most fascinating femtosecond laser precision engineering is the possibility of large-area, high-throughput, and far-field nanofabrication. In combination with special strategies, including dual femtosecond laser beam irradiation, ~15 nm nanostructuring can be achieved directly on silicon surfaces in far field and in ambient air. The challenges and perspectives in the femtosecond laser precision engineering are also discussed.

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Braun, Kai, Florian Laible, Otto Hauler, Xiao Wang, Anlian Pan, Monika Fleischer i Alfred J. Meixner. "Active optical antennas driven by inelastic electron tunneling". Nanophotonics 7, nr 9 (7.09.2018): 1503–16. http://dx.doi.org/10.1515/nanoph-2018-0080.

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AbstractIn this review, we focus on the experimental demonstration of enhanced emission from single plasmonic tunneling junctions consisting of coupled nano antennas or noble metal tips on metallic substrates in scanning tunneling microscopy. Electromagnetic coupling between resonant plasmonic oscillations of two closely spaced noble metal particles leads to a strongly enhanced optical near field in the gap between. Electron beam lithography or wet chemical synthesis enables accurate control of the shape, aspect ratio, and gap size of the structures, which determines the spectral shape, position, and width of the plasmonic resonances. Many emerging nano-photonic technologies depend on the careful control of such localized resonances, including optical nano antennas for high-sensitivity sensors, nanoscale control of active devices, and improved photovoltaic devices. The results discussed here show how optical enhancement inside the plasmonic cavity can be further increased by a stronger localization via tunneling. Inelastic electron tunneling emission from a plasmonic junction allows for new analytical applications. Furthermore, the reviewed concepts represent the basis for novel ultra-small, fast, optically, and electronically switchable devices and could find applications in high-speed signal processing and optical telecommunications.

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Onuki, Teppei, Takashi Tokizaki, Hirotaka Ojima, Jun Shimizu i Li Bo Zhou. "Improvement in Oxide-Pattern Sizes Controllability on Scanning Probe Nanolithography". Advanced Materials Research 126-128 (sierpień 2010): 701–6. http://dx.doi.org/10.4028/www.scientific.net/amr.126-128.701.

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Pattern size controllability of SPM-based nano-lithography especially in vertical direction was improved using in-situ height and depth measurements at the processed point. The transient oxide growth was monitored by light transmission (depth of the oxide in sample metal surface) and topographical signals measurements obtained from a scanning near-field optical microscope. First, we investigated oxidizing rate limitation on titanium film. At the voltage rise faster than 10 V/sec, the depth growth didn’t follow the voltage change in spite of immediate upheaval growth. This result suggested the rate determining of reactive chemicals transport in the titanium oxide. Next, we discovered improvement in the process stability on intractable materials (e.g. iron group elements or noble metals; manganese in this paper) by using thin cap layer of titanium. As the result, the oxidization reaction progressed moderately due to the facts that the oxide of the cap layer is electrical insulative and restriction of the permeability of the reactive chemicals (ingredients of the oxide) that were electrochemically generated at apex of the probe tip.

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Shamsuddin, Liyana, Khairudin Mohamed i Alsadat Rad Maryam. "The Investigation of Microstructures Fabrication on Quartz Substrate Employing Electron Beam Lithography (EBL) and ICP-RIE Process". Advanced Materials Research 980 (czerwiec 2014): 69–73. http://dx.doi.org/10.4028/www.scientific.net/amr.980.69.

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The fabrication of micro or nano-structures on quartz substrate has attracted researchers' attention and interests in recent years due to a wide range of potential applications such as NEMS/MEMS, sensors and biomedical engineering. Various types of next generation lithographic methods have been explored since optical lithography physical limitations has hindered the fabrication of high aspects ratio (HAR) structure on quartz substrates. In this research, the top-down fabrication approach was employed to fabricate microstructures on quartz substrate using Electron Beam Lithography (EBL) system, followed by the pattern transfer process using Inductively Coupled Plasma-Reactive Ion Etching (ICP-RIE) technique. The factors that influenced pattern definition include the type of electron beam (e-beam) photoresist, e-beam exposure parameter such as spot size, working distance, write field, step size, e-beam current, dosage as well as the type of developer and its developing time. The optimum conditions were investigated in achieving micro or nano-structures. Field emission scanning electron microscopy (FESEM) with energy-dispersive X-ray (EDX) and atomic force microscope (AFM) were utilized to characterize the structures profiles.

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Kerth, R. T., K. Jain i M. R. Latta. "Excimer laser projection lithography on a full-field scanning projection system". IEEE Electron Device Letters 7, nr 5 (maj 1986): 299–301. http://dx.doi.org/10.1109/edl.1986.26380.

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Holz, Mathias, Elshad Guliyev, Ahmad Ahmad, Tzvetan Ivanov, Alexander Reum, Martin Hofmann, Claudia Lenk i in. "Field-emission scanning probe lithography tool for 150 mm wafer". Journal of Vacuum Science & Technology B 36, nr 6 (listopad 2018): 06JL06. http://dx.doi.org/10.1116/1.5048357.

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Hofmann, Martin, Stephan Mecholdt, Markus Mohr, Mathias Holz, Stefano Dallorto, Eberhard Manske, Hans-Jörg Fecht i Ivo W. Rangelow. "Nanoscale lift-off process using field emission scanning probe lithography". Journal of Vacuum Science & Technology B 37, nr 6 (listopad 2019): 061803. http://dx.doi.org/10.1116/1.5122272.

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Li, Juan, Hu Yang, Yong Qiang Zhao i Chao Rong Li. "Artificially Induced Defects in Photonic Crystals and their Optical Properties". Advanced Materials Research 800 (wrzesień 2013): 298–301. http://dx.doi.org/10.4028/www.scientific.net/amr.800.298.

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An efficient approach for fabricating three-dimensional (3D) photonic crystals (PCs) embedded defects via lithography was introduced. The resulting structures of plan view and cross-section of 3D PCs are characterized by field emission scanning electron microscopy. Ultraviolet-visible transmission spectra show their optical properties. The 3D PCs embedded defects change the center wavelength of photonic band gaps (PBGs) in original PCs, which can be applied in modification and control of the diffraction properties for optical devices.

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Lu Sen, 鲁森, 杨开明 Yang Kaiming, 朱煜 Zhu Yu, 王磊杰 Wang Leijie i 张鸣 Zhang Ming. "Design and Analysis of Scanning Beam Interference Lithography Optical System Based on Far-Field Interference". Acta Optica Sinica 38, nr 6 (2018): 0605001. http://dx.doi.org/10.3788/aos201838.0605001.

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Ulrich, Georg, Emanuel Pfitzner, Arne Hoehl, Jung-Wei Liao, Olga Zadvorna, Guillaume Schweicher, Henning Sirringhaus i in. "Thermoelectric nanospectroscopy for the imaging of molecular fingerprints". Nanophotonics 9, nr 14 (21.08.2020): 4347–54. http://dx.doi.org/10.1515/nanoph-2020-0316.

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AbstractWe present a nanospectroscopic device platform allowing simple and spatially resolved thermoelectric detection of molecular fingerprints of soft materials. Our technique makes use of a locally generated thermal gradient converted into a thermoelectric photocurrent that is read out in the underlying device. The thermal gradient is generated by an illuminated atomic force microscope tip that localizes power absorption onto the sample surface. The detection principle is illustrated using a concept device that contains a nanostructured strip of polymethyl methacrylate (PMMA) defined by electron beam lithography. The platform’s capabilities are demonstrated through a comparison between the spectrum obtained by on-chip thermoelectric nanospectroscopy with a nano-FTIR spectrum recorded by scattering-type scanning near-field optical microscopy at the same position. The subwavelength spatial resolution is demonstrated by a spectral line scan across the edge of the PMMA layer.

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Behzadirad, Mahmoud, Ashwin K. Rishinaramangalam, Daniel Feezell, Tito Busani, Christoph Reuter, Alexander Reum, Mathias Holz i in. "Field emission scanning probe lithography with GaN nanowires on active cantilevers". Journal of Vacuum Science & Technology B 38, nr 3 (maj 2020): 032806. http://dx.doi.org/10.1116/1.5137901.

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Kotlyar, V. V., S. S. Stafeev, L. O'Faolain i M. V. Kotlyar. "High numerical aperture metalens to generate an energy backflow". Computer Optics 44, nr 5 (październik 2020): 691–98. http://dx.doi.org/10.18287/2412-6179-co-742.

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Using electronic beam lithography and reactive ion beam etching, a metalens is manufactured in a thin layer of amorphous silicon of a 130-nm depth, a 30-µm diameter, and a 633-nm focal length (equal to the illumination wavelength). The metalens is composed of 16 sectored subwavelength binary gratings with a 220-nm period. The uniqueness of this metalens is that when illuminated by left-handed circularly polarized light, it is capable of generating a left-handed circularly polarized vortex beam with a topological charge of 2, generating a second-order cylindrical vector beam when illuminated by linearly polarized light. Both for linear and circular incident polarization, an energy backflow is found to be generated in the vicinity of the tight focus. Transverse intensity distributions measured with a scanning near-field optical microscope near the focus of the metalens are in qualitative agreement with the intensity distributions calculated by the FDTD method. This confirms that a backward energy flow takes place at the focus of the metalens. A metalens generating an energy backflow near its focus is fabricated and characterized for the first time.

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Mohiddon, Md Ahamad, L. D. Varma Sangani i M. Ghanashyam Krishna. "Scanning near field optical microscopy of gold nano-disc arrays fabricated by electron beam lithography and their application as surface enhanced Raman scattering substrates". Chemical Physics Letters 588 (listopad 2013): 160–66. http://dx.doi.org/10.1016/j.cplett.2013.10.008.

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Mamyrbayev, Talgat, Alexander Opolka, Alexey Ershov, Josephine Gutekunst, Pascal Meyer, Katsumasa Ikematsu, Atsushi Momose i Arndt Last. "Development of an Array of Compound Refractive Lenses for Sub-Pixel Resolution, Large Field of View, and Time-Saving in Scanning Hard X-ray Microscopy". Applied Sciences 10, nr 12 (16.06.2020): 4132. http://dx.doi.org/10.3390/app10124132.

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A two-dimensional array of compound refractive lenses (2D array of CRLs) designed for hard X-ray imaging with a 3.5 mm2 large field of view is presented. The array of CRLs consists of 2D polymer biconcave parabolic 34 × 34 multi-lenses fabricated via deep X-ray lithography. The developed refractive multi-lens array was applied for sub-pixel resolution scanning transmission X–ray microscopy; a raster scan with only 55 × 55 steps provides a 3.5 megapixel image. The optical element was experimentally characterized at the Diamond Light Source at 34 keV. An array of point foci with a 55 µm period and an average size of ca. 2.1 µm × 3.6 µm was achieved. In comparison with the conventional scanning transmission microscopy using one CRL, sub-pixel resolution scanning transmission hard X-ray microscopy enables a large field of view and short scanning time while keeping the high spatial resolution.

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Fang, Wei, Jian Lei, Pengda Zhang, Fei Qin, Meiling Jiang, Xufeng Zhu, Dejiao Hu, Yaoyu Cao i Xiangping Li. "Multilevel phase supercritical lens fabricated by synergistic optical lithography". Nanophotonics 9, nr 6 (18.04.2020): 1469–77. http://dx.doi.org/10.1515/nanoph-2020-0064.

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AbstractThe advent of planar metalenses, including the super-oscillatory lens (SOL) and the supercritical lens (SCL) with distinctive interference properties, has profoundly impacted on the long-lasting perception of the far-field optical diffraction limit. In spite of its conspicuous success in achieving marvelously small focal spots, the planar metalens still faces tough design and fabrication challenges to realize high focusing efficiency. In this work, we demonstrated a dual-mode laser fabrication technique based on two-photon polymerization for realizing the multilevel phase SCL with focusing efficiency spiking. Synergistically controlling two types of movement trajectory, which is implemented with the piezo stage and the scanning galvo mirror, enables the fabrication of complicated structures with sub-diffraction-limit feature size. By utilizing such advantage, SCLs with discretized multilevel phase configurations are explicitly patterned. The experimental characterization results have shown that a four-level phase SCL can focus light into a sub-diffraction-limit spot with the lateral size of 0.41 λ/NA (NA is the numerical aperture), while achieve the focal spot intensity and the energy concentration ratio in the focal region 7.2 times and 3 times that of the traditional binary amplitude-type SCL with the same optimization conditions, respectively. Our results may release the application obstacles for the sub-diffraction-limit planar metalens and enable major advances in the fields from label-free optical super-resolution imaging to high precision laser fabrication.

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Lenk, Claudia, Martin Hofmann, Tzvetan Ivanov, Ahmad Ahmad, Steve Lenk, Ivo W. Rangelow, Alexander Reum i in. "Sharp GaN nanowires used as field emitter on active cantilevers for scanning probe lithography". Journal of Vacuum Science & Technology B 36, nr 6 (listopad 2018): 06JL04. http://dx.doi.org/10.1116/1.5048190.

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Chen, Henry J. H., Tzu Nien Lee, Shin-Lun Tseng, Sun-Zen Chen i Po-Wen Chiu. "Characterizations of Ion-Sensitive Field-Effect Transistors with Silicon Wire Array Channels and Stack-Sensing Membrane". Journal of The Electrochemical Society 169, nr 3 (1.03.2022): 037511. http://dx.doi.org/10.1149/1945-7111/ac5ad9.

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In this study, the characteristics of ion-sensitive field-effect transistors (ISFETs) with silicon wire array channels and sensing membrane stacks of 3-aminopropyltriethoxysilane (APTES)/SiO2 were investigated. Si wires were fabricated by nanoimprint lithography and Si anisotropic/isotropic reactive-ion etching processes. The Si wires, with a line width of ∼200 nm, were undercut and nearly suspended, which formed an Ω -shape cross-section. The aspects of wires were investigated using an optical microscope, an atomic force microscope, a scanning electron microscope, and a transmission electron microscope. The sensitivity, hysteresis, and drift of ISFETs were investigated. The above sensing properties were all significantly improved with the proposed channels and the sensing membrane stacks. As such, high-performance ISFETs can be realized for future biochemical applications.

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Lenk, Claudia, Yana Krivoshapkina, Martin Hofmann, Steve Lenk, Tzvetan Ivanov, Ivo W. Rangelow, Ahmad Ahmad i in. "High-throughput process chain for single electron transistor devices based on field-emission scanning probe lithography and Smart Nanoimprint lithography technology". Journal of Vacuum Science & Technology B 37, nr 2 (marzec 2019): 021603. http://dx.doi.org/10.1116/1.5067269.

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Saekow, B., S. Porntheeraphat, Sakon Rahong, S. Jaruvanawat i J. Nukeaw. "High Refractive Index Dielectric Prepared by Electron Beam Evaporation for Photonic Crystal Optical Biosensor Application". Advanced Materials Research 93-94 (styczeń 2010): 545–48. http://dx.doi.org/10.4028/www.scientific.net/amr.93-94.545.

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The fabricated photonic crystal biosensor device consists of SOG material and titanium dioxide (TiO2) thin films as low and high refractive indexes dielectric layers, respectively. Nano-Imprinting Lithography (NIL) process was used to duplicate periodic line as grating structure from Ni-master mold onto SOG/glass. High refractive index dielectric thin film layer was deposited by using electron beam evaporation system. The surface morphology and thickness of thin film are characterized by atomic force microscope (AFM) and field emission scanning electron microscope (FE-SEM), respectively. The optical measurement system is set up to observed the sensitivity of fabricated device. A shift of reflected peak wavelength observed from DI-water and IPA was tested. The morphology and the thickness of the prepared dielectric thin films are affected to the efficiency of fabricated device.

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Kasahara, Haruo, Tsutomu Shishido, Norihiko Samoto i Nobuo Shimazu. "Performances by the electron optical system of low energy electron beam proximity projection lithography tool with a large scanning field". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 23, nr 6 (2005): 2754. http://dx.doi.org/10.1116/1.2062435.

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Srisuai, N., Mati Horprathum, P. Eiamchai, P. Chindaudom, S. Boonruang i Somyod Denchitcharoen. "Development of Nanohole Array Patterned by Laser Interference Lithography Technique". Key Engineering Materials 675-676 (styczeń 2016): 41–44. http://dx.doi.org/10.4028/www.scientific.net/kem.675-676.41.

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Periodic nanohole pattern was created in spin-coated photoresist S1805 on Si substrates by Laser Interference Lithography (LIL). Wavelength of a laser source used in the optical system is 442 nm with the photon energy 2.80 eV. The system was set up to employ two laser beams from a beam splitter to generate interference pattern and expose to the photoresist. There are two parameters (incident angle and exposure time) which are determined due to affecting the ordering and feature of nanohole array. Therefore, the relation of these two parameters and actual dose were investigated and theoretically analyzed to optimize the resolution of LIL technique for nanoholes. The prepared samples after developing in the M26A for 5 sec were analyzed by field-emission scanning electron microscopy (FE-SEM). The results show that the pitch of the pattern is 440 nm and the smallest hole size is 190 nm The best feature is found for a laser fluence of 140 mJ/cm2. This nanohole array patterned by LIL consists of periodic nanostructures for high density storage to fabricate various nanodevices.

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Hoe, Zheng-Yu, Chun-Chieh Chang, Jia-Jin Jason Chen, Chung-Kun Yen, Shao-Yu Wang, Yu-Hsuan Kao, Wei-Ming Li, Wen-Fan Chen i Cheng-Tang Pan. "Enhancement of PVDF Sensing Characteristics by Retooling the Near-Field Direct-Write Electrospinning System". Sensors 20, nr 17 (28.08.2020): 4873. http://dx.doi.org/10.3390/s20174873.

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This research aimed to develop a direct-write near-field electrospinning system (DW-NFES) with three-axis positioning of controllable speed, torque and position to produce sizable and high-quality piezoelectric fibers for sensing purposes. Sensor devices with high electrical response signals were developed and tested. To achieve DW-NFES purpose, a servo motor controller was designed to develop a high response rate, accurate positioning, and stable mobile device through the calculation of bandwidth and system time delay. With this retooled system of DW-NFES, controllable and uniform size fibers in terms of diameters, stretching force, and interspaces can be obtained. Sensor devices can be made selectively without a complicated lithography process. The characteristics of this DW-NFES platform were featured by high response rate, accurate positioning, and stable movement to make fibers with high piezoelectric property. In this study, polyvinylidene fluoride (PVDF) was used to explore and enhance their sensing quality through the platform. The parametric study of the process factors on piezoelectric sensing signals mainly included the concentration of electrospinning PVDF solution, high voltage electric field, and collection speed. Finally, the surface morphology and piezoelectric properties of the as-electrospun PVDF fibers were examined by scanning electron microscopy (SEM) and characterized by electrical response measurement techniques. The results showed that the fiber spinning speed of the DW-NFES system could be increased to ~125 from ~20 mm/s and the accuracy precision was improved to ~1 from ~50 μm, compared to conventional step motor system. The fiber diameter reached ~10 μm, and the electrospinning pitch reached to as small as ~10 μm. The piezoelectric output voltage of the electrospun fibers was increased ~28.6% from ~97.2 to ~125 mV; the current was increased ~27.6% from ~163 to ~208 nA, suggesting that the piezoelectric signals can be enhanced significantly by using this retooled system. Finally, an external control module (Arduino-MAGE) was introduced to control the PVDF piezoelectric fiber sensors integrated as a sensing array. The behavior of long-term sedentary patients can be successfully detected by this module system to prevent the patients from the bedsores.

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Zhang, Yang, Shulin Gu, Kun Tang, Jiandong Ye, Haixiong Ge, Zhengrong Yao, Shunming Zhu i Youdou Zheng. "Fabrication and Characterization of Highly Oriented N-Doped ZnO Nanorods by Selective Area Epitaxy". Journal of Nanomaterials 2015 (2015): 1–9. http://dx.doi.org/10.1155/2015/854074.

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High-quality nitrogen-doped ZnO nanorods have been selectively grown on patterned and bare ZnO templates by the combination of nanoimprint lithography and chemical vapor transport methods. The grown nanorods exhibited uniformity in size and orientation as well as controllable density and surface-to-volume ratio. The structural and optical properties of ZnO nanorods and the behaviour of N dopants have been investigated by means of the scanning electron microscope, photoluminescence (PL) spectra, and Raman scattering spectra. The additional vibration modes observed in Raman spectra of N-doped ZnO nanorods provided solid evidence of N incorporation in ZnO nanorods. The difference of excitonic emissions from ZnO nanorods with varied density and surface-to-volume ratio suggested the different spatial distribution of intrinsic defects. It was found that the defects giving rise to acceptor-bound exciton (A0X) emission were most likely to distribute in the sidewall surface with nonpolar characteristics, while the donor bound exciton (D0X) emission related defects distributed uniformly in the near top polar surface.

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Ishak, N. S., N. Zainal, F. C. Seman i S. M. Shah. "Fabrication and characterisation of Frequency Selective Surface (FSS) for Terahertz Sensing Application". Journal of Physics: Conference Series 2250, nr 1 (1.04.2022): 012010. http://dx.doi.org/10.1088/1742-6596/2250/1/012010.

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Abstract A frequency selective surface (FSS) structure based on a circular slot with 28 to 31 μm was fabricated using Electron Beam Lithography combined with wet etching technique on a 400 μm thick quartz substrate. The circular slot pattern, designed using the CST software, was transferred during the Electron Beam (EBL) exposure with 100 kV voltage acceleration, 2 nA of e-beam current, and line dosage of 1000 μC2. A 0.5 μm thick aluminium layer was deposited on a quartz substrate using the thermal evaporator technique. The aluminium thickness was confirmed by laser microscope and surface profiler measurement. The investigation shows that 20 seconds is the optimal etching time for producing the desired FSS circular slot structure compared to 40 and 60 seconds. The fabricated samples surface metrology was examined using an optical microscope, Field Emission Scanning Electron Microscope (FESEM) and Atomic Force Microscope (AFM). The material compositions of the samples were confirmed by using the Energy Dispersive X-ray (EDX) measurement. Results show that, on average, there are ±1.5 μm of tolerance produced for fabricated sample size on the circular slot pattern compared to the CST simulation results. FSS performance slightly shifted in the frequency from actual 1.80 THz to 1.79 THz, whereas the transmission magnitude has increased by 0.03 from 0.91 to 0.94.

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Volkova, Kseniia, Julia Heupel, Sergei Trofimov, Fridtjof Betz, Rémi Colom, Rowan W. MacQueen, Sapida Akhundzada i in. "Optical and Spin Properties of NV Center Ensembles in Diamond Nano-Pillars". Nanomaterials 12, nr 9 (29.04.2022): 1516. http://dx.doi.org/10.3390/nano12091516.

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Nitrogen-vacancy (NV) color centers in diamond are excellent quantum sensors possessing high sensitivity and nano-scale spatial resolution. Their integration in photonic structures is often desired, since it leads to an increased photon emission and also allows the realization of solid-state quantum technology architectures. Here, we report the fabrication of diamond nano-pillars with diameters up to 1000 nm by electron beam lithography and inductively coupled plasma reactive ion etching in nitrogen-rich diamonds (type Ib) with [100] and [111] crystal orientations. The NV centers were created by keV-He ion bombardment and subsequent annealing, and we estimate an average number of NVs per pillar to be 4300 ± 300 and 520 ± 120 for the [100] and [111] samples, respectively. Lifetime measurements of the NVs’ excited state showed two time constants with average values of τ1 ≈ 2 ns and τ2 ≈ 8 ns, which are shorter as compared to a single color center in a bulk crystal (τ ≈ 10 ns). This is probably due to a coupling between the NVs as well as due to interaction with bombardment-induced defects and substitutional nitrogen (P1 centers). Optically detected magnetic resonance measurements revealed a contrast of about 5% and average coherence and relaxation times of T2 [100] = 420 ± 40 ns, T2 [111] = 560 ± 50 ns, and T1 [100] = 162 ± 11 μs, T1 [111] = 174 ± 24 μs. These pillars could find an application for scanning probe magnetic field imaging.

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Stevanović, Magdalena M., Nenad Filipović, Maja Kuzmanović, Nina Tomić, Dušan Ušjak, Marina Milenković, Kai Zheng, Juergen Stampfl i Aldo R. Boccaccini. "Synthesis and characterization of a collagen-based composite material containing selenium nanoparticles". Journal of Biomaterials Applications 36, nr 10 (27.02.2022): 1800–1811. http://dx.doi.org/10.1177/08853282211073731.

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Multidrug-resistant bacterial strains represent an emerging global health threat and a great obstacle for bone tissue engineering. One of the major components of the extracellular matrix of the bone is a collagen protein, while selenium is an element that has antimicrobial potential, and is also important for bone metabolism and bone health. Here we represent the incorporation of selenium nanoparticles (SeNPs) synthesized by the green chemical reduction method into collagen gels to produce a composite material, collagen/SeNPs, with antimicrobial properties. The samples were comprehensively characterized by zeta potential measurements, dynamic light scattering inductively coupled plasma-mass spectrometry (ICP-MS), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), optical microscopy, field-emission scanning electron microscopy (FE-SEM), and differential scanning calorimetry The cytotoxicity of the SeNPS, as well as collagen/SeNPs, was tested on the MRC-5 cells. It was revealed that collagen/SeNPS expressed a lower cytotoxic effect. Collagen/SeNPs showed significant antibacterial activity against all tested Gram-positive strains, the major causative agents of orthopedic infections as well as Candida albicans. Furthermore, three-dimensional β-tricalcium phosphate (3D-TCP) scaffolds were fabricated by a well-established 3D printing (lithography) method, and afterward preliminary coated by newly-synthesized SeNPs or collagen/SeNPs. In addition, uncoated 3D-TCP scaffolds as well as coated by collagen/SeNPs were subjected to biofilm formation. The production of Staphylococcus aureus biofilm on coated scaffolds by collagen/SeNPs was significantly reduced compared to the uncoated ones.

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Gupta, Ankur, Poonam Sundriyal, Aviru Basu, Kapil Manoharan, Rishi Kant i Shantanu Bhattacharya. "Nano-finishing of MEMS-based platforms for optimum optical sensing". Journal of Micromanufacturing 3, nr 1 (13.11.2019): 39–53. http://dx.doi.org/10.1177/2516598419862676.

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The surface finish of the microelectromechanical systems substrate, particularly the ones that are deployed in chip-based optofluidic systems, is of utmost importance, and the overall surface finish helps in preventing light scattering and associated losses. The proposed system is made up of a microchannel with a coating on its interior which acts as a cladding layer and possesses an air-like refractive index. The water-based solutions with refractive indices higher than the coating, when confined within such channels, act as waveguides with a refractive index difference which would allow grazing incidence at the solution film interface. The microchannel is fabricated over a piece of Si along <100> direction with the help of lithography and wet etching technique. After wet chemical etching of silicon, multiple pyramidal hillocks with overall large surface roughness is observed which are not appropriate for loss-free light transmission and cause various optical losses. So the overall optimization of surface roughness created by the etching processes is critical from an optical standpoint. Roughness in the microchannel surface mainly arises due to wet etching through tetra methyl alcohol, potassium hydroxide, potassium ferricyanide and isopropyl alcohol. In this work, we have obtained surface finish upto ~1.33 nm at an etch rate of 141 nm/min which is obtained by tweaking the composition of the participating reagents in the etchants and also the etching temperature. The surface roughness obtained is quite small in comparison to the wavelength range of the visible spectrum and thus losses were greatly avoided. The low refractive index films over silicon substrate were characterized by field emission scanning electron microscopy, energy dispersive analysis of X-ray, atomic force microscopy, 3D optical profilometry and ellipsometry. The transmission results show that transmission loss was reduced by 27.42% for the coated samples with 33 nm surface roughness as compared to surface with 250 nm roughness.

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CHAKRABORTY, PURUSHOTTAM. "LAYERED SYNTHETIC MICROSTRUCTURES AS OPTICAL ELEMENTS FOR THE EXTREME ULTRAVIOLET AND SOFT X-RAYS". International Journal of Modern Physics B 05, nr 13 (10.08.1991): 2133–228. http://dx.doi.org/10.1142/s0217979291000845.

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In recent years, the availability of intense continuous radiation sources, such as electron synchrotrons and laser-induced hot plasmas, has given rise to a renewed interest in soft x-ray and x-uv reflectivity measurements. Such studies were, for a long time, hindered because of mainly two reasons. First, it was really difficult to generate soft x-rays in the laboratories and second, there was no possibility for practical implementation and design of optical systems, such as focusing elements, mirrors, etc. associated with that particular wavelength region. Soft x-rays, with wavelength range usually from 10 to about 200 angstroms, can produce images of higher resolution than visible light due to their shorter wavelength. For years, physicists have wanted to construct an x-ray microscope that would exploit the ability of soft x-rays to detect small structures. The need for such an instrument is clear. The resolution of light microscopes is limited by the comparatively long wavelength of visible light. Although transmission electron microscopes have much higher resolution, they are weak in penetrating power and are, therefore, limited to very thin specimens. Therefore, transmission electron microscopy involves extreme care in sample preparation. Such preparations which might alter the very structure of a biological sample, would not be required in x-ray microscopy. The difficulties in constructing an x-ray microscope, however, have proved to be irresistible, because of the fact that soft x-rays cannot be brought together to form an image. In other words, soft x-rays cannot be made reflected from any known single surface at normal or near-normal incidence. The only possibility that existed until now employs grazing incidence, the only form of focusing x-ray optics. But their quality (resolution) has been limited because they must be machined in the form of a paraboloid or hyperboloid. Lenses of the kind used in ordinary optical microscopes cannot be made for use at wavelengths less than about 1000 angstroms. There are two reasons for this. First, there is only a tiny difference in the refractive indices among the different materials at soft x-ray wavelengths. Second, soft x-rays are strongly absorbed by all materials and cannot penetrate any conceivable lens, used in ordinary optical microscopes or telescopes. A major advance in x-ray optics holds a great promise both in the fields of high resolution scanning x-ray microscopy, lithography and substantial improvements in the quality of x-ray telescopes. Recent improvements in the techniques for quality control of evaporated and sputtered films have led to the interest in the controlled fabrication of multilayered structures known as 'Layered Synthetic Microstructures', to be used as mirrors for the extreme ultraviolet and soft x-ray regions. These can be produced with virtually any layer spacing greater than approximately 10 angstroms and they have a considerably high diffraction efficiency at normal or near-normal incidence. This remarkable enhancement in normal-incidence reflectivities at x-uv domain of the electromagnetic spectrum leads to another innovative application of these microstructures, i.e. the production of x-ray lasers with high gain-length products, where the enhanced normal-incidence reflectivity of the multilayers has been applied for multiple pass gain of the laser media by increasing the effective path lengths of the plasma columns. The present article covers the theoretical considerations, development and different techniques of controlled fabrication of layered synthetic microstructures along with their potential applications in the fields of x-ray spectroscopy, microscopy, x-ray laser production and lithography.

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Nidhi, Tashi Nautiyal i Samaresh Das. "Large-Scale Synthesis of Nickel Sulfide for Electronic Device Applications". MRS Advances 5, nr 52-53 (2020): 2727–35. http://dx.doi.org/10.1557/adv.2020.339.

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AbstractSeveral techniques have been employed for large-scale synthesis of group 10 transition metal dichalcogenides (TMDCs) based on platinum and palladium for nano- and opto-electronic device applications. Nickel Sulphides (NixSy), belonging to group 10 TMDC family, have been widely explored in the field of energy storage devices such as batteries and supercapacitors, etc. and commonly synthesized through the solution process or hydrothermal methods. However, the high-quality thin film growth of NixSy for nanoelectronic applications remains a central challenge. Here, we report the chemical vapor deposition (CVD) growth of NiS2 thin film onto a two-inch SiO2/Si substrate, for the first time. Techniques such as X-ray photoelectron spectroscopy, X-ray Diffraction, Raman Spectroscopy, Scanning Electron Microscopy, have been used to analyse the quality of this CVD grown NiS2 thin film. A high-quality crystalline thin film of thickness up to a few nanometres (~28 nm) of NiS2 has been analysed here. We also fabricated a field-effect device based on NiS2 thin film using interdigitated electrodes by optical lithography. The electrical performance of the fabricated device is characterized at room temperature. On applying the drain voltage from -2 to +2 V, the device shows drain current in the range of 10-9 A before annealing and in the range of 10-6 A after annealing. This, being comparable to that from devices based on MoS2 and other two-dimensional materials, projects CVD grown NiS2 as a good alternative material for nanoelectronic devices.

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Chen, Y., F. Carcenac, C. Ecoffet, D. J. Lougnot i H. Launois. "Mold-assisted near-field optical lithography". Microelectronic Engineering 46, nr 1-4 (maj 1999): 69–72. http://dx.doi.org/10.1016/s0167-9317(99)00017-9.

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