Artykuły w czasopismach na temat „Nanowires”
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Khurshid, Hafsa, Rahana Yoosuf, Bashar Afif Issa, Atta G. Attaelmanan i George Hadjipanayis. "Tuning Easy Magnetization Direction and Magnetostatic Interactions in High Aspect Ratio Nanowires". Nanomaterials 11, nr 11 (12.11.2021): 3042. http://dx.doi.org/10.3390/nano11113042.
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Cobalt nanowires have been synthesized by electrochemical deposition using track-etched anodized aluminum oxide (AAO) templates. Nanowires with varying spacing-to-diameter ratios were prepared, and their magnetic properties were investigated. It is found that the nanowires’ easy magnetization direction switches from parallel to perpendicular to the nanowire growth direction when the nanowire’s spacing-to-diameter ratio is reduced below 0.7, or when the nanowires’ packing density is increased above 5%. Upon further reduction in the spacing-to-diameter ratio, nanowires’ magnetic properties exhibit an isotropic behavior. Apart from shape anisotropy, strong dipolar interactions among nanowires facilitate additional uniaxial anisotropy, favoring an easy magnetization direction perpendicular to their growth direction. The magnetic interactions among the nanowires were studied using the standard method of remanence curves. The demagnetization curves and Delta m (Δm) plots showed that the nanowires interact via dipolar interactions that act as an additional uniaxial anisotropy favoring an easy magnetization direction perpendicular to the nanowire growth direction. The broadening of the dipolar component of Δm plots indicate an increase in the switching field distribution with the increase in the nanowires’ diameter. Our findings provide an important insight into the magnetic behavior of cobalt nanowires, meaning that it is crucial to design them according to the specific requirements for the application purposes.
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Podlaha, Elizabeth J., Mohammadsadegh Beheshti, Deyang Li i Sunggook Park. "Fe-Ni-Co Electrodeposited Nanowires Decorated with Au". ECS Meeting Abstracts MA2022-01, nr 24 (7.07.2022): 2487. http://dx.doi.org/10.1149/ma2022-01242487mtgabs.
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Alloy nanowires containing Fe, Ni and Co are of interest as electrode materials in miniaturized devices due to their ability to align them under a magnetic field. In order to improve their resistivity while retaining their magnetic behavior, Fe-Ni-Co nanowires were electrodeposited and decorated with Au; single nanowires were then further characterized (Fig. 1). The nanowires were deposition under a constant applied potential within a nanoscale alumina template, followed by dissolution of the membrane, release of the nanowires, and subsequent treatment in a gold acid electrolyte. Au clusters formed on the Fe-Ni-Co surface through simultaneous displacement and corrosion reactions. The morphology, composition and structure was examined before and after modification, revealing a change in crystallinity and composition that impacted the nanowire’s electrical and magnetic properties. Transferring a single nanowire to a lithographically prepared two-point probe enabled the electrical and magnetic characterization of the Au decorated nanowire. Averaging results of quadruplicate replicates, a low coverage of discontinuous Au clusters on Fe-Ni-Co nanowires significantly decreased the resistivity, not attributed entirely to the lower resistivity of Au, but as a consequence of changes of the Fe-Ni-Co crystallinity. A high coverage of the Fe-Ni-Co by Au had no further benefit, and even increased the resistivity. Since bulk gold is diamagnetic and decoration of Au onto the Fe-Ni-Co nanowires may compromise the overall magnetic property, the magnetoresistance and electron mobility were determined. Both decreased, as expected, with coverage of Au clusters on the nanowires, suggesting that there may be an optimal cluster density for modifying the Fe-Ni-Co nanowires. Figure 1. Electrodeposited nanowires initially amorphous then decorated with Au showing a change in crystallinity and subsequent characterization with a two-point probe. Figure 1
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Kolmakov, Andrei, Xihong Chen i Martin Moskovits. "Functionalizing Nanowires with Catalytic Nanoparticles for Gas Sensing Application". Journal of Nanoscience and Nanotechnology 8, nr 1 (1.01.2008): 111–21. http://dx.doi.org/10.1166/jnn.2008.n10.
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Metal oxide semiconducting nanowires are among the most promising materials systems for use as conductometric gas sensors. These systems function by converting surface chemical processes, often catalytic processes, into observable conductance variations in the nanowire. The surface properties, and hence the sensing properties of these devices can be altered dramatically improving the sensitivity and selectivity, by the deposition of catalytic metal nanoparticles on the nanowire's surface. This leads not only to promising sensor strategies but to a route for understanding some of the fundamental science occurring on these nanoparticles and at the metal/nanowire junction. In particular studying these systems can lead to a better understanding of the influence of the catalyst particle on the electronic structure of the nanowire and its electron transport. This report surveys results obtained so far in this area. In particular, the comparative sensing performance of single quasi-1D chemiresistors (i.e., nanowires or nanobelts) before and after surface decoration with noble metal catalyst particles show significant improvement in sensitivity toward oxidizing and reducing gases. Moreover, one finds that the sensing mechanism can depend dramatically on the degree of metal coverage of the nanowire.
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Hsieh, S. H., S. T. Ho i W. J. Chen. "Silicon Nanowires with MoSxand Pt as Electrocatalysts for Hydrogen Evolution Reaction". Journal of Nanomaterials 2016 (2016): 1–10. http://dx.doi.org/10.1155/2016/6974646.
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A convenient method was used for synthesizing Pt-nanoparticle/MoSx/silicon nanowires nanocomposites. Obtained Pt-MoSx/silicon nanowires electrocatalysts were characterized by transmission electron microscopy (TEM). The hydrogen evolution reaction efficiency of the Pt-MoSx/silicon nanowire nanocomposite catalysts was assessed by examining polarization and electrolysis measurements under solar light irradiations. The electrochemical characterizations demonstrate that Pt-MoSx/silicon nanowire electrodes exhibited an excellent catalytic activity for hydrogen evolution reaction in an acidic electrolyte. The hydrogen production capability of Pt-MoSx/silicon nanowires is also comparable toMoSx/silicon nanowires and Pt/silicon nanowires. Electrochemical impedance spectroscopy experiments suggest that the enhanced performance of Pt-MoSx/silicon nanowires can be attributed to the fast electron transfer between Pt-MoSx/silicon nanowire electrodes and electrolyte interfaces.
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Diao, Yu, Lei Liu, Sihao Xia i Yike Kong. "Differences in optoelectronic properties between H-saturated and unsaturated GaN nanowires with DFT method". International Journal of Modern Physics B 31, nr 12 (10.05.2017): 1750084. http://dx.doi.org/10.1142/s0217979217500849.
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To investigate the influences of dangling bonds on GaN nanowires surface, the differences in optoelectronic properties between H-saturated and unsaturated GaN nanowires are researched through first-principles study. The GaN nanowires along the [0001] growth direction with diameters of 3.7, 7.5 and 9.5 Å are considered. According to the results, H-saturated GaN nanowires are more stable than the unsaturated ones. With increasing nanowire diameter, unsaturated GaN nanowires become more stable, while the stability of H-saturated GaN nanowires has little change. After geometry optimization, the atomic displacements of unsaturated and H-saturated models are almost reversed. In (0001) crystal plane, Ga atoms tend to move inwards and N atoms tend to move outwards slightly for the unsaturated nanowires, while Ga atoms tend to move outwards and N atoms tend to move inwards slightly for the H-saturated nanowires. Besides, with increasing nanowire diameter, the conduction band minimum of H-saturated nanowire moves to the lower energy side, while that of the unsaturated nanowire changes slightly. The bandgaps of H-saturated nanowires are approaching to bulk GaN as the diameter increases. Absorption curves and reflectivity curves of the unsaturated and H-saturated nanowires exhibit the same trend with the change of energy except the H-saturated models which show larger variations. Through all the calculated results above, we can better understand the effects of dangling bonds on the optoelectronic properties of GaN nanowires and select more proper calculation models and methods for other calculations.
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Olszewski, Karol, Marta Sobanska, Vladimir G. Dubrovskii, Egor D. Leshchenko, Aleksandra Wierzbicka i Zbigniew R. Zytkiewicz. "Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers". Nanomaterials 13, nr 18 (19.09.2023): 2587. http://dx.doi.org/10.3390/nano13182587.
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GaN nanowires grown on metal substrates have attracted increasing interest for a wide range of applications. Herein, we report GaN nanowires grown by plasma-assisted molecular beam epitaxy on thin polycrystalline ZrN buffer layers, sputtered onto Si(111) substrates. The nanowire orientation was studied by X-ray diffraction and scanning electron microscopy, and then described within a model as a function of the Ga beam angle, nanowire tilt angle, and substrate rotation. We show that vertically aligned nanowires grow faster than inclined nanowires, which leads to an interesting effect of geometrical selection of the nanowire orientation in the directional molecular beam epitaxy technique. After a given growth time, this effect depends on the nanowire surface density. At low density, the nanowires continue to grow with random orientations as nucleated. At high density, the effect of preferential growth induced by the unidirectional supply of the material in MBE starts to dominate. Faster growing nanowires with smaller tilt angles shadow more inclined nanowires that grow slower. This helps to obtain more regular ensembles of vertically oriented GaN nanowires despite their random position induced by the metallic grains at nucleation. The obtained dense ensembles of vertically aligned GaN nanowires on ZrN/Si(111) surfaces are highly relevant for device applications. Importantly, our results are not specific for GaN nanowires on ZrN buffers, and should be relevant for any nanowires that are epitaxially linked to the randomly oriented surface grains in the directional molecular beam epitaxy.
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Wu, Phillip M., Lars Samuelson i Heiner Linke. "Toward 3D Integration of 1D Conductors: Junctions of InAs Nanowires". Journal of Nanomaterials 2011 (2011): 1–5. http://dx.doi.org/10.1155/2011/268149.
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A vision and one of the next challenges in nanoelectronics is the 3D integration of nanowire building blocks. Here we show that capillary forces associated with a liquid-air meniscus between two nanowires provides a simple, controllable technique to bend vertical nanowires into designed, interconnected assemblies. We characterize the electric nature of the junctions between crossed nanowires in a lateral geometry, which is one type of basic unit that can be found in interconnected-bent vertical nanowires. The crossed nanowire junction is capacitive in nature, and we demonstrate that one nanowire can be used to field effect gate the other nanowire, allowing for the possibility to develop extremely narrow conducting channels in nanowire planar or 3D electronic devices.
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Rai, Rajesh K., i Chandan Srivastava. "Nonequilibrium Microstructures for Ag–Ni Nanowires". Microscopy and Microanalysis 21, nr 2 (6.02.2015): 491–97. http://dx.doi.org/10.1017/s1431927615000069.
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AbstractThis work illustrates that a variety of nanowire microstructures can be obtained either by controlling the nanowire formation kinetics or by suitable thermal processing of as-deposited nanowires with nonequilibrium metastable microstructure. In the present work, 200-nm diameter Ag–Ni nanowires with similar compositions, but with significantly different microstructures, were electrodeposited. A 15 mA deposition current produced nanowires in which Ag-rich crystalline nanoparticles were embedded in a Ni-rich amorphous matrix. A 3 mA deposition current produced nanowires in which an Ag-rich crystalline phase formed a backbone-like configuration in the axial region of the nanowire, whereas the peripheral region contained Ni-rich nanocrystalline and amorphous phases. Isothermal annealing of the nanowires illustrated a phase evolution pathway that was extremely sensitive to the initial nanowire microstructure.
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Arjmand, Tabassom, Maxime Legallais, Thi Thu Thuy Nguyen, Pauline Serre, Monica Vallejo-Perez, Fanny Morisot, Bassem Salem i Céline Ternon. "Functional Devices from Bottom-Up Silicon Nanowires: A Review". Nanomaterials 12, nr 7 (22.03.2022): 1043. http://dx.doi.org/10.3390/nano12071043.
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This paper summarizes some of the essential aspects for the fabrication of functional devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting nanowires in functional devices, from single nanowires to large assemblies of nanowires such as nanonets (two-dimensional arrays of randomly oriented nanowires), are briefly reviewed. Subsequently, the main properties of nanowires are discussed followed by those of nanonets that benefit from the large numbers of nanowires involved. After describing the main techniques used for the growth of nanowires, in the context of functional device fabrication, the different techniques used for nanowire manipulation are largely presented as they constitute one of the first fundamental steps that allows the nanowire positioning necessary to start the integration process. The advantages and disadvantages of each of these manipulation techniques are discussed. Then, the main families of nanowire-based transistors are presented; their most common integration routes and the electrical performance of the resulting devices are also presented and compared in order to highlight the relevance of these different geometries. Because they can be bottlenecks, the key technological elements necessary for the integration of silicon nanowires are detailed: the sintering technique, the importance of surface and interface engineering, and the key role of silicidation for good device performance. Finally the main application areas for these silicon nanowire devices are reviewed.
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Lee, Sun Sook, Hyun Jin Kim, Taek-Mo Chung, Young Kuk Lee, Chang Gyoun Kim i Ki-Seok An. "Fabrication of Nanocomposite Based on ZnO Nanowire". Journal of Nanoscience and Nanotechnology 8, nr 9 (1.09.2008): 4895–98. http://dx.doi.org/10.1166/jnn.2008.ic80.
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ZnO-NiO core–shell nanowires and Ni-ZnO nanoparticle–nanowire composites have been synthesized by atomic layer deposition (ALD) and H2 thermal reduction, respectively. Grown ZnO nanowires on Si substrates by vapor transport method were used as templates for the growth of NiO layers. In order to prevent interfacial interaction between deposited NiO and ZnO nanowires templates by the reaction at low temperature and to precisely control the thickness of NiO layer, ALD technique was suitably employed to form the ZnO-NiO core–shell nanowires. All surface area of ZnO nanowires was completely and uniformly covered by amorphous NiO layers at low temperature of 130 °C. The Ni-ZnO nanoparticle–nanowire composites were achieved by the thermal reduction of the ZnO-NiO core–shell nanowires at H2 atmosphere. The density of Ni nanoparticles on ZnO nanowires was roughly related to the pre-deposited NiO thickness and the inter-diffusion of Ni into the ZnO nanowire was not observed.
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Dubrovskii, Vladimir G. "Theory of MBE Growth of Nanowires on Adsorbing Substrates: The Role of the Shadowing Effect on the Diffusion Transport". Nanomaterials 12, nr 7 (24.03.2022): 1064. http://dx.doi.org/10.3390/nano12071064.
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A new model for nanowire growth by molecular beam epitaxy is proposed which extends the earlier approaches treating an isolated nanowire to the case of ensembles of nanowires. I consider an adsorbing substrate on which the arriving growth species (group III adatoms for III-V nanowires) may diffuse to the nanowire base and subsequently to the top without desorption. Analytical solution for the nanowire length evolution at a constant radius shows that the shadowing of the substrate surface is efficient and affects the growth kinetics from the very beginning of growth in dense enough ensembles of nanowires. The model fits quite well the kinetic data on different Au-catalyzed and self-catalyzed III-V nanowires. This approach should work equally well for vapor-liquid-solid and catalyst-free nanowires grown by molecular beam epitaxy and related deposition techniques on unpatterned or masked substrates.
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He, Li Zhong, Li Rong Qin, Jian Wei Zhao, Yu Yang i Ying Ying Yin. "Preparation of Pt/Ni Multilayer Nanowires with Enhanced Magnetic Property and Electrocatalytic Activity". Journal of Nano Research 40 (marzec 2016): 20–28. http://dx.doi.org/10.4028/www.scientific.net/jnanor.40.20.
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Pt/Ni multilayer nanowire arrays were successfully fabricated inside the nanochannels of anodic aluminum oxide template by pulse electrodeposition method. The morphologies of the Pt/Ni nanowires were analyzed, which revealed that these nanowires had smooth surface and uniform diameter of about 70 nm. The ferromagnetic Ni layers were separated periodically by Pt layers along the axis of the nanowires. Magnetization measurements on the Pt/Ni nanowire arrays revealed a stronger magnetic anisotropy with the easy axis parallel to the nanowires. Following electrochemical performance tests indicated that the Pt/Ni multilayer nanowires comprising Pt and Ni layers showed enhanced electrocatalytic activity for methanol oxidation, as compared with pure Pt nanowires.
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WANG, PANGPANG, LUMEI GAO, LIQUN WANG, DONGYAN ZHANG, SEN YANG, XIAOPING SONG, ZHIYONG QIU i RI-ICHI MURAKAMI. "MAGNETIC PROPERTIES OF FENI NANOWIRE ARRAYS ASSEMBLED ON POROUS AAO TEMPLATE BY AC ELECTRODEPOSITION". International Journal of Modern Physics B 24, nr 15n16 (30.06.2010): 2302–7. http://dx.doi.org/10.1142/s0217979210064836.
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FeNi nanowire arrays were fabricated into the pores of porous alumina template by a simple alternating current electrodeposition method in this work. FeNi nanowires with different diameters were obtained depending on the pore size arrangement of alumina templates. FeNi nanowire arrays exhibited obviously magnetic anisotropy, and the easy axis was along the nanowires. When the applied magnetic field was parallel to the nanowires, the coercivity (Hc) and the maximum remnant ratio (Mr/Ms) are considerable higher than those while the magnetic field perpendicular to the nanowires. FeNi nanowires prepared in this work are expected to be utilized as the perpendicular magnetic recording media. The magnetic domain structure and the magnetizing mechanism of FeNi nanowires were also been discussed.
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Keplinger, Mario, Bernhard Mandl, Dominik Kriegner, Václav Holý, Lars Samuelsson, Günther Bauer, Knut Deppert i Julian Stangl. "X-ray diffraction strain analysis of a single axial InAs1–xPxnanowire segment". Journal of Synchrotron Radiation 22, nr 1 (1.01.2015): 59–66. http://dx.doi.org/10.1107/s160057751402284x.
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The spatial strain distribution in and around a single axial InAs1–xPxhetero-segment in an InAs nanowire was analyzed using nano-focused X-ray diffraction. In connection with finite-element-method simulations a detailed quantitative picture of the nanowire's inhomogeneous strain state was achieved. This allows for a detailed understanding of how the variation of the nanowire's and hetero-segment's dimensions affect the strain in its core region and in the region close to the nanowire's side facets. Moreover, ensemble-averaging high-resolution diffraction experiments were used to determine statistical information on the distribution of wurtzite and zinc-blende crystal polytypes in the nanowires.
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Aish, Mohamed Mahmud, i Mikhail D. Starostenkov. "Deformation and Fracture of Metallic Nanowires". Solid State Phenomena 258 (grudzień 2016): 277–80. http://dx.doi.org/10.4028/www.scientific.net/ssp.258.277.
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A many-body interatomic potential for metallic nanowires within the second-moment approximation of the tight-binding model (the Cleri-Rosato potential) was employed to carry out three dimensional molecular dynamics simulations. Molecular dynamics simulation results for metallic nanowires at various temperature are presented. The stress–time and stress length curves for nanowires are simulated. The breaking and yield stress of nanowires are dependent on the Volume and temperature. The necking, Plastic deformation, slipping domain, twins, clusters, microspores and break-up phenomena of nanowire are demonstrated. Stress decreases with increasing nanowire volume and temperature. The final breaking position occurs at the central part of the nanowire when it is short, as the nanowire length increases the breaking position gradually shifts to the ends.
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XU, JIE, WEI LIU, GUO-AN CHENG i RUI-TING ZHENG. "SYNTHESIS AND OPTICAL PROPERTIES OF LARGE-SCALE ALIGNED ALUMINA NANOWIRE ARRAYS". Modern Physics Letters B 24, nr 02 (20.01.2010): 151–60. http://dx.doi.org/10.1142/s0217984910022330.
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Ordered large-scale alumina nanowire arrays on the surface of porous anodic alumina membranes (AAMs) have been synthesized by chemical etching. The analysis shows that amorphous alumina nanowires directly formed from AAMs have uniform size and shape. The mean length and mean diameter of alumina nanowires are about 6 μm and 24 nm, respectively. It is observed that chemical etching parameters affect the synthesis of alumina nanowires and preferable experimental conditions for the synthesis of alumina nanowire arrays. The intensity of photoluminescence excited from alumina nanowire is affected by post-annealing temperatures. The mechanisms for the synthesis and PL emission of alumina nanowires are discussed.
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Jeon, Seong Gi, Jae Yong Song, Ho Sun Shin i Jin Yu. "Solid-State Formation of Intermetallic Compounds in Co-Sb Couple Nanowires". International Symposium on Microelectronics 2010, nr 1 (1.01.2010): 000093–97. http://dx.doi.org/10.4071/isom-2010-ta3-paper5.
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Nanointerconnection technologies have attracted much attention for the future electrical interconnection in electronic packaging. Nanowire interconnection needs to form the intermetallic compounds (IMCs) between the nanowires, in order to effectively reduce the contact resistances. In this study, the couple nanowires of Co and Sb elements were selected to investigate the IMC formation in one dimensional confinement. The Co and Sb nanowires were electrochemically deposited into the anodic aluminum oxide templates, in sequence, which had the pore diameters of about 30 and 60 nm, respectively. Results show that the CoSb phase is formed between Co nanowire and Sb nanowire after heat-treatment at 773 K. The IMC formation was ascribed to the dominant diffusion of Sb atoms toward the Co nanowire. The fast diffusion of Sb atoms toward the Co nanowire resulted in the formation of Kirkendall voids between the IMC and Sb nanowires.
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Prida, V. M., K. R. Pirota, D. Navas, A. Asenjo, M. Hernández-Vélez i M. Vázquez. "Self-Organized Magnetic Nanowire Arrays Based on Alumina and Titania Templates". Journal of Nanoscience and Nanotechnology 7, nr 1 (1.01.2007): 272–85. http://dx.doi.org/10.1166/jnn.2007.18023.
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Densely packed arrays of magnetic nanowires have been synthesized by electrodeposition filling of nanopores in alumina and titania membranes formed by self-assembling during anodization process. Emphasis is made on the control of the production parameters leading to ordering degree and lattice parameter of the array as well as nanowires diameter and length. Structural, morphological and magnetic properties exhibited by nanowire arrays have been studied for several nanowire compositions, different ordering degree and for different nanowire aspect ratios. The magnetic behaviour of nanowires array is governed by the balance between different energy contributions: shape anisotropy of individual nanowires, the magnetostatic interaction of dipolar origin among nanowires, and magnetocrystalline and magnetoelastic anisotropies induced by the pattern templates. These novel nanocomposites, based on ferromagnetic nanowires embedded in anodic nanoporous templates, are becoming promising candidates for technological applications such as functionalised arrays for magnetic sensing, ultrahigh density magnetic storage media or spin-based electronic devices.
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Heo, Y. W., L.-C. Tien i D. P. Norton. "Cubic (Mg,Zn)O Nanowire Growth Using Catalyst-Driven Molecular Beam Epitaxy". Journal of Materials Research 20, nr 11 (listopad 2005): 3028–33. http://dx.doi.org/10.1557/jmr.2005.0388.
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We report on the growth of Mg-rich cubic (Mg,Zn)O nanowires using a catalysis-driven molecular-beam-epitaxy method. Nanowires were grown on both Si and Al2O3 substrates coated with a nominally 2-nm-thick layer of Ag. The (Mg,Zn)O nanowires were grown with a Zn and Mg cation flux, with an O2/O3 mixture serving as the oxidizing species. The growth temperature was 400 °C. Under these conditions, nanowires were observed to grow on the Ag sites. The nanowire diameter was on the order of 90 nm. (Mg,Zn)O nanowires as long as 2 μm were realized. High-resolution transmission electron microscope imagery shows the nanowires had single-phase cubic rock salt structure (Mg,Zn)O with a growth direction along the [100]. The presence and compositional distribution of Mg and Zn in the single nanowire were confirmed using a compositional line-scan, profiled across the nanowire, by energy dispersive spectrometry with scanning transmission electron microscopy.
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Koblischka, Michael Rudolf, Anjela Koblischka-Veneva, XianLin Zeng, Essia Hannachi i Yassine Slimani. "Microstructure and Fluctuation-Induced Conductivity Analysis of Bi2Sr2CaCu2O8+δ (Bi-2212) Nanowire Fabrics". Crystals 10, nr 11 (30.10.2020): 986. http://dx.doi.org/10.3390/cryst10110986.
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Resistance measurements were performed on Bi2Sr2CaCu2O8+δ (Bi-2212) fabric-like nanowire networks or nanofiber mats in the temperature interval 3 K ≤T≤ 300 K. The nanowire fabrics were prepared by means of electrospinning, and consist of long (up to 100 μm) individual nanowires with a mean diameter of 250 nm. The microstructure of the nanowire network fiber mats and of the individual nanowires was thoroughly characterized by electron microscopy showing that the nanowires can be as thin as a single Bi-2212 grain. The polycrystalline nanowires are found to have a texture in the direction of the original polymer nanowire. The overall structure of the nanofiber mats is characterized by numerous interconnects among the nanowires, which enable current flow across the whole sample. The fluctuation-induced conductivity (excess conductivity) above the superconducting transition temperature, Tc, was analyzed using the Aslamzov-Larkin model. Four distinct fluctuation regimes (short-wave, two-dimensional, three-dimensional and critical fluctuation regimes) could be identified in the Bi-2212 nanowire fabric samples. These regimes in such nanowire network samples are discussed in detail for the first time. Based on this analysis, we determine several superconducting parameters from the resistance data.
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Xiao, Ye, J. Shang, L. Z. Kou i Chun Li. "Surface deformation-dependent mechanical properties of bending nanowires: an ab initio core-shell model". Applied Mathematics and Mechanics 43, nr 2 (27.01.2022): 219–32. http://dx.doi.org/10.1007/s10483-022-2814-6.
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AbstractAn ab initio core-shell model is proposed to evaluate the surface effect in bending nanowires, in which the elastic modulus depends on the surface relaxation and deformation induced by external loading. By using first-principles calculations based on the density functional theory (DFT), the surface and bulk properties are calculated for Ag, Pb, and Si nanowires. The obtained theoretical predictions of the effective Young’s modulus of nanowires agree well with the experimental data, which shows that the fixed-fixed nanowire is stiffened and the cantilevered nanowire is softened as the characteristic size of the cross section decreases. Furthermore, the contrastive analysis on the two kinds of nanowires demonstrates that increasing the nanowire aspect ratio would enhance the surface effect. The present results could be helpful for understanding the size effect in nanowires and designing nanobeam-based devices in nanoelectromechanical systems (NEMSs).
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TANG, D. M., C. LIU i H. M. CHENG. "PLATELET BORON NITRIDE NANOWIRES". Nano 01, nr 01 (lipiec 2006): 65–71. http://dx.doi.org/10.1142/s1793292006000124.
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A novel platelet boron nitride (BN) nanowire was synthesized through a floating catalyst enhanced thermal reaction method by using nickelocene as a catalyst precursor. The nanowires are composed of series-wound cup-like single crystalline hexagonal-BN sections with (0002) planes perpendicular to the nanowire axis direction. A low turn-on electric field of 4.85 V/μm and sound field emission stability were achieved for the BN nanowires. The excellent field emission performance can be attributed to the unique structural characteristics of the platelet BN nanowires.
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Rothman, Amnon, Vladimir G. Dubrovskii i Ernesto Joselevich. "Kinetics and mechanism of planar nanowire growth". Proceedings of the National Academy of Sciences 117, nr 1 (17.12.2019): 152–60. http://dx.doi.org/10.1073/pnas.1911505116.
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Surface-guided growth of planar nanowires offers the possibility to control their position, direction, length, and crystallographic orientation and to enable their large-scale integration into practical devices. However, understanding of and control over planar nanowire growth are still limited. Here, we study theoretically and experimentally the growth kinetics of surface-guided planar nanowires. We present a model that considers different kinetic pathways of material transport into the planar nanowires. Two limiting regimes are established by the Gibbs–Thomson effect for thinner nanowires and by surface diffusion for thicker nanowires. By fitting the experimental data for the length–diameter dependence to the kinetic model, we determine the power exponent, which represents the dimensionality of surface diffusion, and results to be different for planar vs. nonplanar nanowires. Excellent correlation between the model predictions and the data is obtained for surface-guided Au-catalyzed ZnSe and ZnS nanowires growing on both flat and faceted sapphire surfaces. These data are compared with those of nonplanar nanowire growth under similar conditions. The results indicate that, whereas nonplanar growth is usually dominated by surface diffusion of precursor adatoms over the nanowire walls, planar growth is dominated by surface diffusion over the substrate. This mechanism of planar nanowire growth can be extended to a broad range of material–substrate combinations for higher control toward large-scale integration into practical devices.
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Leshchenko E. D. i Dubrovskii V. G. "Modeling the growth of tapered nanowires on reflecting substrates". Technical Physics Letters 48, nr 12 (2022): 11. http://dx.doi.org/10.21883/tpl.2022.12.54937.19358.
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The formation of tapered self-catalyzed nanowires grown on reflecting substrates is studied theoretically. Within the model, the nanowire radius may be obtained as a function of length. The model describes the morphology of tapered nanowires. We study the influence of different growth parameters, including the III/V flux ratio and pitch, on the nanowire morphology. Keywords: III-V nanowires, morphology, self-focusing effect, modeling
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Pan, H., J. B. Yi, B. H. Liu, S. Thongmee, J. Ding, Yuan Ping Feng i Jian Yi Lin. "Magnetic Properties of Highly-Ordered Ni, Co and Their Alloy Nanowires in AAO Templates". Solid State Phenomena 111 (kwiecień 2006): 123–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.111.123.
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We have fabricated metal/alumina hybrid materials by electrodepositon of metal nanowires into nanopores of anodic aluminum oxide templates. Single crystalline Ni and Co nanowires have been successfully fabricated. Structural characterization (XRD and HRTEM) shows that the single crystalline Ni nanowire has a preferred orientation along (220) direction. The preferred orientation of Co nanowire is along (100). These single crystalline Ni and Co nanowires have exhibited excellent magnetic properties. Their alloy nanowires have exhibited a large shift in hysteresis, probably due to the surface oxidation and exchange bias effect.
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Dunaevskiy M. S. i Alekseev P. A. "Elastic deformations distribution in laterally bent conical nanowires". Semiconductors 56, nr 7 (2022): 461. http://dx.doi.org/10.21883/sc.2022.07.54759.06.
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The elastic deformations in the conical nanowires are considered. An analytical expression was obtained for the distribution of elastic deformations along the length of the conical nanowire. It was found that at certain cone angles in nanowire there is an extended area of sufficiently high deformations comparable or even large than the deformation at the base of the nanowire. So, for example, when bending the conical (conical coefficient a=-0.7) nanowire with length L=1 μm and radius R=50 nm by Delta z=200 nm, the maximum deformation values are εxx,max=8%, while more than 95% of the nanowire is deformed by >3%. Keywords: nanowires, elastic deformations, conical nanowires, Young's modulus.
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Morbec, J. M., i R. H. Miwa. "Theoretical Study of Carbon Clusters in Silicon Carbide Nanowires". Journal of Nanotechnology 2011 (2011): 1–8. http://dx.doi.org/10.1155/2011/203423.
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Using first-principles methods we performed a theoretical study of carbon clusters in silicon carbide (SiC) nanowires. We examined small clusters with carbon interstitials and antisites in hydrogen-passivated SiC nanowires growth along the [100] and [111] directions. The formation energies of these clusters were calculated as a function of the carbon concentration. We verified that the energetic stability of the carbon defects in SiC nanowires depends strongly on the composition of the nanowire surface: the energetically most favorable configuration in carbon-coated [100] SiC nanowire is not expected to occur in silicon-coated [100] SiC nanowire. The binding energies of some aggregates were also obtained, and they indicate that the formation of carbon clusters in SiC nanowires is energetically favored.
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Wang, Zan, Hua Wei Guan i Ke Dong Bi. "Thermal Conductivity of Hexagonal SiC Nanowire by Nonequilibrium Molecular Dynamics Simulations". Applied Mechanics and Materials 487 (styczeń 2014): 102–5. http://dx.doi.org/10.4028/www.scientific.net/amm.487.102.
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Using nonequilibrium Molecular Dynamics method, thermal properties of hexagonal 4H-SiC and 6H-SiC nanowires are investigated. The quantum errors between realistic temperatures and Molecular dynamics temperatures are rectified based on Density Functional Theory. Thermal conductivities of 4H-SiC and 6H-SiC nanowires are both simulated from 50K to 800K. The scale effect on the thermal conductivity of nanowire is also investigated by varying the nanowires length from 10nm to 130nm. Results indicate, if the length of phonon mean free path is shorter than that of nanowire, phonon-surface scattering will surpass boundary scattering to contribute thermal resistances. Therefore, the thermal conductivity of 4H-SiC or 6H-SiC nanowire is mainly determined by the comparability between the length of nanowires and phonon mean free path.
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Yang, Wenming, Chenjun Hao, Shengsen Zhang, Tianyang Zheng, Rong Zhu i Beiying Liu. "AC/DC Electric-Field-Assisted Growth of ZnO Nanowires for Gas Discharge". Materials 16, nr 1 (22.12.2022): 108. http://dx.doi.org/10.3390/ma16010108.
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Using ZnO nanowires as needle anodes in gas discharge is helpful for maintaining continuous discharge with a relatively low voltage. It is necessary that the ZnO nanowires are far enough apart to guarantee no electric field weakening and that the nanowire anodes are easy to assemble together with the discharging devices. An AC/DC electric-field-assisted wet chemical method is proposed in this paper. It was used to grow ZnO nanowires directly on discharging devices. The nanowires covered the whole electrode in the case in which only a DC field was applied. Moreover, the tips of the nanowires were scattered, similar to the results observed under the application of AC fields. The average distance between the tips of the highest nanowires was approximately equal to 4 μm, which almost meets the requirement of gas discharge. The research concerning growing ZnO nanowires directly on PCBs shown that, at the current time, ZnO nanowires on PCBs did not meet the requirements of gas discharge; however, in this study, the parameters regarding ZnO nanowire growth were established.
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Lee, Geun-Hyoung. "Branched MgO Nanowires Synthesized by Thermal Evaporation Method in Air at Atmospheric Pressure". Korean Journal of Metals and Materials 61, nr 6 (5.06.2023): 444–48. http://dx.doi.org/10.3365/kjmm.2023.61.6.444.
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MgO nanowires with a branched structure were fabricated using a thermal evaporation method in air at atmospheric pressure. The branched MgO nanowire was made up of two parts: a primary central nanowire trunk and lots of secondary nanowire branches. The branched MgO nanowires had a 4-fold symmetrical structure. The secondary nanowire branches grew perpendicular on the four side facets of the central nanowire trunks with square cross-sections. The nanowire branches also grew in a single row and were vertically well aligned in the same direction with each other. The scanning electron microscopy images of the branched nanowires grown at 1000<sup>o</sup>C showed that the diameter of branches gradually decreased along the growth direction and no catalyst particle was found at the tips of the branches, indicating that the branches were grown by a vapor-solid process. For the branched nanowires grown at 1150<sup>o</sup>C, spherical particles which were shown to be catalysts were observed at the tips of the branches. The chemical analysis by energy dispersive spectroscopy showed that the spherical particles were composed of Mg and O elements. These results suggest that the branches’ growth resulted from a self-catalyzed vapor-liquid-solid process. The structural characterization by X-ray diffraction confirmed that the branched MgO nanowires had a cubic lattice structure. The room temperature cathodoluminescence spectra of the branched MgO nanowires exhibited a very strong visible emission which was associated with oxygen vacancies.
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Sun, Yan Long, Li Min Dong, Tao Jiang, Cao Guo i Xiao Qi Zhang. "Effection of Additive on Aluminum Nitride Nano-Wire Synthesis by Double Decomposition Method". Advanced Materials Research 744 (sierpień 2013): 428–31. http://dx.doi.org/10.4028/www.scientific.net/amr.744.428.
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An method for making AlN(aluminum nitride) nanowires by double decomposition, and the effection of additives was described. Future more, the growth mechanism of AlN nanowire synthesis with addictive were analyzed. AlN nanowire were synthesis by he AlCl3 and NaN3 in stainless steel cauldron without solvent and using Mg and Zn as additive. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study characters of the AlN nanowire. It is shown that the process can produce AlN nanowire with mean diameters ranging from 50 to 100 nm at 450°C. The additive has effective facilitated on the synthesis of aluminum nitride nanowires, can improve the properties of aluminum nitride nanowire, minish the average diameter of aluminum nitride nanowires.
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Pereira, Alejandro, Guidobeth Sáez, Eduardo Saavedra i Juan Escrig. "Tunable Magnetic Properties of Interconnected Permalloy Nanowire Networks". Nanomaterials 13, nr 13 (29.06.2023): 1971. http://dx.doi.org/10.3390/nano13131971.
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In this study, we investigate the magnetic properties of interconnected permalloy nanowire networks using micromagnetic simulations. The effects of interconnectivity on the hysteresis curves, coercivity, and remanence of the nanowire networks are analyzed. Our results reveal intriguing characteristics of the hysteresis curves, including nonmonotonic behaviors of coercivity as a function of the position of horizontal nanowires relative to vertical nanowires. By introducing horizontal nanowires at specific positions, the coercivity of the nanowire networks can be enhanced without altering the material composition. The normalized remanence remains relatively constant regardless of the position of the horizontal wires, although it is lower in the interconnected nanowire arrays compared to nonconnected arrays. These findings provide valuable insights into the design and optimization of nanowire networks for applications requiring tailored magnetic properties.
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Maliakkal, Carina B., Daniel Jacobsson, Marcus Tornberg i Kimberly A. Dick. "Post-nucleation evolution of the liquid–solid interface in nanowire growth". Nanotechnology 33, nr 10 (17.12.2021): 105607. http://dx.doi.org/10.1088/1361-6528/ac3e8d.
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Abstract We study using in situ transmission electron microscopy the birth of GaAs nanowires from liquid Au–Ga catalysts on amorphous substrates. Lattice-resolved observations of the starting stages of growth are reported here for the first time. It reveals how the initial nanostructure evolves into a nanowire growing in a zincblende 〈111〉 or the equivalent wurtzite〈0001〉 direction. This growth direction(s) is what is typically observed in most III–V and II–VI nanowires. However, the reason for this preferential nanowire growth along this direction is still a dilemma. Based on the videos recorded shortly after the nucleation of nanowires, we argue that the lower catalyst droplet-nanowire interface energy of the {111} facet when zincblende (or the equivalent {0001} facet in wurtzite) is the reason for this direction selectivity in nanowires.
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Hara, Shinjiro. "Bottom-Up Formation of Vertical Free-Standing Semiconductor Nanowires Hybridized with Ferromagnetic Nanoclusters". Materials Science Forum 783-786 (maj 2014): 1990–95. http://dx.doi.org/10.4028/www.scientific.net/msf.783-786.1990.
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The author introduces and summarizes the results on bottom-up formation and structural characterizations obtained so far for the MnAs nanoclusters and MnAs/semiconductor nanowire hybrids. First, MnAs nanoclusters were grown by selective-area metal-organic vapor phase epitaxy. They had a hexagonal NiAs-type crystal structure. Their <00(0)1> direction was parallel to <111>B direction of zinc-blende-type GaAs substrates. Hybrid MnAs/GaAs nanowires, subsequently, were fabricated by combining selective-area metal-organic vapor phase epitaxy of GaAs nanowire templates and endotaxial MnAs nanoclustering on them. MnAs nanoclusters ordered at six ridges of hexagonal GaAs nanowires were formed possibly owing to more atomic steps between {0-11} crystal facets. In the case of hybrid MnA/InAs nanowires, MnAs nanoclusters were not formed only on the {0-11} side-walls, and/or ridges between them, but on the top {111}B crystal facets of hexagonal InAs nanowires. MnAs nanoclusters were formed much deeper into the InAs nanowires than into the GaAs nanowires. These facts are possibly due to the InAs nanowires are thermally less stable than the GaAs nanowires. Some of the hybrid MnA/InAs nanowires were bent at the parts where the MnAs nanoclusters were grown into the host nanowires mainly owing to the strain effects.
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Wu, Chi-Chang. "Silicon Nanowires Length and Numbers Dependence on Sensitivity of the Field-Effect Transistor Sensor for Hepatitis B Virus Surface Antigen Detection". Biosensors 12, nr 2 (12.02.2022): 115. http://dx.doi.org/10.3390/bios12020115.
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Silicon nanowire field effect transistor (NWFET) sensors have been demonstrated to have high sensitivity, are label free, and offer specific detection. This study explored the effect of nanowire dimensions on sensors’ sensitivity. We used sidewall spacer etching to fabricate polycrystalline silicon NWFET sensors. This method does not require expensive nanoscale exposure systems and reduces fabrication costs. We designed transistor sensors with nanowires of various lengths and numbers. Hepatitis B surface antigen (HBsAg) was used as the sensing target to explore the relationships of nanowire length and number with biomolecule detection. The experimental results revealed that the sensor with a 3 µm nanowire exhibited high sensitivity in detecting low concentrations of HBsAg. However, the sensor reached saturation when the biomolecule concentration exceeded 800 fg/mL. Sensors with 1.6 and 5 µm nanowires exhibited favorable linear sensing ranges at concentrations from 800 ag/mL to 800 pg/mL. The results regarding the number of nanowires revealed that the use of few nanowires in transistor sensors increases sensitivity. The results demonstrate the effects of nanowire dimensions on the silicon NWFET biosensors.
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Du, Yong, Hao Niu, Jun Li, Yunchen Dou, Shirley Shen, Runping Jia i Jiayue Xu. "Morphologies Tuning of Polypyrrole and Thermoelectric Properties of Polypyrrole Nanowire/Graphene Composites". Polymers 10, nr 10 (13.10.2018): 1143. http://dx.doi.org/10.3390/polym10101143.
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Polypyrrole (PPy) with different morphologies (e.g., particles, nanotubes, and nanowires) were successfully prepared by adding or without adding different kinds of surfactants through a chemical oxidative polymerization method, respectively. The results show that the morphologies of PPy can be effectively controlled and have a significantly effects on their thermoelectric properties. The PPy nanowires exhibit the highest electrical conductivity and Seebeck coefficient among the various PPy morphologies, such as particles, nanotubes, and nanowires, so PPy nanowires were chosen to prepare PPy nanowire/graphene thermoelectric composites via a soft template polymerization method using cetyltrimethyl ammonium bromide as the template. Both electrical conductivity and Seebeck coefficient of the PPy nanowire/graphene composites increased as the content of graphene increases from 0 to 20 wt %, and as the measured temperature increases from 300 K to 380 K, which leds to the same trend for the power factor. A highest power factor of 1.01 μWm−1K−2 at ~380 K was obtained for the PPy nanowire/graphene composites with 20 wt % PPy nanowire, which is about 3.3 times higher than that of the pure PPy nanowire.
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Wang, T., T. Jiang i X. Meng. "Gallium-assisted growth of InSb nanowire". Revista Mexicana de Física 65, nr 6 Nov-Dec (31.10.2019): 601. http://dx.doi.org/10.31349/revmexfis.65.601.
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Indium antimony (InSb) nanowires have been synthesized by chemical vapor deposition and we found that adding gallium as the other evaporation resource can increase the density of nanowires and no doping pollution. For the growth of InSb nanowire, Au film was annealed to form Au nanoparticles as catalysts and explain its catalytic principle. We thought that gallium which coated on the surface of Au nanoparticles assisted nucleation and growth of InSb nanowire in the early stage. The diameter of the InSb nanowires was 60–100nm and 1-5μm in length. The grown nanowires have good crystallinity. We found that the surface of InSb was oxidized, and the main oxide was indium oxide. We discovered the tip morphologies of nanowires are different and discussed the causes of this phenomenon in detail.
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Wang, Xue Hua, Gui Chen, Liang Yang, Cheng Yong Li i Peng Cai. "Preparation, Characterization and Magnetic Properties of Fe59Co41 Alloy Nanowires Using AC Electrochemical Deposition". Advanced Materials Research 152-153 (październik 2010): 963–66. http://dx.doi.org/10.4028/www.scientific.net/amr.152-153.963.
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Highly ordered Fe59Co41 alloy nanowires with a diameter of about 50 nm and length of about 4.1µm have been fabricated by alternating current (AC) electrodeposition into the anodic aluminum oxide templates. The morphology, structure and magnetic properties of Fe59Co41 alloy nanowires were characterized by TEM, EDS, XRD and VSM, respectively. The results indicate the Fe59Co41 nanowires with a high aspect ratio are very uniform and regular, which corresponds to the diameter of the nanochannel of the AAO membrane. XRD and HRTEM results show that the Fe59Co41 nanowires crystallize in hexagonal-close-packed (HCP) cobalt solid solution with [100] preferred orientation. VSM results show the Fe59Co41 nanowire arrays have a notable perpendicular magnetic anisotropy with easy magnetization axis along the nanowires. The magnetic properties of Fe59Co41 nanowire arrays are mainly predominated by shape anisotropy.
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GHAHREMANINEZHAD, A., A. DOLATI i M. KAZEMEINI. "GROWTH BEHAVIOR OF THE ELECTRODEPOSITED Co-Ni ALLOY NANOWIRES". International Journal of Modern Physics B 22, nr 18n19 (30.07.2008): 3013–22. http://dx.doi.org/10.1142/s0217979208047870.
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The Co - Ni alloy nanowires were electrodeposited into porous anodic aluminum oxide (AAO) templates. At the first, highly ordered AAO templates were synthesized by two-step anodizing of aluminum to increase pore ordering. Arrays of nanowires with diameter about 30 nm and length about 5000 nm were electrodeposited by alternating current. The composition and structure property of nanowires were investigated by EDX, SEM and TEM techniques. It was found that nanowire composition was related to ions concentration in solution and it was shown that at the optimum potential range of electrodeposition (17-19 V), a change at the potential was shown no strong effect on chemical composition of nanowires. It was observed that nano pores were filled continuously and so nanowires were dense with uniform composition in nanowire length.
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Sun, Jie, Xinxiang Yu, Zhutie Li, Junfeng Zhao, Pengcheng Zhu, Xiaoyan Dong, Zhigang Yu i in. "Ultrasonic Modification of Ag Nanowires and Their Applications in Flexible Transparent Film Heaters and SERS Detectors". Materials 12, nr 6 (18.03.2019): 893. http://dx.doi.org/10.3390/ma12060893.
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Ultrasonic morphology modification of silver (Ag) nanowires and their applications in transparent film heaters for defogging in electric vehicles and surface-enhanced Raman scattering (SERS) detectors have been studied. With 10 min ultrasonic treatment of Ag nanowires, the electro-thermal conversion capability of Ag nanowire based transparent film heaters is efficiently improved (about 50% increase in temperature rise), which can be mainly attributed to the cross-section area reduction and the serious agglomerations of the ultrasonic modified Ag nanowire films. Furthermore, the bending or fracture caused by deformation of Ag nanowires after ultrasonic treatment provides more hot spots for SERS, and therefore lead to a significant SERS signal enhancement. This work not only greatly improves the performance of Ag nanowire based transparent film heaters and SERS detectors, but provides a new way for the functional modification of Ag nanowires.
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Belim, Sergey V., i Igor V. Bychkov. "Magnetic Properties of 2D Nanowire Arrays: Computer Simulations". Materials 16, nr 9 (27.04.2023): 3425. http://dx.doi.org/10.3390/ma16093425.
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The paper considers a nanowires 2D array located in the nodes of a square lattice. Computer simulations use the Heisenberg model and Metropolis algorithm. The array consists of small nanowires that are monodomain. The exchange interaction orders the spins within a single nanowire. Dipole–dipole forces act between neighboring nanowires. The shape of an individual nanowire affects its magnetic anisotropy. Computer simulations examine the phase transition temperature and magnetization behavior of the system. The type of magnetic moments ordering in the array of nanowires depends on the orientation of their long axis. We consider two types of systems. The nanowires’ long axes are oriented perpendicular to the plane of their location in the first case. A dipole–dipole interaction results in first-type superantiferromagnetic ordering of the nanowires’ magnetic moments for such orientation. The nanowires’ long axes are oriented in the plane of the system in the second case. Dipole–dipole interaction results in second-type superantiferromagnetic ordering in such systems. The dependence of the phase transition temperature on the dipole–dipole interaction intensity is investigated.
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Shen, Chin-Li, Shu-Meng Yang i Kuo-Chang Lu. "Single Crystalline Higher Manganese Silicide Nanowire Arrays with Outstanding Physical Properties through Double Tube Chemical Vapor Deposition". Nanomaterials 10, nr 9 (19.09.2020): 1880. http://dx.doi.org/10.3390/nano10091880.
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In this work, we report a novel and efficient silicidation method to synthesize higher manganese silicide (HMS) nanowires with interesting characterization and physical properties. High density silicon nanowire arrays fabricated by chemical etching reacted with MnCl2 precursor through a unique double tube chemical vapor deposition (CVD) system, where we could enhance the vapor pressure of the precursor and provide stable Mn vapor with a sealing effect. It is crucial that the method enables the efficient formation of high quality higher manganese silicide nanowires without a change in morphology and aspect ratio during the process. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were utilized to characterize the HMS nanowires. High-resolution TEM studies confirm that the HMS nanowires were single crystalline Mn27Si47 nanowires of Nowotny Chimney Ladder crystal structures. Magnetic property measurements show that the Mn27Si47 nanowire arrays were ferromagnetic at room temperature with a Curie temperature of over 300 K, highly depending on the relationship between the direction of the applied electric field and the axial direction of the standing nanowire arrays. Field emission measurements indicate that the 20 μm long nanowires possessed a field enhancement factor of 3307. The excellent physical properties of the HMS nanowires (NWs) make them attractive choices for applications in spintronic devices and field emitters.
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Спирина, А. А., i Н. Л. Шварц. "Влияние температуры на морфологию планарных нанопроволок GaAs (моделирование)". Физика и техника полупроводников 54, nr 2 (2020): 160. http://dx.doi.org/10.21883/ftp.2020.02.48911.9270.
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Using a kinetic lattice Monte Carlo model, the self-catalyzed growth of planar GaAs nanowires was analyzed. The nanowire growth via the vapor-liquid-crystal mechanism was considered. The effect of temperature and the catalyst droplet location on the morphology and growth direction of planar GaAs nanowires was studied. For GaAs(111)A and GaAs(111)B substrates, a temperature range corresponding to stable growth of planar GaAs nanowires was revealed. The special asymmetric arrangement of droplets allows the one-directional nanowire growth.
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Salimitari, P., A. Behroudj i S. Strehle. "Aligned deposition of bottom-up grown nanowires by two-directional pressure-controlled contact printing". Nanotechnology 33, nr 23 (15.03.2022): 235301. http://dx.doi.org/10.1088/1361-6528/ac56f8.
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Abstract Aligned large-scale deposition of nanowires grown in a bottom-up manner with high yield is a persisting challenge but required to assemble single-nanowire devices effectively. Contact printing is a powerful strategy in this regard but requires so far adequate adjustment of the tribological surface interactions between nanowires and target substrate, e.g. by microtechnological surface patterning, chemical modifications or lift-off strategies. To expand the technological possibilities, we explored two-directional pressure-controlled contact printing as an alternative approach to efficiently transfer nanowires with controlled density and alignment angle onto target substrates through vertical-force control. To better understand this technology and the mechanical behavior of nanowires during the contact printing process, the dynamic bending behavior of nanowires under varying printing conditions is modeled by using the finite element method. We show that the density and angular orientation of transferred nanowires can be controlled using this three-axis printing approach, which thus enables potentially a controlled nanowire device fabrication on a large scale.
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Bai, Xiao Hui, i Dian Zhong Wen. "Study on Fabrication Pt Nanowires for Memristor". Applied Mechanics and Materials 58-60 (czerwiec 2011): 513–17. http://dx.doi.org/10.4028/www.scientific.net/amm.58-60.513.
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Introduced various preparation method of one dimensional nanowire and the merit and shortcoming of various methods, adopt two anodic oxidation method carry on oxadation to the aluminum sheet and Fabricate thickness about 15 ums, 50 nms nanohole diameter AAO template .In the H2PtCl6·6H2O+H3BO4 solutions carry on electrochemistry deposition to the AAO template.The deposited templates were characterized by scanning electron microscope (SEM ) , approval that growth speed of nanowires are the 1 um/h.After had electrochemistry deposited for 12h, the nanowire can pierce through AAO template.The length of nanowire is 15 ums, diameter is 50 nms. Nanowires are independent, they meet demand as conducting nanowires.
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Tatsuoka, Hirokazu, Wen Li, Er Chao Meng, Daisuke Ishikawa i Kaito Nakane. "Syntheses and Structural Control of Silicide, Oxide and Metallic Nano-Structured Materials". Solid State Phenomena 213 (marzec 2014): 35–41. http://dx.doi.org/10.4028/www.scientific.net/ssp.213.35.
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The structural control and morphological modification of a series of silicide, oxide and Ag metal nanostructures have been further discussed with reviews of nanostructure syntheses, such as CrSi2 nanowire bundles dendrites, MoSi2 nanosheets, α-Fe2O3 nanowires nanobelts, CuO/Cu2O nanowire axial heterostructures, ZrO2/SiOx and CrSi2/SiOx core/shell nanowires. In addition, the syntheses of Ag three-dimensional dendrites, two-dimensional dendrites, two-dimensional fractal structures, particles and nanowires also were discussed. Moreover, the structural and morphological properties of the nanostructures were examined. The structural control and morphological modifications of the nanostructures have been successfully demonstrated by the appropriate thermal treatments with specific starting materials. A large volume of silicide nanowire bundles, large area of oxide nanowire arrays and large area Ag nanostructure coatings were successfully fabricated.
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Koo, B. R., J. W. Bae i H. J. Ahn. "Improved Long-Term Stability of Transparent Conducting Electrodes Based on Double-Laminated Electrosprayed Antimony Tin Oxides and Ag Nanowires". Archives of Metallurgy and Materials 62, nr 2 (1.06.2017): 1275–79. http://dx.doi.org/10.1515/amm-2017-0192.
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AbstractWe fabricated double-laminated antimony tin oxide/Ag nanowire electrodes by spin-coating and electrospraying. Compared to pure Ag nanowire electrodes and single-laminated antimony tin oxide/Ag nanowire electrodes, the double-laminated antimony tin oxide/Ag nanowire electrodes had superior transparent conducting electrode performances with sheet resistance ~19.8 Ω/□ and optical transmittance ~81.9%; this was due to uniform distribution of the connected Ag nanowires because of double lamination of the metallic Ag nanowires without Ag aggregation despite subsequent microwave heating at 250°C. They also exhibited excellent and superior long-term chemical and thermal stabilities and adhesion to substrate because double-laminated antimony tin oxide thin films act as the protective layers between Ag nanowires, blocking Ag atoms penetration.
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Isaxon, Christina, Karin Lovén, Linus Ludvigsson, Sudhakar Sivakumar, Anders Gudmundsson, Maria E. Messing, Joakim Pagels i Maria Hedmer. "Workplace Emissions and Exposures During Semiconductor Nanowire Production, Post-production, and Maintenance Work". Annals of Work Exposures and Health 64, nr 1 (10.12.2019): 38–54. http://dx.doi.org/10.1093/annweh/wxz088.
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Abstract Background Nanowires are a high-aspect-ratio material of increasing interest for a wide range of applications. A new and promising method to produce nanowires is by aerotaxy, where the wires are grown in a continuous stream of gas. The aerotaxy method can grow nanowires much faster than by more conventional methods. Nanowires have important properties in common with asbestos fibers, which indicate that there can be potential health effects if exposure occurs. No conclusive exposure (or emission) data from aerotaxy-production of nanowires has so far been published. Methods Different work tasks during semiconductor nanowire production, post-production, and maintenance were studied. A combination of direct-reading instruments for number concentration (0.007–20 µm) and filter sampling was used to assess the emissions (a couple of centimeter from the emission sources), the exposure in the personal breathing zone (max 30 cm from nose–mouth), and the concentrations in the background zone (at least 3 m from any emission source). The filters were analyzed for metal dust composition and number concentration of nanowires. Various surfaces were sampled for nanowire contamination. Results The particle concentrations in the emission zone (measured with direct-reading instruments) were elevated during cleaning of arc discharge, manual reactor cleaning, exchange of nanowire outflow filters, and sonication of substrates with nanowires. In the case of cleaning of the arc discharge and manual reactor cleaning, the emissions affected the concentrations in the personal breathing zone and were high enough to also affect the concentrations in the background. Filter analysis with electron microscopy could confirm the presence of nanowires in some of the air samples. Conclusions Our results show that a major part of the potential for exposure occurs not during the actual manufacturing, but during the cleaning and maintenance procedures. The exposures and emissions were evaluated pre- and post-upscaling the production and showed that some work tasks (e.g. exchange of nanowire outflow filters and sonication of substrates with nanowires) increased the emissions post-upscaling.
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Zuo, Yan, Juan Tang, Xiao Tian Li, Yan Zhao, Hai Lan Gong i Shi Lun Qiu. "Electrodeposition of Ni and Ni-Cu Nanowires in Rectified Porous Anodic Alumina Membrane". Materials Science Forum 663-665 (listopad 2010): 1121–24. http://dx.doi.org/10.4028/www.scientific.net/msf.663-665.1121.
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Highly ordered Ni and Ni-Cu nanowires were electrodeposited into the micropores of the porous anodic alumina (PAA) template which was fabricated by the method of two-step anodizing and the thickness of barrier layer which was formed during the anodizing process was rectified by applying current limited anodization steps. The X-ray diffration (XRD) was used to characterize the Ni and Ni-Cu nanowires and the morphology of these nanowires was examined by the way of scanning electron microscopy (SEM). The SQUID magnetometry was used to investigate the magetic properties of the nanowires. It is found that the coercivity and remanence ratio of Ni-Cu nanowire is larger than that of Ni nanowire.
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Guan, Yanchao, Genwang Wang, Shouxin Zhao, Lianfu Wang, Ye Ding i Lijun Yang. "The Realization of ZnO Nanowires Interconnection through Femtosecond Laser Irradiation of Ag Nanoparticles Solder". Applied Sciences 12, nr 3 (19.01.2022): 1004. http://dx.doi.org/10.3390/app12031004.
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Nanowire interconnection is the basis for the construction and integration of micro-nano functional devices. But so far, it is still difficult to achieve a reliable interconnection of metal oxide nanowires. This letter proposes an approach for soldering ZnO nanowires through femtosecond laser irradiation of Ag nanoparticles solder. In this paper, the effect of femtosecond laser fluence and irradiation time on the morphology of Ag solders and the interconnection state of ZnO nanowires are studied, respectively. The I-V electrical characterization of nanowire interconnection before and after soldering is completed. The results demonstrate that ZnO nanowires achieve better interconnection. The UV light response of the ZnO-Ag-ZnO interconnection structure after soldering is investigated. The approach confirms the effectiveness of a femtosecond irradiated metal nanoparticles solder to achieve metal oxide interconnection, offering the prospect of more metal oxide nanowires interconnection and device development.