Gotowe bibliografie tematyczne / Nanowires

Gotowa bibliografia na temat „Nanowires”

Autor: Grafiati
Data publikacji: 4 czerwca 2021
Data aktualizacji: 28 lipca 2024

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Artykuły w czasopismach na temat "Nanowires"

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Khurshid, Hafsa, Rahana Yoosuf, Bashar Afif Issa, Atta G. Attaelmanan i George Hadjipanayis. "Tuning Easy Magnetization Direction and Magnetostatic Interactions in High Aspect Ratio Nanowires". Nanomaterials 11, nr 11 (12.11.2021): 3042. http://dx.doi.org/10.3390/nano11113042.

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Cobalt nanowires have been synthesized by electrochemical deposition using track-etched anodized aluminum oxide (AAO) templates. Nanowires with varying spacing-to-diameter ratios were prepared, and their magnetic properties were investigated. It is found that the nanowires’ easy magnetization direction switches from parallel to perpendicular to the nanowire growth direction when the nanowire’s spacing-to-diameter ratio is reduced below 0.7, or when the nanowires’ packing density is increased above 5%. Upon further reduction in the spacing-to-diameter ratio, nanowires’ magnetic properties exhibit an isotropic behavior. Apart from shape anisotropy, strong dipolar interactions among nanowires facilitate additional uniaxial anisotropy, favoring an easy magnetization direction perpendicular to their growth direction. The magnetic interactions among the nanowires were studied using the standard method of remanence curves. The demagnetization curves and Delta m (Δm) plots showed that the nanowires interact via dipolar interactions that act as an additional uniaxial anisotropy favoring an easy magnetization direction perpendicular to the nanowire growth direction. The broadening of the dipolar component of Δm plots indicate an increase in the switching field distribution with the increase in the nanowires’ diameter. Our findings provide an important insight into the magnetic behavior of cobalt nanowires, meaning that it is crucial to design them according to the specific requirements for the application purposes.
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Podlaha, Elizabeth J., Mohammadsadegh Beheshti, Deyang Li i Sunggook Park. "Fe-Ni-Co Electrodeposited Nanowires Decorated with Au". ECS Meeting Abstracts MA2022-01, nr 24 (7.07.2022): 2487. http://dx.doi.org/10.1149/ma2022-01242487mtgabs.

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Alloy nanowires containing Fe, Ni and Co are of interest as electrode materials in miniaturized devices due to their ability to align them under a magnetic field. In order to improve their resistivity while retaining their magnetic behavior, Fe-Ni-Co nanowires were electrodeposited and decorated with Au; single nanowires were then further characterized (Fig. 1). The nanowires were deposition under a constant applied potential within a nanoscale alumina template, followed by dissolution of the membrane, release of the nanowires, and subsequent treatment in a gold acid electrolyte. Au clusters formed on the Fe-Ni-Co surface through simultaneous displacement and corrosion reactions. The morphology, composition and structure was examined before and after modification, revealing a change in crystallinity and composition that impacted the nanowire’s electrical and magnetic properties. Transferring a single nanowire to a lithographically prepared two-point probe enabled the electrical and magnetic characterization of the Au decorated nanowire. Averaging results of quadruplicate replicates, a low coverage of discontinuous Au clusters on Fe-Ni-Co nanowires significantly decreased the resistivity, not attributed entirely to the lower resistivity of Au, but as a consequence of changes of the Fe-Ni-Co crystallinity. A high coverage of the Fe-Ni-Co by Au had no further benefit, and even increased the resistivity. Since bulk gold is diamagnetic and decoration of Au onto the Fe-Ni-Co nanowires may compromise the overall magnetic property, the magnetoresistance and electron mobility were determined. Both decreased, as expected, with coverage of Au clusters on the nanowires, suggesting that there may be an optimal cluster density for modifying the Fe-Ni-Co nanowires. Figure 1. Electrodeposited nanowires initially amorphous then decorated with Au showing a change in crystallinity and subsequent characterization with a two-point probe. Figure 1
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Kolmakov, Andrei, Xihong Chen i Martin Moskovits. "Functionalizing Nanowires with Catalytic Nanoparticles for Gas Sensing Application". Journal of Nanoscience and Nanotechnology 8, nr 1 (1.01.2008): 111–21. http://dx.doi.org/10.1166/jnn.2008.n10.

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Metal oxide semiconducting nanowires are among the most promising materials systems for use as conductometric gas sensors. These systems function by converting surface chemical processes, often catalytic processes, into observable conductance variations in the nanowire. The surface properties, and hence the sensing properties of these devices can be altered dramatically improving the sensitivity and selectivity, by the deposition of catalytic metal nanoparticles on the nanowire's surface. This leads not only to promising sensor strategies but to a route for understanding some of the fundamental science occurring on these nanoparticles and at the metal/nanowire junction. In particular studying these systems can lead to a better understanding of the influence of the catalyst particle on the electronic structure of the nanowire and its electron transport. This report surveys results obtained so far in this area. In particular, the comparative sensing performance of single quasi-1D chemiresistors (i.e., nanowires or nanobelts) before and after surface decoration with noble metal catalyst particles show significant improvement in sensitivity toward oxidizing and reducing gases. Moreover, one finds that the sensing mechanism can depend dramatically on the degree of metal coverage of the nanowire.
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Hsieh, S. H., S. T. Ho i W. J. Chen. "Silicon Nanowires with MoSxand Pt as Electrocatalysts for Hydrogen Evolution Reaction". Journal of Nanomaterials 2016 (2016): 1–10. http://dx.doi.org/10.1155/2016/6974646.

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A convenient method was used for synthesizing Pt-nanoparticle/MoSx/silicon nanowires nanocomposites. Obtained Pt-MoSx/silicon nanowires electrocatalysts were characterized by transmission electron microscopy (TEM). The hydrogen evolution reaction efficiency of the Pt-MoSx/silicon nanowire nanocomposite catalysts was assessed by examining polarization and electrolysis measurements under solar light irradiations. The electrochemical characterizations demonstrate that Pt-MoSx/silicon nanowire electrodes exhibited an excellent catalytic activity for hydrogen evolution reaction in an acidic electrolyte. The hydrogen production capability of Pt-MoSx/silicon nanowires is also comparable toMoSx/silicon nanowires and Pt/silicon nanowires. Electrochemical impedance spectroscopy experiments suggest that the enhanced performance of Pt-MoSx/silicon nanowires can be attributed to the fast electron transfer between Pt-MoSx/silicon nanowire electrodes and electrolyte interfaces.
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Diao, Yu, Lei Liu, Sihao Xia i Yike Kong. "Differences in optoelectronic properties between H-saturated and unsaturated GaN nanowires with DFT method". International Journal of Modern Physics B 31, nr 12 (10.05.2017): 1750084. http://dx.doi.org/10.1142/s0217979217500849.

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To investigate the influences of dangling bonds on GaN nanowires surface, the differences in optoelectronic properties between H-saturated and unsaturated GaN nanowires are researched through first-principles study. The GaN nanowires along the [0001] growth direction with diameters of 3.7, 7.5 and 9.5 Å are considered. According to the results, H-saturated GaN nanowires are more stable than the unsaturated ones. With increasing nanowire diameter, unsaturated GaN nanowires become more stable, while the stability of H-saturated GaN nanowires has little change. After geometry optimization, the atomic displacements of unsaturated and H-saturated models are almost reversed. In (0001) crystal plane, Ga atoms tend to move inwards and N atoms tend to move outwards slightly for the unsaturated nanowires, while Ga atoms tend to move outwards and N atoms tend to move inwards slightly for the H-saturated nanowires. Besides, with increasing nanowire diameter, the conduction band minimum of H-saturated nanowire moves to the lower energy side, while that of the unsaturated nanowire changes slightly. The bandgaps of H-saturated nanowires are approaching to bulk GaN as the diameter increases. Absorption curves and reflectivity curves of the unsaturated and H-saturated nanowires exhibit the same trend with the change of energy except the H-saturated models which show larger variations. Through all the calculated results above, we can better understand the effects of dangling bonds on the optoelectronic properties of GaN nanowires and select more proper calculation models and methods for other calculations.
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Olszewski, Karol, Marta Sobanska, Vladimir G. Dubrovskii, Egor D. Leshchenko, Aleksandra Wierzbicka i Zbigniew R. Zytkiewicz. "Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers". Nanomaterials 13, nr 18 (19.09.2023): 2587. http://dx.doi.org/10.3390/nano13182587.

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GaN nanowires grown on metal substrates have attracted increasing interest for a wide range of applications. Herein, we report GaN nanowires grown by plasma-assisted molecular beam epitaxy on thin polycrystalline ZrN buffer layers, sputtered onto Si(111) substrates. The nanowire orientation was studied by X-ray diffraction and scanning electron microscopy, and then described within a model as a function of the Ga beam angle, nanowire tilt angle, and substrate rotation. We show that vertically aligned nanowires grow faster than inclined nanowires, which leads to an interesting effect of geometrical selection of the nanowire orientation in the directional molecular beam epitaxy technique. After a given growth time, this effect depends on the nanowire surface density. At low density, the nanowires continue to grow with random orientations as nucleated. At high density, the effect of preferential growth induced by the unidirectional supply of the material in MBE starts to dominate. Faster growing nanowires with smaller tilt angles shadow more inclined nanowires that grow slower. This helps to obtain more regular ensembles of vertically oriented GaN nanowires despite their random position induced by the metallic grains at nucleation. The obtained dense ensembles of vertically aligned GaN nanowires on ZrN/Si(111) surfaces are highly relevant for device applications. Importantly, our results are not specific for GaN nanowires on ZrN buffers, and should be relevant for any nanowires that are epitaxially linked to the randomly oriented surface grains in the directional molecular beam epitaxy.
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Wu, Phillip M., Lars Samuelson i Heiner Linke. "Toward 3D Integration of 1D Conductors: Junctions of InAs Nanowires". Journal of Nanomaterials 2011 (2011): 1–5. http://dx.doi.org/10.1155/2011/268149.

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A vision and one of the next challenges in nanoelectronics is the 3D integration of nanowire building blocks. Here we show that capillary forces associated with a liquid-air meniscus between two nanowires provides a simple, controllable technique to bend vertical nanowires into designed, interconnected assemblies. We characterize the electric nature of the junctions between crossed nanowires in a lateral geometry, which is one type of basic unit that can be found in interconnected-bent vertical nanowires. The crossed nanowire junction is capacitive in nature, and we demonstrate that one nanowire can be used to field effect gate the other nanowire, allowing for the possibility to develop extremely narrow conducting channels in nanowire planar or 3D electronic devices.
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Rai, Rajesh K., i Chandan Srivastava. "Nonequilibrium Microstructures for Ag–Ni Nanowires". Microscopy and Microanalysis 21, nr 2 (6.02.2015): 491–97. http://dx.doi.org/10.1017/s1431927615000069.

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AbstractThis work illustrates that a variety of nanowire microstructures can be obtained either by controlling the nanowire formation kinetics or by suitable thermal processing of as-deposited nanowires with nonequilibrium metastable microstructure. In the present work, 200-nm diameter Ag–Ni nanowires with similar compositions, but with significantly different microstructures, were electrodeposited. A 15 mA deposition current produced nanowires in which Ag-rich crystalline nanoparticles were embedded in a Ni-rich amorphous matrix. A 3 mA deposition current produced nanowires in which an Ag-rich crystalline phase formed a backbone-like configuration in the axial region of the nanowire, whereas the peripheral region contained Ni-rich nanocrystalline and amorphous phases. Isothermal annealing of the nanowires illustrated a phase evolution pathway that was extremely sensitive to the initial nanowire microstructure.
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Arjmand, Tabassom, Maxime Legallais, Thi Thu Thuy Nguyen, Pauline Serre, Monica Vallejo-Perez, Fanny Morisot, Bassem Salem i Céline Ternon. "Functional Devices from Bottom-Up Silicon Nanowires: A Review". Nanomaterials 12, nr 7 (22.03.2022): 1043. http://dx.doi.org/10.3390/nano12071043.

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This paper summarizes some of the essential aspects for the fabrication of functional devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting nanowires in functional devices, from single nanowires to large assemblies of nanowires such as nanonets (two-dimensional arrays of randomly oriented nanowires), are briefly reviewed. Subsequently, the main properties of nanowires are discussed followed by those of nanonets that benefit from the large numbers of nanowires involved. After describing the main techniques used for the growth of nanowires, in the context of functional device fabrication, the different techniques used for nanowire manipulation are largely presented as they constitute one of the first fundamental steps that allows the nanowire positioning necessary to start the integration process. The advantages and disadvantages of each of these manipulation techniques are discussed. Then, the main families of nanowire-based transistors are presented; their most common integration routes and the electrical performance of the resulting devices are also presented and compared in order to highlight the relevance of these different geometries. Because they can be bottlenecks, the key technological elements necessary for the integration of silicon nanowires are detailed: the sintering technique, the importance of surface and interface engineering, and the key role of silicidation for good device performance. Finally the main application areas for these silicon nanowire devices are reviewed.
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Lee, Sun Sook, Hyun Jin Kim, Taek-Mo Chung, Young Kuk Lee, Chang Gyoun Kim i Ki-Seok An. "Fabrication of Nanocomposite Based on ZnO Nanowire". Journal of Nanoscience and Nanotechnology 8, nr 9 (1.09.2008): 4895–98. http://dx.doi.org/10.1166/jnn.2008.ic80.

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ZnO-NiO core–shell nanowires and Ni-ZnO nanoparticle–nanowire composites have been synthesized by atomic layer deposition (ALD) and H2 thermal reduction, respectively. Grown ZnO nanowires on Si substrates by vapor transport method were used as templates for the growth of NiO layers. In order to prevent interfacial interaction between deposited NiO and ZnO nanowires templates by the reaction at low temperature and to precisely control the thickness of NiO layer, ALD technique was suitably employed to form the ZnO-NiO core–shell nanowires. All surface area of ZnO nanowires was completely and uniformly covered by amorphous NiO layers at low temperature of 130 °C. The Ni-ZnO nanoparticle–nanowire composites were achieved by the thermal reduction of the ZnO-NiO core–shell nanowires at H2 atmosphere. The density of Ni nanoparticles on ZnO nanowires was roughly related to the pre-deposited NiO thickness and the inter-diffusion of Ni into the ZnO nanowire was not observed.
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Rozprawy doktorskie na temat "Nanowires"

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Pfüller, Carsten. "Optical properties of single semiconductor nanowires and nanowire ensembles". Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2011. http://dx.doi.org/10.18452/16360.

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Diese Arbeit beschreibt die optische Charakterisierung mittels Photolumineszenzspektroskopie (PL) von Halbleiter-Nanodrähten (ND) im allgemeinen und einzelnen GaN-ND und GaN-ND-Ensembles im speziellen. ND werden oftmals als vielversprechende Bausteine zukünftiger, kleinster Bauele- mente bezeichnet. Diese Vision beruht insbesondere auf einigen attraktiven Eigenheiten, die ND im allgemeinen zugeschrieben werden. Im ersten Teil dieser Arbeit werden exemplarisch einige dieser Eigenschaften näher untersucht. So wird anhand von temperaturabhängigen PL-Messungen an Au- und selbstinduzierten GaAs/(Al,Ga)As-ND der Einfluss des Keimmaterials auf die PL der ND untersucht. Weiterhin werden die optischen Eigenschaften von ZnO-ND untersucht, die auf Si-, Saphir- und ZnO-Substraten gewachsen wurden. Die optische Charakterisierung von GaN-ND nimmt den Hauptteil dieser Arbeit ein. Die detaillierte Untersuchung einzelner GaN-ND und von GaN-ND-Ensembles zeigt die Relevanz des großen Oberflächen-zu-Volumen-Verhältnisses und dass jeder ND ganz eigene optische Eigenschaften aufweist. Die unerwartet starke Verbreiterung des strahlenden Übergangs donatorgebundener Exzitonen wird durch das vermehrte Auftreten von Oberflächendonatoren erklärt, deren statistische Relevanz durch PL-Messungen an einzelnen ausgestreuten und freistehenden GaN-ND nachgewiesen werden kann. Weiterhin wird der Einfluss elektrischer Felder auf die optischen Eigenschaften von GaN-ND ermittelt. Die Ein- und Auskopplung von Licht mit GaN ND wird mithilfe von Reflektanz- und Ramanmessungen bestimmt. Die zentralen Ergebnisse dieser Arbeit motivieren die Einführung eines Modells, dass die typischerweise nichtexponentielle Rekombinationsdynamik in ND-Ensemblen erklärt. Es basiert auf einer Verteilung der Rekombinationsraten. Vorläufige Ergebnisse dieses Modells beschreiben das nichtexponentielle Rekombinationdynamik in GaN ND-Ensemblen zufriedenstellend und erlauben eine Abschätzung ihrer internen Quanteneffizienz.
This thesis presents a detailed investigation of the optical properties of semiconductor nanowires (NWs) in general and single GaN NWs and GaN NW ensembles in particular by photoluminescence (PL) spectroscopy. NWs are often considered as potential building blocks for future nanometer-scaled devices. This vision is based on several attractive features that are generally ascribed to NWs. In the first part of the thesis, some of these features are examined using semiconductor NWs of different materials. On the basis of the temperature-dependent PL of Au- and self-assisted GaAs/(Al,Ga)As core-shell NWs, the influence of foreign catalyst particles on the optical properties of NWs is investigated. The effect of the substrate choice is studied by comparing the PL of ZnO NWs grown on Si, Sapphire, and ZnO substrates. The major part of this thesis discusses the optical properties of GaN NWs. The investigation of the PL of single GaN NWs and GaN NW ensembles reveals the significance of their large surface-to-volume ratio and that each NW exhibits its own individual recombination behavior. An unexpected broadening of the donor-bound exciton transition is explained by the abundant presence of surface donors in NWs. The existence and statistical relevance of these surface donors is confirmed by PL experiments of single GaN NWs which are either dispersed or free-standing. Furthermore, the influence of electric fields on the optical properties of GaN NWs is investigated and the coupling of light with GaN NWs is studied by reflectance and Raman measurements. The central results of this thesis motivate the introduction of a model that explains the typically observed nonexponential recombination dynamics in NW ensembles. It is based on a distribution of recombination rates. Preliminary simulations using this model describe the nonexponential decay of GaN NW ensembles satisfactorily and allow for an estimation of their internal quantum efficiency.
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Machin, Sophie Elizabeth. "Metal oxide nanowires". Thesis, University of Cambridge, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648214.

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Rudolph, Andreas [Verfasser], i Werner [Akademischer Betreuer] Wegscheider. "MBE growth of GaAs nanowires and nanowire heterostructures / Andreas Rudolph. Betreuer: Werner Wegscheider". Regensburg : Universitätsbibliothek Regensburg, 2012. http://d-nb.info/1025386205/34.

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Woodruff, Jacob Huffman. "Deterministic germanium nanowire growth : controlling the position, diameter, and orientaion of germanium nanowires /". May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

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Mrzel, A., A. Kovic, A. Jesih i M. Vilfan. "Decoration of MoSI Nanowires with Platinum Nanoparticles and Transformation into Molybdenum-nanowire Nased Networks". Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35168.

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In this communication, we present solution-based coating procedure of MoSI nanowires (NW) with platinum nanoparticles. The average particle diameter was found to be around 2.82 nm, showing a narrow size distribution. This single-step in situ reduction method at room temperature in water solution can easily be applied for large-scale applications. We also prepared two-dimensional networks of MoSI NW bundles by deposition via spraying from a purified stable dispersion in acetonitrile onto NaCl crystals and nonconductive silicon wafer with pre-assembled molybdenum electrodes. The formation of a conductive molybdenum network was achieved by annealing in hydrogen due to coalescence of the templates MoSI bundles during transformation. Stable water dispersion of molybdenum NW network was prepared by simply dissolving the NaCl substrate with molybdenum network on the surface. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35168
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Evans, G. J. "Transport in silicon nanowires". Thesis, University of Cambridge, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.598915.

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This thesis models the electrical breakup of geometrically uniform heavily doped silicon nanowires under the action of the random dopant potential. A self-consistent Thomas-Fermi model is used to show the natural formation of islands and structured characteristics of the system are presented. The island's electrical exhibits Coulomb blockade which is a single electronic effect by which the transport of electrons is strongly affected by the discrete nature of the current and where electron-electron repulsion can prevent current flowing. The system is modelled by calculation of the full capacitance matrix, an approximation to the tunnel resistance matrix and a single electron transport simulator, from which the I-V characteristics of a particular nanowire can be simulated. An electrical characteristic of the wire is the threshold voltage and is the point at which it first starts to conduct. However, extraneous charge in the environment (so-called offset charge) can change the device's characteristics and hence the threshold voltage. The numerical evaluation of the threshold voltage distribution for the nanowires is performed for a few examples before developing an analytical approximation to the distribution under offset charge disorder. The approximation is a geometrical interpretation of the phase space describing the device and the limits of applicability are discussed and in particular a two-island system is investigated. Negative differential conductance is shown to be present even in a two-island system and is explained in geometrical terms.
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Siddiqui, Saima Afroz. "Magnetostatic interaction in nanowires". Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/93838.

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Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 61-65).
Nonvolatile memory and logic devices rely on the manipulation of domain walls in magnetic nanowires, and scaling of these devices requires an understanding of domain wall behavior as a function of the wire width. Due to the increased importance of edge roughness and microstructure in narrow lines, domain wall pinning increases dramatically as the wire dimensions decrease and stochastic behavior is expected depending on the distribution of pinning sites. This work reports on the field driven domain wall statistics in sub-100 nm wide nanowires made from Co films of 8 nm thickness made by an electron beam lithography and etching process that minimizes edge roughness.
by Saima Afroz Siddiqui.
S.M.
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Kulmala, Tero Samuli. "Nanowires and graphene nanoelectronics". Thesis, University of Cambridge, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608195.

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Fasoli, Andrea. "Nanowires and nanoribbons nanoelectronics". Thesis, University of Cambridge, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608660.

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Lin, Yu-Ming 1974. "Thermoelectric properties of Bi₁₋x̳Sbx̳ nanowires and lead salt superlattice nanowires". Thesis, Massachusetts Institute of Technology, 2003. http://hdl.handle.net/1721.1/17593.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2003.
In title on t.p., double-underscored "x" appears as subscript.
Includes bibliographical references (p. 138-147).
This thesis involves an extensive experimental and theoretical study of the thermoelectric-related transport properties of BilxSbx nanowires, and presents a theoretical framework for predicting the electrical properties of superlattice nanowires. A template-assisted fabrication scheme is employed to synthesize Bi-based nanowires by pressure injecting liquid metal alloys into the hexagonally packed cylindrical pores of anodic alumina. These nanowires possess a very high crystalline quality with a diameter-dependent crystallographic orientation along the wire axis. A theoretical model for Bil-Sbx nanowires is developed, taking into consideration the effects of cylindrical wire boundary, multiple and anisotropic carrier pockets, and non-parabolic dispersion relations. A unique semimetal-semiconductor (SM-SC) transition is predicted for these nanowires as the wire diameter decreases or as the Sb concentration increases. Also, an unusual physical phenomenon involving a very high hole density of states due to the coalescence of 10 hole carrier pockets, which is especially advantageous for improving the thermoelectric performance of p-type materials, is uncovered for BilxSbx nanowires. Various transport measurements are reported for Bi-related nanowire arrays as a function of temperature, wire diameter, Sb content, and magnetic field. R(T) measurements show distinct T dependences for semimetallic and semiconducting nanowires, as predicted by the theory, and the condition for the SM-SC transition can be clearly identified. Enhanced thermopower is observed for BilxSbx nanowires as the diameter decreases or as the Sb content increases, indicating that both quantum confinement effects and Sb alloying effects are important for improving the thermo-electric performance.
(cont.) The theoretical model is further extended to study transport properties of Te-doped Bi nanowires and Sb nanowires, and good agreement between theoretical predictions and experimental results is obtained. A model for superlattice nanowires is presented to evaluate their potential for thermoelectric applications. Thermoelectric properties of superlattice nanowires made of various lead salts (PbS, PbSe, and PbTe) are investigated as a function of segment length, wire diameter, crystal orientation along the wire axis, and length ratio of the constituent nanodots. An interesting inversion of the potential barrier and well induced by quantum confinement is predicted in superlattice nanowires as the wire diameter decreases. ZT values higher than 4 and 6 are predicted for 5 nm-diameter PbSe/PbS and PbTe/PbSe superlattice nanowires, respectively, at 77K, and these ZT values are significantly larger than those of their corresponding alloy nanowires. For a given superlattice period, the ZT value can be further improved by adopting different segment lengths for the two constituent materials. The model developed here not only can determine the optimal superlattice nanowire parameters (segment length, diameter, materials, and doping level) for thermoelectric applications, but also can be extended to other superlattice systems, such as 3D quantum dot arrays ...
by Yu-Ming Lin.
Ph.D.
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Książki na temat "Nanowires"

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Serena, P. A., i N. García, red. Nanowires. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8837-9.

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Zhang, Anqi, Gengfeng Zheng i Charles M. Lieber. Nanowires. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-41981-7.

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Gupta, Ram K. Nanowires. Boca Raton: CRC Press, 2023. http://dx.doi.org/10.1201/9781003296621.

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Lu, Wei, i Jie Xiang, red. Semiconductor Nanowires. Cambridge: Royal Society of Chemistry, 2014. http://dx.doi.org/10.1039/9781782625209.

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Bezryadin, Alexey. Superconductivity in Nanowires. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2012. http://dx.doi.org/10.1002/9783527651931.

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Wang, Zhong Lin, red. Nanowires and Nanobelts. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-0-387-28745-4.

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Wang, Zhong Lin. Nanowires and Nanobelts. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-0-387-28747-8.

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D, Sattler Klaus, red. Nanotubes and nanowires. Boca Raton: Taylor & Francis, 2009.

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John, Burke Peter, red. Nanotubes and nanowires. Hackensack, N.J: World Scientific Pub Co Inc, 2007.

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S, Bandyopadhyay, i Nalwa Hari Singh 1954-, red. Quantum dots and nanowires. Stevenson Ranch, Calif: American Scientific Publishers, 2003.

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Części książek na temat "Nanowires"

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Landauer, Rolf. "Conductance is Transmission". W Nanowires, 1–7. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8837-9_1.

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Blencowe, M. P. "Using Non-Equilibrium Acoustic Phonons to Probe Quantum Wires". W Nanowires, 143–53. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8837-9_10.

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Gorelik, L. Y., S. I. Kulinich, Y. M. Galperin, R. I. Shekhter i M. Jonson. "Pumping of Energy into a Ballistic Quantum Ring — An Exactly Solvable Model". W Nanowires, 155–69. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8837-9_11.

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Costa-Krämer, J. L., N. Garcia, P. Garcia-Mochales, M. I. Marques i P. A. Serena. "Metallic Nanowires: Conductance Statistics, Stability, IV Curves, and Magnetism". W Nanowires, 171–90. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8837-9_12.

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Olesen, L., K. Hansen, E. Lægsgaard, I. Stensgaard i F. Besenbacher. "Metallic Nanowires: Formation and Quantized Conductance". W Nanowires, 191–210. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8837-9_13.

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Baró, A. M. "Electrical Conductance and Atomic Ordering in Metallic Nanowires". W Nanowires, 211–18. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8837-9_14.

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Salisbury, B. E., i R. L. Whetten. "Stability and Reversibility of Conductance Steps in Metallic Nanowires under Ordinary Ambience". W Nanowires, 219–26. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8837-9_15.

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Heer, W. A., i D. Ugarte. "Fractionally Quantized Conductances in Ballistic Metal Nanowires and Carbon Nanotube Networks". W Nanowires, 227–36. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8837-9_16.

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Olin, H., J. L. Costa-Krämer, N. Garcia, S. E. Kubatkin i T. Claeson. "Conductance Quantization in Gold Nanowires at Low Temperature". W Nanowires, 237–42. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8837-9_17.

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García, N., J. L. Costa-Krämer i H. Olin. "Quantized Conductance in Bismuth Nanowires at 4K". W Nanowires, 243–50. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-8837-9_18.

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Streszczenia konferencji na temat "Nanowires"

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Liang, Jianyu, i Zhenhai Xia. "Synthesis and Properties of Cobalt Nanowires". W 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems. ASMEDC, 2007. http://dx.doi.org/10.1115/mnc2007-21298.

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Understanding the structure and properties of metal nanowires is critical for the atomic-scale manipulation, design and application of those materials. Currently, active research on structure and behavior of various metallic nanowires has been carried out by computer simulation. Much experimental work has been done for synthesizing various metal nanowires by many different methods. To experimentally explore the mechanism of the behavior of and the development of structures in the nanowires, it is desirable to have the capability of synthesis various metal nanowires with controlled size, length, uniformity and aspect ratio. It is also desirable to further process those metal nanowires to engineer their properties. In our study, a template assisted fabrication method has been employed to fabricate various metal nanowire arrays, including cobalt, iron and nickel. This fabrication method offers us command over the size and length of the nanowires with excellent uniformity. Heat treatments were used to further process the metal nanowires. The structure of cobalt nanowire array has been investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Mechanical properties of the metal nanowire array will be investigated through nanoindentation and atomic force microscopy (AFM).
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Wingert, Matthew C., Jaeyun Moon, Zack Chen, Jie Xiang i Renkun Chen. "Thermal Conductivity Measurement of Thin Nanowires". W ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-65493.

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Semiconductor nanowires hold great promise for applications such as nano-electronics and energy conversion. A detailed knowledge of the thermal properties of the nanowire materials is essential for proper thermal management in nano-devices and thermal energy conversion. Prior thermal measurements on individual nanowires have shown that nanowires have reduced lattice thermal conductivity and, in some cases, enhanced thermoelectric properties. However, such thermal measurements are limited to nanowire thermal conductance of the order of 1 nW/K and are typically limited to nanowire diameters greater than 20 nm. Measurements to obtain the thermal conductivities of single nanowires with smaller diameter nanowires, which may exhibit even lower thermal conductivity and possibly quantum confinement effect at low temperature, have proven elusive. Herein, we demonstrated an experimental technique with improved measurement sensitivity that is capable of measuring the thermal conductance of 10 pW/K. This more sensitive technique overcomes several issues with current instrumentations and provides a tool for characterizing the properties of much smaller diameter nanowires, such as nanowires with 1 W/m-K thermal conductivity, 10 nm diameter and 1 μm length. Measurement enabled by this measurement platform will improve our understanding of thermal transport in confined nanostructures.
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Samuel, B. A., i M. A. Haque. "Thermo Electrical Characterization of Pyrolyzed Polyfurfuryl Alcohol Nanowires". W ASME 2007 International Mechanical Engineering Congress and Exposition. ASMEDC, 2007. http://dx.doi.org/10.1115/imece2007-43359.

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We present experimental results on the electrical characteristics of carbonaceous nanowires using micro-fabricated two point electrodes. The nanowires (diameter varying from 150 nm to 250 nm, and tens of microns in length) are synthesized by the pyrolysis of polyfurfuryl alcohol (PFA) nanowire precursors. The microstructure of the pyrolyzed nanowire shows predominantly amorphous carbon structure with an increasing degree of graphitization reported in literature at higher pyrolysis temperatures. The effect of the nanowire surface temperature on its resistivity is also characterized. We observe temperature dependence in resistivity and decreasing resistance with increasing temperature which is evidence of semiconducting nature of these carbonaceous nanowires.
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He, J., i C. M. Lilley. "Modeling and Characterization of Nanowires With Microcantilever Beams". W ASME 2006 International Mechanical Engineering Congress and Exposition. ASMEDC, 2006. http://dx.doi.org/10.1115/imece2006-13762.

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Mechanical behavior of a nanowire-microcantilever beam structure under electrostatic actuation was studied using the FE method. A comparison for the resonant frequencies between a nanowire-microcantilever structure and a microcantilever only is presented. Several factors affecting the resonant frequency of the nanowire-microcantilever structure, such as actuation voltage and fabrication effects on geometries are discussed. Also, alignment effect of the nanowires with the microcantilever beam is investigated. This study can be utilized to predict Young's modulus of nanowires.
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Patterson, Brendan A., i Henry A. Sodano. "Effect of Zinc Oxide Nanowire Length on Interfacial Strength of Carbon Fiber Composites". W ASME 2013 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/imece2013-66509.

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Vertically aligned arrays of zinc oxide nanowires can serve as an adjustable interface for fiber composites through controllable synthesis techniques. When grown on carbon fiber surfaces as a fiber-matrix interphase of a composite, ZnO nanowires increase the surface area of interaction between fiber and matrix, and thus cause a greater interfacial shear strength of the composite. The ability to control the interfacial strength of this interphase through tailored morphologies enables the design of composite systems to specific applications. This report focuses on the controlled growth of ZnO nanowires and correlates the relationship between nanowire length and interfacial shear strength of the composite. Previous studies have focused on the effects of nanowire morphology on the interfacial strength; however, the data was limited to nanowire lengths < 1μm due to problems with nanowire uniformity and cleanliness [1]. Here, a new synthesis method is applied to the growth of zinc oxide nanowires on carbon fiber that enables the production of long, vertically aligned, uniform nanowires while maintaining the tensile properties of the fiber. The nanowires created by the new method are then compared to previous method nanowires by scanning electron microscopy imaging. Lastly, the interfacial shear strength of the fiber/polymer matrix composite is tested using single fiber fragmentation and correlated to the nanowire length of each method.
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Ryu, Sang-gil, David J. Hwang, Eunpa Kim, Jae-hyuck Yoo i Costas P. Grigoropoulos. "Laser-Assisted on Demand Growth of Semiconducting Nanowires". W ASME 2013 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/imece2013-65696.

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We present laser-assisted direct synthesis of nanowires with site-, composition-, and shape-selectivity on a single substrate by employing a spatially confined laser heat source. Laser-assisted nanowire growth based on vapor-liquid-solid mechanism is conveniently studied with multiple growth parameters such as temperature, time, and illumination direction. On-demand direct integration of silicon and germanium nanowires are demonstrated in a hetero-array configuration by simply switching the reactant gases as the growth of nanowires is limited within the heat-affected zone induced by the laser. Since laser-induced local temperature field is able to drive the individual growth, each germanium nanowire is successfully synthesized with distinctively different geometric features from cylindrical to hexagonal pyramid shape. By regularly patterning gold catalysts prepared by electron beam lithography on Si(111), especially, we accomplished site- and shape-selective direct integration of germanium nanowires on a single substrate in vertical architecture. Considering that blanket furnace heating only produce nanowires with uniform size and shape, therefore, our work shows a route toward the facile fabrication of multifunctional nanowire based devices.
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Redcay, Christopher J., i Ongi Englander. "Germanium Nanowire Synthesis via Localized Heating and a Comparison to Bulk Processes". W ASME 2010 International Mechanical Engineering Congress and Exposition. ASMEDC, 2010. http://dx.doi.org/10.1115/imece2010-37976.

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In this work, we compare the localized synthesis of germanium nanowires (GeNWs) to germanium nanowires synthesized under a globally high temperature environment. The localized synthesis of germanium nanowires is presented for the first time using the resistive heating of MEMS microbridges. The results of the localized synthesis process are then compared with the results of well-established high temperature synthesis processes for germanium nanowires. The effect of heat source and local temperature gradients on the resulting nanowires is assessed. The results suggest that optimal nanowire synthesis conditions in a high temperature furnace environment are no longer optimal in localized heating based synthesis. More specifically, there is a significant reduction in growth rates with the localized process. Differences in nanowire quality are observed as kinking and bending of the nanowires are a common result of the localized process yet rare in germanium nanowires synthesized in a global heating environment. Nanowires grown in a global heating environment exhibit larger average wire diameters, approximately 80 nm larger, compared to those synthesized using the localized heating process. Finally, nanowire tapering which is evident in the global heating process is not prevalent in the localized process.
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Yoon, Hyeun Joong, Jin Ho Yang, Sang Sik Yang i Eui-Hyeok Yang. "Microfabricated Nanowire Diluter for Controlled Assembly of Nanowires". W ASME 2008 International Mechanical Engineering Congress and Exposition. ASMEDC, 2008. http://dx.doi.org/10.1115/imece2008-67865.

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The controlled assembly of nanowires is essential for nanoscale processes. The dielectrophoretic (DEP) assembly process enables a very simple and efficient assembly; however, controlling the number and dimension of nanowires to bridge electrodes is extremely intricate. The micromachined nanowire diluter presented in this paper can automatically dilute and sort nanowires in solution without requiring conventional centrifuge equipment. The device consists of a glass substrate with an array of gold electrode pairs and a PDMS microchannel. Nickel nanowires (30 μm-long) were fabricated by a template-directed electrodeposition process using nanoporous alumina templates. A liquid solution containing nanowires was injected into an inlet of the diluter. Pulsed voltages were applied to 16 pairs of electrodes. The nanowires were subsequently trapped or released in the microchannel at specific pulsed electric fields. As a result, the number of nanowires at the outlet of the channel was dramatically reduced, implying that the device presented here can effectively dilute nanowire suspensions for controlled assembly.
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Nam, W. J., H. Carrion, P. Park, P. Garg, S. Joshi i S. J. Fonash. "Step-and-Grow Approach for Precisely Positioned Nanowire Array Structure Fabrication". W ASME 2007 International Manufacturing Science and Engineering Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/msec2007-31151.

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A novel fabrication approach for forming precisely positioned nanowire array structures is introduced. The approach is suitable for potentially economical and environmentally safe manufacturing. For the demonstration of this approach, 100nm wide Sn nanowires and 150nm wide polyaniline (PANI) nanowires were synthesized using an electro-chemical deposition technique and a process we term the step-and-grow method. The nanowires produced exhibit the expected properties. For example, synthesized PANI nanowires showed reasonable ranges of electrical conductivities (e.g., 25S/cm for a 200nm wide, 200nm high, 10um long nanowire), and formed ohmic contact with electrodes on a substrate. It is shown that the polydimethylsiloxane (PDMS) stepping template mold used for our step-and-grow nanowire synthesis process can be used at least up to 40 times without degradation.
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Chen, Yunfei, Deyu Li, Jennifer R. Lukes i Zhonghua Ni. "Monte Carlo Simulation of Thermal Conductivities of Silicon Nanowires". W ASME 2005 Summer Heat Transfer Conference collocated with the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems. ASMEDC, 2005. http://dx.doi.org/10.1115/ht2005-72377.

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One-dimensional (1D) materials such as various kinds of nanowires and nanotubes have attracted considerable attention due to their potential applications in electronic and energy conversion devices. The thermal transport phenomena in these nanowires and nanotubes could be significantly different from that in bulk material due to boundary scattering, phonon dispersion relation change, and quantum confinement. It is very important to understand the thermal transport phenomena in these materials so that we can apply them in the thermal design of microelectronic, photonic, and energy conversion devices. While intensive experimental efforts are being carried out to investigate the thermal transport in nanowires and nanotube, an accurate numerical prediction can help the understanding of phonon scattering mechanisms, which is of fundamental theoretical significance. A Monte Carlo simulation was developed and applied to investigate phonon transport in single crystalline Si nanowires. The Phonon-phonon Normal (N) and Umklapp (U) scattering processes were modeled with a genetic algorithm to satisfy both the energy and the momentum conservation. The scattering rates of N and U scattering processes were given from the first perturbation theory. Ballistic phonon transport was modeled with the code and the numerical results fit the theoretical prediction very well. The thermal conductivity of bulk Si was then simulated and good agreement was achieved with the experimental data. Si nanowire thermal conductivity was then studied and compared with some recent experimental results. In order to study the confinement effects on phonon transport in nanowires, two different phonon dispersions, one based on bulk Si and the other solved from the elastic wave theory for nanowires, were adopted in the simulation. The discrepancy from the simulations based on different phonon dispersions increases as the nanowire diameter decreases, which suggests that the confinement effect is significant when the nanowire diameter goes down to tens nanometer range. It was found that the U scattering probability engaged in Si nanowires was increased from that in bulk Si due to the decrease of the frequency gap between different modes and the reduced phonon group velocity. Simulation results suggest that the dispersion relation for nanowire solved from the elasticity theory should be used to evaluate nanowire thermal conductivity as the nanowire diameter reduced to tens nanometer.
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Raporty organizacyjne na temat "Nanowires"

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Mohney, S. E. Contacts to Semiconductor Nanowires. Fort Belvoir, VA: Defense Technical Information Center, październik 2009. http://dx.doi.org/10.21236/ada510151.

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Adhikari, Hemant, Shiyu Sun, Piero Pianetta, Chirstopher E. D. Chidsey i Paul C. McIntyre. Surface Passivation of Germanium Nanowires. Office of Scientific and Technical Information (OSTI), maj 2005. http://dx.doi.org/10.2172/890831.

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Goldman, Allen M. Tunneling and Transport in Nanowires. Office of Scientific and Technical Information (OSTI), sierpień 2016. http://dx.doi.org/10.2172/1295659.

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Ghita, Marius. Frequency Multiplication in Silicon Nanowires. Portland State University Library, styczeń 2000. http://dx.doi.org/10.15760/etd.3077.

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Musket, R. G., T. Felter i A. Quong. Synthesis and Characterization of Nanowires. Office of Scientific and Technical Information (OSTI), marzec 2000. http://dx.doi.org/10.2172/820924.

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Xu, Jimmy. Development and Investigation of Bismuth Nanowires. Fort Belvoir, VA: Defense Technical Information Center, czerwiec 2008. http://dx.doi.org/10.21236/ada484626.

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Mishra, Nimai, i Jennifer Ann Hollingsworth. Upscaling Nanowires for Thermoelectric power conversion. Office of Scientific and Technical Information (OSTI), styczeń 2015. http://dx.doi.org/10.2172/1167233.

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Sapp, Shawn A., Brinda B. Lakshmi i Charles R. Martin. Template Synthesis of Bismuth Telluride Nanowires. Fort Belvoir, VA: Defense Technical Information Center, grudzień 1998. http://dx.doi.org/10.21236/ada360131.

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Clement, Teresa J., i Julia W. P. Hsu. Synthesis of silicon and germanium nanowires. Office of Scientific and Technical Information (OSTI), listopad 2007. http://dx.doi.org/10.2172/945179.

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Lagally, M. G. Thermoelectrics Using Massively Scalable Si Nanowires. Fort Belvoir, VA: Defense Technical Information Center, listopad 2010. http://dx.doi.org/10.21236/ada561816.

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