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Gotowa bibliografia na temat „Nanostructured Oxide Semiconductors”

Autor: Grafiati

Data publikacji: 7 września 2023

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Artykuły w czasopismach na temat "Nanostructured Oxide Semiconductors"

Sun, Peng. "Gas Sensors Based on Oxide Semiconductors with Porous Nanostructures". Proceedings 14, nr 1 (19.06.2019): 13. http://dx.doi.org/10.3390/proceedings2019014013.

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Gas sensor as a device composed of sensing material coupled with signal transducer, has been acknowledged as an analytical tool for detection and quantification of inflammable, explosive or toxic gases. The gas sensors based on nanostructured oxide semiconductor endowed with excellent sensing properties have exhibited great potential application in the fields of environmental monitoring, resource exploration, medical welfare, etc. It is well known that the sensing mechanism of sensor employing oxide semiconductors is mainly that the interactions between the surface adsorbed oxygen species and target gases lead to a change in the electrical conductivity. Therefore, the gas sensing properties of oxide semiconductors are closely related with their composition, crystalline size, and microstructure. In this regard, design and preparation of oxides with novel architectures will be increasingly important in the construction of high performance gas sensors. Due to high specific surface area, low density, and good surface permeability, porous nanostructures oxide semiconductor sensing materials have attracted growing interest in recent years. In our work, we successfully prepared various porous nanostructures oxides and their composites to the construction of high performances gas sensors with enhanced sensitivity, selectivity, as well as lowered detection limit. The subsequent gas sensing measurements explicitly revealed that these oxides and composites manifested superior sensing behaviors (like much higher sensitivity and faster response speed), which can be ascribed to the porous architectures and the synergistic effects.

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Díaz, Carlos, Marjorie Segovia i Maria Luisa Valenzuela. "Solid State Nanostructured Metal Oxides as Photocatalysts and Their Application in Pollutant Degradation: A Review". Photochem 2, nr 3 (5.08.2022): 609–27. http://dx.doi.org/10.3390/photochem2030041.

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Most dyes used in various industries are toxic and carcinogenic, thus posing a serious hazard to humans as well as to the marine ecosystem. Therefore, the impact of dyes released into the environment has been studied extensively in the last few years. Heterogeneous photocatalysis has proved to be an efficient tool for degrading both atmospheric and aquatic organic contaminants. It uses the sunlight in the presence of a semiconductor photocatalyst to accelerate the remediation of environmental contaminants and the destruction of highly toxic molecules. To date, photocatalysis has been considered one of the most appealing options for wastewater treatment due to its great potential and high efficiency by using sunlight to remove organic pollutants and harmful bacteria with the aid of a solid photocatalyst. Among the photocatalysts currently used, nanostructured metal oxide semiconductors have been among the most effective. This review paper presents an overview of the recent research improvements on the degradation of dyes by using nanostructured metal oxide semiconductors obtained by a solid-state method. Metal oxides obtained by this method exhibited better photocatalytic efficiency than nanostructured metal oxides obtained using other solution methods in several cases. The present review discusses examples of various nanostructured transition metal oxides—such as TiO2, Fe2O3, NiO, ReO3, IrO2, Rh2O3, Rh/RhO2, and the actinide ThO2—used as photocatalysts on methylene blue. It was found that photocatalytic efficiency depends not only on the bandgap of the metal oxide but also on its morphology. Porous nanostructured metal oxides tend to present higher photocatalytic efficiency than metal oxides with a similar band gap.

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John Chelliah, Cyril R. A., i Rajesh Swaminathan. "Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures". Nanotechnology Reviews 6, nr 6 (27.11.2017): 613–23. http://dx.doi.org/10.1515/ntrev-2017-0155.

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AbstractThe quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In order to continue Moore’s law of scaling, it is necessary to find an effective way to enhance carrier transport in scaled dimensions. In this regard, the use of alternative nanomaterials that have superior transport properties for metal-oxide-semiconductor field-effect transistor (MOSFET) channel would be advantageous. Because of the extraordinary electron transport properties of certain III–V compound semiconductors, III–Vs are considered a promising candidate as a channel material for future channel metal-oxide-semiconductor transistors and complementary metal-oxide-semiconductor devices. In this review, the importance of the III–V semiconductor nanostructured channel in MOSFET is highlighted with a proposed III–V GaN nanostructured channel (thickness of 10 nm); Al2O3 dielectric gate oxide based MOSFET is reported with a very low threshold voltage of 0.1 V and faster switching of the device.

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Galoppini, Elena. "(Invited) Bridge Design for Photoactive Molecules at Interfaces". ECS Meeting Abstracts MA2018-01, nr 31 (13.04.2018): 1849. http://dx.doi.org/10.1149/ma2018-01/31/1849.

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Electron transfer at the interface between a photoactive molecule and large bandgap nanostructured metal oxide semiconductors (ZnO, TiO2 for instance) remains at the center of intense research in numerous areas of solar energy conversion. Such areas encompass photocatalysis and solar fuels, photovoltaics, energy storage, and artificial photosynthesis. An enduring challenge is the ability to achieve control of the chromophore/semiconductor interface at the molecular level. The goal of our collaborative research is to address it by a combination of synthetic design and interfacial charge transfer studies. The presentation will describe the development of “functional” linkers for chromophore-linker model compounds that are able to tune and control the energy level alignment of molecules on nanostructured or single crystal inorganic semiconductors.

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Limongelli, Julia, Felicia Tolea, Mihaela Valeanu, Lucian Diamandescu, Tianhong Xu i Monica Sorescu. "Nanostructured iridium oxide-hematite magnetic ceramic semiconductors". Ceramics International 41, nr 1 (styczeń 2015): 333–43. http://dx.doi.org/10.1016/j.ceramint.2014.08.076.

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Anta, Juan A. "Electron transport in nanostructured metal-oxide semiconductors". Current Opinion in Colloid & Interface Science 17, nr 3 (czerwiec 2012): 124–31. http://dx.doi.org/10.1016/j.cocis.2012.02.003.

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McGehee, Michael D. "Nanostructured Organic–Inorganic Hybrid Solar Cells". MRS Bulletin 34, nr 2 (luty 2009): 95–100. http://dx.doi.org/10.1557/mrs2009.27.

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AbstractWhen light is absorbed in organic semiconductors, bound electron–hole pairs known as excitons are generated. The electrons and holes separate from each other at an interface between two semiconductors by electron transfer. It is advantageous to form well-ordered nanostructures so that all of the excitons can reach the interface between the two semiconductors and all of the charge carriers have a pathway to the appropriate electrode. This article discusses charge and exciton transport in organic semiconductors, as well as the opportunities for making highly efficient solar cells and for using carbon nanotubes to replace metal oxide electrodes.

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Dadkhah, Mehran, i Jean-Marc Tulliani. "Nanostructured Metal Oxide Semiconductors towards Greenhouse Gas Detection". Chemosensors 10, nr 2 (30.01.2022): 57. http://dx.doi.org/10.3390/chemosensors10020057.

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Climate change and global warming are two huge current threats due to continuous anthropogenic emissions of greenhouse gases (GHGs) in the Earth’s atmosphere. Accurate measurements and reliable quantifications of GHG emissions in air are thus of primary importance to the study of climate change and for taking mitigation actions. Therefore, the detection of GHGs should be the first step when trying to reduce their concentration in the environment. Throughout recent decades, nanostructured metal oxide semiconductors have been found to be reliable and accurate for the detection of many different toxic gases in air. Thus, the aim of this article is to present a comprehensive review of the development of various metal oxide semiconductors, as well as to discuss their strong and weak points for GHG detection.

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Rud, Vasily, Doulbay Melebaev, Viktor Krasnoshchekov, Ilya Ilyin, Eugeny Terukov, Maksim Diuldin, Alexey Andreev, Maral Shamuhammedowa i Vadim Davydov. "Photosensitivity of Nanostructured Schottky Barriers Based on GaP for Solar Energy Applications". Energies 16, nr 5 (28.02.2023): 2319. http://dx.doi.org/10.3390/en16052319.

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This work investigates the surface-barrier photoelectric properties of Au-palladium-n-GaP structures. Research into the visible spectrum region, under the action of both linearly polarized and natural radiation, provides us with new information about the height of the barrier, the interface m-s section, and the GaP band structure. SBs based on GaP (p- and n-type) are helpful for researchers in developing advantageous structures for creating various photovoltaic devices—photodetectors for fiber-optic control of energy systems or possible structures for solar energy. Despite many years of research, issues concerning the band structure of semiconductors based on the phenomenon of photoelectroactive absorption in such surface-barrier structures’ m-s remain urgent in the creation of new high-performance devices. Such structures may also be interesting for creating solar energy systems. They create a thin insulating dielectric layer (usually an oxide layer) in solar cells on SBs between the m and the semiconductor substrate. The advantage of solar cells based on m dielectric semiconductor structures is the strong electric field near the surface of the semiconductor that usually has a direction favoring the collection of carriers created by short-wavelength light. Diffusion of impurities usually results in crystal defects in the active region. There are no such defects in the studied elements. This is also the difference between solar cells on m dielectric structures and elements with diffusion in p-n junctions. We studied the PS of Au-Pd-n-GaP nanostructures to determine the height of the potential barrier qφBo and obtained accurate data on the zone structure of the n-GaP. The PS of nanostructured Au-Pd-n-GaP structures was studied in the visible region of the spectrum. Essential information about the semiconductor’s potential barrier parameters and band structure was obtained. The intermediate Pd nanolayer between Au and GaP has specific effects on the Au-Pd-n-GaP nanostructure, which are of considerable practical and scientific significance for future needs.

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Bhaumik, Anagh, Austin M. Shearin, Rishi Patel i Kartik Ghosh. "Significant enhancement of optical absorption through nano-structuring of copper based oxide semiconductors: possible future materials for solar energy applications". Phys. Chem. Chem. Phys. 16, nr 22 (2014): 11054–66. http://dx.doi.org/10.1039/c4cp00827h.

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Rozprawy doktorskie na temat "Nanostructured Oxide Semiconductors"

Berhe, Seare Ahferom. "Acceptor-sensitizers for Nanostructured Oxide Semiconductor in Excitonic Solar Cells". Thesis, University of North Texas, 2014. https://digital.library.unt.edu/ark:/67531/metadc699927/.

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Organic dyes are examined in photoelectrochemical systems wherein they engage in thermal (rather than photoexcited) electron donation into metal oxide semiconductors. These studies are intended to elucidate fundamental parameters of electron transfer in photoelectrochemical cells. Development of novel methods for the structure/property tuning of electroactive dyes and the preparation of nanostructured semiconductors have also been discovered in the course of the presented work. Acceptor sensitized polymer oxide solar cell devices were assembled and the impact of the acceptor dyes were studied. The optoelectronic tuning of boron-chelated azadipyrromethene dyes has been explored by the substitution of carbon substituents in place of fluoride atoms at boron. Stability of singlet exited state and level of reduction potential of these series of aza-BODIPY coumpounds were studied in order to employ them as electron-accepting sensitizers in solid state dye sensitized solar cells.

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Wang, Jinfeng. "Characterization and synthesis of nanoscale materials". Diss., Rolla, Mo. : Missouri University of Science and Technology, 2008. http://scholarsmine.mst.edu/thesis/pdf/JinfengWang_09007dcc80564540.pdf.

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Thesis (Ph. D.)--Missouri University of Science and Technology and University of Missouri--St. Louis, 2008.
Vita. The entire thesis text is included in file. Title from title screen of thesis/dissertation PDF file (viewed August 28, 2008) Thesis completed as part of a cooperative degree program with Missouri University of Science & Technology and the University of Missouri--St. Louis. Includes bibliographical references (p. 129-142).

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Akande, Amos Adeleke. "Gas sensing properties of nanostructured vanadium oxide semiconductors by chemoresistive and optical methods". Thesis, University of Pretoria, 2017. http://hdl.handle.net/2263/65892.

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The aims of this research thesis are to synthesise VO2, V2O5 and V6O13 nanostructures and apply the materials on sensor electrodes for gas and humidity sensing. These materials were synthesised and optimised using chemical vapour deposition (CVD), microwave assisted and pulse laser deposition (PLD) techniques. Analyses with thermogravimetric (TGA), differential scanning calorimetry (DSC), X-ray diffraction (XRD), high resolution transmission electron microscope (HRTEM), energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), vibrating sample magnetometry (VSM), Raman and Fourier transform infrared (FTIR) spectroscopy showed VOx phases order as NH4VO3 ? VO2 + V2O5 (150 – 200 °C) ? V6O13 (300 °C) ? V2O5 (above 350 °C). This is when the precursor NH4VO3 was annealed in CVD between 100 – 350 °C in H2 atmosphere for 2 hrs. Adsorption analysis of VOx nanostructures showed a profile of Brunauer-Emmett-Teller (BET) surface areas which increased with the annealing temperature until 300 °C after which the transition occurred. Humidity (%) sensing response of VOx showed high response for V6O13 and V2O5 phase whereas, the Langmuir isotherm plot in the form of the response per BET surface area with respect to different levels of relative humidity showed high response for VO2. Phase evolution diagram based on these properties has been proposed. Thermal CVD annealing of NH4VO3 at 500 °C in N2 atmosphere for 2, 12 and 24 hours produced monoclinic V6O13 (at 2 hrs) and ?-orthorhombic V2O5 (at 12 and 24 hrs) nanorod structures using the above characterization techniques. Gas sensing application of these structures revealed that the H2S gas is selective in adsorption to V6O13 phase with 132 % response magnitude at 350 °C and 60 ppm, this response is 647.2 % higher than that of NH3, CH4, NO2, H2 and CO. The response and recovery times are 32 and 129 s respectively which is remarkably short compared with the data in literatures. This V6O13 sensor was ranked with its V2O5 counterpart and still found to be 238.5 % higher for H2S gas. Density functional theory (DFT) through ab initio molecular dynamics of (110) facet of monoclinic V6O13 and ?- orthorhombic V2O5 also showed high H2S adsorption energy for V6O13 than V2O5 with a profile which simulate the experimental findings. Low temperature microwave assisted synthesis of VOx from NH4VO3 without post-annealing treatment demonstrated small size homogeneous crystallite with high BET surface area and high adsorption and desorption pores. These properties translated to sub-ppm room temperature sensing of the flammable CH4 and odorant NH3 and toxic NO2 with high sensitivity. The VO2 (B) phase produced via the same microwave process applied for humidity sensing in the lateral gate metal oxide semiconductor field effect transistor (MOSFET) configuration for 0, 5, 8, 10, 12 and 15 V gate voltages. An optimum percentage humidity response observed at 5 V showed response and recovery times in the order of 60 – 70 s which is remarkably shorter than the ? 300 s response of the non-gated VO2 humidity sensor reported in this thesis. Statistical information extracted from the non-linear S-curve Hill Dose rate showed that the VO2 (B) sensor is very resilient to relative humidity by showing the humidity level of more than 100% where the response of the sensor could be reduced to 50%. In-situ Raman spectroscopy sensing of NH3 gas at the surface of PLD deposited V2O5 thin film was presented. The film crystal structure, depth profile and oxidation state was studied by cross section scanning electron microscope (SEM), time of flight secondary ion mass spectroscopy (TOF-SIMS), XPS and group theoretical analysis. Recoverable red shift of 194 cm-1 and blue shift of 996 cm-1phonons upon the interaction with the NH3 gas at 25 and 100 °C was observed. Decrease in the Raman scattered photons of the 145 cm-1 phonon was also observed for different levels of NH3 exposure. The responses of these phonon properties in NH3 environment compared to the chemoresistive sensing of the film at 40 ppm showed that the in-situ Raman spectroscopy techniques is not only more sensitive but also demonstrated possibility for selective gas detection via blue and red shift of phonon frequencies.
Thesis (PhD)--University of Pretoria, 2017.
Physics
PhD
Unrestricted

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Zhang, Shaolin. "Wide band gap nanomaterials and their applications". Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B41758225.

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Zhang, Shaolin, i 張少林. "Wide band gap nanomaterials and their applications". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B41758225.

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Lima, Francisco Anderson de Sousa. "Application of transition-metal-oxide-based nanostructured thin films on third generation solar cells". reponame:Repositório Institucional da UFC, 2015. http://www.repositorio.ufc.br/handle/riufc/14584.

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LIMA, F. A. S. Application of transition-metal-oxide-based nanostructured thin films on third generation solar cells. 2015. 225 f. Tese (Doutorado em Ciência de Materiais) – Centro de Tecnologia, Universidade Federal do Ceará, Fortaleza, 2015.
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One of the greatest challenges of our time is to devise means to provide energy in a sustainable way to attend an exponentially growing demand. The energy demand is expected to grow 56% by 2040. In this context, the use of clean and sustainable sources of energy is imperative. Among these sources, solar energy is the only one which can meet the total world energy requirement even considering such large growth in demand. The solar power incident on the Earth's surface every second is equivalent to 4 trillion 100-watt light bulbs. Photovoltaic solar cells are one of several ways to harness solar energy. These cells convert solar energy directly into electricity. Commercial photovoltaic devices are already a reality, but their share of the world energy matrix is still quite small, mainly due to the high costs. Next generation photovoltaics open a number of new possibilities for photovoltaic energy applications that can potentially decrease the overall cost of energy production. Transition metal semiconductor oxides are promising materials that can be produced by low cost methods and o er interesting new features. The use of these materials in next generation photovoltaics is therefore a very promising and interesting application. In this thesis work zinc, titanium and vanadium oxides were used in next generation solar cells. Thin lms of zinc oxide were synthesized by the low cost and environmentally friendly techniques of electrodeposition and hydrothermal synthesis and applied as working electrodes in highly e cient dye sensitized solar cells (DSSCs). The lms were characterized by structural and optical techniques while the cells were tested by current vs: voltage and quantum e ciency measurements. The e ciencies of these cells were as high as 2.27% using ZnO thin lms without any post deposition treatment. Moreover, natural dyes extracted from plants of northeastern Brazil were applied as sensitizers in DSSCs assembled with commercial available TiO 2 as working electrode. The natural dyes were extracted employing very simple methods and were characterized by XPS and UPS techniques. Their band alignments were shown to be compatible with the TiO 2 as well as with the mediator electrolyte. The e ciency of DSSCs sensitized with natural dyes were as high as 1.33%. Finally, water based V 2 O 5 was used as hole transport medium (HTM) in conventional organic solar cells (OSCs) and ITO-free, plastic OSCs. The results obtained with V 2 O 5 were compared with the results obtained from cells assembled with PEDOT:PSS, which is the most used HTM. This comparison showed that the use of V 2 O 5 as HTM can lead to more e cient OSCs. The stability of these devices were evaluated by tests applying the ISOS standards ISOS-D-1, ISOS-L-1 and ISOS-O-1. A UV- lter and a protective graphene oxide (GO) layer were employed seeking to improve the stability of OSCs. The combination of both UV- lter and GO protective layer was shown to be the most e ective way to improve the stability of these devices
Um dos maiores desa os do nosso tempo e desenvolver formas para fornecer energia de forma sustent avel para atender uma demanda que cresce exponencialmente e que dever a crescer 56% at e 2040. Neste contexto, o uso de fontes limpas e sustent aveis de energia e um imperativo. Entre essas fontes, a energia solar e a unico que pode satisfazer a ne- cessidade total de energia do mundo, mesmo considerando o crescimento na demanda. A pot^encia solar incidente na superf cie da Terra a cada segundo e equivalente a 4 trilh~oes de l^ampadas de 100 watts. C elulas solares fotovoltaicas s~ao uma das v arias maneiras de aproveitar a energia solar, convertendo-a diretamente em eletricidade. Dispositivos com- erciais fotovoltaicos j a s~ao uma realidade, mas a sua participa c~ao na matriz energ etica mundial ainda e muito pequena, principalmente devido aos seus custos elevados. C elulas fotovoltaicas de nova gera c~ao abrem uma s erie de novas possibilidades para aplica c~oes de energia fotovoltaica que pode diminuir o custo total de produ c~ao de energia. Oxidos semicondutores de metais de transi c~ao s~ao materiais promissores que podem ser produzi- dos atrav es de m etodos de baixo custo e que possuem caracter sticas interessantes. Por conseguinte, o uso destes materiais em energia fotovoltaica de pr oxima gera c~ao se apre- senta com uma aplica c~ao promissora. Nesta tese de doutorado oxidos de zinco, tit^anio e van adio foram utilizados em c elulas solares de pr oxima gera c~ao. Filmes nos de oxido de zinco foram sintetizados por eletrodeposi c~ao e s ntese hidrot ermica. Os lmes foram apli- cados como eletrodos de trabalho em c elulas solares sensibilizadas por corante (DSSCS) altamente e cientes. Os lmes foram caracterizados por t ecnicas estruturais e oticas en- quanto que as c elulas foram testadas por medidas de corrente vs: voltagem e de e ci^encia qu^antica. A e ci^encia dessas c elulas atingiu 2,27% utilizando lmes nos de ZnO sem qualquer tratamento p os-deposi c~ao. Al em disso, corantes naturais extra dos de plan- tas do nordeste do Brasil foram aplicados como sensibilizadores em DSSCs montadas com TiO 2 comercial utilizado como eletrodo de trabalho. Os corantes naturais foram extra das empregando m etodos simples e foram caracterizados por espectroscopia de fotoel etrons excitados por raios X e por radia c~ao ultravioleta, XPS e UPS respectivamente. Seus alin- hamentos de banda se mostraram compat veis com o TiO 2 e com o eletrodo de regenera c~ao. A e ci^encia das DSSCs sensibilizadas com corantes naturais chegou a 1,33%. Finalmente, V 2 O 5 a base de agua foi usado como material transportador de buracos (HTM) em c elulas solares org^anicas (OSCs) convencionais e OSCs de pl astico constru das sem ITO. Os re- sultados obtidos com V 2 O 5 foram comparados com os resultados de c elulas constru das com PEDOT:PSS, que e o HTM mais utilizado. Esta compara c~ao revelou que o uso de V 2 O 5 como HTM pode levar a OSCs mais e cientes. A estabilidade destes dispositivos foi avaliada por testes aplicando os padr~oes ISOS-D-1, ISOS-L-1 e ISOS-O-1. O uso de ltros ultravioleta e de uma camada protetora de oxido de grafeno reduzido foi testado com o intuito de melhorar a estabilidade desses dispositivos. O uso de uma combina c~ao de ambos se mostrou a forma mais efetiva de melhorar a estabilidade das OSCs

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Chen, Xinyi, i 陈辛夷. "Wide band-gap nanostructure based devices". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2012. http://hub.hku.hk/bib/B49799290.

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Wide band gap based nanostructures have being attracting much research interest because of their promise for application in optoelectronic devices. Among those wide band gap semiconductors, gallium nitride (GaN) and zinc oxide (ZnO) are the most commonly studied and optoelectronic devices based on GaN and ZnO have been widely investigated. This thesis concentrates on the growth, optical and electrical properties of GaN and ZnO nanostructures, plus their application in solar cells and light emitting diodes (LEDs). GaN-nanowire based dye sensitized solar cells were studied. Different post-growth treatments such as annealing and coating with a TiOx shell were applied to enhance dye absorption. It was found that TiOx increased the dye absorption and the performance of the dye sensitized solar cell. ZnO nanorods were synthesized by vapor deposition and electrodeposition. Post-growth treatments such as annealing and hydrothermal processing were used to modify the defect chemistry and optical properties. LEDs based on GaN/ZnO heterojunctions were studied. The influence of ZnO seed layers on GaN/ZnO LEDs was investigated. GaN/ZnO LEDs based on ZnO nanorods with MgO and TiOx shells were also prepared in order to modify the LED performance. The coating condition of the shell was found to influence the current-voltage (I-V) characteristics and device performance. Moreover, high brightness LEDs based on GaN with InGaN multiple quantum wells were also fabricated. The origin of the emission from GaN/ZnO LEDs was studied using different kinds of GaN substrates. Direct metal contacts on bare GaN substrates were also employed to investigate the optical emission and electrical properties. It is found that the emission from the GaN/ZnO LEDs probably originated from the GaN substrate. GaN/ZnO LEDs with MgO as an interlayer were also fabricated. The MgO layer was expected to modify the band alignment between the GaN and the ZnO. It was shown that GaN/MgO/ZnO heterojunctions (using both ZnO nanorods and ZnO films) have quite different emission performance under forward bias compared to those that have no MgO interlayer. An emission peak was around 400 nm could originate from ZnO. Nitrogen doped ZnO nanorods on n-type GaN have been prepared by electrodeposition. Zinc nitrate and zinc acetate were used as ZnO precursors and NH4NO3 was used as a nitrogen precursor. Only the ZnO nanorods made using zinc nitrate showed obvious evidence of doping and coherent I-V characteristics. Cerium doped ZnO based LEDs were fabricated and showed an emission that depended on the cerium precursor that was employed. This indicates that the choice of precursor influences the growth, the materials properties and the optical properties of ZnO.
published_or_final_version
Physics
Doctoral
Doctor of Philosophy

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Hansson, (f d. Wadeasa) Amal. "Heterojunctions between zinc oxide nanostructures and organic semiconductor". Doctoral thesis, Linköpings universitet, Fysik och elektroteknik, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-71843.

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Lighting is a big business, lighting consumes considerable amount of the electricity. These facts motivate for the search of new illumination technologies that are efficient. Semiconductor light emitting diodes (LEDs) have huge potential to replace the traditional primary incandescent lighting sources. They are two basic types of semiconductor LEDs being explored: inorganic and organic semiconductor light emitting diodes. While electroluminescence from p-n junctions was discovered more than a century ago, it is only from the 1960s that their development has accelerated as indicated by an exponential increase of their efficiency and light output, with a doubling occurring about every 36 months, in a similar way to Moore's law in electronics. These advances are generally attributed to the parallel development of semiconductor technologies, optics and material science. Organic light emitting diodes (OLEDs) have rapidly matured during the last 30 years driven by the possibility to create large area light-emitting diodes and displays. Another driving force to specifically use semiconducting polymers is the possibility to build the OLED on conventional flexible substrates via low-cost manufacturing techniques such as printing techniques, which open the way for large area productions. This thesis deals with the demonstration and investigation of heterojunction LEDs based on p-organic semiconductor and n-ZnO nanostructures. The ZnOorganic heterojunctions are fabricated using low cost and simple solution process without the need for sophisticated vacuum equipments. Both ZnO-nanostructures and the organic materials were grown on variety of substrates (i.e. silicon, glass and plastic substrates) using low temperature methods. The growth mechanism of the ZnO nanostructures has been systematically investigated with major focus in ZnO nanorods/nanowires. Different organic semiconductor materials and device configurations are explored starting with single polymer emissive layer ending up with separate emissive and blocking layers, or even blends. Interestingly, the photoluminescence and electroluminescence spectra of the hybrid LEDs provided a broad emission band covering entirely the visible spectrum [∼400-∼800nm]. The hybrid light emitting diode has a white emission attributed to ZnO intrinsic defects and impurities in combination with the electroluminescence from the conjugated polymers. The ZnO nanostructures in contact with a high workfunction electrode constitute an air stable electron injecting contact for the organic semiconductor. Hence, we have shown that a white light emission can be achieved in a ZnO-organic hybrid light emitting diode using cheap and low temperature growth techniques for both organic and inorganic materials.
The series number "1504" is incorrect and is changed in the electronic version to the correct number "1405".

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González, Zalba Miguel Fernando. "Single donor detection in silicon nanostructures". Thesis, University of Cambridge, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608181.

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Khunou, Ramotseng. "Gas sensing properties of Ceo2 nanostructures". University of the Western Cape, 2020. http://hdl.handle.net/11394/7909.

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>Magister Scientiae - MSc
The industrial safety requirements and environmental pollution have created a high demand to develop gas sensors to monitor combustible and toxic gases. As per specifications of World Health Organization (WHO) and Occupational Safety and Health Administration (OSHA), lengthy exposure to these gases lead to death which can be avoided with early detection. Semiconductor metal oxide (SMO) has been utilized as sensor for several decades. In recent years, there have been extensive investigations of nanoscale semiconductor gas sensor.

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Książki na temat "Nanostructured Oxide Semiconductors"

Teherani, Ferechteh Hosseini. Oxide-based materials and devices: 24-27 January 2010, San Francisco, California, United States. Bellingham, WA: SPIE, 2010.

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J, Rogers David, Ferechteh Hosseini Teherani i D. C. Look. Oxide-based materials and devices III: 22-25 January 2012, San Francisco, California, United States. Redaktor SPIE (Society). Bellingham, Wash: SPIE, 2012.

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C, Jagadish, i Pearton S. J, red. Zinc oxide bulk, thin films and nanostructures: Processing, properties and applications. Amsterdam: Elsevier, 2006.

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Tsu-Jae, King, Materials Research Society Meeting i Symposium on CMOS Front-End Materials and Process Technology (2003 : San Francisco, Calif.), red. CMOS front-end materials and process technology: Symposium held April 22-24, 2003, San Francisco, California, U.S.A. Warrendale, Pa: Materials Research Society, 2003.

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I, Gardner Mark, i Materials Research Society, red. Novel materials and processes for advanced CMOS: Symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A. Warrendale, Pa: Materials Research Society, 2003.

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Sudipta, Seal, Materials Research Society Meeting i Symposium on Semiconductor Materials for Sensing (2004 : Boston, Mass.), red. Semiconductor materials for sensing: Symposium held November 29-December 2, 2004, Boston, Massachusetts, U.S.A. Warrendale, Pa: Materials Research Society, 2005.

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CMOS nanoelectronics: Analog and RF VLSI circuits. New York: McGraw-Hill, 2011.

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Nano-semiconductors: Devices and technology. Boca Raton, FL: CRC Press, 2012.

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Nano-CMOS gate dielectric engineering. Boca Raton: CRC Press, 2012.

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International, Symposium on Advanced Materials (11th 2009 Islamabad Pakistan), i International Symposium on Technology Evolution for Silicon Nano-Electronics (2010 Tokyo Institute of Technology). Advanced materials XI: Selected, peer reviewed papers from the 11th International Symposium on Advanced Materials, 08-12 August, 2009, Islamabad, Pakistan. Stafa-Zurich, Switzerland: Trans Tech Publications, 2010.

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Części książek na temat "Nanostructured Oxide Semiconductors"

Valeev, Rishat G., Alexander V. Vakhrushev, Aleksey Yu Fedotov i Dmitrii I. Petukhov. "Porous Anodic Aluminum Oxide: Structure, Properties, and Application in Semiconductor Technology". W Nanostructured Semiconductors in Porous Alumina Matrices, 19–36. Includes bibliographical references and index.: Apple Academic Press, 2019. http://dx.doi.org/10.1201/9780429398148-2.

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Valeev, Rishat G., Alexander V. Vakhrushev, Aleksey Yu Fedotov i Dmitrii I. Petukhov. "Results of Modeling the Deposition Processes of Nanofilms onto Aluminum Oxide Templates". W Nanostructured Semiconductors in Porous Alumina Matrices, 205–45. Includes bibliographical references and index.: Apple Academic Press, 2019. http://dx.doi.org/10.1201/9780429398148-10.

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Valeev, Rishat G., Alexander V. Vakhrushev, Aleksey Yu Fedotov i Dmitrii I. Petukhov. "Theoretical Models for Investigating The Processes of Nanofilm Deposition onto Porous Templates of Aluminum Oxide". W Nanostructured Semiconductors in Porous Alumina Matrices, 85–140. Includes bibliographical references and index.: Apple Academic Press, 2019. http://dx.doi.org/10.1201/9780429398148-6.

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Janotti, A., J. B. Varley, J. L. Lyons i C. G. Van de Walle. "Controlling the Conductivity in Oxide Semiconductors". W Functional Metal Oxide Nanostructures, 23–35. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9931-3_2.

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Lee, S. H. "ZnO and GaN Nanostructures and their Applications". W Oxide and Nitride Semiconductors, 459–505. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88847-5_10.

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Veal, T. D., P. D. C. King i C. F. McConville. "Electronic Properties of Post-transition Metal Oxide Semiconductor Surfaces". W Functional Metal Oxide Nanostructures, 127–45. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9931-3_6.

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Gupta, Nidhi, Omita Nanda, Pramod Kumar, V. K. Jain i Kanchan Saxena. "Synthesis of Zinc Oxide Nanostructures by Chemical Routes". W Physics of Semiconductor Devices, 641–43. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_163.

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Sauer, Rolf, i Klaus Thonke. "Donor-Related Exciton Luminescence in Wide-Bandgap Semiconductors: Diamond, Zinc Oxide, and Gallium Nitride". W Optics of Semiconductors and Their Nanostructures, 73–106. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09115-9_4.

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Andreu, Teresa, Jordi Arbiol, Andreu Cabot, Albert Cirera, Joan Daniel Prades, Francisco Hernandez-Ramírez, Albert Romano-Rodríguez i Joan R. Morante. "Nanosensors: Controlling Transduction Mechanisms at the Nanoscale Using Metal Oxides and Semiconductors". W Sensors Based on Nanostructured Materials, 1–51. Boston, MA: Springer US, 2008. http://dx.doi.org/10.1007/978-0-387-77753-5_5.

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Magdaluyo, Eduardo R., Ian Harvey J. Arellano, Alvin Karlo G. Tapia, Roland V. Samargo i Leon M. Payawan. "Photoluminescence and Fractal Properties of Diverse Carbothermal Zinc Oxide Nanostructures". W Semiconductor Photonics: Nano-Structured Materials and Devices, 92–94. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.92.

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Streszczenia konferencji na temat "Nanostructured Oxide Semiconductors"

Ivanov, Denis, Ilya Marinov, Yuriy Gorbachev, Alexander Smirnov i Valeria Krzhizhanovskaya. "Computer Simulation of Laser Annealing of a Nanostructured Surface". W ASME 2009 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2009. http://dx.doi.org/10.1115/detc2009-87087.

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Laser annealing technology is used in mass production of new-generation semiconductor materials and nano-electronic devices like the MOS-based (metal–oxide–semiconductor) integrated circuits. Manufacturing sub-100 nm MOS devices demands application of ultra-shallow doping (junctions), which requires rapid high-temperature annealing to increase dopant electrical activation and remove implantation defects in the silicon [1].

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Gwo, Shangjr. "Metal-oxide-semiconductor plasmonic nanorod lasers (Conference Presentation)". W Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV, redaktorzy Diana L. Huffaker i Holger Eisele. SPIE, 2017. http://dx.doi.org/10.1117/12.2257098.

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Yu, Jae Su, i Yeong Hwan Ko. "Metal-oxide semiconductor nanostructures for energy and sensing applications". W SPIE OPTO, redaktorzy Ferechteh H. Teherani, David C. Look i David J. Rogers. SPIE, 2014. http://dx.doi.org/10.1117/12.2041847.

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Chung, Peng-Fei, Ting-Wien Su, Ching-Fuh Lin, Miin-Jang Chen i Wei-Fang Su. "Nanostructured metal-oxide semiconductor devices for efficient band-edge electroluminescence". W Symposium on Integrated Optoelectronic Devices, redaktorzy David J. Robbins i Ghassan E. Jabbour. SPIE, 2002. http://dx.doi.org/10.1117/12.463847.

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Shishiyanu, T., S. Shishiyanu, O. Lupan, V. Sontea i A. Bragorenco. "Novel Zinc Oxide Nanostructured thin Films for Volatile Organic Compaunds Gas Sensors". W 2006 International Semiconductor Conference. IEEE, 2006. http://dx.doi.org/10.1109/smicnd.2006.283968.

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Liu, Lei, Derek Waldron, Vladimir Timochevski i Hong Guo. "Automistic modeling of direct tunnelling in metal-oxide-semiconductor nanostructures". W 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306200.

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PIQUERAS, J., A. CREMADES, P. FERNÁNDEZ, J. GRYM, D. MAESTRE, B. MÉNDEZ i E. NOGALES. "GROWTH AND LUMINESCENCE OF ELONGATED MICRO- AND NANOSTRUCTURES OF OXIDE SEMICONDUCTORS". W Reviews and Short Notes to Nanomeeting-2005. WORLD SCIENTIFIC, 2005. http://dx.doi.org/10.1142/9789812701947_0106.

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Lupan, Oleg, Vasilii Cretu, Victor Sontea, Serghei Railean, Lidia Ghimpu, Ion Tiginyanu, Yauheni Rudzevich, Yuqing Lin i Lee Chow. "Copper doped zinc oxide micro- and nanostructures for room-temperature sensorial applications". W 2013 International Semiconductor Conference (CAS 2013). IEEE, 2013. http://dx.doi.org/10.1109/smicnd.2013.6688082.

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Laha, Apurba, E. Bugiel, R. Ranjith, H. J. Osten, Andreas Fissel, V. V. Afanas'ev i M. Badylevich. "Semiconductor nanostructures in crystalline rare earth oxide for nanoelectronic device applications". W 2010 International Conference on Microelectronics (ICM). IEEE, 2010. http://dx.doi.org/10.1109/icm.2010.5696129.

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Baraneedharan, P., i J. Manikandan. "Metal Oxide Semiconductor Nanostructures Surface Properties for Gas Sensing – A Review". W 2022 Sixth International Conference on I-SMAC (IoT in Social, Mobile, Analytics and Cloud) (I-SMAC). IEEE, 2022. http://dx.doi.org/10.1109/i-smac55078.2022.9986495.

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