Gotowa bibliografia na temat „Nanoelectronics”
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Artykuły w czasopismach na temat "Nanoelectronics"
HULL, ROBERT, RICHARD MARTEL i J. M. XU. "NANOELECTRONICS: SOME CURRENT ASPECTS AND PROSPECTS". International Journal of High Speed Electronics and Systems 12, nr 02 (czerwiec 2002): 353–64. http://dx.doi.org/10.1142/s0129156402001174.
Pełny tekst źródłaHe, Qianxi. "Characteristics and Improvement Methods of Carbon Nanodevices". Highlights in Science, Engineering and Technology 106 (16.07.2024): 94–100. http://dx.doi.org/10.54097/8s3ra054.
Pełny tekst źródłaBate, R. T. "Nanoelectronics". Nanotechnology 1, nr 1 (1.07.1990): 1–7. http://dx.doi.org/10.1088/0957-4484/1/1/001.
Pełny tekst źródłaHartnagel, H. L., R. Richter i A. Grüb. "Nanoelectronics". Electronics & Communications Engineering Journal 3, nr 3 (1991): 119. http://dx.doi.org/10.1049/ecej:19910020.
Pełny tekst źródłaCress, Cory. "Carbon Nanoelectronics". Electronics 3, nr 1 (27.01.2014): 22–25. http://dx.doi.org/10.3390/electronics3010022.
Pełny tekst źródłaBandyopadhyay, S., i V. P. Roychowdhury. "Granular nanoelectronics". IEEE Potentials 15, nr 2 (1996): 8–11. http://dx.doi.org/10.1109/45.489730.
Pełny tekst źródłaWolfgang, Porod, i I. Csurgay Arpad. "Editorial: Nanoelectronics". IEE Proceedings - Circuits, Devices and Systems 151, nr 5 (2004): 413. http://dx.doi.org/10.1049/ip-cds:20041170.
Pełny tekst źródłaVuill, Dominique. "Molecular Nanoelectronics". Proceedings of the IEEE 98, nr 12 (grudzień 2010): 2111–23. http://dx.doi.org/10.1109/jproc.2010.2063410.
Pełny tekst źródłaNyberg, Tobias, Fengling Zhang i Olle Inganäs. "Macromolecular nanoelectronics". Current Applied Physics 2, nr 1 (luty 2002): 27–31. http://dx.doi.org/10.1016/s1567-1739(01)00104-3.
Pełny tekst źródłaGorbatsevich, A. A., i V. V. Kapaev. "Waveguide nanoelectronics". Russian Microelectronics 36, nr 1 (luty 2007): 1–13. http://dx.doi.org/10.1134/s1063739707010015.
Pełny tekst źródłaRozprawy doktorskie na temat "Nanoelectronics"
McCaughan, Adam Nykoruk. "Superconducting thin film nanoelectronics". Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/101576.
Pełny tekst źródłaCataloged from PDF version of thesis.
Includes bibliographical references (pages 163-171).
Superconducting devices have found application in a diverse set of fields due to their unique properties which cannot be reproduced in normal materials. Although many of these devices rely on the properties of bulk superconductors, superconducting devices based on thin films are finding increasing application, especially in the realms of sensing and amplification. With recent advances in electron-beam lithography, superconducting thin films can be patterned into geometries with feature sizes at or below the characteristic length scales of the superconducting state. By patterning 2D geometries with features smaller than these characteristic length scales, we were able to use nanoscale phenomena which occur in thin superconducting films to create superconducting devices which performed useful tasks such as sensor amplification, logical processing, and fluxoid state sensing. In this thesis, I describe the development, characterization, and application of three novel superconducting nanoelectronic devices: the nTron, the yTron, and the current-controlled nanoSQUID. These devices derive their functionality from the exploitation of nanoscale superconducting effects such as kinetic inductance, electrothermal suppression, and current-crowding. Patterning these devices from superconducting thin-films has allowed them to be integrated monolithically with each other and other thin-film superconducting devices such as the superconducting nanowire single-photon detector.
by Adam Nykoruk McCaughan.
Ph. D.
Echtermeyer, Tim Joachim. "Graphene nanoelectronics and optoelectronics". Thesis, University of Cambridge, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648171.
Pełny tekst źródłaKulmala, Tero Samuli. "Nanowires and graphene nanoelectronics". Thesis, University of Cambridge, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608195.
Pełny tekst źródłaFasoli, Andrea. "Nanowires and nanoribbons nanoelectronics". Thesis, University of Cambridge, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608660.
Pełny tekst źródłaLombardo, Antonio. "Graphene nanoelectronics and optoelectronics". Thesis, University of Cambridge, 2014. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648601.
Pełny tekst źródłaConrad, Brad Richard. "Interface effects on nanoelectronics". College Park, Md.: University of Maryland, 2009. http://hdl.handle.net/1903/9154.
Pełny tekst źródłaThesis research directed by: Dept. of Physics. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
Spagocci, S. "Fault tolerance issues in nanoelectronics". Thesis, University College London (University of London), 2008. http://discovery.ucl.ac.uk/14227/.
Pełny tekst źródłaSemple, James. "High-throughput large-area plastic nanoelectronics". Thesis, Imperial College London, 2016. http://hdl.handle.net/10044/1/39573.
Pełny tekst źródłaHutchinson, G. D. "Superconducting nanoelectronics using controllable Josephson junctions". Thesis, University of Cambridge, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.604859.
Pełny tekst źródłaTan, Yong-Tsong. "Nanoelectronics using polycrystalline and nanocrystalline silicon". Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621321.
Pełny tekst źródłaKsiążki na temat "Nanoelectronics"
Van de Voorde, Marcel, Robert Puers, Livio Baldi i Sebastiaan E. van Nooten, red. Nanoelectronics. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527800728.
Pełny tekst źródłaW, Pease R. Fabian, red. Nanoelectronics. New York: Institute of Electrical and Electronics Engineers, 1991.
Znajdź pełny tekst źródłaMurali, Raghu, red. Graphene Nanoelectronics. Boston, MA: Springer US, 2012. http://dx.doi.org/10.1007/978-1-4614-0548-1.
Pełny tekst źródłaHussain, Muhammad Mustafa. Advanced Nanoelectronics. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2018. http://dx.doi.org/10.1002/9783527811861.
Pełny tekst źródłaKhanna, Vinod Kumar. Integrated Nanoelectronics. New Delhi: Springer India, 2016. http://dx.doi.org/10.1007/978-81-322-3625-2.
Pełny tekst źródłaRaza, Hassan, red. Graphene Nanoelectronics. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-22984-8.
Pełny tekst źródłaDragoman, Mircea, i Daniela Dragoman. 2D Nanoelectronics. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48437-2.
Pełny tekst źródłaFerry, David K., John R. Barker i Carlo Jacoboni, red. Granular Nanoelectronics. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-3689-9.
Pełny tekst źródłaRaza, Hassan. Nanoelectronics Fundamentals. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-32573-2.
Pełny tekst źródłaK, Ferry David, Barker John R, Jacoboni Carlo i North Atlantic Treaty Organization. Scientific Affairs Division., red. Granular nanoelectronics. New York: Plenum Press, 1991.
Znajdź pełny tekst źródłaCzęści książek na temat "Nanoelectronics"
Raza, Hassan. "Nanoelectronics". W Undergraduate Lecture Notes in Physics, 53–61. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-11733-7_6.
Pełny tekst źródłaKulkarni, Sulabha K. "Nanoelectronics". W Nanotechnology: Principles and Practices, 259–72. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-09171-6_10.
Pełny tekst źródłaBeaumont, S. P. "Nanoelectronics". W Gallium Arsenide Technology in Europe, 364–86. Berlin, Heidelberg: Springer Berlin Heidelberg, 1994. http://dx.doi.org/10.1007/978-3-642-78934-2_24.
Pełny tekst źródłaDwivedi, S. "Nanoelectronics". W Nanotechnology, 93–117. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003220350-6.
Pełny tekst źródłaGargini, Paolo A. "A Brief History of the Semiconductor Industry". W Nanoelectronics, 1–52. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527800728.ch1.
Pełny tekst źródłaGambacorti, Narciso. "Nanoanalysis". W Nanoelectronics, 245–64. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527800728.ch10.
Pełny tekst źródłaMariani, Marcello, i Nicolas Possémé. "Front-End Processes". W Nanoelectronics, 265–88. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527800728.ch11.
Pełny tekst źródłaRonse, Kurt. "Lithography for Nanoelectronics". W Nanoelectronics, 289–316. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527800728.ch12.
Pełny tekst źródłaOates, Anthony S., i K. P. Cheung. "Reliability of Nanoelectronic Devices". W Nanoelectronics, 317–30. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527800728.ch13.
Pełny tekst źródłaMacii, Enrico, Andrea Calimera, Alberto Macii i Massimo Poncino. "Logic Synthesis of CMOS Circuits and Beyond". W Nanoelectronics, 331–62. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527800728.ch14.
Pełny tekst źródłaStreszczenia konferencji na temat "Nanoelectronics"
Prevenslik, Thomas. "Heat Transfer in Nanoelectronics by Quantum Mechanics". W ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/ipack2013-73173.
Pełny tekst źródłaSkorek, Adam W., Anna Gryko-Nikitin i Joanicjusz Nazarko. "Genetic Algorithm for Nanoscale Electro-Thermal Optimization". W ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ipack2007-33827.
Pełny tekst źródła"Nanoelectronics". W 2021 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (ElConRus). IEEE, 2021. http://dx.doi.org/10.1109/elconrus51938.2021.9396180.
Pełny tekst źródła"Nanoelectronics". W 2017 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus). IEEE, 2017. http://dx.doi.org/10.1109/eiconrus.2017.7910823.
Pełny tekst źródła"Nanoelectronics". W 2018 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus). IEEE, 2018. http://dx.doi.org/10.1109/eiconrus.2018.8317496.
Pełny tekst źródła"Nanoelectronics". W 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus). IEEE, 2019. http://dx.doi.org/10.1109/eiconrus.2019.8656774.
Pełny tekst źródła"Nanoelectronics". W 2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus). IEEE, 2020. http://dx.doi.org/10.1109/eiconrus49466.2020.9039244.
Pełny tekst źródła"Nanoelectronics III". W 2006 64th Device Research Conference. IEEE, 2006. http://dx.doi.org/10.1109/drc.2006.305180.
Pełny tekst źródła"Nanoelectronics I". W 2006 64th Device Research Conference. IEEE, 2006. http://dx.doi.org/10.1109/drc.2006.305168.
Pełny tekst źródłaChun-Yung Sung. "Graphene nanoelectronics". W 2009 International Semiconductor Device Research Symposium (ISDRS 2009). IEEE, 2009. http://dx.doi.org/10.1109/isdrs.2009.5378331.
Pełny tekst źródłaRaporty organizacyjne na temat "Nanoelectronics"
Liu, Jie, i Mark W. Grinstaff. DNA for the Assembly of Nanoelectronic Devices Biotechnology and Nanoelectronics. Fort Belvoir, VA: Defense Technical Information Center, kwiecień 2005. http://dx.doi.org/10.21236/ada433496.
Pełny tekst źródłaLawrence R. Sita. Ferrocene-Based Nanoelectronics. Office of Scientific and Technical Information (OSTI), luty 2006. http://dx.doi.org/10.2172/876179.
Pełny tekst źródłaPan, Wei, Taisuke Ohta, Laura Butler Biedermann, Carlos Gutierrez, C. M. Nolen, Stephen Wayne Howell, Thomas Edwin Beechem Iii, Kevin F. McCarty i Anthony Joseph, III Ross. Enabling graphene nanoelectronics. Office of Scientific and Technical Information (OSTI), wrzesień 2011. http://dx.doi.org/10.2172/1029775.
Pełny tekst źródłaKiv, A., V. Soloviev i Yu Shunin. Economic problems of nanoelectronics. Брама-Україна, maj 2014. http://dx.doi.org/10.31812/0564/1281.
Pełny tekst źródłaKnight, Stephen, Joaquin V. Martinez de Pinillos i Michele Buckley. Semiconductor microelectronics and nanoelectronics programs. Gaithersburg, MD: National Institute of Standards and Technology, 2003. http://dx.doi.org/10.6028/nist.ir.7010.
Pełny tekst źródłaKnight, Stephen, Joaquin V. Martinez de Pinillos i Michele Buckley. Semiconductor microelectronics and nanoelectronics programs. Gaithersburg, MD: National Institute of Standards and Technology, 2004. http://dx.doi.org/10.6028/nist.ir.7121.
Pełny tekst źródłaKnight, Stephen, Joaquin V. Martinez de Pinillos i Michele Buckley. Semiconductor microelectronics and nanoelectronics programs. Gaithersburg, MD: National Institute of Standards and Technology, 2006. http://dx.doi.org/10.6028/nist.ir.7321.
Pełny tekst źródłaKnight, Stephen, Joaquin V. Martinez de Pinillos i Michele Buckley. Semiconductor microelectronics and nanoelectronics programs. Gaithersburg, MD: National Institute of Standards and Technology, 2007. http://dx.doi.org/10.6028/nist.ir.7426.
Pełny tekst źródłaKnight, Stephen, Joaquin V. Martinez de Pinillos, Yaw S. Obeng i Michele Buckley. Semiconductor microelectronics and nanoelectronics programs. Gaithersburg, MD: National Institute of Standards and Technology, 2008. http://dx.doi.org/10.6028/nist.ir.7513.
Pełny tekst źródłaMartinez de Pinillos, Joaquin V., Yaw S. Obeng i Michele Buckley. Semiconductor Microelectronics and Nanoelectronics Programs. Gaithersburg, MD: National Institute of Standards and Technology, 2009. http://dx.doi.org/10.6028/nist.ir.7604.
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