Rozprawy doktorskie na temat „Nano imprint lithographie”
Kliknij ten link, aby zobaczyć inne rodzaje publikacji na ten temat: Nano imprint lithographie.
Utwórz poprawne odniesienie w stylach APA, MLA, Chicago, Harvard i wielu innych
Sprawdź 23 najlepszych rozpraw doktorskich naukowych na temat „Nano imprint lithographie”.
Przycisk „Dodaj do bibliografii” jest dostępny obok każdej pracy w bibliografii. Użyj go – a my automatycznie utworzymy odniesienie bibliograficzne do wybranej pracy w stylu cytowania, którego potrzebujesz: APA, MLA, Harvard, Chicago, Vancouver itp.
Możesz również pobrać pełny tekst publikacji naukowej w formacie „.pdf” i przeczytać adnotację do pracy online, jeśli odpowiednie parametry są dostępne w metadanych.
Przeglądaj rozprawy doktorskie z różnych dziedzin i twórz odpowiednie bibliografie.
1
MALAQUIN, Laurent. "Dispositifs ultra-sensibles pour le nano-adressage electrique. Application a la detection de biomolecules". Phd thesis, Université Paul Sabatier - Toulouse III, 2004. http://tel.archives-ouvertes.fr/tel-00009243.
Pełny tekst źródłaStreszczenie:
" Because technology provides the tools and biology the problems, the two should enjoy a happy marriage ! "1 . Cette phrase resume parfaitement l'esprit du projet qui a motive ces travaux de these. En effet, le couplage des biotechnologies et des micro et nano technologies, resume sous le vocable < Nanobiotechnologies > est une activite en plein essor qui laisse presager de nombreuses applications en particulier dans le domaine de la biodetection. Lobjectif principal de ces travaux est dedie au developpement de strategies d'adressage de biomolecules a l'echelle nanometrique pour des applications de biodetection. Le premier aspect de ce travail est d'ordre technologique. Il concerne la fabrication de dispositifs d'adressage bases sur des reseaux de nanoelectrodes planaires. En utilisant un procede reposant sur lutilisation de la lithographie electronique haute resolution sur un microscope TEM/STEM, nous avons pu demontrer la fabrication de dispositifs a base de nanoelectrodes presentant des espaces inter-electrodes controlables entre 100 et 15nm. Une technique de lithographie alternative, la Nano-Impression est egalement presentee comme une solution possible a la replication de nanodispositifs fabriques par lithographie electronique. La deuxieme partie des travaux est dediee a la mise en place dun schema de detection de nanoparticules que nous avons developpe autour de dispositifs bases sur des reseaux delectrodes inter-digitees. Avant de nous interesser a l'utilisation de ces dispositifs pour une application biologique, nous avons etudie leur reponse electrique vis-a-vis de l'absorption de nanoparticules d'Or par interaction electrostatique. Les premiers resultats obtenus montrent que le schema de detection permet d'atteindre un niveau de sensibilite ultime au travers d'une mesure directe de la conductance des dispositifs. Certaines experiences montrent en effet la possibilite de mesurer electriquement l'adsorption d'une seule nanoparticule. Enfin, la derniere partie de ces travaux est dediee a l'adaptation de ce protocole pour la detection de biomolecules fonctionnalisees par des nanoparticules d'Or. Pour cela, nous avons employe une approche simple basee sur un systeme de reconnaissance entre une molecule cible et une molecule sonde. Ce schema a ete applique a la detection d'interaction antigene/anticorps et nous a permis de transcrire la selectivite de la reconnaissance entre les anticorps dans le depot des nanoparticules qui se traduit par une modification importante de la conductance du dispositif. Les possibilites d'integration ainsi que la compatibilite des dispositifs avec des systemes de microfluidique rendent ce schema de detection particulierement adapte pour le developpement d'un systeme integre de biodetection a tres haute sensibilite. 1 S. Fields, Proc. Natl. Acad. Sci. USA, vol 98, pp 10051-10054 (2001)
2
Rajarathinam, Venmathy. "Imprint lithography and characterization of photosensitive polymers for advanced microelectronics packaging". Diss., Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/34722.
Pełny tekst źródłaStreszczenie:
To enable fast and reliable processors, advances must be made in the interconnections on the printed circuit board and in the interconnections from the chip to the printed circuit board. Processing techniques have been demonstrated to fabricate a copper-clad encapsulated air dielectric layer to enable low loss off-chip electrical signal lines using sacrificial polymers and the three dimensional patterning capabilities of imprint lithography. The inclusion of an air gap can eliminate the dielectric loss allowing the signal to propagate over longer lengths. Additionally, the low dielectric constant of air lowers the loss contributions from the conductor and increases the signal propagation velocity reducing delay. The metal shielding could minimize the crosstalk noise and radiation losses that are significant at high frequencies. The three dimensional patterning capabilities of imprint lithography fabricated curved structures and rounded terminations which can reduce reflections at discontinuities. Furthermore, imprint lithography also created planarized surfaces which simplified the buildup process. Since imprint lithography, only uses temperature and pressure to make a pattern it is an inexpensive and simple process advancement. The metal-clad encapsulated air dielectric structures were fabricated in a comparable number of registration steps to traditional transmission lines.
Implementation of all copper chip to substrate interconnects would provide high conductivity electrical connections, resistance to electromigration while avoiding formation of brittle intermetallics. High aspect ratio polymer molds for copper electroplating interconnects could enable improved integrated circuit electrical performance. The properties of a new aqueous base develop, negative-tone photosensitive polynorbornene polymer have been characterized to develop mechanically compliant all copper connections between the chip and printed circuit board. High aspect ratio features of 7:1 (height:width) were produced in 70 ìm thick films in a single coat with straight side-wall profiles and high fidelity. The polymer films studied had a contrast of 11.6 and a low absorption coefficient. To evaluate the polymer's suitability to microelectronics applications, epoxy cross-linking reactions were studied as a function of processing condition through Fourier transform infrared spectroscopy, nano-indentation, and dielectric measurements. The fully cross-linked films had an elastic modulus of 2.9 GPa and hardness of 0.18 GPa which can improve the mechanical compliance of the copper interconnections.
A photo-imprint lithography process was developed to improve the photo-patterning of the polynorbornene polymer for high aspect ratio hollow structures. A shallow photo-imprint stamp was developed to physically displace material in the polymer core. Since the imprint stamp displaces material in the area of the feature, the effective film thickness is reduced compared to the bulk film. The reduction in film height reduced the effects of scattering in the core and also facilitated transport of developer within the core. The photo-imprint lithography process resulted in high aspect ratio hollow core pillars that exceeded optical resolution capabilities for comparable feature sizes.
3
Kim, Jung Wuk [Verfasser]. "Application oriented nano-patterning methods based on the liquid transfer imprint lithography / Jung Wuk Kim". München : Verlag Dr. Hut, 2015. http://d-nb.info/1070123978/34.
Pełny tekst źródła
4
Krishnaswamy, Arvind. "Substrate Engineering to Control the Synthesis of Carbon Nanotubes". University of Cincinnati / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1413471369.
Pełny tekst źródła
5
Hsu, Shu-han, i 許淑涵. "Development of plastic molds and imprinted materials for micro/nano imprint lithography". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/39720775600011730199.
Pełny tekst źródłaStreszczenie:
碩士國立高雄大學
化學工程及材料工程學系碩士班
97
The study focusing on the development of nano/micro imprinting techniques and their applications included three major parts: fabrication of imprinted molds, development of alternative imprinting process, and design of imprintable materials. Two imprinting molds were fabricated: one was plastic hybrid mold and the other was ordered porous mold. In the building of plastic hybrid mold, a design using the protruded area with a thin layer of metal to mask the UV light to prepare a residual layer-free pattern. Three materials were tested as the masking layers: carbon black, electroless plated silver, and deposited gold. As limited in the size of carbon black, the plastic hybrid mold with more than 20 um lines was successfully fabricated. Another silver deposition on the protruded area was achieved by immobilizing a layer of tin salt as a reduction coating. However, the tin layer did not homogeneously and selectively bind to the protruded area of plastic molds, giving a failure deposition on the molds. The direct metal transfer techniques was conducted by using different adhesion work for those contact interfaces to stick and remove the protruded gold layer (negative type) or leave the protruded gold layer (negative type). The metal layer transfer was achieved for a 170 nm featured pattern in a 1.5 cm × 1.5 cm area, while the gold particle transfer technique was able to transfer few hundreds nanometer featured pattern in area of 4 cm diameter. Sintering process at a low temperature (150℃) was performed to stable the layered gold nanoparticles on the protruded area. However, heterogeneous distribution of particles was found after 2 hr of sintering. On the other hand, an ordered, self-assembly of composite film was prepared as a nanoporous mold. We synthesized poly(St-BA-AA) emulsion to blend with silica sol prior to coat and dry the composite, giving a large-areaed polymer film with ordered nanopore arrays with 340 nm of pore diameter, 400 nm of spacing, and 2.2 nm of depth. As for the development of imprinting process, we designed a novel water-based imprint process and its application to imprint an organic/inorganic composite. The process is available for imprinting variety of polymers which can be dispersed or emulsified in water, without using organic solvent, high temperature, heavy pressure. A recipe was tested as a water-based Epoxy prepolymer blended with base-catalyzed tetraethoxysilane precursor, giving a transparent 800nm featured pattern. Another test was conducted to fabricate a nonresidual layered pattern, owing to low viscosity of water-based imprintable recipe. In the design of imprintable materials, a novel UV-curable resist was explored for its two staged irradiation and curing. Using the UV resist, the hierarchical structure was able to build up and its depth was increased to ~523.6 nm without collapse the first micron featured pattern.
6
Yi, Wu Chun, i 吳俊億. "Development of Nano Electroplate Imprint Lithography". Thesis, 2006. http://ndltd.ncl.edu.tw/handle/56711018985957536420.
Pełny tekst źródła
7
V, Anil Kumar T., i Anil Kumar T. V. "Nano Imprint Lithography and GaN GAA Nanowire". Thesis, 2014. http://ndltd.ncl.edu.tw/handle/xqm526.
Pełny tekst źródłaStreszczenie:
碩士亞洲大學
資訊工程學系
102
Nanoimprint Lithography: Si master molds are generally patterned by electron-beam lithography (EBL) that is known to be a time consuming nano patterning technique. Thus, developing mold duplication process based on high throughput technique such as nanoimprint lithography can be helpful in reducing its fabrication time and cost. This study aims to develop capabilities in patterning nano structure using thermal nano-imprint lithography. The NEB22 A2, mr- I7000E series negative e-beam resist possess a variety of characteristics desirable for NIL, such as low viscosity, low bulk-volumetric shrinkage, high Young's modulus, high thermal stability, and excellent dry-etch resistance. The excellent oxygen-etch resistance of the barrier material enables a final transfer pattern that is about three times higher than that of the original NIL mold. Based on these imprint on negative photo resist approach is used for pattern transfer into silicon substrates. The result is a high-resolution pattern with feature sizes in the range of nanometer to several microns. We combine Simprint Core simulation software for simulating nanoimprint process and to achieve uniform RLT. Our research results in low RLT as 10-20nm thicknesses for mr-I 7020E photoresist. The simulation results and experimental results are matching. A plot of how RLT across the whole stamp region changes with imprinting duration is shown using simulation. The central, thick line shows the average RLT across the entire stamp; the thin lines indicate the stamp-average RLT plus and minus one standard deviation of the cross-stamp RLT values. Simulated and calibrated for uniform residual layer thickness (RLT) and the cross-sections of RLT are plotted. In cavity filling value of 0 denotes completely empty cavities; a value of 1 in a particular location means that cavities are completely filled in that region. We have achieved completely filled cavities, i.e., value of 1 at all locations. We have achieved RLT around 10nm and even RLT at all location in pattern using mr-I 7020E photoresist imprint. GaN GAA Nanowire: To increase typically low output drive currents from Si Nanowire field-effect transistors (FETs), we show a GaN based GAA Nanowire FET’s effectiveness. The theoretical study is focused on the three dimensional device designs, comparisons, random dopant fluctuation using IFM, and general variability issues including nanowire length, gate work function, and channel thickness are discussed. Performance of GaN GAA Nanowire is found to be increasing as Gate length is increased. Electrical characteristics of FETs including threshold voltage saturation, On/Off current ratio and sub threshold slope (SS) are analysed. GaN GAA structure let to gate control ability improvement compared to Si based Nanowire in electrical performance. The GaN GAA Nanowire subthreshold slope is ~62mV/decade, which is close to the theoretical limit 60 mV/decade and leads to very high Ion/Ioff ratio of 1010-1011. The GaN GAA Nanowire is a very promising candidate for high-performance.
8
Yin, Bailey Anderson. "Dual field nano precision overlay". Thesis, 2010. http://hdl.handle.net/2152/ETD-UT-2010-08-1952.
Pełny tekst źródłaStreszczenie:
Currently, the imprint lithography steppers are designed to only pattern one field of 26 x 33 mm at a time. This choice is based on the desire to mix-and-match to the standard optical lithography tools whose field size is also 26 x 33 mm. Throughput can be increased if more than one field can be imprinted simultaneously. The problem with adding a field to the imprinting template is that each field has overlay errors associated with it that are created when the template is manufactured and when the corresponding prior field is manufactured on the wafer. The current process is able to correct these template and wafer overlay errors using a precision stage and actuators that elastically deform the template. The same method cannot be used when there are two fields because the fields are not independent and interact with each other. Correcting the errors in one of the fields tend to increase the error in the second field.
vii
In this thesis, a new control method has been created to account for the dependent motion. A new template concept was also created to try to limit the interaction between the two fields. The new control algorithm was tested in simulation to see if it could correct the current 1-field setup as well as the new concept of having more than one field on a template. The control algorithm was also used to test applications where the overlay errors in only one direction need to be corrected.
The control algorithm was tested on a solid single field template, the baseline case, and was able to achieve 1.3 nm overlay, which is consistent with the current method. The algorithm was then tested on the dual field concepts. The range of alignment errors needed to get 5 nm overlay are too tight for current manufacturing but the compliant concept did have more relaxed ranges than the solid dual field template. With more research, the compliant template concept might be changed to allow for wider ranges. The tests with correction in only one direction had promising data that should be investigated further.text
9
Huang, Tai-wei, i 黃泰瑋. "Two-Dimensional Photonic Crystal Devices Fabricatedby Nano-Imprint Lithography". Thesis, 2007. http://ndltd.ncl.edu.tw/handle/01484942222603627441.
Pełny tekst źródłaStreszczenie:
碩士國立中央大學
電機工程研究所
95
In this study, photonic crystal wavelength division multiplexer (WDM) and polarization filter based on SOI substrate have been demonstrated. The WDM is used to separate the electromagnetic wave at the wavelength of 1.55μm and 1.31μm. The polarization filter can be applied to leach the optical signal of TM polarization in the range of wavelength 1.3μm ~2.1μm. We use the plane wave expansion method (PWE) to simulate the band-gap distribution of the periodical arrayed structure and used finite-differential time-domain (FDTD) method to study the steady state electromagnetic wave propagation simulation. The WDM was fabricated by e-beam lithography and polarization filter was processed by a novel technology “nano-imprint lithography” which has several extremely ascendant advantages: simple process, low production cost and high throughput efficiency. Waveguide measurement system was used in this experiment. The measurement result shows that the performance of the WDM and the polarization filter are both good. So it means that the design of the devices structure and devices process are successful in this study. And it is expectable that more and more nano-scale devices can be fabricated by E-beam lithography and NIL process by consulting the process parameters in this study.
10
Wei-Hsuan, Hsu. "Increasing uniformity in nano-imprint lithography by designing mold structure". 2006. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0016-1303200709321164.
Pełny tekst źródła
11
Hsu, Wei-Hsuan, i 徐偉軒. "Increasing uniformity in nano-imprint lithography by designing mold structure". Thesis, 2006. http://ndltd.ncl.edu.tw/handle/35879106146857204940.
Pełny tekst źródłaStreszczenie:
碩士國立清華大學
動力機械工程學系
94
Nano-imprint technique has the advantage of high throughput, sub-10nm resolution and low cost. In the printing process, however, the mold deformation often occurs and causes a great concern of the quality of pattern transfer, such as the uniformity. This paper presents a uniform printing method across the wafer by introducing the local mold deformation along the block boundaries. This method is simple and effective with the grooves cut on the backside within the non-patterned area of mold. The grooves lead the mold to lie and to close fit easily on substrate and obtains more uniform pattern on large surface. Both analytical and experimental investigations were conducted to verify the proposed approach. The analytical results reveal that increasing the imprinting force or mold area will cause the substrate distortion and affect the imprinted quality significantly. The grooves can improve the defects and increase the uniform stress distribution in the patterned area. Using the proposed technique to fabricate 50nm grates with the aspect ratio as high as 4 on 4” silicon wafers are successful. The results demonstrate a new imprint method of introducing the controlled local mold deformation for more uniform imprint across large area. This technique enhances the nano-imprint performance in practice.
12
Lin, Jui-Chen, i 林睿真. "Acidic and Silated Resists materials for Micro/Nano imprint Lithography". Thesis, 2006. http://ndltd.ncl.edu.tw/handle/47742342839253170188.
Pełny tekst źródłaStreszczenie:
碩士國立成功大學
材料科學及工程學系碩博士班
94
Two different series of resists for hot embossing nanoimprinting were developed. One is the acidic resists which were prepared by the free r a d i c a l p o l y m e r i z a t i o n o f m e t h y l m e t h a c r y l a t e ( M M A ) ,normal-butylacrylate(n-BA), and methacrylic acid(MAA) in PGMEA. The other series of the resists containing silane moiety, acylic monomer (3-methacryloyloxypropyl)tris (trimethylsiloxy) silane, to promote the oxygen plasma resistance. In the part of the acidic resists, the glass transition temperatures and the thermal stabilities were examined by DSC and TGA, and the results demonstrated that the novel resists would be suitable for the application of hot-embossing nanoimprint lithography. Moreover, the addition of MAA made it possible for the resists to dissolve in base solution, TMAH, and it would be helpful to reduce the time in the resist stripping step. Finally, the resist were applied in the imprinting to fabricate PLED( polymer light emitting diode) device on a flexible substrate. The second series of resists also passed the thermal stability tests, and their Tgs were around 50℃. The results of the etching rate tests proved the improvement of etching resistance by adding the silane monomer. At last, the resist was used in the nanoimprint lithography, and it can completely transfer the nano-scale patterns of the silicon mold to the substrate. From the observation of SEM, the shrinkage of the pattern was less than 3%, so they demonstrated that this series ofresists has potential to be used in nanoimprint lithography.
13
Caldorera-Moore, Mary. "Development and optimization of shape-specific, stimuli-responsive drug delivery nanocarriers using Step and Flash Imprint Lithography". Thesis, 2010. http://hdl.handle.net/2152/ETD-UT-2010-05-833.
Pełny tekst źródłaStreszczenie:
The advent of highly sophisticated drugs designed to interfere with specific cellular functions has created the demand for “intelligent” carriers that can efficiently deliver therapeutic agents in response to a pathophysiogical condition. Nanoscale intelligent systems can maximize the efficacy of therapeutic treatments in numerous ways because they have the ability to rapidly detect and response to disease states directly at the site and sparing physiologically healthy cells and tissues, thereby improving a patient’s quality of life. Nanoparticle fabrication has primarily relied on emulsions, self-assembly and micelles based methods which inherently generate polydisperse spherical particles with little control over particle geometry. Despite significant progress in such drug delivery systems, critical limitations remain in synthesizing nanocarriers with highly controllable architecture (size, shape or aspect ratio) that can, at the same time, impart response-sensitive release mechanisms. These parameters are essential for controlling the in-vivo transport, bio-distribution, and drug release mechanisms.
The objective of my dissertation is to employ the nanofabrication technique Step and Flash Imprint Lithography (S-FIL) to synthesize stimuli-responsive nanocarriers of precise architectures and composition. Applying S-FIL technology, fabrication of nanocarriers of a variety of shapes and sizes (down to 36nm length scale) that are also environmentally responsive by incorporating enzymatically-degradable peptides into the nanocarrier hydrogel matrix, to provide triggered release of encapsulated therapeutic agents in response to specific pathophysiological conditions, has been accomplished.
Besides disease-responsive release, the two key properties of an effective nanocarrier are (a) efficient targeting to specific tissues and cells and (b) avoiding rapid clearance and remaining in circulation in the blood stream for a significant amount of time to increase particle uptake in target tissues. These two properties are expected to be dependent on the shape and size of the carriers. Using various shape and size S-FIL fabricated nanoparticles, the effects of particle geometry on intracellular uptake has also been evaluated. In this dissertation, I will present the extensive work that has been done in the fabrication and optimization of the S-FIL nanocarriers, evaluation of the nanocarrier’s in vitro properties, and evaluation of the effects of nanocarrier geometry on intracellular uptake.text
14
Kuo, Chung-hua, i 郭仲華. "The mold fabrication and development of micro/nano imprint lithography technology". Thesis, 2007. http://ndltd.ncl.edu.tw/handle/90109312235197186091.
Pełny tekst źródłaStreszczenie:
碩士國立成功大學
化學工程學系碩博士班
95
Generally, the most reported material in imprinting mold is silicon or polymer, such as PDMS and polyimide. For nanoimprinting process, owing to the high loading force and high temperature, above the high glass temperature of polymer resist, mold material must possesses high compressibility, hardness ,and extensibility. Furthermore, the mold requires high thermal conductivity to be able to transfer heat uniformly and low expansion coefficient to reduce thermal deformation. For the cause of diamond-like carbon and diamond film intrinsically have these properties mentioned above, we could utilize them as suitable material for imprinting process. In our experiment, DLC film was deposited with additional HMDSO which provides surface with methyl group to show hydrophobic characteristics. The method of nanodiamond film growth with hot-filament chemical vapor deposition (HFCVD) could result in smoother surface and smaller grain size than usual one. The patterns with micro/nano features fabricated onto DLC and nanodiamond film via traditional nanoimprinting lithography is so-called DLC mold and diamond mold, respectively. We could emboss DLC mold and diamond mold in polymer resist and transfer negative pattern onto Si or flexible substrate completely. As SEM images and surface profile indicated, DLC and diamond mold are suitable to be a mold due to their innate anti-adhesive surface, thus, they need not any additional treatment with anti-stick layer. On the other hand, because DLC film and diamond film could maintain theirs anti-adhesive quality even over 300℃, it is obviously that this methodology is quite better than self-assembly process with OTS chemical-bonding treatment. Thus, DLC and diamond mold are expected to apply in imprinting or molding process over 250℃. In other relevant subject, we adopt reversal imprinting process to transfer the pattern of conductive polymer (PEDOT/PSS) without the residual layer. The very key to this process is the treatment of the mold. The Si-mold shows two characteristics, hydrophobic in protruding surface and hydrophilic in concave surface. After spin-coating process, the concavity could selectively fill up with PEDOT/PSS solution. Finally, the pattern of PEDOT/PSS is completely transferred to glue-surface and flexible polymer substrate by conformal contact without any residual layer. From the I-V measurement, the electric characteristic of transferred pattern through reversal imprinting process is the same as PEDOT/PSS thin film with spin-coated process. The formation of conductive polymer pattern is easy and simple to define source and drain electrodes in the next step and result into organic thin-film transistor (OTFT) devices. For the benefits above, it is quite helpful to fabricate organic thin- film transistor device.
15
Tse-JenWang i 汪澤仁. "Study of liquid crystal alignment based on periodic nano-wedgy structures via nano-imprint lithography". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/40263816512483897213.
Pełny tekst źródłaStreszczenie:
碩士國立成功大學
光電科學與工程學系
100
In this study, we used the nanoimprint lithography (NIL) to fabricate the periodic nano-wedges groove for vertical alignment. The incline slope from nano-wedges can control LC raising-up direction on applied voltage. The periodic triangle structure was made on silicon wafer by Electron beam lithography, then we chose perfluoropolyether(PFPE) as a mold to replicate the periodic triangle structure on silicon master. A photoresist material of SU-8 used as an imprint material was coated on the ITO glass, and Poly(dimethylsiloxane) (PDMS) used as an vertical alignment layer by an external hydrophobic property. For the contrast, we also fabricated the periodic nano-rectangular groove with 1μm pitch to assemble VA LC cell by some processes. It demonstrated that the LC cell of periodic nano-wedges structure has better optical symmetry than the periodic nano-rectangular groove and prevent reverse-twist domains.
16
Wei-TingChen i 陳威廷. "Fabrication of multilayer photonic structures using nano-imprint lithography with Moiré fringe technique". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/czd3xd.
Pełny tekst źródłaStreszczenie:
碩士國立成功大學
光電科學與工程學系
101
Nano-Imprint lithography (NIL) is not only a potential technology among the next generation lithographies but also a low-cost and rapid technological. In this paper, the main reseach used ultraviolet Nano-Imprint lithography(UV-NIL) to produce 1-D and 2-D metal structures. Then we used Moiré fringe technique to align and produced a multi-layer metal structure. First, we constructed pressure-assisted Nano-Imprint system, followed by selection of high etch selectivity of the bilayer material for NIL process. And then we studied how to create the correct duty ratio distortion one and two dimensional metallic structures quickly by using Bi-layer resist’s different etching rate. Finally, we could fabricate metal structure after lift-off process. In order to fabricate 3-D photonic crystal structure, we coated liquid silicon dioxide on the metal structure as interface layer and using UV-NIL to produce metal structures on the interface layer that were aligned by Moiré fringe technology. We measured the spectrum of 3-D metallic photonic crystals and simulated the optical characteristic by rigorous coupled-wave analysis method (RCWA). Finally, we have successfully demonstrated the improved alignment and UV-NIL systems to fabricate 300 nm to 1m pitch of metal structure(1-D to 3-D) by NIL.
17
Huang, Jhih-Kai, i 黃治凱. "Enhanced Efficiency of InGaN/GaN Light Emitting Diodes by Using Nano-imprint Lithography". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/86287290748771789079.
Pełny tekst źródłaStreszczenie:
博士國立交通大學
光電工程研究所
104
Due to the advantages of GaN material and light emitting diodes (LEDs) devices, GaN based LEDs have been widely studied and developed for various of applications including backlight of monitor, traffic lighting, LEDs display and the very interesting one of them, white solid state lighting. However, LEDs devices poor efficiency became a barrier to those applications delivering. In order to complete high performance GaN based LEDs for supporting the developments, it is necessary to further improve the epitaxy quality and light extraction efficiency (LEE) of GaN based LEDs through several kinds of methods. In the thesis, considering to process simplification and stability, a rapid high qualitied nano-imprint lithography (NIL) is utilized to fabricate uniform regular nano-patterns for improvement of GaN thin film epitaxial growth and LEE. In General, devices structure of GaN based LEDs includes chip formation, epitaxial thin film and template. In this study, the NIL was employed to map nano-patterns on the three sections respectively for the purpose of devices optimizing. For LEE, we fabricated a regular nano-rods array on p-GaN surface and n-side region during the proceeding of chip formation. The nano-rods array was respectively with lower depth on p-GaN surface and higher depth in n-side region over most chip area. The nano-rods array could be a roughness structure as an extendable interface of GaN/Air to increase possibility of light extracting. Moreover, we utilized nano-imprint lithography and photolithography in a meantime to fabricate hybrid nano-rods in the chip mesa region. The hybrid nano-rods which designed inside micro-holes allowed the roughness depth over the thickness of p-GaN layer in the mesa region without damages to electric characteristic. High depth hybrid nano-rods could act as light guiding pillars to extract most light trapped in the devices. By the excellent enhancement of LEE, LEDs devices were further improved. Besides LEE improving, to enhance internal quantum efficiency (IQE) was also an important factor for devices efficiency. We embedded a SiO2 nano-pattern in n-GaN layer through a regrowth process. It was demonstrated a better IQE of LEDs with an embedded SiO2 nano-pattern. In addition, we designed double nano-patterns including an embedded SiO2 nano-pattern in n-GaN layer and a nano-patterned sapphire substrate (NPSS) in LED devices to achieve a higher performance. Experiments demonstrated the best electroluminescent characteristic of LEDs by using double nano-patterns than LEDs with single nano-pattern. The use of double nano-patterns could significantly reduce the treading dislocations density of GaN based LEDs. Considering the enhanced efficiency of NPSS method was much lower than the common patterned sapphire substrate (PSS) in micro-level as well known for LEDs，we modified NIL process to fabricate a high aspect ratio nano-cone patterned sapphire substrate (HAR-NPSS) as a growth template for pursuit of good epitaxial quality. In results, it was believed that we successfully demonstrated HAR-NPSS as a promising template to growth GaN based LEDs.
18
Kim, Eui Kyoon Willson C. G. "Development and study of nano-imprint and electron beam lithography materials for semiconductor devices". 2005. http://repositories.lib.utexas.edu/bitstream/handle/2152/1952/kime85095.pdf.
Pełny tekst źródła
19
Kim, Eui Kyoon. "Development and study of nano-imprint and electron beam lithography materials for semiconductor devices". Thesis, 2005. http://hdl.handle.net/2152/1952.
Pełny tekst źródła
20
Hsu, Wei-Hsuan, i 徐偉軒. "Using Surface Plasmon Resonance to Measure Filling Defects and Residual Layer Thickness in Nano-imprint Lithography". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/03773315672975658715.
Pełny tekst źródłaStreszczenie:
博士國立清華大學
動力機械工程學系
100
When the dimension of the microelectronic structure decreases, high manufacturing cost is inevitable. A low-cost manufacturing technique for nanostructures is desired. Nano-imprint lithography (NIL) has the potential to meet the expectations. Nano-imprint lithography patterns the resist with physical deformation using a mold at nano-scale. However, the variation of environmental conditions and process parameters seriously affect the reproduction quality. To ensure the quality of the imprinted pattern is essential for industry. In this study, the author applies the surface plasmon resonance (SPR) to develop a functional imprinting mold, which has non-destructive measurement capability for the quality of the imprinted pattern. During measuring process, the excited surface plasmon can penetrate into the interface between mold surface and imprinted material. If there is filling defects in the interface, the SPR behavior will be affected, including the reflectivity spectrum change and resonance angle shift. If the penetration of surface plasmon can reach the substrate, the thickness of residual layer also affects the SPR behavior. Based on the reflectivity spectrum curve and resonance angle, the quality of the imprinted pattern can be told. According to the simulation and experimental results, the developed system can detect the filling defects as low as 1.7 % of the volume of the mold cavity and 8 nm residual layer thickness. This new application of SPR promises to improve NIL performance in the nanofabrication industry.
21
Marshall, Kervin Scott. "Enabling scalability of Bio J-FIL process using intermediate adhesive layers in fabricating PEGDA based nanocarriers". 2012. http://hdl.handle.net/2152/21893.
Pełny tekst źródłaStreszczenie:
The Bio J-FIL process has been demonstrated to be a viable method for manufacturing nanoscale, polymeric drug carriers. The process allows for precise control of the size and shape of the drug carriers. While the original process is sufficient for research scale projects, reliability issues have prevented it from being scalable to levels that could potentially be used for mass-production of the drug carriers.
In this thesis, a detailed root cause analysis has been conducted to determine the cause of the reliability issues limiting the Bio JFIL process. A series of experiments with varying substrate and imprint fluid combinations were conducted to pinpoint the cause of imprint failure in the Bio J-FIL process. Upon determining the cause of failure, an alternative imprint process was investigated that sought to increase the variety of materials used in the process by utilizing an intermediary layer. This process is referred to in this thesis as the Bio JFIL-I process. The results using Bio JFIL-I indicated increased reliability over the standard Bio J-FIL process. Further refinement of the Bio JFIL-I process could also address additional issues with the Bio J-FIL process unrelated to process reliability. The Bio JFIL-I approach presented in this thesis is complementary to other approaches that have been recently pursued in the literature which are discussed in the thesis.text
22
Yang, Chih-Hsiang, i 楊智翔. "The Design of a Compact Laser Interference Lithography System for the Fabrication of Large Area Nano-Imprint Mold". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/28721079246732003666.
Pełny tekst źródłaStreszczenie:
碩士國立清華大學
動力機械工程學系
96
In order to improve the utilization ratio of light source in LCD display, we propose to replace the traditional absorption polarizer with the reflection nano-polarizer, and combine with nanoimprint lithography technology to achieve the goal of mass production of nano-polarizer. Accordingly, the nanoimprint mold plays a critical role in nanoimprint process. There are many different methods to fabricate the nanoimprint mold, for example, optical lithography, E-beam lithography and so on. Amount these techniques, laser interference lithography provides an inexpensive, rapid and easy way to fabricate nano-patterns. To fabricate high density and large-area nano-patterns, some ameliorated interference lithography systems have been proposed. However, these interference lithography systems are either complicated or expensive. The objective of this study is aimed at designing a compact and cost-effective interference lithography system and by step-and-tiling method to fabricate large-area nanoimprint mold. Interference lithography is based on the interference of two or more coherent laser beams incident from different directions intersect on a photoresist-coated substrate. The resulting fringes recorded in the photoresist can be used to fabricate 1-D or 2-D period structures. In this study, we first consider the standing wave effect in interference lithography. By establishing a Hardmask design model and combine with the use of ARC, we can reduce the standing wave effect more effectively. The experimental set-up used in this work is Lloyds-mirror . To combine with the two-axis nano-stage and maintain the stability and precision of nano-stage, we designed a horizental-type Lloyd’s-mirror set-up and verified the viability. Besides, to better understand the factors that contribute to the fabrication of nanoimprint mold, we also consider the experiment process recipe, the mask material suit for this set-up, and the optimum condition for tiling. Similarly, a two-dimensional pattern can be generated by superposition of two sinusoidal standing waves with this sep-up. In the consideration of cost-effective condition, the compact interference lithography system not only provides a rapid way to fabricate large-area nanoimprint mold but has the advantage of flexibility in fabricating different dimensional period structures.
23
WeiChang i 張緯. "Periodically wedge structures fabricated by nano-imprint high aspect ratio soft stamp and E-beam lithography and its application to liquid crystal alignments". Thesis, 2014. http://ndltd.ncl.edu.tw/handle/64195202010929345758.
Pełny tekst źródłaStreszczenie:
碩士國立成功大學
光電科學與工程學系
102
In this study, we use nano-imprint lithography(NIL) to produce high aspect ratio soft stamp, and make it buckle while imprinting to generate periodic wedge groove structures. After that, we let the structures coated by two different vertical alignment layer, monoglycidyl ether-terminated PDMS and polyimide. And observe their vertical alignments to liquid crystals (LCs) with negative dielectric anisotropy. We find out that the liquid crystal cells with wedge structures can obviously reduce the disclination lines compared to rectangular structures. In addition, we produce wedge structures with different pitches and heights by electron beam lithography(E-beam Lithography). The results show that when the pitch gets smaller or height gets larger. The anchoring force of groove direction will become larger after we apply the voltage, so the LCs will prefer to align in the groove direction. And the results are consistent with the Berreman’s theory.