Gotowe bibliografie tematyczne / Nano-Crystalline Silicon

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  1. Artykuły w czasopismach
  2. Rozprawy doktorskie
  3. Części książek
  4. Streszczenia konferencji

Gotowa bibliografia na temat „Nano-Crystalline Silicon”

Autor: Grafiati
Data publikacji: 7 września 2023

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Artykuły w czasopismach na temat "Nano-Crystalline Silicon"

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Liu, Xiangna, i Yuliang He. "Photoabsorption Spectra of Nano-Crystalline Silicon Films". Chinese Physics Letters 10, nr 12 (grudzień 1993): 752–55. http://dx.doi.org/10.1088/0256-307x/10/12/014.

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Niu, Junjie, Jian Sha, Xiangyang Ma, Jin Xu i Deren Yang. "Array-orderly single crystalline silicon nano-wires". Chemical Physics Letters 367, nr 5-6 (styczeń 2003): 528–32. http://dx.doi.org/10.1016/s0009-2614(02)01731-1.

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Arendse, Christopher J., Theophillus F. G. Muller, Franscious R. Cummings i Clive J. Oliphant. "Oxidation Reduction in Nanocrystalline Silicon Grown by Hydrogen-Profiling Technique". Journal of Nano Research 41 (maj 2016): 9–17. http://dx.doi.org/10.4028/www.scientific.net/jnanor.41.9.

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The deposition of a compact amorphous silicon/nano-crystalline silicon material is demonstrated by hot-wire chemical vapour deposition using a sequential hydrogen profiling technique at low hydrogen dilutions. Nano-crystallite nucleation occurs at the substrate interface that develops into a uniform, porous crystalline structure as the growth progresses. A further reduction in the H-dilution results in the onset of a dense amorphous silicon layer. The average crystalline volume fraction and nano-crystallite size in the sample bulk amounts to 30% and 6 nm, respectively, as probed by Raman spectroscopy using the 647 nm excitation. The change in hydrogen dilution is accompanied by a graded hydrogen concentration depth-profile, where the hydrogen concentration decreases as the growth progresses. The level of post-deposition oxidation is considerably reduced, as inferred from infrared spectroscopy. The presence of oxygen is mainly confined to the substrate interface as a result of thermal oxidation during thin film growth.
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Yang, Xiao Jing, i Wei Xing Zhang. "The Research of Nano-Mechanical Properties of Mono-Crystalline Silicon". Advanced Materials Research 834-836 (październik 2013): 18–22. http://dx.doi.org/10.4028/www.scientific.net/amr.834-836.18.

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The research of the nano-mechanical properties on mono-crystalline silicon by nanoindention technology is reported in this paper . Using the calculation method given by Oliver and Pharr, the hardness and the elastic modulus of mono-crystalline silicon are gained from the load-penetration depth curve. The simulation on mono-crystalline silicon in the plastic phase is carried out by ABAQUS. Based on the bilinear constitutive law and approximate relationship between the hardness and the yield strength, the obtained load-penetration depth curve through the finite element method is compared with the materials actual load-penetration depth curve and good correlation is achieved.
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Sharma, Mansi, Deepika Chaudhary, S. Sudhakar, Preetam Singh, K. M. K. Srivatsa i Sushil Kumar. "Spectroscopic identification of ultranano-crystalline phases within amorphous/nano-crystalline silicon". Advanced Materials Letters 8, nr 2 (28.12.2016): 163–69. http://dx.doi.org/10.5185/amlett.2017.6451.

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LIU MING, HE YU-LIANG, JIANG XING-LIU, LI GUO-HUA i HAN HE-XIANG. "PHOTOLUMINESCENCE STUDY ON HYDROGENATED NANO-CRYSTALLINE SILICON FILM". Acta Physica Sinica 47, nr 5 (1998): 864. http://dx.doi.org/10.7498/aps.47.864.

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Wen-guo, Tang, Gong Tao, Li Zi-yuan, Liu Xiang-na i He Yu-liang. "Photoluminescence properties of nano-size crystalline silicon films". Acta Physica Sinica (Overseas Edition) 2, nr 10 (październik 1993): 776–81. http://dx.doi.org/10.1088/1004-423x/2/10/008.

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Zhaoyuan, Y. "Laser synthesis of nano-crystalline silicon carbide powder". Metal Powder Report 57, nr 4 (kwiecień 2002): 38. http://dx.doi.org/10.1016/s0026-0657(02)80109-6.

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Pan, B. C., i R. Biswas. "Simulation of hydrogen evolution from nano-crystalline silicon". Journal of Non-Crystalline Solids 333, nr 1 (styczeń 2004): 44–47. http://dx.doi.org/10.1016/j.jnoncrysol.2003.09.058.

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Dimitrov, Dimitre Z., i Chen-Hsun Du. "Crystalline silicon solar cells with micro/nano texture". Applied Surface Science 266 (luty 2013): 1–4. http://dx.doi.org/10.1016/j.apsusc.2012.10.081.

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Rozprawy doktorskie na temat "Nano-Crystalline Silicon"

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Narchi, Paul. "Investigation of crystalline silicon solar cells at the nano-scale using scanning probe microscopy techniques". Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLX085/document.

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Cette thèse s’intéresse à l’analyse de cellules silicium cristallin à l’échelle nanométrique, à l’aide de techniques de microscopie à sonde locale (SPM). En particulier, nous avons choisi d’analyser les propriétés électriques à l’échelle locale, grâce à deux techniques SPM : la microcopie à sonde de Kelvin (KPFM) et la microscopie à force atomique à sonde conductrice (CP-AFM).Tout d’abord, nous présentons les forces et faiblesses de ces deux techniques, comparées à la microscopie électronique, qui permet également d’analyser les propriétés électrique à l’échelle nanométrique. Cette comparaison approfondie nous permet d’identifier des mesures où le KPFM et le CP-AFM sont particulièrement adéquat et peuvent apporter de la valeur. Ces mesures sont divisées en deux catégories : les analyses matériaux et les analyses dispositifs.Ensuite, nous nous focalisons sur les analyses matériaux à l’échelle nanométrique. Nous présentons d’abord des mesures de dopage à l’échelle nanométrique, à l’aide d’une technique avancée de CP-AFM, appelée Resiscope. Nous montrons que cette technique peut détecter des changements de dopage dans la gamme 1015 à 1020 atomes.cm-3, avec une résolution nanométrique et un bon ratio signal/bruit. Puis, nous présentons des mesures de durée de décroissance sur des wafers silicium cristallin passivés. Les mesures sont réalisées sur la tranche non-passivée des échantillons. Nous montrons que, même si la tranche n’est pas passivée, les durées de décroissance obtenue par KPFM ont une bonne corrélation avec les temps de vie des wafers mesurées par décroissance de la photoconductivité détectée par micro-ondes.Par la suite, nous nous concentrons sur les analyses dispositif. A l’aide du KPFM, nous analysons deux types de cellules solaires silicium cristallin : les cellules solaires silicium épitaxié (epi-Si) et les cellules solaires hétérojonctions à contact arrière (IBC). En particulier, nous nous focalisons sur l’analyse de dispositifs en condition d’opération. Nous étudions d’abord l’influence de la tension électrique appliquée et nous montrons que les effets de résistance et de diode peuvent être détectés à l’échelle nanométrique. Les mesures de KPFM sont comparées aux mesures de microscopie électronique à balayage (SEM) dans les mêmes conditions, puisque le SEM est aussi sensible au potentiel de surface. Nous montrons que les mesures KPFM sur la tranche de cellules solaires epi-Si peuvent permettre d’étudier les changements de champ électrique avec la tension électrique appliquée. De plus, si la tension électrique est modulée en fréquence, nous montrons que des mesures de temps de vie peuvent être effectuées à l’échelle locale sur la tranche de cellules solaires epi-Si, ce qui peut permettre de détecter les interfaces limitantes. Puis, nous étudions l’influence de l’illumination sur les mesures KPFM et CP-AFM. Nous effectuons des mesures sur la tranche de cellules epi-Si sous différentes valeurs d’intensité et longueurs d’onde d’illumination. Nous montrons une bonne sensibilité des mesures KPFM à l’illumination. Cependant, nous montrons que pour différentes longueurs d’onde, à tension de circuit ouvert fixé, nos mesures ne sont pas corrélées avec les mesures de rendement quantique interne, comme nous le pensions.Enfin, nous résumons notre travail dans un tableau qui représente les forces et faiblesses des techniques pour les différentes mesures d’intérêt exposées précédemment. A partir de ce tableau, nous imaginons un setup de microscopie « idéal » qui permette d’analyser les cellules solaires de manière fiable, versatile et précise. Pour finir, nous proposons des mesures d’intérêt qui pourraient être réalisées avec ce setup « idéal »
This thesis focuses on the investigation of crystalline silicon solar cells at the nano-scale using scanning probe microscopy (SPM) techniques. In particular, we chose to investigate electrical properties at the nano-scale using two SPM techniques: Kelvin Probe Force Microscopy (KPFM) and Conducting Probe Atomic Force Microscopy (CP-AFM).First, we highlight the strengths and weaknesses of both these techniques compared to electron microscopy techniques, which can also help investigate electrical properties at the nano-scale. This comprehensive comparison enables to identify measurements where KPFM and CP-AFM are particularly adequate. These measurements are divided in two categories: material investigation and devices investigation.Then, we focus on materials investigation at the nano-scale using SPM techniques. We first present doping measurements at the nano-scale using an advanced CP-AFM technique called Resiscope. We prove that this technique could detect doping changes in the range 1015 and 1020 atoms.cm-3 with a nano-scale resolution and a high signal/noise ratio. Then, we highlight decay time measurements on passivated crystalline silicon wafers using KPFM. Measurements are performed on the unpassivated cross-section. We show that, even though the cross-section is not passivated, decay times measurements obtained with KPFM are in good agreement with lifetimes measured by microwave photoconductivity decay.Subsequently, we focus on device measurements. Using KPFM, we investigate two different crystalline silicon solar cell architectures: epitaxial silicon (epi-Si) solar cells and interdigitated back contact (IBC) heterojunction solar cells. In particular, we focus on measurements on devices under operating conditions. We first study the influence of the applied electrical bias. We study the sensitivity of surface potential to electrical bias and we show that diode and resistance effects can be detected at the nano-scale. KPFM measurements are compared to scanning electron microscopy (SEM) measurements in the same conditions since SEM is also sensitive to surface potential. We show that KPFM measurements on the cross-section of epi-Si solar cells can help detect electric field changes with electrical bias. Besides, if the electrical bias is frequency modulated, we show that lifetime measurements can be performed on the cross-section of epi-Si solar cells and can help detect limiting interfaces and layers. Then, we study the influence of illumination on KPFM and CP-AFM measurements. We perform photovoltage and photocurrent measurements on the cross-section of epi-Si solar under different values of illumination intensity and illumination wavelength. We show a good sensitivity of KPFM measurements to illumination. However, we show that measurements for different wavelengths at a given open circuit voltage, are not correlated with the internal quantum efficiency, as we could have expected.Finally, we summarize our work in a table showing the impact of strengths and weaknesses of the techniques for the different measurements highlighted. From this table, we imagine an “ideal” microscopy setup to investigate crystalline silicon solar cells in a reliable, versatile and accurate way. We propose investigations of interest that could be carried out using this “ideal” setup
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Zhang, Yanfeng. "Nano-Crystalline &Amorphous Silicon PhotoTransistor Performance Analysis". Thesis, 2009. http://hdl.handle.net/10012/4586.

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In this thesis, we compared electrical performance and stability of a novel nanocrystalline Si (nc-Si) thin film phototransistor (TFT) phototransistor and a regular amorphous silicon (a-Si:H) TFT phototransistor for large area imaging applications. The electrical performance parameters of nc-Si TFT phototransistor were extracted from the electrical (current-voltage) testing in dark and under illumination. The field-effect mobility is found to be around 1.2 cm2V-1s-1, the threshold voltage around 3.9V and the sub-threshold voltage slope around 0.47V/Dec. Optical properties of nc-Si TFT phototransistor have been evaluated under the green light illumination in the range of 1014 – 1017 lum, and the photocurrent gain and the external quantum efficiency were extracted from the experimental results. By comparing the results with those for a-Si:H TFTs measured under the same conditions, we found that nc-Si TFT has higher photo current gain under low illumination intensity, 5 ×1014 to 7 ×1015 lum. This thesis shows the relations bewteen the photo current gain, the external quantum efficiency, TFT drain and TFT gate bias; the photo current gain and the external quantum efficiency can be controlled by the Vds and the Vgs.
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Kao, Ming-Hsuan, i 高名璿. "Optimal Surface Nano Structure in Crystalline Silicon Solar Cells". Thesis, 2011. http://ndltd.ncl.edu.tw/handle/89127942643988468447.

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碩士
元智大學
光電工程研究所
99
Ｗe successfully form self-assemble ,close-packed and monolayer polystyrene nanospheres on the surface of silicon wafers, by employing simpley and cost-effectively spin-coating method. These nanospheres are used as sacrificial etching masks for reactive ion etching (RIE) process to fabricate different profile nano-arrays characterized as broadband antireflective and effective carrier collection structures for enhancing light harvesting of crystalline Si-based solar cells. Conventional antireflection layers were usually fabricated by depositing a single or multiple layers with restricted thickness and material selection on the silicon solar cells. However, the conventional method exhibited several drawbacks : 1. The stack of layers serve narrow-band antireflective properties. 2. Thermal mismatch and instability of the thin-film stacks have been the major obstacles to achieve broadband antireflection coatings. 3. Selection of materials with proper dielectric constants is difficult. According to the previous studies, the surface nano-arrays were reported to exhibit better broadband antireflective characteristics than the multiple antireflective layers, it opens up exciting opportunities for photovoltaic devices to further improve performance. In this project, we intend to demonstrate a high performance, large area Si solar cells by integrateing the antireflective nanostructure, We utilized rigorous coupled wave analysis (RCWA) method to calculate the reflectance of the nanostructured solar cells and desire to further optimize the light harvesting of the cells. In addition, implementation of the nanostructure will be conducted on silicon-based solar cells to reduce the broadband reflectance. After the RIE process, the samples with trapezoid structure were treated by dipping in HF:HNO3:H2O (2:48:50) solution to remove the damaged layer. This step is called defect removal etching (DRE). Not only the reflectance were reduced but also the lifetime was increased after DRE process. The data of lifetime and reflectance were input to APSYS simulator to calculate the short circuit current, open circuit voltage, and power conversion effeciency. The effeciency of trapezoid structures with DRE treatment achieve 15.51%, which shows an 16.53% compared to flat Si solar cells. We believe the trapezoid structures with DRE treatment are excellent anti-reflectance structures, which are promising candidates to realize the low-cost, high-efficiency solar cells.
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Luo, Zhiquan. "Nanoindentation study of buckling and friction of silicon nanolines". 2009. http://hdl.handle.net/2152/6576.

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Silicon-based nanostructures are essential building blocks for nanoelectronic devices and nano-electromechanical systems (NEMS). As the silicon device size continues to scale down, the surface to volume ratio becomes larger, rendering the properties of surfaces and interfaces more important for improving the properties of the nano-devices and systems. One of those properties is the friction, which is important in controlling the functionality and reliability of the nano-device and systems. The goal of this dissertation is to investigate the deformation and friction behaviors of single crystalline silicon nanolines (SiNLs) using nanoindentation techniques. Following an introduction and a summary of the theoretical background of contact friction in Chapters 1 and 2, the results of this thesis are presented in three chapters. In Chapter 3, the fabrication of the silicon nanolines is described. The fabrication method yielded high-quality single-crystals with line width ranging from 30nm to 90nm and height to width aspect ratio ranging from 10 to 25. These SiNL structures have properties and dimensions well suited for the study of the mechanical and friction behaviors at the nanoscale. In Chapter 4, we describe the study of the mechanical properties of SiNLs using the nanoindentation method. The loading-displacement curves show that the critical load to induce the buckling of the SiNLs can be correlated to the contact friction and geometry of SiNLs. A map was built as a guideline to describe the selection of buckling modes. The map was divided into three regions where different regions correlate to different buckling modes including Mode I, Mode II and slidingbending of SiNLs. In Chapter 5, we describe the study of the contact friction of the SiNL structures. The friction coefficient at the contact was extracted from the loaddisplacement curves. Subsequently, the frictional shear stress was evaluated. In addition, the effect of the interface between the indenter and SiNLs was investigated using SiNLs with surfaces coated by a thin silicon dioxide or chromium film. The material of the interface was found to influence significantly the contact friction and its behavior. Cyclic loading-unloading experiments showed the friction coefficient dramatically changed after only a few loading cycles, indicating the contact history is important in controlling the friction behaviors of SiNLs at nanoscales. This thesis is concluded with a summary of the results and proposed future studies.
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Chen, Jiun-Wei, i 陳均維. "Study of Crystalline Silicon Wafer Based Solar Cells with Nano-Silver Particles". Thesis, 2010. http://ndltd.ncl.edu.tw/handle/35374572723841455440.

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Wong, Xuan-Bo, i 翁瑄博. "Nano/Micro crystalline diamond on silicon-based templates for field emission studies". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/30469354544011056483.

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碩士
國立臺灣科技大學
光電工程研究所
101
In this dissertation, Nano/Micro crystalline diamond were fabricated on different silicon-based structures to study the effect on the field emission properties. NCD and MCD were deposited on Planar-Si, Pyramid-Si and SiNWs/Pyramid-Si by microwave plasma chemical vapor deposition system. The surface morphologies of diamond were characterized by the field emission scanning electron microscopy. The characterizations of diamond were analyzed by Raman, XPS and AFM to show the quality, the sp3/sp2 ratio and average roughness of diamond, respectively. It is found that the turn on electric field of NCD/SiNWs/Pyramid-Si field emission cathode is lower (3.11 V/μm) through ultrasonication pretreatment than other structures such as NCD/Planar-Si (4.8 V/μm) and NCD/Pyramid-Si (4.35 V/μm). And the lower turn on electric field NCD/SiNWs/Pyramid-Si (3.2 V/μm) through rub and ultrasonication pretreatments than other structure such as NCD/Pyramid-Si (3.9 V/μm). While using C10H16 and ethylene glycol as seeds layer to deposite MCD on Planar-Si and Pyramid structures, the turn on field improved from 3.86 V/μm of MCD/Planar-Si to 3.15 V/μm of MCD/Pyramid-Si. And 4.5 V/μm of MCD/Planar-Si to 2.9 V/μm of MCD/Pyramid-Si by using C10H16 and diethylene glycol as seeds layer. Keyword: NCD, SiNWs, Pyramid
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Chuck i 徐文慶. "Defect Control and Nano-Texturing for Efficiency Improvement of Crystalline Silicon Solar Cells". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/87123479141703366040.

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Sharma, Puneet. "Study of nano-crystalline silicon deposited by VHF-PE CVD for solar cell devices /". 2005.

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Lin, Tsung-ying, i 林宗穎. "Fabrication of Nano-crystalline Silicon Thin Film on Flexible Substrate by Vacuum Arc Discharge". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/57707674210668756004.

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碩士
大同大學
光電工程研究所
97
Nano-crystalline silicon has been deposited on glass and plastic substrates by direct vacuum arc system at room to cryogenic temperature(77 K). Solid silicon wafer source were amount on both anode and cathode to be the electrodes which were highly doped single crystal silicon wafer(0.005 Ω/cm). It is suitable for deposited thin films on flexible substrate due to low deposition temperature. Silicon films were characterized by Raman spectroscopy、x-ray diffraction (XRD)、tunneling electron microscope (TEM) and scanning electron microscope (SEM). The result revealed that the crystalline structure embedded in amorphous matrix. High-resolution transmission electron microscopy (HRTEM) was used for direct analyzing the particle where the fully crystallized structure were inert the particles and these particles were random distributed over the substrate. The crystalline volume fraction were calculated from Raman spectrum and it showed the values between 0~92 ％. The impurity concentration was measured by SIMS, that the P-type and N-type impurity was permeated simultaneously into the film during the deposition without additional doping process, thus P-N junction could be achieved. Nano-crystalline silicon has higher electron mobility and more stability against prolong light exposure than amorphous silicon. According to our research, the opto-electronic effect were not obviously, we assume that a large number of defects existed in the films. Compared to CVD process, arc discharge system has the advantages of low cost, less environment pollution and non-dangerous of processing. Such research has not yet been observed. Low temperature deposited nano-crystalline silicon thin film has attracted much attention due to applicable on low-cost substrates, like glass and flexible plastic substrate. Key words: Direct vacuum arc, Flexible substrate, crystalline volume fraction.
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Pei-LingLi i 黎沛伶. "Fabrication and Development of Nano-crystalline Silicon Based Solar Cells and Its Photovoltaic Characteristics". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/64109734583801186936.

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博士
國立成功大學
航空太空工程學系碩博士班
101
The objective of the current study is to develop and fabricate silicon based crystalline materials in order to make into photovoltaic (PV) solar cells. The current study of silicon films for PV applications includes two different parts based on the individual matrix around the crystalline materials. One of the studies is the development and fabrication of applying silicon quantum dots thin films to crystalline silicon solar cells, the other is the study of hydrogenated microcrystalline silicon thin film solar cells. For characterization of silicon quantum dots films under different process conditions, after deposition of silicon rich nitride layer by the PECVD process a high temperature anneal is adopted so that excessive amount of silicon quantum dots can be precipitates in the silicon rich nitride layer. An optimum condition for the anneal to obtain silicon quantum dots film has been verified through series of tests. In addition, the number of silicon quantum dots within the film can be controlled by varying the mixing ratio of silane and ammonia gas. This variation of silicon quantum density within the film causes different photo response. The conversion efficiency of the solar cell with silicon film embedded with silicon quantum dots can be improved from 5.42% to 6.49%. The other part is development and fabrication of microcrystalline silicon thin film solar cells with intrinsic layer deposited at different hydrogen gas flow, silane flow rate, deposition working pressure and power density at 40.68 MHz with very-high-frequency plasma-enhanced chemical vapor deposition system. As the results of film properties, the increase of hydrogen gas flow or the decrease of silane gas flow can increase the crystalline volume ratio in the films. The efficiency of solar cell made by this thin film increases from 4.54% to5.39% as the crystalline volume ratio in the film increases. However, the efficiency of the solar cell decreases as the crystalline volume ratio becomes too high. The increase in fabrication pressure from 5Torr to 7Torr can lead to notable improvement in cell efficiency from 5.39% to6.39%, but the increase in power density does not have any improvement in cell efficiency. Further improvement of the cell efficiency can be achieved by changing the structure of solar cell, and surface treatment on the p-i surface of the solar cell. It is shown that the diborane gas flush treatment on the p layer can improve the cell efficiency. Besides, replacing microcrystalline p layer with the amorphous p type silicon carbide can substantially improve the solar cell efficiency due to the significant increase in Voc but slight decrease in currents density. The conversion efficiency increases from 6.39% to8.35%.
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Części książek na temat "Nano-Crystalline Silicon"

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Toriyama, Toshiyuki, Yasutada Tanimoto i Susumu Sugiyama. "Single Crystalline Silicon Nano Wire Piezoresistors for Mechanical Sensors". W Transducers ’01 Eurosensors XV, 974–77. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_230.

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Filikov, V. A., A. I. Popov, V. P. Cheparin i V. A. Ligachev. "Morphology Formation in Silicon-Based Thin Amorphous Films as Self-Organization Manifestation". W Nano-Crystalline and Thin Film Magnetic Oxides, 347–51. Dordrecht: Springer Netherlands, 1999. http://dx.doi.org/10.1007/978-94-011-4493-3_32.

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He, Y., C. Yin, W. Tang i T. Gong. "The Structure and Properties of Nano-Size Crystalline Silicon Films". W Physics and Chemistry of Finite Systems: From Clusters to Crystals, 1245–50. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-017-2645-0_171.

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Ayomanor, B. O., C. Iyen, I. S. Iyen, V. Mbah, D. I. Anyaogu, D. N. Dawuk, S. D. Ndiriza, S. O. Aniko i M. Omonokhua. "Characterization of Nano-crystalline Metallurgical-Grade Silicon Prepared from Rice Husk Ash". W Characterization of Minerals, Metals, and Materials 2022, 101–11. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-92373-0_10.

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Baek, Seung, Jae Mean Koo i Chang Sung Seok. "Fracture Characteristic of Single Crystalline Silicon Using Nano-Indentation and Finite Element Analysis". W Fracture and Strength of Solids VI, 601–6. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-989-x.601.

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Patnaik, Rakesh K., Devi Prasad Pattnaik i Chayanika Bose. "Performance of All-Back-Contact Nanowire Solar Cell with a Nano-Crystalline Silicon Layer". W Proceedings of 2nd International Conference on Micro-Electronics, Electromagnetics and Telecommunications, 1–11. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-4280-5_1.

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Swain, Bibhu P. "Effect of Residual Stress on P Doped Nano-Crystalline Silicon Deposited by HWCVD Films". W Advanced Materials Research, 653–56. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-463-4.653.

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Das, Amal, Deleep R. Nair, Amitava Dasgupta i M. S. Ramachandra Rao. "Growth Mechanism and Structural Characterization of Nano-crystalline Diamond (NCD) and Micro-crystalline Diamond (MCD) Films Deposited on Silicon Substrates". W Springer Proceedings in Physics, 511–15. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_79.

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Pattnaik, Amruta, Monika Tomar, Som Mondal, Vinay Gupta i B. Prasad. "Enhancement in Power Conversion Efficiency of Multi-crystalline Silicon Solar Cell by ZnS Nano Particles with PMMA". W Springer Proceedings in Physics, 399–405. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_61.

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Gupta, Mool C., Leonid V. Zhigilei, Miao He i Zeming Sun. "Generation and Annealing of Crystalline Disorder in Laser Processing of Silicon". W Handbook of Laser Micro- and Nano-Engineering, 1–31. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-319-69537-2_15-1.

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Streszczenia konferencji na temat "Nano-Crystalline Silicon"

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Wei, Yayi, Guozhen Zheng i Yuliang L. He. "Interfacial deep levels in nano-crystalline silicon films". W Thin Film Physics and Applications: Second International Conference, redaktorzy Shixun Zhou, Yongling Wang, Yi-Xin Chen i Shuzheng Mao. SPIE, 1994. http://dx.doi.org/10.1117/12.190784.

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Lucovsky, G., i Jinwoo Kim. "Qualitative and quantitative differences between non-crystalline and nano-crystalline oxides in device technologies". W 2013 14th International Conference on Ultimate Integration on Silicon (ULIS 2013). IEEE, 2013. http://dx.doi.org/10.1109/ulis.2013.6523511.

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Koshida, N., i B. Gelloz. "Photonic and related device applications of nano-crystalline silicon". W Optics East 2007, redaktorzy Achyut K. Dutta, Yasutake Ohishi, Niloy K. Dutta i Andrei V. Lavrinenko. SPIE, 2007. http://dx.doi.org/10.1117/12.732812.

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Jestin, Yoann, Georg Pucker, Mher Ghulinyan, Lorenza Ferrario, Pierluigi Bellutti, Antonio Picciotto, Amos Collini i in. "Silicon solar cells with nano-crystalline silicon down shifter: experiment and modeling". W SPIE Solar Energy + Technology, redaktor Loucas Tsakalakos. SPIE, 2010. http://dx.doi.org/10.1117/12.861978.

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Hyunwoo Lee, Eunjoo Lee i Soohong Lee. "Investigation of nano-porous silicon antireflection coatings for crystalline silicon solar cells". W 2006 IEEE Nanotechnology Materials and Devices Conference. IEEE, 2006. http://dx.doi.org/10.1109/nmdc.2006.4388757.

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Iwasita, Shinya, Toshihisa Inoue, Kazunori Koga, Masaharu Shiratani, Shota Nunomura i Michio Kondo. "Properties of Nano-Crystalline Silicon Films for Top Solar Cells". W Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279809.

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Takahashi, Fuyuto, Shun Takizawa, Hirofumi Hidai, Katsuhiko Miyamoto, Ryuji Morita i Takashige Omatsu. "Chiral mono-crystalline silicon nano-cone fabrication by optical vortex pumping". W CLEO: Science and Innovations. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/cleo_si.2014.sf1j.5.

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Chun-Ti Lu i C. W. Liu. "Antireflection of nano-sized SiO sphere arrays on crystalline silicon solar cells". W 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE, 2015. http://dx.doi.org/10.1109/nusod.2015.7292864.

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Cantley, Kurtis D., Anand Subramaniam, Harvey J. Stiegler, Richard A. Chapman i Eric M. Vogel. "Spike timing-dependent synaptic plasticity using memristors and nano-crystalline silicon TFT memories". W 2011 IEEE 11th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2011. http://dx.doi.org/10.1109/nano.2011.6144430.

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Lee, Jong Hak, Yu Jun Lee, Jung Sam Kim, Seo Kyung Jeong, Min Su Kim, Seok Hoon Oh, Kyoung Wook Jung, Soo Yong Son i Chang Reol Kim. "Nano Probe Analysis of Device Characteristics Affected by Ring Type Crystalline Defect". W ISTFA 2011. ASM International, 2011. http://dx.doi.org/10.31399/asm.cp.istfa2011p0322.

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Streszczenie:
Abstract In this work, crystalline defects (dislocations) occurred in the silicon substrate during annealing SOD (Spin On Dielectric) which is an easy choice for its superior STI gap-fill ability. The reversal of address data that share same SIO (Signal Input Out) line in a DQ arises from crystalline defects. The failure analysis of physical methods has difficulty finding minute defects within the active because it is scarcely detectable from the top view. Situation can be well understood by electrical analysis using the nano probe. Due to its ability to probing contact nodes around the fail area, a ring type crystalline defect which is hardly detected from the top view was effectively analyzed by 3D TEM with the assistance of nano probe. This work shows that hybrid analysis of electrical method by nano probe and physical method by 3D TEM is useful and effective in failure analysis in semiconductor.
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