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Artykuły w czasopismach na temat "Nano-Crystalline Diamond"
Hua, Li. "Nano-Crystalline Diamond Development and Application". Advanced Materials Research 476-478 (luty 2012): 1500–1503. http://dx.doi.org/10.4028/www.scientific.net/amr.476-478.1500.
Pełny tekst źródłaWang, Xinchang, Chengchuan Wang i Fanghong Sun. "Development and growth time optimization of boron-doped micro-crystalline, undoped micro-crystalline and undoped nano-crystalline composite diamond film". Proceedings of the Institution of Mechanical Engineers, Part B: Journal of Engineering Manufacture 232, nr 7 (29.08.2016): 1244–58. http://dx.doi.org/10.1177/0954405416666902.
Pełny tekst źródłaPENG, J. L., SHAUN BULCOCK, PETER I. BELOBROV i L. A. BURSILL. "SURFACE BONDING STATES OF NANO-CRYSTALLINE DIAMOND BALLS". International Journal of Modern Physics B 15, nr 31 (20.12.2001): 4071–85. http://dx.doi.org/10.1142/s0217979201007865.
Pełny tekst źródłaMurakami, Riichi, Shinichiro Fukui, Daisuke Yonekura i Cheolmun Yim. "Study of Boron-Doped Diamond Films by Microwave Plasma CVD Method". Key Engineering Materials 353-358 (wrzesień 2007): 1883–86. http://dx.doi.org/10.4028/www.scientific.net/kem.353-358.1883.
Pełny tekst źródłaLei, Xuelin, Yun He i Fanghong Sun. "Tribological properties of TiN/diamond and TiAlN/diamond bilayer films sliding against carbon steel". Proceedings of the Institution of Mechanical Engineers, Part J: Journal of Engineering Tribology 232, nr 8 (29.12.2017): 1014–24. http://dx.doi.org/10.1177/1350650117750975.
Pełny tekst źródłaHaubner, Roland, i Benno Lux. "Deposition of ballas diamond and nano-crystalline diamond". International Journal of Refractory Metals and Hard Materials 20, nr 2 (marzec 2002): 93–100. http://dx.doi.org/10.1016/s0263-4368(02)00006-9.
Pełny tekst źródłaLuo, Shenq Y., Jui-Kang Kuo, Brian Yeh, James C. Sung, Chuang-Wen Dai i Tsung J. Tsai. "The tribology of nano-crystalline diamond". Materials Chemistry and Physics 72, nr 2 (listopad 2001): 133–35. http://dx.doi.org/10.1016/s0254-0584(01)00422-9.
Pełny tekst źródłaFan, Zhang, Zhang Yu-Feng, Gao Qiao-Jun, Zhang Shu-Lin, Lin Ting, Peng Xiao-Fu i Lin Zeng-Dong. "Synthesis of Nano-crystalline Diamond Films". Chinese Physics Letters 17, nr 5 (1.05.2000): 376–78. http://dx.doi.org/10.1088/0256-307x/17/5/024.
Pełny tekst źródłaAndo, Y., Y. Nishibayashi i A. Sawabe. "‘Nano-rods’ of single crystalline diamond". Diamond and Related Materials 13, nr 4-8 (kwiecień 2004): 633–37. http://dx.doi.org/10.1016/j.diamond.2003.10.066.
Pełny tekst źródłaBarbosa, Divani C., M. R. Baldan, V. J. Trava-Airoldi i Evaldo Jose Corat. "Micro, Nano and Ultranano-Crystalline Diamond Deposition". Materials Science Forum 802 (grudzień 2014): 168–73. http://dx.doi.org/10.4028/www.scientific.net/msf.802.168.
Pełny tekst źródłaRozprawy doktorskie na temat "Nano-Crystalline Diamond"
Wu, Tao. "Tooling performance in micro milling : modelling, simulation and experimental study". Thesis, Brunel University, 2012. http://bura.brunel.ac.uk/handle/2438/7211.
Pełny tekst źródłaCai, Yixiao. "Bio-Nano Interactions : Synthesis, Functionalization and Characterization of Biomaterial Interfaces". Doctoral thesis, Uppsala universitet, Tillämpad materialvetenskap, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-277121.
Pełny tekst źródłaAbdolvand, Reza. "Thin-film piezoelectric-on-substrate resonators and narrowband filters". Diss., Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/28113.
Pełny tekst źródłaCommittee Chair: Farrokh Ayazi; Committee Member: James D. Meindl; Committee Member: John D. Cressler; Committee Member: Nazanin Bassiri-Gharb; Committee Member: Oliver Brand.
Chimowa, George. "Synthesis and characterization of nano-crystalline diamond films". Thesis, 2011. http://hdl.handle.net/10539/10410.
Pełny tekst źródłaThe objective of this project is to understand the details of the electronic transport in low dimensional carbon structures at low temperatures as well as high magnetic fields. The emphasis is on the quasi-2 dimensional thin grain boundary regions of nanodiamond films and one dimensional carbon nanotubes. As such nitrogen “doped” and undoped nanodiamond films were synthesized by the hot filament chemical vapor deposition method (HFCVD). The films were micro-structurally and electrically characterized using several techniques such as Raman spectroscopy, scanning electron microscopy, transmission electron microscopy, atomic force microscopy and magnetoresistance (MR) measurements. The electronic transport properties were compared to the films deposited by microwave plasma enhanced chemical vapour deposition (MWCVD). The conductivity revealed a typical semiconducting and semi-metallic behavior for the HFCVD films depending on the nitrogen percentage in the chamber. The dephasing time of the electronic wave function was found to be weakly temperature dependant i.e. τ T-p with p < 1, a behavior reported in artificial superlattices. These results show potential application of these materials in novel nano-electronic devices. Previously the transport mechanism in nanodiamond films has been attributed to hopping conduction in the grain boundaries which is predominately disordered sp2 phases. Our studies on nanodiamond films have however shown different mechanisms in these films. We observed very little contribution from hopping and pronounced weak localization contributions in nanodiamond films. We thus establish the significance of tunneling transport in nanodiamond films. We also studied the electronic transport in films of metal filled multiwalled carbon nanotubes which show significant contribution from the hopping mechanism and a negative magnetoresistance at low fields that crosses over into positive MR at high magnetic fields.
Wu, Yao-Ming, i 吳耀明. "The study of arrayed nano-crystalline diamond devices". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/86720787459382320767.
Pełny tekst źródła國立臺灣科技大學
電子工程系
97
In this dissertation, the different array interval structure of nanocrystalline diamond (NCD) films were fabricated to study the effect on the field emission properties and gas ionization sensors on different pressure in nitrogen gas, respectively. NCD films were deposited on silicon substrate by microwave plasma chemical vapor deposition system. The surface morphology of NCD films were characterized by the field emission scanning electron microscopy. The characterization of NCD films were analyzed by Raman, XPS and AFM to show the quality, the surface composition and average roughness of nanocrystalline diamond, respectively. The array structures were fabricated by photolithography technique with the interval of 100 , 500 and 1000μm, respectively.. Field emission properties were measured with anode voltage from 0 to 1100 V. It is found that the turn on electric field were improved from 14.67 V/μm to 8.5 V/μm when the array structure interval was increased from 100μm to 1000μm. It is indicated that the field emission properties were improved with the array interval increased. The arrayed nano-crystalline diamond devices of gas ionization sensors were performed using N2 gas with the array interval of 100, 500 and 1000μm, respectively. However, it was found that the breakdown voltage decreased with the array interval decreased.
Chiang, Horng-Yi, i 江泓逸. "Influence on characteristics of “micro-crystalline diamond/ultra nano-crystalline diamond” in addition of argon gas". Thesis, 2011. http://ndltd.ncl.edu.tw/handle/39425394058294825181.
Pełny tekst źródła國立臺灣師範大學
物理學系
99
Diamond films possess excellent physical, chemical, and mechanical properties, such that the syntheses of diamond films have been the focus of research. Moreover, the diamond films own marvelous field emission properties and have great patential for the application on the electron field emission devices. The chemical vapor deposition (CVD) has been the most widely utilized process for growing the diamond films. In this study, we used microwave plasma enhanced chemical vapor deposition (MPECVD) technique to synthesize microcrystalline diamond/ultrananocrystalline diamond (MCD/UNCD) composite films, for the purpose of investigating the growth mechanism and the related microstructural characteristics of the MCD/UNCD composite films. We first grow ultrananocrystalline diamond (UNCD) thin films as nucleation layers, followed by a secondary MPECVD process for growing microcrystalline diamond (MCD) thin films. We used Raman spectroscopy, field emission scanning electron microscopy (FESEM), optical emission spectroscopy (OES), and transmission electron microscopy (TEM) to characterize the MCD/UNCD thin films. The growth mechanism was discussed based on these investigations. In the first part of research, different proportion of argon (0-90 %) was added into CH4/H2 plasma for the deposition of the secondary MCD layer. Among them, the 50% Ar plasma results in the best electron field emission properties, that is, the turn-on field of 6.50 V/μm for (MCD50)1h/UNCD1h and of 5.0 V/μm for (MCD50)1h/UNCD3h films. TEM examinations indicated that the two step MPECVD process markedly modified the gannular structure of UNCD films, resulting in large-grain/small-grain duplex microstructure. In the second part of research, we changed the deposition time for growing the MCD layer (with 50% Ar plasma). We observe that 1 h deposition of MCD layer leads to the best electron field emission properties. The best electron field emission properties obtainable are:turn-on field of 5.0 V/μm with EFE current density of 0.70 mA/cm2 at an applied field of 27.5 V/μm.
鄭文秀. "Characteristic study and fabrication of field emitters by ultra-nano crystalline and micro-crystalline diamond". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/02184058059511767167.
Pełny tekst źródłaChen, Chien-Fu, i 陳建甫. "Carbon Embedded Nano-Crystalline Diamond Film and Its Field Emission Properties". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/17724384685705005960.
Pełny tekst źródła國立清華大學
材料科學工程學系
100
Diamond film has attracted immense attention as a field emission material due to its negative electron affinity and robust mechanical and chemical properties. It has been widely investigated. Based on literatures, the critical factors of diamond film field emission are grain size, the structure of grain boundary, conductivity, graphite structure distribution, structural defect density, surface roughness, surface functional groups, etc. In this work, nano-graphite fiber embedded nano-crystalline diamond films were synthesized, and it’s excellent electron field emission properties were studied. The nano-graphite fiber embedded nano-crystalline diamond film can be turned on at a low field as 4.4 V/μm and attain large field emission current density about 0.06 mA/cm2 at 7 V/μm applied field. The embedment of nano-graphite increased the conductivity of the film, and lowered the work function of nano-crystalline diamond film. The defects in the diamond structure created additional energy levels in the diamond band structure, which induced electron emission at low electric fields. The morphology and surface roughness of carbon embedded nano-crystalline diamond films were studied by field emission scanning electron microscope (FESEM) and AFM. Raman, XPS, XRD, TEM, CL are used to investigate the microstructure of the films. Conductivity and field emission properties were measured by four point probe and homemade field emission system respectively. In the future, the parameters of MPECVD grown nano-crystalline diamond film were further optimized to get better field emission cold cathode materials.
Wong, Xuan-Bo, i 翁瑄博. "Nano/Micro crystalline diamond on silicon-based templates for field emission studies". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/30469354544011056483.
Pełny tekst źródła國立臺灣科技大學
光電工程研究所
101
In this dissertation, Nano/Micro crystalline diamond were fabricated on different silicon-based structures to study the effect on the field emission properties. NCD and MCD were deposited on Planar-Si, Pyramid-Si and SiNWs/Pyramid-Si by microwave plasma chemical vapor deposition system. The surface morphologies of diamond were characterized by the field emission scanning electron microscopy. The characterizations of diamond were analyzed by Raman, XPS and AFM to show the quality, the sp3/sp2 ratio and average roughness of diamond, respectively. It is found that the turn on electric field of NCD/SiNWs/Pyramid-Si field emission cathode is lower (3.11 V/μm) through ultrasonication pretreatment than other structures such as NCD/Planar-Si (4.8 V/μm) and NCD/Pyramid-Si (4.35 V/μm). And the lower turn on electric field NCD/SiNWs/Pyramid-Si (3.2 V/μm) through rub and ultrasonication pretreatments than other structure such as NCD/Pyramid-Si (3.9 V/μm). While using C10H16 and ethylene glycol as seeds layer to deposite MCD on Planar-Si and Pyramid structures, the turn on field improved from 3.86 V/μm of MCD/Planar-Si to 3.15 V/μm of MCD/Pyramid-Si. And 4.5 V/μm of MCD/Planar-Si to 2.9 V/μm of MCD/Pyramid-Si by using C10H16 and diethylene glycol as seeds layer. Keyword: NCD, SiNWs, Pyramid
Ye, Ke-Yang, i 葉可揚. "X-ray Absorption Spectroscopy Study of Cu Ion Implanted Ultra-nano Crystalline Diamond Films". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/70538594278865464507.
Pełny tekst źródła淡江大學
物理學系碩士班
103
We have performed x-ray absorption near edge structure (XANES) study on Cu ion implanted, fluence varies from 1x1015 to 1x1017 ions/cm2, ultra-nano crystalline diamond (UNCD) films. From the XANES of C K-edge of the films, we found that the absorption intensity of sp3 structure decreased tremendously. In the meantime, the exciton peak and the second band gap are completely disappeared. We also observed the absorption intensities due to sp2 structure, C-OH bond, C-H bond and the surface defect peaks all increase. As the Cu-ion fluence reached 1x1016 ions/cm2, the absorption intensity of sp2 peak decreases, the intensities of C-H bond and the surface defect peaks increase. When the Cu-ion fluence reached 5x1016 ions/cm2, the sp2 peak shifts to lower energy, which may be related to the formation of amorphous carbon. Also the intensity of C-OH peak increases, and the intensities of C-H and the surface defect peaks decrease at fluence of 5x1016 ions/cm2. From the spectra of Cu K-edge, the intensity of the main peak, due to Cu 1s to 4p transition, decreases as the Cu-ion fluence increases. From Cu L2,3-edge we found an obvious broadening of the main absorption peaks at the highest fluence. When the fluence increases, sp3 structure decreases and sp2 structure increases. While the fluence exceeds 5x1016 ions/cm2, sp2 structure decreases and the amorphous carbon forms. At the highest fluence, Cu 3d-4s-4p hybridization increases.
Książki na temat "Nano-Crystalline Diamond"
Ligatchev, Valeri. Nano- and micro-crystalline diamond films and powders. Hauppauge, NY: Nova Science, 2009.
Znajdź pełny tekst źródłaCzęści książek na temat "Nano-Crystalline Diamond"
Hubík, Pavel, i Jiří J. Mareš. "Electron Transport Studies of Disorder and Dimensionality in Nano-Crystalline Diamond". W Hot Topics in Thermal Analysis and Calorimetry, 371–97. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-3150-1_17.
Pełny tekst źródłaDas, Amal, Deleep R. Nair, Amitava Dasgupta i M. S. Ramachandra Rao. "Growth Mechanism and Structural Characterization of Nano-crystalline Diamond (NCD) and Micro-crystalline Diamond (MCD) Films Deposited on Silicon Substrates". W Springer Proceedings in Physics, 511–15. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_79.
Pełny tekst źródłaAskari, Syed Jawid, i Fan Xiu Lu. "Deposition of a Well-Adherent Nano-Crystalline Diamond Coating on Titanium Using CH4-H2 Gas Mixture". W Materials Science Forum, 1145–48. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-462-6.1145.
Pełny tekst źródłaWang, Linjun, Jian Huang, Ke Tang i Yiben Xi. "Nano-Crystalline Diamond Films for X-ray Lithography Mask". W Lithography. InTech, 2010. http://dx.doi.org/10.5772/8178.
Pełny tekst źródłaBalachandran, Manoj. "Extraction of Preformed Mixed Phase Graphene Sheets from Graphitized Coal by Fungal Leaching". W Handbook of Research on Inventive Bioremediation Techniques, 287–99. IGI Global, 2017. http://dx.doi.org/10.4018/978-1-5225-2325-3.ch012.
Pełny tekst źródłaStreszczenia konferencji na temat "Nano-Crystalline Diamond"
Chubenko, O., S. S. Baturin, A. V. Sumant, A. V. Zinovev, K. K. Kovi i S. V. Baryshev. "Field emission microscopy of ultra-nano-crystalline diamond films". W 2017 30th International Vacuum Nanoelectronics Conference (IVNC). IEEE, 2017. http://dx.doi.org/10.1109/ivnc.2017.8051543.
Pełny tekst źródłaLiu, Fengbin, Jiadao Wang, Bing Liu, Xuemin Li i Darong Chen. "Effect of Surface Termination on Electronic Structure of Nano-Crystalline Diamond Film". W 2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems. IEEE, 2006. http://dx.doi.org/10.1109/nems.2006.334863.
Pełny tekst źródłaDipalo, M., M. Alomari, J. F. Carlin, N. Grandjean, M.-A. Diforte-Poisson, S. L. Delage i E. Kohn. "Thick nano-crystalline diamond overgrowth on InAlN/GaN devices for thermal management". W 2009 67th Annual Device Research Conference (DRC). IEEE, 2009. http://dx.doi.org/10.1109/drc.2009.5354861.
Pełny tekst źródłaGoldsmith, C., A. Sumant, O. Auciello, J. Carlisle, H. Zeng, J. C. M. Hwang, C. Palego i in. "Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches". W 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010. IEEE, 2010. http://dx.doi.org/10.1109/mwsym.2010.5517781.
Pełny tekst źródłaGoldsmith, C., A. Sumant, O. Auciello, J. Carlisle, H. Zeng, J. C. M. Hwang, C. Palego i in. "Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches". W 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010. IEEE, 2010. http://dx.doi.org/10.1109/mwsym.2010.5518076.
Pełny tekst źródłaCheng, Wen-Hsiu, Ping-Huan Tsai, Yi-Hung Chen, Hung-Yin Tsai i Robert Andok. "Fabrication of field emitters of ultra-nano-crystalline and micro-crystalline diamond films by the MPECVD method". W 1ST INTERNATIONAL CONFERENCE ON RADIATIONS AND APPLICATIONS (ICRA-2017). Author(s), 2018. http://dx.doi.org/10.1063/1.5048872.
Pełny tekst źródłaEikenberg, N., K. Ganesan, K. K. Lee, M. Edmonds, L. H. Willems van Beveren i S. Prawer. "Fabrication and investigation of Nitrogen doped ultra-nano-crystalline diamond Hall-bar devices". W 2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD). IEEE, 2012. http://dx.doi.org/10.1109/commad.2012.6472415.
Pełny tekst źródłaNishimura, K., H. Sasaoka, H. X. Wang i N. Jiang. "Fabrication of field emission lamps using nano-crystalline diamond on carbon nanowall films". W 2012 25th International Vacuum Nanoelectronics Conference (IVNC). IEEE, 2012. http://dx.doi.org/10.1109/ivnc.2012.6316958.
Pełny tekst źródłaASLANTAS, Kubilay, i Waleed AHMED. "Performance Analysis of Nano-Crystalline Diamond (NCD) Coating in Micro-Milling of Aluminum Alloy". W 2019 Advances in Science and Engineering Technology International Conferences (ASET). IEEE, 2019. http://dx.doi.org/10.1109/icaset.2019.8714352.
Pełny tekst źródłaSingh, Mukesh, Himanshu S. Jha i Pratima Agarwal. "Synthesis of high density nucleation of nano-crystalline diamond films on non carbon affinity substrates". W CARBON MATERIALS 2012 (CCM12): Carbon Materials for Energy Harvesting, Environment, Nanoscience and Technology. AIP, 2013. http://dx.doi.org/10.1063/1.4810060.
Pełny tekst źródłaRaporty organizacyjne na temat "Nano-Crystalline Diamond"
Kalish, Rafi, i James E. Butler. Optical Characterization of Boron-doped Nano-Crystalline Diamond. Fort Belvoir, VA: Defense Technical Information Center, lipiec 2002. http://dx.doi.org/10.21236/ada405197.
Pełny tekst źródłaDawedeit, Christoph. Thick Nano-Crystalline Diamond films for fusion applications. Office of Scientific and Technical Information (OSTI), czerwiec 2010. http://dx.doi.org/10.2172/1119893.
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