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Artykuły w czasopismach na temat „N-type solar cells”

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Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 9 lutego 2022

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1

Repo, Päivikki, Jan Benick, Ville Vähänissi, Jonas Schön, Guillaume von Gastrow, Bernd Steinhauser, Martin C. Schubert, Martin Hermle i Hele Savin. "N-type Black Silicon Solar Cells". Energy Procedia 38 (2013): 866–71. http://dx.doi.org/10.1016/j.egypro.2013.07.358.

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2

Derbouz, A., A. Slaoui, E. Jolivet, F. de Moro i C. Belouet. "N-type silicon RST ribbon solar cells". Solar Energy Materials and Solar Cells 107 (grudzień 2012): 212–18. http://dx.doi.org/10.1016/j.solmat.2012.06.024.

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3

Rothhardt, Philip, Sebastian Meier, Carsten Demberger, Andreas Wolf i Daniel Biro. "Codiffused Bifacial n-type Solar Cells (CoBiN)". Energy Procedia 55 (2014): 287–94. http://dx.doi.org/10.1016/j.egypro.2014.08.084.

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4

Stodolny, M. K., M. Lenes, Y. Wu, G. J. M. Janssen, I. G. Romijn, J. R. M. Luchies i L. J. Geerligs. "n-Type polysilicon passivating contact for industrial bifacial n-type solar cells". Solar Energy Materials and Solar Cells 158 (grudzień 2016): 24–28. http://dx.doi.org/10.1016/j.solmat.2016.06.034.

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5

Silva, J. A., M. Gauthier, C. Boulord, C. Oliver, A. Kaminski, B. Semmache i M. Lemiti. "Improving front contacts of n-type solar cells". Energy Procedia 8 (2011): 625–34. http://dx.doi.org/10.1016/j.egypro.2011.06.193.

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6

Meier, Sebastian, Stefan Maier, Carsten Demberger, Andreas Wolf, Daniel Biro i Stefan W. Glunz. "Fast Co-Diffusion Process for Bifacial n-Type Solar Cells". Solar RRL 1, nr 1 (21.11.2016): 1600005. http://dx.doi.org/10.1002/solr.201600005.

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7

Yang, Xing, Jiangtao Bian, Zhengxin Liu, Shuai Li, Chao Chen i Song He. "HIT Solar Cells with N-Type Low-Cost Metallurgical Si". Advances in OptoElectronics 2018 (18.01.2018): 1–5. http://dx.doi.org/10.1155/2018/7368175.

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A conversion efficiency of 20.23% of heterojunction with intrinsic thin layer (HIT) solar cell on 156 mm × 156 mm metallurgical Si wafer has been obtained. Applying AFORS-HET software simulation, HIT solar cell with metallurgical Si was investigated with regard to impurity concentration, compensation level, and their impacts on cell performance. It is known that a small amount of impurity in metallurgical Si materials is not harmful to solar cell properties.

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8

Ferrada, Pablo, Dominik Rudolph, Carlos Portillo, Adrian Adrian, Jonathan Correa‐Puerta, Rodrigo Sierpe, Valeria Campo i in. "Interface analysis of Ag/n‐type Si contacts in n‐type PERT solar cells". Progress in Photovoltaics: Research and Applications 28, nr 5 (3.02.2020): 358–71. http://dx.doi.org/10.1002/pip.3242.

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9

Kim, Sung, Seung Hyun Shin i Suk-Ho Choi. "N-i-p-type perovskite solar cells employing n-type graphene transparent conductive electrodes". Journal of Alloys and Compounds 786 (maj 2019): 614–20. http://dx.doi.org/10.1016/j.jallcom.2019.01.372.

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10

Rüdiger, Marc, Stefan Fischer, Judith Frank, Aruna Ivaturi, Bryce S. Richards, Karl W. Krämer, Martin Hermle i Jan Christoph Goldschmidt. "Bifacial n-type silicon solar cells for upconversion applications". Solar Energy Materials and Solar Cells 128 (wrzesień 2014): 57–68. http://dx.doi.org/10.1016/j.solmat.2014.05.014.

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11

Singha, Bandana, i Chetan S. Solanki. "N-type solar cells: advantages, issues, and current scenarios". Materials Research Express 4, nr 7 (5.07.2017): 072001. http://dx.doi.org/10.1088/2053-1591/aa6402.

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12

Schubert, Martin C., Florian Schindler, Jonas Schön, Wolfram Kwapil, Jan Benick, Ralph Müller, Friedemann D. Heinz, Andreas Fell, Stephan Riepe i Ashley Morishige. "Limiting Defects in n‐Type Multicrystalline Silicon Solar Cells". physica status solidi (a) 216, nr 17 (12.08.2019): 1900331. http://dx.doi.org/10.1002/pssa.201900331.

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13

Allen, Thomas G., James Bullock, Peiting Zheng, Ben Vaughan, Matthew Barr, Yimao Wan, Christian Samundsett, Daniel Walter, Ali Javey i Andres Cuevas. "Calcium contacts to n-type crystalline silicon solar cells". Progress in Photovoltaics: Research and Applications 25, nr 7 (17.11.2016): 636–44. http://dx.doi.org/10.1002/pip.2838.

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14

Zhang, Mingyu, i Xiaowei Zhan. "Nonfullerene n‐Type Organic Semiconductors for Perovskite Solar Cells". Advanced Energy Materials 9, nr 25 (29.05.2019): 1900860. http://dx.doi.org/10.1002/aenm.201900860.

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15

Meier, Daniel L., Vinodh Chandrasekaran, H. Preston Davis, Adam M. Payne, Xiaoyan Wang, Vijay Yelundur, Jon E. O’Neill, Young-Woo Ok, Francesco Zimbardi i Ajeet Rohatgi. "N-Type, Ion-Implanted Silicon Solar Cells and Modules". IEEE Journal of Photovoltaics 1, nr 2 (październik 2011): 123–29. http://dx.doi.org/10.1109/jphotov.2011.2169944.

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16

Benick, Jan, Armin Richter, Ralph Muller, Hubert Hauser, Frank Feldmann, Patricia Krenckel, Stephan Riepe i in. "High-Efficiency n-Type HP mc Silicon Solar Cells". IEEE Journal of Photovoltaics 7, nr 5 (wrzesień 2017): 1171–75. http://dx.doi.org/10.1109/jphotov.2017.2714139.

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17

Ye, Qing-Qing, Zhao-Kui Wang, Meng Li, Cong-Cong Zhang, Ke-Hao Hu i Liang-Sheng Liao. "N-Type Doping of Fullerenes for Planar Perovskite Solar Cells". ACS Energy Letters 3, nr 4 (14.03.2018): 875–82. http://dx.doi.org/10.1021/acsenergylett.8b00217.

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18

Santos-Cruz, J., G. Torres-Delgado, R. Castanedo-Pérez, S. Jiménez-Sandoval, J. Márquez-Marín i O. Zelaya-Angel. "Au–Cu/p–CdTe/n–CdO/glass-type solar cells". Solar Energy Materials and Solar Cells 90, nr 15 (wrzesień 2006): 2272–79. http://dx.doi.org/10.1016/j.solmat.2006.03.039.

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19

Hobson, Theodore D. C., Laurie J. Phillips, Oliver S. Hutter, Huw Shiel, Jack E. N. Swallow, Christopher N. Savory, Pabitra K. Nayak i in. "Isotype Heterojunction Solar Cells Using n-Type Sb2Se3 Thin Films". Chemistry of Materials 32, nr 6 (3.03.2020): 2621–30. http://dx.doi.org/10.1021/acs.chemmater.0c00223.

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20

He, Jianbo, Steven Hegedus, Ujjwal Das, Zhan Shu, Murray Bennett, Lei Zhang i Robert Birkmire. "Laser-fired contact for n-type crystalline Si solar cells". Progress in Photovoltaics: Research and Applications 23, nr 9 (17.06.2014): 1091–99. http://dx.doi.org/10.1002/pip.2520.

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21

Martinuzzi, S., O. Palais, M. Pasquinelli i F. Ferrazza. "N-type multicrystalline silicon wafers and rear junction solar cells". European Physical Journal Applied Physics 32, nr 3 (30.11.2005): 187–92. http://dx.doi.org/10.1051/epjap:2005085.

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22

Kiefer, F., C. Ulzhöfer, T. Brendemühl, Nils-Peter Harder, R. Brendel, V. Mertens, S. Bordihn, C. Peters i J. W. Müller. "High Efficiency N-Type Emitter-Wrap-Through Silicon Solar Cells". IEEE Journal of Photovoltaics 1, nr 1 (lipiec 2011): 49–53. http://dx.doi.org/10.1109/jphotov.2011.2164953.

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23

Peng, Zih-Wei, Po-Tsung Hsieh, Yuan-Jun Lin, Chih-Jeng Huang i Chi-Chun Li. "Investigation on Blistering Behavior for n-type Silicon Solar Cells". Energy Procedia 77 (sierpień 2015): 827–31. http://dx.doi.org/10.1016/j.egypro.2015.07.117.

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24

Stodolny, Maciej K., Gaby J. M. Janssen, Bas B. Van Aken, Kees C. J. J. Tool, Machteld W. P. E. Lamers, Ingrid G. Romijn, Peter R. Venema i in. "PID- and UVID-free n-type Solar Cells and Modules". Energy Procedia 92 (sierpień 2016): 609–16. http://dx.doi.org/10.1016/j.egypro.2016.07.026.

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25

Kumar, Praveen, Michael Pfeffer, Benjamin Willsch, Oliver Eibl, Lejo J. Koduvelikulathu, Valentin D. Mihailetchi i Radovan Kopecek. "N-type single-crystalline Si solar cells: Front side metallization for solar cells reaching 20% efficiency". Solar Energy Materials and Solar Cells 157 (grudzień 2016): 200–208. http://dx.doi.org/10.1016/j.solmat.2016.05.027.

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26

Yao, Yao, Shaoqing Xiao, Xiumei Zhang i Xiaofeng Gu. "Simulation optimizing of n-type HIT solar cells with AFORS-HET". Modern Physics Letters B 31, nr 19-21 (27.07.2017): 1740025. http://dx.doi.org/10.1142/s0217984917400255.

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This paper presents a study of heterojunction with intrinsic thin layer (HIT) solar cells based on n-type silicon substrates by a simulation software AFORS-HET. We have studied the influence of thickness, band gap of intrinsic layer and defect densities of every interface. Details in mechanisms are elaborated as well. The results show that the optimized efficiency reaches more than 23% which may give proper suggestions to practical preparation for HIT solar cells industry.

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27

Basnet, Rabin, Sieu Pheng Phang, Christian Samundsett, Di Yan, Wensheng Liang, Chang Sun, Stephane Armand, Roland Einhaus, Julien Degoulange i Daniel Macdonald. "22.6% Efficient Solar Cells with Polysilicon Passivating Contacts on n‐type Solar‐Grade Wafers". Solar RRL 3, nr 11 (sierpień 2019): 1900297. http://dx.doi.org/10.1002/solr.201900297.

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28

Jeong, Myung-Il, i Chel-Jong Choi. "Passivation property of Al2O3thin film for the application of n-type crystalline Si solar cells". Journal of the Korean Crystal Growth and Crystal Technology 24, nr 3 (30.06.2014): 106–10. http://dx.doi.org/10.6111/jkcgct.2014.24.3.106.

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29

Park, Sangwook, Eunchel Cho, Dengyuan Song, Gavin Conibeer i Martin A. Green. "n-Type silicon quantum dots and p-type crystalline silicon heteroface solar cells". Solar Energy Materials and Solar Cells 93, nr 6-7 (czerwiec 2009): 684–90. http://dx.doi.org/10.1016/j.solmat.2008.09.032.

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30

Martinuzzi, Santo, Francesca Ferrazza i Isabelle Périchaud. "Improved P-Type or Raw N-Type Multicrystalline Silicon Wafers for Solar Cells". Solid State Phenomena 108-109 (grudzień 2005): 525–30. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.525.

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31

Quan, Cheng, Hui Tong, Zhenhai Yang, Xiaoxing Ke, Mingdun Liao, Pingqi Gao, Dan Wang i in. "Electron-Selective Scandium−Tunnel Oxide Passivated Contact for n-Type Silicon Solar Cells". Solar RRL 2, nr 8 (12.06.2018): 1800071. http://dx.doi.org/10.1002/solr.201800071.

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32

SHIOKAWA, HIROKI, MASAAKI YOKOYAMA i MASAHIRO HIRAMOTO. "LONG-TERM OPERATION TESTS OF ORGANIC SOLID-STATE SOLAR CELLS". Surface Review and Letters 14, nr 04 (sierpień 2007): 539–42. http://dx.doi.org/10.1142/s0218625x07009803.

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The long-term operation tests of two types of solid-state organic photovoltaic (OPV) cells, p–n heterojunction type cells and p–i–n junction type cells, were performed. In both cells, a drastic decrease in photocurrent within 1 h was observed in air. This rapid decrease was revealed to be caused by oxygen molecules which act as a electron trap in the electron transporting organic layer. Initial decrease of photocurrent was effectively suppressed under high vacuum (10-7 Torr). In the case of a p–n type cell, the decrease in short-circuit photocurrent was only 15% even under prolonged light irradiation of 260 h.

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33

Chen, Wei-Liang, Dong-Hau Kuo i Thi Tran Anh Tuan. "CdS-Free p-Type Cu2ZnSnSe4/Sputtered n-Type In x Ga1−x N Thin Film Solar Cells". Journal of Electronic Materials 46, nr 3 (20.12.2016): 1481–87. http://dx.doi.org/10.1007/s11664-016-5184-z.

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34

Rodriguez, John, Er-Chien Wang, Ning Chen, Jian Wei Ho, Mengjie Li, Jammaal Kitz Buatis, Balaji Nagarajan i in. "Towards 22% efficient screen-printed bifacial n-type silicon solar cells". Solar Energy Materials and Solar Cells 187 (grudzień 2018): 91–96. http://dx.doi.org/10.1016/j.solmat.2018.07.020.

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35

Coletti, G., P. Manshanden, S. Bernardini, P. C. P. Bronsveld, A. Gutjahr, Z. Hu i G. Li. "Removing the effect of striations in n-type silicon solar cells". Solar Energy Materials and Solar Cells 130 (listopad 2014): 647–51. http://dx.doi.org/10.1016/j.solmat.2014.06.016.

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36

Silva, J. A., M. Gauthier, C. Boulord, C. Oliver, A. Kaminski, B. Semmache i M. Lemiti. "Progress in the metallisation of n-type multicrystalline silicon solar cells". Solar Energy Materials and Solar Cells 95, nr 12 (grudzień 2011): 3333–40. http://dx.doi.org/10.1016/j.solmat.2011.07.031.

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37

Andrew, Trisha L., i Vladimir Bulović. "Bulk Heterojuction Solar Cells Containing 6,6-Dicyanofulvenes as n-Type Additives". ACS Nano 6, nr 6 (5.06.2012): 4671–77. http://dx.doi.org/10.1021/nn301851k.

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38

Keshtov, M. L., D. V. Marochkin, V. S. Kochurov, D. Yu Parashchuk, V. P. Perevalov i A. R. Khokhlov. "Synthesis of n-type conjugated polymers for bulk heterojunction solar cells". Polymer Science Series B 54, nr 3-4 (kwiecień 2012): 183–92. http://dx.doi.org/10.1134/s1560090412030086.

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39

Hyun, Ji Yeon, Soohyun Bae, Yoon Chung Nam, Dongkyun Kang, Sang-Won Lee, Donghwan Kim, Jooyoung Park, Yoonmook Kang i Hae-Seok Lee. "Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells". Sustainability 11, nr 14 (10.07.2019): 3784. http://dx.doi.org/10.3390/su11143784.

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Al2O3/SiNx stack passivation layers are among the most popular layers used for commercial silicon solar cells. In particular, aluminum oxide has a high negative charge, while the SiNx film is known to supply hydrogen as well as impart antireflective properties. Although there are many experimental results that show that the passivation characteristics are lowered by using the stack passivation layer, the cause of the passivation is not yet understood. In this study, we investigated the passivation characteristics of Al2O3/SiNx stack layers. To identify the hydrogenation effect, we analyzed the hydrogen migration with atom probe tomography by comparing the pre-annealing and post-annealing treatments. For chemical passivation, capacitance-voltage measurements were used to confirm the negative fixed charge density due to heat treatment. Moreover, the field-effect passivation was understood by confirming changes in the Al2O3 structure using electron energy-loss spectroscopy.

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40

Schutz-Kuchly, Thomas, Sébastien Dubois, Jordi Veirman, Yannick Veschetti, Dick Heslinga i Olivier Palais. "Light-induced degradation in compensated n-type Czochralski silicon solar cells". physica status solidi (a) 208, nr 3 (14.12.2010): 572–75. http://dx.doi.org/10.1002/pssa.201000218.

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41

Ferré, Rafel, Ralf Gogolin, Jens Müller, Nils-Peter Harder i Rolf Brendel. "Laser transfer doping for contacting n-type crystalline Si solar cells". physica status solidi (a) 208, nr 8 (29.03.2011): 1964–66. http://dx.doi.org/10.1002/pssa.201127046.

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42

Genene, Zewdneh, Wendimagegn Mammo, Ergang Wang i Mats R. Andersson. "Recent Advances in n‐Type Polymers for All‐Polymer Solar Cells". Advanced Materials 31, nr 22 (21.02.2019): 1807275. http://dx.doi.org/10.1002/adma.201807275.

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43

Schmich, E., H. Lautenschlager, T. Frieß, F. Trenkle, N. Schillinger i S. Reber. "n-Type emitter epitaxy for crystalline silicon thin-film solar cells". Progress in Photovoltaics: Research and Applications 16, nr 2 (6.09.2007): 159–70. http://dx.doi.org/10.1002/pip.783.

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44

Rothhardt, Philip, Roman Keding, Andreas Wolf i Daniel Biro. "Co-diffusion from solid sources for bifacial n-type solar cells". physica status solidi (RRL) - Rapid Research Letters 7, nr 9 (1.08.2013): 623–26. http://dx.doi.org/10.1002/pssr.201308055.

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45

Benick, Jan, Oliver Schultz-Wittmann, Jonas Schön i Stefan W. Glunz. "Surface passivation schemes for high-efficiency n-type Si solar cells". physica status solidi (RRL) - Rapid Research Letters 2, nr 4 (sierpień 2008): 145–47. http://dx.doi.org/10.1002/pssr.200802124.

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LU Lin, 鲁麟, 李明潮 LI Ming-chao, 许福军 XU Fu-jun, 江明 JIANG Ming i 陈其工 CHEN Qi-gong. "n-i-p Type InGaN Solar Cells with Graded In Composition". Chinese Journal of Luminescence 37, nr 6 (2016): 682–87. http://dx.doi.org/10.3788/fgxb20163706.0682.

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47

Schindler, Florian, Jonas Schon, Bernhard Michl, Stephan Riepe, Patricia Krenckel, Jan Benick, Frank Feldmann i in. "High-Efficiency Multicrystalline Silicon Solar Cells: Potential of n-Type Doping". IEEE Journal of Photovoltaics 5, nr 6 (listopad 2015): 1571–79. http://dx.doi.org/10.1109/jphotov.2015.2466474.

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48

Ning, Zhijun, Haopeng Dong, Qiong Zhang, Oleksandr Voznyy i Edward H. Sargent. "Solar Cells Based on Inks of n-Type Colloidal Quantum Dots". ACS Nano 8, nr 10 (22.09.2014): 10321–27. http://dx.doi.org/10.1021/nn503569p.

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Le Donne, Alessia, Simona Binetti, Valerio Folegatti i Gianluca Coletti. "On the nature of striations in n-type silicon solar cells". Applied Physics Letters 109, nr 3 (18.07.2016): 033907. http://dx.doi.org/10.1063/1.4959558.

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50

Bordihn, Stefan, Verena Mertens, Janko Cieslak, Stefan Hörnlein i Jörg W. Müller. "Status of high efficiency, low cost n-type silicon solar cells". Energy Procedia 124 (wrzesień 2017): 643–48. http://dx.doi.org/10.1016/j.egypro.2017.09.262.

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