Gotowe bibliografie tematyczne / N-type solar cells

Gotowa bibliografia na temat „N-type solar cells”

Autor: Grafiati
Data publikacji: 4 czerwca 2021
Data aktualizacji: 9 lutego 2022

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Artykuły w czasopismach na temat "N-type solar cells"

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Repo, Päivikki, Jan Benick, Ville Vähänissi, Jonas Schön, Guillaume von Gastrow, Bernd Steinhauser, Martin C. Schubert, Martin Hermle i Hele Savin. "N-type Black Silicon Solar Cells". Energy Procedia 38 (2013): 866–71. http://dx.doi.org/10.1016/j.egypro.2013.07.358.

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Derbouz, A., A. Slaoui, E. Jolivet, F. de Moro i C. Belouet. "N-type silicon RST ribbon solar cells". Solar Energy Materials and Solar Cells 107 (grudzień 2012): 212–18. http://dx.doi.org/10.1016/j.solmat.2012.06.024.

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Rothhardt, Philip, Sebastian Meier, Carsten Demberger, Andreas Wolf i Daniel Biro. "Codiffused Bifacial n-type Solar Cells (CoBiN)". Energy Procedia 55 (2014): 287–94. http://dx.doi.org/10.1016/j.egypro.2014.08.084.

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Stodolny, M. K., M. Lenes, Y. Wu, G. J. M. Janssen, I. G. Romijn, J. R. M. Luchies i L. J. Geerligs. "n-Type polysilicon passivating contact for industrial bifacial n-type solar cells". Solar Energy Materials and Solar Cells 158 (grudzień 2016): 24–28. http://dx.doi.org/10.1016/j.solmat.2016.06.034.

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Silva, J. A., M. Gauthier, C. Boulord, C. Oliver, A. Kaminski, B. Semmache i M. Lemiti. "Improving front contacts of n-type solar cells". Energy Procedia 8 (2011): 625–34. http://dx.doi.org/10.1016/j.egypro.2011.06.193.

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Meier, Sebastian, Stefan Maier, Carsten Demberger, Andreas Wolf, Daniel Biro i Stefan W. Glunz. "Fast Co-Diffusion Process for Bifacial n-Type Solar Cells". Solar RRL 1, nr 1 (21.11.2016): 1600005. http://dx.doi.org/10.1002/solr.201600005.

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Yang, Xing, Jiangtao Bian, Zhengxin Liu, Shuai Li, Chao Chen i Song He. "HIT Solar Cells with N-Type Low-Cost Metallurgical Si". Advances in OptoElectronics 2018 (18.01.2018): 1–5. http://dx.doi.org/10.1155/2018/7368175.

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A conversion efficiency of 20.23% of heterojunction with intrinsic thin layer (HIT) solar cell on 156 mm × 156 mm metallurgical Si wafer has been obtained. Applying AFORS-HET software simulation, HIT solar cell with metallurgical Si was investigated with regard to impurity concentration, compensation level, and their impacts on cell performance. It is known that a small amount of impurity in metallurgical Si materials is not harmful to solar cell properties.
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Ferrada, Pablo, Dominik Rudolph, Carlos Portillo, Adrian Adrian, Jonathan Correa‐Puerta, Rodrigo Sierpe, Valeria Campo i in. "Interface analysis of Ag/n‐type Si contacts in n‐type PERT solar cells". Progress in Photovoltaics: Research and Applications 28, nr 5 (3.02.2020): 358–71. http://dx.doi.org/10.1002/pip.3242.

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Kim, Sung, Seung Hyun Shin i Suk-Ho Choi. "N-i-p-type perovskite solar cells employing n-type graphene transparent conductive electrodes". Journal of Alloys and Compounds 786 (maj 2019): 614–20. http://dx.doi.org/10.1016/j.jallcom.2019.01.372.

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Rüdiger, Marc, Stefan Fischer, Judith Frank, Aruna Ivaturi, Bryce S. Richards, Karl W. Krämer, Martin Hermle i Jan Christoph Goldschmidt. "Bifacial n-type silicon solar cells for upconversion applications". Solar Energy Materials and Solar Cells 128 (wrzesień 2014): 57–68. http://dx.doi.org/10.1016/j.solmat.2014.05.014.

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Rozprawy doktorskie na temat "N-type solar cells"

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Chen, Wan Lam Florence Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "PECVD silicon nitride for n-type silicon solar cells". Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2008. http://handle.unsw.edu.au/1959.4/41277.

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The cost of crystalline silicon solar cells must be reduced in order for photovoltaics to be widely accepted as an economically viable means of electricity generation and be used on a larger scale across the world. There are several ways to achieve cost reduction, such as using thinner silicon substrates, lowering the thermal budget of the processes, and improving the efficiency of solar cells. This thesis examines the use of plasma enhanced chemical vapour deposited silicon nitride to address the criteria of cost reduction for n-type crystalline silicon solar cells. It focuses on the surface passivation quality of silicon nitride on n-type silicon, and injection-level dependent lifetime data is used extensively in this thesis to evaluate the surface passivation quality of the silicon nitride films. The thesis covers several aspects, spanning from characterisation and modelling, to process development, to device integration. The thesis begins with a review on the advantages of using n-type silicon for solar cells applications, with some recent efficiency results on n-type silicon solar cells and a review on various interdigitated backside contact structures, and key results of surface passivation for n-type silicon solar cells. It then presents an analysis of the influence of various parasitic effects on lifetime data, highlighting how these parasitic effects could affect the results of experiments that use lifetime data extensively. A plasma enhanced chemical vapour deposition process for depositing silicon nitride films is developed to passivate both diffused and non-diffused surfaces for n-type silicon solar cells application. Photoluminescence imaging, lifetime measurements, and optical microscopy are used to assess the quality of the silicon nitride films. An open circuit voltage of 719 mV is measured on an n-type, 1 Ω.cm, FZ, voltage test structure that has direct passivation by silicon nitride. Dark saturation current densities of 5 to 15 fA/cm2 are achieved on SiN-passivated boron emitters that have sheet resistances ranging from 60 to 240 Ω/□ after thermal annealing. Using the process developed, a more profound study on surface passivation by silicon nitride is conducted, where the relationship between the surface passivation quality and the film composition is investigated. It is demonstrated that the silicon-nitrogen bond density is an important parameter to achieve good surface pas-sivation and thermal stability. With the developed process and deeper understanding on the surface passivation of silicon nitride, attempts of integrating the process into the fab-rication of all-SiN passivated n-type IBC solar cells and laser doped n-type IBC solar cells are presented. Some of the limitations, inter-relationships, requirements, and challenges of novel integration of SiN into these solar cell devices are identified. Finally, a novel metallisation scheme that takes advantages of the different etching and electroless plating properties of different PECVD SiN films is described, and a preliminary evalua-tion is presented. This metallisation scheme increases the metal finger width without increasing the metal contact area with the underlying silicon, and also enables optimal distance between point contacts for point contact solar cells. It is concluded in this thesis that plasma enhanced chemical vapour deposited silicon nitride is well-suited for n-type silicon solar cells.
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Ning, Steven. "Simulation and process development for ion-implanted N-type silicon solar cells". Thesis, Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/47684.

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As the efficiency potential for the industrial P-type Al-BSF silicon solar cell reaches its limit, new solar cell technologies are required to continue the pursuit of higher efficiency solar power at lower cost. It has been demonstrated in literature that among possible alternative solar cell structures, cells featuring a local BSF (LBSF) have demonstrated some of the highest efficiencies seen to date. Implementation of this technology in industry, however, has been limited due to the cost involved in implementing the photolithography procedures required. Recent advances in solar cell doping techniques, however, have identified ion implantation as a possible means of performing the patterned doping required without the need for photolithography. In addition, past studies have examined the potential for building solar cells on N-type silicon substrates, as opposed to P-type. Among other advantages, it is possible to create N-type solar cells which do not suffer from the efficiency degradation under light exposure that boron-doped P-type solar cells are subject to. Industry has not been able to capitalize on this potential for improved solar cell efficiency, in part because the fabrication of an N-type solar cell requires additional masking and doping steps compared to the P-type solar cell process. Again, however, recent advances in ion implantation for solar cells have demonstrated the possibility for bypassing these process limitations, fabricating high efficiency N-type cells without any masking steps. It is clear that there is potential for ion implantation to revolutionize solar cell manufacturing, but it is uncertain what absolute efficiency gains may be achieved by moving to such a process. In addition to development of a solar specific ion implant process, a number of new thermal processes must be developed as well. With so many parameters to optimize, it is highly beneficial to have an advanced simulation model which can describe the ion implant, thermal processes, and cell performance accurately. Toward this goal, the current study develops a process and device simulation model in the Sentaurus TCAD framework, and calibrates this model to experimentally measured cells. The study focuses on three main tasks in this regard: Task I - Implant and Anneal Model Development and Validation This study examines the literature in solar and microelectronics research to identify features of ion implant and anneal processes which are pertinent to solar cell processing. It is found that the Monte Carlo ion implant models used in IC fabrication optimization are applicable to solar cell manufacture, with adjustments made to accommodate for the fact that solar cell wafers are often pyramidally textured instead of polished. For modeling the thermal anneal processes required after ion implant, it is found that the boron and phosphorus cases need to be treated separately, with their own diffusion models. In particular, boron anneal simulation requires accurate treatment of boron-interstitial clusters (BICs), transient enhanced diffusion, and dose loss. Phosphorus anneal simulation requires treatment of vacancy and interstitial mediated diffusion, as well as dose loss and segregation. The required models are implemented in the Sentaurus AdvancedModels package, which is used in this study. The simulation is compared to both results presented in literature and physical measurements obtained on wafers implanted at the UCEP. It is found that good experimental agreement may be obtained for sheet resistance simulations of implanted wafers, as well as simulations of boron doping profile shape. The doping profiles of phosphorus as measured by the ECV method, however, contain inconsistencies with measured sheet resistance values which are not explained by the model. Task II - Device Simulation Development and Calibration This study also develops a 3D model for simulation of an N-type LBSF solar cell structure. The 3D structure is parametrized in terms of LBSF dot width and pitch, and an algorithm is used to generate an LBSF structure mesh with this parametrization. Doping profiles generated by simulations in Task I are integrated into the solar cell structure. Boundary conditions and free electrical parameters are calibrated using data from similar solar cells fabricated at the UCEP, as well as data from lifetime test wafers. This simulation uses electrical models recommended in literature for solar cell simulation. It is demonstrated that the 3D solar cell model developed for this study accurately reproduces the performance of an implanted N-type full BSF solar cell, and all parameters fall within ranges expected from theoretical calculations. The model is then used to explore the parameter space for implanted N-type local BSF solar cells, and to determine conditions for optimal solar cell performance. It is found that adding an LBSF to the otherwise unchanged baseline N-type cell structure can produce almost 1% absolute efficiency gain. An optimum LBSF dot pitch of 450um at a dot size of 100um was identified through simulation. The model also reveals that an LBSF structure can reduce the fill factor of the solar cell, but this effect can be offset by a gain in Voc. Further efficiency improvements may be realized by implementing a doping-dependent SRV model and by optimizing the implant dose and thermal anneal. Task III - Development of a Procedure for Ion Implanted N-type LBSF Cell Fabrication Finally, this study explores a method for fabrication of ion-implanted N-type LBSF solar cells which makes use of photolithographically defined nitride masks to perform local phosphorus implantation. The process utilizes implant, anneal, and metallization steps previously developed at the UCEP, as well as new implant masking steps developed in the course of this study. Although an LBSF solar cell has not been completely fabricated, the remaining steps of the process are successfully tested on implanted N-type full BSF solar cells, with efficiencies reaching 20.0%.
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He, Yinghui. "Novel N-type Π-conjugated Polymers for all-polymer solar cells". Thesis, Bordeaux, 2017. http://www.theses.fr/2017BORD0651/document.

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Les cellules solaires organiques (OSC) apparaissent comme une technologie prometteuse pour les énergies renouvelables en raison de leur poids léger, leur grande flexibilité et leur processus de fabrication peu coûteux. Jusqu'à présent, la plupart des OPV ont utilisé des dérivés de Fullerene, tels que PCBM ou PC71BM, en tant qu'accepteur d'électrons dans la couche active, qui s'est avéré être un goulet d'étranglement pour cette technologie. Par conséquent, le développement d'accepteurs non-fullerene est devenu la nouvelle force motrice de ce domaine. Les cellules solaires tout-polymères (tous-PSC) qui ont les avantages de la robustesse, de la stabilité et de l'accessibilité ont déjà atteint PCE jusqu'à 9%. Ainsi, le développement de nouveaux matériaux accepteurs est impératif pour améliorer les performances de tous les PSC
Organic solar cells (OSCs) appear as a promising technology for renewable energy owing to their light weight, great flexibility and low-cost fabrication process. So far most of the OPV shave been using fullerene derivatives, such as PCBM or PC71BM, as the electron acceptor in the active layer, which have been proven to a bottleneck for this technology. Therefore,developing non-fullerene acceptors has become the new driving force for this field. All-polymer solar cells (all-PSCs) that have the advantages of robustness, stability and tunability have already achieved PCE up to 9%. Thus, developing novel acceptor materials is imperative for improving the performance of all-PSCs
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Edwards, Matthew Bruce ARC Centre of Excellence in Advanced Silicon Photovoltaics &amp Photonics Faculty of Engineering UNSW. "Screen and stencil print technologies for industrial N-type silicon solar cells". Publisher:University of New South Wales. ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, 2008. http://handle.unsw.edu.au/1959.4/41372.

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To ensure that photovoltaics contributes significantly to future world energy production, the cost per watt of producing solar cells needs to be drastically reduced. The use of n-type silicon wafers in conjunction with industrial print technology has the potential to lower the cost per watt of solar cells. The use of n-type silicon is expected to allow the use of cheaper Cz substrates, without a corresponding loss in device efficiency. Printed metallisation is well utilised by the PV industry due to its low cost, yet there are few examples of its application to n-type solar cells. This thesis explores the use of n-type Cz silicon with printed metallisation and diffusion from printed sources in creating industrially applicable solar cell structures. The thesis begins with an overview of existing n-type solar cell structures, previous printed thick film metallisation research and previous research into printed dopant sources. A study of printed thick-film metallisation for n-type solar cells is then presented, which details the fabrication of boron doped p-type emitters followed by a survey of thick film Ag, Al, and Ag/Al inks for making contact to a p-emitter layer. Drawbacks of the various inks include high contact resistance, low metal conductivity or both. A cofire regime for front and rear contacts is established and an optimal emitter selected. A study of printed dopant pastes is presented, with an objective to achieve selective, heavily doped regions under metal contacts without significantly compromising minority carrier lifetime in solar cells. It is found that heavily doped regions are achievable with both boron and phosphorus, but that only phosphorus paste was capable of post-processing lifetime compatible with good efficiencies. The effect of belt furnace processing on n-type silicon wafers is explored, with large losses in implied voltage observed due to contamination of Si wafers from transition metals present in the belt furnace. Due to exposure to chromium in the belt furnace, no significant advantage in using n-type wafers instead of p-type is observed during the belt furnace processing step. Finally, working solar cells with efficiencies up to 16.1% are fabricated utilising knowledge acquired in the earlier chapters. The solar cells are characterised using several new photoluminescence techniques, including photoluminescence with current extraction to measure the quality of metal contacts. The work in this thesis indicates that n-type printed silicon solar cell technology shows potential for good performance at low cost.
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Edler, Alexander [Verfasser]. "Development of bifacial n-type solar cells for industrial application / Alexander Edler". Konstanz : Bibliothek der Universität Konstanz, 2014. http://d-nb.info/1049892887/34.

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Zhang, Jie. "Roles of the n-type oxide layer in hybrid perovskite solar cells". Thesis, Paris 6, 2015. http://www.theses.fr/2015PA066634/document.

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Le soleil offre une ressource abondante et inépuisable d’énergie. Le photovoltaïque est la technologie la plus importante pour rendre l'énergie solaire utilisable car les cellules solaires photovoltaïques recueillent le rayonnement solaire et le convertissent en énergie électrique. Les cellules solaires à colorant (DSSC) ont été très étudiées en raison de leur faible coût, d’une technique de fabrication facile et une grande versatilité. Un dispositif classique DSSC comprend une photo-anode à colorant, une contre-électrode et un électrolyte contenant un couple redox et des additifs. Pour améliorer la stabilité de ces dispositifs, le remplacement de l'électrolyte liquide par des matériaux solides transporteur de trous a été étudié pour donner ce que l’on appelle des cellules solaires à colorant solides (ssDSSCs). Récemment, les pérovskites hybrides organique/inorganiques ont été introduites dans les systèmes ssDSSCs comme absorbeur de lumière. Les cellules correspondantes, appelées cellules solaires à pérovskite (PSC) ont ouvert une nouvelle ère en photovoltaïque en raison du faible coût de ce matériau et la grande efficacité de ces cellules. L'efficacité de conversion de puissance a augmenté de 3,8% en 2009 à un rendement certifié de 20,1% fin 2014. Les composants des cellules solaires à pérovskite comprennent: une couche compacte d'oxyde jouant le rôle de barrière pour les trous photogénérés, une couche de transport des électrons (un semiconducteur de type n), la couche de l’absorbeur de lumière à base de pérovskite d’halogénure de plomb, la couche de transport des trous et le contact arrière. Dans cette thèse, nous nous sommes concentrés sur la préparation et l’amélioration des propriétés de la couche de transport d'électrons et la couche de pérovskite
Solar energy is one of the most important resources in our modern life. Photovoltaic is the most important technology to render the solar energy usable since photovoltaic solar cells harvest light coming from sun and convert sunlight into electrical energy. Dye sensitized solar cells have gained widespread attention due to their low cost, easy fabrication technique and tunable choice for the device. A traditional DSSC device includes a dye-sensitized photo-anode, a counter electrode and an electrolyte containing a redox couple system and additives. To improve the device stability, the liquid electrolyte replacement by a solid state hole transport material has been studied in so-called solid-state dye sensitized solar cells (ssDSSCs). Recently, an amazing light perovskite absorber was introduced into the ssDSSC system to replace the dye, opening the new field of research. Perovskite solar cells (PSCs) open a new era in photovoltaic due to the low cost of this material and the high efficiency of these cells. The power conversion efficiency has risen from 3.8% to a certified 20.1% within a few years. The components in the perovskite solar cell include: the compact metal oxide blocking layer, the electron transport layer, the lead halide perovskite layer, the hole transport layer and the back contact. In this thesis, we focused on the preparation and improving the properties of the electron transport layer and the perovskite layer
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Ryu, Kyung Sun. "Development of low-cost and high-efficiency commercial size n-type silicon solar cells". Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/53842.

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The objective of the research in this thesis was to develop high-efficiency n-type silicon solar cells at low-cost to reach grid parity. This was accomplished by reducing the electrical and optical losses in solar cells through understanding of fundamental physics and loss mechanisms, development of process technologies, cell design, and modeling. All these technology enhancements provided a 3.44% absolute increase in efficiency over the 17.4% efficient n-type PERT solar cell. Finally, 20.84% efficient n-type PERT (passivated emitter and rear totally diffused) solar cells were achieved on commercial grade 239cm2 n-type Cz silicon wafers with optimized front boron emitter without boron-rich layer and phosphorus back surface field, silicon dioxide/silicon nitride stack for surface passivation, optimized front grid pattern with screen printed 5 busbars and 100 gridlines, and improved rear contact with laser opening and physical vapor deposition aluminum. This thesis also suggested research directions to improve cell efficiency further and attain ≥21% efficient n-type solar cells which involves three additional technology developments including the use of floating busbars, selective emitters, and negatively charged aluminum oxide (Al2O3) film for boron emitter surface passivation.
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Frey, Alexander [Verfasser]. "Industrial n-Type Silicon Solar Cells with Co-Diffused Boron Emitters / Alexander Frey". Konstanz : Bibliothek der Universität Konstanz, 2018. http://d-nb.info/1161342966/34.

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Rothhardt, Philip [Verfasser], i Eicke [Akademischer Betreuer] Weber. "Co-diffusion for bifacial n-type solar cells = Co-Diffusion für bifaziale Solarzellen aus n-dotiertem Silizium". Freiburg : Universität, 2014. http://d-nb.info/1123481741/34.

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Benick, Jan [Verfasser]. "High-Efficiency n-Type Solar Cells with a Front Side Boron Emitter / Jan Benick". München : Verlag Dr. Hut, 2011. http://d-nb.info/1013526287/34.

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Książki na temat "N-type solar cells"

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United States. National Aeronautics and Space Administration. i Westinghouse Electric Corporation. Advanced Energy Systems Division., red. Process research of non-CZ silicon material: Quarterly report no. 5, April 1, 1985 - June 30, 1985. [Washington, D.C.?: National Aeronautics and Space Administration, 1985.

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United States. National Aeronautics and Space Administration. i Westinghouse Electric Corporation. Advanced Energy Systems Division., red. Process research of non-CZ silicon material: Quarterly report no. 5, April 1, 1985 - June 30, 1985. [Washington, D.C.?: National Aeronautics and Space Administration, 1985.

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Kong, X. Y., Y. C. Wang, X. F. Fan, G. F. Guo i L. M. Tong. Free-standing grid-like nanostructures assembled into 3D open architectures for photovoltaic devices. Redaktorzy A. V. Narlikar i Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.22.

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This article describes three-dimensional open architectures with free-standing grid-like nanostructure arrays as photocatalytic electrodes for a new type of dye-sensitized solar cell. It introduces a novel technique for fabricating a series of semiconducting oxides with grid-like nanostructures replicated from the biotemplates. These semiconducting oxides, including n-type titanium dioxide or p-type nickel oxide nanogrids, were sensitized with the dye molecules, then assembled into 3D stacked-grid arrays on a flexible substrate by means of the Langmuir–Blodgett method or the ink-jet printing technique for the photocatalytic electrodes. The article first considers the fabrication of photoelectrodes with 2D grid-like nanostructures by means of the biotemplating approach before discussing the assembly and photophysicsof grid-like nanostructures into 3D open architectures for the photocatalytic electrodes.
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Części książek na temat "N-type solar cells"

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Fu, Kunwu, Anita Wing Yi Ho-Baillie, Hemant Kumar Mulmudi i Pham Thi Thu Trang. "Organic N-Type Materials". W Perovskite Solar Cells, 139–56. Includes bibliographical references and index.: Apple Academic Press, 2019. http://dx.doi.org/10.1201/9780429469749-8.

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Zhou, Yan, Jongbok Lee i Lei Fang. "n-Type Electron-Accepting Materials for Organic Solar Cells (OSC)". W Organic and Hybrid Solar Cells, 97–119. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-10855-1_4.

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Martinuzzi, Santo, Francesca Ferrazza i Isabelle Périchaud. "Improved P-Type or Raw N-Type Multicrystalline Silicon Wafers for Solar Cells". W Solid State Phenomena, 525–30. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/3-908451-13-2.525.

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Wang, Jianqiang, Tietun Sun, Mi Wu, Hui Zhu, Jing An, Chen Tian, Dunyi Tang i in. "Optimization of Pecvd Sinx on P-Type N+ Emitter Solar Cells". W Proceedings of ISES World Congress 2007 (Vol. I – Vol. V), 1135–39. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-75997-3_224.

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Khorakiwala, Irfan M., Kurias K. Markose, Anil Kumar, Nithin Chatterji, Pradeep Nair i Aldrin Antony. "Studies on n-Type a-Si:H and the Influence of ITO Deposition Process on Silicon Heterojunction Solar Cells". W Springer Proceedings in Physics, 461–67. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_72.

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Hadj Kouider, Wafa, Abbas Belfar, Mohammed Belmekki i Hocine Ait-Kaci. "N Type Microcrystalline Silicon Oxide Layer Effect in P-I-N Ultra-Thin Film Solar Cell". W ICREEC 2019, 343–48. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5444-5_43.

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Dagher, Sawsan, Yousef Haik, Ahmad Ayesh i Nacer Tit. "Heterojunction Solar Cell Based on p-type PbS Quantum Dots and Two n-type Nanocrystals CdS and ZnO". W ICREGA’14 - Renewable Energy: Generation and Applications, 535–45. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-05708-8_43.

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Tao, Yuguo, i Ajeet Rohatgi. "High‐Efficiency Front Junction n‐Type Crystalline Silicon Solar Cells". W Nanostructured Solar Cells. InTech, 2017. http://dx.doi.org/10.5772/65023.

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"Absorber Materials for Solar Cells". W Materials for Solar Cell Technologies I, 236–58. Materials Research Forum LLC, 2021. http://dx.doi.org/10.21741/9781644901090-8.

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Solar cell production has grown rapidly in the last few decades. Essentially a solar cell (SC), known as a photovoltaic (PV) cell, is nothing more than a p-n junction, composed of a p-type and n-type semiconductor. The electric field is generated at the junction when electrons and holes pass towards the positive and negative terminals respectively. Light consists of photons, and when the light of a sufficient wavelength falls on the cells, the energy from the photon is passed to the valence band electrons, allowing electrons to move to a higher energy state called the conductive band. The entire process is carried out in the absorber layer that lies under the anti-reflective coating of the SC. Since most energy in sunlight and artificial light is within the visible range of electromagnetic radiation (EMR), a SC absorber can absorb radiation effectively at these wavelengths. Because a SC can be made using a variety of materials, its output depends solely on the properties of the material used. This chapter discusses different absorbent materials that are used for solar cells.
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Tao, Yuguo. "Screen‐Printed Front Junction n‐Type Silicon Solar Cells". W Printed Electronics - Current Trends and Applications. InTech, 2016. http://dx.doi.org/10.5772/63198.

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Streszczenia konferencji na temat "N-type solar cells"

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Chang, Jay, Hong-Long Cheng, Shyh-Jiun Liu, Szu-Yu Lin, Fu-Ching Tang, Jen-Sue Chen, Steve Lien-Chung Hsu, Yu-Jen Wang i Wei-Yang Chou. "Characteristics of organic solar cells with various cathodes and n-type organic semiconductors". W Solar Energy + Applications, redaktorzy Bolko von Roedern i Alan E. Delahoy. SPIE, 2008. http://dx.doi.org/10.1117/12.792715.

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Mohammed, Khaja H., Larry Cousar, Sergiu C. Pop i Douglas Hutchings. "Hydrogen Selective Emitter on n-type Industrial Solar Cells". W 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. http://dx.doi.org/10.1109/pvsc.2018.8548241.

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Gong, Chun, Ivan Gordon, Barry O'Sullivan, Niels E. Posthuma, Yu Qiu, Emmanuel Van Kerschaver i Jef Poortmans. "Heterojunction emitter for rear junction n-type solar cells". W 2009 34th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2009. http://dx.doi.org/10.1109/pvsc.2009.5411324.

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Abbott, M., J. Cotter i K. Fisher. "N-Type Bifacial Solar Cells with Laser Doped Contacts". W 2006 IEEE 4th World Conference on Photovoltaic Energy Conference. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279284.

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Milenkovic, Nena, Marion Driesen, Bernd Steinhauser, Jan Benick, Stefan Lindekugel, Martin Hermle, Stefan Janz i Stefan Reber. "Epitaxial N-type silicon solar cells with 20% efficiency". W 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). IEEE, 2016. http://dx.doi.org/10.1109/pvsc.2016.7749408.

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Benick, Jan, Bernd Steinhauser, Ralph Muller, Jonas Bartsch, Mathias Kamp, Andrew Mondon, Armin Richter, Martin Hermle i Stefan Glunz. "High efficiency n-type PERT and PERL solar cells". W 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6924895.

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Meier, Daniel L., Vinodh Chandrasekaran, Adam M. Payne, Sheri Wang, Ajeet Rohatgi, Young-Woo Ok, Francesco Zimbardi, Jon E. O'Neill, Cedric A. Davis i H. Preston Davis. "n-Type, ion implanted silicon solar cells and modules". W 2011 37th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2011. http://dx.doi.org/10.1109/pvsc.2011.6186657.

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Veschetti, Y., V. Sanzone, R. Cabal i N. Bateman. "N-type boron emitter solar cells with implantation industrial process". W 2011 37th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2011. http://dx.doi.org/10.1109/pvsc.2011.6186156.

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Wan, Yimao, Chris Samundsett, Teng Kho, Josephine McKeon, Lachlan Black, Daniel Macdonald, Andres Cuevas i in. "Towards industrial advanced front-junction n-type silicon solar cells". W 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925051.

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Pudasaini, Pushpa Raj, David Elam i Arturo A. Ayon. "Radial junction nanopillar arrays textured n-type silicon solar cells". W 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6744959.

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Raporty organizacyjne na temat "N-type solar cells"

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Velundur, Vijay. Road to Grid Parity through Deployment of Low-Cost 21.5% N-Type Si Solar Cells. Office of Scientific and Technical Information (OSTI), kwiecień 2017. http://dx.doi.org/10.2172/1374048.

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