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Artykuły w czasopismach na temat „N-type silicon”

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Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 15 lutego 2022

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1

Hovorka, Miloš, Filip Mika, Petr Mikulík i Lud\\v{e}k Frank. "Profiling N-Type Dopants in Silicon". MATERIALS TRANSACTIONS 51, nr 2 (2010): 237–42. http://dx.doi.org/10.2320/matertrans.mc200910.

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2

Kang, Ying, i Jacob Jorné. "Photoelectrochemical dissolution of N-type silicon". Electrochimica Acta 43, nr 16-17 (maj 1998): 2389–98. http://dx.doi.org/10.1016/s0013-4686(97)10150-5.

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3

da Silva, Wilson J., Ivo A. Hümmelgen i Regina M. Q. Mello. "Sulfonated polyaniline/n-type silicon junctions". Journal of Materials Science: Materials in Electronics 20, nr 2 (29.02.2008): 123–26. http://dx.doi.org/10.1007/s10854-008-9645-x.

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4

Repo, Päivikki, Jan Benick, Ville Vähänissi, Jonas Schön, Guillaume von Gastrow, Bernd Steinhauser, Martin C. Schubert, Martin Hermle i Hele Savin. "N-type Black Silicon Solar Cells". Energy Procedia 38 (2013): 866–71. http://dx.doi.org/10.1016/j.egypro.2013.07.358.

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5

Guyader, F., J. K. Jung, M. Guendouz, M. Sarret i P. Joubert. "n-Type Polydrystalline Silicon for Luminescent Porous Silicon Films". Solid State Phenomena 51-52 (maj 1996): 211–16. http://dx.doi.org/10.4028/www.scientific.net/ssp.51-52.211.

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6

Park, Sangwook, Eunchel Cho, Dengyuan Song, Gavin Conibeer i Martin A. Green. "n-Type silicon quantum dots and p-type crystalline silicon heteroface solar cells". Solar Energy Materials and Solar Cells 93, nr 6-7 (czerwiec 2009): 684–90. http://dx.doi.org/10.1016/j.solmat.2008.09.032.

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7

KUROKAWA, Akinari, Tetsuo SAKKA i Yukio H. OGATA. "Maskless Copper Patterning on n-Type Silicon". Journal of The Surface Finishing Society of Japan 56, nr 5 (2005): 281–85. http://dx.doi.org/10.4139/sfj.56.281.

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8

Abun Amanu, Abebaw. "Electronic Electrical Conductivity in N-type Silicon". American Journal of Physics and Applications 4, nr 1 (2016): 5. http://dx.doi.org/10.11648/j.ajpa.20160401.12.

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9

Derbouz, A., A. Slaoui, E. Jolivet, F. de Moro i C. Belouet. "N-type silicon RST ribbon solar cells". Solar Energy Materials and Solar Cells 107 (grudzień 2012): 212–18. http://dx.doi.org/10.1016/j.solmat.2012.06.024.

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10

Itoh, Masashi, Naoki Yamamoto, Kuniko Takemoto i Osamu Nittono. "Cathodoluminescence Imaging of n-Type Porous Silicon". Japanese Journal of Applied Physics 35, Part 1, No. 8 (15.08.1996): 4182–86. http://dx.doi.org/10.1143/jjap.35.4182.

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11

Cojocaru, Ala, Jürgen Carstensen, Emmanuel K. Ossei-Wusu, Malte Leisner, Oliver Riemenschneider i Helmut Föll. "Fast macropore growth in n-type silicon". physica status solidi (c) 6, nr 7 (lipiec 2009): 1571–74. http://dx.doi.org/10.1002/pssc.200881031.

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12

Scott, B. L., Ke Wang i G. Pickrell. "Fabrication of n-Type Silicon Optical Fibers". IEEE Photonics Technology Letters 21, nr 24 (grudzień 2009): 1798–800. http://dx.doi.org/10.1109/lpt.2009.2033388.

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13

Kwark, Y. H., i R. M. Swanson. "N-type SIPOS and poly-silicon emitters". Solid-State Electronics 30, nr 11 (listopad 1987): 1121–25. http://dx.doi.org/10.1016/0038-1101(87)90076-1.

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14

Awadelkarim, O. O. "Divacancies production in irradiated n-type silicon". Physica B+C 150, nr 3 (czerwiec 1988): 312–18. http://dx.doi.org/10.1016/0378-4363(88)90069-1.

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15

Humlíček, J., i K. Vojtěchovský. "Infrared optical constants of n-type silicon". Czechoslovak Journal of Physics 38, nr 9 (wrzesień 1988): 1033–49. http://dx.doi.org/10.1007/bf01597897.

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16

Tena-Zaera, R., S. Bastide i C. Lévy-Clément. "Photoelectrochemical texturization of n-type multicrystalline silicon". physica status solidi (a) 204, nr 5 (maj 2007): 1260–65. http://dx.doi.org/10.1002/pssa.200674304.

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17

HÄCKEL, S., J. DONEIT, A. PINKOWSKI i W. J. LORENZ. "DIODE CHARACTERISTICS OF YBa2Cu3O7/n- TYPE SILICON CONTACTS". Modern Physics Letters B 02, nr 11n12 (grudzień 1988): 1303–8. http://dx.doi.org/10.1142/s0217984988001284.

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The temperature dependences of diode characteristics were measured on high-T c -superconducting YBa 2 Cu 3 O 7 (polycrystalline)/n-type silicon (monocrystalline) contacts using a common two-pole-technique at low frequencies. The non-superconducting p-type semiconductor YBa 2 Cu 3 O 6.5 (polycrystalline) served as a reference substance. The temperature coefficients of the diffusion voltage, the diffusion current and the saturation current were found to be finite at T>T c , but almost zero at T≤T c . At T=78 K , the diffusion voltage of the diode YBa 2 Cu 3 O 7/n-type silicon was about 200 mV lower as compared to that of the reference diode YBa 2 Cu 3 O 6.5/n-type silicon. The observed phenomena are explained in terms of different charge carrier behavior in the superconducting ceramics above and below T c .

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18

Ikedo, Akihito, Takahiro Kawashima, Takeshi Kawano i Makoto Ishida. "Vertically aligned silicon microwire arrays of various lengths by repeated selective vapor-liquid-solid growth of n-type silicon/n-type silicon". Applied Physics Letters 95, nr 3 (20.07.2009): 033502. http://dx.doi.org/10.1063/1.3178556.

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19

Futagi, Toshiro, Takahiro Matsumoto, Masakazu Katsuno, Yasumitsu Ohta, Hidenori Mimura i Koich Kitamura. "Visible Electroluminescence from P-Type Crystalline Silicon/Porous Silicon/N-Type Microcrystalline Silicon Carbon PN Junction Diodes". Japanese Journal of Applied Physics 31, Part 2, No. 5B (15.05.1992): L616—L618. http://dx.doi.org/10.1143/jjap.31.l616.

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20

El Amrani, A., R. Si-Kaddour, M. Maoudj i C. Nasraoui. "SiN/SiO2 passivation stack of n-type silicon surface". Materials Science-Poland 37, nr 3 (1.09.2019): 482–87. http://dx.doi.org/10.2478/msp-2019-0065.

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AbstractThe SiN/SiO2 stack is widely used to passivate the surface of n-type monocrystalline silicon solar cells. In this work, we have undertaken a study to compare the stack layer obtained with SiO2 grown by both rapid thermal and chemical ways to passivate n-type monocrystalline silicon surface. By varying the plateau time and the plateau temperature of the rapid thermal oxidation, we determined the parameters to grow 10 nm thick oxide. Two-step nitric acid oxidation was used to grow 2 nm thick silicon oxide. Silicon nitride films with three refractive indices were used to produce the SiN/SiO2 stack. Regarding this parameter, the minority carrier lifetime measured by means of QSSPC revealed that the refractive index of 1.9 ensured the best passivation quality of silicon wafer surface. We also found that stacks with nitric acid oxidation showed definitely the best passivation quality. In addition to produce the most efficient passivation, this technique has the lowest thermal budget.

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21

Mohajerzadeh, S., i C. R. Selvakumar. "A novel n+-polysilicon on n-silicon iso-type diode". Canadian Journal of Physics 74, S1 (1.12.1996): 186–88. http://dx.doi.org/10.1139/p96-856.

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We report the results of fabricating n+-n iso-type diodes using in-situ phosphorus–doped polysilicon films on n-type 1 Ω cm <100> Si substrates. The electrical characteristics of this structure give evidence of the presence of an energy barrier at the film–substrate interface reminiscent of Schottky-barrier diodes. The current–voltage characteristics show exponential behavior over three decades of current. An ideality factor of 1.2 is extracted from the experimental results. An energy barrier height of about 0.2 eV is obtained from the current–temperature analysis.

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22

Behzad, Kasra, Wan Mahmood Mat Yunus, Afarin Bahrami, Alireza Kharazmi i Nayereh Soltani. "Synthesis and characterization of silicon nanorod on n-type porous silicon". Applied Optics 55, nr 9 (15.03.2016): 2143. http://dx.doi.org/10.1364/ao.55.002143.

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23

Toyama, Toshihiko, Tetsuya Suzuki, Akiyoshi Ogane, Jun Ota i Hiroaki Okamoto. "Electroreflectance study of silicon nanocrystals fabricated from n-type silicon substrate". Journal of Materials Science: Materials in Electronics 18, S1 (20.03.2007): 443–46. http://dx.doi.org/10.1007/s10854-007-9252-2.

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24

Hussein, Mohammed Jabbar, Haider Y. Hamood, Haider Mohammed Shanshool, A. S. Hasaani i M. J. Jawad. "Open photo-acoustic cell configuration for measuring the thermal diffusivity of n-type silicon and silver/n-type silicon". Journal of Materials Science: Materials in Electronics 28, nr 6 (28.11.2016): 4925–30. http://dx.doi.org/10.1007/s10854-016-6141-6.

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25

Dhar, Sukanta, Sourav Mandal, Gourab Das, Sumita Mukhopadhyay, Partha Pratim Ray, Chandan Banerjee i Asok Kumar Barua. "Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon". Japanese Journal of Applied Physics 54, nr 8S1 (18.06.2015): 08KD03. http://dx.doi.org/10.7567/jjap.54.08kd03.

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26

Wei, Wensheng, Tianmin Wang i W. Z. Shen. "Tunnelling in heterojunction of n-type hydrogenated nanocrystalline silicon film with p+-type crystal silicon". Semiconductor Science and Technology 21, nr 4 (7.03.2006): 532–39. http://dx.doi.org/10.1088/0268-1242/21/4/020.

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27

Cotter, J. E., J. H. Guo, P. J. Cousins, M. D. Abbott, F. W. Chen i K. C. Fisher. "P-Type Versus n-Type Silicon Wafers: Prospects for High-Efficiency Commercial Silicon Solar Cells". IEEE Transactions on Electron Devices 53, nr 8 (sierpień 2006): 1893–901. http://dx.doi.org/10.1109/ted.2006.878026.

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28

Fortas, G., S. Sam, Z. Fekih i N. Gabouze. "Electrodeposition of CoNiFe Alloys on n-Type Silicon". Materials Science Forum 609 (styczeń 2009): 207–12. http://dx.doi.org/10.4028/www.scientific.net/msf.609.207.

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Co, CoNi and CoFeNi layers were formed on n-type silicon by electrodeposition method from sulfate solutions. The obtained films were characterized by Cyclic Voltammetry (CV), Scanning Electron Microscopy (SEM) and Energy Dispersive Spectrometry (EDS). The results show that the morphology and the stoechiometry of CoNi and CoNiFe deposits depend on several parameters (bath composition, applied potential…). The addition of sodium acetate as complexion agent in the bath leads to the formation of highly compacted and smooth films with a good adherence to the substrate.

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29

Simoen, E., R. Loo, P. Roussel, M. Caymax, H. Bender, C. Claeys, H. J. Herzog, A. Blondeel i P. Clauws. "Defect analysis of n-type silicon strained layers". Materials Science in Semiconductor Processing 4, nr 1-3 (luty 2001): 225–27. http://dx.doi.org/10.1016/s1369-8001(00)00144-x.

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30

Gislason, H. P., S. Kristjánsson i Einar Ö. Sveinbjörnsson. "Lithium-Gold-Related Photoluminescence in n-Type Silicon". Materials Science Forum 196-201 (listopad 1995): 695–700. http://dx.doi.org/10.4028/www.scientific.net/msf.196-201.695.

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31

Mouffak, Z., H. Aourag, J. D. Moreno i J. M. Martinez-Duart. "Quantum size effect from n-type porous silicon". Microelectronic Engineering 43-44 (sierpień 1998): 655–59. http://dx.doi.org/10.1016/s0167-9317(98)00240-8.

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32

Yu, H. A., Y. Kaneko, S. Yoshimura i S. Otani. "Photovoltaic cell of carbonaceous film/n‐type silicon". Applied Physics Letters 68, nr 4 (22.01.1996): 547–49. http://dx.doi.org/10.1063/1.116395.

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33

Tao, Meng, Shruddha Agarwal, Darshak Udeshi, Nasir Basit, Eduardo Maldonado i Wiley P. Kirk. "Low Schottky barriers on n-type silicon (001)". Applied Physics Letters 83, nr 13 (29.09.2003): 2593–95. http://dx.doi.org/10.1063/1.1613357.

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34

Istratov, A. A., H. Hieslmair, C. Flink, T. Heiser i E. R. Weber. "Interstitial copper-related center in n-type silicon". Applied Physics Letters 71, nr 16 (20.10.1997): 2349–51. http://dx.doi.org/10.1063/1.120026.

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35

Takemoto, Kuniko, Yoshio Nakamura i Osamu Nittono. "Microstructure and Crystallinity of N-Type Porous Silicon". Japanese Journal of Applied Physics 33, Part 1, No. 12A (15.12.1994): 6432–36. http://dx.doi.org/10.1143/jjap.33.6432.

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36

Forster, Maxime, Bastien Dehestru, Antoine Thomas, Erwann Fourmond, Roland Einhaus, Andres Cuevas i Mustapha Lemiti. "Compensation engineering for uniform n-type silicon ingots". Solar Energy Materials and Solar Cells 111 (kwiecień 2013): 146–52. http://dx.doi.org/10.1016/j.solmat.2013.01.001.

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37

Cojocaru, Ala, Jürgen Carstensen i Helmut Föll. "Growth Modes of Macropores in n-Type Silicon". ECS Transactions 16, nr 3 (18.12.2019): 157–72. http://dx.doi.org/10.1149/1.2982552.

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38

Gaughan, K., S. Nitta, J. M. Viner, J. Hautala i P. C. Taylor. "n‐type doping of amorphous silicon using tertiarybutylphosphine". Applied Physics Letters 57, nr 20 (12.11.1990): 2121–23. http://dx.doi.org/10.1063/1.103917.

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39

Fukata, Naoki, Shin-ichi Sasaki, Kouichi Murakami, Kunie Ishioka, Masahiro Kitajima, Shuzo Fujimura i Jun Kikuchi. "Formation of Hydrogen Molecules in n-Type Silicon". Japanese Journal of Applied Physics 35, Part 2, No. 8B (15.08.1996): L1069—L1071. http://dx.doi.org/10.1143/jjap.35.l1069.

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40

Tanaka, Shuji, i Hajime Kitagawa. "Iron-Related Donor Level in N-Type Silicon". Japanese Journal of Applied Physics 34, Part 2, No. 6B (15.06.1995): L721—L723. http://dx.doi.org/10.1143/jjap.34.l721.

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41

Zhang, X. G. "Mechanism of Pore Formation on n‐Type Silicon". Journal of The Electrochemical Society 138, nr 12 (1.12.1991): 3750–56. http://dx.doi.org/10.1149/1.2085494.

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42

Londos, C. A. "Defect states in electron-bombarded n-type silicon". Physica Status Solidi (a) 113, nr 2 (16.06.1989): 503–10. http://dx.doi.org/10.1002/pssa.2211130231.

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43

Ouir, S., S. Sam, G. Fortas, N. Gabouze, K. Beldjilali i F. Tighilt. "FeNi alloys electroplated into porous (n-type) silicon". physica status solidi (c) 5, nr 12 (grudzień 2008): 3694–97. http://dx.doi.org/10.1002/pssc.200780175.

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44

Wang, C. H., K. Misiakos i A. Neugroschel. "Minority-carrier transport parameters in n-type silicon". IEEE Transactions on Electron Devices 37, nr 5 (maj 1990): 1314–22. http://dx.doi.org/10.1109/16.108194.

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45

Montero, I. "Low temperature nonilluminated anodization of n-type silicon". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 8, nr 3 (maj 1990): 544. http://dx.doi.org/10.1116/1.585017.

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46

Shishkin, Y., W. J. Choyke i R. P. Devaty. "Photoelectrochemical etching of n-type 4H silicon carbide". Journal of Applied Physics 96, nr 4 (15.08.2004): 2311–22. http://dx.doi.org/10.1063/1.1768612.

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47

Castaldini, Antonio, Daniela Cavalcoli i Anna Cavallini. "Investigation on Electrical Contacts on N-Type Silicon". Solid State Phenomena 19-20 (styczeń 1991): 529–34. http://dx.doi.org/10.4028/www.scientific.net/ssp.19-20.529.

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48

Ballarin, N., C. Carraro, R. Maboudian i L. Magagnin. "Electropolishing of n-type 3C-polycrystalline silicon carbide". Electrochemistry Communications 40 (marzec 2014): 17–19. http://dx.doi.org/10.1016/j.elecom.2013.12.018.

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49

Eddowes, M. J. "Anodic dissolution of p- and n-type silicon". Journal of Electroanalytical Chemistry and Interfacial Electrochemistry 280, nr 2 (marzec 1990): 297–311. http://dx.doi.org/10.1016/0022-0728(90)87005-5.

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50

Buchin, E. Yu, A. B. Churilov i A. V. Prokaznikov. "Different morphology aspects of n-type porous silicon". Applied Surface Science 102 (sierpień 1996): 431–35. http://dx.doi.org/10.1016/0169-4332(96)00093-1.

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