Gotowe bibliografie tematyczne / N-type silicon

Gotowa bibliografia na temat „N-type silicon”

Autor: Grafiati
Data publikacji: 4 czerwca 2021
Data aktualizacji: 15 lutego 2022

Utwórz poprawne odniesienie w stylach APA, MLA, Chicago, Harvard i wielu innych

Wybierz rodzaj źródła:

Spis treści

Zobacz listy aktualnych artykułów, książek, rozpraw, streszczeń i innych źródeł naukowych na temat „N-type silicon”.

Przycisk „Dodaj do bibliografii” jest dostępny obok każdej pracy w bibliografii. Użyj go – a my automatycznie utworzymy odniesienie bibliograficzne do wybranej pracy w stylu cytowania, którego potrzebujesz: APA, MLA, Harvard, Chicago, Vancouver itp.

Możesz również pobrać pełny tekst publikacji naukowej w formacie „.pdf” i przeczytać adnotację do pracy online, jeśli odpowiednie parametry są dostępne w metadanych.

Artykuły w czasopismach na temat "N-type silicon"

1

Hovorka, Miloš, Filip Mika, Petr Mikulík i Lud\\v{e}k Frank. "Profiling N-Type Dopants in Silicon". MATERIALS TRANSACTIONS 51, nr 2 (2010): 237–42. http://dx.doi.org/10.2320/matertrans.mc200910.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

Kang, Ying, i Jacob Jorné. "Photoelectrochemical dissolution of N-type silicon". Electrochimica Acta 43, nr 16-17 (maj 1998): 2389–98. http://dx.doi.org/10.1016/s0013-4686(97)10150-5.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
3

da Silva, Wilson J., Ivo A. Hümmelgen i Regina M. Q. Mello. "Sulfonated polyaniline/n-type silicon junctions". Journal of Materials Science: Materials in Electronics 20, nr 2 (29.02.2008): 123–26. http://dx.doi.org/10.1007/s10854-008-9645-x.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
4

Repo, Päivikki, Jan Benick, Ville Vähänissi, Jonas Schön, Guillaume von Gastrow, Bernd Steinhauser, Martin C. Schubert, Martin Hermle i Hele Savin. "N-type Black Silicon Solar Cells". Energy Procedia 38 (2013): 866–71. http://dx.doi.org/10.1016/j.egypro.2013.07.358.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

Guyader, F., J. K. Jung, M. Guendouz, M. Sarret i P. Joubert. "n-Type Polydrystalline Silicon for Luminescent Porous Silicon Films". Solid State Phenomena 51-52 (maj 1996): 211–16. http://dx.doi.org/10.4028/www.scientific.net/ssp.51-52.211.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
6

Park, Sangwook, Eunchel Cho, Dengyuan Song, Gavin Conibeer i Martin A. Green. "n-Type silicon quantum dots and p-type crystalline silicon heteroface solar cells". Solar Energy Materials and Solar Cells 93, nr 6-7 (czerwiec 2009): 684–90. http://dx.doi.org/10.1016/j.solmat.2008.09.032.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
7

KUROKAWA, Akinari, Tetsuo SAKKA i Yukio H. OGATA. "Maskless Copper Patterning on n-Type Silicon". Journal of The Surface Finishing Society of Japan 56, nr 5 (2005): 281–85. http://dx.doi.org/10.4139/sfj.56.281.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Abun Amanu, Abebaw. "Electronic Electrical Conductivity in N-type Silicon". American Journal of Physics and Applications 4, nr 1 (2016): 5. http://dx.doi.org/10.11648/j.ajpa.20160401.12.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

Derbouz, A., A. Slaoui, E. Jolivet, F. de Moro i C. Belouet. "N-type silicon RST ribbon solar cells". Solar Energy Materials and Solar Cells 107 (grudzień 2012): 212–18. http://dx.doi.org/10.1016/j.solmat.2012.06.024.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
10

Itoh, Masashi, Naoki Yamamoto, Kuniko Takemoto i Osamu Nittono. "Cathodoluminescence Imaging of n-Type Porous Silicon". Japanese Journal of Applied Physics 35, Part 1, No. 8 (15.08.1996): 4182–86. http://dx.doi.org/10.1143/jjap.35.4182.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
Więcej źródeł

Rozprawy doktorskie na temat "N-type silicon"

1

Porter, Nicholas Andrew. "Magnetoresistance in n-type silicon". Thesis, University of Leeds, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.534834.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

Chen, Wan Lam Florence Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. "PECVD silicon nitride for n-type silicon solar cells". Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2008. http://handle.unsw.edu.au/1959.4/41277.

Pełny tekst źródła
Streszczenie:
The cost of crystalline silicon solar cells must be reduced in order for photovoltaics to be widely accepted as an economically viable means of electricity generation and be used on a larger scale across the world. There are several ways to achieve cost reduction, such as using thinner silicon substrates, lowering the thermal budget of the processes, and improving the efficiency of solar cells. This thesis examines the use of plasma enhanced chemical vapour deposited silicon nitride to address the criteria of cost reduction for n-type crystalline silicon solar cells. It focuses on the surface passivation quality of silicon nitride on n-type silicon, and injection-level dependent lifetime data is used extensively in this thesis to evaluate the surface passivation quality of the silicon nitride films. The thesis covers several aspects, spanning from characterisation and modelling, to process development, to device integration. The thesis begins with a review on the advantages of using n-type silicon for solar cells applications, with some recent efficiency results on n-type silicon solar cells and a review on various interdigitated backside contact structures, and key results of surface passivation for n-type silicon solar cells. It then presents an analysis of the influence of various parasitic effects on lifetime data, highlighting how these parasitic effects could affect the results of experiments that use lifetime data extensively. A plasma enhanced chemical vapour deposition process for depositing silicon nitride films is developed to passivate both diffused and non-diffused surfaces for n-type silicon solar cells application. Photoluminescence imaging, lifetime measurements, and optical microscopy are used to assess the quality of the silicon nitride films. An open circuit voltage of 719 mV is measured on an n-type, 1 Ω.cm, FZ, voltage test structure that has direct passivation by silicon nitride. Dark saturation current densities of 5 to 15 fA/cm2 are achieved on SiN-passivated boron emitters that have sheet resistances ranging from 60 to 240 Ω/□ after thermal annealing. Using the process developed, a more profound study on surface passivation by silicon nitride is conducted, where the relationship between the surface passivation quality and the film composition is investigated. It is demonstrated that the silicon-nitrogen bond density is an important parameter to achieve good surface pas-sivation and thermal stability. With the developed process and deeper understanding on the surface passivation of silicon nitride, attempts of integrating the process into the fab-rication of all-SiN passivated n-type IBC solar cells and laser doped n-type IBC solar cells are presented. Some of the limitations, inter-relationships, requirements, and challenges of novel integration of SiN into these solar cell devices are identified. Finally, a novel metallisation scheme that takes advantages of the different etching and electroless plating properties of different PECVD SiN films is described, and a preliminary evalua-tion is presented. This metallisation scheme increases the metal finger width without increasing the metal contact area with the underlying silicon, and also enables optimal distance between point contacts for point contact solar cells. It is concluded in this thesis that plasma enhanced chemical vapour deposited silicon nitride is well-suited for n-type silicon solar cells.
Style APA, Harvard, Vancouver, ISO itp.
3

Scansen, Donald W. "Excess noise in n-type hydrogenated amorphous silicon". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/nq23898.pdf.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
4

Valavanis, Alexander. "n-type silicon-germanium based terahertz quantum cascade lasers". Thesis, University of Leeds, 2009. http://etheses.whiterose.ac.uk/1262/.

Pełny tekst źródła
Streszczenie:
Terahertz quantum cascade lasers (THz QCLs) have many potential applications, including detection of skin tumours, and of illicit drugs and explosives. To date, all THz QCLs use III–V compound semiconductors, but silicon (Si)-based devices could offer significant benefits. The high thermal conductivity of Si may allow higher operating temperatures, removing the need for large and costly cryogenic coolers, and the non-polar nature of Si may allow a wider range of emission frequencies. The mature Si processing technology may reduce fabrication costs and ultimately allow integration of THz QCLs with mainstream semiconductor electronics. This work investigates the suitability of a range of Si-based material configurations for THz QCL design. An effective mass/envelope function model of the electronic bandstructure is developed, taking into account the effects of strain and crystal orientation. Scattering models for Coulombic interactions, structural imperfections and interactions with phonons (lattice vibrations) are developed and used to predict the electron distribution, current density and gain in a range of device designs. The effect of nonabrupt interface geometries is investigated and the effect of intervalley mixing upon the emission spectrum is considered. It is shown that germanium/germanium–silicon heterostructures offer much better prospects for THz QCL development than silicon/silicon–germanium systems and can yield sufficient optical gain to overcome the threshold for copper–copper waveguides.
Style APA, Harvard, Vancouver, ISO itp.
5

Merazga, Amar. "Steady state and transient photoconductivity in n-type amorphous silicon". Thesis, University of Abertay Dundee, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.277887.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
6

Edwards, Matthew Bruce ARC Centre of Excellence in Advanced Silicon Photovoltaics &amp Photonics Faculty of Engineering UNSW. "Screen and stencil print technologies for industrial N-type silicon solar cells". Publisher:University of New South Wales. ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, 2008. http://handle.unsw.edu.au/1959.4/41372.

Pełny tekst źródła
Streszczenie:
To ensure that photovoltaics contributes significantly to future world energy production, the cost per watt of producing solar cells needs to be drastically reduced. The use of n-type silicon wafers in conjunction with industrial print technology has the potential to lower the cost per watt of solar cells. The use of n-type silicon is expected to allow the use of cheaper Cz substrates, without a corresponding loss in device efficiency. Printed metallisation is well utilised by the PV industry due to its low cost, yet there are few examples of its application to n-type solar cells. This thesis explores the use of n-type Cz silicon with printed metallisation and diffusion from printed sources in creating industrially applicable solar cell structures. The thesis begins with an overview of existing n-type solar cell structures, previous printed thick film metallisation research and previous research into printed dopant sources. A study of printed thick-film metallisation for n-type solar cells is then presented, which details the fabrication of boron doped p-type emitters followed by a survey of thick film Ag, Al, and Ag/Al inks for making contact to a p-emitter layer. Drawbacks of the various inks include high contact resistance, low metal conductivity or both. A cofire regime for front and rear contacts is established and an optimal emitter selected. A study of printed dopant pastes is presented, with an objective to achieve selective, heavily doped regions under metal contacts without significantly compromising minority carrier lifetime in solar cells. It is found that heavily doped regions are achievable with both boron and phosphorus, but that only phosphorus paste was capable of post-processing lifetime compatible with good efficiencies. The effect of belt furnace processing on n-type silicon wafers is explored, with large losses in implied voltage observed due to contamination of Si wafers from transition metals present in the belt furnace. Due to exposure to chromium in the belt furnace, no significant advantage in using n-type wafers instead of p-type is observed during the belt furnace processing step. Finally, working solar cells with efficiencies up to 16.1% are fabricated utilising knowledge acquired in the earlier chapters. The solar cells are characterised using several new photoluminescence techniques, including photoluminescence with current extraction to measure the quality of metal contacts. The work in this thesis indicates that n-type printed silicon solar cell technology shows potential for good performance at low cost.
Style APA, Harvard, Vancouver, ISO itp.
7

Lam, Chi-hung, i 林志雄. "Defect study of N-type 6H silicon carbide using positron lifetime spectroscopy". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B29753260.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Lam, Chi-hung. "Positron annihilation spectroscopy studies of 6H N-type silicon carbide and Zn-doped P-type gallium antimonide". Click to view the E-thesis via HKUTO, 2005. http://sunzi.lib.hku.hk/hkuto/record/B36299996.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

Ryu, Kyung Sun. "Development of low-cost and high-efficiency commercial size n-type silicon solar cells". Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/53842.

Pełny tekst źródła
Streszczenie:
The objective of the research in this thesis was to develop high-efficiency n-type silicon solar cells at low-cost to reach grid parity. This was accomplished by reducing the electrical and optical losses in solar cells through understanding of fundamental physics and loss mechanisms, development of process technologies, cell design, and modeling. All these technology enhancements provided a 3.44% absolute increase in efficiency over the 17.4% efficient n-type PERT solar cell. Finally, 20.84% efficient n-type PERT (passivated emitter and rear totally diffused) solar cells were achieved on commercial grade 239cm2 n-type Cz silicon wafers with optimized front boron emitter without boron-rich layer and phosphorus back surface field, silicon dioxide/silicon nitride stack for surface passivation, optimized front grid pattern with screen printed 5 busbars and 100 gridlines, and improved rear contact with laser opening and physical vapor deposition aluminum. This thesis also suggested research directions to improve cell efficiency further and attain ≥21% efficient n-type solar cells which involves three additional technology developments including the use of floating busbars, selective emitters, and negatively charged aluminum oxide (Al2O3) film for boron emitter surface passivation.
Style APA, Harvard, Vancouver, ISO itp.
10

Ho, King-fung, i 何競豐. "Some positron annihilation studies on highly doped and supersaturated N-type silicon". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B30287108.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
Więcej źródeł

Książki na temat "N-type silicon"

1

United States. National Aeronautics and Space Administration., red. Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers. [Washington, DC: National Aeronautics and Space Administration, 1995.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

United States. National Aeronautics and Space Administration., red. Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers. [Washington, DC: National Aeronautics and Space Administration, 1995.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
3

United States. National Aeronautics and Space Administration., red. Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers. [Washington, DC: National Aeronautics and Space Administration, 1995.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
4

United States. National Aeronautics and Space Administration., red. Site-competition epitaxy for n-type and p-type dopant control in CVD SiC epilayers. [Washington, DC: National Aeronautics and Space Administration, 1995.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

Park, Jae Hyun. Interfacial reactions in nickel/titanium ohmic contacts to n-type silicon carbide. 2003.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
6

United States. National Aeronautics and Space Administration., red. Electrical characterization of 6H crystalline silicon carbide. [Washington, D.C: National Aeronautics and Space Administration, 1994.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
7

United States. National Aeronautics and Space Administration., red. Electrical characterization of 6H crystalline silicon carbide. [Washington, D.C: National Aeronautics and Space Administration, 1994.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Stockmeier, Ludwig. Heavily N-Type Doped Silicon and the Dislocation Formation During Its Growth by the Czochralski Method. Fraunhofer IRB Verlag, 2018.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

United States. National Aeronautics and Space Administration. i Westinghouse Electric Corporation. Advanced Energy Systems Division., red. Process research of non-CZ silicon material: Quarterly report no. 5, April 1, 1985 - June 30, 1985. [Washington, D.C.?: National Aeronautics and Space Administration, 1985.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
10

United States. National Aeronautics and Space Administration. i Westinghouse Electric Corporation. Advanced Energy Systems Division., red. Process research of non-CZ silicon material: Quarterly report no. 5, April 1, 1985 - June 30, 1985. [Washington, D.C.?: National Aeronautics and Space Administration, 1985.

Znajdź pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.

Części książek na temat "N-type silicon"

1

Ke, Y., R. P. Devaty i W. J. Choyke. "Comparative Columnar Porous Etching Studies on n-Type 6H SiC Crystalline Faces". W Silicon Carbide, 395–409. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629053.ch16.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

Pensl, Gerhard, Svetlana Beljakowa, Thomas Frank, Kunyuan Gao, Florian Speck, Thomas Seyller, Lothar Ley i in. "Alternative Techniques to Reduce Interface Traps in n-Type 4H-SiC MOS Capacitors". W Silicon Carbide, 193–214. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629077.ch8.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
3

Ke, Yue, Fei Yan, Robert P. Devaty i W. J. Choyke. "Columnar Pore Growth in n-Type 6H SiC". W Silicon Carbide and Related Materials 2005, 739–42. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.739.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
4

Castaldini, A., D. Cavalcoli i A. Cavallini. "On the Dirty Contacts on N-Type Silicon". W Crucial Issues in Semiconductor Materials and Processing Technologies, 135–39. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2714-1_13.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

Levy-Clement, C. "Characteristics of porous n-type silicon obtained by photoelectrochemical etching". W Porous Silicon Science and Technology, 329–44. Berlin, Heidelberg: Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-662-03120-9_20.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
6

Wellmann, Peter J., Desirée Queren, Ralf Müller, Sakwe Aloysius Sakwe i Ulrike Künecke. "Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC". W Silicon Carbide and Related Materials 2005, 79–82. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.79.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
7

Rauls, E., U. Gerstmann, S. Greulich-Weber, Kurt Semmelroth, Gerhard Pensl i Eugene E. Haller. "New Aspects in n-type Doping of SiC with Phosphorus". W Silicon Carbide and Related Materials 2005, 609–12. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.609.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Huang, W., T. Khan i T. P. Chow. "Asymmetric Interface Densities on n and p Type GaN MOS Capacitors". W Silicon Carbide and Related Materials 2005, 1525–28. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1525.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

Pinheiro, M. V. B., E. Rauls, U. Gerstmann, S. Greulich-Weber, Johann Martin Spaeth i Harald Overhof. "Carbon Related Split-Interstitials in Electron-Irradiated n-type 6H-SiC". W Silicon Carbide and Related Materials 2005, 551–54. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.551.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
10

Ewing, D. J., Qamar-ul Wahab, Sergey P. Tumakha, Leonard J. Brillson, X. Y. Ma, Tangali S. Sudarshan i L. M. Porter. "A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC". W Silicon Carbide and Related Materials 2005, 911–14. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.911.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.

Streszczenia konferencji na temat "N-type silicon"

1

Yang, Seungwon, Younghwan Son, Sung Dae Suk, Dong-Won Kim, Donggun Park, Kyungseok Oh i Hyungcheol Shin. "Flicker noise in N-type and P-type silicon nanowire transistors". W 2008 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2008. http://dx.doi.org/10.1109/snw.2008.5418460.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
2

Bessette, Jonathan T., Rodolfo Camacho-Aguilera, Yan Cai, Lionel C. Kimerling i Jurgen Michel. "High n-type Doping for Ge Lasers". W Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2011. http://dx.doi.org/10.1364/iprsn.2011.ituc5.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
3

Gemmel, Catherin, Jan Hensen, Nils Folchert, Felix Haase, Robby Peibst, Sarah Kajari-Schröder i Rolf Brendel. "9 ms carrier lifetime in kerfless epitaxial wafers by n-type POLO gettering". W SILICONPV 2018, THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. Author(s), 2018. http://dx.doi.org/10.1063/1.5049324.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
4

Huang, Shaoyun, Maki Shimizu, Naoki Fukata, Takashi Sekiguchi, Tomohiro Yamaguchi i Koji Ishibashi. "An n-type silicon nanowire dot based single-electron transistor". W 2008 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2008. http://dx.doi.org/10.1109/snw.2008.5418430.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
5

Cai, Yan, Rodolfo Camacho-Aguilera, Jonathan T. Bessette, Lionel C. Kimerling i Jurgen Michel. "High n-type doped germanium for electrically pumped Ge laser". W Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2012. http://dx.doi.org/10.1364/iprsn.2012.im3a.5.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
6

Comparotto, Corrado, Jan Lossen i Valentin D. Mihailetchi. "Bifacial screen-printed n-type passivated emitter rear totally diffused rear junction solar cells". W SILICONPV 2018, THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. Author(s), 2018. http://dx.doi.org/10.1063/1.5049308.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
7

Halpin, John, Maksym Myronov, Stephen Rhead i David R. Leadley. "N-type SiGe/Ge superlattice structures for terahertz emission". W 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM). IEEE, 2014. http://dx.doi.org/10.1109/istdm.2014.6874635.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
8

Yang, Seungwon, Kyoung Hwan Yeo, Dong-Won Kim, Kang-ill Seo, Donggun Park, Gyoyoung Jin, KyungSeok Oh i Hyungcheol Shin. "Random Telegraph Noise in n-type and p-type silicon nanowire transistors". W 2008 IEEE International Electron Devices Meeting (IEDM). IEEE, 2008. http://dx.doi.org/10.1109/iedm.2008.4796809.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
9

Bivour, Martin, Christoph Meinhardt, Damian Pysch, Christian Reichel, K. U. Ritzau, Martin Hermle i Stefan W. Glunz. "n-type silicon solar cells with amorphous/crystalline silicon heterojunction rear emitter". W 2010 35th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2010. http://dx.doi.org/10.1109/pvsc.2010.5614252.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
10

Dhamrin, M., A. Uzum, T. Saitoh, I. Yamaga i K. Kamisako. "Growth of n-type multicrystalline silicon ingots from recycled CZ silicon feedstock". W 2008 33rd IEEE Photovolatic Specialists Conference (PVSC). IEEE, 2008. http://dx.doi.org/10.1109/pvsc.2008.4922784.

Pełny tekst źródła
Style APA, Harvard, Vancouver, ISO itp.
Możesz być także zainteresowany rozszerzonymi bibliografiami na temat „N-type silicon” dla poszczególnych typów źródeł:
Artykuły w czasopismach Rozprawy doktorskie
Oferujemy zniżki na wszystkie plany premium dla autorów, których prace zostały uwzględnione w tematycznych zestawieniach literatury. Skontaktuj się z nami, aby uzyskać unikalny kod promocyjny!

Do bibliografii