Rozprawy doktorskie na temat „Multiferroic Oxides - Dielectric Properties”

There is great interest in the development of new polar dielectric ceramics and multiferroic materials with new and improved properties. A family of tetragonal tungsten bronze (TTB) relaxors of composition Ba₆M³⁺Nb₉O₃₀ (M³⁺ = Ga³⁺, Sc³⁺ and In³⁺, and also their solid solutions) were studied in an attempt to understand their dielectric properties to enable design of novel polar TTB materials. A combination of electrical measurements (dielectric and impedance spectroscopy) and powder diffraction (X-ray and neutron) studies as a function of temperature was employed for characterising the dynamic dipole response in these materials. The effect of B-site doping on fundamental dipolar relaxation parameters were investigated by independently fitting the dielectric permittivity to the Vogel-Fulcher (VF) model, and the dielectric loss to Universal Dielectric Response (UDR) and Arrhenius models. These studies showed an increase in the characteristic dipole freezing temperature (T[subscript(f)]) with increase B-cation radius. Crystallographic data indicated a corresponding maximum in tetragonal strain at T[subscript(f)], consistent with the slowing and eventual freezing of dipoles. In addition, the B1 crystallographic site was shown to be most active in terms of the dipolar response. A more in-depth analysis of the relaxor behaviour of these materials revealed that, with the stepwise increase in the ionic radius of the M³⁺ cation on the B-site within the Sc-In solid solution series, the Vogel-Fulcher curves (lnf vs. T[subscript(m)]) are displaced to higher temperatures, while the degree of relaxor behaviour (frequency dependence) increases. Unfortunately, additional features appear in the dielectric spectroscopy data, dramatically affecting the Vogel-Fulcher fitting parameters. A parametric study of the reproducibility of acquisition and analysis of dielectric data was therefore carried out. The applicability of the Vogel-Fulcher expression to fit dielectric permittivity data was investigated, from the simple unrestricted (“free”) fit to a wider range of imposed values for the VF relaxation parameters that fit with high accuracy the experimental data. The reproducibility of the dielectric data and the relaxation parameters obtained by VF fitting were shown to be highly sensitive to the thermal history of samples and also the conditions during dielectric data acquisition (i.e., heating/cooling rate). In contrast, UDR analysis of the dielectric loss data provided far more reproducible results, and to an extent was able to partially deconvolute the additional relaxation processes present in these materials. The exact nature of these additional relaxations is not yet fully understood. It was concluded application of the Vogel-Fulcher model should be undertaken with great care. The UDR model may represent a feasible alternative to the evaluation of fundamental relaxation parameters, and a step forward towards the understanding of the dielectric processes in tetragonal tungsten bronzes.

High performance miniaturized passives are of great importance for advanced nanoelectronic packages for several applications including efficient power delivery. Low cost thin film capacitors fabricated directly on package (and/or on-chip) are an attractive approach towards realizing such devices. This thesis aims to explore fundamental frequency dependent dielectric and insulating properties of thin film high-k dielectric constant in the perovskite and perovskite-related complex oxides. Throughout this thesis, we have successfully observed the role of structure, strain and oxygen stoichiometry on the dielectric properties of thin film complex oxides, allowing a greater understanding of processing conditions and polarization mechanisms. In the first section of the thesis, we explore novel processing methods in the conventional ferroelectric, barium strontium titanate, \(Ba_{1-x}Sr_xTiO_3 (BST)\), using ultraviolet enhanced oxidation techniques in order to achieve improvements in the dielectric properties. Using this method, we also explore the growth of BST on inexpensive non-noble metals such as Ni which presents technical challenges due to the ability to oxidize at high temperatures. We observe a significant lowering of the dielectric loss while also lowering the process temperature which allows us to maintain an intimate interface between the dielectric layer and the metal electrode. The second section of this thesis explores the novel dielectric material, Lanthanum Strontium Nickelate, \(La_{2-x}Sr_xNiO_4 (LSNO)\), which exhibits a colossal dielectric response. For the first time, we report on the colossal dielectric properties of polycrystalline and epitaxial thin film LSNO. We observe a significant polarization dependence on the microstructure due to the grain/grain boundary interaction with charged carriers. We next grew epitaxial films on various insulating oxide substrates in order to decouple the grain boundary interaction. Here we observed substrate dependent dielectric properties associated with induced strain. We also observe, due to the p-type carriers in LSNO, pn junction formation when grown epitaxially on the conducting oxide degenerate n-type Nb-doped \(SrTiO_3\). Finally we explore the growth mechanism of epitaxial LSNO as a function of high oxygen content. Due to the ability for LSNO to take in interstitial oxygen, a reoriented growth is observed at a critical thickness, thereby allowing us to vary anisotropy as a function of deposition conditions.
Engineering and Applied Sciences

Studies of the radiative properties of thin films and near-field radiation transfer in layered structures are important for applications in energy, near-field imaging, coherent thermal emission, and aerospace thermal management. A comprehensive study is performed on the optical constants of dielectric tantalum pentoxide (Ta₂O₅) and hafnium oxide (HfO₂) thin films from visible to the far infrared using spectroscopic methods. These materials have broad applications in metallo-dielectric multilayers, anti-reflection coatings, and coherent emitters based on photonic crystal structures, especially at high temperatures since both materials have melting points above 2000 K. The dielectric functions of HfO₂ and Ta₂O₅ obtained from this work may facilitate future design of devices with these materials. A parametric study of near-field TPV performance using a backside reflecting mirror is also performed. Currently proposed near-field TPV devices have been shown to have increased power throughput compared to their far-field counterparts, but whose conversion efficiencies are lower than desired. This is due to their low quantum efficiency caused by recombination of minority carriers and the waste of sub-bandgap radiation. The efficiency may be improved by adding a gold mirror as well as by reducing the surface recombination velocity, as demonstrated in this thesis. The analysis of the near-field TPV and proposed methods may facilitate the development or high-efficiency energy harvesting devices. Many near-field devices may eventually utilize metallo-dielectric structures which exhibit unique properties such as negative refraction due to their hyperbolic isofrequency contour. These metamaterials are also called indefinite materials because of their ability to support propagating waves with large lateral wavevectors, which can result in enhanced near-field radiative heat transfer. The energy streamlines in such structures are studied for the first time. Energy streamlines illustrate the flow of energy through a structure when the fields are evanescent and energy propagation is not ray like. The energy streamlines through two semi-infinite uniaxially anisotropic effective medium structures, separated by a small vacuum gap, are modeled using the Green’s function. The lateral shift and penetration depth are calculated from the streamlines and shown to be relatively large compared to the vacuum gap dimension. The study of energy streamlines in hyperbolic metamaterials helps understand the near-field energy propagation on a fundamental level.

Ces dernières années, les oxydes de métaux de transition ont suscité de grands intérêts du point de vue fondamental et technologique. A cet égard, nous nous concentrons sur deux types d'oxydes : le première, le Perovskite double Pb2FeMoO6, avec un potentiel d'application sur des appareils magnétorésistances et spintroniques ; le deuxième, la zircone ZrO2 avec de excellentes propriétés mécaniques et diélectriques pour être utilisée dans les domaines de matériaux structuraux et fonctionnels. Dans la présente étude, nous utilisons la méthode ab-initio (first-principles calculation) pour étudier les détails des orbites décomposés des structures électroniques et des propriétés magnétiques du Pb2FeMoO6 massif de structure parfaite, massif avec des défauts et en structure de plaque. En même temps, les détails des orbites décomposés des structures électroniques, les propriétés mécaniques, dynamiques et diélectriques de six phases de la ZrO2 (cubique, tétragonale, monoclinique, orthorhombique I (Pbca), orthorhombique II (Pnma) et (Pca21)) ont également été étudiés. D'abord nous allons faire les calculs ab-initio sur les propriétés structurales, électroniques et magnétiques de double pérovskite Pb2FeMoO6 massif avec structure parfaite, massif avec défauts et en structure de plaque. La densité des états orbitaux décomposés montre le champ cristallin octaédrique des six atomes d'oxygène autour de métal de transition (des Fe ou des Mo) et divise les cinq états dégénérés des atomes libres de Fe ou Mo dans un états triplement dégénéré t2g (dxy, dyz et dzx) avec une énergie plus faible et dans un états doublement dégénéré eg (dz2 et dx2-y2) avec une énergie plus élevée. La nature semi-métalliques et les propriétés de transport complètes (100%) de spin de polarisation de Pb2FeMoO6 massif et en structures de plaque reflètent un grand potentiel d’application dans les dispositifs magnéto-résistifs et spintroniques. Le caractère semi-métallique est maintenu pour le composé Pb2FeMoO6 désordonné contenant d’antisites Fe(Mo), de lacunes de VFe, VO ou VPb, alors qu'il disparaît quand les antisites Mo(Fe), les échanges entre Fe-Mo ou les lacunes de VMo sont présents même la concentration de défauts est réduite jusqu'à C = 6,25%. Ainsi, les antisites Mo(Fe), les échanges entre Fe-Mo ou les lacunes de VMo doivent être évités afin de préserver le caractère semi-métallique du composé Pb2FeMoO6 et donc être utilisables dans des dispositifs magnéto-résistifs et spintroniques.Ensuite, basé sur la rigidité élastique constantes individuelle calculée Cij de six phases de ZrO2, les propriétés élastiques et mécaniques des agrégats polycristallins ont été prédits. Nous avons donc examiné le caractère isolant de la phase cubique/tétragonale de ZrO2 sous forme film avec différentes combinaisons et différentes épaisseurs possibles dans des plans avec des faibles indices de Miller [(001), (110) et (111)] (pour la phase cubique) et [(001), (100), (110), (101) et (111)] pour la phase tétragonale. Il se trouve que pour les différentes combinaisons et épaisseurs possibles dans ces trois / cinq plans avec faibles indices de Miller, seulement ZrO2-terminé sous forme d’un film orienté dans le plan (110)/(100) et O-terminé sous forme d’un film orienté (111)/(101) des phases cubique/tétragonale de ZrO2 maintiennent le caractère isolant même les épaisseurs d’empilement est réduit jusqu'à deux et trois couches atomiques. Puisque cubique et tétragonale ZrO2 ont grande anisotropie élastique, comme un exemple, le stress et l'énergie de déformation densité ont été calculées pour tous {hkl} -oriented grains d'un film ZrO2 cubique polycristallin
Transition-metal oxides have attracted exceptional research interest in recent years from both fundamental and technological perspectives. In this respect, we focus on two types of oxides, first, the double perovskite, Pb2FeMoO6 for a potential magnetoresistive and spintronics device application, second, zirconia ZrO2 with great mechanical and dielectric properties can be widely used in both structural and functional material fields. In this thesis we use first-principles calculations (ab-initio) to study systematically the detailed orbital-decomposed electronic structures and magnetic properties of Pb2FeMoO6 in the perfected bulk, defected bulk and slab structures. The detailed orbital-decomposed electronic structures, the mechanical, dynamical and dielectric properties of the ZrO2 in six phases (cubic, tetragonal, monoclinic, orthoI (Pbca), orthoII (Pnma) and (Pca21)) have also been studied.Firstly, considering the comparable ionic radius of Pb2+ (1.49Å) with that of Sr2+ (1.44Å), we propose for the first time to substitute Sr2+ ion with Pb2+ ion in Sr2FeMoO6 and a detailed study has been performed on the Pb2FeMoO6 in the perfected bulk, defected bulk and slab structures. The half-metallic nature and a complete (100%) spin-polarized transport properties reflect the bulk and especially slab Pb2FeMoO6 a potential application in magnetoresistive and spintronics devices; The detailed orbital-decomposed density of states show the octahedral crystal-field of the six oxygen atoms around transition-metal Fe or Mo atoms splits the five-fold degenerate states of the free Fe or Mo atoms into triply degenerate t2g (dxy, dyz and dzx) states with lower energy and doubly degenerate eg (dz2 and dx2-y2) states with higher energy, which cannot be observed in previous partial density of states ( ); The Fe3+ and Mo5+ ions are in the (3d5, s=5/2) and (4d1, s=1/2) states with positive and negative magnetic moments respectively and thus antiferromagnetic coupling via oxygen between them; The half-metallic character is maintained for the disordered Pb2FeMoO6 compounds containing FeMo antisite, VFe, VO, or VPb vacancy, while it vanishes when MoFe antisite, Fe-Mo interchange or VMo vacancy are presented even the defect concentration reduce down to C=6.25%. So the MoFe antisite, Fe-Mo interchange or VMo vacancy defects have to be avoided in order to preserve the half-metallic character of the Pb2FeMoO6 compounds and thus usable in magnetoresistive and spintronics devices.Secondly, based on the calculated individual elastic stiffness constants Cij of six ZrO2 phases, the elastic and mechanical properties of the polycrystalline aggregates have been predicted. We further exam the insulating characters of the cubic/tetragonal ZrO2 slabs with various possible terminations and thicknesses within three [(001), (110) and (111)]/five [(001), (100), (110), (101) and (111)] lower index Miller planes. It is found for the first time that among various possible terminations and thicknesses within these three/five lower index Miller planes, only ZrO2-terminated slabs of the (110)/(100) Miller plane and O-terminated slabs of the (111)/(101) Miller plane of cubic/tetragonal ZrO2 maintain the insulating character and thus usable as a gate dielectric oxide in IC industry even the slab thicknesses reduce down to 2 and 3 atomic layers, respectively; Since cubic and tetragonal ZrO2 have larger elastic anisotropy, both stress and strain energy density have been calculated for all {hkl}-oriented grains of a cubic ZrO2 polycrystalline film as one example

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
The RE2CoMnO6 (RE = La e Y) and Gd(Co0.5Mn0.5)O3 samples were obtained via modified Pechini method (MPM). Raman spectroscopy (RS), Fourier transform infrared (FTIR) spectroscopy, X ray powder diffraction, X ray photoelectron spectroscopy (XPS), SQUID and scanning electron microscopy (SEM) were used to characterize the samples, investigate structural and microstructural evolution, as well as evaluate their vibrational, magnetic and intrinsic dielectric properties. The impact of synthesis conditions on the structural ordering was investigated. We obtained a good control of structural order depending on the annealing temperature for LCMO. We observed an increase in the saturation magnetization, lifetime of the phonons and dielectric constant while suppression of anti-site defects and reduction of dielectric loss. Our investigations on polar phonons by FTIR revealed the extrinsic character of CDC effect on LCMO and clarified the contributions of phonons for dielectric constant in these systems. The temperature dependence Raman spectra of GCMO was investigated between 40 and 300 K and revealed an intriguing spin-phonon coupling, characterized by an increase in the energy of the most intense stretching mode near the magnetic transítion. The correlation between the Raman data and the magnetization suggests that the structure influences the magnitude of the spin-phonon coupling. Correlated analysis of LCMO, GCMO and YCMO systems show that all samples have vibrational properties quite similar. The intrinsic dielectric constants were obtained from the polar phonons dispersive parameters ε intr ̴ 15.8, 17.9 and 16.0, making the contributions to this value explicit, as well as the quality factors, reciprocal of dielectric losses , 𝑄𝑢×𝑓 ≈ 124,74 e 83 THz, extrapolated to microwave region at 10 GHz, to LCMO, GCMO and YCMO, respectively. XPS measures showed that oxidation state for Co and Mn ions are similar each another, being mostly Co2 + and Mn4 + for all investigated systems, however to GCMO, the spin-phonon coupling behavior and losses relatively large indicate that this compound has a high level of structural disordering.
Amostras de RE2CoMnO6 (RE = La e Y) e Gd(Co0.5Mn0.5)O3 foram obtidas pelo método Pechini modificado (MPM). Espectroscopia Raman (RS), espectroscopia no infravermelho por transformada de Fourier (FTIR), difração de raios X (DRX), espectroscopia de fotoelétrons excitados por raios X (XPS), magnetometria e microscopia eletrônica de varredura (MEV) foram utilizados para caracterizar as amostras, investigar evolução estrutural e microestrutural bem como avaliar suas propriedades vibracionais, magnéticas e dielétricas intrínsecas. O efeito da temperatura de tratamento térmico sobre o ordenamento estrutural foi investigado. Um bom controle do ordenamento estrutural em função da temperatura de tratamento térmico para o La2CoMnO6 (LCMO) foi obtido. Observa-se um incremento da magnetização de saturação, aumento do tempo de vida dos fônons, supressão de defeitos de anti-sítio, redução de perdas dielétricas e incremento da constante dielétrica. A investigação dos fônons polares via FTIR revelaram o caráter extrínseco da constante dielétrica colossal (CDC) no LCMO e explicitou as contribuições dos fônons para a constante dielétrica nesses sistemas. A dependência dos espectros Raman com a temperatura do Gd(Co1/2Mn1/2)O3 (GCMO) foi investigada entre 40 e 300 K revelando um acoplamento spin-fônon, caracterizado pelo incremento na energia do modo de estiramento mais intenso próximo à transição magnética. A correlação entre os resultados obtidos pela espectroscopia Raman e a magnetização sugere que a ordem estrutural influencia a magnitude do acoplamento spin-fônon. Análise correlacionada dos sistemas LCMO, GCMO e YCMO, mostram que todas as amostras apresentam características vibracionais bastante semelhantes. A partir dos parâmetros de dispersão dos fônons polares foram obtidas as constantes dielétricas intrínsecas ε intr ̴ 15,8, 17,9 e 16,0, explicitando as contribuições dos fônons para esses valores, e o fator de qualidade, recíproco da perdas dielétricas, 𝑄𝑢×𝑓 ≈ 124,74 e 83 THz, extrapolado para a região de micro-ondas em 10 GHz, para o LCMO, GCMO e YCMO, respectivamente. Medidas de XPS mostraram que os estados de oxidação dos íons de Co e Mn são semelhantes entre si, e principalmente do tipo Co2+/ Mn4+ para todos os sistemas estudados, sendo que para o GCMO, o acoplamento spin-fônon e as perdas dielétricas relativamente maiores indicaram que esse sistema possui elevada desordem estrutural.

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O titanato de estrôncio (SrTiO3) possui estrutura cristalina do tipo perovsquita. Materiais com este tipo de estrutura são utilizados para diversas aplicações, tais como, sensores, atuadores, em células a combustível de óxido sólido, entre outros. Devido as suas interessantes propriedades físicas, o SrTiO3 vem sendo intensamente estudado, em especial com a introdução de dopantes. Portanto, neste trabalho foi investigada a influência de diferentes teores de Ca (1; 2,5 e 5% mol) e Pr (0,025; 0,050; 0,075 e 1% mol) na microestrutura e propriedades elétricas e dielétricas do SrTiO3, assim como o material sem aditivos (puro). Os resultados mostram que após a sinterização do SrTiO3 puro, a microestrutura consiste de grãos poligonais com tamanho médio micrométrico, além de texturas lisas e rugosas. A condutividade elétrica das amostras sintetizadas sinterizadas a 1450 e 1500ºC é máxima para 2 horas de patamar. Apenas as amostras de SrTiO3 contendo 1% em mol de Ca apresentam fase única. O tamanho médio de grãos das amostras contendo 1% em mol de Ca é 10,65 ± 0,28 µm e para teores acima deste valor ocorre crescimento significativo dos grãos. As medidas de condutividade elétrica mostraram que as amostras contendo a adição de 1% em mol de Ca possuem maior condutividade dos grãos em relação ao material puro. Para as amostras contendo teores de até 0,075% mol de Pr, pode-se observar alguns grãos lisos e outros rugosos e não há variação considerável do tamanho médio de grãos. As amostras contendo menor teor de Pr (0,025% mol) apresentam maior condutividade dos grãos e contornos de grãos. As amostras de SrTiO3 sintetizado sinterizadas a 1450ºC/10 h apresentaram permissividade elétrica colossal em temperatura ambiente em altas frequências.
Dissertação (Mestrado em Tecnologia Nuclear)
IPEN/D
Instituto de Pesquisas Energéticas e Nucleares - IPEN-CNEN/SP

On a optimise la synthese d'oxynitrures de type abo::(2)n, de structure perovskite et presentant des caracteristiques dielectriques interessantes, afin d'obtenir des produits purs en grande quantite: batao::(2)n, srtao::(2)n, banbo::(2)n, srnbo::(2)n, ainsi que des solutions solides de ces composes. On a ensuite etudie leur densification sous atmosphere neutre ou non oxydante, avec ou sans ajouts de frittage, cherchant a obtenir une ceramique dielectrique. Une telle ceramique pourrait, utilisee comme materiau de base pour condensateurs multicouches, remplacer le batio::(3), qui doit etre cofritte avec des electrodes internes en metaux couteux

The surge of interest in multifunctional materials over the past 15 years has been driven by their fascinating physical properties and huge potential for technological applications such as sensors, microwave devices, energy harvesting, photovoltaic technologies, solid-state refrigeration, and data storage recording technologies. Among the others, magnetoelectric multiferroic composites are a special class of advanced solid-state compounds with coupled ferromagnetic and ferroelectric ferroic orders which allow to perform more than one task by combining electronic, magnetic and mechanical properties into a single device component. The production and characterization of lead zirconate titanate (PZT)- cobalt ferrite composites was the main topic of the thesis. During the PhD activity different ceramic processing and characterization technologies were studied and involved in order to optimize the produced materials as a function of the final microstructural and functional properties. The synthesis of cobalt ferrite (CF) and niobium-doped lead zirconate titanate (PZTN) powders by solid state reaction method and sol-gel technique, to control the particle size distributions and their microstructural and functional properties through calcination and milling treatments has been addressed first, followed by the mixing of the PZT and CF powders to produce particulate composites. The dispersion of PZT and CF in a liquid media, to produce layered composites by depositing the particles by electrophoretic deposition was an objective of the work as well. Key issues such as the lead loss during the sintering of PZTN-CF composites and the reaction between CF and titania have been addressed and have resulted in improvements in the sintering and characterization techniques leading to the production of fully dense PZTN-CF dual-particulate composites. In particular, the optimized sintering parameters have configured a new paradigm of ceramic sintering, which has been called quite-fast sintering, in respect to the traditional one, and the study of the PbO loss has led to propose an equation to calculate the PbO loss through XRD analysis. Further important achieved results were: the production of nanocobalt ferrite particles by multi-step milling, the correlation between the spin-canting angle with the microstrain and the average crystallite size of nanocobalt ferrite particles, the understanding of the CF growth mechanisms, the extension of the Globus model from small ferromagnetic grains “having no defect inside” to multiparallel-twinned overgrown ones, the understanding of heating rate effect on the interface nucleation onset of the anatase-to-rutile transformation and the anatase particle size, and the reaction products between CF and rutile at 1200 °C at the variation of CF/rutile ratio.

High dielectric constant materials have tremendous impact on miniaturization of devices that are used in various applications like wireless communication systems, microelectronics, global positioning systems, etc. To store electric charge in a very small space necessarily needs a capacitor with very high dielectric constant. Thus, these materials are very important in fabricating capacitors, or metal oxide semiconductor filed effect transistor (MOSFET). Among the existing commercially available devices, silicon-based microelectronic devices are commonly used based on the moderately stable dielectric constants of silicon with low losses and minimal temperature and frequency dependence. However, now-a-days, the perovskite based transition metal oxides have drawn attention that have the ability to fulfill all the requirements for being a good dielectric material in all the industrial applications. In this thesis we have studied a few selected perovskite based transition metal oxide systems in terms of their dielectric and magnetic behaviour. In Chapter 1, we have have given brief introductions about the some application of dielectric materials and the origin of dielectric and magnetic properties in the materials. We have also discussed about the polarisation in the dielectric materials to understand it’s frequency dependence and also to formalise different relaxation behaviour with the help of physical and mathematical explanation. In Chapter 2, we describe the various methodologies adopted in this thesis. In Chapter 3, we have studied the dielectric behaviour of Nd2NiMnO6, a rare earth based double perovskite ferromagnetic insulator. We successfully synthesised and characterised the compounds, settled the valency issues with the help of temperature dependent XAS of the transition metal atom in contrast to the existing controversy available in literature. We have found that this material shows relaxor kind behaviour with a colossal dielectric constant value. We have studied in details the origin of the colossal dielectric constant and the relaxation behaviour along with the a.c and d.c. transport properties. We have shown the origin of the ferromagnetism (TC ∼ 200 K) with a low temperature antiferromagnetic ordering (TN ∼ 55 K) with the help of detailed studies of temperature dependent d.c., a.c. magnetism and their XMCD. We have also investigated the isothermal variation of magnetodielectric and magnetoresistance behaviour as a function of magnetic field and their origin. In Chapter 4,we study the effect of cation anti-site disorder on the magnetic, dielectric and transport properties of another rare earth based ferromagnetic double perovskite insulator La2NiMnO6 by controlling different extent of anti-site disordered. We have confirmed the valency of the transition metal cations using XAS technique and followed by shown, different types of magnetic interaction between the transition metal cations using d.c magnetic, quantitative XMCD analysis and the origin of large dielectric response, a.c. transport & dielectric relaxation using temperature variation dielectric measurement as an experimental evidence in contrast of our previous speculation published in literature. We further have studied, the coupling between the magnetic and electric spin through isothermal magnetodielectric measurement. In Chapter 5, we have successfully synthesised and characterised a solid solution of YMnxIn1−xO3 series via different mol % of In doping in the multiferroic YMnO3 system. YMnO3 is a well known multiferroic material studied rigorously during past few decades. We have seen, YMnO3 which has a antiferromagnetic ordering temperature of ∼ 75 K suppressed with increasing the dopant concentration In. We have figured out the effect of In doping in the suppression of multiferroic phase and extended it to the dielectric properties. We have found that, the temperature dependence of dielectric constant shows an anomaly at the magnetic ordering temperature and studied magnetodielectric coupling. We have also investigated the temperature variation of dielectric relaxation and a.c. transport behaviour as a function of composition. In Chapter 6, we have identified the phase seperation and proposed a phase diagram as function of Gd doping in the Ho2−xGdxCuTiO6 double perovskite, where two end member, namely Ho2CuTiO6 and Gd2CuTiO6 are found to be in two different crystallographic phase as, hexagonal (P63cm) and orthorhombic (Pnmm), respectively. We have characterised the valency of the transition metal cations using XAS.We have seen very less temperature and frequency dependence of dielectric constant in hexagonal phase in compare to the orthorhombic phase and tried to figuring out from experimental analysis by performing temperature dependence dielectric const measurement. We also have shown the effect of doping in the origin of dielectric relaxation, a.c transport and magnetic behaviour of this system. In Chapter 7, we have synthesised and characterised successfully two different rare earth based layered perovskite La3Cu2VO9 and La4Cu3MoO12 compounds are of centrosymmetric space group. We have figured it of the valency of the different atoms present in the compound using XAS. We also do have observed the good temperature stability of dielectric constant of these materials and explored origin of mechanism in the dielectric relaxation, a.c. transport property by performing the temperature dependance dielectric measurement. The magnetic structure also have shown with the help of d.d. magnetic measurements. In Appendix A, we have seen the very stable dielectric constant constant from very low to above room temperature of the 2D nano PbS. The frequency stability of dielectric constant is also remarkable in compare to bulk PbS values available in literature. We have explored the origin of the conductivity and relaxation mechanism performing dielectric constant measurement. In conclusion, we investigate, in this thesis, dielectric properties of different transition metal oxides system and the mechanism of dielectric relaxation, a.c, d.c transport and their origin of magnetic response.

High dielectric constant materials have tremendous impact on miniaturization of devices that are used in various applications like wireless communication systems, microelectronics, global positioning systems, etc. To store electric charge in a very small space necessarily needs a capacitor with very high dielectric constant. Thus, these materials are very important in fabricating capacitors, or metal oxide semiconductor filed effect transistor (MOSFET). Among the existing commercially available devices, silicon-based microelectronic devices are commonly used based on the moderately stable dielectric constants of silicon with low losses and minimal temperature and frequency dependence. However, now-a-days, the perovskite based transition metal oxides have drawn attention that have the ability to fulfill all the requirements for being a good dielectric material in all the industrial applications. In this thesis we have studied a few selected perovskite based transition metal oxide systems in terms of their dielectric and magnetic behaviour. In Chapter 1, we have have given brief introductions about the some application of dielectric materials and the origin of dielectric and magnetic properties in the materials. We have also discussed about the polarisation in the dielectric materials to understand it’s frequency dependence and also to formalise different relaxation behaviour with the help of physical and mathematical explanation. In Chapter 2, we describe the various methodologies adopted in this thesis. In Chapter 3, we have studied the dielectric behaviour of Nd2NiMnO6, a rare earth based double perovskite ferromagnetic insulator. We successfully synthesised and characterised the compounds, settled the valency issues with the help of temperature dependent XAS of the transition metal atom in contrast to the existing controversy available in literature. We have found that this material shows relaxor kind behaviour with a colossal dielectric constant value. We have studied in details the origin of the colossal dielectric constant and the relaxation behaviour along with the a.c and d.c. transport properties. We have shown the origin of the ferromagnetism (TC ∼ 200 K) with a low temperature antiferromagnetic ordering (TN ∼ 55 K) with the help of detailed studies of temperature dependent d.c., a.c. magnetism and their XMCD. We have also investigated the isothermal variation of magnetodielectric and magnetoresistance behaviour as a function of magnetic field and their origin. In Chapter 4,we study the effect of cation anti-site disorder on the magnetic, dielectric and transport properties of another rare earth based ferromagnetic double perovskite insulator La2NiMnO6 by controlling different extent of anti-site disordered. We have confirmed the valency of the transition metal cations using XAS technique and followed by shown, different types of magnetic interaction between the transition metal cations using d.c magnetic, quantitative XMCD analysis and the origin of large dielectric response, a.c. transport & dielectric relaxation using temperature variation dielectric measurement as an experimental evidence in contrast of our previous speculation published in literature. We further have studied, the coupling between the magnetic and electric spin through isothermal magnetodielectric measurement. In Chapter 5, we have successfully synthesised and characterised a solid solution of YMnxIn1−xO3 series via different mol % of In doping in the multiferroic YMnO3 system. YMnO3 is a well known multiferroic material studied rigorously during past few decades. We have seen, YMnO3 which has a antiferromagnetic ordering temperature of ∼ 75 K suppressed with increasing the dopant concentration In. We have figured out the effect of In doping in the suppression of multiferroic phase and extended it to the dielectric properties. We have found that, the temperature dependence of dielectric constant shows an anomaly at the magnetic ordering temperature and studied magnetodielectric coupling. We have also investigated the temperature variation of dielectric relaxation and a.c. transport behaviour as a function of composition. In Chapter 6, we have identified the phase seperation and proposed a phase diagram as function of Gd doping in the Ho2−xGdxCuTiO6 double perovskite, where two end member, namely Ho2CuTiO6 and Gd2CuTiO6 are found to be in two different crystallographic phase as, hexagonal (P63cm) and orthorhombic (Pnmm), respectively. We have characterised the valency of the transition metal cations using XAS.We have seen very less temperature and frequency dependence of dielectric constant in hexagonal phase in compare to the orthorhombic phase and tried to figuring out from experimental analysis by performing temperature dependence dielectric const measurement. We also have shown the effect of doping in the origin of dielectric relaxation, a.c transport and magnetic behaviour of this system. In Chapter 7, we have synthesised and characterised successfully two different rare earth based layered perovskite La3Cu2VO9 and La4Cu3MoO12 compounds are of centrosymmetric space group. We have figured it of the valency of the different atoms present in the compound using XAS. We also do have observed the good temperature stability of dielectric constant of these materials and explored origin of mechanism in the dielectric relaxation, a.c. transport property by performing the temperature dependance dielectric measurement. The magnetic structure also have shown with the help of d.d. magnetic measurements. In Appendix A, we have seen the very stable dielectric constant constant from very low to above room temperature of the 2D nano PbS. The frequency stability of dielectric constant is also remarkable in compare to bulk PbS values available in literature. We have explored the origin of the conductivity and relaxation mechanism performing dielectric constant measurement. In conclusion, we investigate, in this thesis, dielectric properties of different transition metal oxides system and the mechanism of dielectric relaxation, a.c, d.c transport and their origin of magnetic response.

碩士
國立臺灣師範大學
物理學系
95
We study the optical properties of single crystalline multiferroic materials, such as (Tb1-xNax)MnO3 (x = 0.0, 0.03, and 0.05), DyMnO3, and CdCr2S4. The room-temperature Raman spectra of TbMnO3 are similar with the previous results of Phys. Rev. B 73, 064302 (2006). The position and intensity of Raman-active phonons are perturbed to some extent by Na doping. It is likely that monovalent Na+ ions were used to create oxygen vacancies and to induce the local lattice distortions. When doped with Dy on Tb, the phonon frequencies are hardening and their linewidths are narrowing, which is due to the chemical substitution of the smaller Dy ions into the bigger Tb ionic sites. The room-temperature Raman spectra of CdCr2S4 are also similar with the previous results of Phys. Rev. B 21, 1316 (1980). With decreasing temperature, overall infrared-active phonon spectra of (Tb1-xNax)MnO3 and DyMnO3 remain unchanged. However, the phonon mode at about 380 cm-1 show a softening and an increased intensity at low temperature, which is possibly due to the redistribution of effective charges in the unit cell. In the ferromagnetic phase below 84 K, the phonon peaks of CdCr2S4 near 325 and 381 cm-1 show a shift to lower frequencies, indicating the spin-phonon coupling via the superexchange interactions of Cr-S-Cr and Cr-S-Cd-S-Cr.

This thesis presents the synthesis and investigations of physical and chemical properties of multiferroic materials experimentally as well as theoretically. Multiferroics are materials in which at least two of the three ferroic orders, ferroelectricity, ferromagnetism and ferroelasticity occur in the same phase. Multiferroics, have the potential to be used as a four state as well as cross switchable memory devices. The thesis is organized into seven Chapters. Chapter 1 gives a brief overview of the different facets of multiferroics, explaining the origin of Multiferroicity and magnetoelectric coupling, their possible technological applications and the challenges involved. Chapter 2-4 concerns the experimental aspects and chapter 5-7 concerns the theoretical aspects. Chapter 2 deals with experimental investigations on nanoscale charge-ordered rare earth manganites. It shows with decreasing particle size the ferromagnetic interaction increases and the charge-ordering vanishes down to the lowest sizes. Chapter 3 describes magneto-dielectric, magnetic and ferroelectric properties of hexagonal LuMnO3. It also describes the Raman spectroscopy of this compound through the magnetic and ferroelectric transition temperatures. Chapter 4 deals with the anisotropic multiferroic properties in single crystals of hexagonal ErMnO3. In chapter 5 a brief introduction of density functional theory (DFT) is given. Chapter 6 deals with the magneto-structural changes, spin-phonon couplings and crystal field splittings for the different magnetic orderings LuMnO3. Chapter 7 elucidates the role of Lu d0-ness for the ferroelectricity observed of this compound.

This thesis presents the synthesis and investigations of physical and chemical properties of multiferroic materials experimentally as well as theoretically. Multiferroics are materials in which at least two of the three ferroic orders, ferroelectricity, ferromagnetism and ferroelasticity occur in the same phase. Multiferroics, have the potential to be used as a four state as well as cross switchable memory devices. The thesis is organized into seven Chapters. Chapter 1 gives a brief overview of the different facets of multiferroics, explaining the origin of Multiferroicity and magnetoelectric coupling, their possible technological applications and the challenges involved. Chapter 2-4 concerns the experimental aspects and chapter 5-7 concerns the theoretical aspects. Chapter 2 deals with experimental investigations on nanoscale charge-ordered rare earth manganites. It shows with decreasing particle size the ferromagnetic interaction increases and the charge-ordering vanishes down to the lowest sizes. Chapter 3 describes magneto-dielectric, magnetic and ferroelectric properties of hexagonal LuMnO3. It also describes the Raman spectroscopy of this compound through the magnetic and ferroelectric transition temperatures. Chapter 4 deals with the anisotropic multiferroic properties in single crystals of hexagonal ErMnO3. In chapter 5 a brief introduction of density functional theory (DFT) is given. Chapter 6 deals with the magneto-structural changes, spin-phonon couplings and crystal field splittings for the different magnetic orderings LuMnO3. Chapter 7 elucidates the role of Lu d0-ness for the ferroelectricity observed of this compound.

博士
國立臺灣大學
物理研究所
103
We perform a systematic ab initio study of two principal spin-related phenomena,namely, anomalous Hall effect and current spin polarization, in Co2Fe-based Heusler compounds Co2FeX (X = Al, Ga, In, Si, Ge, Sn) in the cubic L21 structure. First, we find that the spin-polarization of the longitudinal current (PL) in Co2FeX (X = Al, Ga, In, Al0.5Si0.5 and Sn) approximately equals to 100 % The other compounds also have a high current spin polarization with PL larger than 85%. Interestingly, PD is negative in Co2FeX (X = Si, Ge and Sn), differing in sign from the PL as well as that from the results of transport experiments. Second, the calculated anomalous Hall conductivities (AHCs) are moderate, being within 200 S/cm, and agree well with the results of experiments on highly L21 ordered Co2FeSi specimen. Third, the calculated total magnetic moments are consistent with the corresponding experimental ones in all the studied compounds except Co2FeSi. We also performed the GGA plus on-site Coulomb interaction U calculations. We found that including the U affects the calculated total magnetic moment, spin polarization and AHC significantly. Meanwhile, unfortunately, this results in a disagreement with the available experimental results. All these interesting findings are discussed in terms of the underlying band structures. We also study the physical mechanism for ferroelectric polarization of multiferroic oxide, such as BiMnO3 and Li(Na)Cu2O2 with C2/c and Pnma structures. We found that the ground state of magnetic structure of BiMnO3 is noncollinear, the x- and z-directions are antiferromagnetic, the y-direction is ferromagnetic. The net magnetic dipole moment is 3.98 μB per chemical formula and it is consistent with experiment results. We also performed the electric polarized calculations using Berry phase method. The findings indicate that there is significant electric-polarization at both antiferromagnetism (AF2) and ferrimagnetism (Fe2), but there is no electricpolarization at the ground state of FM. This interesting phenomenon comes from the breaking of the spacial inversion symmetry. The magnitude of electric polarization is related strongly with the magnitude of antiferromagnetic moment. We also perform the GGA+U method to study both LiCu2O2 and NaCu2O2. Their structures are very similar, Therefore, both compounds exhibit almost identical physical properties, such as electronic structure, magnetism and ferroelectricity. However, experimental results show that LiCu2O2 is multiferroic, but NaCu2O2 is not. Antiferroelectricity in NaCu2O2 could be explained by multiple spin-spiral CuO ribbons along the y-axis with opposite chiralities. However, this would leave the ferroelectricity in LiCu2O2 unexplained. Interdiffusion of Li and Cu in LiCu2O2 while no interdiffusion of Na and Cu in NaCu2O2 could be a resolution. However, the good agreement in electronic structure between the XAS measurement and GGA+U calculation suggest that this is unlikely the explanation. We have carried out a systematic ab initio study of the magnetic properties of Heusler compounds and multiferroic oxide. These findings suggest that our simulation results are consistent with that of experiments. We hope that our systematic studies can help to understand the microscopic mechanism and have some benefits to the development of related applications.

碩士
國立交通大學
電子物理系所
98
We have successfully obtained the a-axis-oriented orthorhombic YbMnO3 (100) thin films grown on SrTiO3(110) substrate by pulsed laser deposition (PLD).The nearly-single-crystalline characteristic of these films allow us to probe the electric and magnetic properties of the rare-earth manganites with E-phase antiferromagnetic(AFM) structure. We measured the susceptibility of YbMnO3 thin film along different crystalline axes by SQUID (Superconductor Quantum iii Interference Device), and observed that these in another phase transition at temperatures below the AFM Néel Temperature TN. The temperature dependent dielectric constant ε of the films was measured by LCR Meter, and was compared with the magnetization results. The results indicate that the orthorhombic YbMnO3 does have an extra commensurate to incommensurate phase transition within the AFM state at 35.8 K. The direct polarization measurements along the a-axis, however, did not reveal the significant magnetism-induced ferroelectricity as anticipated by the theoretical prediction.

博士
國立交通大學
電子物理系所
104
The potential of applications to modern storage technology is attracting a lot of attention on multiferroics. Most intriguingly, the observation of magnetic field induced polarization is an important link to understand the internal or external mechanism of magnetoelectric coupling. In E-type multiferroic orthorhombic rare-earth manganites (o-ReMnO3, Re= Y, Ho, Er, Tm, Yb, Lu), the prediction of gigantic spontaneous polarization, two orders larger then TbMnO3, was calculated by several teams of theorists. Later, the experiments show that the magnitude of polarization was encouraging; however, unexpected observations of magnetic phase transition and weakening of polarization was also disclosed. To uncover the abovementioned unpredicted observations, in this thesis, we study a series of E-type o-ReMnO3 (Re= Ho, Er, Tm, Yb) thin films by determining their magnetic and dielectric properties. First, to produce manganites thin films, we use pulse laser deposition for growing different crystal orientation thin films on SrTiO3 and LaAlO3 substrates. Then, we determine the structure orientation and lattice constants of o-ReMnO3 thin films by XRD. The magnetic and dielectric properties of o-ReMnO3 thin films are measured by using a Quantum Design superconducting quantum interference device system (SQUID) and Agilent 4980A (LCR meter). The earlier studies in our lab unveil that the reordering transition of E-type o-ReMnO3 thin films appeared along unexpected axis might due to the epitaxially induced strain effect. However, instead of following our earlier argument on the strain effect, new evidence shows the f-electrons moments of rare-earth elements may play a crucial role on the unexpected magnetic reordering transition. Further studies of our results suggest the rare-earth elements moments are non-negligible considerations for magnetic phase transition in E-type o-ReMnO3 thin films. Moreover, with the increase of total angular momentum J of the 4f-electrons of rare-earth element the orientation of magnetic reordering was changed from the b-axis for Yb3+ to the a-axis for Tm3+ and, eventually to the c-axis for Er3+ and Ho3+. Additionally, the observation of dielectric constant uncovers the plausible evidence of the coexistence between E-type and cycloidal spins state below Neel temperature. It is obvious that the spins reordering transition in E-type o-ReMnO3 thin films are more complex than we knew before. The third part of our results suggests the cycloidal spins state is found below Neel temperature in E-type o-TmMnO3 thin films, which also support the other findings on cycloidal spins state or coexistence state. These interesting observations may refresh the information of magnetic phase transition in orthorhombic rare-earth manganites thin films.

碩士
國立屏東科技大學
機械工程系所
100
Bi2Mo2O9 is regarded as a good micro-dielectric material, due to the lower sintering temperature (620 ℃). The dielectric constant of Bi2Mo2O9 ceramic is about 38, the value of Q×f is about 12500 GHz, the value of temperature coefficient of resonant frequency (TCF) and dielectric loss is about +31 ppm/℃ and 15×10－4, respectively. In order to improve the dielectric properties, Bi2Mo2O9 doped with 0.5 ~ 3 mol.% Nb2O5 and Y2O3 separately were synthesized, also the density, phase structure, microstructure, and the dielectric properties were investigated in this study. It was found that Bi2Mo2O9 doped with 3 mol.% Nb2O5 could suppress the second phase (γ-Bi2MoO6). The dielectric properties are listed: a dielectric constant of 35.5, a low dielectric loss of 1×10-4 , an insulation resistance of 1.22×1011Ω, a Q×f value of 13944 GHz, a stable temperature coefficient of capacitance ±0.25 % and TCF of +1.92 ppm/℃were obtained. For Bi2Mo2O9 doped with 3 mol.% Y2O3, it could suppress the second phase, and decrease the sheet grain. The dielectric properties are listed: a dielectric constant of 37.7, a low dielectric loss of 5×10-4 , an insulation resistance of 1.8×1011Ω, a Q×f value of 13995 GHz, and TCF of +6.51 ppm/℃were obtained. Microwave-sintering also could suppress the second phase, Bi2MoO6. Bi2Mo2O9 doped with 0.5 ~ 3 mol.% Nb2O5 were fired with microwave sintering at 560 and 580 ℃, and a single phase Bi2Mo2O9 can be obtained. On the other hand, Bi2Mo2O9 doped with 0.5 ~ 3 mol.% Y2O3 were fired with microwave sintering. It is found that a single phase Bi2Mo2O9 is existed at 560 ℃, but some second phases are observed at 580 ℃.

碩士
國立臺灣科技大學
機械工程系
95
Lead-free material system of Bi0.5-xNa0.5-xKxRExTiO3 (RE = La, Sm and Gd) ceramics with concentration x = 0.05, 0.025, 0.0125 and Bi0.5-xNa0.5-yKyRExTiO3 ceramics with x = 0.0125, and y = 0.09 were successfully synthesized by conventional ceramic processing techniques. The structural and micro structural properties of these ceramics were examined using X-ray diffractometer, and electron microscopy. XRD of Bi0.5-xNa0.5-xKxRExTiO3 ceramics has shown the presence of phases. Amorphous phase coated on granular surfaces and sharp edge of fractured surface specimens indicates the formation of glassy phase in this system. Grain size is found to change with rare earth element. Microstructure indicates the different amount of amorphous phase in different rare earth doped ceramic. The temperature dependence of dielectric measurement reveal that the solid solutions experience two phase transitions from ferroelectric to anti-ferroelectric and anti-ferroelectric to paraelectric. Broadening of peak parameter indicates higher diffuse phase transition implying that rare earth dopants introduce defects and localized strain field and hence modification in electrical properties of material. AC impedance study was carried out to separate the contribution of amorphous phase and the effect of amorphous phase on electrical properties. Impedance is found to be dependent on temperature and frequency. Cole-cole plots (Z’-Z”) show single semicircles at all temperatures indicating the uniform distribution and homogeneity in the specimen under study. Relaxation phenomenon is found to exist due to oxygen vacancies. Grain boundary conductivity is observed to be high in Gd doped BNKT ceramics due to less amorphous phase indicating the effect of amorphous phase existing at the grain boundary on the electrical conductivity. Higher magnitude of remanant polarization (Pr=33.4 µC/cm2) with lower coercive field (Ec=19.8 kV/cm) is observed in Sm doped Bi0.5-xNa0.5-yKyRExTiO3 specimen, due to less difference in ionic radii of host and doped cation which makes easy switching of dipole. Highly dense and smaller grain size has effected on conductivity and electromechanical property to achieve higher value of kp as well as grain boundary conductivity in Gd doped BNKT specimen.

Disorder in materials often brings in new and exotic physical properties along with it. It is thus very important to study different kinds of disorder and their implications on various material properties. In this thesis, we study selected transition metal oxide families of compounds, each being associated with a specific kind of disorder and investigate effects of that disorder on their dielectric and magnetic properties. In Chapter1, we have given brief introductions on the origin of magnetic and dielectric properties in materials and have also discussed various mechanism which give rise to multiferroism in materials which exhibit both spontaneous magnetic ordering and spontaneous electric ordering in the same phase of the material. In Chapter2,we describe the various methodologies adopted in this thesis. In Chapter3,we mainly study the effect of cationic size-disorder in deciding un-usually robust dielectric properties of Ln2CuTiO6(Ln=Y,Dy,Ho,Er,Yb) family of compounds. We discover that these materials, in addition to possessing large dielectric constant values, also exhibit exceptional stabilities of their dielectric constants with respect to large changes in temperature and frequency. We further find that this class of materials are non-ferroelectrics though its hares the same non-centrosymmetric space group, P63cm,with the well-known multiferroic YMnO3 that undergoes a ferroelectric transition at 940K. Using first principles calculations, we establish that exceptional dielectric properties result from a combination of two separate effects. Extensive size disorders at the Cu/Ti B-site suppress the expected ferroelectric transition, leading to relatively large values of the dielectric constant for every compound investigated in this series. Additionally, it is shown that the majority contribution to the dielectric constant arises from intermediate-frequency polar vibrational modes, making it relatively stable against temperature variations. In Chapter4, we study the effect of cation anti-site disorder on the magnetic, electric and dielectric properties of the solid solution series of (x)Fe2O3-(1-x)FeTiO3 for several values of x. For intermediate values of x, these solid solution members are found to be strong ferrimagnets. Anti-site cation disorder, between Fe and Ti, however strongly reduces the magnetic moment values. By tuning the degree of cation anti-site disorder, we attain multi-functionality in these samples. We have performed detailed characterizations of valence states of Fe and Ti across the solid solution series using x-ray photoelectron spectroscopy and x-ray absorption spectroscopy. Using x-ray magnetic circular dichroism, we validate the microscopic model of magnetism and suggest a microscopic picture of the anti-site cation disorder for these samples. In Chapter5,we study the effects of controlled chemical disorder in SrTiO3 lattice, by performing site-specific doping of Mn in SrTiO3. We find that site specific Mn doping has decisive influence on their dielectric properties with qualitatively and quantitatively different behaviors between these doped samples .Using electron paramagnetic resonance experiments, we establish the site specific doping of Mn in SrTiO3 lattice. We find that while Mn doping at Ti site continues to remain paraelectric, Mn doping at the Sr site becomes a relaxor ferroelectric. We find samples having Mn substituted at both Sr and Ti sites simultaneously to be also relaxor ferroelectrics. Combining experiments with first principles calculations, we understand the origin for the high temperature dielectric properties of various Mn doped SrTiO3 samples. We show that Mn ions doped at the Sr sites off-centers and gives a significant dipolar contribution to their dielectric constants. While demonstrating the superior dielectric properties of Mn doped SrTiO3 ceramics ,we also elucidate their magnetic properties in details. In Chapter6,we study the effect of cation anti-site disorder on the magnetic and dielectric properties of undoped and Lu doped La2NiMnO6 samples. Using detailed spectroscopic characterizations of these samples with x-ray absorption experiments, coupled with d.c.magnetization and a.c.susceptibility measurements, we demonstrate that while the doped samples are ferromagnetic, the undoped samples exhibit re-entrant spin-glass magnetism. We also show that the dielectric properties of undoped La2NiMnO6,crys-tallizing in monoclinic and rhombohedral phases are distinctly different and we study their dielectric relaxations in details. We also demonstrate multiferroism in Lu doped La2NiMnO6 samples. In Appendix A, we study the electronic origin of ferroelectric polarization in the spin spiral compound ,MnWO4. Using x-ray absorption spectroscopy on synthesized MnWO4 samples, coupled with configuration interaction calculations, we establish quantitatively a significant population of Mn 3d states beyond the expected half filling and provide a critical insight into the significant presence of spin-orbit coupling and consequent finite polarization in this system. In Appendix B, we study charge-transfer doping in few-layer grapheme covered with electron acceptor (Tetracyanoethylene) and donor (Tetrathiafulvalene) molecules using x-ray photoelectron spectroscopy. We give quantitative estimates of the extent of doping in these samples and thereby elucidate the origin of unusual shifts of their Raman G bands in contrast to electrochemically doping schemes. In conclusion, we investigate, in this thesis, properties of different classes of compounds in presence of distinctly different kinds of disorder and establish the critical role of disorder in each case in tuning their desirable physical properties.

Disorder in materials often brings in new and exotic physical properties along with it. It is thus very important to study different kinds of disorder and their implications on various material properties. In this thesis, we study selected transition metal oxide families of compounds, each being associated with a specific kind of disorder and investigate effects of that disorder on their dielectric and magnetic properties. In Chapter1, we have given brief introductions on the origin of magnetic and dielectric properties in materials and have also discussed various mechanism which give rise to multiferroism in materials which exhibit both spontaneous magnetic ordering and spontaneous electric ordering in the same phase of the material. In Chapter2,we describe the various methodologies adopted in this thesis. In Chapter3,we mainly study the effect of cationic size-disorder in deciding un-usually robust dielectric properties of Ln2CuTiO6(Ln=Y,Dy,Ho,Er,Yb) family of compounds. We discover that these materials, in addition to possessing large dielectric constant values, also exhibit exceptional stabilities of their dielectric constants with respect to large changes in temperature and frequency. We further find that this class of materials are non-ferroelectrics though its hares the same non-centrosymmetric space group, P63cm,with the well-known multiferroic YMnO3 that undergoes a ferroelectric transition at 940K. Using first principles calculations, we establish that exceptional dielectric properties result from a combination of two separate effects. Extensive size disorders at the Cu/Ti B-site suppress the expected ferroelectric transition, leading to relatively large values of the dielectric constant for every compound investigated in this series. Additionally, it is shown that the majority contribution to the dielectric constant arises from intermediate-frequency polar vibrational modes, making it relatively stable against temperature variations. In Chapter4, we study the effect of cation anti-site disorder on the magnetic, electric and dielectric properties of the solid solution series of (x)Fe2O3-(1-x)FeTiO3 for several values of x. For intermediate values of x, these solid solution members are found to be strong ferrimagnets. Anti-site cation disorder, between Fe and Ti, however strongly reduces the magnetic moment values. By tuning the degree of cation anti-site disorder, we attain multi-functionality in these samples. We have performed detailed characterizations of valence states of Fe and Ti across the solid solution series using x-ray photoelectron spectroscopy and x-ray absorption spectroscopy. Using x-ray magnetic circular dichroism, we validate the microscopic model of magnetism and suggest a microscopic picture of the anti-site cation disorder for these samples. In Chapter5,we study the effects of controlled chemical disorder in SrTiO3 lattice, by performing site-specific doping of Mn in SrTiO3. We find that site specific Mn doping has decisive influence on their dielectric properties with qualitatively and quantitatively different behaviors between these doped samples .Using electron paramagnetic resonance experiments, we establish the site specific doping of Mn in SrTiO3 lattice. We find that while Mn doping at Ti site continues to remain paraelectric, Mn doping at the Sr site becomes a relaxor ferroelectric. We find samples having Mn substituted at both Sr and Ti sites simultaneously to be also relaxor ferroelectrics. Combining experiments with first principles calculations, we understand the origin for the high temperature dielectric properties of various Mn doped SrTiO3 samples. We show that Mn ions doped at the Sr sites off-centers and gives a significant dipolar contribution to their dielectric constants. While demonstrating the superior dielectric properties of Mn doped SrTiO3 ceramics ,we also elucidate their magnetic properties in details. In Chapter6,we study the effect of cation anti-site disorder on the magnetic and dielectric properties of undoped and Lu doped La2NiMnO6 samples. Using detailed spectroscopic characterizations of these samples with x-ray absorption experiments, coupled with d.c.magnetization and a.c.susceptibility measurements, we demonstrate that while the doped samples are ferromagnetic, the undoped samples exhibit re-entrant spin-glass magnetism. We also show that the dielectric properties of undoped La2NiMnO6,crys-tallizing in monoclinic and rhombohedral phases are distinctly different and we study their dielectric relaxations in details. We also demonstrate multiferroism in Lu doped La2NiMnO6 samples. In Appendix A, we study the electronic origin of ferroelectric polarization in the spin spiral compound ,MnWO4. Using x-ray absorption spectroscopy on synthesized MnWO4 samples, coupled with configuration interaction calculations, we establish quantitatively a significant population of Mn 3d states beyond the expected half filling and provide a critical insight into the significant presence of spin-orbit coupling and consequent finite polarization in this system. In Appendix B, we study charge-transfer doping in few-layer grapheme covered with electron acceptor (Tetracyanoethylene) and donor (Tetrathiafulvalene) molecules using x-ray photoelectron spectroscopy. We give quantitative estimates of the extent of doping in these samples and thereby elucidate the origin of unusual shifts of their Raman G bands in contrast to electrochemically doping schemes. In conclusion, we investigate, in this thesis, properties of different classes of compounds in presence of distinctly different kinds of disorder and establish the critical role of disorder in each case in tuning their desirable physical properties.

In recent years, there is an urgent need for the development of lead-free alternative ferroelectrics to replace the most dominant lead-based ferroelectrics (e.g., Lead zirconate titanate (PZT)) due to the toxicity of lead. Sodium bismuth titanate (Na0.5Bi0.5)TiO3 (NBT) based erroelectrics are supposed to be the future materials for solid state electronics devices because of their relatively high Curie temperatures and high remnant polarization among the non-lead ferroelectrics. The present work deals with the synthesis and analysis of the electrical properties of NBT based lead free ferroelectric materials with suitable substitution at A and B sites.In this context, the systematic studies of lanthanum (La) / yttrium (Y) and zirconium (Zr) substitution at A and B sites of NBT have been undertaken through structural, dielectric and impedance spectroscopy studies. NBT and modified NBT samples were synthesized by conventional solid state reaction route. The desired phase and crystal structure formation of the synthesized materials were confirmed by X-ray diffraction (XRD) analysis. The preliminary XRD analysis of the material revealed rhombohedral crystal system with hexagonal axis. The scanning electron micrographs (SEM) were taken at different magnifications to visualize the microstructure (grain size, grain distribution, voids etc.) of the materials. The appearance of the characteristic peak of BO6 octahedra in FTIR spectrum confirms the formation of perovskite phase.

碩士
國立聯合大學
能源工程學系碩士班
105
The objective of this thesis is to make fingerprint Identification Model enabling identify fingerprints in a short time by the Preparation and Characterization of high dielectric constant composite. It’s applied in fingerprint recognition. La-Sr-Ni oxides were synthesized in the manner of polyol process.This text is divided into three parts and examined mainly. First, mixed La-Sr-Ni oxides with thermoset epoxy. By dielectric property measurement,we found the composites with maximum dielectric constant, applied it to the ielectric layer of fingerprint recognition. Then, X - ray diffraction (XRD) was used to test the crystal structure and species of dielectric ceramic powder. Finally, the use of fingerprint recognition to do fingerprint imaging detection. The results show that when the Mole fractions of La-Sr-Ni oxides was 1: 3: 1, the synthesized powder obtained contains the La1.5Sr0.5NiO4 and NiO at the same time, it has the best dielectric constant, and also has a best performance in the fingerprint recognition.

Bismuth layer-structured ferroelectrics have received significant attention recently due to their fairly high TC and good fatigue endurance which make them important candidates for non-volatile ferroelectric random access memories (Fe-RAMs) as well as for the piezoelectric device applications at high temperatures. Structure of these compounds is generally described as the pseudo-perovskite block (An-1BnO3n+1)2- sandwiched between the bismuth oxide layers (Bi2O2)2+ along the c-axis, where n represents the number of corner sharing BO6 octahedra forming the perovskite-like slabs. Only a few compounds belonging to this family show relaxor behavior (frequency dependent diffuse phase transition). Relaxor ferroelectrics are very attractive for a variety of applications, such as capacitors, sensors, actuators, and integrated electromechanical systems. The present work attempts to understand the mechanism of relaxor behavior in Aurivillius oxides as well as to improve the piezoelectric and ferroelectric properties of some of the known phases. Details pertaining to the fabrication and characterization of BaBi4Ti4O15 (n = 4 member of Aurivillius family of oxides) ceramics are presented. X-ray diffraction, Raman spectroscopy, Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) were employed to probe the structural and microstructural details. The contribution of irreversible domain wall movement to the room temperature dielectric constant and polarization was quantitatively evaluated using the nonlinear dielectric response. Dielectric dispersion and conduction mechanism of these ceramics are also explicated using the complex impedance spectroscopy. The effects of La3+ and Ca2+ doping on the phase transition behavior and other properties of BaBi4Ti4O15 are investigated. La3+ doping for Bi3+ was found to strengthen the relaxor behavior. New compounds such as CaNaBi2Nb3O12, SrNaBi2Nb3O12, Na0.5La0.5Bi4Ti4O12, etc. belonging to the Aurivillius family of oxides have been synthesized and investigations concerning their structural, dielectric and ferroelectric properties are presented. Rietveld refinement of room temperature X-ray powder data suggested that CaNaBi2Nb3O12 and SrNaBi2Nb3O12crystallize in the orthorhombic space group B2cb. SrNaBi2Nb3O12 ceramics exhibited frequency-dependent Tm which follows the Vogel-Fulcher relation implying a relaxor nature. No frequency dependence of Tm was observed for CaNaBi2Nb3O12 ceramics. Polarization - electric field hysteresis loops recorded well above Tm confirmed the coexistence of polar and non-polar domains in SrNaBi2Nb3O12 ceramics. Dielectric anomaly observed around 675 K for CNBN corresponds to the ferroelectric to paraelectric phase transition which is accompanied by the change in crystal structure from orthorhombic to tetragonal. Fe and Nb co-doped Bi4Ti3O12 ceramics were fabricated and characterized for their structural, electrical and magnetic properties.

Bismuth layer-structured ferroelectrics have received significant attention recently due to their fairly high TC and good fatigue endurance which make them important candidates for non-volatile ferroelectric random access memories (Fe-RAMs) as well as for the piezoelectric device applications at high temperatures. Structure of these compounds is generally described as the pseudo-perovskite block (An-1BnO3n+1)2- sandwiched between the bismuth oxide layers (Bi2O2)2+ along the c-axis, where n represents the number of corner sharing BO6 octahedra forming the perovskite-like slabs. Only a few compounds belonging to this family show relaxor behavior (frequency dependent diffuse phase transition). Relaxor ferroelectrics are very attractive for a variety of applications, such as capacitors, sensors, actuators, and integrated electromechanical systems. The present work attempts to understand the mechanism of relaxor behavior in Aurivillius oxides as well as to improve the piezoelectric and ferroelectric properties of some of the known phases. Details pertaining to the fabrication and characterization of BaBi4Ti4O15 (n = 4 member of Aurivillius family of oxides) ceramics are presented. X-ray diffraction, Raman spectroscopy, Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) were employed to probe the structural and microstructural details. The contribution of irreversible domain wall movement to the room temperature dielectric constant and polarization was quantitatively evaluated using the nonlinear dielectric response. Dielectric dispersion and conduction mechanism of these ceramics are also explicated using the complex impedance spectroscopy. The effects of La3+ and Ca2+ doping on the phase transition behavior and other properties of BaBi4Ti4O15 are investigated. La3+ doping for Bi3+ was found to strengthen the relaxor behavior. New compounds such as CaNaBi2Nb3O12, SrNaBi2Nb3O12, Na0.5La0.5Bi4Ti4O12, etc. belonging to the Aurivillius family of oxides have been synthesized and investigations concerning their structural, dielectric and ferroelectric properties are presented. Rietveld refinement of room temperature X-ray powder data suggested that CaNaBi2Nb3O12 and SrNaBi2Nb3O12crystallize in the orthorhombic space group B2cb. SrNaBi2Nb3O12 ceramics exhibited frequency-dependent Tm which follows the Vogel-Fulcher relation implying a relaxor nature. No frequency dependence of Tm was observed for CaNaBi2Nb3O12 ceramics. Polarization - electric field hysteresis loops recorded well above Tm confirmed the coexistence of polar and non-polar domains in SrNaBi2Nb3O12 ceramics. Dielectric anomaly observed around 675 K for CNBN corresponds to the ferroelectric to paraelectric phase transition which is accompanied by the change in crystal structure from orthorhombic to tetragonal. Fe and Nb co-doped Bi4Ti3O12 ceramics were fabricated and characterized for their structural, electrical and magnetic properties.

Relaxor ferroelectrics have been a subject of intense research owing to their interesting physical properties such as high dielectric constant and giant electro-striction. Unlike the conventional lead based relaxors, the relaxors belonging to Aurivillius family of oxides have received much less attention because of the poor understanding of the origin of the relaxor behavior and high processing temperatures involved. In the present investigations, an attempt has been made to understand the origin of relaxor behavior of the materials belonging to Aurivillius family of oxides. The structure and relaxor behavior of BaBi2Nb2O9 (BBN) has been established via the XRD, electron diffraction and dielectric spectroscopy. The results are compared with that of a normal ferroelectric like SrBi2Nb2O9 belonging to the same family as well with that of a conventional relaxor like PMN. The results indicate that the dielectric behavior of BBN is significantly different from that of the conventional relaxors like BBN with very slow broadening of relaxation times and was attributed to the absence of significant polar ordering. To substantiate the existing understanding, studies have been carried out by adopting different strategies such as B-site and A-site cationic substitutions and texturing of the ceramics. Vanadium doping on B-site was found to decrease the sintering temperatures significantly. Aliovalent La3+ doping was found to affect the dielectric behavior strongly with substantial decrease of the freezing temperature and dielectric constants which shows that the relaxor behavior of BBN is highly sensitive to A-site order-disorder. The (00l) textured ceramic of pure and vanadium doped BBN was fabricated via a simple melt-quenching technique and was found to exhibit a significant dielectric and pyroelectric anisotropy. A new class of relaxor compositions (K0.5La0.5Bi2Nb2O9 & K0.5La0.5Bi2Ta2O9) have been synthesized and characterized. These new compounds exhibited interesting physical properties which are akin to that of the conventional lead based relaxors. The presence of superlattice reflections in the electron diffractin patterns recorded on these compounds establish the presence of polar nano regions of significant size. These relaxor crystallites at nano/micro level embedded in a glass matrix have been found to be very promising from their physical properties view point.

Relaxor ferroelectrics have been a subject of intense research owing to their interesting physical properties such as high dielectric constant and giant electro-striction. Unlike the conventional lead based relaxors, the relaxors belonging to Aurivillius family of oxides have received much less attention because of the poor understanding of the origin of the relaxor behavior and high processing temperatures involved. In the present investigations, an attempt has been made to understand the origin of relaxor behavior of the materials belonging to Aurivillius family of oxides. The structure and relaxor behavior of BaBi2Nb2O9 (BBN) has been established via the XRD, electron diffraction and dielectric spectroscopy. The results are compared with that of a normal ferroelectric like SrBi2Nb2O9 belonging to the same family as well with that of a conventional relaxor like PMN. The results indicate that the dielectric behavior of BBN is significantly different from that of the conventional relaxors like BBN with very slow broadening of relaxation times and was attributed to the absence of significant polar ordering. To substantiate the existing understanding, studies have been carried out by adopting different strategies such as B-site and A-site cationic substitutions and texturing of the ceramics. Vanadium doping on B-site was found to decrease the sintering temperatures significantly. Aliovalent La3+ doping was found to affect the dielectric behavior strongly with substantial decrease of the freezing temperature and dielectric constants which shows that the relaxor behavior of BBN is highly sensitive to A-site order-disorder. The (00l) textured ceramic of pure and vanadium doped BBN was fabricated via a simple melt-quenching technique and was found to exhibit a significant dielectric and pyroelectric anisotropy. A new class of relaxor compositions (K0.5La0.5Bi2Nb2O9 & K0.5La0.5Bi2Ta2O9) have been synthesized and characterized. These new compounds exhibited interesting physical properties which are akin to that of the conventional lead based relaxors. The presence of superlattice reflections in the electron diffractin patterns recorded on these compounds establish the presence of polar nano regions of significant size. These relaxor crystallites at nano/micro level embedded in a glass matrix have been found to be very promising from their physical properties view point.

Multiferroic materials are a very exotic type of materials which present simultaneously two or more ferroic properties. Magnetoelectric multiferroics, in particular, are a very prominent class of materials, mainly due to their outstanding foreseen applications such as magnetic sensors, energy harvester/conversion devices, and high efficiency memories. However, intrinsic magnetoelectric materials are quite rare and do not have, yet, the adequate properties to the everyday applications. One of the reasons for this to occur is due to the requirements for magnetism and ferroelectricity in matter being a priori contradictory, since the former needs unfilled dn orbitals, while the latter favours d0 orbitals. Nevertheless, extrinsic magnetoelectric multiferroics do not suffer from this problem because they do not share the same phase, hence being a very promising approach to engineer adequate magnetoelectric multiferroics. This thesis focus on the study of Fe and BaTiO3 systems as a means of achieving novel magnetoelectric effects. It is shown that a peculiar type of BaTiO3:Fe auto-composite presents an ordered magnetic behaviour, despite the concentration of Fe being as low as 113 atomic ppm. The Fe magnetization displays two abrupt changes in its spontaneous value, one with M/M ≈ 32% and the other with M/M ≈ 14%. These magnetic transitions are correlated the BaTiO3 orthorhombic↔tetragonal and tetragonal↔cubic ferroelectric phase transitions. This magnetoelectric auto-composite was the motivation to resort to Density Functional Theory (DFT) modeling as a means to discover the microscopic mechanism(s) behind such a strong magnetoelectric effect. The study of an iron monolayer placed upon several possible BaTiO3 unit cells lead to the discovery of several interfaces with abrupt changes in their spontaneous magnetization, either through the enhancement and reduction of the Fe magnetic moments, or through the change between antiferromagnetic and ferromagnetic order of the Fe monolayer. However, the highlight of these DFT studies lies in the discovery of a particular kind of interfaces, namely in the BTO221_2ndFe and BTO99_2ndFe supercells, where there is a High-Spin–Low-Spin state transition which can quench completely the atomic magnetic moment of each of Fe atom, depending on the local crystal field felt by the Fe atoms. Based on this specific effect, where it is possible to turn on and off the magnetic moments of the Fe atoms, a magnetoelectric multiferroic device was proposed. Knowing the importance of the crystal field for the High-Spin–Low-Spin state transition, a thorough study regarding the Electric Field Gradient (EFG) of each possible BaTiO3 site was performed, resorting to a combined study of DFT and Perturbed Angular Correlations (PAC) spectroscopy. In this study, it was concluded that the PAC spectroscopy is not the most adequate hyperfine technique to be used in a quantitative study of the BaTiO3/Fe interfaces EFG tensor, due to the non-negligible effects of the radioactive probe on the BaTiO3 matrix. Finally, the deposition of BTO/Fe heterostructures on LaAlO3, MgO, Al2O3 and SrTiO3 substrates using RF-Sputtering, and the Molecular Beam Epitaxy (MBE) deposition of Fe layers on BaTiO3 cut at the (100), (110) and (111) planes were performed as an attempt to recreate the interfaces with the most appealing magnetoelectric effects predicted in the DFT modeling. The thin films deposited using sputtering showed the growth of many Fe, Ba-Ti-O and Fe-Ti-O oxides depending strongly on their substrate, as well as in the deposition and annealing conditions. Still no magnetoelectric coupling was observed in such thin films. On the other hand the Fe thin films deposited on BaTiO3 substrates showed large magnetoelectric couplings between the BaTiO3 ferroelectric phase transitions and the magnetization of the Fe layers (similarly to what happened in the BaTiO3:Fe auto-composite). The magnitude of this magnetoelectric couplings is strongly correlated with the BTO interface where the Fe was deposited, showing a huge change in spontaneous magnetization and coercivity for the rhombohedral↔orthorhombic ferroelectric phase transition up to M/M ≈ 148% and HC/HC ≈ 183% respectively for the (110) case.
Materiais Multiferróicos são um tipo de materiais bastante exótico que apresentam simultaneamente dois ou mais tipos de propriedades ferróicas. Multiferróicos magnetoelétricos, em particular, são uma classe de materiais muito proeminente, principalmente devido às suas espantosas aplicações tecnológicas, tais como sensores magnéticos, dispositivos de conversão/colheita de energia, e memórias the alta eficiência. Todavia, materiais magnetoelétricos intrínsecos são verdadeiramente raros e ainda não possuem propriedades adequadas ao uso do dia-a-dia. Uma das razões para que isto aconteça prende-se com o facto dos requisitos para existência de magnetismo e ferroeletricidade na matéria serem a priori contraditórios, uma vez que enquanto os primeiros necessitam de orbitais dn semipreenchidas, os últimos tendem a favorecer orbitais d0. Porém, Multiferróicos magnetoelétricos extrínsecos não sofrem desta limitação pois não partilham a mesma fase sendo portanto uma abordagem promissora para a construção de um bom Multiferróico magnetoelétrico. Esta tese focar-se-á no estudo de sistemas contendo Fe e BaTiO3 como meio de se alcançarem novos efeitos magnetoelétricos. Um auto-compósito de BaTiO3:Fe é apresentado, que apesar da sua diminuta concentração de Fe (apenas 113 ppm atómicas), ainda assim apresenta um comportamento magnético ordenado. A magnetização do Fe apresenta duas variações bruscas no seu valor espontâneo, uma com M/M ≈ 32% e outra com M/M ≈ 14%. Estas transições magnéticas estão correlacionadas com as transições de fase ferroelétricas do BaTiO3 (ortorrômbica↔tetragonal e tetragonal↔cúbica). Este auto-compósito magnetoelétrico foi a motivação par ao uso da Teoria de Densidade Funcional (DFT) como meio para descobrir os mecanismos microscópicos por trás deste acoplamento magnetoelétrico tão intenso. O estudo de uma mono-camada de Fe colocada sobre várias células unitárias de BaTiO3 levaram à descoberta de várias interfaces com mudanças abruptas na sua magnetização espontânea, ora através do aumento ou diminuição dos momentos magnéticos do Fe, ora através da mudança entre a natureza antiferromagnética ou ferromagnética da camada de Fe. Contudo, o destaque dos estudos de DFT reside na descoberta de um tipo particular de interfaces onde ocorre uma transição de estado High-Spin–Low-Spin que consegue colapsar completamente o momento magnético atómico dos átomos de Fe, dependendo do campo cristalino local sentido por esses mesmos átomos. Baseado neste efeito, um dispositivo Multiferróico magnetoelétrico foi proposto. Sabendo a importância do campo cristalino para as transições de estado High-Spin–Low-Spin state, um estudo minucioso foi feito relativo ao gradiente de campo elétrico (EFG) nos sítios possíveis do BaTiO3, usando um estudo combinado entre Correlações Angulares Perturbadas (PAC) e DFT. Neste estudo, concluiu-se que PAC não é uma técnica hiperfina adequada para o estudo quantitativo do tensor EFG de interfaces de BaTiO3/Fe, dados os efeitos não desprezáveis das sondas radioativas na matriz de BaTiO3. Finalmente, foi feita a deposição de Heteroestruturas de BTO/Fe em substratos de LaAlO3, MgO, Al2O3 e SrTiO3 usando RF-Sputtering, assim como deposição de camadas de Fe em substratos de BaTiO3 cortados nos planos (100), (110) e (111) planes, usando Molecular Beam Epitaxy (MBE), numa tentativa de recrear as interfaces com efeitos magnetoelétricos mais apelativos, previstos pela modelação DFT. Os filmes finos depositados por sputtering mostraram o crescimento de múltiplos óxidos de Fe, Ba-Ti-O e Fe-Ti-O dependendo fortemente do substrato onde foram crescidos, assim como das condições de deposição e tratamentos térmicos. Porém, nenhum efeito magnetoelétrico foi observado nestes filmes. Por outro lado, os filmes depositados nos substratos de BaTiO3 mostraram grandes acoplamentos magnetoelétricos entre as fases ferroelétricas do BTO e a magnetização das camadas de Fe (à semelhança do que aconteceu no auto-compósito de BaTiO3:Fe). A ordem de grandeza destes acoplamentos está fortemente correlacionada com a interface do BTO onde o Fe foi depositado, apresentando uma enorme variação na magnetização espontânea e na coercividade para o caso da transição romboédrica↔ortorrômbica, até M/M ≈ 148% e HC/HC ≈ 183% respetivamente para o caso da orientação (110).
Tese realizada com apoio financeiro da FCT através da bolsa SFRH/BD/93336/2013.
Programa Doutoral em Física