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Artykuły w czasopismach na temat „Multiband doherty power amplifier”

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Data publikacji: 6 września 2023

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1

Wiegner, Dirk, Gerhard Luz, Patrick Jüschke, Robin Machinal, Thomas Merk, Ulrich Seyfried, Wolfgang Templ, Andreas Pascht, Rüdiger Quay i Friedbert Van Raay. "AlGaN/GaN-based power amplifiers for mobile radio applications: a review from the system supplier's perspective". International Journal of Microwave and Wireless Technologies 2, nr 1 (luty 2010): 95–104. http://dx.doi.org/10.1017/s175907871000022x.

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This paper gives a summarized overview on the progress and achievements on AlGaN/GaN high electron mobility transistors (HEMT)-based power amplifiers (PAs) for mobile radio applications which have been achieved within two national funded German projects during a period of six years. Starting with a first 34 dBm (2.5 W, peak) amplifier in 2003 the impressive progress toward highly efficient S-band mobile radio PAs with up to >50 dBm (100 W) peak output power is described by means of some selected single- and multiband amplifier demonstrators. This progress has been mainly enabled by clear progress on GaN technology, device packaging, and PA design. Targeting at highly efficient single-band amplifier applications, a 2.7 GHz symmetrical Doherty amplifier with up to 45% drain efficiency at close to 45 dBm average output power under single-carrier W-CDMA (Wideband Code Division Multiple Access) operation using digital predistortion can be highlighted. In case of multiband capable amplifiers addressing software-defined radio applications, a class-AB-based demonstrator covering a frequency range from 1.8 to 2.7 GHz was realized. The amplifier showed >30% drain efficiency up to 2.5 GHz as well as up to 40 dBm average output power under single-carrier W-CDMA operation using proprietary digital predistortion. Finally, Alcatel-Lucent's activities on envelope tracking for future efficiency improved GaN-based amplifiers are described.

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2

Kalyan, Robin, Karun Rawat i Shiban K. Koul. "Reconfigurable and Concurrent Dual-Band Doherty Power Amplifier for Multiband and Multistandard Applications". IEEE Transactions on Microwave Theory and Techniques 65, nr 1 (styczeń 2017): 198–208. http://dx.doi.org/10.1109/tmtt.2016.2614930.

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3

Nghiem, Xuan Anh, Junqing Guan, Thomas Hone i Renato Negra. "Design of Concurrent Multiband Doherty Power Amplifiers for Wireless Applications". IEEE Transactions on Microwave Theory and Techniques 61, nr 12 (grudzień 2013): 4559–68. http://dx.doi.org/10.1109/tmtt.2013.2281959.

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4

Pang, Jingzhou, Zhijiang Dai, Yue Li, Meng Li i Anding Zhu. "Multiband Dual-Mode Doherty Power Amplifier Employing Phase Periodic Matching Network and Reciprocal Gate Bias for 5G Applications". IEEE Transactions on Microwave Theory and Techniques 68, nr 6 (czerwiec 2020): 2382–97. http://dx.doi.org/10.1109/tmtt.2020.2971481.

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5

Kim, Bumman, Jangheon Kim, Ildu Kim i Jeonghyeon Cha. "The Doherty power amplifier". IEEE Microwave Magazine 7, nr 5 (październik 2006): 42–50. http://dx.doi.org/10.1109/mw-m.2006.247914.

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6

Qi, Xiaobo, i Fei Xiao. "Filtering Doherty power amplifier". IET Microwaves, Antennas & Propagation 14, nr 10 (29.05.2020): 1074–78. http://dx.doi.org/10.1049/iet-map.2019.0835.

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7

Vorapipat, Voravit, Cooper S. Levy i Peter M. Asbeck. "Voltage Mode Doherty Power Amplifier". IEEE Journal of Solid-State Circuits 52, nr 5 (maj 2017): 1295–304. http://dx.doi.org/10.1109/jssc.2017.2647954.

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8

Osman Luhaib, Saad Wasmi. "Design of a Doherty Power Amplifier for GSM Systems". Tikrit Journal of Engineering Sciences 18, nr 3 (30.09.2011): 61–67. http://dx.doi.org/10.25130/tjes.18.3.07.

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This paper presents the design and analysis of Doherty power amplifier. The Doherty amplifier is used in a base station for mobile system because of its high efficiency. The class AB power amplifier used in the configuration of the main and auxiliary amplifier. The result obtained shows that the Doherty power amplifier can be used on a wide band spectrum, the amplifier works at 900MHz and has very good power added efficiency (PAE) and gain. The amplifier can also work at 1800MHz at input power greater than 20dBm.

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9

Xi, Wang, Yu Shi, Shao Lin Yang i Jun Li. "Doherty Power Amplifier with Dynamic Power Dividing Network for Enhanced Efficiency". Applied Mechanics and Materials 721 (grudzień 2014): 560–63. http://dx.doi.org/10.4028/www.scientific.net/amm.721.560.

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In this paper, we present a high efficiency Doherty power amplifier (PA) employing dynamic power dividing network which automatically adjusts the input power division ratio in accordance with the level of input power to enhance efficiency. Doherty PA circuit parameters of each amplifier are determined by basic performance analysis according to the datasheet. Simulated circuits through Advanced Design System (ADS) exhibit an improvement of 4% at a 6 dB backoff point from its saturated output power (PSAT) than that of a conventional Doherty PA. Implemented Doherty PA using two Freescale MRF6S27015N laterally diffused metal oxide semiconductor (LDMOS) field-effect transistors (FETs) achieves excellent drain efficiency of 46.5% at a 6 dB backoff point from PSAT, which is 2% higher than conventional Doherty PA.

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10

Chun, S. H., D. H. Jang, J. Y. Kim i J. H. Kim. "Inverted asymmetric Doherty power amplifier driven by two-stage symmetric Doherty amplifier". Electronics Letters 46, nr 17 (2010): 1208. http://dx.doi.org/10.1049/el.2010.1708.

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11

Choi, Hojong. "A Doherty Power Amplifier for Ultrasound Instrumentation". Sensors 23, nr 5 (21.02.2023): 2406. http://dx.doi.org/10.3390/s23052406.

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The ultrasound instrumentation uses linear power amplifiers with low power efficiency, generating unwanted heat and resulting in the deterioration of the echo signal quality of measured targets. Therefore, this study aims to develop a power amplifier scheme to increase power efficiency while maintaining appropriate echo signal quality. In communication systems, the Doherty power amplifier has shown relatively good power efficiency while producing high signal distortion. The same design scheme cannot be directly applied to ultrasound instrumentation. Therefore, the Doherty power amplifier needs to be re-designed. To verify the feasibility of the instrumentation, a Doherty power amplifier was designed to obtain high power efficiency. The measured gain, output 1-dB compression point, and power-added efficiency of the designed Doherty power amplifier were 33.71 dB, 35.71 dBm, and 57.24% at 25 MHz, respectively. In addition, the performance of the developed amplifier was measured and tested using the ultrasound transducer through the pulse-echo responses. The output power with 25 MHz, 5-cycle, and 43.06 dBm generated from the Doherty power amplifier was sent through the expander to the focused ultrasound transducer with 25 MHz and 0.5″ diameter. The detected signal was sent via a limiter. Afterwards, the signal was amplified by a 36.8 dB gain preamplifier, and then displayed in the oscilloscope. The measured peak-to-peak amplitude in the pulse-echo response with an ultrasound transducer was 0.9698 V. The data showed a comparable echo signal amplitude. Therefore, the designed Doherty power amplifier can improve the power efficiency used for medical ultrasound instrumentation.

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12

Barmala, Ehsan. "Design and simulate a doherty power amplifier using GaAs technology for telecommunication applications". Indonesian Journal of Electrical Engineering and Computer Science 15, nr 2 (1.08.2019): 845. http://dx.doi.org/10.11591/ijeecs.v15.i2.pp845-854.

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<span>In this paper, a Doherty power amplifier was designed and simulated at 2.4 GHz central frequency which has high efficiency. A Doherty power amplifier is a way to increase the efficiency in the power amplifiers. OMMIC ED02AH technology and PHEMT transistors, which is made of gallium arsenide, have been used in this simulation. The Doherty power amplifier unique feature is its simple structure which is consisting of two parallel power amplifiers and transmission lines. In order to integrate the circuit, the Doherty power transmission amplifier lines were implemented using an inductor and capacitive components. Also, the Wilkinson power divider is used on the chip input. To improve the efficiency, the auxiliary amplifier dimensions is selected enlarge and the further input power is allocated it by the power divider. A parallel R-C circuit has been used at the input of transistors to improve their stability. Simulation results show that the Doherty power amplifier has 17.2 dB output power gain, 23 dBm maximum output power, and its output power P<sub>1dB</sub> =22.6dBm at compression point -1 dB, also, its maximum efficiency is 55.5%.</span>

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13

Shi, Weimin, i Songbai He. "Design of a Tri-Band Doherty Amplifier Based on Generalized Impedance Inverter". Journal of Circuits, Systems and Computers 28, nr 10 (wrzesień 2019): 1950170. http://dx.doi.org/10.1142/s0218126619501706.

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This paper introduces a methodology for implementing multi-band Doherty power amplifiers. Traditionally, a 90∘ impedance inverter line is required in Doherty architecture. In this contribution, a generalized impedance inverter line is utilized to construct multi-band Doherty power amplifiers. A tri-band Doherty power amplifier operating at 1.15, 1.85 and 2.55[Formula: see text]GHz is designed to validate the proposed method. Measurement results show the fabricated Doherty power amplifier achieves 6[Formula: see text]dB output back-off drain efficiencies of 62.3%, 49.3% and 50.5% at 1.15, 1.85 and 2.55[Formula: see text]GHz, respectively. The peaking output power of the fabricated tri-band Doherty power amplifier is 43.2, 43.7 and 43.8[Formula: see text]dBm with drain efficiencies of 64.5%, 62.2% and 64.5% at three working frequency points, respectively. Furthermore, when the designed Doherty power amplifier is driven by a 20[Formula: see text]MHz wideband LTE signal with peak-to-average-power ratio of 6.4[Formula: see text]dB, adjacent channel power ratios of [Formula: see text]29.4 and [Formula: see text]57.1[Formula: see text]dBc are achieved before and after digital pre-distortion at 1.85[Formula: see text]GHz.

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14

Chen, Jun, Hua Wei Yang i Kai Xiong Su. "Simulation of Four-Stage Doherty Power Amplifier Structure". Applied Mechanics and Materials 278-280 (styczeń 2013): 1095–98. http://dx.doi.org/10.4028/www.scientific.net/amm.278-280.1095.

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In order to improve the efficiency of Digital TV transmitter, we uses a new type of four-stage Doherty structure. Based on the transmission line theory and active loadpull theory, we deduce the principle of the four-stage Doherty structure, and use ADS to design a four-stage Doherty power amplifier. The simulation result shows that this four-stage Doherty PA has an efficiency of 34% at 6dB back-off (53dBm) for DVB-T OFDM 64 QAM modulated signal. The ACPR and MER obtained at 53dBm when output power are 31dBc and 28dB respectively.

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15

Yoon, Hong-Sun, Min-Soo Park, Jong-Min Yook, Dongsu Kim i Youngcheol Park. "Compact Asymmetrical Quasi-MMIC Doherty Power Amplifier". Journal of Electromagnetic Engineering and Science 23, nr 4 (31.07.2023): 381–83. http://dx.doi.org/10.26866/jees.2023.4.l.15.

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This paper presents a compact asymmetrical Doherty power amplifier (PA) based on a quasi-MMIC configuration for 5G sub-6 GHz applications. The proposed Doherty PA is composed of commercial GaN HEMTs and several passive components implemented on a silicon (Si) substrate. In order to achieve size and cost advantages, passive components such as a power divider, input matching networks, output matching networks, and a Doherty combiner are realized using Si-integrated passive device (Si-IPD) technology, which costs about 40% of the budget for the entire GaN MMIC process. For the 3.5 GHz pulsed-continuous waveform signal, the fabricated Doherty PA has an efficiency of 52.6% at a saturated output power of 44.2 dBm. Furthermore, an efficiency of 45.6% was achieved with the output power back-off (OBO) of 7.0 dB. The implemented PA occupies only 8.9 mm × 5.6 mm.

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16

Thian, Mury, i Peter Gardner. "Envelope-tracking-based Doherty power amplifier". International Journal of Electronics 97, nr 5 (maj 2010): 525–30. http://dx.doi.org/10.1080/00207210903486831.

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17

Bathich, Khaled, i Georg Boeck. "Design and analysis of 80-W wideband asymmetrical Doherty amplifier". International Journal of Microwave and Wireless Technologies 7, nr 1 (1.04.2014): 13–18. http://dx.doi.org/10.1017/s1759078714000452.

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This paper presents the analysis and design of a wideband asymmetrical Doherty amplifier. The frequency response of the output combining network of the Doherty amplifier with arbitrary back-off level configuration is analyzed. Other bandwidth-limiting factors were discussed and analyzed as well. A number of performance enhancement techniques were taken into consideration to obtain high and flat back-off efficiency over the amplifier design band of 1.7–2.25 GHz. The designed Doherty amplifier had, at 8.0–9.9 dB output back-off, a minimum efficiency of η = 50% [power-added efficiency of 45%], measured near 40 dBm of output power, and over 28% bandwidth. Using digital predistortion (DPD) linearization, an adjacent-channel leakage ratio (ACLR) of −43 dBc was obtained for a single-carrier W-CDMA signal, at 40.9 dBm and 46% of average output power and drain efficiency, respectively. The designed amplifier represents the first wideband Doherty amplifier reported over extended power back-off range.

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18

Li, Guojin, i Yewen Wang. "Design of Broadband High-Efficiency DPA for 5G Micro Base Station". Journal of Physics: Conference Series 2517, nr 1 (1.06.2023): 012005. http://dx.doi.org/10.1088/1742-6596/2517/1/012005.

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Abstract To meet the requirements of the 5G communication system, the Doherty power amplifier has become a research hotspot because of its peak-to-average ratio and high backoff efficiency. At the same time, with the continuous development of mobile communication technology, the traditional Doherty power amplifier has gradually been difficult to meet the needs due to its structural problems. On the one hand, due to the limitation of the 1/4 wavelength transmission line in the traditional Doherty power amplifier, it is difficult to achieve broadband. This paper uses the post-matching technology to remove the 1/4 wavelength transmission line to achieve broadband matching. On the other hand, in response to energy conservation and emission reduction, there is a growing demand to reduce power consumption in base stations. In this design, a harmonic suppression network is introduced at the output matching end to further improve the efficiency of the Doherty power amplifier. Finally, the asymmetric structure is introduced to further improve the efficiency of the power amplifier. Main and auxiliary power amplifier transistors select Cree CGH40010F and CGH40025 respectively. Based on the ADS simulation design and test, a broadband high-efficiency Doherty amplifier working in a 3.3~3.6 GHz band is designed for a 5G communication base station. The maximum saturated output power is 44.5 dBm and the drain efficiency is 67%~73%. When power fallback is 8 dB, the drain efficiency is 43%~51%.

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19

Parisi, Alessandro, Giuseppe Papotto, Claudio Nocera, Alessandro Castorina i Giuseppe Palmisano. "A Ka-Band Doherty Power Amplifier in a 150 nm GaN-on-SiC Technology for 5G Applications". Electronics 12, nr 17 (29.08.2023): 3639. http://dx.doi.org/10.3390/electronics12173639.

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This paper presents a Ka-band three-stage power amplifier for 5G communications, which has been implemented in a 150 nm GaN-on-SiC technology and adopts a Doherty architecture. The amplifier is made up of a 50 Ω input buffer, which drives a power splitter, thanks to which it delivers its output power to the two power amplifier units of the Doherty topology, namely the main and auxiliary amplifier. Finally, the outputs of the two power amplifiers are properly arranged in a current combining scheme that enables the typical load modulation of the Doherty architecture, alongside allowing power combining at the final output. The proposed amplifier achieves a small signal gain of around 30 dB at 27 GHz, while providing a saturated output power of 32 dBm, with a power-added efficiency (PAE) as high as 26% and 18% at peak and 6 dB output power back-off, respectively.

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Kim, Jangheon, Junghwan Son, Junghwan Moon i Bumman Kim. "A Saturated Doherty Power Amplifier Based On Saturated Amplifier". IEEE Microwave and Wireless Components Letters 20, nr 2 (luty 2010): 109–11. http://dx.doi.org/10.1109/lmwc.2009.2038554.

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Park, Yunsik, Juyeon Lee, Seokhyeon Kim, Donggyu Minn i Bumman Kim. "Analysis of Average Power Tracking Doherty Power Amplifier". IEEE Microwave and Wireless Components Letters 25, nr 7 (lipiec 2015): 481–83. http://dx.doi.org/10.1109/lmwc.2015.2429071.

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Santhanam, Suganthi, i Palavesam Selvan. "New Approach of Efficiency Improvement in 10 dB Doherty Power Amplifier for 4G LTE and 5G Wireless Applications". Applied Computational Electromagnetics Society 36, nr 4 (10.05.2021): 379–85. http://dx.doi.org/10.47037/2020.aces.j.360403.

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In this research article, the design procedure and comparative analysis of the 10 dB Doherty power amplifier (DPA) with single and double auxiliary amplifier for maximum efficiency has been presented. A new Doherty amplifier structure with parallel two auxiliary amplifiers based on conventional design having optimum value of load resistance of 3.162 ohm has been proposed with higher efficiency of 85.803% and analyzed with n-tone sinusoidal signal. The proposed Doherty power amplifier can achieve drain efficiency of 83.299% & with single and 85.803% with dual auxiliary amplifier at the output power back, off of 10 dB from the saturated power point. The simulated outputs are matched with mathematically derived design values. The simulated n-tone time response shows that the proposed design of DPA can able to handle different modulation standards at different frequencies with compatible structure.

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Liu, Yang, i Huai Bao Xiao. "Design and Simulation of an Improved Doherty Power Amplifier". Applied Mechanics and Materials 496-500 (styczeń 2014): 1109–12. http://dx.doi.org/10.4028/www.scientific.net/amm.496-500.1109.

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This work presents theory, design and simulation of an improved power amplifier based on the Doherty topology. It is theoretically shown that, by using multiple iterations of the source-pull and the load-pull in the platform of ADS with a Doherty power amplifier topology, the proposed amplifier can provide higher efficiency both at full output power and at back-off power, thus validating practical effects of the design and demonstrating a promising prospect of the design to be used in the future wireless transmitter applications.

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Donati Guerrieri, Simona, Eva Catoggio i Fabrizio Bonani. "Analysis of Doherty Power Amplifier Matching Assisted by Physics-Based Device Modelling". Electronics 12, nr 9 (4.05.2023): 2101. http://dx.doi.org/10.3390/electronics12092101.

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The Doherty Power Amplifier represents one of the most promising solutions for the design of high-efficiency power stages. In the widely adopted ABC scheme, the Doherty Amplifier design critically depends on the accuracy of the device model in different operating conditions, ranging from class AB to class C. For the class C case, library models are often inaccurate, while experimental characterization is difficult since it must be carried out in large signal conditions and with varying gate bias. In this paper, we propose an alternative approach, based on physics-based Technological CAD (TCAD) simulations of the complete Doherty amplifier along with the analysis of its individual MAIN (class AB) and AUXILIARY (class C) stages. TCAD simulations seamlessly provide an accurate modelling of the device behavior in all operation classes, including the device turn-on and the nonlinear capacitances, and easily account for the cross-loading effects of the MAIN and AUXILIARY devices through the output network and the effect of the device feedback (gate-drain) capacitance on the input matching. Analyzing a GaAs Doherty stage at 12 GHz, we show that the input phase of the auxiliary stage can be exploited for the Doherty power amplifier optimization in terms of gain, linearity and efficiency, showing a 9 dB gain with less than 1 dB gain variation from back-off to peak power with a power-added efficiency exceeding 45% over a Doherty region extending to a more than 6 dB output power back-off.

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Saurabh, Peddi, Poornima Asuti i Prof Deepika P. "A Review of Efficiency Improvement Techniques in Modern Communication Systems". Journal of University of Shanghai for Science and Technology 23, nr 07 (13.07.2021): 656–58. http://dx.doi.org/10.51201/jusst/21/07196.

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This paper discusses Doherty Power Amplifier(DPA) and its evolution over the years. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. The different research trends, all aimed to improve the advantages of the Doherty scheme and to solve its inherent drawbacks, are discussed.

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Abdulkhaleq, Yahya, Al-Yasir, Parchin, McEwan, Rayit, Abd-Alhameed i Noras. "Doherty Power Amplifier for LTE-Advanced Systems". Technologies 7, nr 3 (22.08.2019): 60. http://dx.doi.org/10.3390/technologies7030060.

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The design and implementation of an asymmetrical Doherty power amplifier are discussed, where two Cree GaN High Electron Mobility Transistors (HEMTs) devices are used for designing an asymmetrical Doherty power amplifier to achieve saturated power of 48 dBm and optimal back-off efficiency of 8 dB in the frequency band of 3.3–3.5 GHz. Rogers RO4350B material is used as a substrate material, a back-off of 8 dB was achieved with an average gain of 10 dB. Load-pull data are an important tool for determining the optimum load impedance that the transistor needs to see. Additionally, the measured efficiency was 50% when the designed amplifier was tested by a modulated signal of 8 dB peak-to-average-power ratio when the average output power was 40 dBm. At the same time, the linearity of the designed amplifier was measured and found 31.8 dB which can be improved using a digital pre-distorter. The gain phase measurement can be used as an indicator for compensating the phase difference between the two cells.

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Nasri, Abbas, Motahhareh Estebsari, Siroos Toofan, Anna Piacibello, Marco Pirola, Vittorio Camarchia i Chiara Ramella. "Broadband Class-J GaN Doherty Power Amplifier". Electronics 11, nr 4 (12.02.2022): 552. http://dx.doi.org/10.3390/electronics11040552.

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This paper presents a broadband 3–3.7 GHz class-J Doherty power amplifier exploiting second harmonic tuning in the output network. Furthermore, the output impedance inverter is eliminated and its effect is embedded in the main device’s output matching network, thus trading off among bandwidth, efficiency, and gain. The proposed amplifier adopts two 10 W packaged GaN transistors, and it achieves in measurement 60–74%, and 46–50% drain efficiency at saturation and 6 dB output back-off, respectively, with a saturated output power of 43–44.2 dBm and a small-signal gain of 10–13 dB. The proposed DPA exhibits a simulated adjacent channel power ratio less than −30 dBc at 36 dBm average output power, when a 16-QAM modulation with 5 MHz bandwidth is applied to the 3.5 GHz carrier.

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Moreno Rubio, Jorge Julián, Edison Ferney Angarita Malaver i Luis Ángel Lara González. "Wideband Doherty Power Amplifier: A Design Approach". Micromachines 13, nr 4 (23.03.2022): 497. http://dx.doi.org/10.3390/mi13040497.

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This paper presents a simple method to design wideband Doherty power amplifiers (DPAs) based on the synthesis of a combiner network which can mimic the response of an ideal compensation of the device reactive output equivalent network and exploit the maximum power capabilities of the device. Using the Wolfspeed’s CGH40006 and CG2H40025 GaN HEMT devices, two DPAs were designed and simulated to demonstrate the effectiveness of the proposed approach. In both cases, a 1.4 GHz bandwidth was obtained together with an efficiency higher than 44 and 49% at 6 dB OBO. The saturated output power was higher than 41.2 and 47 dBm over the band, for the DPAs using the CGH40006 and CG2H40025 devices, respectively.

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Raab, Frederick. "Efficiency of Doherty RF Power-Amplifier Systems". IEEE Transactions on Broadcasting BC-33, nr 3 (wrzesień 1987): 77–83. http://dx.doi.org/10.1109/tbc.1987.266625.

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Lee, Mun-Woo, Sang-Ho Kam, Yong-Sub Lee i Yoon-Ha Jeong. "Doherty power amplifier with cascaded peaking cells". Microwave and Optical Technology Letters 53, nr 1 (22.11.2010): 208–11. http://dx.doi.org/10.1002/mop.25682.

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Kim, Ildu, Junghwan Moon, Jungjoon Kim, Seunghoon Jee, Junghwan Son i Bumman Kim. "Highly efficient 3-stage Doherty power amplifier using gate bias adaption". International Journal of Microwave and Wireless Technologies 3, nr 1 (22.11.2010): 47–58. http://dx.doi.org/10.1017/s1759078710000711.

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This paper demonstrates a highly efficient 3-stage Doherty power amplifier (PA) employing an envelope tracking (ET) technique. The ‘3-stage’ Doherty PA is the most efficient architecture for a high peak-to-average power ratio (PAPR) signal among the various Doherty PAs. However, because of the lower peaking biases than those of the ‘N-way’ Doherty PA, the proper load modulation is hard to be achieved. To get proper modulation, the peaking PAs' gate biases have been adaptively controlled using the ET technique, and the peak power and maximum efficiency characteristic along the backed-off output power region is successfully achieved. By ADS and Matlab simulations, the overall behavior of the 3-stage Doherty PA employing the ET technique has been fully analyzed. To maximize the overall efficiency of the proposed 3-stage Doherty PA, the unit PA has been designed using class F−1 PA. For verification, the amplifier is implemented using 5 W and 10 W PEP LDMOSFETs for the 802.16e mobile world interoperability for microwave access (WiMAX) at 1 GHz with a 8.5 dB PAPR. The measured drain efficiency of the proposed 3-stage Doherty PA is 55.5% at an average output power of 37 dBm, which is a 7.54 dB backed-off output power. The digital feedback predistortion (DFBPD) algorithm has been used to linearize the proposed PA considering the ET technique. After linearization, the −33.15 dB of relative constellation error (RCE) performance is achieved, satisfying the system specification. These results show that the 3-stage Doherty employing the ET technique and saturated PA is the most suitable PA for the highly efficient and linear transmitter.

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Sajedin, Maryam, I. T. E. Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed i Monica Fernandez Barciela. "A Survey on RF and Microwave Doherty Power Amplifier for Mobile Handset Applications". Electronics 8, nr 6 (25.06.2019): 717. http://dx.doi.org/10.3390/electronics8060717.

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This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.

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33

Hu, Yushi, i Slim Boumaiza. "Doherty Power Amplifier Distortion Correction Using an RF Linearization Amplifier". IEEE Transactions on Microwave Theory and Techniques 66, nr 5 (maj 2018): 2246–57. http://dx.doi.org/10.1109/tmtt.2018.2815562.

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34

Chen, Jun, Guo Qing Shen i Kai Xiong Su. "Application of New Matching Technique in Doherty Amplifier". Applied Mechanics and Materials 278-280 (styczeń 2013): 1091–94. http://dx.doi.org/10.4028/www.scientific.net/amm.278-280.1091.

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According to the shortage of the traditional offset line in Doherty power amplifier, a new offset line technique is proposed to match carrier amplifier with the load and to improve the performance of the Doherty amplifier. By simulation of the computer software, a higher efficiency is obtained using the new offset line comparing the two kinds of offset lines. The new offset line matching technique could be applied in the system with high linearity and low power operation.

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35

Ma, Chao. "Current State and Advanced Architectures of Doherty Power Amplifiers". Highlights in Science, Engineering and Technology 62 (27.07.2023): 42–46. http://dx.doi.org/10.54097/hset.v62i.10422.

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Power amplifiers are critical components of wireless communication systems, providing the necessary power to transmit signals over long distances. Among various power amplifier solutions, the Dougherty power amplifier (DPA) remains a popular choice due to its high efficiency, speed, and power combination. However, conventional DPAs suffer from limited bandwidth and linearity, which have been major challenges in contemporary DPA design. This paper discusses the status, challenges, and potential solutions for improving the bandwidth and linearity of the DPAs. The limited bandwidth of conventional DPAs has been a challenge for their use in wireless data communication. Furthermore, concerning DPA linearity, this paper discusses the importance of linearity for modern wireless communication and potential DPA linearization techniques. The paper proposes several emerging DPA architectures, namely the Asymmetric Dougherty Power Amplifier, Multi-Stage Dougherty Power Amplifier, and Digital Dougherty Power Amplifier. The findings of this paper provide insights into the current status and future development of DPA technology, particularly in terms of bandwidth and linearity.

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36

Fishler, Dan, Zoya Popovic i Taylor Barton. "Supply Modulation Behavior of a Doherty Power Amplifier". IEEE Journal of Microwaves 1, nr 1 (2021): 508–12. http://dx.doi.org/10.1109/jmw.2020.3039421.

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37

Vorapipat, Voravit, Cooper S. Levy i Peter M. Asbeck. "A Class-G Voltage-Mode Doherty Power Amplifier". IEEE Journal of Solid-State Circuits 52, nr 12 (grudzień 2017): 3348–60. http://dx.doi.org/10.1109/jssc.2017.2748283.

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38

Liu, Hao-Yu, Xiao-Hu Fang i Kwok-Keung M. Cheng. "Bandwidth Enhancement of Frequency Dispersive Doherty Power Amplifier". IEEE Microwave and Wireless Components Letters 30, nr 2 (luty 2020): 185–88. http://dx.doi.org/10.1109/lmwc.2019.2963542.

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39

Kwon, Sungwook, Minsu Kim, Sungchan Jung, Jonghyuk Jeong, Kyunghoon Lim, Juho Van, Hanjin Cho, Hyungchul Kim, Wansoo Nah i Youngoo Yang. "Inverted-load network for high-power Doherty amplifier". IEEE Microwave Magazine 10, nr 1 (luty 2009): 93–98. http://dx.doi.org/10.1109/mmm.2008.930680.

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40

Lee, Juyeon, Junghwan Son i Bumman Kim. "Optimised Doherty power amplifier with auxiliary peaking cell". Electronics Letters 50, nr 18 (sierpień 2014): 1299–301. http://dx.doi.org/10.1049/el.2014.2214.

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41

Sun, Guolin, i Rolf H. Jansen. "Broadband Doherty Power Amplifier via Real Frequency Technique". IEEE Transactions on Microwave Theory and Techniques 60, nr 1 (styczeń 2012): 99–111. http://dx.doi.org/10.1109/tmtt.2011.2175237.

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42

Golestaneh, Hamed, Foad Arfaei Malekzadeh i Slim Boumaiza. "An Extended-Bandwidth Three-Way Doherty Power Amplifier". IEEE Transactions on Microwave Theory and Techniques 61, nr 9 (wrzesień 2013): 3318–28. http://dx.doi.org/10.1109/tmtt.2013.2275331.

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43

Gan, Decheng, Weimin Shi, Songbai He, Yong Gao i Gideon Naah. "Broadband Doherty Power Amplifier With Transferable Continuous Mode". IEEE Access 8 (2020): 99485–94. http://dx.doi.org/10.1109/access.2020.2997826.

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44

Hayati, M., i S. Roshani. "A broadband Doherty power amplifier with harmonic suppression". AEU - International Journal of Electronics and Communications 68, nr 5 (maj 2014): 406–12. http://dx.doi.org/10.1016/j.aeue.2013.11.003.

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45

Ozen, Mustafa, Kristoffer Andersson i Christian Fager. "Symmetrical Doherty Power Amplifier With Extended Efficiency Range". IEEE Transactions on Microwave Theory and Techniques 64, nr 4 (kwiecień 2016): 1273–84. http://dx.doi.org/10.1109/tmtt.2016.2529601.

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46

Sik Cho, Choon, i Jae W. Lee. "Linearity enhanced Doherty power amplifier using analog predistortion". Microwave and Optical Technology Letters 53, nr 2 (15.12.2010): 403–4. http://dx.doi.org/10.1002/mop.25701.

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47

Colantonio, Paolo, Franco Giannini, Rocco Giofrè i Luca Piazzon. "Compact harmonic control network for Doherty power amplifier". Microwave and Optical Technology Letters 51, nr 1 (13.11.2008): 256–58. http://dx.doi.org/10.1002/mop.23983.

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48

Xiang, Yong-Bo, i Guang-Ming Wang. "The design of high-performance Doherty power amplifier". Microwave and Optical Technology Letters 52, nr 2 (8.12.2009): 493–95. http://dx.doi.org/10.1002/mop.24917.

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49

Yan, Jonmei J., Paul Draxler, Calogero D. Presti, Donald F. Kimball i Peter M. Asbeck. "Digital predistortion of envelope-tracking power amplifiers under average power back-off and long-term average power efficiency for base-station applications". International Journal of Microwave and Wireless Technologies 5, nr 2 (18.02.2013): 171–77. http://dx.doi.org/10.1017/s1759078713000147.

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In many base-station applications, the load/usage fluctuates over time periods of hours to days, thereby varying the required transmit power by as much as 10 dB. It is desirable to maintain high efficiency and linearity in the power amplifier under these back-off conditions in order to achieve high long-term efficiency. This paper demonstrates a scalable digital predistortion (DPD) approach that can be applied under different power back-off levels in envelope-tracking (ET) amplifiers and quantifies the associated efficiency. Efficiency comparisons are made with other amplifier configurations such as Class B and Doherty. Efficiency of 60% at full power (35 W average power) and >30% efficiency at 10 dB average power back-off are measured in an ET amplifier with a 7.54 dB peak-to-average ratio (PAPR) single-carrier WCDMA signal while meeting linearity specifications. Long-term base-station usage probability functions are presented. The long-term efficiency of the ET amplifiers is simulated to be greater than that of Class B and Doherty amplifiers.

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50

Wibisono, Gunawan. "Perancangan Concurrent Multiband Power Amplifier Kelas E". Setrum : Sistem Kendali-Tenaga-elektronika-telekomunikasi-komputer 1, nr 2 (21.03.2016): 97. http://dx.doi.org/10.36055/setrum.v1i2.485.

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