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Gotowa bibliografia na temat „Multiband doherty power amplifier”

Autor: Grafiati

Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "Multiband doherty power amplifier"

Wiegner, Dirk, Gerhard Luz, Patrick Jüschke, Robin Machinal, Thomas Merk, Ulrich Seyfried, Wolfgang Templ, Andreas Pascht, Rüdiger Quay i Friedbert Van Raay. "AlGaN/GaN-based power amplifiers for mobile radio applications: a review from the system supplier's perspective". International Journal of Microwave and Wireless Technologies 2, nr 1 (luty 2010): 95–104. http://dx.doi.org/10.1017/s175907871000022x.

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This paper gives a summarized overview on the progress and achievements on AlGaN/GaN high electron mobility transistors (HEMT)-based power amplifiers (PAs) for mobile radio applications which have been achieved within two national funded German projects during a period of six years. Starting with a first 34 dBm (2.5 W, peak) amplifier in 2003 the impressive progress toward highly efficient S-band mobile radio PAs with up to >50 dBm (100 W) peak output power is described by means of some selected single- and multiband amplifier demonstrators. This progress has been mainly enabled by clear progress on GaN technology, device packaging, and PA design. Targeting at highly efficient single-band amplifier applications, a 2.7 GHz symmetrical Doherty amplifier with up to 45% drain efficiency at close to 45 dBm average output power under single-carrier W-CDMA (Wideband Code Division Multiple Access) operation using digital predistortion can be highlighted. In case of multiband capable amplifiers addressing software-defined radio applications, a class-AB-based demonstrator covering a frequency range from 1.8 to 2.7 GHz was realized. The amplifier showed >30% drain efficiency up to 2.5 GHz as well as up to 40 dBm average output power under single-carrier W-CDMA operation using proprietary digital predistortion. Finally, Alcatel-Lucent's activities on envelope tracking for future efficiency improved GaN-based amplifiers are described.

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Kalyan, Robin, Karun Rawat i Shiban K. Koul. "Reconfigurable and Concurrent Dual-Band Doherty Power Amplifier for Multiband and Multistandard Applications". IEEE Transactions on Microwave Theory and Techniques 65, nr 1 (styczeń 2017): 198–208. http://dx.doi.org/10.1109/tmtt.2016.2614930.

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Nghiem, Xuan Anh, Junqing Guan, Thomas Hone i Renato Negra. "Design of Concurrent Multiband Doherty Power Amplifiers for Wireless Applications". IEEE Transactions on Microwave Theory and Techniques 61, nr 12 (grudzień 2013): 4559–68. http://dx.doi.org/10.1109/tmtt.2013.2281959.

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Pang, Jingzhou, Zhijiang Dai, Yue Li, Meng Li i Anding Zhu. "Multiband Dual-Mode Doherty Power Amplifier Employing Phase Periodic Matching Network and Reciprocal Gate Bias for 5G Applications". IEEE Transactions on Microwave Theory and Techniques 68, nr 6 (czerwiec 2020): 2382–97. http://dx.doi.org/10.1109/tmtt.2020.2971481.

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Kim, Bumman, Jangheon Kim, Ildu Kim i Jeonghyeon Cha. "The Doherty power amplifier". IEEE Microwave Magazine 7, nr 5 (październik 2006): 42–50. http://dx.doi.org/10.1109/mw-m.2006.247914.

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Qi, Xiaobo, i Fei Xiao. "Filtering Doherty power amplifier". IET Microwaves, Antennas & Propagation 14, nr 10 (29.05.2020): 1074–78. http://dx.doi.org/10.1049/iet-map.2019.0835.

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Vorapipat, Voravit, Cooper S. Levy i Peter M. Asbeck. "Voltage Mode Doherty Power Amplifier". IEEE Journal of Solid-State Circuits 52, nr 5 (maj 2017): 1295–304. http://dx.doi.org/10.1109/jssc.2017.2647954.

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Osman Luhaib, Saad Wasmi. "Design of a Doherty Power Amplifier for GSM Systems". Tikrit Journal of Engineering Sciences 18, nr 3 (30.09.2011): 61–67. http://dx.doi.org/10.25130/tjes.18.3.07.

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This paper presents the design and analysis of Doherty power amplifier. The Doherty amplifier is used in a base station for mobile system because of its high efficiency. The class AB power amplifier used in the configuration of the main and auxiliary amplifier. The result obtained shows that the Doherty power amplifier can be used on a wide band spectrum, the amplifier works at 900MHz and has very good power added efficiency (PAE) and gain. The amplifier can also work at 1800MHz at input power greater than 20dBm.

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Xi, Wang, Yu Shi, Shao Lin Yang i Jun Li. "Doherty Power Amplifier with Dynamic Power Dividing Network for Enhanced Efficiency". Applied Mechanics and Materials 721 (grudzień 2014): 560–63. http://dx.doi.org/10.4028/www.scientific.net/amm.721.560.

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In this paper, we present a high efficiency Doherty power amplifier (PA) employing dynamic power dividing network which automatically adjusts the input power division ratio in accordance with the level of input power to enhance efficiency. Doherty PA circuit parameters of each amplifier are determined by basic performance analysis according to the datasheet. Simulated circuits through Advanced Design System (ADS) exhibit an improvement of 4% at a 6 dB backoff point from its saturated output power (PSAT) than that of a conventional Doherty PA. Implemented Doherty PA using two Freescale MRF6S27015N laterally diffused metal oxide semiconductor (LDMOS) field-effect transistors (FETs) achieves excellent drain efficiency of 46.5% at a 6 dB backoff point from PSAT, which is 2% higher than conventional Doherty PA.

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Chun, S. H., D. H. Jang, J. Y. Kim i J. H. Kim. "Inverted asymmetric Doherty power amplifier driven by two-stage symmetric Doherty amplifier". Electronics Letters 46, nr 17 (2010): 1208. http://dx.doi.org/10.1049/el.2010.1708.

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Rozprawy doktorskie na temat "Multiband doherty power amplifier"

Jansen, Roelof. "Evaluation of Doherty Amplifier Implementations". Thesis, Stellenbosch : Stellenbosch University, 2008. http://hdl.handle.net/10019.1/20445.

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Thesis (MScIng)--Stellenbosch University, 2008.
ENGLISH ABSTRACT: Modern communication systems demand efficient, linear power amplifiers. The amplifiers are often operated in the backed-off power levels at which linear amplifiers such as class B amplifier are particularly inefficient. The Doherty amplifier provides an improvement as it increases efficiency at backed of power levels. Doherty amplifiers consists of two amplifiers, a carrier amplifier and a peaking amplifier, of which the output is combined in a novel way. Implementation of the Doherty amplifier with transistors is not ideal. One of the main problems is the insufficient current production of the peaking amplifier at peak envelope power (PEP) if it is implemented as a class C amplifier. A suggested solution to this problem is a bias adaption system that controls the peaking amplifier gate voltage dynamically depending on the input power levels. The design and evaluation of such a adaptive Doherty amplifier is the main goal of this thesis. A classical Doherty amplifier with and an uneven Doherty amplifier with unequal power division between the carrier and peaking amplifiers are also evaluated and compared with the adaptive Doherty amplifier. The amplifiers are designed using a 10 W LDMOS FET device, the MRF282. The adaptive Doherty amplifier and the uneven Doherty amplifier show significant improvements in efficiency and output power over the even Doherty amplifier. At PEP the adaptive Doherty delivers 42.4 dBm at 39.75 % power added efficiency (PAE), the uneven Doherty amplifier 41.9 dBm at 40.75 % PAE and the even Doherty amplifier 40.8 dBm at 38.6 % PAE. At 3dB backed-off input power the adaptive Doherty amplifier has an efficiency of 34.3%, compared to 34.9 5% for the uneven Doherty amplifier and 29.75 % for the even Doherty amplifier.
AFRIKAANSE OPSOMMING: Moderne kommunikasie stelsels vereis effektiewe, linieêre drywing versterkers. Die versterkers word dikwels in laer drywings vlakke bedryf waar linieêre versterkers soos ’n klas B versterker besondere lae effektiwiteit het. Die Doherty versterker bied ’n uitweg omdat dit verbeterde effektiwiteit by lae drywings vlakke bied. ’n Doherty versterker bestaan uit twee versterkers, die hoof versterker en die aanvullende versterker, waarvan die uittrees met ’n spesiale kombinasie netwerk bymekaar gevoeg word. Die implementasie van Doherty versterkers met transistors is nie ideaal nie. Een van die hoof probleme is die onvoldoende stroom wat deur die aanvullings versterker gebied word by piek omhulsel drywing (POD). ’n Oplossing vir die probleem is om ’n aanpassings sisteem te gebruik wat die aanvullende versterker se hekspanning dinamies beheer afhangende van die intree drywings vlakke. Die ontwerp en evaluasie van so ’n aanpassings Doherty versterker is die hoof doel van hierdie tesis. ’n Klassieke Doherty versterke met gelyke drywings verdeling en ’n ongelyke Doherty versterker wat gebruik maak van ongelyke drywings verdeling tussen die hoof-en aanvullende versterkers is ook gevalueer en vergelyk met die aanpassings Doherty versterker. Die versterkers was ontwerp met ’n 10 W LDMOS FET, die MRF282. Die aanpassings Doherty versterker en die ongelyke Doherty versterker het aanmerklike verbeteringe in effektiwiteit en uittree drywing gebring in vergelyking met die ewe Doherty versterker. By POD het die aanpassings versterker 42.4 dBm teen 39.75 % drywing toegevoegde effektiwiteit (DTE) gelewer, die ongelyke Doherty versterker 41.9 dBm teen 40.75 % DTE, en die ewe Doherty versterker 40.8 dBm teen 38.6 DTE. By ’n intree drywingsvlak 3 dB laer as POD het die aanpassings Doherty versterker ’n effektiwiteit van 34.3 % getoon, in vergelyking met die onewe Doherty versterker se 34.9 % en die ewe Doherty versterker se 29.75 % DTE.

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Kamarudin, Syalwani. "Advanced Doherty power amplifier design for modern communication systems". Thesis, Cardiff University, 2018. http://orca.cf.ac.uk/115269/.

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Mobile communication technologies are becoming increasingly sophisticated and have experienced rapid evolution over the last few decades, and this is especially true for the base station transmitter. In response to the ever increasing demand in communication traffic and data throughput, largely driven by video based social media platforms, both spectral and power efficient device and systems are needed to fulfil the requirements. In terms of energy consumption, the power amplifier is an important component, and although developing efficient technologies for handset equipment is important, it is the base station element of the communications system that poses the greater challenge, having to deal with many channels simultaneously, resulting in the need to linearly and efficiently amplify highly dynamic phase and amplitude modulated signals possessing very large peak-to-average power ratios, at high power levels. This unique set of challenges has led to continuous research to improve the efficiency of amplifiers that can accommodate such signals, and the Doherty architecture has now become the architecture-of-choice. However, most of the previous research studies demonstrate Doherty performance enhancement through a ‘conventional’ design approach that uses one input source and a passive power splitter to deliver power to each half of the Doherty structure. They do not emphasize the additional efficiency and other performance improvements that are possible in Doherty amplifiers when using two different, independent and phase coherent input sources, attached to the input path of both main and auxiliary amplifiers. IV The novel research work presented in this thesis introduces an optimised design approach for Doherty amplifier architectures with individual input sources, as well as detailing a measurement architecture that is necessary to characterise such structures, using separate, phase-coherent input sources in a realistic measurement scenario. Finally, following extensive characterisation of a number of promising architectures, investigations around efficiency enhancement are focused around the adaption of gate bias applied to the auxiliary amplifier device, and identifying, for the first time, what is possible by generating different shaping functions that relate bias voltage to the magnitude of the input signal. One completely new area of research and novelty introduced in this work for example shows how choosing the right shaping function can give improved linearity and importantly linearisability by producing a flat gain over dynamic range. Note that linearisability is important, and is defined here as the term used to describe the ease with which the non-linearities of a device or power amplifier can be corrected. It is often assumed in power amplifier design that efficiency and power are the most important parameters, and that modern digital pre-distortion (DPD) techniques can easily correct any non-linearity that may result. Industry is now finding that this is not the case however, and the type and nature of the non-linearity in terms to AM-AM and AM-PM distortion is very important in determining of the degree of linearization possible.

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Gebremicael, Kibrom Negash. "Compressive sensing based multiband RF power amplifier linearisation". Thesis, University of Bristol, 2016. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.730827.

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Tarar, Mohsin Mumtaz. "Design and Implementation of as Asymmetric Doherty Power Amplifier at 2.65 GHz in GaN HEMT Technology". Thesis, Linköpings universitet, Elektroniska komponenter, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-75976.

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Power amplifiers are an indispensible part of the wireless communication systems. Conventional PAs provide peak efficiency at peak output power which is obtained at a certain fixed optimum resistance. These kind of amplifiers are normally called switched-mode power amplifiers (SMPAs) and are used for constant envelope signals. However, there is low efficiency at low output power which is the linear operation of a PA and is used for the amplification of non-constant envelope signals. For an optimum PA design, linearity and efficiency are the requirements. There are efficiency enhancement techniques and Doherty architecture is one such approach. Classical Doherty (symmetric) approach entertains the signals that have peak to average power ratio (PAPR) of 6 dB. Applications like Long Term Evolution (LTE) having high PAPR of nearly 9 dB demand efficiency throughout the back-off range. Therefore the challenge is to design and implement an asymmetric Doherty power amplifier that ensures high efficiency in the back-off range greater than 6 dB. This work presents the design and implementation of an Asymmetric Doherty Power Amplifier (ADPA) for 12 dB back-off at 2.65 GHz in Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) technology. The carrier and peaking amplifiers are biased in class-B and C mode of operations, respectively. A branchline coupler is used to divide the input signal equally to amplifiers input. A 10 W GaN HEMT transistor is used as an active device for both amplifiers. The design has been implemented with ideal transmission lines and then shifted to microstrip lines using 508 um substrate. The measurement results of the ADPA prototype, when drain of carrier and peaking devices are biased at 24 V and 28 V respectively, showed an input power back of (IPBO) of 9.68 dB with almost same power added efficiency (PAE) of 44% throughout the entire back-off range. The simulations are done with Agilent ADS and Momentum is used for Electromagnetic (EM) simulation.

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Smith, Karla Jenny Isabella. "Gate Bias Control and Harmonic Load Modulation for a Doherty Amplifier". Thesis, University of Canterbury. Electrical and Computer Engineering, 2009. http://hdl.handle.net/10092/2856.

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Linearity and efficiency are both critical parameters for radio frequency transmitter applications. In theory, a Doherty amplifier is a linear amplifier that is significantly more efficient than comparable conventional linear amplifiers. It comprises two amplifiers, connected at their outputs by a quarter-wave transformer. The main amplifier is always on, while the peaking amplifier is off during low power levels. Load modulation of the main amplifier occurs when the peaking amplifier is on due to the quarter-wave transformer, ensuring the main amplifier never enters saturation. This results in an efficiency characteristic that increases with respect to input power at twice the normal rate at low power levels, and plateaus to a high value at high power levels. However, in much of the research that has been done to-date, less-than-ideal results have been achieved (although efficiency was better than a conventional amplifier). It was decided to investigate the cause of the discrepancy between theoretical and practical results, and devise a method to counteract the problem. It was discovered that the main cause of the discrepancy was non-ideal transistor gate-voltage to drain-current characteristics. The implementation of a gate bias control scheme based upon measured transistor transfer characteristics, and the desired main and peaking amplifier output currents, resulted in a robust method to ensure near-ideal results. A prototype amplifier was constructed to test the control scheme, and theoretical, simulated and measured results were well matched. The amplifier had a region of high efficiency in the high power levels (over 34% for the last 6 dB of input power), and the gain was nearly constant with respect to input power (between 4 and 5 dB over the dynamic range). Furthermore, it was decided to investigate the role harmonics play within the Doherty amplifier. A classical implementation shunts unwanted harmonics to ground within the main and peaking amplifiers. However, odd harmonics generated by the peaking amplifier can be used to operate the main amplifier like a class F amplifier. This means its supply voltage can be lowered, without the amplifier entering saturation, and the efficiency of the Doherty amplifier can be increased without a detrimental effect on the its linearity. A prototype amplifier was constructed to test this theory, and gave good results, with better efficiency than that of a conventional amplifier, and a constant gain with respect to input power (between 6.4 dB and 6.5 dB over the dynamic range).

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Viswanathan, Vani. "Efficiency Enhancement of Base Station Power Amplifiers Using Doherty Technique". Thesis, Virginia Tech, 2004. http://hdl.handle.net/10919/9907.

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The power amplifiers are typically the most power-consuming block in wireless communication systems. Spectrum is expensive, and newer technologies demand transmission of maximum amount of data with minimum spectrum usage. This requires sophisticated modulation techniques, leading to wide, dynamic signals that require linear amplification. Although linear amplification is achievable, it always comes at the expense of efficiency. Most of the modern wireless applications such as WCDMA use non-constant envelope modulation techniques with a high peak to average ratio. Linearity being a critical issue, power amplifiers implemented in such applications are forced to operate at a backed off region from saturation. Therefore, in order to overcome the battery lifetime limitation, a design of a high efficiency power amplifier that can maintain the efficiency for a wider range of radio frequency input signal is the obvious solution. A new technique that improves the drain efficiency of a linear power amplifier such as Class A or AB, for a wider range of output power, has been investigated in this research. The Doherty technique consists of two amplifiers in parallel; in such a way that the combination enhances the power added efficiency of the main amplifier at 6dB back off from the maximum output power. The classes of operation of power amplifier (A, AB, B, C etc), and the design techniques are presented. Design of a 2.14 GHz Doherty power amplifier has been provided in chapter 4. This technique shows a 15% increase in power added efficiency at 6 dB back off from the compression point. This PA can be implemented in WCDMA base station transmitter.
Master of Science

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Sajedin, M., Issa T. Elfergani, Jonathan Rodriguez, Raed A. Abd-Alhameed, M. Fernandez-Barciela i M. Violas. "Ultra-Compact mm-Wave Monolithic IC Doherty Power Amplifier for Mobile Handsets". MDPI, 2021. http://hdl.handle.net/10454/18600.

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Yes
This work develops a novel dynamic load modulation Power Amplifier (PA) circuity that can provide an optimum compromise between linearity and efficiency while covering multiple cellular frequency bands. Exploiting monolithic microwave integrated circuits (MMIC) technology, a fully integrated 1W Doherty PA architecture is proposed based on 0.1 µm AlGaAs/InGaAs Depletion- Mode (D-Mode) technology provided by the WIN Semiconductors foundry. The proposed wideband DPA incorporates the harmonic tuning Class-J mode of operation, which aims to engineer the voltage waveform via second harmonic capacitive load termination. Moreover, the applied post-matching technique not only reduces the impedance transformation ratio of the conventional DPA, but also restores its proper load modulation. The simulation results indicate that the monolithic drive load modulation PA at 4 V operation voltage delivers 44% PAE at the maximum output power of 30 dBm at the 1 dB compression point, and 34% power-added efficiency (PAE) at 6 dB power back-off (PBO). A power gain flatness of around 14 ± 0.5 dB was achieved over the frequency band of 23 GHz to 27 GHz. The compact MMIC load modulation technique developed for the 5G mobile handset occupies the die area of 3.2.
This research was funded by the European Regional Development Fund (FEDER), through COMPETE 2020, POR ALGARVE 2020, Fundação para a Ciência e a Tecnologia (FCT) under i-Five Project (POCI-01-0145-FEDER-030500). This work is also part of the POSITION-II project funded by the ECSEL joint Undertaking under grant number Ecsel-345 7831132-Postitio-II-2017-IA. This work is supported by FCT/MCTES through national funds and when applicable co-funded EU funds under the project UIDB/50008/2020-UIDP/50008/2020. The authors would like to thank the WIN Semiconductors foundry for providing the MMIC GaAs pHEMT PDKs and technical support. This work is supported by the Project TEC2017-88242-C3-2-R- Spanish Ministerio de Ciencia, Innovación e Universidades and EU-FEDER funding.

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Shao, Jin. "Advanced Power Amplifiers Design for Modern Wireless Communication". Thesis, University of North Texas, 2015. https://digital.library.unt.edu/ark:/67531/metadc804973/.

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Modern wireless communication systems use spectrally efficient modulation schemes to reach high data rate transmission. These schemes are generally involved with signals with high peak-to-average power ratio (PAPR). Moreover, the development of next generation wireless communication systems requires the power amplifiers to operate over a wide frequency band or multiple frequency bands to support different applications. These wide-band and multi-band solutions will lead to reductions in both the size and cost of the whole system. This dissertation presents several advanced power amplifier solutions to provide wide-band and multi-band operations with efficiency improvement at power back-offs.

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Seneviratne, Sashieka. "Efficiency Enhancement of Pico-cell Base Station Power Amplifier MMIC in GaN HFET Technology Using the Doherty Technique". Thèse, Université d'Ottawa / University of Ottawa, 2012. http://hdl.handle.net/10393/23078.

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With the growth of smart phones, the demand for more broadband, data centric technologies are being driven higher. As mobile operators worldwide plan and deploy 4th generation (4G) networks such as LTE to support the relentless growth in mobile data demand, the need for strategically positioned pico-sized cellular base stations known as ‘pico-cells’ are gaining traction. In addition to having to design a transceiver in a much compact footprint, pico-cells must still face the technical challenges presented by the new 4G systems, such as reduced power consumptions and linear amplification of the signals. The RF power amplifier (PA) that amplifies the output signals of 4G pico-cell systems face challenges to minimize size, achieve high average efficiencies and broader bandwidths while maintaining linearity and operating at higher frequencies. 4G standards as LTE use non-constant envelope modulation techniques with high peak to average ratios. Power amplifiers implemented in such applications are forced to operate at a backed off region from saturation. Therefore, in order to reduce power consumption, a design of a high efficiency PA that can maintain the efficiency for a wider range of radio frequency signals is required. The primary focus of this thesis is to enhance the efficiency of a compact RF amplifier suitable for a 4G pico-cell base station. For this aim, an integrated two way Doherty amplifier design in a compact 10mm x 11.5mm monolithic microwave integrated circuit using GaN device technology is presented. Using non-linear GaN HFETs models, the design achieves high effi-ciencies of over 50% at both back-off and peak power regions without compromising on the stringent linearity requirements of 4G LTE standards. This demonstrates a 17% increase in power added efficiency at 6 dB back off from peak power compared to conventional Class AB amplifier performance. Performance optimization techniques to select between high efficiency and high linearity operation are also presented. Overall, this thesis demonstrates the feasibility of an integrated HFET Doherty amplifier for LTE band 7 which entails the frequencies from 2.62-2.69GHz. The realization of the layout and various issues related to the PA design is discussed and attempted to be solved.

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Barakat, Ayman. "Doherty power amplifier efficiency and bandwidth enhancement based on a generic design approach". Thesis, Queen's University Belfast, 2017. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.725336.

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This thesis presents a novel synthesis that generalizes the Doherty power amplifier theory of operation with regard to the combiner parameters. This analysis introduces, through a new parameter "x", simple formulae that re-define the relationships between the combiner parameters for a load modulation process over wide bandwidth and efficient usage at the combiner elements.

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Części książek na temat "Multiband doherty power amplifier"

Elsayed, Nourhan, Hani Saleh, Baker Mohammad, Mohammed Ismail i Mihai Sanduleanu. "Doherty Power Amplifier". W Analog Circuits and Signal Processing, 21–30. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-92746-2_3.

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Chen, Wenhua, Karun Rawat i Fadhel M. Ghannouchi. "Multiband Power Amplifier Design". W Multiband RF Circuits and Techniques for Wireless Transmitters, 157–201. Berlin, Heidelberg: Springer Berlin Heidelberg, 2016. http://dx.doi.org/10.1007/978-3-662-50440-6_5.

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Pradeep, Deepa, i B. Ananda Venkatesan. "All-Digital RF Transmitter with Highly Power-Efficient Doherty Power Amplifier". W Lecture Notes in Electrical Engineering, 19–26. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7251-2_3.

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Shahmordi, Mohammad, Sayyed-Hossein Javid-Hosseini, Vahid Nayyeri, Rocco Giofrè i Paolo Colantonio. "A Broadband Doherty Power Amplifier for Sub-6 5G Applications". W Proceedings of SIE 2022, 69–74. Cham: Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-26066-7_11.

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Abdulkhaleq, Ahmed M., Yasir Al-Yasir, Naser Ojaroudi Parchin, Jack Brunning, Neil McEwan, Ashwain Rayit, Raed A. Abd-Alhameed, James Noras i Nabeel Abduljabbar. "A 70-W Asymmetrical Doherty Power Amplifier for 5G Base Stations". W Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering, 446–54. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-05195-2_44.

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Singh, Sukhpreet, i Paras Chawla. "A Highly Efficient and Broadband Doherty Power Amplifier Design for 5G Base Station". W Proceedings of International Conference on Data Science and Applications, 201–11. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-5120-5_16.

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Kim, Bumman. "Enhancement of Doherty Amplifier". W Doherty Power Amplifiers, 65–99. Elsevier, 2018. http://dx.doi.org/10.1016/b978-0-12-809867-7.00003-x.

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"The Doherty Power Amplifier". W High Efficiency RF and Microwave Solid State Power Amplifiers, 435–94. Chichester, UK: John Wiley & Sons, Ltd, 2009. http://dx.doi.org/10.1002/9780470746547.ch11.

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Colantonio, Paolo, Franco Giannini, Rocco Giofre i Luca Piazzo. "The Doherty Power Amplifier". W Advanced Microwave Circuits and Systems. InTech, 2010. http://dx.doi.org/10.5772/8431.

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Kim, Bumman. "Introduction to Doherty Power Amplifier". W Doherty Power Amplifiers, 1–30. Elsevier, 2018. http://dx.doi.org/10.1016/b978-0-12-809867-7.00001-6.

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Streszczenia konferencji na temat "Multiband doherty power amplifier"

Juschke, P., D. Wiegner, G. Luz, R. Machinal, A. Pascht i R. Quay. "Multiband Doherty RF power amplifier". W AFRICON 2011. IEEE, 2011. http://dx.doi.org/10.1109/afrcon.2011.6072119.

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Takenaka, Kiichiro, Tsuyoshi Sato, Hidetoshi Matsumoto, Makoto Kawashima i Norio Nakajima. "Novel broadband Doherty power amplifier design for multiband handset applications". W 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017. IEEE, 2017. http://dx.doi.org/10.1109/mwsym.2017.8058693.

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Takenaka, Kiichiro, Yuuma Noguchi, Satoshi Arayashiki i Takaya Wada. "Multiband Doherty Power Amplifier Design for 5G NR Sub-6 GHz Handset Applications". W 2022 Asia-Pacific Microwave Conference (APMC). IEEE, 2022. http://dx.doi.org/10.23919/apmc55665.2022.9999751.

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Hu, Song, Fei Wang i Hua Wang. "2.1 A 28GHz/37GHz/39GHz multiband linear Doherty power amplifier for 5G massive MIMO applications". W 2017 IEEE International Solid- State Circuits Conference - (ISSCC). IEEE, 2017. http://dx.doi.org/10.1109/isscc.2017.7870246.

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Pengelly, Raymond S. "The Doherty power amplifier". W 2015 IEEE MTT-S International Microwave Symposium (IMS2015). IEEE, 2015. http://dx.doi.org/10.1109/mwsym.2015.7166705.

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Qureshi, Jawad H., Walter Sneijers i John Gajadharsing. "Odd-mode Doherty power amplifier". W 2016 IEEE/MTT-S International Microwave Symposium (IMS). IEEE, 2016. http://dx.doi.org/10.1109/mwsym.2016.7540199.

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Colantonio, Paolo, Franco Giannini, Rocco Giofre i Luca Piazzon. "Designing a Doherty power amplifier". W MELECON 2010 - 2010 15th IEEE Mediterranean Electrotechnical Conference. IEEE, 2010. http://dx.doi.org/10.1109/melcon.2010.5476033.

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Ren, Han, Jin Shao, Bayaner Arigong, Mi Zhou, Song Fu, Jun Ding, Hyoungsoo Kim i Hualiang Zhang. "Simplified Doherty power amplifier structures". W 2015 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS). IEEE, 2015. http://dx.doi.org/10.1109/wmcas.2015.7233219.

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Saad, Paul, Rui Hou, Richard Hellberg i Bo Berglund. "Ultra-Wideband Doherty-Like Power Amplifier". W 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018. IEEE, 2018. http://dx.doi.org/10.1109/mwsym.2018.8439677.

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Lyu, Haifeng, Yuchen Cao i Kenle Chen. "Doherty-to-Balanced Switchable Power Amplifier". W 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019. IEEE, 2019. http://dx.doi.org/10.1109/mwsym.2019.8700948.

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Raporty organizacyjne na temat "Multiband doherty power amplifier"

Baker, Bryant. A 3.6 GHz Doherty Power Amplifier with a 40 dBm Saturated Output Power using GaN on SiC HEMT Devices. Portland State University Library, styczeń 2000. http://dx.doi.org/10.15760/etd.1780.

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