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Artykuły w czasopismach na temat „MoTe2-MoS2”

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Data publikacji: 6 września 2023

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1

Zhu, Xuesong, Dahao Wu, Shengzhi Liang i Jing Liu. "Strain insensitive flexible photodetector based on molybdenum ditelluride/molybdenum disulfide heterostructure". Nanotechnology 34, nr 15 (3.02.2023): 155502. http://dx.doi.org/10.1088/1361-6528/acb359.

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Abstract Flexible electronic and optoelectronic devices are highly desirable for various emerging applications, such as human-computer interfaces, wearable medical electronics, flexible display, etc. Layered two-dimensional (2D) material is one of the most promising types of materials to develop flexible devices due to its atomically thin thickness, which gives it excellent flexibility and mechanical endurance. However, the 2D material devices fabricated on flexible substrate inevitably suffer from mechanical deformation, which can severely affect device performances, resulting in function degradation and even failure. In this work, we propose a strain insensitive flexible photodetector based on MoS2/MoTe2 heterostructure on polyimide substrate, which provides a feasible approach to cancel unpredicted impacts of strain on the device performances. Specifically, the MoS2/MoTe2 heterostructure is deposited with 4 electrodes to form three independent devices of MoS2 FET, MoTe2 FET and MoS2/MoTe2 heterojunction. Among them, the MoS2/MoTe2 heterojunction is used as the photodetector, while the MoS2 FET is used as a strain gauge to calibrate the photo detection result. Such configuration is enabled by the Schottky barrier formed between the electrodes and the MoS2 flake, which leads to obvious and negligible photo response of MoS2/MoTe2 heterojunction and MoS2 FET, respectively, under low source-drain bias (ex. 10 mV). The experimental results show that the proposed mechanism can not only calibrate the photo response to cancel strain effect, but also successfully differentiate the wavelength (with fixed power) or power (with fixed wavelength) of light illumination.
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2

Grajcarova, Liliana, Michaela Riflikova, Roman Martonak i Erio Tosatti. "Structural and electronic behaviour of MoS2, MoSe2and MoTe2at high pressure". Acta Crystallographica Section A Foundations and Advances 70, a1 (5.08.2014): C1619. http://dx.doi.org/10.1107/s2053273314083806.

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Using ab initio calculations and metadynamics simulations we studied the behaviour of layered semiconducting transition metal dichalcogenides, MoX2 (X = S, Se, Te) at high pressure with focus on structural transitions and metallization [1,2]. We found that concerning structure, the behaviour of MoS2 is different from that of MoSe2 and MoTe2. In MoS2 pressure induces at 20 GPa a structural transition where layer sliding takes place, bringing the initial 2Hc stacking to a 2Ha stacking typical of e.g. 2H-NbSe2. This finding naturally explains previous X-ray diffraction and Raman spectroscopy data and was very recently confirmed by new X-ray diffraction experiments[3]. On the other hand, this transition does not occur in MoSe2 and MoTe2 where instead the initial 2Hc stacking remains stable. Besides structural changes pressure in MoS2 induces also a semiconductor - semimetal transition which takes place by band overlap and closing of indirect band gap. This electronic transition occurs in the same region where the structural transition takes place, at 25 GPa in the 2Hc phase and at 20 GPa in the 2Ha phase. In case of MoSe2 and MoTe2 a very similar electronic transition leading to semimetal is predicted to occur at 28 GPa and 13 GPa, respectively. All three materials exhibit after metallization a low density of states at the Fermi level implying low superconducting temperature (if any). Due to absence of structural transition in the metallization region MoSe2 and MoTe2 could be suitable candidate materials for observation of the excitonic insulator phase.
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3

Park, Do-Hyun, i Hyo Chan Lee. "Photogating Effect of Atomically Thin Graphene/MoS2/MoTe2 van der Waals Heterostructures". Micromachines 14, nr 1 (4.01.2023): 140. http://dx.doi.org/10.3390/mi14010140.

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The development of short-wave infrared photodetectors based on various two-dimensional (2D) materials has recently attracted attention because of the ability of these devices to operate at room temperature. Although van der Waals heterostructures of 2D materials with type-II band alignment have significant potential for use in short-wave infrared photodetectors, there is a need to develop photodetectors with high photoresponsivity. In this study, we investigated the photogating of graphene using a monolayer-MoS2/monolayer-MoTe2 van der Waals heterostructure. By stacking MoS2/MoTe2 on graphene, we fabricated a broadband photodetector that exhibited a high photoresponsivity (>100 mA/W) and a low dark current (60 nA) over a wide wavelength range (488–1550 nm).
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4

Hibino, Y., S. Ishihara, N. Sawamoto, T. Ohashi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudo, H. Wakabayashi i A. Ogura. "Investigation on MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition". MRS Advances 2, nr 29 (2017): 1557–62. http://dx.doi.org/10.1557/adv.2017.125.

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ABSTRACTWe report the synthesis of MoS2(1-x)Te2x by co-sputtering deposition and effect of mixture on its bandgap. The deposition was carried out at room temperature, and the sputtering power on individual MoS2 and MoTe2 targets were varied to obtain films with different compositions. Investigation with X-ray photoelectron spectroscopy confirmed the formation of Mo-Te and Mo-S bonds after post-deposition annealing (PDA), and one of the samples exhibited composition ratio of Mo:S:Te = 1:1.2:0.8 and 1:1.9:0.1 achieving 1:2 ratio of metal to chalcogen. Bandgap of MoS1.2Te0.8 and MoS1.9Te0.1 was evaluated with Tauc plot analysis from the extinction coefficient obtained by spectroscopic ellipsometry measurements. The obtained bandgaps were 1.0 eV and 1.3 eV. The resulting bandgap was lower than that of bulk MoS2 and higher than that of bulk MoTe2 suggesting mixture of both materials was achieved by co-sputtering.
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5

Chikukwa, Evernice, Edson Meyer, Johannes Mbese i Nyengerai Zingwe. "Colloidal Synthesis and Characterization of Molybdenum Chalcogenide Quantum Dots Using a Two-Source Precursor Pathway for Photovoltaic Applications". Molecules 26, nr 14 (9.07.2021): 4191. http://dx.doi.org/10.3390/molecules26144191.

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The drawbacks of utilizing nonrenewable energy have quickened innovative work on practical sustainable power sources (photovoltaics) because of their provision of a better-preserved decent environment which is free from natural contamination and commotion. Herein, the synthesis, characterization, and application of Mo chalcogenide nanoparticles (NP) as alternative sources in the absorber layer of QDSSCs is discussed. The successful synthesis of the NP was confirmed as the results from the diffractive peaks obtained from XRD which were positive and agreed in comparison with the standard. The diffractive peaks were shown in the planes (100), (002), (100), and (105) for the MoS2 nanoparticles; (002), (100), (103), and (110) for the MoSe2 nanoparticles; and (0002), (0004), (103), as well as (0006) for the MoTe2 nanoparticles. MoSe2 presented the smallest size of the nanoparticles, followed by MoTe2 and, lastly, by MoS2. These results agreed with the results obtained using SEM analysis. For the optical properties of the nanoparticles, UV–Vis and PL were used. The shift of the peaks from the red shift (600 nm) to the blue shift (270–275 nm and 287–289 nm (UV–Vis)) confirmed that the nanoparticles were quantum-confined. The application of the MoX2 NPs in QDSSCs was performed, with MoSe2 presenting the greatest PCE of 7.86%, followed by MoTe2 (6.93%) and, lastly, by MoS2, with the PCE of 6.05%.
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6

Zazpe, Raul, Hanna Sopha, Jhonatan Rodriguez Pereira i Jan M. Macak. "Electrocatalytic Applications of 2D Molybdenum Dichalcogenides By Atomic Layer Deposition". ECS Meeting Abstracts MA2022-02, nr 31 (9.10.2022): 1150. http://dx.doi.org/10.1149/ma2022-02311150mtgabs.

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2D semiconductor transition metal dichalcogenides have attracted considerable attention due to their layered structure, suitable band gap, electrochemically active unsaturated edges and relatively good stability against photocorrosion. These properties result promising for different applications including, Li-ion batteries, photocatalysis and hydrogen evolution reaction (HER). Apart from the widely studied 2D MoS2, 2D selenide and telluride equivalents, MoSe2 and MoTe2, have recently gained considerable interest due to their higher electrical conductivity, wider inter-layer distance and narrower bandgap as compared to MoS2, high surface area and close to zero Gibbs free energy edges for hydrogen adsorption. Unlike sulfide dichalcogenides, the lack of Se and Te precursors have prevented the synthesis of selenide and telluride dichalcogenides by ALD. In order to surpass such impediment, we present a set of novel in-house synthesized Se and Te compounds, which were successfully combined with commercial Mo precursor to synthesize MoSe2 and MoTe2 by ALD [1-5]. The as-deposited ALD MoSe2 and MoTe2 on substrates of different nature were extensively characterized by different techniques, which confirmed the chemical composition and revealed the growth of 2D flaky nano-crystalline MoSe2 and MoTe2. In parallel, MoSe2 and MoTe2@TiO2 nanotube layers (TNTs) heterostructures were fabricated in a simple and fast fashion to explore and exploit the MoSe2 and MoTe2 photo- and electrocatalytic properties. TNTs act as excellent photoactive supporting material providing a high surface area, unique directionality for charge separation, and highly effective charge collection. The presentation will introduce and describe the synthesis of the 2D Mo dichalcogenides, the corresponding physical and electrochemical characterization and encouraging results obtained in HER [4,5], photocatalysis [4-6] and Li-ion batteries [7]. [1] R. Zazpe et al, FlatChem (2020) 21 100166 [2] J. Charvot et al, Chempluschem (2020) 85 576 [3] J. Charvot et al, RSC Adv. (2021) 11 22140 [4] R. Zazpe et al, ACS Appl. Nano Mater. (2021) 3 12 12034 [5] R. Zazpe et al, Appl. Mater. Today (2021) 23 101017 [6] M. Motola et al, Nanoscale (2019) 11 23126 [7] H. Sopha et al FlatChem (2019) 17 100130
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7

Mirabelli, Gioele, Conor McGeough, Michael Schmidt, Eoin K. McCarthy, Scott Monaghan, Ian M. Povey, Melissa McCarthy i in. "Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2". Journal of Applied Physics 120, nr 12 (28.09.2016): 125102. http://dx.doi.org/10.1063/1.4963290.

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8

Balaji, Yashwanth, Dan Mocuta, Guido Groeseneken, Quentin Smets, Cesar Javier Lockhart De La Rosa, Anh Khoa Augustin Lu, Daniele Chiappe i in. "Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures". IEEE Journal of the Electron Devices Society 6 (2018): 1048–55. http://dx.doi.org/10.1109/jeds.2018.2815781.

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9

Li, Shangdong, Zhenbei He, Yizhen Ke, Junxiong Guo, Tiedong Cheng, Tianxun Gong, Yuan Lin, Zhiwei Liu, Wen Huang i Xiaosheng Zhang. "Ultra-sensitive self-powered photodetector based on vertical MoTe2/MoS2 heterostructure". Applied Physics Express 13, nr 1 (17.12.2019): 015007. http://dx.doi.org/10.7567/1882-0786/ab5e72.

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10

Pan, Shudi, Pavel Valencia-Acuna, Weijin Kong, Jianhua Liu, Xiaohui Ge, Wanfeng Xie i Hui Zhao. "Efficient interlayer electron transfer in a MoTe2/WS2/MoS2 trilayer heterostructure". Applied Physics Letters 118, nr 25 (21.06.2021): 253106. http://dx.doi.org/10.1063/5.0047909.

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11

Burton, B. P., i A. K. Singh. "Prediction of entropy stabilized incommensurate phases in the system MoS2−MoTe2". Journal of Applied Physics 120, nr 15 (21.10.2016): 155101. http://dx.doi.org/10.1063/1.4964868.

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12

Hu, Ruixue, Enxiu Wu, Yuan Xie i Jing Liu. "Multifunctional anti-ambipolar p-n junction based on MoTe2/MoS2 heterostructure". Applied Physics Letters 115, nr 7 (12.08.2019): 073104. http://dx.doi.org/10.1063/1.5109221.

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13

Yao, Hao, Enxiu Wu i Jing Liu. "Frequency doubler based on a single MoTe2/MoS2 anti-ambipolar heterostructure". Applied Physics Letters 117, nr 12 (21.09.2020): 123103. http://dx.doi.org/10.1063/5.0018882.

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14

Fang, Qiyi, Zhepeng Zhang, Qingqing Ji, Siya Zhu, Yue Gong, Yu Zhang, Jianping Shi i in. "Transformation of monolayer MoS2 into multiphasic MoTe2: Chalcogen atom-exchange synthesis route". Nano Research 10, nr 8 (20.04.2017): 2761–71. http://dx.doi.org/10.1007/s12274-017-1480-z.

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15

Wang, Feng, Lei Yin, Zhen Xing Wang, Kai Xu, Feng Mei Wang, Tofik Ahmed Shifa, Yun Huang, Chao Jiang i Jun He. "Configuration-Dependent Electrically Tunable Van der Waals Heterostructures Based on MoTe2/MoS2". Advanced Functional Materials 26, nr 30 (30.05.2016): 5499–506. http://dx.doi.org/10.1002/adfm.201601349.

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16

Chen, Yan, Xudong Wang, Guangjian Wu, Zhen Wang, Hehai Fang, Tie Lin, Shuo Sun i in. "High-Performance Photovoltaic Detector Based on MoTe2 /MoS2 Van der Waals Heterostructure". Small 14, nr 9 (22.01.2018): 1703293. http://dx.doi.org/10.1002/smll.201703293.

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17

Quan, Chenjing, Chunhui Lu, Chuan He, Xiang Xu, Yuanyuan Huang, Qiyi Zhao i Xinlong Xu. "Band Alignment of MoTe2 /MoS2 Nanocomposite Films for Enhanced Nonlinear Optical Performance". Advanced Materials Interfaces 6, nr 5 (13.01.2019): 1801733. http://dx.doi.org/10.1002/admi.201801733.

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18

Hibino, Yusuke, Kota Yamazaki, Yusuke Hashimoto, Yuya Oyanagi, Naomi Sawamoto, Hideaki Machida, Masato Ishikawa, Hiroshi Sudo, Hitoshi Wakabayashi i Atsushi Ogura. "The Physical and Chemical Properties of MoS2(1-x)Te2x Alloy Synthesized by Co-sputtering and Chalcogenization and Their Dependence on Fabrication Conditions". MRS Advances 5, nr 31-32 (2020): 1635–42. http://dx.doi.org/10.1557/adv.2020.170.

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ABSTRACTMoS2(1-x)Te2x, the alloy of MoS2 and MoTe2 was fabricated with just co-sputtering and the combination of co-sputtering with following thermal treatment in chalcogen ambient. Phase separation, where MoTe2 was segregated rather than S and Te being uniformly distributed, was observed for some samples. From the physical structure evaluation using XRD, it was shown that the samples that was sulfurized after unintentional oxidation during shelf time exhibited no phase separation. It was suggested that oxidation of Mo or amorphous nature of the film at the chalcogenization stage may prevent the phase separation. In addition, some samples were stored in desiccator for stability evaluation. It was revealed that the samples undergo oxidation to different extent depending on the carrier gas used in tellurization. Finally, the bandgap and band structure was evaluated for samples with different Te concentration. The bandgap showed bowing behavior for different Te concentration with the bowing parameter b = -1.21 eV. Combined with the bandgap evaluation, the valence analysis with XPS showed that the band structure shifted according to the Te concentration. The shift in bandgap allows flexible band alignment which is expected to expand the materials applicability.
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19

Wang, Jinhua, i Gyaneshwar P. Srivastava. "Tunable Electronic Properties of Lateral Monolayer Transition Metal Dichalcogenide Superlattice Nanoribbons". Nanomaterials 11, nr 2 (19.02.2021): 534. http://dx.doi.org/10.3390/nano11020534.

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The structural stability and structural and electronic properties of lateral monolayer transition metal chalcogenide superlattice zigzag and armchair nanoribbons have been studied by employing a first-principles method based on the density functional theory. The main focus is to study the effects of varying the width and periodicity of nanoribbon, varying cationic and anionic elements of superlattice parent compounds, biaxial strain, and nanoribbon edge passivation with different elements. The band gap opens up when the (MoS2)3/(WS2)3 and (MoS2)3/(MoTe2)3 armchair nanoribbons are passivated by H, S and O atoms. The H and O co-passivated (MoS2)3/(WS2)3 armchair nanoribbon exhibits higher energy band gap. The band gap with the edge S vacancy connecting to the W atom is much smaller than the S vacancy connecting to the Mo atom. Small band gaps are obtained for both edge and inside Mo vacancies. There is a clear difference in the band gap states between inside and edge Mo vacancies for symmetric nanoribbon structure, while there is only a slight difference for asymmetric structure. The electronic orbitals of atoms around Mo vacancy play an important role in determining the valence band maximum, conduction band minimum, and impurity level in the band gap.
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20

DiCamillo, Kyle, Sergiy Krylyuk, Wendy Shi, Albert Davydov i Makarand Paranjape. "Automated Mechanical Exfoliation of MoS2 and MoTe2 Layers for Two-Dimensional Materials Applications". IEEE Transactions on Nanotechnology 18 (2019): 144–48. http://dx.doi.org/10.1109/tnano.2018.2868672.

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Duong, Ngoc Thanh, Juchan Lee, Seungho Bang, Chulho Park, Seong Chu Lim i Mun Seok Jeong. "Modulating the Functions of MoS2/MoTe2 van der Waals Heterostructure via Thickness Variation". ACS Nano 13, nr 4 (2.04.2019): 4478–85. http://dx.doi.org/10.1021/acsnano.9b00014.

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Wu, Enxiu, Yuan Xie, Qingzhou Liu, Xiaodong Hu, Jing Liu, Daihua Zhang i Chongwu Zhou. "Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe2/MoS2 Heterotransistors". ACS Nano 13, nr 5 (11.04.2019): 5430–38. http://dx.doi.org/10.1021/acsnano.9b00201.

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Hussain, Sajjad, Supriya A. Patil, Dhanasekaran Vikraman, Iqra Rabani, Alvira Ayoub Arbab, Sung Hoon Jeong, Hyun-Seok Kim, Hyosung Choi i Jongwan Jung. "Enhanced electrocatalytic properties in MoS2/MoTe2 hybrid heterostructures for dye-sensitized solar cells". Applied Surface Science 504 (luty 2020): 144401. http://dx.doi.org/10.1016/j.apsusc.2019.144401.

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Fan, Xaiofeng, David J. Singh, Q. Jiang i W. T. Zheng. "Pressure evolution of the potential barriers of phase transition of MoS2, MoSe2 and MoTe2". Physical Chemistry Chemical Physics 18, nr 17 (2016): 12080–85. http://dx.doi.org/10.1039/c6cp00715e.

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DeGregorio, Zachary P., Youngdong Yoo i James E. Johns. "Aligned MoO2/MoS2 and MoO2/MoTe2 Freestanding Core/Shell Nanoplates Driven by Surface Interactions". Journal of Physical Chemistry Letters 8, nr 7 (24.03.2017): 1631–36. http://dx.doi.org/10.1021/acs.jpclett.7b00307.

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Li, Chao, Xiao Yan, Xiongfei Song, Wenzhong Bao, Shijin Ding, David Wei Zhang i Peng Zhou. "WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different band alignment". Nanotechnology 28, nr 41 (13.09.2017): 415201. http://dx.doi.org/10.1088/1361-6528/aa810f.

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Zribi, Rayhane, i Giovanni Neri. "Mo-Based Layered Nanostructures for the Electrochemical Sensing of Biomolecules". Sensors 20, nr 18 (21.09.2020): 5404. http://dx.doi.org/10.3390/s20185404.

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Mo-based layered nanostructures are two-dimensional (2D) nanomaterials with outstanding characteristics and very promising electrochemical properties. These materials comprise nanosheets of molybdenum (Mo) oxides (MoO2 and MoO3), dichalcogenides (MoS2, MoSe2, MoTe2), and carbides (MoC2), which find application in electrochemical devices for energy storage and generation. In this feature paper, we present the most relevant characteristics of such Mo-based layered compounds and their use as electrode materials in electrochemical sensors. In particular, the aspects related to synthesis methods, structural and electronic characteristics, and the relevant electrochemical properties, together with applications in the specific field of electrochemical biomolecule sensing, are reviewed. The main features, along with the current status, trends, and potentialities for biomedical sensing applications, are described, highlighting the peculiar properties of Mo-based 2D-nanomaterials in this field.
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28

Ahuja, Ushma, Ritu Joshi, D. C. Kothari, Harpal Tiwari i K. Venugopalan. "Optical Response of Mixed Molybdenum Dichalcogenides for Solar Cell Applications Using the Modified Becke–Johnson Potential". Zeitschrift für Naturforschung A 71, nr 3 (1.03.2016): 213–23. http://dx.doi.org/10.1515/zna-2015-0393.

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AbstractEnergy bands and density of states (DOS) of mixed molybdenum dichalcogenides like MoS2, MoSeS, MoSe2, MoTe2, MoTeS, and MoTe0.5S1.5 are reported for the first time using the Tran–Blaha modified Becke–Johnson potential within full potential-linearised augmented plane wave technique. From the partial DOS, a strong hybridisation between the Mo-d and chalcogen-p states is observed below the Fermi energy EF. In addition, the dielectric constants, absorption coefficients, and refractivity spectra of these compounds have also been deduced. The integrated absorption coefficients derived from the frequency-dependent absorption spectra within the energy range of 0–4.5 eV show a possibility of using molybdenum dichalcogenides, particularly MoTe0.5S1.5, in solar cell applications. Birefringence and degree of anisotropy are also discussed using the data on refractivity and imaginary components of the dielectric constant.
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Du, Wanying, Xionghui Jia, Zhixuan Cheng, Wanjing Xu, Yanping Li i Lun Dai. "Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe2 and n-MoS2". iScience 24, nr 12 (grudzień 2021): 103491. http://dx.doi.org/10.1016/j.isci.2021.103491.

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Ding, Yao, Nan Zhou, Lin Gan, Xingxu Yan, Ruizhe Wu, Irfan H. Abidi, Aashir Waleed i in. "Stacking-mode confined growth of 2H-MoTe2/MoS2 bilayer heterostructures for UV–vis–IR photodetectors". Nano Energy 49 (lipiec 2018): 200–208. http://dx.doi.org/10.1016/j.nanoen.2018.04.055.

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Shang, Ju Ying, Michael J. Moody, Jiazhen Chen, Sergiy Krylyuk, Albert V. Davydov, Tobin J. Marks i Lincoln J. Lauhon. "In Situ Transport Measurements Reveal Source of Mobility Enhancement of MoS2 and MoTe2 during Dielectric Deposition". ACS Applied Electronic Materials 2, nr 5 (21.04.2020): 1273–79. http://dx.doi.org/10.1021/acsaelm.0c00085.

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Zhang, Kenan, Tianning Zhang, Guanghui Cheng, Tianxin Li, Shuxia Wang, Wei Wei, Xiaohao Zhou i in. "Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures". ACS Nano 10, nr 3 (9.03.2016): 3852–58. http://dx.doi.org/10.1021/acsnano.6b00980.

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Geng, W. T., V. Wang, Y. C. Liu, T. Ohno i J. Nara. "Moiré Potential, Lattice Corrugation, and Band Gap Spatial Variation in a Twist-Free MoTe2/MoS2 Heterobilayer". Journal of Physical Chemistry Letters 11, nr 7 (18.03.2020): 2637–46. http://dx.doi.org/10.1021/acs.jpclett.0c00605.

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Chen, Yan, Xudong Wang, Guangjian Wu, Zhen Wang, Hehai Fang, Tie Lin, Shuo Sun i in. "Optoelectronics: High-Performance Photovoltaic Detector Based on MoTe2 /MoS2 Van der Waals Heterostructure (Small 9/2018)". Small 14, nr 9 (marzec 2018): 1870038. http://dx.doi.org/10.1002/smll.201870038.

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Wang, Bin, Shengxue Yang, Cong Wang, Minghui Wu, Li Huang, Qian Liu i Chengbao Jiang. "Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions". Nanoscale 9, nr 30 (2017): 10733–40. http://dx.doi.org/10.1039/c7nr03445h.

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Duong, Ngoc Thanh, Seungho Bang, Seung Mi Lee, Dang Xuan Dang, Dong Hoon Kuem, Juchan Lee, Mun Seok Jeong i Seong Chu Lim. "Parameter control for enhanced peak-to-valley current ratio in a MoS2/MoTe2 van der Waals heterostructure". Nanoscale 10, nr 26 (2018): 12322–29. http://dx.doi.org/10.1039/c8nr01711e.

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37

Cristiano, Michele N., Ted V. Tsoulos i Laura Fabris. "Quantifying and optimizing photocurrent via optical modeling of gold nanostar-, nanorod-, and dimer-decorated MoS2 and MoTe2". Journal of Chemical Physics 152, nr 1 (7.01.2020): 014705. http://dx.doi.org/10.1063/1.5127279.

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38

Amory, C., J. C. Bernède i N. Hamdadou. "A study of textured non-stoichiometric MoTe2 thin films used as substrates for textured stoichiometric MoS2 thin films". Vacuum 72, nr 4 (styczeń 2004): 351–61. http://dx.doi.org/10.1016/j.vacuum.2003.09.001.

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39

Ahn, Jongtae, Ji-Hoon Kang, Jihoon Kyhm, Hyun Tae Choi, Minju Kim, Dae-Hwan Ahn, Dae-Yeon Kim i in. "Self-Powered Visible–Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe2/MoS2 Semivertical Heterojunction Photodiodes". ACS Applied Materials & Interfaces 12, nr 9 (10.02.2020): 10858–66. http://dx.doi.org/10.1021/acsami.9b22288.

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Khan, Md Azmot Ullah, Naheem Olakunle Adesina i Jian Xu. "Near Unity Absorbance and Photovoltaic Properties of TMDC/Gold Heterojunction for Solar Cell Application". Key Engineering Materials 918 (25.04.2022): 97–105. http://dx.doi.org/10.4028/p-uz62m4.

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In this paper, near unity broadband absorption of Van der Waals semiconductors on a metallic substrate, and their photovoltaic performances in the visible spectrum are simulated. Ultrathin layered semiconductors such as Molybdenum disulfide (MoS2), Tungsten disulfide (WS2), Molybdenum di-selenide (MoSe2), Tungsten di-selenide (WSe2), Molybdenum ditelluride (MoTe2), and Tungsten ditelluride (WTe2) can create strong interference by damping optical mode in their multilayer form and increase light absorption at their heterojunctions with noble metals. From our simulation, it is observed that this absorbance can reach up to 94% when the semiconductors are placed on a gold substrate. The optimum thickness of these semiconductors in their heterostructures with gold is analyzed to create resonant absorption to generate the maximum amount of current density. The power conversion efficiency of the designed Schottky junction solar cells is calculated from their current density vs bias voltage characteristics that ranges from 1.57% to 6.80%. Moreover, the absorption coefficient, dark current characteristic, electric field intensity distribution in the device, and carrier generation rate during light illumination are presented with a view to characterizing and comparing among the parameters of TMDC based nanoscale solar cell.
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41

Khan, Md Azmot Ullah, Naheem Olakunle Adesina i Jian Xu. "Near Unity Absorbance and Photovoltaic Properties of TMDC/Gold Heterojunction for Solar Cell Application". Key Engineering Materials 918 (25.04.2022): 97–105. http://dx.doi.org/10.4028/p-uz62m4.

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In this paper, near unity broadband absorption of Van der Waals semiconductors on a metallic substrate, and their photovoltaic performances in the visible spectrum are simulated. Ultrathin layered semiconductors such as Molybdenum disulfide (MoS2), Tungsten disulfide (WS2), Molybdenum di-selenide (MoSe2), Tungsten di-selenide (WSe2), Molybdenum ditelluride (MoTe2), and Tungsten ditelluride (WTe2) can create strong interference by damping optical mode in their multilayer form and increase light absorption at their heterojunctions with noble metals. From our simulation, it is observed that this absorbance can reach up to 94% when the semiconductors are placed on a gold substrate. The optimum thickness of these semiconductors in their heterostructures with gold is analyzed to create resonant absorption to generate the maximum amount of current density. The power conversion efficiency of the designed Schottky junction solar cells is calculated from their current density vs bias voltage characteristics that ranges from 1.57% to 6.80%. Moreover, the absorption coefficient, dark current characteristic, electric field intensity distribution in the device, and carrier generation rate during light illumination are presented with a view to characterizing and comparing among the parameters of TMDC based nanoscale solar cell.
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42

Late, Dattatray J., i Claudia Wiemer. "Advances in low dimensional and 2D materials". AIP Advances 12, nr 11 (1.11.2022): 110401. http://dx.doi.org/10.1063/5.0129120.

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This special issue is focused on the advances in low-dimensional and 2D materials. 2D materials have gained much consideration recently due to their extraordinary properties. Since the isolation of single-layer graphene in Novoselov et al. [Science 306, 666–669 (2004)], the work on graphene analogs of 2D materials has progressed rapidly across the scientific and engineering fields. Over the last ten years, several 2D materials have been widely explored for technological applications. Moreover, the existence in nature of layered crystallographic structures where exotic properties emerge when the thickness is reduced to a few monolayers has enlarged the field of low-dimensional (i.e., quasi-2D) materials. The special topic aims to collect the recent advances in technologically relevant low-dimensional and 2D materials, such as graphene, layered semiconductors (e.g., MoS2, WS2, WSe2, PtSe2, MoTe2, Black-P, etc.), MXenes, and topological insulators, such as Bi2Te3, Sb2Te3, etc.). There is an urgent need for material innovations for the rapid development of the next technologies based on these materials. The scope of this special topic is to address recent trends in 2D materials and hybrid structures and their widespread applications in device technology and measurement.
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43

Gomes, Anderson S. L., Cecília L. A. V. Campos, Cid B. de Araújo, Melissa Maldonado, Manoel L. da Silva-Neto, Ali M. Jawaid, Robert Busch i Richard A. Vaia. "Intensity-Dependent Optical Response of 2D LTMDs Suspensions: From Thermal to Electronic Nonlinearities". Nanomaterials 13, nr 15 (7.08.2023): 2267. http://dx.doi.org/10.3390/nano13152267.

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The nonlinear optical (NLO) response of photonic materials plays an important role in the understanding of light–matter interaction as well as pointing out a diversity of photonic and optoelectronic applications. Among the recently studied materials, 2D-LTMDs (bi-dimensional layered transition metal dichalcogenides) have appeared as a beyond-graphene nanomaterial with semiconducting and metallic optical properties. In this article, we review most of our work in studies of the NLO response of a series of 2D-LTMDs nanomaterials in suspension, using six different NLO techniques, namely hyper Rayleigh scattering, Z-scan, photoacoustic Z-scan, optical Kerr gate, and spatial self-phase modulation, besides the Fourier transform nonlinear optics technique, to infer the nonlinear optical response of semiconducting MoS2, MoSe2, MoTe2, WS2, semimetallic WTe2, ZrTe2, and metallic NbS2 and NbSe2. The nonlinear optical response from a thermal to non-thermal origin was studied, and the nonlinear refraction index and nonlinear absorption coefficient, where present, were measured. Theoretical support was given to explain the origin of the nonlinear responses, which is very dependent on the spectro-temporal regime of the optical source employed in the studies.
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Wang, Yaqian, Yongli Shen, Xiong Xiao, Linxiu Dai, Shuang Yao i Changhua An. "Topology conversion of 1T MoS2 to S-doped 2H-MoTe2 nanosheets with Te vacancies for enhanced electrocatalytic hydrogen evolution". Science China Materials 64, nr 9 (29.03.2021): 2202–11. http://dx.doi.org/10.1007/s40843-020-1612-y.

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Xie, Yuan, Enxiu Wu, Shuangqing Fan, Guangyu Geng, Xiaodong Hu, Linyan Xu, Sen Wu, Jing Liu i Daihua Zhang. "Modulation of MoTe2/MoS2 van der Waals heterojunctions for multifunctional devices using N2O plasma with an opposite doping effect". Nanoscale 13, nr 16 (2021): 7851–60. http://dx.doi.org/10.1039/d0nr08814e.

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We developed a highly effective N2O plasma process to treat MoTe2/MoS2 heterojunctions. This allowed us to adjust the hole and electron concentrations in the two materials independently and simultaneously through a single-step treatment.
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Diaz, Horacio Coy, Yujing Ma, Redhouane Chaghi i Matthias Batzill. "High density of (pseudo) periodic twin-grain boundaries in molecular beam epitaxy-grown van der Waals heterostructure: MoTe2/MoS2". Applied Physics Letters 108, nr 19 (9.05.2016): 191606. http://dx.doi.org/10.1063/1.4949559.

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Pezeshki, Atiye, Seyed Hossein Hosseini Shokouh, Pyo Jin Jeon, Iman Shackery, Jin Sung Kim, Il-Kwon Oh, Seong Chan Jun, Hyungjun Kim i Seongil Im. "Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors". ACS Nano 10, nr 1 (4.12.2015): 1118–25. http://dx.doi.org/10.1021/acsnano.5b06419.

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Cho, Yongjae, Ji Hoon Park, Minju Kim, Yeonsu Jeong, Sanghyuck Yu, June Yeong Lim, Yeonjin Yi i Seongil Im. "Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n-MoS2 and p-MoTe2 Transistors". Nano Letters 19, nr 4 (11.03.2019): 2456–63. http://dx.doi.org/10.1021/acs.nanolett.9b00019.

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Caturello, Naidel A. M. S., Rafael Besse, Augusto C. H. Da Silva, Diego Guedes-Sobrinho, Matheus P. Lima i Juarez L. F. Da Silva. "Ab Initio Investigation of Atomistic Insights into the Nanoflake Formation of Transition-Metal Dichalcogenides: The Examples of MoS2, MoSe2, and MoTe2". Journal of Physical Chemistry C 122, nr 47 (2.11.2018): 27059–69. http://dx.doi.org/10.1021/acs.jpcc.8b07127.

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Varadwaj, Pradeep, Helder Marques, Arpita Varadwaj i Koichi Yamashita. "Chalcogen···Chalcogen Bonding in Molybdenum Disulfide, Molybdenum Diselenide and Molybdenum Ditelluride Dimers as Prototypes for a Basic Understanding of the Local Interfacial Chemical Bonding Environment in 2D Layered Transition Metal Dichalcogenides". Inorganics 10, nr 1 (12.01.2022): 11. http://dx.doi.org/10.3390/inorganics10010011.

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An attempt was made, using computational methods, to understand whether the intermolecular interactions in the dimers of molybdenum dichalcogenides MoCh2 (Ch = chalcogen, element of group 16, especially S, Se and Te) and similar mixed-chalcogenide derivatives resemble the room temperature experimentally observed interactions in the interfacial regions of molybdenites and their other mixed-chalcogen derivatives. To this end, MP2(Full)/def2-TVZPPD level electronic structure calculations on nine dimer systems, including (MoCh2)2 and (MoChCh′2)2 (Ch, Ch′ = S, Se and Te), were carried out not only to demonstrate the energetic stability of these systems in the gas phase, but also to reproduce the intermolecular geometrical properties that resemble the interfacial geometries of 2D layered MoCh2 systems reported in the crystalline phase. Among the six DFT functionals (single and double hybrids) benchmarked against MP2(full), it was found that the double hybrid functional B2PLYPD3 has some ability to reproduce the intermolecular geometries and binding energies. The intermolecular geometries and binding energies of all nine dimers are discussed, together with the charge density topological aspects of the chemical bonding interactions that emerge from the application of the quantum theory of atoms in molecules (QTAIM), the isosurface topology of the reduced density gradient noncovalent index, interaction region indicator and independent gradient model (IGM) approaches. While the electrostatic surface potential model fails to explain the origin of the S···S interaction in the (MoS2)2 dimer, we show that the intermolecular bonding interactions in all nine dimers examined are a result of hyperconjugative charge transfer delocalizations between the lone-pair on (Ch/Ch′) and/or the π-orbitals of a Mo–Ch/Ch′ bond of one monomer and the dπ* anti-bonding orbitals of the same Mo–Ch/Ch′ bond in the second monomer during dimer formation, and vice versa. The HOMO–LUMO gaps calculated with the MN12-L functional were 0.9, 1.0, and 1.1 eV for MoTe2, MoSe2 and MoS2, respectively, which match very well with the solid-state theoretical (SCAN-rVV10)/experimental band gaps of 0.75/0.88, 0.90/1.09 and 0.93/1.23 eV of the corresponding systems, respectively. We observed that the gas phase dimers examined are perhaps prototypical for a basic understanding of the interfacial/inter-layer interactions in molybdenum-based dichalcogenides and their derivatives.
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