Artykuły w czasopismach na temat „MOSFET”
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Gonçalves Filho, Luiz C., i Luiz A. P. Santos. "An electronic dosimeter for diagnostic X-ray beams based on a differential amplifier circuit with MOSFETs". EPJ Web of Conferences 288 (2023): 09001. http://dx.doi.org/10.1051/epjconf/202328809001.
Pełny tekst źródłaLi, Ruizhe. "The advantages and short circuit characteristics of SiC MOSFETs". Applied and Computational Engineering 49, nr 1 (22.03.2024): 58–64. http://dx.doi.org/10.54254/2755-2721/49/20241059.
Pełny tekst źródłaKaur Sidhu, Rajdevinder, Jagpal Singh Ubhi, Alpana Agarwal i Balwinder Raj. "Design and Comparative Analysis of Silicon and GaAs MOSFET for Low Power Applications". Journal of Nanoelectronics and Optoelectronics 18, nr 8 (1.08.2023): 915–23. http://dx.doi.org/10.1166/jno.2023.3460.
Pełny tekst źródłaLuo, Qixiao. "Research on the advantages and development status of new material MOSFET". Highlights in Science, Engineering and Technology 33 (21.02.2023): 210–18. http://dx.doi.org/10.54097/hset.v33i.5313.
Pełny tekst źródłaChek Yee, Ooi, Mok Kai Ming i Wong Pei Voon. "DEVICE AND CIRCUIT LEVEL SIMULATION STUDY OF NOR GATE LOGIC FAMILIES DESIGNED USING NANO-MOSFETs". Platform : A Journal of Science and Technology 4, nr 1 (31.05.2021): 73. http://dx.doi.org/10.61762/pjstvol4iss1art11064.
Pełny tekst źródłaAlbrecht, Matthaeus, Tobias Erlbacher, Anton J. Bauer i Lothar Frey. "Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs". Materials Science Forum 858 (maj 2016): 821–24. http://dx.doi.org/10.4028/www.scientific.net/msf.858.821.
Pełny tekst źródłaYoshioka, Hironori, Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka i Hajime Okumura. "Characterization of Interface State Density from Subthreshold Slope of MOSFETs at Low Temperatures (≥ 10 K)". Materials Science Forum 821-823 (czerwiec 2015): 745–48. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.745.
Pełny tekst źródłaChe, Haoming. "Simulation study on dynamic characteristics of SiC MOSFET". Theoretical and Natural Science 5, nr 1 (25.05.2023): 805–14. http://dx.doi.org/10.54254/2753-8818/5/20230507.
Pełny tekst źródłaAhn, Tae Jun, i Yun Seop Yu. "Interface Trap Charge Effects of Monolithic 3D Junctionless Field-Effect Transistors (JLFET) Inverter". Journal of Nanoscience and Nanotechnology 21, nr 8 (1.08.2021): 4252–57. http://dx.doi.org/10.1166/jnn.2021.19388.
Pełny tekst źródłaLichtenwalner, Daniel J., Brett Hull, Vipindas Pala, Edward Van Brunt, Sei-Hyung Ryu, Joe J. Sumakeris, Michael J. O’Loughlin, Albert A. Burk, Scott T. Allen i John W. Palmour. "Performance and Reliability of SiC Power MOSFETs". MRS Advances 1, nr 2 (2016): 81–89. http://dx.doi.org/10.1557/adv.2015.57.
Pełny tekst źródłaMohd Salleh, Siti NorFarah Nadia, Alhan Farhanah Abd Rahim, Nurul Syuhadah Mohd Razali, Rosfariza Radzali, Ainorkhilah Mahmood i Irni Hamiza Hamzah. "Study of Strained-SiGe Channel P-MOSFET Using Silvaco TCAD: Impact of Channel Thickness". Key Engineering Materials 947 (31.05.2023): 39–45. http://dx.doi.org/10.4028/p-3a337l.
Pełny tekst źródłaFunaki, Tsuyoshi, Yuki Nakano i Takashi Nakamura. "Comparative Study of SiC MOSFETs in High Voltage Switching Operation". Materials Science Forum 717-720 (maj 2012): 1081–84. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1081.
Pełny tekst źródłaChen, Jiangui, Yan Li i Mei Liang. "A Gate Driver Based on Variable Voltage and Resistance for Suppressing Overcurrent and Overvoltage of SiC MOSFETs". Energies 12, nr 9 (29.04.2019): 1640. http://dx.doi.org/10.3390/en12091640.
Pełny tekst źródłaKong, Moufu, Zewei Hu, Ronghe Yan, Bo Yi, Bingke Zhang i Hongqiang Yang. "A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance". Journal of Semiconductors 44, nr 5 (1.05.2023): 052801. http://dx.doi.org/10.1088/1674-4926/44/5/052801.
Pełny tekst źródłaChaudhry, Amit, i Nath Roy. "A comparative study of hole and electron inversion layer quantization in MOS structures". Serbian Journal of Electrical Engineering 7, nr 2 (2010): 185–93. http://dx.doi.org/10.2298/sjee1002185c.
Pełny tekst źródłaEbiike, Yuji, Toshikazu Tanioka, Masayuki Furuhashi, Ai Osawa i Masayuki Imaizumi. "Characteristics of High-Threshold-Voltage Low-Loss 4H-SiC MOSFETs with Improved MOS Cell Structure". Materials Science Forum 858 (maj 2016): 829–32. http://dx.doi.org/10.4028/www.scientific.net/msf.858.829.
Pełny tekst źródłaNa, Jaeyeop, i Kwangsoo Kim. "A Novel 4H-SiC Double Trench MOSFET with Built-In MOS Channel Diode for Improved Switching Performance". Electronics 12, nr 1 (26.12.2022): 92. http://dx.doi.org/10.3390/electronics12010092.
Pełny tekst źródłaQiu, Guoqing, Kedi Jiang, Shengyou Xu, Xin Yang i Wei Wang. "Modeling and analysis of the characteristics of SiC MOSFET". Journal of Physics: Conference Series 2125, nr 1 (1.11.2021): 012051. http://dx.doi.org/10.1088/1742-6596/2125/1/012051.
Pełny tekst źródłaSingh, Ajay Kumar. "Modeling of electrical behavior of undoped symmetric Double-Gate (DG) MOSFET using carrier-based approach". COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 38, nr 2 (4.03.2019): 815–28. http://dx.doi.org/10.1108/compel-08-2018-0327.
Pełny tekst źródłaDzakwan, Muhammad Irfan, Iwan Setiawan, Agung Warsito i Trias Andromeda. "PERANCANGAN KONVERTER ARUS SEARAH TIPE PENURUN TEGANGAN DENGAN MOSFET SINKRON DAN TANPA MOSFET SINKRON". TRANSIENT 7, nr 1 (21.03.2018): 160. http://dx.doi.org/10.14710/transient.7.1.160-165.
Pełny tekst źródłaHan, Ki Jeong, B. Jayant Baliga i Woong Je Sung. "1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results". Materials Science Forum 924 (czerwiec 2018): 684–88. http://dx.doi.org/10.4028/www.scientific.net/msf.924.684.
Pełny tekst źródłaNa, Jaeyeop, Minju Kim i Kwangsoo Kim. "High Performance 3.3 kV SiC MOSFET Structure with Built-In MOS-Channel Diode". Energies 15, nr 19 (22.09.2022): 6960. http://dx.doi.org/10.3390/en15196960.
Pełny tekst źródłaPetrosyants, Konstantin O., Igor A. Kharitonov i Lev M. Sambursky. "Hardware-Software Subsystem for MOSFETs Characteristic Measurement and Parameter Extraction with Account for Radiation Effects". Advanced Materials Research 718-720 (lipiec 2013): 750–55. http://dx.doi.org/10.4028/www.scientific.net/amr.718-720.750.
Pełny tekst źródłaHsu, Fu Jen, Cheng Tyng Yen, Hsiang Ting Hung, Jia Wei Hu i Chih Fang Huang. "High Density 65W AC-DC Adaptor Enabled by SiC MOSFET with Ultralow V<sub>GS(on)</sub>". Key Engineering Materials 948 (6.06.2023): 89–93. http://dx.doi.org/10.4028/p-tuypqj.
Pełny tekst źródłaPatel, Dax, Soham Sojitra, Jay Kadia, Bhavik Chaudhary i Rutu Parekh. "Comparative Study of Double Gate and Silicon on Insulator MOSFET by Varying Device Parameters". Trends in Sciences 19, nr 7 (14.03.2022): 3216. http://dx.doi.org/10.48048/tis.2022.3216.
Pełny tekst źródłaDevadas, Shree Chakravarthy, i Ramani Kannan. "COMPARATIVE ANALYSIS OF THERMAL STRESS OF Si AND SiC MOSFETs". Platform : A Journal of Engineering 5, nr 2 (30.06.2021): 23. http://dx.doi.org/10.61762/pajevol5iss2art12810.
Pełny tekst źródłaAllen, Scott, Vipindas Pala, E. VanBrunt, Brett Hull, Lin Cheng, S. Ryu, Jim Richmond, M. O’Loughlin, Al Burk i J. Palmour. "Next-Generation Planar SiC MOSFETs from 900 V to 15 kV". Materials Science Forum 821-823 (czerwiec 2015): 701–4. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.701.
Pełny tekst źródłaDas, Sanat, Bibek Chettri, Prasanna Karki, Bhakta Kunwar, Pronita Chettri i Bikash Sharma. "Impact of high-k metal oxide as gate dielectric on the certain electrical properties of silicon nanowire field-effect transistors: A simulation study". Facta universitatis - series: Electronics and Energetics 36, nr 4 (2023): 553–65. http://dx.doi.org/10.2298/fuee2304553d.
Pełny tekst źródłaLiu, Hao, Jiaxing Wei, Zhaoxiang Wei, Siyang Liu i Longxing Shi. "Experimental Comparison of a New 1.2 kV 4H-SiC Split-Gate MOSFET with Conventional SiC MOSFETs in Terms of Reliability Robustness". Electronics 12, nr 11 (5.06.2023): 2551. http://dx.doi.org/10.3390/electronics12112551.
Pełny tekst źródłaKannan, Ramani, Saranya Krishnamurthy, Chay Che Kiong i Taib B. Ibrahim. "Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs". International Journal of Electrical and Computer Engineering (IJECE) 9, nr 2 (1.04.2019): 1453. http://dx.doi.org/10.11591/ijece.v9i2.pp1453-1460.
Pełny tekst źródłaTaberkit, Amine Mohammed, Ahlam Guen-Bouazza i Benyounes Bouazza. "Modeling and Simulation of Biaxial Strained P-MOSFETs: Application to a Single and Dual Channel Heterostructure". International Journal of Electrical and Computer Engineering (IJECE) 8, nr 1 (1.02.2018): 421. http://dx.doi.org/10.11591/ijece.v8i1.pp421-428.
Pełny tekst źródłaGrabiński, Władysław, Matthias Bucher, Jean-Michel Sallese i Franc¸ois Krummenacher. "Advanced compact modeling of the deep submicron technologies". Journal of Telecommunications and Information Technology, nr 3-4 (30.12.2000): 31–42. http://dx.doi.org/10.26636/jtit.2000.3-4.29.
Pełny tekst źródłaKawahara, Koutarou, Shiro Hino, Koji Sadamatsu, Yukiyasu Nakao, Toshiaki Iwamatsu, Shuhei Nakata, Shingo Tomohisa i Satoshi Yamakawa. "Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs". Materials Science Forum 924 (czerwiec 2018): 663–66. http://dx.doi.org/10.4028/www.scientific.net/msf.924.663.
Pełny tekst źródłaCho, Geunho. "A Study on the Design Method of Hybrid MOSFET-CNTFET Based SRAM – A Secondary Publication". Journal of Electronic Research and Application 8, nr 1 (20.02.2024): 106–12. http://dx.doi.org/10.26689/jera.v8i1.6115.
Pełny tekst źródłaHino, Shiro, Masanao Ito, Naruhisa Miura, Masayuki Imaizumi i Satoshi Yamakawa. "Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm2 SiC-MOSFET". Materials Science Forum 778-780 (luty 2014): 963–66. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.963.
Pełny tekst źródłaAtaseven, Ismail, Ilker Sahin i Salih Baris Ozturk. "Design and Implementation of a Paralleled Discrete SiC MOSFET Half-Bridge Circuit with an Improved Symmetric Layout and Unique Laminated Busbar". Energies 16, nr 6 (21.03.2023): 2903. http://dx.doi.org/10.3390/en16062903.
Pełny tekst źródłaCha, Kyuhyun, i Kwangsoo Kim. "Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications". Energies 14, nr 21 (4.11.2021): 7305. http://dx.doi.org/10.3390/en14217305.
Pełny tekst źródłaLIU, WEIDONG, i CHENMING HU. "BSIM3V3 MOSFET MODEL". International Journal of High Speed Electronics and Systems 09, nr 03 (wrzesień 1998): 671–701. http://dx.doi.org/10.1142/s0129156498000294.
Pełny tekst źródłaEjury, Jens. "Advanced Thermal Simulation Model for Power MOSFETs". International Symposium on Microelectronics 2013, nr 1 (1.01.2013): 000598–603. http://dx.doi.org/10.4071/isom-2013-wa64.
Pełny tekst źródłaBakhoum, Ezzat G., i Cheng Zhang. "Field Effect Transistor with Nanoporous Gold Electrode". Micromachines 14, nr 6 (28.05.2023): 1135. http://dx.doi.org/10.3390/mi14061135.
Pełny tekst źródłaVanitha, Dr D. "Comparative Analysis of Power switches MOFET and IGBT Used in Power Applications". International Journal on Recent Technologies in Mechanical and Electrical Engineering 9, nr 5 (31.05.2022): 01–09. http://dx.doi.org/10.17762/ijrmee.v9i5.368.
Pełny tekst źródłaVanitha, Dr D. "Comparative Analysis of Power switches MOFET and IGBT Used in Power Applications". International Journal on Recent Technologies in Mechanical and Electrical Engineering 9, nr 3 (23.09.2022): 01–09. http://dx.doi.org/10.17762/ijrmee.v9i3.368.
Pełny tekst źródłaGreen, Ronald, Aivars J. Lelis i Daniel B. Habersat. "Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing". Materials Science Forum 717-720 (maj 2012): 1085–88. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1085.
Pełny tekst źródłaOkada, Masakazu, Teruaki Kumazawa, Yusuke Kobayashi, Masakazu Baba i Shinsuke Harada. "Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS". Materials Science Forum 1004 (lipiec 2020): 795–800. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.795.
Pełny tekst źródłaWu, Li-Feng, Yong Guan, Xiao-Juan Li i Jie Ma. "Anomaly Detection and Degradation Prediction of MOSFET". Mathematical Problems in Engineering 2015 (2015): 1–5. http://dx.doi.org/10.1155/2015/573980.
Pełny tekst źródłaGu, Jie, Qingzhu Zhang, Zhenhua Wu, Jiaxin Yao, Zhaohao Zhang, Xiaohui Zhu, Guilei Wang i in. "Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs". Nanomaterials 11, nr 2 (26.01.2021): 309. http://dx.doi.org/10.3390/nano11020309.
Pełny tekst źródłaAbdelmalek, N., F. Djeffal, M. Meguellati i T. Bendib. "Numerical Analysis of Nanoscale Junctionless MOSFET Including Effects of Hot-Carrier Induced Interface Charges". Advanced Materials Research 856 (grudzień 2013): 137–41. http://dx.doi.org/10.4028/www.scientific.net/amr.856.137.
Pełny tekst źródłaJena, Biswajit, Sidhartha Dash, Soumya Ranjan Routray i Guru Prasad Mishra. "Inner-Gate-Engineered GAA MOSFET to Enhance the Electrostatic Integrity". Nano 14, nr 10 (październik 2019): 1950128. http://dx.doi.org/10.1142/s1793292019501285.
Pełny tekst źródłaIbrahim, Mesfin Seid, Waseem Abbas, Muhammad Waseem, Chang Lu, Hiu Hung Lee, Jiajie Fan i Ka-Hong Loo. "Long-Term Lifetime Prediction of Power MOSFET Devices Based on LSTM and GRU Algorithms". Mathematics 11, nr 15 (26.07.2023): 3283. http://dx.doi.org/10.3390/math11153283.
Pełny tekst źródłaGowthaman, Naveenbalaji, i Viranjay Srivastava. "Analysis of <i>InN/La<sub>2</sub>O<sub>3</sub></i> Twosome for Double-Gate MOSFETs for Radio Frequency Applications". Materials Science Forum 1048 (4.01.2022): 147–57. http://dx.doi.org/10.4028/www.scientific.net/msf.1048.147.
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