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Artykuły w czasopismach na temat "MOSc-HEMT"
Viey, A. G., W. Vandendaele, M. A. Jaud, L. Gerrer, X. Garros, J. Cluzel, S. Martin i in. "Influence of Carbon on pBTI Degradation in GaN-on-Si E-Mode MOSc-HEMT". IEEE Transactions on Electron Devices 68, nr 4 (kwiecień 2021): 2017–24. http://dx.doi.org/10.1109/ted.2021.3050127.
Pełny tekst źródłaRocha, P. Fernandes Paes Pinto, L. Vauche, B. Mohamad, W. Vandendaele, E. Martinez, M. Veillerot, T. Spelta i in. "Impact of Post-Deposition Anneal on ALD Al2O3/etched GaN Interface for Gate-First MOSc-HEMT". Power Electronic Devices and Components, styczeń 2023, 100033. http://dx.doi.org/10.1016/j.pedc.2023.100033.
Pełny tekst źródłaSpelta, Tarek, Marc Veillerot, Eugénie Martinez, Denis Mariolle, Roselyne Templier, Nicolas Chevalier, Pedro Fernandes Paes Pinto Rocha, Bassem Salem, Laura Vauche i Bérangère Hyot. "Impact of etching process on Al2O3/GaN interface for MOSc-HEMT devices combining ToF-SIMS, HAXPES and AFM". Solid-State Electronics, sierpień 2023, 108743. http://dx.doi.org/10.1016/j.sse.2023.108743.
Pełny tekst źródłaRozprawy doktorskie na temat "MOSc-HEMT"
Leurquin, Camille. "Etude des mécanismes de dégradation et Fiabilité dynamique des composants GaN sur Si". Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT025.
Pełny tekst źródłaTo contribute significantly to the global reduction of energy consumption, it is essential to develop electrical energy converters based on new power components, such as GaN on Si. These more compact and efficient components offer promising prospects. MOS-HEMT (MOS channel High Electron Mobility Transistor) power transistors based on GaN-on-Si, developed at CEA-Leti, target the market for low-voltage power converters (< 900 V). This architecture has demonstrated excellent performance in both static and dynamic aspects. However, temporal degradations under gate and drain stresses, as well as the degradation mechanisms, remain relatively unknown. The objective of this thesis is to explore the instabilities of the on-state resistance RON and threshold voltage VTH of these transistors, both during and after stresses of several hundred volts applied to the component's drain. This study was conducted using specially designed innovative electrical characterization techniques called HVBTI. A significant portion of the work focused on identifying the defects causing these deviations and understanding the underlying physical mechanisms involved in these degradations. The influence of epitaxial layers and architecture on the instability of VTH has been thoroughly investigated. While these studies have significantly enriched our understanding of GaN-on-Si transistors manufactured at CEA-Leti, the comprehension of RON and VTH instabilities still requires further exploration
Barranger, Damien. "Développement de transistor AlGaN/GaN E-mode sur substrat silicium 200 mm compatible avec une salle blanche CMOS". Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI135.
Pełny tekst źródłaThis thesis focuses on the development of AlGaN/GaN heterojunction components or HEMT. This heterojunction has an excellent mobility (2000 cm² / V.s) thanks to the appearance of an electron gas in the GaN. However, the components made with this heterojunction are normally-on. For safety reasons particularly, normally-off components are required. There are many ways to make normally-off transistors based on AlGaN/GaN heterojunction. In this thesis we chose to study a MOSCHEMT strucutre. This structure is characterized by a MOS type gate and HEMT type accesses. The study shows the effects of technological parameters (epitaxy, process and component structure) on the electrical behaviour of the components. Another structure studied is the monolithic cascode, which can improve on-state performance of the MOSC-HEMT without damaging the characteristic in reverse of the components. The objective of this thesis is to design a normally-off component on silicon substrate 200 mm with a threshold voltage higher than 1V, able to hold 600 V in reverse, with a current rating between 10 A and 30 A and compatible in CMOS clean room. The manuscript has four chapters. Through a bibliographic review, the first chapter presents the different methods to obtain a normally-off transistor based on gallium nitride. This chapter presents and justifies the technological choice of CEA-LETI. The second chapter presents the models as well as the methods of characterizations used during the thesis. The third chapter deals with the results obtained by varying the manufacturing parameters on the MOSC-HEMTs. Finally, the fourth chapter shows a study on innovative cascode technology. This structure must make it possible to increase the breakdown voltage of the transistors without damaging the on state
Streszczenia konferencji na temat "MOSc-HEMT"
Viey, A. G., W. Vandendaele, M. A. Jaud, J. Cluzel, J. P. Barnes, S. Martin, A. Krakovinsky i in. "Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT". W 2019 IEEE International Electron Devices Meeting (IEDM). IEEE, 2019. http://dx.doi.org/10.1109/iedm19573.2019.8993588.
Pełny tekst źródłaViey, A. G., W. Vandendaele, M. A. Jaud, L. Gerrer, X. Garros, J. Cluzel, S. Martin i in. "Carbon-related pBTI degradation mechanisms in GaN-on-Si E-mode MOSc-HEMT". W 2020 IEEE International Electron Devices Meeting (IEDM). IEEE, 2020. http://dx.doi.org/10.1109/iedm13553.2020.9371938.
Pełny tekst źródłaVandendaele, W., X. Garros, T. Lorin, E. Morvan, A. Torres, R. Escoffier, M. A. Jaud, M. Plissonnier i F. Gaillard. "A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT". W 2018 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2018. http://dx.doi.org/10.1109/irps.2018.8353580.
Pełny tekst źródłaViey, A. G., W. Vandendaele, MA Jaud, R. Gwoziecki, A. Torres, M. Plissonnier, F. Gaillard i in. "Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT". W 2019 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2019. http://dx.doi.org/10.1109/irps.2019.8720554.
Pełny tekst źródłaLe Royer, C., B. Mohamad, J. Biscarrat, L. Vauche, R. Escoffier, J. Buckley, S. Becu i in. "Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture". W 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2022. http://dx.doi.org/10.1109/ispsd49238.2022.9813672.
Pełny tekst źródłaViey, A. G., W. Vandendaele, M. A. Jaud, J. Coignus, J. Cluzel, A. Krakovinsky, S. Martin i in. "Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT". W 2021 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2021. http://dx.doi.org/10.1109/irps46558.2021.9405221.
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