Rozprawy doktorskie na temat „Molecular beam epitaxy”
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Leong, Weng Yee. "Silicon molecular beam epitaxy". Thesis, London Metropolitan University, 1985. http://repository.londonmet.ac.uk/3359/.
Pełny tekst źródłaBenz, Rudolph G. II. "Surface growth kinetics in molecular beam epitxay and gas source molecular beam epitaxy of CdTe". Diss., Georgia Institute of Technology, 1992. http://hdl.handle.net/1853/30421.
Pełny tekst źródłaEricsson, Leif. "Silicon/Germanium Molecular Beam Epitaxy". Thesis, Karlstad University, Division for Engineering Sciences, Physics and Mathematics, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:kau:diva-146.
Pełny tekst źródłaMolecular Beam Epitaxy (MBE) is a well-established method to grow low-dimensional structures for research applications. MBE has given many contributions to the rapid expanding research-area of nano-technology and will probably continuing doing so. The MBE equipment, dedicated for Silicon/Germanium (Si/Ge) systems, at Karlstads University (Kau) has been studied and started for the first time. In the work of starting the system, all the built in interlocks has been surveyed and connected, and the different subsystems has been tested and evaluated. Service supplies in the form of compressed air, cooling water and electrical power has been connected. The parts of the system, their function and some of the theory behind them are described.
The theoretical part of this master’s thesis is focused on low-dimensional structures, so-called quantum wells, wires and dots, that all are typical MBE-built structures. Physical effects, and to some extent the technical applications, of these structures are studied and described.
The experimental part contains the MBE growth of a Si/Ge quantum well (QW) structure and characterisation by Auger Electron Spectroscopy (AES). The structure, consisting of three QW of Si0,8Ge0,2 separated by thicker Si layers, was built at Linköpings University (LiU) and characterised at Chalmers University of Technology (CTH). The result of the characterisation was not the expected since almost no Ge content could be discovered but an extended characterisation may give another result.
Keywords: Silicon, Germanium, Molecular Beam Epitaxy, MBE, Quantum wells
Molecular Beam Epitaxy (MBE) är en väl etablerad metod när det gäller tillverkning av låg-dimensionella strukturer för forskningsändamål och lämpar sig väl för användning inom det expanderande forskningsområdet nanoteknologi. MBE utrustningen vid Karlstads universitet (Kau), som är avsedd för kisel/germanium (Si/Ge) strukturer, har studerats och startats för första gången. Under studien av systemet har alla inbyggda förreglingar utretts och anslutits och de olika delsystemen har testats och utvärderats. Tryckluft, kylvatten och el har utretts och anslutits. Systemets delar, deras funktion och i viss mån den bakomliggande teorin har studerats.
Den teoretiska delen av detta arbete är inriktad mot låg-dimensionella strukturer d.v.s. kvant brunnar, kvanttrådar och kvantprickar, som alla är strukturer lämpliga för framställning i MBE processer. De fysikaliska effekterna och i viss mån de tekniska tillämpningarna för dessa strukturer har studerats.
Den experimentella delen består av MBE tillväxt av en Si/Ge kvantbrunn-struktur och karakterisering m.h.a. Auger Electron Spectroscopy (AES). Tillväxten av strukturen, som består av tre kvantbrunnar av Si0,8Ge0,2 separerade av tjockare Si-lager, utfördes på Linköpings Universitet (LiU) och karakteriseringen utfördes på Chalmers Tekniska Högskola (CTH). Resultatet av karakteriseringen var inte det förväntade då knappast något Ge innehåll kunde detekteras men en utökad undersökning skulle kanske ge ett annat resultat.
Sökord: Kisel, germanium, Molecular Beam Epitaxy, MBE, kvantbrunn
鄭聯喜 i Lianxi Zheng. "Growth kinetics of GaN during molecular beam epitaxy". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2001. http://hub.hku.hk/bib/B31242741.
Pełny tekst źródłaPindoria, Govind. "Silicon molecular beam epitaxy : doping and material aspects". Thesis, University of Warwick, 1990. http://wrap.warwick.ac.uk/106729/.
Pełny tekst źródłaSherman, Edward. "Renormalised field theory for ideal molecular-beam epitaxy". Thesis, Imperial College London, 2013. http://hdl.handle.net/10044/1/10961.
Pełny tekst źródłaZheng, Lianxi. "Growth kinetics of GaN during molecular beam epitaxy". Hong Kong : University of Hong Kong, 2001. http://sunzi.lib.hku.hk/hkuto/record.jsp?B23316639.
Pełny tekst źródłaJabeen, Fauzia. "III-V semiconducting nanowires by molecular beam epitaxy". Doctoral thesis, Università degli studi di Trieste, 2009. http://hdl.handle.net/10077/3097.
Pełny tekst źródłaThis thesis is devoted to the study of the growth of III-V nanowires (NWs) by catalyst assisted and catalyst free molecular beam epitaxy (MBE). The nanostructures have been routinely characterized by scanning electron microscopy (SEM) and, to a minor extent by transmission electron microscopy (TEM). X-ray photoemission spectroscopy (XPS), scanning photoemission microscopy (SPEM), extended X-ray absrorption fi ne structure analysis (EXAFS), photoluminescence (PL) and trans- port measurements have given an important contribution on specifi c topics. The first section of this thesis reports on GaAs, InAs, and InGaAs NWs growth by Au assisted MBE. A substrate treatment is proposed that improves uniformity in the NWS morphology. Thanks to a careful statistical analysis of the NWs shape and dimensions as a function of growth temperature and duration, evidence is found of radial growth of the NWs taking place together with the axial growth at the tip. This eff ect is interpreted in term of temperature dependent diff usion length of the cations on the NWs lateral surface. The control of the NWs radial growth allowed to grow core shell InGaAs/GaAs NWs, displaying superior optical quality. A new procedure is proposed to protect NWs surface from air exposure. This procedure allowed to perform ex-situ SPEM studies of electronic properties of the NWs. The second part of this thesis is devoted to Au-free NWs growth. GaAs and InAs NWs were successfully grown for the first time using Mn as catalyst. Incorporation of Mn in the NW is studied using EXAFS technique. It is shown that Mn atoms are incorporated in the body of GaAs NWs. Use of low growth temperature is suggested in order to improve the Mn incorporation inside GaAs NWs and obtain NWs with magnetic properties. Finally, growth of GaAs and InAs NWs on cleaved Si subtrate is demonstrated without the use of any outside metal catalyst. Two kinds of nanowires have been obtained. The experimental findings suggest that the two types of nanowires grow after di fferent growth processes.
Questa tesi e' dedicata allo studio della crescita di nanofili di semiconduttori III- V tramite epitassia da fasci molecolari (MBE) assistita da catalizzatore e senza l'uso di catalizzatori. Le nanostrutture sono state caratterizzate sistematicamente tramite microscopia elettronica a scansione (SEM), e in maniera minore microscopia elettronica in trasmissione (TEM). Altre tecniche come la spettroscopia di fotoemissione da raggi x (XPS), la microscopia da fotoemissione in scansione (SPEM), la spettroscopia di assorbimento x (in particolare la extended X-ray absorpition fine structure analysis (EXAFS)) la fotoluminescenza (PL), e il trasporto elettrico hanno dato importanti contributi su problematiche specifiche. La prima parte di questa tesi riguarda la crescita di nanofili di GaAs, InAs e InGaAs tramite MBE assistita da oro. Viene proposto un trattamento del substrato che migliora nettamente l'omogeneita' morfologica dei nanofili. Grazie ad un'attenta analisi statistica della forma e delle dimensioni dei nanofili in funzione della temperatura e del tempo di crescita e' stata dimostrata la crescita radiale dei nanofili, che avviene insieme alla crescita assiale che ha luogo alla punta del nanofilo. Le osservazioni sperimentali sono state interpretate in termini di dipendenza dalla temperatura della lunghezza di diffusione dei cationi sulle super ci laterali dei nanofili. Il controllo della crescita radiale ha permesso di crescere nanofili di InGaAs/GaAs core shell, costituiti cioe' da una anima centrale di InGaAs (core) e uno strato esterno di GaAs (shell) , che hanno dimostrato eccellente qualita' ottica. Viene quindi proposta una nuova procedura per proteggere la super ficie dei nanofili durante l'esposizione all'aria. Grazie a questa e' stato possibile realizzare ex-situ uno studio SPEM delle proprieta' elettroniche dei nanofili. La seconda parte della tesi riguarda la crescita di nanofili senza l'uso di oro. Viene per la prima volta dimostrata la possibilita' di crescere nanofili di GaAs e InAs usando il manganese come catalizzatore. L'incorporazione del Mn come impurezza nei nanofili e' stata studiata tramite EXAFS. Le misure hanno dimostrato che atomi di Mn sono effettivamente incorporate nel corpo dei nano fili. La crescita delle nanostrutture a temperatura piu' bassa potrebbe migliorare qualitativamente l'incorporazione del Mn e permettere la crescita di nanofili con proprieta' magnetiche. Viene in fine dimostrata la crescita di nanofili di GaAs e di InAs senza l'utilizzo di materiali diversi da quelli costituenti il semiconduttore. Tale risultato e' ottenuto su superfici sfaldate di silicio. Sono state osservate nanostrutture di due tipi, che sulla base dei dati sperimentali sembrano essere dovuti a due diversi meccanismi di crescita.
XXI Ciclo
1977
Devine, R. L. S. "Some kinetic and thermodynamic aspects of molecular beam epitaxy". Thesis, University of Glasgow, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.378055.
Pełny tekst źródłaSadofiev, Sergey. "Radical-source molecular beam epitaxy of ZnO-based heterostructures". Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2009. http://dx.doi.org/10.18452/16054.
Pełny tekst źródłaThis work focuses on the development of the novel growth approaches for the fabrication of Group II-oxide materials in the form of epitaxial films and heterostructures. It is shown that molecular-beam epitaxial growth far from thermal equilibrium allows one to overcome the standard solubility limit and to alloy ZnO with MgO or CdO in strict wurtzite phase up to mole fractions of several 10 %. In this way, a band-gap range from 2.2 to 4.4 eV can be covered. A clear layerby- layer growth mode controlled by oscillations in reflection high-energy electron diffraction makes it possible to fabricate atomically smooth heterointerfaces and well-defined quantum well structures exhibiting prominent band-gap related light emission in the whole composition range. On appropriately designed structures, laser action from the ultraviolet down to green wavelengths and up to room temperature is achieved. The properties and potential of the "state-of-the-art" materials are discussed in relation to the advantages for their applications in various optoelectronic devices.
Ratsch, Christian. "Morphological stability of facet growth on patterned substrates". Thesis, Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/27549.
Pełny tekst źródłaTong, Wusheng. "Chemical beam epitaxial growth of ZnS : growth kinetics and novel electroluminescent strutures". Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/31012.
Pełny tekst źródłaTriplett, Gregory Edward Jr. "Process modeling of InAs/AISb materials for high electron mobility transisitors grown by molecular beam epitaxy". Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/9458.
Pełny tekst źródłaPang, Ka-yan. "Nucleation and growth of GaN islands by molecular-beam epitaxy". Click to view the E-thesis via HKUTO, 2005. http://sunzi.lib.hku.hk/hkuto/record/B36776543.
Pełny tekst źródłaWhitwick, Michael Brian. "Surface evolution during gallium arsenide homoepitaxy with molecular beam epitaxy". Thesis, University of British Columbia, 2009. http://hdl.handle.net/2429/17455.
Pełny tekst źródłaMoseley, Michael William. "Study of III-nitride growth kinetics by molecular-beam epitaxy". Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/47641.
Pełny tekst źródłaEvans, R. J. "Electronic properties of molecular beam epitaxy structures prepared by regrowth". Thesis, University of Cambridge, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.598882.
Pełny tekst źródła吳誼暉 i Yee-fai Ng. "Heteroepitaxial growth of InN on GaN by molecular beam epitaxy". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B29797846.
Pełny tekst źródłaPang, Ka-yan, i 彭嘉欣. "Nucleation and growth of GaN islands by molecular-beam epitaxy". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2005. http://hub.hku.hk/bib/B36776543.
Pełny tekst źródłaKan, Xin, i 阚欣. "Growth of Bi2Se3 on Si substrate by molecular beam epitaxy". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2011. http://hub.hku.hk/bib/B46474687.
Pełny tekst źródłaLewis, Ryan B. "Molecular beam epitaxy growth technology and properties of GaAsBi alloys". Thesis, University of British Columbia, 2014. http://hdl.handle.net/2429/46478.
Pełny tekst źródłaSmith, David Warren. "Material quality issues in Si and SiGe molecular beam epitaxy". Thesis, University of Warwick, 1993. http://wrap.warwick.ac.uk/51967/.
Pełny tekst źródłaIsakov, I. "Semiconductor nanowires grown by molecular beam epitaxy for electronics applications". Thesis, University College London (University of London), 2015. http://discovery.ucl.ac.uk/1463378/.
Pełny tekst źródłaHe, Lei. "III-nitride Semiconductors Grown By Plasma Assisted Molecular Beam Epitaxy". VCU Scholars Compass, 2004. http://scholarscompass.vcu.edu/etd/1019.
Pełny tekst źródłaBaklenov, Oleg. "Molecular beam epitaxy of quantum dots for high speed photodetectors /". Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.
Pełny tekst źródłaNg, Yee-fai. "Heteroepitaxial growth of InN on GaN by molecular beam epitaxy /". Hong Kong : University of Hong Kong, 2002. http://sunzi.lib.hku.hk/hkuto/record.jsp?B25212175.
Pełny tekst źródłaRichards, Robert D. "Molecular beam epitaxy and characterisation of GaAsBi for photovoltaic applications". Thesis, University of Sheffield, 2014. http://etheses.whiterose.ac.uk/7549/.
Pełny tekst źródłaKim, Dong Jun. "Novel Growth of IngaAs/GaAs Nanostructures by Molecular Beam Epitaxy". DigitalCommons@USU, 2009. https://digitalcommons.usu.edu/etd/258.
Pełny tekst źródłaZannier, Valentina. "ZnSe nanowires by molecular beam epitaxy: growth mechanisms and properties". Doctoral thesis, Università degli studi di Trieste, 2015. http://hdl.handle.net/10077/11134.
Pełny tekst źródłaThis thesis is devoted to the study of the growth of Zinc Selenide (ZnSe) nanowires (NWs) by Au-assisted molecular beam epitaxy (MBE). The growth process consists in many steps which were individually investigated by means of in-situ and ex-situ spectroscopic and microscopic techniques. First, the formation of nanoparticles upon annealing of a thin Au film deposited on different substrates was studied by X-ray photoemission spectroscopy, grazing incident X-ray diffraction and scanning electron microscopy. The nanoparticles were used as seeds for the 1-dimensional ZnSe crystal growth by MBE through evaporation of Zn and Se from elemental solid sources. The obtained NWs were characterized by scanning and transmission electron microscopy and their optical properties were assessed by means of photoluminescence and cathodoluminescence measurements. This systematic investigation approach allowed us to understand the NWs growth mechanism and, as a consequence, to obtain the control over the NWs properties. Indeed, it was found that an interplay between substrate, seed particles and beam fluxes takes place and strongly affects the NWs growth mode. In particular, a chemical interaction between substrate and Au may occur during the annealing, changing chemical composition and physical state of the nanoparticles before the NWs growth. The vapour composition, i.e. the Zn-to-Se beam pressure ratio, can also modify the nanoparticles composition and the NWs growth mechanism. Therefore, by changing the growth conditions, it was possible to grow ZnSe NWs through different mechanisms, with important consequences on their properties, in terms of morphology, crystal quality and optical properties. Understanding the growth mechanism and its effects on the wires properties allowed us to achieve the control over the growth process and the selective growth of ZnSe nanowires with the desired properties. Vertically oriented ZnSe NWs with a defect-free hexagonal crystal structure were obtained on GaAs(111)B substrates, having either Au-Ga alloy nanoparticles or Au nanocrystals on their tips. Uniformly thin and straight blue-emitting ZnSe NWs were also grown on various substrates, after optimizing gold film thickness, annealing and growth temperature. The possible integration of such nanostructores in novel nanodevices was proposed and preliminary demonstrated.
XXVII Ciclo
1986
Rajavel, Damodaran. "Molecular beam epitaxial and chemical beam epitaxial growth and doping studies of (001) CdTe". Diss., Georgia Institute of Technology, 1991. http://hdl.handle.net/1853/11129.
Pełny tekst źródłaCollins, Gregory Earl. "New molecular electronic materials: Gas phase chemical sensors and organic molecular beam epitaxy". Diss., The University of Arizona, 1992. http://hdl.handle.net/10150/186045.
Pełny tekst źródłaShen, Xiu-Li. "Chemical beam epitaxial growth of (001) ZnS". Thesis, Georgia Institute of Technology, 1994. http://hdl.handle.net/1853/18896.
Pełny tekst źródłaLee, Tae-Woo. "An experimental and theoretical study of InGaP-GaAs double heterojunction bipolar transistors". Thesis, University of Sheffield, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.324090.
Pełny tekst źródłaPritchett, David Chu. "Novel III-Nitride growth by ultraviolet radiation assisted metal organic molecular beam epitaxy". Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28140.
Pełny tekst źródłaCommittee Chair: Doolittle, W. Alan; Committee Member: Carter, W. Brent; Committee Member: Ferguson, Ian T.; Committee Member: Frazier, A. Bruno; Committee Member: Rincon-Mora, Gabriel A.
Trapp, Alexander [Verfasser]. "Molecular beam epitaxy of quantum dots on misoriented GaAs(111)B by droplet epitaxy / Alexander Trapp". Paderborn : Universitätsbibliothek, 2019. http://d-nb.info/1185570764/34.
Pełny tekst źródłaLin, Jacob Che-Chen. "Fabrication of InAs/GaAs single quantum dots by molecular beam epitaxy". Thesis, University of Sheffield, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.487603.
Pełny tekst źródłaSewell, Richard H. "Investigation of mercury cadmium telluride heterostructures grown by molecular beam epitaxy". University of Western Australia. School of Electrical, Electronic and Computer Engineering, 2005. http://theses.library.uwa.edu.au/adt-WU2005.0106.
Pełny tekst źródłaShi, Min. "Growth of AlInN and zinc blende GaN by molecular beam epitaxy". Click to view the E-thesis via HKUTO, 2007. http://sunzi.lib.hku.hk/HKUTO/record/B39558873.
Pełny tekst źródłaBone, Paul Adam. "Growth of (Ga, In)(N, As) alloys by molecular beam epitaxy". Thesis, Imperial College London, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.429487.
Pełny tekst źródłaTok, Eng Soon. "Kinetic studies of GaAs growth and doping by molecular beam epitaxy". Thesis, Imperial College London, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.300412.
Pełny tekst źródła彭澤厚 i Chak-hau Pang. "A study of Mg doping in GaN during molecular beam epitaxy". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2001. http://hub.hku.hk/bib/B31226619.
Pełny tekst źródła張秀霞 i Sau-ha Cheung. "Growing of GaN on vicinal SiC surface by molecular beam epitaxy". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B31243009.
Pełny tekst źródłaShi, Min, i 施敏. "Growth of AlInN and zinc blende GaN by molecular beam epitaxy". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2007. http://hub.hku.hk/bib/B39558873.
Pełny tekst źródłaClarke, S. "Growth and recovery kinetics during molecular beam epitaxy : a simulation study". Thesis, Imperial College London, 1988. http://hdl.handle.net/10044/1/47001.
Pełny tekst źródłaKnoll, Stephan Manuel. "Characterisation of ScN and ScGaN alloys grown by molecular beam epitaxy". Thesis, University of Cambridge, 2015. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708504.
Pełny tekst źródłaZhang, Yun. "High Quality ZnO Epitaxial Grown By Plasma Assisted Molecular Beam Epitaxy". VCU Scholars Compass, 2004. http://scholarscompass.vcu.edu/etd/883.
Pełny tekst źródłaCarrington, Peter James. "Quantum nanostructures grown by molecular beam epitaxy for mid-infrared applications". Thesis, Lancaster University, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.533092.
Pełny tekst źródłaOzasa, Kazunari. "METALORGANIC MOLECULAR BEAM EPITAXY OF PHOSPHORUS-BASED III-V TERNARY SEMICONDUCTORS". Kyoto University, 1989. http://hdl.handle.net/2433/162234.
Pełny tekst źródłaLiu, Jian. "Molecular beam epitaxy growth of Si/Ge heterostructure for electron transport". Diss., Restricted to subscribing institutions, 2007. http://proquest.umi.com/pqdweb?did=1432804071&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.
Pełny tekst źródłaSmith, John Stephen Yariv Amnon. "III-V molecular beam epitaxy structures for electronic and optoelectronic applications /". Diss., Pasadena, Calif. : California Institute of Technology, 1986. http://resolver.caltech.edu/CaltechETD:etd-03082008-083912.
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