Gotowa bibliografia na temat „Modèle bipolaire”
Utwórz poprawne odniesienie w stylach APA, MLA, Chicago, Harvard i wielu innych
Spis treści
Zobacz listy aktualnych artykułów, książek, rozpraw, streszczeń i innych źródeł naukowych na temat „Modèle bipolaire”.
Przycisk „Dodaj do bibliografii” jest dostępny obok każdej pracy w bibliografii. Użyj go – a my automatycznie utworzymy odniesienie bibliograficzne do wybranej pracy w stylu cytowania, którego potrzebujesz: APA, MLA, Harvard, Chicago, Vancouver itp.
Możesz również pobrać pełny tekst publikacji naukowej w formacie „.pdf” i przeczytać adnotację do pracy online, jeśli odpowiednie parametry są dostępne w metadanych.
Artykuły w czasopismach na temat "Modèle bipolaire"
Guelfi, JD. "Nosographie des états dépressifs: tendances actuelles". Psychiatry and Psychobiology 5, nr 3 (1990): 161–67. http://dx.doi.org/10.1017/s0767399x0000345x.
Pełny tekst źródłaKhazaal, Yasser, Martin Preisig i Daniele Fabio Zullino. "Psychoéducation et traitements cognitifs et comportementaux du trouble bipolaire". Santé mentale au Québec 31, nr 1 (31.10.2006): 125–43. http://dx.doi.org/10.7202/013689ar.
Pełny tekst źródłaHelmes, Edward, Richard D. Goffin i Roland D. Chrisjohn. "Confirmatory Analysis of the Bradburn Affect Balance Scale and its Relationship with Morale in Older Canadian Adults". Canadian Journal on Aging / La Revue canadienne du vieillissement 29, nr 2 (26.04.2010): 259–66. http://dx.doi.org/10.1017/s0714980810000176.
Pełny tekst źródłaDahdouh, A., F. Bena, J. Prados, M. Taleb i A. Malafosse. "Recherche de mutation rare du trouble bipolaire de type I : étude familiale en Algérie". European Psychiatry 29, S3 (listopad 2014): 541. http://dx.doi.org/10.1016/j.eurpsy.2014.09.320.
Pełny tekst źródłaChotard, Jean-René. "Asie du Sud: la nouvelle géopolitique américaine après la guerre froide (Note)". Études internationales 29, nr 1 (12.04.2005): 5–23. http://dx.doi.org/10.7202/703840ar.
Pełny tekst źródłaDitchéva-Nikolova, Malina, i Jean-Yves Dommergues. "Un modèle bipolaire du groupe nominal complexe. La place de l’adjectif épithète en français et en bulgare". L Information Grammaticale 99, nr 1 (2003): 3–7. http://dx.doi.org/10.3406/igram.2003.2594.
Pełny tekst źródłaDi Nicola, M., L. Sala, L. Romo, V. Catalano, C. Dubertret, G. Martinotti, M. Mazza i in. "Trouble déficit d’attention avec ou sans hyperactivité chez des adultes souffrant d’un trouble de l’humeur : le rôle des dimensions de la personnalité". European Psychiatry 28, S2 (listopad 2013): 47. http://dx.doi.org/10.1016/j.eurpsy.2013.09.122.
Pełny tekst źródłaHuynh, C., J. M. Guilé, J. J. Breton, L. Desrosiers i D. Cohen. "Le modèle du tempérament et du caractère de Cloninger appliqué dans le trouble bipolaire de l’adulte : recension de la littérature d’une approche tempéramentale". Annales Médico-psychologiques, revue psychiatrique 168, nr 5 (czerwiec 2010): 325–32. http://dx.doi.org/10.1016/j.amp.2010.03.015.
Pełny tekst źródłaSantander, Sébastian. "La légitimation de l'Union européenne par l'exportation de son modèle d'intégration et de gouvernance régionale. Le cas du Marché commun du sud (Note)". Études internationales 32, nr 1 (12.04.2005): 51–67. http://dx.doi.org/10.7202/704256ar.
Pełny tekst źródłaHuguelet, P. "Sens de la vie et troubles psychotiques". European Psychiatry 30, S2 (listopad 2015): S27. http://dx.doi.org/10.1016/j.eurpsy.2015.09.082.
Pełny tekst źródłaRozprawy doktorskie na temat "Modèle bipolaire"
Berger, Dominique. "Etude et validation d'un modèle de transistor bipolaire dédié aux applications hautes fréquences". Bordeaux 1, 2004. http://www.theses.fr/2004BOR12827.
Pełny tekst źródłaBenchaib, Khadidja. "Modèle facile d'emploi de transistor bipolaire pour la CAO en électronique de puissance". Toulouse, INPT, 1991. http://www.theses.fr/1991INPT007H.
Pełny tekst źródłaLabalestra, Mélanie. "Les troubles formels de la pensée et de la mémoire sémantique : modèle de vulnérabilité au trouble bipolaire". Thesis, Reims, 2018. http://www.theses.fr/2018REIML012/document.
Pełny tekst źródłaDisorganization of speech is commonly observed in the manic phase of bipolar disorder as incomprehensible language, disjointed or illogical ideas. Recent studies had explored the cognitive processes that underlie these disturbances of language and formal thought disorders in bipolar trouble. These studies appear to be in favor of semantic abnormalities. To determine the nature of these disturbances, we carried out studies which focus on two specific processes: the automatic spreading activation and the semantic inhibition. To assess these processes, two lexical decision tasks based on semantic priming were built. These tasks are proposed to 17 euthymic bipolar patients as well as to a group of 61 people from the general population for whom hypomanic personality traits and affective temperaments are evaluated. The results show lower efficacy for both processes in bipolar disorder. These disturbances are associated with the disturbances of formal thought disorders. In the general population, the results show that only the dysfunction of the automatic spreading activation is associated with hyperthymic and irritable temperaments. This association is not found for semantic inhibition, suggesting the intervention of compensatory cognitive strategies when the processes are controlled. Our results, combined with those of the literature, seem to be in favor of a dimensional approach to bipolar disorder and underline the interest of investigating cognition in the attenuated forms of the disorder
Kahn, Mathias. "Transistor bipolaire à hétérojonction GaInAs/InP pour circuits ultra-rapides : structure, fabrication et catactérisation". Paris 11, 2004. https://tel.archives-ouvertes.fr/tel-00006792.
Pełny tekst źródłaThe developpement of optical networks in the last decade has made possible the strong increase in worlwide telecomunications. Processing of high-bitrates signals (above 40 gb/s) at fiber input and output requires numerical circuits working very high frequencies, and thus based on vary fast electronics devices with cutoff frequencies of 150 ghz or more. Iii-v semiconctor materials have remarkable physical properties, making inp base hbt one of the fastest transitor available at this time. This device allows design of circuits working at the very high frequencies required in optical communications applications. Fabrication of gainas/inp hbt involves a large number of design and processing steps (epitaxial growth, cleanroom processing, caracterisation,), and requiers understanding of various physical effects determining the device behavior. In this work, we study the main physical effects involved in hbt behavior, and we carry out optimisation of the device
Gillet, Pierre. "Modèle "distribué" de transistor bipolaire pour la C. A. O. Des circuits en électronique de puissance". Toulouse, INPT, 1995. http://www.theses.fr/1995INPT003H.
Pełny tekst źródłaMedjnoun, Madjid. "Modélisation du transistor bipolaire à heterojonction pour le régime transitoire grand signal". Paris 6, 2000. http://www.theses.fr/2000PA066532.
Pełny tekst źródłaNodjiadjim, Virginie. "Transistor bipolaire à double hétérojonction submicronique InP/InGaAs pour circuits numériques ou mixtes ultra-rapides". Thesis, Lille 1, 2009. http://www.theses.fr/2009LIL10028/document.
Pełny tekst źródłaThis thesis is about the performance optimization of InP/InGaAs Double Heterojunction Bipolar Transistors (DHBT) with sub-micrometer dimensions. The development of an analytical model taking into account the specific features of the device in terms of geometry and process is first reported. This model, backed by results from S parameters measurements, is used to define a device geometry leading to high cut-off frequencies; it also helps identifying the main directions for further performance improvement. Several epi-layer structures for the base-collector junction are then investigated, aiming at improving the HBT transport properties and at pushing toward higher current densities the onset of Kirk effect. Since HBTs are operating at current densities as high as 800 kA/cm2 and beyond, they are sensitive to self-heating; this feature results in reduced frequency performance and faster characteristics degradation. This is why the impact of temperature on transistor performance is analyzed and ways to limit HBTs self-heating phenomena and to improve their reliability are indicated. This work allowed the validation of an HBT process characterized by cut-off frequencies in the 250-300 GHz range for both fT and fmax, together with a breakdown voltage of about 5 V. Such HBTs have been used in the fabrication of ICs for 100 Gbit/s transmission applications
Amimi, Adel. "Modèle électro-thermique unidimensionnel du transistor bipolaire à grille isolée (IGBT) pour la simulation de circuits de puissance". Rouen, 1997. http://www.theses.fr/1997ROUES033.
Pełny tekst źródłaPérez, Marie Anne. "Modèle électrothermique distribué de transistor bipolaire à hétérojonction : application à la conception non linéaire d'amplificateurs de puissance optimisés en température". Limoges, 1998. http://www.theses.fr/1998LIMO0029.
Pełny tekst źródłaLopez, David. "Intégration dans un environnement de simulation circuit d'un modèle électrothermique de transistor bipolaire à hétérojonction issu de simulations thermiques tridimensionnelles". Limoges, 2002. http://www.theses.fr/2002LIMO0007.
Pełny tekst źródłaThe work presented here involves an integration into a circuit simulator of a HBT's thermal model from a 3D finite element method thermal simulation
Książki na temat "Modèle bipolaire"
Çilingiroğlu, Uğur. Systematic analysis of bipolar and MOS transistors. Boston: Artech House, 1993.
Znajdź pełny tekst źródłaSchröter, Michael. Compact hierarchical bipolar transistor modeling with hicum. Singapore: World Scientific, 2010.
Znajdź pełny tekst źródłaKuttner, Kenneth N. Beyond bipolar: A three-dimensional assessment of monetary frameworks. Wien: Oesterreichische Nationalbank, 2001.
Znajdź pełny tekst źródłaKuttner, Kenneth N. Beyond bipolar: A three-dimensional assessment of monetary frameworks. Wien: Oesterreichische Nationalbank, 2001.
Znajdź pełny tekst źródła1958-, Young L. Trevor, i Joffe Russell T. 1954-, red. Bipolar disorder: Biological models and their clinical application. New York: M. Dekker, 1997.
Znajdź pełny tekst źródłaInc, AeroVironment, i United States. National Aeronautics and Space Administration., red. Development of a woven-grid quasi-bipolar battery: Phase I final report. [Washington, DC: National Aeronautics and Space Administration, 1998.
Znajdź pełny tekst źródłaD, Cressler John, red. Measurement and modeling of silicon heterostructure devices. Boca Raton, FL: CRC Press, 2008.
Znajdź pełny tekst źródłaP, Soubrié, red. Anxiety, depression, and mania. Basel: Karger, 1991.
Znajdź pełny tekst źródłaStrakowski, Stephen, red. The Bipolar Brain. Wyd. 2. Oxford University Press, 2022. http://dx.doi.org/10.1093/med/9780197574522.001.0001.
Pełny tekst źródłaParker, Gordon, i Amelia Paterson. Should the bipolar disorders be modelled dimensionally or categorically? Oxford University Press, 2017. http://dx.doi.org/10.1093/med/9780198748625.003.0002.
Pełny tekst źródłaCzęści książek na temat "Modèle bipolaire"
Akram, Muhammad, i Fariha Zafar. "Bipolar Fuzzy Soft Graphs". W Hybrid Soft Computing Models Applied to Graph Theory, 353–70. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-16020-3_7.
Pełny tekst źródłaCabrit, Sylvie, Alex Raga i Frederic Gueth. "Models of Bipolar Molecular Outflows". W Herbig-Haro Flows and the Birth of Low Mass Stars, 163–80. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5608-0_15.
Pełny tekst źródłaMidttun, Atle. "Polycentric Governance in a Bipolar World". W Governance and Business Models for Sustainable Capitalism, 189–95. New York: Routledge, 2021. http://dx.doi.org/10.4324/9781315454931-12.
Pełny tekst źródłade Graaff, Henk C., i François M. Klaassen. "Compact Models for Vertical Bipolar Transistors". W Computational Microelectronics, 99–131. Vienna: Springer Vienna, 1990. http://dx.doi.org/10.1007/978-3-7091-9043-2_4.
Pełny tekst źródłaDe Tré, Guy, Dirk Vandermeulen, Jeroen Hermans, Peter Claeys, Joachim Nielandt i Antoon Bronselaer. "Bipolar Comparison of 3D Ear Models". W Information Processing and Management of Uncertainty in Knowledge-Based Systems, 160–69. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-08852-5_17.
Pełny tekst źródłaDykas, Paweł, Tomasz Tokarski i Rafał Wisła. "Bipolar growth models with investment flows". W The Solow Model of Economic Growth, 126–66. London: Routledge, 2022. http://dx.doi.org/10.4324/9781003323792-7.
Pełny tekst źródłaHoffmann, Berno. "Modelle bipolarer Geschlechtersozialisation: Vom Verschwinden des Menschen". W Das sozialisierte Geschlecht, 17–54. Wiesbaden: VS Verlag für Sozialwissenschaften, 1997. http://dx.doi.org/10.1007/978-3-322-97355-9_2.
Pełny tekst źródłaGruenwald, R., S. M. Viegas i D. Broguière. "3D Photoionization Models: the Bipolar PNIC 4406". W Planetary Nebulae, 231. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5244-0_88.
Pełny tekst źródłaWambacq, Piet, i Willy Sansen. "Silicon bipolar transistor models for distortion analysis". W The Kluwer International Series in Engineering and Computer Science, 180–99. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4757-5003-4_6.
Pełny tekst źródłaChen, Guang, Ioline D. Henter i Husseini K. Manji. "Partial Rodent Genetic Models for Bipolar Disorder". W Behavioral Neurobiology of Bipolar Disorder and its Treatment, 89–106. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/7854_2010_63.
Pełny tekst źródłaStreszczenia konferencji na temat "Modèle bipolaire"
Yoon, Jangsup, Robert Fox i William Eisenstadt. "Integrated BiCMOS 10 GHz S-Parameter Module". W 2006 Bipolar/BiCMOS Circuits and Technology Meeting. IEEE, 2006. http://dx.doi.org/10.1109/bipol.2006.311127.
Pełny tekst źródłaGoodman, M. Trent, S. R. McNeill, J. W. Van Zee, S. Shimpalee i J. A. Khan. "Effect of Bipolar Plate Cooling on Fuel Cell Heat Generation". W ASME 2004 Heat Transfer/Fluids Engineering Summer Conference. ASMEDC, 2004. http://dx.doi.org/10.1115/ht-fed2004-56707.
Pełny tekst źródłaChek, YF, i TC Liew. "Building a bipolar floating power supply module". W 2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT). IEEE, 2012. http://dx.doi.org/10.1109/iemt.2012.6521754.
Pełny tekst źródłaBardalen, Eivind, Jaani Nissila, Thomas Fordell, Bjornar Karlsen, Oliver Kieler i Per Ohlckers. "Bipolar photodiode module operated at 4 K". W 2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC). IEEE, 2020. http://dx.doi.org/10.1109/estc48849.2020.9229695.
Pełny tekst źródła"Bayesian Prognostic Model for Genomic Discovery in Bipolar Disorder". W International Conference on Bioinformatics Models, Methods and Algorithms. SCITEPRESS - Science and and Technology Publications, 2014. http://dx.doi.org/10.5220/0004642100910098.
Pełny tekst źródłaThape, Neendha Cheah Soo, i Nazihah Ahmad. "Solving bipolar fully fuzzy sylvester matrix equations". W INTERNATIONAL UZBEKISTAN-MALAYSIA CONFERENCE ON “COMPUTATIONAL MODELS AND TECHNOLOGIES (CMT2020)”: CMT2020. AIP Publishing, 2021. http://dx.doi.org/10.1063/5.0057002.
Pełny tekst źródłaLjumarov, P. P. "Adjustment of bipolar transistors models parameters". W 2008 9th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering (APEIE). IEEE, 2008. http://dx.doi.org/10.1109/apeie.2008.4897090.
Pełny tekst źródłaLiedtke, Magnus, Golta Khatibi, Bernhard Czerny i Johann Nicolics. "Thermomechanical Reliability Investigation of Insulated Gate Bipolar Transistor Module". W 2018 41st International Spring Seminar on Electronics Technology (ISSE). IEEE, 2018. http://dx.doi.org/10.1109/isse.2018.8443619.
Pełny tekst źródłaJohn, Jay, Jim Kirchgessner, Matt Menner, Hernan Rueda, Francis Chai, Dave Morgan, Jill Hildreth, Morgan Dawdy, Ralf Reuter i Hao Li. "Development of a Cost-Effective, Selective-Epi, SiGe:C HBT Module for 77GHz Automotive Radar". W 2006 Bipolar/BiCMOS Circuits and Technology Meeting. IEEE, 2006. http://dx.doi.org/10.1109/bipol.2006.311149.
Pełny tekst źródłade Graauw, A. J. M., A. van Bezooijen, C. Chanlo, A. den Dekker, J. Dijkhuis, S. Pramm i H. K. J. ten Dolle. "Miniaturized Quad-Band Front-End Module for GSM using Si BiCMOS and passive integration technologies". W 2006 Bipolar/BiCMOS Circuits and Technology Meeting. IEEE, 2006. http://dx.doi.org/10.1109/bipol.2006.311136.
Pełny tekst źródłaRaporty organizacyjne na temat "Modèle bipolaire"
Wampler, William R., i Samuel Maxwell Myers. Carrier tunneling in models of irradiated heterojunction bipolar transistors. Office of Scientific and Technical Information (OSTI), sierpień 2014. http://dx.doi.org/10.2172/1171564.
Pełny tekst źródłaOvrebo, Gregory K. Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module. Fort Belvoir, VA: Defense Technical Information Center, luty 2015. http://dx.doi.org/10.21236/ada616757.
Pełny tekst źródłaCampbell, Phillip, i Steven Wix. Total dose and dose rate models for bipolar transistors in circuit simulation. Office of Scientific and Technical Information (OSTI), maj 2013. http://dx.doi.org/10.2172/1088097.
Pełny tekst źródłaZimmerman, T. An approximate HSPICE model for orbit low noise analog bipolar NPN transistors. Office of Scientific and Technical Information (OSTI), lipiec 1991. http://dx.doi.org/10.2172/5475545.
Pełny tekst źródłaOvrebo, Gregory K. Simulation of Heating of an Oil-Cooled Insulated Gate Bipolar Transistors Converter Model. Fort Belvoir, VA: Defense Technical Information Center, październik 2004. http://dx.doi.org/10.21236/ada428067.
Pełny tekst źródłaWilk, Kacper, Ewelina Kowalewska, Maria Załuska i Michał Lew-Starowicz. The comparison of variuos models of community psychiatry – a systematic review. INPLASY - International Platform of Registered Systematic Review and Meta-analysis Protocols, maj 2023. http://dx.doi.org/10.37766/inplasy2023.5.0094.
Pełny tekst źródłaLiou, Chorng-Lii. An improved formulation of the temperature dependence of the Gummel-Poon bipolar transistor model equations. Portland State University Library, styczeń 2000. http://dx.doi.org/10.15760/etd.6217.
Pełny tekst źródła