Artykuły w czasopismach: „Millimeter-Wave Circuit Design”

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Shigematsu, H., T. Hirose, F. Brewer i M. Rodwell. "Millimeter-wave CMOS circuit design". IEEE Transactions on Microwave Theory and Techniques 53, nr 2 (luty 2005): 472–77. http://dx.doi.org/10.1109/tmtt.2004.840758.

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Tatu, Serioja Ovidiu, i Emilia Moldovan. "Millimeter Wave Multi-Port Interferometric Radar Sensors: Evolution of Fabrication and Characterization Technologies". Sensors 20, nr 19 (24.09.2020): 5477. http://dx.doi.org/10.3390/s20195477.

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Recent advances in millimeter wave technologies, both in component and system design, in line with important size and cost reductions, have opened up new applications in ultra-high-speed wireless communications, radar and imaging sensors. The paper presents the evolution of millimeter wave circuit and modules fabrication and characterization technologies in the past decades. Novel planar low-cost fabrication technologies have been successfully developed in this period. In combination with the standard rectangular wave-guide technology, these offer great opportunities for prototyping and testing of future millimeter wave transceivers or front-ends, which integrate antenna arrays, down-converters, modulators, amplifiers, etc., in a compact fixture. The paper uses, as a suggestive example, the evolution of the multi-port interferometric front-ends implementation from millimeter wave bulky components and systems to miniaturized and high-efficient ones. Circuit and system designs are carefully done to avoid (as much as possible) complicated calibration methods or difficult post-processing of baseband data. This requires an increased effort in design and fabrication, but it allows miniaturization, low-power consumption, while keeping very good overall performances. Useful and straightforward laboratory characterization techniques of circuits and systems are described in detail.

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Ragonese, Egidio. "Design Techniques for Low-Voltage RF/mm-Wave Circuits in Nanometer CMOS Technologies". Applied Sciences 12, nr 4 (17.02.2022): 2103. http://dx.doi.org/10.3390/app12042103.

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This paper reviews state-of-the-art design approaches for low-voltage radio frequency (RF) and millimeter-wave (mm-wave) CMOS circuits. Effective design techniques at RF/mm-wave frequencies are described, including body biasing in fully depleted (FD) silicon-on-insulator (SOI) CMOS technologies and circuit topologies based on integrated reactive components (i.e., capacitors, inductors and transformers). The application of low-voltage design techniques is discussed for the main RF/mm-wave circuit blocks, i.e., low-noise amplifiers (LNAs), mixers and power amplifiers (PAs), highlighting the main design tradeoffs.

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Habibpour, Omid, Wlodzimierz Strupinski, Niklas Rorsman, Pawel Ciepielewski i Herbert Zirath. "Generic Graphene Based Components and Circuits for Millimeter Wave High Data-rate Communication Systems". MRS Advances 2, nr 58-59 (2017): 3559–64. http://dx.doi.org/10.1557/adv.2017.433.

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ABSTRACT We are developing millimeter wave (mm-wave) components and circuits based on hydrogen-intercalated graphene. The development covers epitaxial graphene growth, device fabrication, modelling, integrated circuit design and fabrication, and circuit characterizations. The focus of our work is to utilize the distinctive graphene properties and realize new components that can overcome some of the main challenges of existing mm-wave technologies in term of linearity.

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Moldovan, Emilia, Nazih Khaddaj Mallat i Serioja Ovidiu Tatu. "MHMIC Six-port Interferometer for W-band Transceivers: Design and Characterization". International Journal of Electrical and Computer Engineering (IJECE) 9, nr 4 (1.08.2019): 2703. http://dx.doi.org/10.11591/ijece.v9i4.pp2703-2714.

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The study has presented an extensive analysis of an integrated millimeter wave six-port interferometer, operating over a 10 GHz band, from 80 to 90 GHz. It has covered both semi-unlicensed point-to-point links (81-86 GHz), and imaging sensor system frequencies (above 85 GHz). An in-house process is used to fabricate miniaturized hybrid millimeter wave integrated circuits on a very thin ceramic substrate. Two-port S-parameter measurements are performed on a minimum number of circuits integrated on the same die, exploiting the circuit’s physical symmetry and chosen to collect enough data for full-port characterization. Based on these measurements on an integrated prototype, a six-port circuit computer model implemented and advanced system simulations performed for circuit analysis. Interferometer performances evaluated using several methods: analysis of harmonic balance, qi points’, homodyne quadrature demodulation, and error vector modulation (EVM). The analysis showed that this circuit can directly perform, without any calibration, the demodulation of various PSK and QAM signals over the 10 GHz band, with very good results.

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Plouchart, J. O., Benjamin Parker, Bodhisatwa Sadhu, Alberto Valdes-Garcia, Daniel Friedman, Mihai Sanduleanu, Fa Wang, Xin Li i Andreea Balteanu. "Adaptive Circuit Design Methodology and Test Applied to Millimeter-Wave Circuits". IEEE Design & Test 31, nr 6 (grudzień 2014): 8–18. http://dx.doi.org/10.1109/mdat.2014.2343192.

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Labadie, Iris. "Advanced Ceramic Structures and Materials for High-Reliability Millimeter-Wave Applications". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, CICMT (1.09.2011): 000182–85. http://dx.doi.org/10.4071/cicmt-2011-wa22.

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Semiconductor device speeds and circuit operating frequencies have increased substantially over the past decade. Although millimeter-wave technology has been around for over 100 years, it is only within the past 5–10 years that increased demand for millimeter-wave commercial products and services has driven the development of new electronic package designs, low-loss materials, and the transformation of passive components to integrated and smaller geometries. High-reliability applications have employed millimeter-waves for several decades, but typically utilized heavy materials and distributed architectures. The transition of high-reliability millimeter-wave applications to new materials such as low-temperature co-fired ceramics requires innovative package designs to achieve comparable or better electrical performance in a much smaller form factor. Ceramic packaging technology continues to meet or exceed the performance requirements of high-reliability millimeter-wave applications with a broadened portfolio of material sets and innovative internal circuit components such as filter banks, antennas, and waveguides. Today's ceramic package design techniques and materials for applications within current and future high-reliability millimeter-wave markets will be discussed.

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Zhang, Bo, Yong-Zhong Xiong, Lei Wang, Sanming Hu i Joshua Le-Wei Li. "On the De-Embedding Issue of Millimeter-Wave and Sub-Millimeter-Wave Measurement and Circuit Design". IEEE Transactions on Components, Packaging and Manufacturing Technology 2, nr 8 (sierpień 2012): 1361–69. http://dx.doi.org/10.1109/tcpmt.2012.2200482.

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Thrasher, Bradley, Deepukumar Nair, James Parisi, Glenn Oliver i Michael A. Smith. "Bulk and In-Circuit Dielectric Characterization of LTCC Tape Systems Through Millimeter Wave Frequency Range". International Symposium on Microelectronics 2011, nr 1 (1.01.2011): 000740–46. http://dx.doi.org/10.4071/isom-2011-wp3-paper2.

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Low Temperature Co-fired Ceramic (LTCC) material systems offer a highly versatile microwave and millimeter wave packaging platform. Extremely low microwave loss, excellent control of dielectric constant, uniform dielectric thickness, non-existent water absorption leading to very high hermeticity, ability to support multilayer structure leading to 3-dimensional packaging, ability to embed passive functions within the tape layers, availability of a wide range of metallizations, etc. are some of the key advantages of LTCC for microwave packaging. One of the important parameters which needs to be determined at the very early stages of circuit designs are the dielectric properties - dielectric constant and loss tangent, both of which are functions of frequency. These properties need to be known accurately over the entire frequency range of operation for the circuit. For LTCC based designs, the use of dielectric constant of bulk material can lead to deviations between the performance expected at the design stage and for the fabricated circuit. Such deviations are a significant concern for broadband circuits as well as for circuits with sharp resonant behavior such as filters. One of the significant sources of deviation between bulk LTCC and “in-circuit” dielectric constant is the nature of the thick film metallizations used in LTCC technology. Work described here is a comprehensive characterization of three DuPont™ GreenTape™ LTCC systems 951, 943, and 9K7 - in the frequency range 10 to 70 GHz. Both bulk and “in-circuit” dielectric properties with silver and gold metallizations are studied to quantify the deviations in dielectric properties. A Fabry-Perot open resonator technique is used for the bulk characterization while printed ring resonators are used for the in-circuit characterization. This comprehensive characterization will provide key design data for LTCC designers in the 10 – 70 GHz frequency range.

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Kassa, Wosen-Eshetu, Anne-Laure Billabert, Salim Faci i Catherine Algani. "Simulation of heterodyne RoF systems based on 2 DFB lasers: application to an optical phase-locked loop design". International Journal of Microwave and Wireless Technologies 6, nr 2 (19.02.2014): 207–11. http://dx.doi.org/10.1017/s1759078714000117.

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This paper presents a simulation approach of optical heterodyne systems by using the equivalent circuit representation of a distributed feedback laser (DFB) in the electrical domain. Since the electrical representation of the DFB laser is developed from the rate equations, its characteristics such as non-linearity, relative intensity noise (RIN), and phase noise can be predicted precisely for various biasing conditions. The model is integrated in a heterodyne radio over fiber (RoF) system where two DFB lasers are used to generate a millimeter-wave (mm-wave) signal. An optical phase-locked loop is also introduced to reduce the phase noise on the mm-wave signal. The optical phase noise contribution of individual lasers to the mm-wave signal is evaluated and compared with theoretical results. It is shown that the phase noise of the mm-wave is reduced considerably depending on the loop bandwidth and propagation delay. With the circuit simulation approach proposed, optical and mm-wave phase noises can be studied together with other circuit environments such as parasitic effects and driver circuits.

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Dambrine, G., J. M. Belquin, F. Danneville i A. Cappy. "A new extrinsic equivalent circuit of HEMT's including noise for millimeter-wave circuit design". IEEE Transactions on Microwave Theory and Techniques 46, nr 9 (1998): 1231–36. http://dx.doi.org/10.1109/22.709461.

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Hannachi, C., D. Hammou, T. Djerafi, Z. Ouardirhi i S. O. Tatu. "Complete Characterization of Novel MHMICs for V-Band Communication Systems". Journal of Electrical and Computer Engineering 2013 (2013): 1–9. http://dx.doi.org/10.1155/2013/686708.

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This paper presents the characterization results of several new passive millimeter wave circuits integrated on very thin ceramic substrate. The work is focused on the design and characterization of a novel rounded Wilkinson power divider, a 90° hybrid coupler, a rat-race coupler, and a novel six-port (multiport) circuit. Measurements show the wideband characteristics, allowing therefore their use for multi-Gb/s V-band wireless communication systems.

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Li, Chong, Lai Bun Lok, Ata Khalid, Vasileios Papageorgiou, James Grant i David R. S. Cumming. "Millimeter-wave coplanar stripline power dividers". International Journal of Microwave and Wireless Technologies 5, nr 3 (1.05.2013): 205–12. http://dx.doi.org/10.1017/s1759078713000421.

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We present the design, fabrication, and measurement of a 2-way modified Wilkinson divider constructed in a coplanar geometry exhibiting ultra wideband isolation, transmission, and port matching in the millimeter-wave frequency range. The proposed divider replaces the lumped resistor in the conventional Wilkinson divider with two quarter-wave length transmission lines, a phase inverter, and two 2Z0 resistors. Except for the three ports that are coplanar waveguides (CPWs), the main body of the divider uses coplanar striplines (CPS). The phase inverter is realized using a simple airbridge-based crossover which is compatible with a modern monolithic microwave integrated circuit process. The divider has a ring-like configuration fabricated on a 620 µm thick semi-insulating GaAs wafer using electron beam lithography (EBL) technology. Three-dimensional (3D) full-wave electromagnetic simulations have been carried out to optimize the design and investigate the possible effect of fabrication tolerance on the performance of the crossover and the divider. Two dividers working at center frequencies of 25 and 80 GHz have been designed, fabricated, and tested. They all show consistent performance in terms of bandwidth, isolation, and port matching. Experimental and simulation results are in excellent agreement.

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Andric, Stefan, Lars Ohlsson Fhager i Lars-Erik Wernersson. "Millimeter-Wave Vertical III-V Nanowire MOSFET Device-to-Circuit Co-Design". IEEE Transactions on Nanotechnology 20 (2021): 434–40. http://dx.doi.org/10.1109/tnano.2021.3080621.

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Dittloff, J., i F. Arndt. "Rigorous field theory design of millimeter-wave E-plane integrated circuit multiplexers". IEEE Transactions on Microwave Theory and Techniques 37, nr 2 (1989): 340–50. http://dx.doi.org/10.1109/22.20060.

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Abdomerovic, Iskren, i Sanjay Raman. "A Millimeter Wave Loss-Aware Methodology for Switchless PALNA Integrated Circuit Design". IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 38, nr 12 (grudzień 2019): 2177–90. http://dx.doi.org/10.1109/tcad.2018.2878189.

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Bessemoulin, A., L. Verweyen, H. Massler i M. Schlechtweg. "Capacitive transmission lines in coplanar waveguide for millimeter-wave integrated circuit design". IEEE Microwave and Guided Wave Letters 9, nr 11 (1999): 450–52. http://dx.doi.org/10.1109/75.808031.

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Snowden, C. M. "Microwave and millimeter-wave device and circuit design based on physical modeling". International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering 1, nr 1 (1991): 4–21. http://dx.doi.org/10.1002/mmce.4570010103.

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He, Wangdong, Anyong Hu, Xi Chen, Jianhao Gong i Jungang Miao. "A Compact Broadband Analog Complex Correlator with High Correlation Efficiency for Passive Millimeter-Wave Imaging System". Electronics 11, nr 14 (11.07.2022): 2165. http://dx.doi.org/10.3390/electronics11142165.

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In this paper, the design, fabrication, and measurement of a compact broadband (4–8 GHz) analog complex correlator for a passive millimeter-wave imaging system are presented. To achieve high sensitivity and high integration of the imaging system, the wideband and miniaturization of the correlator are required. The correlator achieves wide bandwidth by using the add-and-square method, which is composed of a six-port circuit and a detection circuit. In order to realize the miniaturization of the correlator, the six-port circuit is realized on the chip base on the 0.15-μm gallium arsenide (GaAs) process. The influence of mismatch of the detection circuit that employs zero-bias Schottky diodes on the correlator is also analyzed to guide the design of the correlator. The measurement results of the designed chips and detector are consistent with the simulation result. Finally, a Sweep-frequency test is applied to the designed correlator, and the measurement results show that, within the frequency range of 4–8 GHz, the correlation amplitude fluctuation is less than 1.9 dB and the correlation efficiency is larger than 99%, which reveal that the correlator is suited for interferometric passive millimeter-wave imaging applications.

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Nguyen, Cam, i Kai Chang. "On the design and performance of printed-circuit filters and diplexers for millimeter-wave integrated circuits". International Journal of Infrared and Millimeter Waves 7, nr 7 (lipiec 1986): 971–98. http://dx.doi.org/10.1007/bf01026687.

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Hussain, Rifaqat, Mohamed Abou-Khousa, Naveed Iqbal, Abdullah Algarni, Saad I. Alhuwaimel, Azzedine Zerguine i Mohammad S. Sharawi. "A Multiband Shared Aperture MIMO Antenna for Millimeter-Wave and Sub-6GHz 5G Applications". Sensors 22, nr 5 (25.02.2022): 1808. http://dx.doi.org/10.3390/s22051808.

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A shared aperture 2-element multiple-input-multiple-output (MIMO) antenna design for 5G standards is presented in this study, one which uses the same radiating structure to cover both the sub-6GHz and millimeter-wave (millimeter-wave) bands. The proposed antenna comprises four concentric pentagonal slots that are uniformly separated from one another. For the sub-6GHz band, the antenna is excited by a single open-end microstrip transmission-line, while a 1 × 8 power divider (PD) connected via a T-junction structure excites the millimeter-wave band. Both the sub-6GHz and mm-wave antennas operate in a MIMO configuration. The proposed antenna design was fabricated on a 120 × 60 mm2 substrate with an edge-to-edge distance of 49 mm. The proposed sub-6GHz antenna covers the following frequency bands: 4–4.5 GHz, 3.1–3.8 GHz, 2.48–2.9 GHz, 1.82–2.14 GHz, and 1.4–1.58 GHz, while the millimeter-wave antenna operates at 28 GHz with at least 500 MHz of bandwidth. A complete antenna analysis is provided via a step-by-step design procedure, an equivalent circuit diagram showing the operation of the shared aperture antenna, and current density analysis at both millimeter-wave and sub-6GHz bands. The proposed antenna design is also characterized in terms of MIMO performance metrics with a good MIMO operation with maximum envelop correlation coefficient value of 0.113. The maximum measured gain and efficiency values obtained were 91% and 8.5 dBi over the entire band of operation. The antenna is backward compatible with 4G bands and also encompasses the sub-6GHz and 28 GHz bands for future 5G wireless communcation systems.

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James F. Buckwalter, Mark J. W. Rodwell, Kang Ning, Ahmed Ahmed, Andrea Arias-Purdue, Jeff Chien, Everett O'Malley i Eythan Lam. "Fundamental limits of high-efficiency silicon and compound semiconductor power amplifiers in 100-300 GHz bands". ITU Journal on Future and Evolving Technologies 2, nr 7 (7.10.2021): 39–50. http://dx.doi.org/10.52953/woxt4388.

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This paper reviews the requirements for future digital arrays in terms of power amplifier requirements for output power and efficiency and the device technologies that will realize future energy-efficient communication and sensing electronics for the upper millimeter-wave bands (100-300 GHz). Fundamental device technologies are reviewed to compare the needs for compound semiconductors and silicon processes. Power amplifier circuit design above 100 GHz is reviewed based on load line and matching element losses. We present recently presented class-A and class-B PAs based on a InP HBT process that have demonstrated record efficiency and power around 140 GHz while discussing circuit techniques that can be applied in a variety of integrated circuits.

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Derycke, A. C., i G. Salmer. "Circuit Analysis and Design of Radial Pretuned Modules Used for Millimeter-Wave Oscillators". IEEE Transactions on Microwave Theory and Techniques 33, nr 7 (lipiec 1985): 600–609. http://dx.doi.org/10.1109/tmtt.1985.1133035.

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Lee, K. M., J. H. Oh, M. S. Kim, T. S. Kim i M. Kim. "RF Pogo-Pin Probe Card Design Aimed at Automated Millimeter-Wave Multi-Port Integrated-Circuit Testing". Electronics 10, nr 19 (8.10.2021): 2446. http://dx.doi.org/10.3390/electronics10192446.

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A prototype RF probe card is assembled to test the feasibility of Pogo-pins as robust probe tips for the automized testing of multiple-port millimeter-wave circuits. A custom-made ceramic housing machined from a low-loss dielectric holds an array of 157 Pogo-pins, each with 2.9 mm-length in fixed positions. The ceramic housing is then mounted onto a probe-card PCB for power-loss measurements on two signal-ground Pogo-pin connections arbitrarily selected from the array. The probing results on a test circuit with a simple thru-line indicate a successful power transfer with a small insertion loss of less than 0.5 dB per single Pogo-pin connection up to 25 GHz. A new probe card design using shorter Pogo-pins is being prepared to extend the operation frequency to beyond 40 GHz.

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Maeda, Hiroshi, Huili Chen, Kazuya Tomiura i Kiyotoshi Yasumoto. "Numerical and Experimental Study on Confinement in Y-Shaped Post Wall Branching Waveguide". Mobile Information Systems 10, nr 2 (2014): 217–28. http://dx.doi.org/10.1155/2014/514825.

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Post wall waveguides consist of dielectric or metallic cylinders for microwave around 4 GHz were experimentally and numerically investigated. The structure attracts interests for application of transmission circuit for three-dimensionally integrated planar circuit in millimeter wavelength. In straight waveguide with dielectric cylinders, confinement of microwave is poor, when the post wall was composed of a pair of single row of cylinders. The confinement was improved as increase of rows of post wall. In metallic cylinders, microwave was well confined even when a pair of single row of cylinders composed the waveguide. After confirming confinement of the electromagnetic field, Y-shaped branches of post wall waveguide consisted of dielectric cylinders for microwave were similarly investigated for dielectric rods. The confinement was also improved by increase of post wall up to 3 layers. These results are applicable for fundamental design and fabrication of integrated circuit for microwave and millimeter wave.

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Grubert, J., J. Heyen, C. Metz, L. C. Stange i A. F. Jacob. "Planar millimeter wave radar frontend for automotive applications". Advances in Radio Science 1 (5.05.2003): 125–29. http://dx.doi.org/10.5194/ars-1-125-2003.

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Abstract. A fully integrated planar sensor for 77 GHz automotive applications is presented. The frontend consists of a transceiver multichip module and an electronically steerable microstrip patch array. The antenna feed network is based on a modified Rotman-lens and connected to the array in a multilayer approach offering higher integration. Furthermore, the frontend comprises a phase lock loop to allow proper frequency-modulated continuous wave (FMCW) radar operation. The latest experimental results verify the functionality of this advanced frontend design featuring automatic cruise control, precrash sensing and cut-in detection. These promising radar measurements give reason to a detailed theoretical investigation of system performance. Employing commercially available MMIC various circuit topologies are compared based on signal-tonoise considerations. Different scenarios for both sequential and parallel lobing hint to more advanced sensor designs and better performance. These improvements strongly depend on the availability of suitable MMIC and reliable packaging technologies. Within our present approach possible future MMIC developments are already considered and, thus, can be easily adapted by the flexible frontend design. Es wird ein integrierter planarer Sensor für 77 GHz Radaranwendungen vorgestellt. Das Frontend besteht aus einem Sende- und Empfangs-Multi-Chip-Modul und einer elektronisch schwenkbaren Antenne. Das Speisenetzwerk der Antenne basiert auf einer modifizierten Rotman- Linse. Für eine kompakte Bauweise sind Antenne und Speisenetzwerk mehrlagig integriert. Weiterhin umfasst das Frontend eine Phasenregelschleife für eine präzise Steuerung des frequenzmodulierten Dauerstrichradars. Die aktuellen Messergebnisse bestätigen die Funktionalit¨at dieses neuartigen Frontend-Designs, das automatische Geschwindigkeitsregelung, Kollisionswarnung sowie Nahbereichsüberwachung ermöglicht. Die Qualität der Messergebnisse hat weiterführende theoretische Untersuchungen über die potenzielle Systemleistungsfähigkeit motiviert. Unter Berücksichtigung von kommerziell erhältlichenMMICs werden verschiedene Schaltungstopologien auf der Grundlage des Signal-Rausch-Verhältnisses verglichen. Sowohl für sequenzielle als auch für parallele Ansteuerung der Antennenkeulen wird eine deutliche Leistungssteigerung ermittelt. Diese Verbesserungen hängen maßgeblich von der Verfügbarkeit geeigneter MMICs und einer zuverlässigen Aufbau- und Verbindungstechnik ab. Das vorliegende Frontend-Konzept kann auf Grund seiner Flexibilität leicht an derlei zukünftige Entwicklungen angepasst werden.

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Kawai, Seitaro, Shinji Sato, Shotaro Maki, Korkut Kaan Tokgoz, Kenichi Okada i Akira Matsuzawa. "Accurate Transistor Modeling by Three-Parameter Pad Model for Millimeter-Wave CMOS Circuit Design". IEEE Transactions on Microwave Theory and Techniques 64, nr 6 (czerwiec 2016): 1736–44. http://dx.doi.org/10.1109/tmtt.2016.2549527.

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Yang, Ki Seok, Sung Tae Choi, Kiyohito Tokuda i Yong Hoon Kim. "Broadband planar integration and packaging for millimeter-wave circuit design at the V-band". Microwave and Optical Technology Letters 44, nr 4 (2005): 371–74. http://dx.doi.org/10.1002/mop.20638.

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Kim, Jihoon. "A New GaN HEMT Small-Signal Model Considering Source via Effects for 5G Millimeter-Wave Power Amplifier Design". Applied Sciences 11, nr 19 (30.09.2021): 9120. http://dx.doi.org/10.3390/app11199120.

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A new gallium nitride (GaN) high electron mobile transistor (HEMT) small-signal model is proposed considering source via effects. In general, GaN HEMTs adopt a source via structure to reduce device degradation due to self-heating. In this paper, the modified drain-source capacitance (Cds) circuit considering the source via structure is proposed. GaN HEMTs fabricated using a commercial 0.15 μm GaN HEMT process are measured with a 67 GHz vector network analyzer (VNA). The fabricated device is an individual source via (ISV) type. As a result, it is difficult to predict the measured S12 in the conventional small-signal model equivalent circuit. This causes errors in maximum stable gain/maximum available gain (MSG/MAG) and stability factor (K), which are important for circuit design. This paper proposes a small-signal equivalent circuit that adds the drain-source inductance to the drain-source capacitance considering the source via structure. The proposed equivalent circuit better reproduces the measured S12 without compromising the accuracy of other S-parameters up to 67 GHz and improves the accuracy of MSG/MAG and K. It is expected that the proposed model can be utilized in a large-signal model for 5G millimeter-wave GaN HEMT power amplifier design in the future.

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Agarwal, Nitin, Manish Gupta i Manish Kumar. "AN EXTENSIVE REVIEW ON: LOW NOISE AMPLIFIER FOR MILLIMETER AND RADIO FREQUENCY WAVES". Jurnal Teknologi 84, nr 1 (27.11.2021): 231–39. http://dx.doi.org/10.11113/jurnalteknologi.v84.16524.

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In today’s world, radio receiver system is a prevailing wireless technology in that the major part is Low Noise Amplifier (LNA) which widely used to improve weak signals in many applications with millimeter and radio frequency waves such as optical communication, multimode transceivers and measurement instrumentations. The real drawbacks of LNA is that it fails to maintain specific properties in critical conditions like as minimum power consumption, provide low noise figure, input matching and linearity. Additionally, promoted by various application demands, design methods and control methods must require to improve performance of LNA. The performance of LNA can be improved by adding extra components in basic circuit by proper arrangement for millimeter and radio frequency waves. The review paper provides information about design methodology, optimization techniques and control techniques. The different design of LNA is reviewed and analyzed such as 3-stage near-mm Wave LNA, 5-stage near-mm Wave LNA, common-gate amplifier, shunt-feedback amplifier, Resistor-terminated common-source amplifier, Traditional inductor-less amplifiers, cascode connection and double common source. This review paper also provides the information about design circuit diagram. The performance improvement of LNA can be achieved with the help of different techniques and our review based on optimization and control techniques with parameter tuning. Finally, the direction for the future study is presented based on review analysis of LNA.

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Li, Yuhang, Jin Meng, Dehai Zhang i Haotian Zhu. "The Development of Frequency Tripler Based on Six-Anode Schottky Varactors". Micromachines 12, nr 12 (30.11.2021): 1490. http://dx.doi.org/10.3390/mi12121490.

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The development of a millimeter-wave unbalanced frequency tripler based on the nonlinear characteristics of planar Schottky varactors is presented. The entire module is designed by hybrid integration. A frequency multiplier circuit model was established to reflect the influence of diode parameters and the impedance matching on the multiplier in different frequency bands. The effect of junction imbalance on the output power of the frequency multiplier was investigated and the multiplier was improved based on the basic design. The addition of a cut microstrip stub in the improved diode unit reduced the impact of a power imbalance on frequency multiplier performance. The characteristics of the multiplier circuit were analyzed by the full-wave electromagnetic simulation of the three-dimensional structure and the harmonic balance simulation of the circuit. Test results showed that the peak output power of the improved frequency tripler was 12.6 mW at 277 GHz with an input power of 200 mW, an effective 12% improvement over the basic design.

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Squartecchia, Michele, Tom K. Johansen, Jean-Yves Dupuy, Virginio Midili, Virginie Nodjiadjim, Muriel Riet i Agnieszka Konczykowska. "Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers". International Journal of Microwave and Wireless Technologies 10, nr 9 (7.08.2018): 999–1010. http://dx.doi.org/10.1017/s1759078718001137.

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AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.

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Sharma, Somia, Rajesh Kumar Singh, Ananjan Basu i Shiban K. Koul. "A Wideband Transition from Microstrip Line to Microstrip Spoof Surface Plasmon Polariton Line for Microwave/Millimeter-Wave Applications". International Journal of RF and Microwave Computer-Aided Engineering 2023 (7.02.2023): 1–8. http://dx.doi.org/10.1155/2023/6485834.

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In this article, a wideband transition from a microstrip transmission line to a microstrip spoof surface plasmon polariton (SSPP) transmission line is reported. The proposed transition is realized to achieve better performance starting from low frequencies up to 40 GHz. The proposed shape of the unit cell is taken in such a manner that the momentum, impedance, and polarization of the microstrip line can be matched with that of the SSPP transmission line. The wide operating band of the transition can be achieved by perturbing only the shape of the unit cell. Extra care is taken in choosing the shape of the unit cell so that the fabrication of the circuit becomes easier, especially at millimeter-wave frequencies. The proposed transition has a good transition-occupation ratio and transmission efficiency. The achieved transition-occupation ratio and transition efficiency for all three designed cases are excellent, and it is 34.18%, 44%, and 39% for p = 1 mm, 2 mm, and 3 mm, respectively. It is a potential candidate for realizing millimeter-wave antennas and devices due to its attractive properties, such as compact layout, low fabrication cost, ease of fabrication even at millimeter-wave frequencies, and good operational characteristics.

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Elsheakh, Dalia M., i Magdy F. Iskander. "Circularly Polarized Triband Printed Quasi-Yagi Antenna for Millimeter-Wave Applications". International Journal of Antennas and Propagation 2015 (2015): 1–9. http://dx.doi.org/10.1155/2015/329453.

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This paper describes the design and development of a triband with circularly polarized quasi-Yagi antenna for ka-band and short range wireless communications applications. The proposed antenna consists of an integrated balun-fed printed dipole, parasitic folded dipole and a short strip, and a modified ground plane. The antenna structure, together with the parasitic elements, is designed to achieve circular polarization and triband operating at resonant frequencies of 13.5 GHz, 30 GHz, and 60 GHz. Antenna design was first simulated using HFSS ver.14, and the obtained results were compared with experimental measurements on a prototype developed on a single printed circuit board. Achieved characteristics include −10 dB impedance bandwidth at the desired bands, circular polarization axial ratioAR<3 dB, front to back ratio of 6 dB, gain value of about 4 dBi, and average radiation efficiency of 60%. The paper includes comparison between simulation and experimental results.

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Dambrine, Gilles, Jean-Maxence Belquin, Francis Danneville i Alain Cappy. "On the validity of a new extrinsic equivalent circuit including noise of HEMTs required for millimeter wave circuit design". Annales Des Télécommunications 52, nr 3-4 (marzec 1997): 140–44. http://dx.doi.org/10.1007/bf02996038.

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Mozharovskiy, Andrey V., Oleg V. Soykin, Aleksey A. Artemenko, Roman O. Maslennikov i Irina B. Vendik. "Wideband Waveguide-to-Microstrip Transition for mm-Wave Applications". Journal of the Russian Universities. Radioelectronics 22, nr 5 (4.12.2019): 17–32. http://dx.doi.org/10.32603/1993-8985-2019-22-5-17-32.

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Introduction. Increased data rate in modern communication systems can be achieved by raising the operational frequency to millimeter wave range where wide transmission bands are available. In millimeter wave communication systems, the passive components of the antenna feeding system, which are based on hollow metal waveguides, and active elements of the radiofrequency circuit, which have an interface constructed on planar printed circuit boards (PCB) are interconnected using waveguide-to-microstrip transition.Aim. To design and investigate a high-performance wideband and low loss waveguide-to-microstrip transition dedicated to the 60 GHz frequency range applications that can provide effective transmission of signals between the active components of the radiofrequency circuit and the passive components of the antenna feeding systemMaterials and methods. Full-wave electromagnetic simulations in the CST Microwave Studio software were used to estimate the impact of the substrate material and metal foil on the characteristics of printed structures and to calculate the waveguide-to-microstrip transition characteristics. The results were confirmed via experimental investigation of fabricated wideband transition samples using a vector network analyzer Results. The probe-type transition consist of a PCB fixed between a standard WR-15 waveguide and a back-short with a simple structure and the same cross-section. The proposed transition also includes two through-holes on the PCB in the center of the transition area on either side of the probe. A significant part of the lossy PCB dielectric is removed from that area, thus providing wideband and low-loss performance of the transition without any additional matching elements. The design of the transition was adapted for implementation on the PCBs made of two popular dielectric materials RO4350B and RT/Duroid 5880. The results of full-wave simulation and experimental investigation of the designed waveguide to microstrip transition are presented. The transmission bandwidth for reflection coefficient S11 < –10 dB is in excess of 50…70 GHz. The measured insertion loss for a single transition is 0.4 and 0.7 dB relatively for transitions based on RO4350B and RT/Duroid 5880.Conclusion. The proposed method of insertion loss reduction in the waveguide-to-microstrip transition provides effective operation due to reduction of the dielectric substrate portion in the transition region for various high-frequency PCB materials. The designed waveguide-to -microstrip transition can be considered as an effective solution for interconnection between the waveguide and microstrip elements of the various millimeter-wave devices dedicated for the 60 GHz frequency range applications.

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Atrey, Praveen Kumar, Dhaval A. Pujara, Subroto Mukherjee, Umesh Nagora, Praveenlal Edappala, Praveena Kumari i Rachana Rajpal. "DESIGN AND DEVELOPMENT OF MILLIMETER WAVE INTERFEROMETER CIRCUIT FOR REAL-TIME MEASUREMENT OF PLASMA DENSITY". Progress In Electromagnetics Research M 68 (2018): 1–10. http://dx.doi.org/10.2528/pierm18011502.

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Kaan TOKGOZ, Korkut, Kimsrun LIM, Seitarou KAWAI, Nurul FAJRI, Kenichi OKADA i Akira MATSUZAWA. "Characterization of Crossing Transmission Line Using Two-Port Measurements for Millimeter-Wave CMOS Circuit Design". IEICE Transactions on Electronics E98.C, nr 1 (2015): 35–44. http://dx.doi.org/10.1587/transele.e98.c.35.

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Sen, P., W. H. Woods, S. Sarkar, R. J. Pratap, B. M. Dufrene, R. Mukhopadhyay, Chang-Ho Lee, E. F. Mina i J. Laskar. "Neural-network-based parasitic modeling and extraction verification for RF/millimeter-wave integrated circuit design". IEEE Transactions on Microwave Theory and Techniques 54, nr 6 (czerwiec 2006): 2604–14. http://dx.doi.org/10.1109/tmtt.2006.872926.

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Jain, N., i P. Onno. "Methods of using commercial electromagnetic simulators for microwave and millimeter-wave circuit design and optimization". IEEE Transactions on Microwave Theory and Techniques 45, nr 5 (maj 1997): 724–46. http://dx.doi.org/10.1109/22.575596.

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Guan, Jin, Min Gong, Bo Gao, Yuxi Lu i Yu Lu. "Design of K-band modified hairpin filter with harmonic suppression using GaAs MMIC process". Circuit World 45, nr 4 (4.11.2019): 287–91. http://dx.doi.org/10.1108/cw-01-2019-0006.

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Purpose The purpose of this paper is to present a K-band modified hairpin bandpass filter on a planar circuit with harmonic suppression and compact size. Design/methodology/approach The inter-connect transmission lines of conventional hairpin filter are replayed by T-shaped open stub to achieve transmission zero for second harmonic. This filter is simulated and optimized by using electromagnetic simulation software and tested on-chip. Findings This proposed filter shows the return loss of better than −10dB, the insertion loss of better than 2 dB in pass-band and suppression of more than 40 dB at second harmonic. Originality/value The proposed filter can be designed on monolithic microwave integrated circuit, PCB or LTCC and it is useable for microwave and microwave and millimeter-wave systems.

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Zhao, Dixian, i Pingyang He. "CORDIC-Based Multi-Gb/s Digital Outphasing Modulator for Highly Efficient Millimeter-Wave Transmitters". Wireless Communications and Mobile Computing 2018 (2018): 1–6. http://dx.doi.org/10.1155/2018/7216870.

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This paper describes a high-speed CORDIC-based digital outphasing modulator. Fixed-point Matlab model of the outphasing modulator is developed to evaluate the system performance and define the circuit design parameters. Design issues such as signal quantization error, delay mismatch, and phase overflowing are addressed to enable hardware implementation. The complete outphasing modulator is fully custom designed in 40 nm CMOS, which can be integrated in a millimeter-wave outphasing transmitter to enhance the system average efficiency. Tested with 10.56 Gb/s 64-QAM, this work achieves an EVM of 3.2% and fulfils the IEEE 802.11ad spectral mask requirements.

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Lie, D. Y. C., J. C. Mayeda, Y. Li i J. Lopez. "A Review of 5G Power Amplifier Design at cm-Wave and mm-Wave Frequencies". Wireless Communications and Mobile Computing 2018 (4.07.2018): 1–16. http://dx.doi.org/10.1155/2018/6793814.

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The 5G wireless revolution presents some dramatic challenges to the design of handsets and communication infrastructures, as 5G targets higher than 10 Gbps download speed using millimeter-wave (mm-Wave) spectrum with multiple-input multiple-output (MIMO) antennas, connecting densely deployed wireless devices for Internet-of-Everything (IoE), and very small latency time for ultrareliable machine type communication, etc. The broadband modulation bandwidth for 5G RF transmitters (i.e., maximum possibly even above 1 GHz) demands high-power efficiency and stringent linearity from its power amplifier (PA). Additionally, the phased-array MIMO antennas with numerous RF front-ends (RFFEs) will require unprecedented high integration level with low cost, making the design of 5G PA one of the most challenging tasks. As the centimeter-wave (cm-Wave) 5G systems will probably be deployed on the market earlier than their mm-Wave counterparts, we will review in this paper the latest development on 15 GHz and 28 GHz 5G cm-Wave PAs extensively, while also covering some key mm-Wave PAs in the literature. Our review will focus on the available options of device technologies, novel circuit and system architectures, and efficiency enhancement techniques at power back-off for 5G PA design.

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Medrar, Kossaila, Loic Marnat i Laurent Dussopt. "Planar discrete lens antenna integrated on dielectric substrate for millimeter-wave transceiver module". International Journal of Microwave and Wireless Technologies 10, nr 1 (18.12.2017): 25–38. http://dx.doi.org/10.1017/s1759078717001416.

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A novel topology of high-gain millimeter-wave antenna compatible with substrate integration is presented. The antenna is composed of a planar discrete lens laid on top of a core dielectric, while the planar focal source is assembled on the bottom side. The antenna can be fabricated as a single, robust and compact module using standard low-cost PCB technologies, and is compatible with IC integration such as a transceiver circuit for fully integrated millimeter-wave front-end modules. The proposed architecture is studied with two compact V-band antennas (32 mm × 32 mm × 13.2 mm). The main design rules are demonstrated for unit cells, focal source, and planar lens at V-band. Promising performances in terms of gain (17.6 and 20.4 dBi), aperture efficiency (14 and 26%), and fractional 3-dB gain bandwidth (17 and 18%) are obtained experimentally for the two considered compact antennas.

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Huang, Chaoyu, Zhihao Zhang, Xinjie Wang, Hailiang Liu i Gary Zhang. "An MMIC LNA for Millimeter-Wave Radar and 5G Applications with GaN-on-SiC Technology". Sensors 23, nr 14 (22.07.2023): 6611. http://dx.doi.org/10.3390/s23146611.

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This paper presents a monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) that is compatible with n257 (26.5–29.5 GHz) and n258 (24.25–27.5 GHz) frequency bands for fifth-generation mobile communications system (5G) and millimeter-wave radar. The total circuit size of the LNA is 2.5 × 1.5 mm2. To guarantee a trade-off between noise figure (NF) and small signal gain, the transmission lines are connected to the source of gallium nitride (GaN)-on-SiC high electron mobility transistors (HEMT) by analyzing the nonlinear small signal equivalent circuit. A series of stability enhancement measures including source degeneration, an RC series network, and RF choke are put forward to enhance the stability of designed LNA. The designed GaN-based MMIC LNA adopts hybrid-matching networks (MNs) with co-design strategy to realize low NF and broadband characteristics across 5G n257 and n258 frequency band. Due to the different priorities of these hybrid-MNs, distinguished design strategies are employed to benefit small signal gain, input-output return loss, and NF performance. In order to meet the testing conditions of MMIC, an impeccable system for measuring small has been built to ensure the accuracy of the measured results. According to the measured results for small signal, the three-stage MMIC LNA has a linear gain of 18.2–20.3 dB and an NF of 2.5–3.1 dB with an input–output return loss better than 10 dB in the whole n257 and n258 frequency bands.

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Han, Ke, Yuchu Yan, Ze Yan i Chongwei Wang. "Low-Profile Millimeter-Wave Metasurface-Based Antenna with Enhanced Bandwidth". Micromachines 14, nr 7 (10.07.2023): 1403. http://dx.doi.org/10.3390/mi14071403.

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A millimeter-wave broadband metasurface-based antenna with a low profile is proposed. In order to guide the mode excitation, the characteristic mode analysis (CMA) is used for the design and optimization of the proposed antenna. Four sets of coplanar patches with different dimensions on a thin printed circuit board are used to generate four adjacent broadside modes, which are directly fed by a coaxial probe. Then, to expand low-frequency bandwidth, a new resonant mode is introduced by etching slots on the parasite patch. Meanwhile, the extra mode introduced does not significantly change the radiation performance of the original modes. Moreover, dual slots are etched on the mid patch fed by the coaxial probe, which moves the orthogonal modes of the chosen modes out of the operating band to reduce cross-polarization levels. The proposed antenna realized 25.02 % (30–38.58 GHz) impedance bandwidth with dimensions of 1.423×1.423×0.029λ0 3 (λ0 is the wavelength at 34 GHz in free space), and the realized gain in the band is 8.35–11.3 dB.

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Feng, Shi-Yu, Yong-Bo Su, Peng Ding, Jing-Tao Zhou, Song-Ang Peng, Wu-Chang Ding i Zhi Jin. "Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation". Chinese Physics B 31, nr 4 (1.04.2022): 047303. http://dx.doi.org/10.1088/1674-1056/ac2b1d.

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With the widespread utilization of indium-phosphide-based high-electron-mobility transistors (InP HEMTs) in the millimeter-wave (mmW) band, the distributed and high-frequency parasitic coupling behavior of the device is particularly prominent. We present an InP HEMT extrinsic parasitic equivalent circuit, in which the conductance between the device electrodes and a new gate–drain mutual inductance term L mgd are taken into account for the high-frequency magnetic field coupling between device electrodes. Based on the suggested parasitic equivalent circuit, through HFSS and advanced design system (ADS) co-simulation, the equivalent circuit parameters are directly extracted in the multi-step system. The HFSS simulation prediction, measurement data, and modeled frequency response are compared with each other to verify the feasibility of the extraction method and the accuracy of the equivalent circuit. The proposed model demonstrates the distributed and radio-frequency behavior of the device and solves the problem that the equivalent circuit parameters of the conventional InP HEMTs device are limited by the device model and inaccurate at high frequencies when being extracted.

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Han, Jiang An, i Jun Xu. "A Microstrip to Rectangular Waveguide Transition Using Coupling Loop in Millimeter-Wave Band". Applied Mechanics and Materials 40-41 (listopad 2010): 331–34. http://dx.doi.org/10.4028/www.scientific.net/amm.40-41.331.

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A novel millimeter-wave transition from microstrip to rectangular waveguide is introduced in this paper. The theory for this design is explained. The strip conductor on microstrip, which is introduced from the center of a rectangular waveguide broad-wall to its E-plane, is shaped into a triangular loop in the waveguide terminated by a short circuit. A back to back transition operating at Ka band was simulated and fabricated. The experimental results showed the insertion loss of a back to back transition is less than 2.2dB with its return loss greater than 9.1dB from 26.5 GHz to 35.5 GHz.

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Abou-Elnour, A., M. Curow i K. Schünemann. "An efficient physical device-circuit simulator and its application to accurate design of millimeter wave oscillators". International Journal of Infrared and Millimeter Waves 17, nr 6 (czerwiec 1996): 949–71. http://dx.doi.org/10.1007/bf02101429.

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Kim, Jihoon. "Broadband Millimeter-Wave Power Amplifier Using Modified 2D Distributed Power Combining". Electronics 9, nr 6 (28.05.2020): 899. http://dx.doi.org/10.3390/electronics9060899.

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A broadband millimeter-wave (mmWave) power amplifier (PA) was implemented using a modified 2D distributed power combining technique. The proposed power combining was based on a single-ended dual-fed distributed combining (SEDFDC) design technique using zero-phase shifting (ZPS) transmission lines. To improve the input/output power distribution of each power cell within a wide frequency range, N/2-way power dividers/combiners were inserted into the distributed combining structure. Modified ZPS lines also simplified the combining structure and curbed phase variation according to the frequency. These modifications enabled power combining cells to increase without degrading the power bandwidth. The proposed PA was fabricated with a commercial 0.15 μm GaAs pseudo high electron-mobility transistor (pHEMT) monolithic microwave-integrated circuit (MMIC) process. It exhibited 20.3 to 24.2 dBm output power (Pout), 12.9 to 21.8 dB power gain, and 5.2% to 12.7% power-added efficiency (PAE) between 26 and 56 GHz.

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