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Artykuły w czasopismach na temat „Microwave-Assisted Deposition”

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Data publikacji: 6 września 2023

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1

Kang, In-Je, Chang-Hyun Cho, Hyonu Chang, Soo-Ouk Jang, Hyun-Jae Park, Dae-Gun Kim, Kyung-Min Lee i Ji-Hun Kim. "Characteristics of Plasma Flow for Microwave Plasma Assisted Aerosol Deposition". Nanomaterials 11, nr 7 (29.06.2021): 1705. http://dx.doi.org/10.3390/nano11071705.

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To validate the possibility of the developed microwave plasma source with a novel structure for plasma aerosol deposition, the characteristics of the plasma flow velocity generated from the microwave plasma source were investigated by a Mach probe with pressure variation. Simulation with the turbulent model was introduced to deduce calibration factor of the Mach probe and to compare experimental measurements for analyses of collisional plasma conditions. The results show calibration factor does not seem to be a constant parameter and highly dependent on the collision parameter. The measured plasma flow velocity, which witnessed fluctuations produced by a shock flow, was between 400 and 700 m/s. The optimized conditions for microwave plasma assisted aerosol deposition were derived by the results obtained from analyses of the parameters of microwave plasma jet. Under the optimized conditions, Y2O3 coatings deposited on an aluminum substrate were investigated using scanning electron microscope. The results presented in this study show the microwave plasma assisted aerosol deposition with the developed microwave plasma source is highly feasible for thick films with >50 μm.
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2

VANDENBULCKE, L., P. BOU, R. HERBIN, V. CHOLET i C. BENY. "MICROWAVE PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION OF DIAMOND". Le Journal de Physique Colloques 50, nr C5 (maj 1989): C5–177—C5–188. http://dx.doi.org/10.1051/jphyscol:1989525.

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3

Zhou, Huan, Maryam Nabiyouni i Sarit B. Bhaduri. "Microwave assisted apatite coating deposition on Ti6Al4V implants". Materials Science and Engineering: C 33, nr 7 (październik 2013): 4435–43. http://dx.doi.org/10.1016/j.msec.2013.06.043.

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4

Wu, Yong Qiang, i Si Kai Sun. "Microwave Assisted Eletroless Copper Plating on Carbon Nanotubes". Advanced Materials Research 399-401 (listopad 2011): 741–46. http://dx.doi.org/10.4028/www.scientific.net/amr.399-401.741.

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This paper firstly attempt to use microwave technology to assist carbon nanotubes by chemical copper plating, and comparated with the conventional method of copper plating, concluded the advantages of the microwave-assisted chemical deposition ,and try to develop a new technology of carbon nanotube composites.
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5

Kumar, Rajesh, Rajesh Kumar Singh, Alfredo R. Vaz i Stanislav A. Moshkalev. "Microwave-assisted synthesis and deposition of a thin ZnO layer on microwave-exfoliated graphene: optical and electrochemical evaluations". RSC Advances 5, nr 83 (2015): 67988–95. http://dx.doi.org/10.1039/c5ra09936f.

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A rapid and facile microwave-assisted method has been developed for the deposition of a zinc oxide layer on partially microwave exfoliated graphene. The as-prepared hybrids demonstrate enhanced electrochemical properties and show quenching phenomena.
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6

SATO, Yoichiro. "Diamond film grown by microwave plasma-assisted vapor deposition." Journal of the Japan Society for Precision Engineering 53, nr 10 (1987): 1511–14. http://dx.doi.org/10.2493/jjspe.53.1511.

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7

Ibiyemi, Abideen A., Ayodeji O. Awodugba, Olusola Akinrinola i Abass A. Faremi. "Zinc-doped CdS nanoparticles synthesized by microwave-assisted deposition". Journal of Semiconductors 38, nr 9 (wrzesień 2017): 093002. http://dx.doi.org/10.1088/1674-4926/38/9/093002.

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8

Chaudhuri, TapasK, i Anjana Kothari. "Microwave-Assisted Chemical Bath Deposition of Nanostructured ZnO Particles". Journal of Nanoscience and Nanotechnology 9, nr 9 (1.09.2009): 5578–85. http://dx.doi.org/10.1166/jnn.2009.1119.

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9

Laimer, J., i S. Matsumoto. "Pulsed microwave plasma-assisted chemical vapour deposition of diamond". International Journal of Refractory Metals and Hard Materials 14, nr 1-3 (styczeń 1996): 179–84. http://dx.doi.org/10.1016/0263-4368(96)83432-9.

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10

Ndiege, Nicholas, Mark Shannon i Richard I. Masel. "Silicon Nanowires Synthesized via Microwave-Assisted Chemical Vapor Deposition". Electrochemical and Solid-State Letters 10, nr 11 (2007): K55. http://dx.doi.org/10.1149/1.2774970.

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11

Ma, Jeng-Shin, Subrata Das i Chung-Hsin Lu. "Microwave-assisted chemical bath deposition process to fabricate CdS buffer layers used in Cu(In,Ga)Se2 solar cells". RSC Advances 6, nr 109 (2016): 107886–93. http://dx.doi.org/10.1039/c6ra19227k.

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12

Li, Wei-Jin, Ji-Fei Feng, Zu-Jin Lin, Ying-Long Yang, Yan Yang, Xu-Sheng Wang, Shui-Ying Gao i Rong Cao. "Patterned growth of luminescent metal–organic framework films: a versatile electrochemically-assisted microwave deposition method". Chemical Communications 52, nr 20 (2016): 3951–54. http://dx.doi.org/10.1039/c6cc00519e.

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13

Bisht, Atul, S. Chockalingam, O. S. Panwar, A. K. Kesarwani, B. P. Singh i V. N. Singh. "Growth of dense CNT on the multilayer graphene film by the microwave plasma enhanced chemical vapor deposition technique and their field emission properties". RSC Advances 5, nr 109 (2015): 90111–20. http://dx.doi.org/10.1039/c5ra16917h.

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14

Ogawa, Shumpei, Tatsuya Kuroda, Ryuga Koike i Hiroki Ishizaki. "Fabrication of Nitride Thin Films on Si Substrates by Atomic Layer Deposition Technique". MRS Advances 3, nr 3 (2018): 165–70. http://dx.doi.org/10.1557/adv.2018.224.

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AbstractRecently, Plasma Assisted Atomic Layer Deposition Technique will easily control the thickness and the composition of semiconductor films. The radical generated by using the plasma techniques, gave the decrease of the defect into the semiconductor films. In this investigation, the relationship between microwave plasma power, nitrogen gas flow rate and concentration of generated nitrogen radical, was evaluated. At the first, Plasma emission spectrum at microwave plasma power (0 to 400W) was measured using a mixed 200sccm argon gas and 10sccm nitrogen gas. Next, the plasma emission spectrum was measured in the mixing of nitrogen gas flow rate (0 to 40sccm) with 200sccm argon gas flow rate. At that time, the microwave plasma power was set to 200W. Nitrogen radical spectrum were identified from all the emission spectrum, and the nitrogen radical intensity was calculated. As a result, the nitrogen radical intensity became the largest at 200sccm argon gas flow rate and 10sccm nitrogen gas flow rate. In addition, the nitrogen radical intensity increased in proportion to the microwave plasma power. The concentration of generated nitrogen radical could be controlled by changing the microwave plasma power and the nitrogen gas flow rate. Mentioned above, nitride thin films will be obtained on Si Substrates by microwave generated remote plasma assisted atomic layer deposition technique.
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15

Salvadori, M. C., V. P. Mammana, O. G. Martins i F. T. Degasperi. "Plasma-assisted chemical vapour deposition in a tunable microwave cavity". Plasma Sources Science and Technology 4, nr 3 (1.08.1995): 489–94. http://dx.doi.org/10.1088/0963-0252/4/3/019.

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16

Silva, F., K. Hassouni, X. Bonnin i A. Gicquel. "Microwave engineering of plasma-assisted CVD reactors for diamond deposition". Journal of Physics: Condensed Matter 21, nr 36 (19.08.2009): 364202. http://dx.doi.org/10.1088/0953-8984/21/36/364202.

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17

Kuo, Teng-Fan, Zhen-Yu Juang, Chuen-Horng Tsai, You-Ming Tsau, Hsiu-Fung Cheng i I.-Nan Lin. "Microwave-assisted chemical vapor deposition process for synthesizing carbon nanotubes". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 19, nr 3 (2001): 1030. http://dx.doi.org/10.1116/1.1352722.

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18

Zhang, Liu-Xue, Peng Liu i Zhi-Xing Su. "Facile Microwave Assisted Liquid Phase Deposition Process to TiO2 Nanocrystallines". Chinese Journal of Chemistry 24, nr 1 (styczeń 2006): 19–21. http://dx.doi.org/10.1002/cjoc.200690016.

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19

Shi, Yulong, Minhui Tan i X. Jiang. "Deposition of diamond/β–SiC Gradient Composite Films by Microwave Plasma-assisted Chemical Vapor Deposition". Journal of Materials Research 17, nr 6 (czerwiec 2002): 1241–43. http://dx.doi.org/10.1557/jmr.2002.0184.

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Mixed-phase diamond/β–SiC composite films with compositional gradient were prepared by microwave plasma-assisted chemical vapor deposition using a gas mixture of hydrogen, methane and tetramethylsilane (TMS). Single-crystalline silicon wafers, pretreated with diamond nanoparticles before deposition, were used as substrates. The film characterization by scanning electron microscopy, electron probe microanalysis, and energy-dispersive x-ray analysis shows that the contents of diamond and silicon carbide in the films vary with TMS flow rate. Diamond/β–SiC composite films with compositional gradients are achievable by varying the TMS flow rate during the film growth process.
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20

Jang, Soo Ouk, Changhyun Cho, Ji Hun Kim, In Je Kang, Hyonu Chang, Hyunjae Park, Kyungmin Lee, Dae Gun Kim i Hye Won Seok. "Microwave Plasma Assisted Aerosol Deposition (μ-PAD) for Ceramic Coating Applications". Ceramics 5, nr 4 (2.12.2022): 1174–84. http://dx.doi.org/10.3390/ceramics5040083.

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To improve plasma and chemical resistance on various vacuum components used for semiconductor manufacturing equipment, various ceramic coating techniques have been applied. Among these methods for ceramic coating, the well-known atmospheric plasma spray (APS) is advantageous for providing thick film (100 µm or more) deposition. However, there are problems associated with the phase transition of the coating film and poor film quality due to formation of voids. To solve these problems, the aerosol deposition (AD) method has been developed. This method provides nice ceramic film quality. However, the coating rate is quite slow and has difficulty producing thick films (>30 µm). To overcome these limitations, microwave plasma-assisted aerosol deposition (μ-PAD) is applied at low vacuum conditions without the AD nozzle. This method uses a microwave plasma source during the AD process. After enduring a long-term durability test, as a trial run, μ-PAD has been applied on the actual process site. With the Al2O3 powder, μ-PAD shows a coating rate that is 12 times higher than the AD method. In addition, the formation of a thicker film (96 µm) deposition has been demonstrated. On the other hand, the coating film hardness, porosity, adhesion, and withstand voltage characteristics were confirmed to be less than the AD method.
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21

Eddy, C. R., D. L. Youchison, B. D. Sartwell i K. S. Grabowski. "Deposition of diamond onto aluminum by electron cyclotron resonance microwave plasma-assisted CVD". Journal of Materials Research 7, nr 12 (grudzień 1992): 3255–59. http://dx.doi.org/10.1557/jmr.1992.3255.

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Diamond crystallites and thin films have been deposited onto polycrystalline aluminum substrates utilizing an electron cyclotron resonance microwave plasma-assisted chemical vapor deposition (ECR-PACVD) method. For all depositions, the substrates were biased to +40 V dc with respect to ground and their temperature was maintained at 500 °C. Similar deposits were obtained from two different feedgas systems at a total pressure of 1.33 Pa (10 mTorr). The first system consisted of a carbon monoxide (CO) and hydrogen (H2) mixture (CO:H2 = 20:80), and the second was a methane (CH4), oxygen (O2), and hydrogen (H2) mixture (CH4:O2:H2 = 21:10:69). The deposits were subsequently characterized by scanning electron microscopy, micro-Raman spectroscopy, and x-ray diffraction. The results of these analyses indicate that polycrystalline diamond was deposited onto aluminum substrates, as both individual crystallites and continuous films.
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22

Zhao, Guozheng, Qingwei Tan, Changbo Li, Liyan Shang, Daihang Zhang, Xuanxuan Lu i Feng Qiu. "Silver/silver halide supported on mesoporous ceria particles and photo-CWPO degradation under visible light for organic compounds in acrylonitrile wastewater". RSC Advances 11, nr 43 (2021): 26791–99. http://dx.doi.org/10.1039/d1ra04465f.

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Silver/silver halide supported on ordered mesoporous ceria particles (Ag/AgCl/CeO2) were prepared by microwave-assisted soft template method, deposition precipitation method and photoreduction method, and its catalytic performance was investigated.
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23

Malwal, Deepika, i P. Gopinath. "Enhanced photocatalytic activity of hierarchical three dimensional metal oxide@CuO nanostructures towards the degradation of Congo red dye under solar radiation". Catalysis Science & Technology 6, nr 12 (2016): 4458–72. http://dx.doi.org/10.1039/c6cy00128a.

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In the present study, we report a two step method for the synthesis of metal oxide (ZnO and Fe3O4) deposited on CuO nanowire arrays over 3D copper foam using thermal oxidation followed by microwave-assisted deposition.
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24

Ndiege, Nicholas, Vaidyanathan Subramanian, Mark A. Shannon i Richard I. Masel. "Rapid synthesis of tantalum oxide dielectric films by microwave microwave-assisted atmospheric chemical vapor deposition". Thin Solid Films 516, nr 23 (październik 2008): 8307–14. http://dx.doi.org/10.1016/j.tsf.2008.03.049.

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25

SONG RU-AN, CHENG XIAN-AN i ZHOU ZHONG-YI. "MAGNETIC FIELD ASSISTED MICROWAVE PLASMA AND LARGE AREA DIAMOND FILM DEPOSITION". Acta Physica Sinica 39, nr 10 (1990): 1635. http://dx.doi.org/10.7498/aps.39.1635.

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26

Campargue, A., M. Chenevier, L. Fayette, B. Marcus, M. Mermoux i A. J. Ross. "Fourier transform diagnostics of gaseous species during microwave assisted diamond deposition". Applied Physics Letters 62, nr 2 (11.01.1993): 134–36. http://dx.doi.org/10.1063/1.109349.

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27

Fu, Y., B. Yan, N. L. Loh, C. Q. Sun i P. Hing. "Hydrogen embrittlement of titanium during microwave plasma assisted CVD diamond deposition". Surface Engineering 16, nr 4 (sierpień 2000): 355–60. http://dx.doi.org/10.1179/026708400101517251.

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28

Zhang, Qing, S. F. Yoon, J. Ahn, Bo Gan, Rusli i Ming-Bin Yu. "Synthesis of Carbon Tubes Using Microwave Plasma-assisted Chemical Vapor Deposition". Journal of Materials Research 15, nr 8 (sierpień 2000): 1749–53. http://dx.doi.org/10.1557/jmr.2000.0252.

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Carbon tubes were successfully produced using microwave plasma-enhanced chemical vapor deposition on silicon, quartz, and ceramic substrates. The carbon tubes, about 80–100 nm in diameter and a few tens of microns in length, were formed under methane and hydrogen plasma at 720 °C with the aid of iron oxide particles. In this approach, an average tube density of about 109 cm−2 was obtained. The crooked and nonuniform diameters of some tubes suggested that they were composed of incompletely crystallized graphitic shells due to existing defects. The characteristic of the tubes grown upward on the silicon substrate accounted for a remarkably large electron field emission current of 0.1 mA/cm2 from the surface of the tube sample at a low turn-on field of 3 V/μm.
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29

Huang, Haowen, Shufeng Zhang, Li Qi, Xiao Yu i Yi Chen. "Microwave-assisted deposition of uniform thin gold film on glass surface". Surface and Coatings Technology 200, nr 14-15 (kwiecień 2006): 4389–96. http://dx.doi.org/10.1016/j.surfcoat.2005.02.203.

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30

Xin, Mudi, KunWei Li i Hao Wang. "Synthesis of CuS thin films by microwave assisted chemical bath deposition". Applied Surface Science 256, nr 5 (grudzień 2009): 1436–42. http://dx.doi.org/10.1016/j.apsusc.2009.08.104.

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31

Cholet, V., R. Herbin i L. Vandenbulcke. "Low temperature boron coatings by microwave plasma assisted chemical vapour deposition". Thin Solid Films 192, nr 2 (listopad 1990): 235–51. http://dx.doi.org/10.1016/0040-6090(90)90069-p.

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32

Obaid, A. S., M. A. Mahdi, Z. Hassan i M. Bououdina. "PbS nanocrystal solar cells fabricated using microwave-assisted chemical bath deposition". International Journal of Hydrogen Energy 38, nr 2 (styczeń 2013): 807–15. http://dx.doi.org/10.1016/j.ijhydene.2012.10.046.

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33

Yoshida, Suguru, i Masahito Sano. "Microwave-assisted chemical modification of carbon nanohorns: Oxidation and Pt deposition". Chemical Physics Letters 433, nr 1-3 (grudzień 2006): 97–100. http://dx.doi.org/10.1016/j.cplett.2006.09.074.

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34

Brewer, M. A., I. G. Brown, M. R. Dickinson, J. E. Galvin, R. A. MacGill i M. C. Salvadori. "Simple, safe, and economical microwave plasma‐assisted chemical vapor deposition facility". Review of Scientific Instruments 63, nr 6 (czerwiec 1992): 3389–93. http://dx.doi.org/10.1063/1.1142557.

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35

Sheldon, Brian W., Roseann Csencsits, Janet Rankin, Rachel E. Boekenhauer i Yuzo Shigesato. "Bias‐enhanced nucleation of diamond during microwave‐assisted chemical vapor deposition". Journal of Applied Physics 75, nr 10 (15.05.1994): 5001–8. http://dx.doi.org/10.1063/1.355792.

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36

Wu, Chung-Shu, Chung-Yang Lee, Jem-Kun Chen, Shiao-Wei Kuo, Shih-Kang Fan, Chih-Chia Cheng, Feng-Chih Chang i Fu-Hsiang Ko. "Microwave-assisted Electroless Deposition of Silver Nanoparticles onto Multiwalled Carbon Nanotubes". International Journal of Electrochemical Science 7, nr 5 (2012): 4133–42. http://dx.doi.org/10.1016/s1452-3981(23)19526-5.

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37

Nishitani-Gamo, Mikka, Isao Sakaguchi, Tomohide Takami, Katsunori Suzuki, Isao Kusunoki i Toshihiro Ando. "Homoepitaxial (111) diamond grown by temperature-controlled chemical vapor deposition". Journal of Materials Research 14, nr 9 (wrzesień 1999): 3518–24. http://dx.doi.org/10.1557/jmr.1999.0476.

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We investigated the growth of high-quality homoepitaxial diamond on the (111) face in a microwave-assisted plasma chemical-vapor-deposition system incorporating an individual substrate heating/cooling device. The grown diamond films were characterized by scanning electron microscopy, reflection high-energy electron diffraction, atomic force microscopy, confocal micro-Raman spectroscopy, and secondary ion mass spectrometry. The (111) diamond films show a tendency to incorporate a significant amount of hydrogen during chemical-vapor-deposition growth. Hydrogen incorporation degrades the crystal quality and surface smoothness. The amount of incorporated hydrogen decreases with the decrease in deposition temperature. We have shown that the crystal quality and surface smoothness of homoepitaxial diamond strongly depend on the substrate temperature. Independent control of the substrate temperature and incident microwave power is essential for high-quality diamond homoepitaxy.
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38

Imam, M. Ashraf, Arne W. Fliflet, Ralph W. Bruce, C. R. Feng, Chad Stephenson, A. K. Kinkead i Steven H. Gold. "Recent Advances in Microwave, Millimeter-Wave and Plasma-Assisted Processing of Materials". Materials Science Forum 638-642 (styczeń 2010): 2052–57. http://dx.doi.org/10.4028/www.scientific.net/msf.638-642.2052.

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We present results on microwave, millimeter-wave, and millimeter-wave-driven plasma-assisted processing of materials. The research is primarily based on two systems- a 2.45 GHz, 6 kW S-band system and an 83 GHz, 15 kW gyrotron-based quasi-optical system. The S-Band system is used to synthesize nanophase metals, metal mixtures, and metal oxides by our patented continuous microwave polyol process, which has potential for large scale and low cost production. This system is also being investigated to develop techniques for titanium melting and sintering. The 83-GHz system is used for rapid sintering of ceramic powder compacts to produce polycrystalline materials with limited grain growth. An important application is to the development of polycrystalline laser host materials for high power solid-state lasers, where the requirement is for transparency with high optical quality and good lasing efficiency. We are currently investigating solid-state reactive sintering of Nd-doped YAG (Yttrium Aluminum Garnet) from commercial oxide powders. This has thus far yielded translucent samples with good fluorescence lifetime of the lasing state. Techniques for further reducing light scattering by residual pores are being investigated. Finally, the millimeter-wave system is being used in the development of millimeter-wave plasma-assisted diamond deposition, as the quasi-optical system has significant advantages over conventional microwave plasma-assisted diamond deposition systems. The results and implications of this wide range of materials processing experiments are presented and discussed.
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39

Jung, S. C. "The microwave-assisted photo-catalytic degradation of organic dyes". Water Science and Technology 63, nr 7 (1.04.2011): 1491–98. http://dx.doi.org/10.2166/wst.2011.393.

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In this study, TiO2 photo-catalyst balls produced by the chemical vapour deposition method were used for degradation of organic dyes in which simultaneous irradiation of microwave and UV was evaluated. An electrodeless UV lamp that emits UV upon the irradiation of microwave was developed to irradiate microwave and UV simultaneously. The degradation reaction rate was shown to be higher with higher microwave intensity, under stronger acidic or basic conditions, and with a larger amount of O2 gas or H2O2 addition. The effect of addition of H2O2 was not significant when photo-catalysis was used without additional microwave irradiation or when microwave was irradiated without the use of photo-catalysts. When H2O2 was added under simultaneous use of photo-catalysis and microwave irradiation, however, considerably higher degradation reaction rates were observed.
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40

Zhu, Guangyan, Qian Peng, Ting Luo, Hao Pan, Yuehong Wang i Zhiwei Peng. "Synthesis of Ti6Al4V/SrFHA Composites by Microwave-Assisted Liquid Phase Deposition and Calcination". Materials 15, nr 18 (7.09.2022): 6206. http://dx.doi.org/10.3390/ma15186206.

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The feasibility of synthesis of Ti6Al4V/SrFHA (Ca9.37Sr0.63(PO4)6F2) composites via coating strontium and fluorine co-doped HA to Ti6Al4V substrate by microwave-assisted liquid phase deposition and calcination was evaluated, with a focus on the effect of the deposition temperature from 30 °C to 70 °C. The outcomes demonstrate that strontium and fluorine can be successfully doped into HA to form a SrFHA coating with modified micromorphology which is deposited on the alloy. When the deposition temperature was 50 °C, the coating with the largest uniform continuous SrFHA coverage was obtained. After calcination, the adhesion strength and Vickers microhardness of the Ti6Al4V/SrFHA composite increased from 0.68 MPa and 323 HV to 2.41 MPa and 329 HV, respectively, with a decrease in the water contact angle from 10.88° to 7.24°, exhibiting enhancement of both mechanical properties and wettability. Moreover, the composite obtained at the deposition temperature of 50 °C exhibited good bioactivity based on the simulate body fluid (SBF) test. On account of the above features primarily as a result of the combined effect of the co-doping of strontium and fluorine, high crystallinity of SrFHA, large surface roughness, and formation of the titanium oxide transition layer, the Ti6Al4V/SrFHA composite shows great potential in dental implantology.
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41

Paosawatyanyong, Boonchoat, K. Honglertsakul i D. K. Reinhard. "DLC-Film Schottky Barrier Diodes". Solid State Phenomena 107 (październik 2005): 75–80. http://dx.doi.org/10.4028/www.scientific.net/ssp.107.75.

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A microwave plasma reactor (MPR) is constructed as a facility for the plasma assisted chemical vapor deposition (PACVD) process. The reactor is a mode-adjustable resonance cavity of cylindrical shape. A 2.45 GHz microwave generator is used to ignite the plasma inside the lengthadjustable cavity. The diamond-like carbon (DLC) thin film depositions onto the silicon substrates are carried out using H2–CH4 discharge. The Schottky barrier diodes (SBD) are then formed on to the DLC films. The responses of DLC-SBD to DC and time varying signals have been studied as a function of frequency. The frequency dependent response results are compared to the computer models, which includes as input parameters the bulk series resistance, the capacitance associated with the bulk material between the space-charge layer and the ohmic contact, the space-charge layer capacitance, and the diode dynamic resistance.
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Santos, J. A., V. F. Neto, D. Ruch i J. Grácio. "The Deposition of Nanocrystalline Diamond by HFCVD in Different Materials". Journal of Nano Research 18-19 (lipiec 2012): 227–34. http://dx.doi.org/10.4028/www.scientific.net/jnanor.18-19.227.

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Nanocrystalline diamond films, as other forms of diamond, possess a set of extreme properties, such as high thermal conductivity, hardness and resistance to hazard environments. Although an enormous focus has been placed into the deposition of nanocrystalline diamond films, most of this research uses microwave plasma assisted CVD systems. However, the growth conditions used in microwave systems cannot be directly used in hot-filament CVD systems. In this paper, it is meant to enlarge the knowledge of the process of depositing nanocrystalline films on different engineering materials, by means of hot-filament CVD systems. The coated materials include silicon (Si); titanium (Ti); tungsten carbide with cobalt as binder (WC-Co); and tungsten carbide with nickel as binder (WC-Ni). On the former two substrates, the diamond films were achieved on the bare substrates and with the use of an interlayer. The interlayers used were chromium nitride (CrN) and titanium aluminium nitride (TiAlN). Additionally, the as-grown films were characterized for hardness, quality and microstructure using scanning electron microscopy, Raman spectroscopy and nanohardness testing.
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Weimer, W. A., F. M. Cerio i C. E. Johnson. "Examination of the chemistry involved in microwave plasma assisted chemical vapor deposition of diamond". Journal of Materials Research 6, nr 10 (październik 1991): 2134–44. http://dx.doi.org/10.1557/jmr.1991.2134.

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Chemical reaction products formed in a microwave plasma assisted chemical vapor deposition apparatus for diamond film deposition are detected using mass spectrometry. Carbon source gases CH4, C2H6, C2H4, or C2H2 produce CH4, C2H2, CO, and H2O as major stable reaction products when introduced into a H2/O2 plasma under diamond deposition conditions. The effect of oxygen addition is similar for all carbon source gases with respect to reaction product formation, indicating that a common reaction mechanism is active in all cases. On a qualitative basis, these observations are consistent with a mechanism describing the oxidation of CH4 in flames. No beneficial effects were observed using alternating growth/etch cycles to deposit films. Films grown using CH4 as the carbon source gas consistently produce higher quality diamond films compared to films grown from C2H2.
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Purniawan, Agung, E. Hamzah i M. R. M. Toff. "Surface Roughness and Morphology Analysis Using an Atomic Force Microscopy of Polycrystalline Diamond Coated Si3N4 Deposited by Microwave Plasma Assisted Chemical Vapor Deposition". Solid State Phenomena 136 (luty 2008): 153–60. http://dx.doi.org/10.4028/www.scientific.net/ssp.136.153.

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Diamond is the hardest material and has high chemical resistant which is one form of carbon. In the present work a study was carried out on polycrystalline diamond coated Si3N4 substrate. The diamond was deposited by Microwave Plasma Assisted Chemical Vapor Deposition (MPACVD) under varying deposition parameters namely CH4 diluted in H2, microwave power and chamber pressure. SEM and AFM are used to investigate the surface morphology and surface roughness. Nucleation phenomena and crystal width were also studied using AFM. Based on SEM investigation it was found that the chamber pressure and %CH4 have more significant effects on nucleation and facet of polycrystalline diamond, In addition microwave power has an effect on the diamond facet that changed from cubic to cauliflower structure. Surface roughness results show that increasing the %CH4 has decreased surface roughness 334.83 to 269.99 nm at 1 to 3% CH4, respectively. Increasing microwave power leads to increase in diamond nucleation and coalescence which lead to less surface roughness. Increasing gas pressure may eliminate Si contamination however it reduces diamond nucleation.
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Huang, Su Yong, i Kai Fu Li. "Antibacterial Property of Chinese fir/TiO2 Composite". Advanced Materials Research 194-196 (luty 2011): 1663–66. http://dx.doi.org/10.4028/www.scientific.net/amr.194-196.1663.

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Small samples of Chinese fir/TiO2Composite were prepared using sol-gel method and microwave assisted liquid phase deposition (MWLPD) method for the first time. Results of antibacterial test show that during a one year test the samples exhibited prominent, broad-spectrum and long-lasting antibacterial performance, but were also influenced by light exposure and temperature.
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Xu, HaiYan, Hao Wang, TouNan Jin i Hui Yan. "Rapid fabrication of luminescent Eu:YVO4 films by microwave-assisted chemical solution deposition". Nanotechnology 16, nr 1 (3.12.2004): 65–69. http://dx.doi.org/10.1088/0957-4484/16/1/014.

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Hsieh, Chien-Te, Dong-Ying Tzou, Ching Pan i Wei-Yu Chen. "Microwave-assisted deposition, scalable coating, and wetting behavior of silver nanowire layers". Surface and Coatings Technology 207 (sierpień 2012): 11–18. http://dx.doi.org/10.1016/j.surfcoat.2012.02.026.

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Asmussen, J., T. A. Grotjohn, T. Schuelke, M. F. Becker, M. K. Yaran, D. J. King, S. Wicklein i D. K. Reinhard. "Multiple substrate microwave plasma-assisted chemical vapor deposition single crystal diamond synthesis". Applied Physics Letters 93, nr 3 (21.07.2008): 031502. http://dx.doi.org/10.1063/1.2961016.

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Cerio, F. M., i W. A. Weimer. "Electrostatic probe measurements for microwave plasma‐assisted chemical vapor deposition of diamond". Applied Physics Letters 59, nr 26 (23.12.1991): 3387–89. http://dx.doi.org/10.1063/1.105683.

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Kothari, Anjana, i Tapas K. Chaudhuri. "One-minute microwave-assisted chemical bath deposition of nanostructured ZnO rod-arrays". Materials Letters 65, nr 5 (marzec 2011): 847–49. http://dx.doi.org/10.1016/j.matlet.2010.12.017.

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