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Artykuły w czasopismach na temat "Metallizing"

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Davidoff, Charles. "Metallizing nonconductors". Metal Finishing 98, nr 1 (styczeń 2000): 381–87. http://dx.doi.org/10.1016/s0026-0576(00)80347-5.

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Davidoff, Charles. "Metallizing nonconductors". Metal Finishing 97, nr 1 (styczeń 1999): 381–87. http://dx.doi.org/10.1016/s0026-0576(00)83098-6.

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Davidoff, Charles. "Metallizing nonconductors". Metal Finishing 99 (styczeń 2001): 380–86. http://dx.doi.org/10.1016/s0026-0576(01)85298-3.

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Davidoff, Charles. "Metallizing nonconductors". Metal Finishing 100 (styczeń 2002): 365–71. http://dx.doi.org/10.1016/s0026-0576(02)82040-2.

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Davidoff, Charles. "Metallizing nonconductors". Metal Finishing 97, nr 1 (styczeń 1999): 388–94. http://dx.doi.org/10.1016/s0026-0576(99)80040-3.

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Davidoff, Charles. "Metallizing nonconductors". Metal Finishing 93, nr 1 (styczeń 1995): 362–68. http://dx.doi.org/10.1016/0026-0576(95)93385-f.

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Liu, Gui Wu, Guan Jun Qiao, Hong Jie Wang i Zhi Hao Jin. "Microstructure and Strength of Alumina-Metal Joint Brazed by Activated Molybdenum–Manganese Method". Key Engineering Materials 353-358 (wrzesień 2007): 2049–52. http://dx.doi.org/10.4028/www.scientific.net/kem.353-358.2049.

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High purity alumina/stainless steel joints were produced via activated molybdenummanganese (Mo-Mn) route using 72Ag-28Cu solder. Microstructures of the metallized ceramic and joint sections were observed by scanning electron microscopy. Joint strength was tested by shear-loading method. Some process factors were characterized and analyzed, which include temperature, holding time and heating and cooling rate in ceramic metallization process. The effects of Ni plating and succedent annealing were also investigated. Experimental results show that, migration of glassy phases is the main mechanism of the ceramic metallization. Glass migration direction is from metallizing layer to ceramic side. In the ranges of temperature and holding time of metallization, joint strength firstly increases and then falls with temperature raising and time extending. More fully sintered metallizing layer can be obtained while the temperature increases from 1200oC to 1500oC, and the time prolongs from 30min to 60min. Over-sintering of the metallizing layer will take place with metallizing temperature of 1600 oC and overlong holding time of 70min, which reduces the joint strength. The slower heating and cooling rate, and the annealing after Ni plating both help enhance the seal strength, due to relieving or eliminating interlayer residual thermal stress. However, too slow heating and cooling rate, such as 5 oC /min, is equivalent to overlong holding time and finally also decline the strength. A thin Ni coating helps solder wet metallizing surface, and stops solder erode metallizing layer.
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Gupta, R. K. "Improved Vacuum Metallizing Techniques". Journal of Optics 14, nr 3 (wrzesień 1985): 112–14. http://dx.doi.org/10.1007/bf03549132.

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Gebhardt, John, Keith Waryold, Dave Oglesby i John Graves. "Horizontal processing for metallizing microvias". Circuit World 28, nr 1 (marzec 2002): 34–39. http://dx.doi.org/10.1108/03056120210407720.

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Rubinstein, M. "ELECTROCHEMICAL METALLIZING OF ADVANCED MATERIALS". Materials and Manufacturing Processes 4, nr 4 (styczeń 1989): 561–78. http://dx.doi.org/10.1080/10426918908956315.

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Rozprawy doktorskie na temat "Metallizing"

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Chapples, J. "Electrochemical and chemical methods of metallizing plastic films". Thesis, Cranfield University, 1991. http://hdl.handle.net/1826/3240.

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This thesis describes two novel techniques for the metallization of non-electroactive polymer films and thicker sectioned polyethylene and nylon substrates. In the first approach, non-electroactive polymer substrates were impregnated with surface layers of polypyrrole and polyaniline, using electrochemical and chemical methods of polymerization. The relative merits of both these approaches are discussed and compared with other methods in the literature. The resultant composite materials exhibited sufficient conductivity to permit the direct electrodeposition of metal surface coats. Polypyrrole coated substrates were also metallized using chemical methods. Cyclic voltammetry studies and scanning electron microscopy of metal coated polypyrrole, showed that metal deposition occurred mainly at the polymer surface by a mechanism of instantaneous nucleation and growth. Using optimized deposition conditions, both electrochemical and chemical metal deposition methods were used to deposit highly reflecting and coherent metal layers onto conducting polymer coated materials. The second approach of metallizing polymers, was the metallization of non-electroactive polymer films by the electroreduction of silver from non-aqueous based silver plating solutions. The effects of the electrode substrate, the deposition potential, and the concentration of metal ions in solution were investigated to determine suitable metal salt/solvent, and polymer film/solvent combinations. The resultant metallized polymer films were evaluated using optical and scanning electron microscopy, ac impedance, and reflectance measurements. These studies enabled the optimum deposition conditions to be determined, and these were subsequently used for the preparation of high quality, uniform, and reflective metal coated films. The results for the electrodeposition of silver into polymer films using the latter approach are compared with those obtained from alternative electrochemical and chemical methods of metallizing polymer films.
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Leong, Chuen Shiong. "Repair/strengthening of steel angles using thermal spray metallizing". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2000. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape3/PQDD_0013/MQ53172.pdf.

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Gall, Martin. "Investigation of electromigration reliability in Al(Cu) interconnects /". Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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Contarino, Mark Ryan Chaiken Irwin M. Pourrezaei Kambiz. "Self-assembling, coiled coil interfaces for nanoscale amperometric biosensors /". Philadelphia, Pa. : Drexel University, 2008. http://hdl.handle.net/1860/2819.

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Martini, David M. Kelber Jeffry Alan. "Metallization and modification of low-k dielectric materials". [Denton, Tex.] : University of North Texas, 2008. http://digital.library.unt.edu/permalink/meta-dc-9754.

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Chan, Yu Hin. "Optimization of metallization and process variables in low temperature wire bonding technology /". View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?MECH%202003%20CHAN.

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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003.
Includes bibliographical references (leaves 129-132). Also available in electronic version. Access restricted to campus users.
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Adedeji, Adetayo V. William John R. "Composite contact metallization on SiC for high temperature applications in air". Auburn, Ala., 2005. http://repo.lib.auburn.edu/2005%20Summer/doctoral/ADEDEJI_ADETAYO_15.pdf.

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Witt, Kevin L. "Development of a Ti:W salicide-nitride based multilayer metallization for VLSI application /". Online version of thesis, 1992. http://hdl.handle.net/1850/11045.

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Pritchett, Merry. "Adherence/Diffusion Barrier Layers for Copper Metallization: Amorphous Carbon:Silicon Polymerized Films". Thesis, University of North Texas, 2004. https://digital.library.unt.edu/ark:/67531/metadc4493/.

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Semiconductor circuitry feature miniaturization continues in response to Moore 's Law pushing the limits of aluminum and forcing the transition to Cu due to its lower resistivity and electromigration. Copper diffuses into silicon dioxide under thermal and electrical stresses, requiring the use of barriers to inhibit diffusion, adding to the insulator thickness and delay time, or replacement of SiO2 with new insulator materials that can inhibit diffusion while enabling Cu wetting. This study proposes modified amorphous silicon carbon hydrogen (a-Si:C:H) films as possible diffusion barriers and replacements for SiO2 between metal levels, interlevel dielectric (ILD), or between metal lines (IMD), based upon the diffusion inhibition of previous a-Si:C:H species expected lower dielectric constants, acceptable thermal conductivity. Vinyltrimethylsilane (VTMS) precursor was condensed on a titanium substrate at 90 K and bombarded with electron beams to induce crosslinking and form polymerized a-Si:C:H films. Modifications of the films with hydroxyl and nitrogen was accomplished by dosing the condensed VTMS with water or ammonia before electron bombardment producing a-Si:C:H/OH and a-Si:C:H/N and a-Si:C:H/OH/N polymerized films in expectation of developing films that would inhibit copper diffusion and promote Cu adherence, wetting, on the film surface. X-ray Photoelectron Spectroscopy was used to characterize Cu metallization of these a-Si:C:H films. XPS revealed substantial Cu wetting of a-Si:C:H/OH and a-Si:C:H/OH/N films and some wetting of a-Si:C:H/N films, and similar Cu diffusion inhibition to 800 K by all of the a-:S:C:H films. These findings suggest the possible use of a-Si:C:H films as ILD and IMD materials, with the possibility of further tailoring a-Si:C:H films to meet future device requirements.
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Manandhar, Sudha. "Free Radical Induced Oxidation, Reduction and Metallization of NiSi and Ni(Pt)Si Surfaces". Thesis, University of North Texas, 2010. https://digital.library.unt.edu/ark:/67531/metadc31542/.

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NiSi and Ni(Pt)Si, and of the effects of dissociated ammonia on oxide reduction was carried out under controlled ultrahigh vacuum (UHV) conditions. X-ray photoelectron spectroscopy (XPS) has been used to characterize the evolution of surface composition. Vicinal surfaces on NiSi and Ni(Pt)Si were formed in UHV by a combination of Ar+ sputtering and thermal annealing. Oxidation of these surfaces in the presence of either O+O2 or pure O2 at room temperature results in the initial formation of a SiO2 layer ~ 7 Å thick. Subsequent exposure to O2 yields no further oxidation. Continued exposure to O+O2, however, results in rapid silicon consumption and, at higher exposures, the kinetically-driven oxidation of the transition metal(s), with oxides >35Ǻ thick formed on all samples, without passivation. The addition of Pt retards but does not eliminate oxide growth or Ni oxidation. At higher exposures, in Ni(Pt)Si surface the kinetically-limited oxidation of Pt results in Pt silicate formation. Substrate dopant type has almost no effect on oxidation rate. Reduction of the silicon oxide/metal silicate is carried out by reacting with dissociated NH3 at room temperature. The reduction from dissociated ammonia (NHx+H) on silicon oxide/ metal silicate layer shows selective reduction of the metal oxide/silicate layer, but does not react with SiO2 at ambient temperature.
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Książki na temat "Metallizing"

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Rubinstein, Marvin. Electrochemical metallizing. New York, NY: Van Nostrand Reinhold, 1986.

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Moran, Robert. Markets for metallizing technologies. Norwalk, CT: Business Communications Co., 1995.

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Rubinstein, Marvin. Electrochemical metallizing: Principles and practice. New York: Van Nostrand Reinhold, 1987.

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Rubinstein, Marvin. Das Tampongalvanisieren. Saulgau/Württ: E.G. Leuze, 1985.

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Richard, Suchentrunk, red. Metallizing of plastics: A handbook of theory and practice. Materials Park, Ohio: ASM International, 1993.

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Munich), NATO Advanced Research Workshop on Metallization and Metal-Semiconductor Interfaces (1988 Technical University of. Metallization and metal-semiconductor interfaces. New York: Plenum Press, 1989.

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Symposium on Electromigration of Metals (1984 New Orleans, La.). Proceedings of the Symposium on Electromigration of Metals and First International Symposium on Multilevel Metallization and Packaging. Pennington, NJ: Electrochemical Society, 1985.

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R, Wilson Syd, Tracy Clarence J i Freeman John L, red. Handbook of multilevel metallization for integrated circuits: Materials, technology, and applications. Park Ridge, N.J., U.S.A: Noyes, 1993.

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1951-, Andricacos Panayotis C., red. Electrochemical synthesis and modification of materials: Symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A. Pittsburgh, Pa: Materials Research Society, 1997.

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Krishna, Shenai, red. VLSI metallization: Physics and technologies. Boston: Artech House, 1991.

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Części książek na temat "Metallizing"

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Gooch, Jan W. "Metallizing". W Encyclopedic Dictionary of Polymers, 453. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_7353.

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Gooch, Jan W. "Metallizing Agents". W Encyclopedic Dictionary of Polymers, 453. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_7354.

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Southward, Robin E., D. Scott Thompson, David W. Thompson, Maggie L. Caplan i Anne K. St. Clair. "Preparation of Silvered Polyimide Mirrors via Self-Metallizing Poly(Amic Acid) Resins". W Metal-Containing Polymeric Materials, 349–56. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0365-7_28.

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"Metallizing". W Encyclopedic Dictionary of Polymers, 607–8. New York, NY: Springer New York, 2007. http://dx.doi.org/10.1007/978-0-387-30160-0_7236.

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"Metallizing agents". W Encyclopedic Dictionary of Polymers, 608. New York, NY: Springer New York, 2007. http://dx.doi.org/10.1007/978-0-387-30160-0_7237.

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"Metallizing of Plastics". W Engineered Materials Handbook Desk Edition, 356–64. ASM International, 1995. http://dx.doi.org/10.31399/asm.hb.emde.a0003022.

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"metallizing | metalizing, adj." W Oxford English Dictionary. Wyd. 3. Oxford University Press, 2023. http://dx.doi.org/10.1093/oed/1170265535.

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"metallizing | metalizing, n." W Oxford English Dictionary. Wyd. 3. Oxford University Press, 2023. http://dx.doi.org/10.1093/oed/8056440947.

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Bishop, Charles A., i Eldridge M. Mount. "Vacuum metallizing for flexible packaging". W Multilayer Flexible Packaging, 185–202. Elsevier, 2010. http://dx.doi.org/10.1016/b978-0-8155-2021-4.10014-0.

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Bishop, Charles A., i Eldridge M. Mount. "Vacuum Metallizing for Flexible Packaging". W Multilayer Flexible Packaging, 235–55. Elsevier, 2016. http://dx.doi.org/10.1016/b978-0-323-37100-1.00015-6.

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Streszczenia konferencji na temat "Metallizing"

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Benson, Lee. "Electrochemical Metallizing, Tooling Design, and Application". W Annual Aerospace/Airline Plating and Metal Finishing Forum and Exposition. 400 Commonwealth Drive, Warrendale, PA, United States: SAE International, 1988. http://dx.doi.org/10.4271/880870.

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Soukiassian, Patrick G. "Metallizing A Semiconductor Surface With Hydrogen". W PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994146.

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Serritella, Eric E. "Electrochemical Metallizing - An Aircraft Turbine Engine Restoration Tool". W Airframe Finishing, Maintenance & Repair Conference & Exposition. 400 Commonwealth Drive, Warrendale, PA, United States: SAE International, 1991. http://dx.doi.org/10.4271/910930.

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Serritella, Eric E. "Zinc Electrochemical Metallizing for Corrosion Protection of Automobile Wheel Hubs". W SAE Automotive Corrosion and Prevention Conference and Exposition. 400 Commonwealth Drive, Warrendale, PA, United States: SAE International, 1991. http://dx.doi.org/10.4271/912288.

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Horton, A. M. "Zinc Metallizing for External Corrosion Control of Ductile Iron Pipe". W Pipelines 2014. Reston, VA: American Society of Civil Engineers, 2014. http://dx.doi.org/10.1061/9780784413692.118.

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Zhang, T., E. Padayodi, R. N. Raoelison i J. C. Sagot. "Development of Compatibilizing Sublayer for Metallizing CFRP Structures by Cold Spray". W ITSC2022. DVS Media GmbH, 2022. http://dx.doi.org/10.31399/asm.cp.itsc2022p0893.

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Abstract This study aims to develop a metal-based compatibilizing sublayer on a Carbon Fiber-Reinforced Polymer (CFRP) composite to overcome the erosion issue of polymer substrate using the cold spray deposition technique. The objective is to contribute to the in-situ repair of aircraft structures. Two cases of sublayers, i.e., Al-based sublayer (1126 μm thick) and Cu-based sublayer (547 μm thick), have been prepared and co-cured with the CFRP substrates by pressure assisted molding process. Gas-atomized copper powders were deposited on a reference sample of aluminum panel (A-0) and on two functionalized composite substrates (A-1 and C-1) by a high-pressure cold spraying (HPCS) process. The results show that cold spray deposition onto the Al-based sublayer leads to a coating formation whereas the Cu-based sublayer is strongly eroded by the supersonic collision of copper powders. Scanning electronic microscope (SEM) morphologies were used to investigate the HPCS deposition mechanisms on various configurations of substrates. It was found that the high deposition efficiency of case Cu/A-0 was achieved by metallic bonding, evidenced by the significant flattening powders and agglomeration phenomenon of multiple particles. The copper particles of case Cu/A-1, encapsulated by the deformed aluminum powders, could anchor to the substrate via mechanical interlocking, whereas only pure localized fracture of epoxy and exposed broken carbon fibers were observed on the substrate of case Cu/C-1. The results demonstrated the feasibility of an Al-based sublayer-assisted cold spray process for the thermosetting CFRP composite to achieve a successful deposition of copper powders, which also emphasized the necessity to search an optimal material coupling between sublayers and coatings.
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Sabard, A., A. Albassam, S. Chadha i T. Hussain. "Cold Spraying of Metallic Powders Onto Polymeric Substrates: Influence of Gas Preheating Temperature on the Coating Deposition". W ITSC2018, redaktorzy F. Azarmi, K. Balani, H. Li, T. Eden, K. Shinoda, T. Hussain, F. L. Toma, Y. C. Lau i J. Veilleux. ASM International, 2018. http://dx.doi.org/10.31399/asm.cp.itsc2018p0159.

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Abstract Common issues such as ice formation on wind turbine blades and lightning strikes on airplanes can be mitigated by metallizing polymers and composites used on the outer surface of the component. Cold gas dynamic spray is a novel process that has the potential to be used for metallization of polymer and composite surfaces to produce electrically and/or thermally conductive components. In this study, mixed Cu-Zn and Al-Zn feedstock powders were deposited onto polypropylene and nylon-6 substrates to investigate the viability of metallizing nonmetallic surfaces using a commercially available low-pressure cold spray process. The behavior of the individual metallic particles upon impact on the polymers and the deformation of the substrate were characterized by coating the two feedstock powders onto a nylon-6 substrate over a wide temperature range. The Cu-Zn coating was deposited in thicknesses up to 1 mm onto the nylon-6 substrate using optimized parameters. To understand the deposition of the metallic powder onto the polymers, the process was modeled using computational fluid dynamics methods. The correlation of the gas and particle modeling with examination of the coating microstructure highlighted the major importance of the particle velocity during cold spray deposition.
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Cowan, James J., i W. Dennis Slafer. "Advances in Holographic Embossing: The Polaform Process". W Holography. Washington, D.C.: Optica Publishing Group, 1986. http://dx.doi.org/10.1364/holography.1986.tub1.

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The Polaform process is a relatively new technique for the mass replication of holographic recordings by means of embossing. The process consists of the following major steps: Recording of a holographic interference pattern in photoresist; formation of a master metal replica of the photoresist pattern by electroplating; and use of the metal master or a metal replica to repeatedly emboss this pattern into long sheets of plastic. In certain cases, there is a fourth step involving metallizing and die cutting of the plastic sheet.
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Petrescu, Emil, Paul Penciou, Camelia Petrescu i Marinela Catrinciuc. "Execution of chemical metallizing of the inlet opening of a puncture in material". W SIOEL: Sixth Symposium of Optoelectronics, redaktorzy Teodor Necsoiu, Maria Robu i Dan C. Dumitras. SPIE, 2000. http://dx.doi.org/10.1117/12.378673.

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Rubinstein, Mary, John Lembo i Fred Swartling. "Two Special Cost-Effective Applications for Electrochemical Metallizing for Improved Brazing and Bonding". W Annual Aerospace/Airline Plating and Metal Finishing Forum and Exposition. 400 Commonwealth Drive, Warrendale, PA, United States: SAE International, 1989. http://dx.doi.org/10.4271/890927.

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