Gotowa bibliografia na temat „Metal-semiconductors Heterojunctions”

Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, which may be widely utilized in various optoelectronic device technology. This article discusses the application of diamond-based heterostructures and mainly writes about optoelectronic device fabrication, optoelectronic performance research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) device applications based on diamond non-metal oxide (AlN, GaN, Si and carbon-based semiconductor) heterojunction. The discussion in this paper will provide a new scheme for the improvement of high-temperature diamond-based optoelectronics.

We review recent strides in understanding and manipulating photoinduced charge transfer in heterojunctions between 2D transition metal dichalcogenides and other semiconductors, with implications for a broad array of energy applications.

Hetero-nanomaterials constructed by plasmonic metals and functional semiconductors show enormous potential in photocatalytic applications, such as in hydrogen production, CO2 reduction, and treatment of pollutants. Their photocatalytic performances can be better regulated through adjusting structure, composition, and components’ arrangement. Therefore, the reasonable design and synthesis of metal/semiconductor hetero-nanostructures is of vital significance. In this mini-review, we laconically summarize the recent progress in efficiently establishing metal/semiconductor nanomaterials for improved photocatalysis. The defined photocatalysts mainly include traditional binary hybrids, ternary multi-metals/semiconductor, and metal/multi-semiconductors heterojunctions. The underlying physical mechanism for the enhanced photocatalysis of the established photocatalysts is highlighted. In the end, a brief summary and possible future perspectives for further development in this field are demonstrated.

The generation of photocatalytic hydrogen via water splitting under light irradiation is attracting much attention as an alternative to solve such problems as global warming and to increase interest in clean energy. However, due to the low efficiency and selectivity of photocatalytic hydrogen production under solar energy, a major challenge persists to improve the performance of photocatalytic hydrogen production through water splitting. In recent years, graphitic carbon nitride (g-C3N4), a non-metal photocatalyst, has emerged as an attractive material for photocatalytic hydrogen production. However, the fast recombination of photoexcited electron–hole pairs limits the rate of hydrogen evolution and various methods such as modification, heterojunctions with semiconductors, and metal and non-metal doping have been applied to solve this problem. In this review, we cover the rational design of g-C3N4-based photocatalysts achieved using methods such as modification, metal and non-metal doping, and heterojunctions, and we summarize recent achievements in their application as hydrogen production photocatalysts. In addition, future research and prospects of hydrogen-producing photocatalysts are also reviewed.

Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanish with proper 2D metals (for example, H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions but also uncovers the great potential of 2D metals for device applications.

The use of nanostructured non-conventional semiconductors such as conjugated polymers and metal oxides (e.g. TiO2), opens promising perspectives towards a new generation of solar cells based on the concept of donor:acceptor bulk heterojunctions. In this concept donor material and acceptor material form interpenetrating networks allowing light absorption, charge transfer and charge transport throughout the entire bulk of the thin film. Since nanomorphology is of crucial importance for this type of solar cells, in this contribution the use of nanofibers in bulk heterojunction solar cells is explored in order to obtain highways for charge transport. We investigate in particular the use of P3AT (poly(3-alkylthiophene)) nanofibers and show that the polymer fraction aggregated into fibers can be easily controlled by temperature. We find an optimal efficiency at intermediate fiber fraction and show that it can be linked to the morphology of the active layer.

Defying the isotropic nature of traditional chemical etch, metal-assisted chemical etching (MacEtch) has allowed spatially defined anisotropic etching by using patterned metal catalyst films to locally enhance the etch rate of various semiconductors. Significant progress has been made on achieving unprecedented aspect ratio nanostructures using this facile approach, mostly in solution. However, the path to manufacturing scalability remains challenging because of the difficulties in controlling etch morphology (e.g., porosity and aggregation) and etch rate uniformity over a large area. Here, we report the first programmable vapor-phase MacEtch (VP-MacEtch) approach, with independent control of the etchant flow rates, injection and pulse time, and chamber pressure. In addition, another degree of freedom, light irradiation is integrated to allow photo-enhanced VP-MacEtch. Various silicon nanostructures are demonstrated with each of these parameters systematically varied synchronously or asynchronously, positioning MacEtch as a manufacturing technique for versatile arrays of three-dimensional silicon nanostructures. This work represents a critical step or a major milestone in the development of silicon MacEtch technology and also establishes the foundation for VP-MacEtch of compound semiconductors and related heterojunctions, for lasting impact on damage-free 3D electronic, photonic, quantum, and biomedical devices.

Transition metal dichalcogenides (TMDCs) can be used as optical energy conversion materials to catalyze the water splitting reaction. A good catalytical performance requires: (i) well-matched semiconductor bandgaps and water redox potential for fluent energy transfer; and (ii) optimal orientation of the water molecules at the interface for kinetically fast chemical reactions. Interactions at the solid–liquid interface can have an important impact on these two factors; most theoretical studies have employed semiconductor-in-vacuum models. In this work, we explored the interface formed by liquid water and different types of TMDCs monolayers (MoS2, WSe2, and their lateral heterojunctions), using a combined molecular dynamics (MD) and density functional theory (DFT) approach. The strong interactions between water and these semiconductors confined the adsorbed water layer presenting structural patterns, with the water molecules well connected to the bulk water through the hydrogen bonding network. Structural fluctuations in the metal chalcogenide bonds during the MD simulations resulted in a 0.2 eV reduction of the band gap of the TMDCs. The results suggest that when designing new TMDC semiconductors, both the surface hydrophobicity and the variation of the bandgaps originating from the water-semiconductor interface, need to be considered.

Highly sensitive uncooled mid-wave infrared (MWIR) photodetectors have a very wide range of applications ranging from the sensor and image to communications. Traditional MWIR detection semiconductors require liquid nitrogen cooling to depress dark current, which impeded the wide applications of devices. Here, we report a metal electrode-enhanced double parallel BP/InSe/BP van der Waals heterostructure uncooled MWIR photodetector. The device exhibits ultrahigh light on/off ratio of 108 and a very low dark current of 0.16 pA. The competitive performance includes high photoresponsivity ( R) of 27.8 A W−1, excellent specific detectivity ( D*) of 3.8 × 1012 cm Hz1/2 W−1, very low noise equivalent power (NEP) of 3.7 × 10−16 W Hz−1/2, and fast response speed of τr = 3.5 μs and τd = 2.4 μs in the visible range. Notably, in the MWIR range, the light on/off ratio of ∼104, NEP of 3.0 × 10−13 W Hz−1/2, and D* of 4.8 × 109 cm Hz1/2 W−1 was realized. The work sheds light on developing a high-performance uncooled MWIR photodetector by designed band alignment.

The objective of this work is to investigate the performance of SiGe HBTs and scaled CMOS devices in extreme environments. In this work, the inverse mode operation of SiGe HBTs is investigated as a potential solution to the vulnerability of SiGe HBTs to single event effects. The performance limitations of SiGe HBTs operating in inverse mode are investigated through an examination of the effects of scaling on inverse mode performance and optimization schemes for inverse mode performance enhancements are discussed and demonstrated. In addition the performance of scaled MOSFETs, that constitute the digital backbone of any BiCMOS technology, is investigated under radiation exposure and cryogenic temperatures. Extreme environments and their effects on semiconductor devices are introduced in Chapter 1. The immunity of 90nm MOSFETs to total ionizing dose damage under proton radiation is demonstrated. Inverse mode operation of SiGe HBTs is introduced in Chapter 2 as a potential radiation hard solution by design. The effect of scaling on inverse mode performance of SiGe HBTs is investigated and the performance limitations in inverse mode are identified. Optimization schemes for improving inverse mode performance of SiGe HBTs are discussed in Chapter 3. Inverse mode performance enhancement is demonstrated experimentally in optimized device structures manufactured in a commercial third generation SiGe HBT BiCMOS platform. Further, a cascode device structure, the combines the radiation immunity of an inverse mode structure with the performance of a forward mode common emitter device is XIV discussed. Finally, idealized doping profiles for inverse mode performance enhancement is discussed through TCAD simulations. The cryogenic performance of inverse mode SiGe HBTs are discussed in Chapter 4. A novel base current behavior at cryogenic temperature is identified and its effect on the inverse mode performance is discussed. Matching performance of a 90nm bulk CMOS technology at cryogenic temperatures is investigated experimentally and through TCAD simulations in Chapter 5. The effect of various process parameters on the temperature sensitivity of threshold voltage mismatch is discussed. The potential increase of mismatch in subthreshold MOSFETs operating in cryogenic temperatures due to hot carrier effects is also investigated.

This work represents several years' research into the field of radiation hardening by design. The unique characteristics of a SiGe HBT, described in Chapter 1, make it ideally suitable for use in extreme environment applications. Chapter 2 describes the total ionizing dose effects experienced by a SiGe HBT, particularly those experienced on an Earth-orbital or lunar-surface mission. In addition, the effects of total dose are evaluated on passive devices. As opposed to the TID-hardness of SiGe transistors, a clear vulnerability to single-event effects does exist. This field is divided into three chapters. First, the very nature of single-event transients present in SiGe HBTs is explored in Chapter 3 using a heavy-ion microbeam with both bulk and SOI platforms [31]. Then, in Chapter 4, a new device-level SEU-hardening technique is presented along with circuit-design techniques necessarily for its implementation. In Chapter 5, the circuit-level radiation-hardening techniques necessarily to mitigate the effects shown in Chapter 3 are developed and tested [32]. Finally, in Chapter 6, the performance of the SiGe HBT in a cryogenic testing environment is characterized to understand how the widely-varying temperatures of outer space may affect device performance. Ultimately, the built-in performance, TID-tolerance, and now-developing SEU-hardness of the SiGe HBT make a compelling case for extreme environment electronics. The low-cost, high-yield, and maturity of Si manufacturing combine with modern bandgap engineering and modern CMOS to produce a high-quality, high-performance BiCMOS platform suitable for space-borne systems.

Organic photovoltaics have shown much promise as an alternative photovoltaic technology for application in low-cost, large-scale and flexible solar cells. The application of metal oxides in organic solar cells (OSCs) and the impact of the properties of metal oxide/organic hetero-interfaces on cell performance have attracted a lot of attention. The metal oxide/organic interfaces have a crucial impact on interfacial charge transfer, charge collection and the overall device performance. This thesis is aimed at clarifying the principal interfacial phenomena occurring at the metal oxide/organic hetero-interfaces as well as effective engineering of those interfacial properties in OSCs. Photo-generated electrons and holes undergo different recombination processes, e.g., bimolecular recombination and trap-assisted recombination, before being collected by the electrodes in OSCs. Light intensity-dependent current densityvoltage (JV) characteristics of OSCs were analyzed to study the effect of recombination on charge collection efficiency. Effect of metal oxide/organic hetero-interfaces on charge transfers at organic/electrode interface was analyzed using transient photocurrent (TPC) measurements. Light intensity-dependent JV characteristics and TPC characteristics were applied to explore the charge recombination dynamics in OSCs with a metal oxide interlayer. This project concentrated on an in-depth investigation of the physics and the interface phenomena such as interfacial exciton dissociation, charge recombination processes, charge collection and interface engineering for high performing OSCs. The fundamentals about light intensity-dependent J-V characteristics for OSCs were summarized. The relationship between the charge recombination dynamics and light intensity-dependent J-V characteristics in OSCs were developed. Light intensity-dependent JSC, VOC and FF in OSCs made with different bulk-heterojunction (BHJ) systems of PTB7:PC70BM, PTB7-Th:PC70BM and PNB4:PC70BM were investigated. It is found that bimolecular recombination is the most prominent factor limiting the performance of OSCs. For freshly made OSCs fabricated based on the commercial polymers, e.g. PTB7 & PTB7-Th, and the new polymer PNB4 synthesized in-house, the trap-assisted charge recombination process in the BHJ active layer plays a relatively small role. This suggests that reducing the bimolecular recombination in OSCs through selecting proper materials and device structures is crucial for enhancing the power conversion efficiency (PCE) of OCSs. In this work, device structures which enable reducing bimolecular recombination in OSCs were investigated. The effect of ZnO interlayer at the interface between BHJ and Al cathode on the performance of PTB7:PC71BM based OSCs was studied by a combination of theoretical simulation and experimental characterization techniques, e.g., using light intensity-dependent JV characteristic and TPC measurements etc. It shows that ZnO interlayer has a profound effect on the performance of the PTB7:PC70BM-based OSCs, although it does not have a significant influence on the maximum absorptance in the active layer. The origin of the improvement in the cell performance is associated with the efficient charge collection due to the favorable exciton dissociation at the electrode/active layer interface. It is shown that the presence of the ZnO interlayer allows using a thinner active layer without moderating the absorption in the optically optimized control OSCs without the ZnO interlayer. OSCs with a ~10 nm thick ZnO interlayer are found to be favorable for the efficient charge collection, and thereby improving the cell performance. The TPC measurements also reveal that the dissociation of excitons at the metal/organic interface of regular OSCs hinders the electron collection. The unfavorable interfacial exciton dissociation can be removed by interposing a ZnO interlayer at the Al/organic interface, thus bimolecular recombination at the electrode/active layer interface can be reduced for improving the charge collection efficiency. PCE of the OSCs using ZnO interlayer was 6.5%, which is about 20% higher than a control cell (5.4%), having an identical device configuration without a ZnO interlayer. Solution-processed anode interlayer, a mixture of solution-processed MoOX and PEDOT:PSS, was adopted for application in inverted PTB7:PC71BM-based OSCs. The ratio of MoOX to PEDOT:PSS in the mixed solution was optimized for achieving the best cell performance. A PCE of 7.4% was obtained for OSCs with an optimal MoOX-PEDOT:PSS based interlayer, interposed between the BHJ active layer and Ag anode, which means 10% enhancement over the PCE of control cell made with an evaporated MoOX interlayer. Light intensity-dependent JV characteristics implied that the bimolecular recombination in OSCs with a MoOX-PEDOT:PSS interlayer was reduced. TPC measurements showed that the favorable exciton dissociation occurs at the organic/MoOX interface for the inverted OSCs. The favorable interfacial exciton dissociation generates an electrical field within a very small space near the interface, contributing significant additional photocurrent when the effective bias across the active layer in the OSCs is low, and thereby assisting in an efficient charge collection at the organic/electrode interface. In addition to the improvement in the cell performance, the solution-processed MoOX-PEDOT:PSS interlayer does not require a post-annealing treatment, which is beneficial for application in solution-processed tandem and flexible OSCs.

This thesis investigates the effects of low temperatures on Silicon Germanium (SiGe) Hterojunction Bipolar Transistors (HBT) BiCMOS technology. A comprehensive set of dc measurements were taken on first, second, third and fourth generation IBM SiGe technology over a range of temperatures (room temperature to 43K for first generation, and room temperature to 15K for the rest). This work is unique in the sense that this sort of comprehensive study of dc characteristics on four SiGe HBT technology generations over a wide range of temperatures has never been done before to the best of the authors knowledge.

This thesis evaluates the suitability of silicon-germanium technology for electronic systems intended for extreme environments, such as ambient temperatures outside of military specification (-55 degC to 125 degC) range and intense exposures to ionizing radiation. Silicon-germanium devices and circuits were characterized at cryogenic and high-temperatures (up to 300 degC) and exposed to ionizing radiation, providing empirical evidence that silicon-germanium is an excellent platform for terrestrial and space-based electronic applications.

Les procédés bipolaires semi-conducteurs complémentaires à oxyde de métal (BiCMOS) peuvent être considérés comme étant la solution la plus généralepour les produits RF car ils combinent la fabrication sophistiquée du CMOSavec la vitesse et les capacités de conduction des transistors bipolaires silicium germanium(SiGe) à hétérojonction (HBT). Les HBTs, réciproquement, sontles principaux concurrents pour combler partiellement l'écart de térahertzqui décrit la plage dans laquelle les fréquences générées par les transistors etles lasers ne se chevauchent pas (environ 0.3 THz à 30 THz). A_n d'évaluerles capacités de ces dispositifs futurs, une méthodologie de prévision fiable estsouhaitable. L'utilisation d'un ensemble hétérogène d'outils et de méthodes desimulations permet d'atteindre successivement cet objectif et est avantageusepour la résolution des problèmes. Plusieurs domaines scientifiques sont combinés, tel que la technologie de conception assistée par ordinateur (TCAO),la modélisation compacte et l'extraction des paramètres.Afin de créer une base pour l'environnement de simulation et d'améliorerla confirmabilité pour les lecteurs, les modèles de matériaux utilisés pour lesapproches hydrodynamiques et de diffusion par conduction sont introduits dèsle début de la thèse. Les modèles physiques sont principalement fondés surdes données de la littérature basées sur simulations Monte Carlo (MC) ou dessimulations déterministes de l'équation de transport de Boltzmann (BTE).Néanmoins, le module de TCAO doit être aussi étalonné sur les données demesure pour une prévision fiable des performances des HBTs. L'approchecorrespondante d'étalonnage est basée sur les mesures d'une technologie depointe de HBT SiGe pour laquelle un ensemble de paramètres spécifiques àla technologie du modèle compact HICUM/L2 est extrait pour les versionsdu transistor à haute vitesse, moyenne et haute tension. En s'aidant de cesrésultats, les caractéristiques du transistor unidimensionnel qui sont généréesservent de référence pour le profil de dopage et l'étalonnage du modèle. Enélaborant des comparaisons entre les données de références basées sur les mesureset les simulations, la thèse fait progresser l'état actuel des prévisionsbasées sur la technologie CAO et démontre la faisabilité de l'approche.Enfin, une technologie future de 28nm performante est prédite en appliquantla méthodologie hétérogène. Sur la base des résultats de TCAO, leslimites de la technologie sont soulignées
Bipolar complementary metal-oxide-semiconductor (BiCMOS) processescan be considered as the most general solution for RF products, as theycombine the mature manufacturing tools of CMOS with the speed and drivecapabilities of silicon-germanium (SiGe) heterojunction bipolar transistors(HBTs). HBTs in turn are major contenders for partially filling the terahertzgap, which describes the range in which the frequencies generated bytransistors and lasers do not overlap (approximately 0.3THz to 30 THz). Toevaluate the capabilities of such future devices, a reliable prediction methodologyis desirable. Using a heterogeneous set of simulation tools and approachesallows to achieve this goal successively and is beneficial for troubleshooting.Various scientific fields are combined, such as technology computer-aided design(TCAD), compact modeling and parameter extraction.To create a foundation for the simulation environment and to ensure reproducibility,the used material models of the hydrodynamic and drift-diffusionapproaches are introduced in the beginning of this thesis. The physical modelsare mainly based on literature data of Monte Carlo (MC) or deterministicsimulations of the Boltzmann transport equation (BTE). However, the TCADdeck must be calibrated on measurement data too for a reliable performanceprediction of HBTs. The corresponding calibration approach is based onmeasurements of an advanced SiGe HBT technology for which a technology specific parameter set of the HICUM/L2 compact model is extracted for thehigh-speed, medium-voltage and high-voltage transistor versions. With thehelp of the results, one-dimensional transistor characteristics are generatedthat serve as reference for the doping profile and model calibration. By performingelaborate comparisons between measurement-based reference dataand simulations, the thesis advances the state-of-the-art of TCAD-based predictionsand proofs the feasibility of the approach.Finally, the performance of a future technology in 28nm is predicted byapplying the heterogeneous methodology. On the basis of the TCAD results,bottlenecks of the technology are identified
Bipolare komplementäre Metall-Oxid-Halbleiter (BiCMOS) Prozesse bietenhervorragende Rahmenbedingungen um Hochfrequenzanwendungen zurealisieren, da sie die fortschrittliche Fertigungstechnik von CMOS mit derGeschwindigkeit und Treiberleistung von Silizium-Germanium (SiGe) Heterostruktur-Bipolartransistoren (HBTs) verknüpfen. Zudem sind HBTs bedeutendeWettbewerber für die teilweise Überbrückung der Terahertz-Lücke, derFrequenzbereich zwischen Transistoren (< 0.3 THz) und Lasern (> 30 THz).Um die Leistungsfähigkeit solcher zukünftigen Bauelemente zu bewerten, isteine zuverlässige Methodologie zur Vorhersage notwendig. Die Verwendungeiner heterogenen Zusammenstellung von Simulationstools und Lösungsansätzenerlaubt es dieses Ziel schrittweise zu erreichen und erleichtert die Fehler-_ndung. Verschiedene wissenschaftliche Bereiche werden kombiniert, wie zumBeispiel der rechnergestützte Entwurf für Technologie (TCAD), die Kompaktmodellierungund Parameterextraktion.Die verwendeten Modelle des hydrodynamischen Simulationsansatzes werdenzu Beginn der Arbeit vorgestellt, um die Simulationseinstellung zu erläuternund somit die Nachvollziehbarkeit für den Leser zu verbessern. Die physikalischenModelle basieren hauptsächlich auf Literaturdaten von Monte Carlo(MC) oder deterministischen Simulationen der Boltzmann-Transportgleichung(BTE). Für eine zuverlässige Vorhersage der Eigenschaften von HBTs muss dieTCAD Kon_guration jedoch zusätzlich auf der Grundlage von Messdaten kalibriertwerden. Der zugehörige Ansatz zur Kalibrierung beruht auf Messungeneiner fortschrittlichen SiGe HBT Technologie, für welche ein technologiespezifischer HICUM/L2 Parametersatz für die high-speed, medium-voltage undhigh-voltage Transistoren extrahiert wird. Mit diesen Ergebnissen werden eindimensionaleTransistorcharakteristiken generiert, die als Referenzdaten fürdie Kalibrierung von Dotierungspro_len und physikalischer Modelle genutztwerden. Der ausführliche Vergleich dieser Referenz- und Messdaten mit Simulationengeht über den Stand der Technik TCAD-basierender Vorhersagenhinaus und weist die Machbarkeit des heterogenen Ansatzes nach.Schlieÿlich wird die Leistungsfähigkeit einer zukünftigen Technologie in28nm unter Anwendung der heterogenen Methodik vorhergesagt. Anhand derTCAD Ergebnisse wird auf Engpässe der Technologie hingewiesen

Heterojunctions were generated between tungsten trioxide and tetraphenyl porphyrin with reduced graphene oxide or exfoliated graphite support for mineralisation of acid blue 25 dye under visible light radiation. Moreover, degradation of pharmaceuticals was conducted using p-n heterojunctions between WO3 and Co3O4 and a direct Z-scheme heterojunction between BiOI and Co3O4 prepared using in-situ method and solvothermal self-assembly method respectively. The synthesized materials were characterised using Raman, FTIR, SEM/EDS, TEM, XRD, TGA, BET, UV-Vis and PL techniques. UV-Vis, TOC and HPLC-QTOF-MS were used to study the degradation efficiency and pathway. Scavenger trapping experiments were conducted to propose the charge transfer mechanisms. The highest degradation efficiency (99 %) was achieved for the dye and the pharmaceuticals using visible light. The mineralisation ability of the fabricated nanomaterials was pH dependent with acidic conditions favouring the removal of the dye (pH 5) while alkaline conditions favoured the mineralisation of pharmaceuticals (pH 10 – 11).
Civil and Chemical Engineering

This article describes the applications of Si/SiGe heterostructures in nanoelectronics. Silicon-germanium is now a mature field with heterojunction bipolar transistors (HBTs) and complementary metal oxide semiconductors (CMOS) products in the market place. In the research field there are many areas where Si/SiGe heterostructures are being used to bandgap engineer nanoelectronic devices resulting in significant improvements in device performance. A number of these areas have good potential for eventually reaching production, while thereare also many that allow fundamental research on the physics of materials anddevices. This article begins with an overview of the growth of silicon-germanium alloys, followed by a discussion of the effect of strain on the band structure and properties of Si/SiGe devices. It then considers two mainstream nanoelectronic applications of Si/SiGe heterostructures, namely HBTs and CMOS. It also looks at resonant tunnelling diodes and SiGe quantum cascade emitters.

The wide energy gap II-VI compounds semiconductors, such as ZnSe, ZnS, MnSe, CdSe, and their ternary and quaternary alloys, are particularly suitable for the realization of short wavelength optoelectronic devices. These materials have been found to exhibit excellent luminescent properties as demonstrated by photoluminescent spectra [1] and the successful operation of photopumped lasers [2]. Recently, Haase et al[3] reported p-n heterojunction injection laser operating at cryogenic temperatures. Currently, several research groups are investigating p-type doping of ZnSe using MBE, MOCVD and CBE growth techniques. However, compensation at high nitrogen level (>1018 cm-3) still remains a problem[4]. While the effort in optimizing p-n heterojunctions to obtain room temperature lasers is being pursued intensely, an alternate approach is the use of MIS structures to obtain injection luminescence[5,6]. This paper discusses modal analysis of p-n double heterojunction and MIS laser heterostructures. In particular, ZnSe-ZnSSe, ZnSe-ZnCdSe structures are analyzed. Numerical computations of field intensities, confinement factors r and the threshold current densities JTH are presented. Experimental data of luminescence spectra in Au-SiO2-ZnSe MIS devices is also presented.