Rozprawy doktorskie na temat „Metal oxide semiconductors”
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Peleckis, Germanas. "Studies on diluted oxide magnetic semiconductors for spin electronic applications". Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20070821.145447/index.html.
Pełny tekst źródłaWu, Kehuey. "Strain effects on the valence band of silicon piezoresistance in p-type silicon and mobility enhancement in strained silicon pMOSFET /". [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0008390.
Pełny tekst źródłaAl-Ahmadi, Ahmad Aziz. "Complementary orthogonal stacked metal oxide semiconductor a novel nanoscale complementary metal oxide semiconductor architecture /". Ohio : Ohio University, 2006. http://www.ohiolink.edu/etd/view.cgi?ohiou1147134449.
Pełny tekst źródłaLiu, Kou-chen. "Si1-xGex/Si vertical MOSFETs and sidewall strained Si devices : design and fabrication /". Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.
Pełny tekst źródłaHöhr, Timm. "Quantum-mechanical modeling of transport parameters for MOS devices /". Konstanz : Hartnung-Gorre, 2006. http://www.loc.gov/catdir/toc/fy0707/2007358987.html.
Pełny tekst źródłaSummary in German and English, text in English. Includes bibliographical references (p. 123-132).
Gurcan, Zeki B. "0.18 [mu]m high performance CMOS process optimization for manufacturability /". Online version of thesis, 2005. http://hdl.handle.net/1850/5197.
Pełny tekst źródłaWu, Ting. "Design of terabits/s CMOS crossbar switch chip /". View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20WU.
Pełny tekst źródłaIncludes bibliographical references (leaves 100-105). Also available in electronic version. Access restricted to campus users.
Wu, Xu Sheng. "Three dimensional multi-gates devices and circuits fabrication, characterization, and modeling /". View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20WUX.
Pełny tekst źródłaModzelewski, Kenneth Paul. "DC parameter extraction technique for independent double gate MOSFETs a thesis presented to the faculty of the Graduate School, Tennessee Technological University /". Click to access online, 2009. http://proquest.umi.com/pqdweb?index=11&did=1759989211&SrchMode=1&sid=1&Fmt=6&VInst=PROD&VType=PQD&RQT=309&VName=PQD&TS=1250600320&clientId=28564.
Pełny tekst źródłaTrivedi, Vishal P. "Physics and design of nonclassical nanoscale CMOS devices with ultra-thin bodies". [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0009860.
Pełny tekst źródłaKhan, Shamsul Arefin. "Deep sub-micron MOS transistor design and manufacturing sensitivity analysis /". Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.
Pełny tekst źródłaHuang, Amy. "On the plasma induced degradation of organosilicate glass (OSG) as an interlevel dielectric for sub 90 nm CMOS /". Online version of thesis, 2008. http://hdl.handle.net/1850/5899.
Pełny tekst źródłaYoon, Kwang Sub. "A precision analog small-signal model for submicron MOSFET devices". Diss., Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/14935.
Pełny tekst źródłaShelley, Valerie Anderson 1957. "Validity of the Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS". Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276801.
Pełny tekst źródłaPesci, Federico M. "Metal oxide semiconductors employed as photocatalysts during water splitting". Thesis, Imperial College London, 2014. http://hdl.handle.net/10044/1/24964.
Pełny tekst źródłaWaghe, Anil Bhalchandra. "Synthesis of Porous Monoclinic Tungsten Oxides and Their Application in Sensors". Fogler Library, University of Maine, 2003. http://www.library.umaine.edu/theses/pdf/WagheAB2003.pdf.
Pełny tekst źródłaÖzdağ, Pınar Güneş Mehmet. "Capacitance-voltage spectroscopy in metal-tantalum pentoxide (Ta-O)-silicon mos capacitors/". [s.l.]: [s.n.], 2005. http://library.iyte.edu.tr/tezler/master/fizik/T000397.pdf.
Pełny tekst źródłaKeywords: Capacitance-voltage spectroscopy, high dielectric constant insulators, tantalum pentoxide. Includes bibliographical references (leaves 92-97)
Randell, Heather Eve. "Applications of stress from boron doping and other challenges in silicon technology". [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0010292.
Pełny tekst źródłaChan, Wan Tim. "CMOS-compatible zero-mask one time programmable (OTP) memory design /". View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20CHANW.
Pełny tekst źródłaDuffy, Christopher James. "Modeling hot-electron injection and impact ionization in pFET's". Thesis, Georgia Institute of Technology, 2001. http://hdl.handle.net/1853/14796.
Pełny tekst źródłaWang, Haihong. "Advanced transport models development for deep submicron low power CMOS device design /". Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.
Pełny tekst źródłaPUZZOVIO, Delia. "Surface interaction mechanisms in metal-oxide semiconductors for alkane detection". Doctoral thesis, Università degli studi di Ferrara, 2009. http://hdl.handle.net/11392/2389140.
Pełny tekst źródłaBowen, Andrew. "Anodisation and study of oxide films formed on zirconium". Thesis, University of Nottingham, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.328407.
Pełny tekst źródłaYellai, Kashyap Williams John R. "Post ion-implantation surface planarization process for 4H-SiC wafers using carbon encapsulation technique". Auburn, Ala., 2006. http://repo.lib.auburn.edu/2006%20Fall/Theses/YELLAI_KASHYAP_13.pdf.
Pełny tekst źródłaShum, Roger Chi Fai Carleton University Dissertation Engineering Electrical. "A timing macro model for performance optimization of CMOS logic circuits". Ottawa, 1992.
Znajdź pełny tekst źródłaHildreth, Scott A. "Statistical SPICE parameter extraction for an N-Well CMOS process /". Online version of thesis, 1995. http://hdl.handle.net/1850/12177.
Pełny tekst źródłaCsutak, Sebastian Marius. "Optical receivers and photodetectors in 130nm CMOS technology". Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3036588.
Pełny tekst źródłaVega, Reinaldo A. "Schottky field effect transistors and Schottky CMOS circuitry /". Online version of thesis, 2006. http://hdl.handle.net/1850/5179.
Pełny tekst źródłaBialuschewski, Danny [Verfasser]. "Laser-assisted Modification of Metals and Metal Oxide Semiconductors as Photoactive Materials / Danny Bialuschewski". München : Verlag Dr. Hut, 2020. http://d-nb.info/1219477699/34.
Pełny tekst źródłaAli, Danish. "Coulomb blockade in silicon-on-insulator". Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.321368.
Pełny tekst źródłaCarruthers, Colin. "Low noise operation in deep depletion mode MOS transistors". Thesis, University of Edinburgh, 1989. http://hdl.handle.net/1842/10866.
Pełny tekst źródłaPrice, David T. "N-Well CMOS process integration /". Online version of thesis, 1992. http://hdl.handle.net/1850/11261.
Pełny tekst źródłaJohn, Soji. "UHVCVD growth of Si₁-x-yGexCy epitaxial materials and application in heterostructure MOS devices /". Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.
Pełny tekst źródłaUpadhyaya, Parag. "High IIP2 CMOS doubly balanced quadrature sub-harmonic mixer for 5 GHz direct conversion receiver". Online access for everyone, 2005. http://www.dissertations.wsu.edu/Thesis/Spring2005/p%5Fupadhyaya%5F050505.pdf.
Pełny tekst źródłaZeng, Xu, i 曾旭. "Electrical reliability of N-Mos devices with N2O-based oxides as gate dielectrics". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1996. http://hub.hku.hk/bib/B31235475.
Pełny tekst źródłaZeng, Xu. "Electrical reliability of N-Mos devices with N2O-based oxides as gate dielectrics /". Hong Kong : University of Hong Kong, 1996. http://sunzi.lib.hku.hk/hkuto/record.jsp?B1966980X.
Pełny tekst źródłaTurner, Gary Chandler. "Zinc Oxide MESFET Transistors". Thesis, University of Canterbury. Electrical and Computer Engineering, 2009. http://hdl.handle.net/10092/3439.
Pełny tekst źródłaDu, Xiaohua. "Understanding and optimization of gas sensors based on metal oxide semiconductors". Connect to online resource, 2007. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3284441.
Pełny tekst źródłaBeglitis, N. "First-principles studies of surface defects of model metal-oxide semiconductors". Thesis, University College London (University of London), 2011. http://discovery.ucl.ac.uk/1324515/.
Pełny tekst źródłaAHMED, ABDELKADER ABDELHAMID MOHAMED. "Metal oxide semiconductors as humidity and NOx sensors for environmental monitoring". Doctoral thesis, Politecnico di Torino, 2014. http://hdl.handle.net/11583/2528295.
Pełny tekst źródłaGajera, Dipesh. "Process costing of microchip". Morgantown, W. Va. : [West Virginia University Libraries], 2006. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=4726.
Pełny tekst źródłaTitle from document title page. Document formatted into pages; contains vii, 92 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 85-91).
Wu, Zhenghui. "Impact of metal oxide/bulk-heterojunction interface on performance of organic solar cells". HKBU Institutional Repository, 2015. https://repository.hkbu.edu.hk/etd_oa/159.
Pełny tekst źródłaChun, Young Tea. "Charge transfer characteristic of zinc oxide nanowire devices and their applications". Thesis, University of Cambridge, 2015. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708978.
Pełny tekst źródłaOuyang, Qiqing Christine. "Physical model enhancement and exploration of bandgap engineering in novel sub-100nm pMOSFETs /". Digital version:, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p9992880.
Pełny tekst źródłaHaasmann, Daniel Erwin. "Active Defects in 4H–SiC MOS Devices". Thesis, Griffith University, 2015. http://hdl.handle.net/10072/367037.
Pełny tekst źródłaThesis (PhD Doctorate)
Doctor of Philosophy (PhD)
Griffith School of Engineering
Science, Environment, Engineering and Technology
Full Text
李加碧 i Stella Li. "Interface state generation induced by Fowler-Nordheim tunneling in mosdevices". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1999. http://hub.hku.hk/bib/B31221403.
Pełny tekst źródłaCorrell, Jeffrey. "The design and implementation of an 8 bit CMOS microprocessor /". Online version of thesis, 1992. http://hdl.handle.net/1850/11649.
Pełny tekst źródłaBachelu, Carol R. Carleton University Dissertation Engineering Electrical. "A Topological single-layer routing algorithm and its application to leaf cell synthesis". Ottawa, 1992.
Znajdź pełny tekst źródłaWemple, Ivan L. "Parasitic substrate modeling for monolithic mixed analog/digital circuit design and verification /". Thesis, Connect to this title online; UW restricted, 1996. http://hdl.handle.net/1773/5944.
Pełny tekst źródłaLi, Stella. "Interface state generation induced by Fowler-Nordheim tunneling in mos devices /". Hong Kong : University of Hong Kong, 1999. http://sunzi.lib.hku.hk/hkuto/record.jsp?B20566487.
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