Artykuły w czasopismach na temat „Metal-Insulator Transition devices”
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Lee, D., B. Chung, Y. Shi, G. Y. Kim, N. Campbell, F. Xue, K. Song i in. "Isostructural metal-insulator transition in VO2". Science 362, nr 6418 (29.11.2018): 1037–40. http://dx.doi.org/10.1126/science.aam9189.
Pełny tekst źródłaLi, Dasheng, Jonathan M. Goodwill, James A. Bain i Marek Skowronski. "Scaling behavior of oxide-based electrothermal threshold switching devices". Nanoscale 9, nr 37 (2017): 14139–48. http://dx.doi.org/10.1039/c7nr03865h.
Pełny tekst źródłaWang, Qi, Kai Liang Zhang, Fang Wang, Kai Song i Zhi Xiang Hu. "Investigation on the Electric-Field-Induced Metal-Insulator Transition in VoX-Based Devices". Applied Mechanics and Materials 130-134 (październik 2011): 1–4. http://dx.doi.org/10.4028/www.scientific.net/amm.130-134.1.
Pełny tekst źródłaPolak, Paweł, Jan Jamroz i Tomasz K. Pietrzak. "Observation of Metal–Insulator Transition (MIT) in Vanadium Oxides V2O3 and VO2 in XRD, DSC and DC Experiments". Crystals 13, nr 9 (23.08.2023): 1299. http://dx.doi.org/10.3390/cryst13091299.
Pełny tekst źródłaCheng, Shaobo, Min-Han Lee, Richard Tran, Yin Shi, Xing Li, Henry Navarro, Coline Adda i in. "Inherent stochasticity during insulator–metal transition in VO2". Proceedings of the National Academy of Sciences 118, nr 37 (7.09.2021): e2105895118. http://dx.doi.org/10.1073/pnas.2105895118.
Pełny tekst źródłaHong, Woong-Ki, SeungNam Cha, Jung Inn Sohn i Jong Min Kim. "Metal-Insulator Phase Transition in Quasi-One-Dimensional VO2Structures". Journal of Nanomaterials 2015 (2015): 1–15. http://dx.doi.org/10.1155/2015/538954.
Pełny tekst źródłaWei, Na, Xiang Ding, Shifan Gao, Wenhao Wu i Yi Zhao. "HfOx/Ge RRAM with High ON/OFF Ratio and Good Endurance". Electronics 11, nr 22 (20.11.2022): 3820. http://dx.doi.org/10.3390/electronics11223820.
Pełny tekst źródłaHuang, Tiantian, Rui Zhang, Lepeng Zhang, Peiran Xu, Yunkai Shao, Wanli Yang, Zhimin Chen, Xin Chen i Ning Dai. "Energy-adaptive resistive switching with controllable thresholds in insulator–metal transition". RSC Advances 12, nr 55 (2022): 35579–86. http://dx.doi.org/10.1039/d2ra06866d.
Pełny tekst źródłaWeidemann, Sebastian, Mark Kremer, Stefano Longhi i Alexander Szameit. "Topological triple phase transition in non-Hermitian Floquet quasicrystals". Nature 601, nr 7893 (19.01.2022): 354–59. http://dx.doi.org/10.1038/s41586-021-04253-0.
Pełny tekst źródłaHeo, Jinseong, Heejeong Jeong, Yeonchoo Cho, Jaeho Lee, Kiyoung Lee, Seunggeol Nam, Eun-Kyu Lee i in. "Reconfigurable van der Waals Heterostructured Devices with Metal–Insulator Transition". Nano Letters 16, nr 11 (5.10.2016): 6746–54. http://dx.doi.org/10.1021/acs.nanolett.6b02199.
Pełny tekst źródłaMcGee, Ryan, Ankur Goswami, Rosmi Abraham, Syed Bukhari i Thomas Thundat. "Phase transformation induced modulation of the resonance frequency of VO2/tio2 coated microcantilevers". MRS Advances 3, nr 6-7 (2018): 359–64. http://dx.doi.org/10.1557/adv.2018.140.
Pełny tekst źródłaCalhoun, Seth, Rachel Evans, Cameron Nickle, Isaiah O. Oladeji, Justin Cleary, Evan M. Smith, Sayan Chandra, Debashis Chanda i Robert E. Peale. "Vanadium Oxide Thin Film by Aqueous Spray Deposition". MRS Advances 3, nr 45-46 (2018): 2777–82. http://dx.doi.org/10.1557/adv.2018.512.
Pełny tekst źródłaMa, Chung T., Salinporn Kittiwatanakul, Apiprach Sittipongpittaya, Yuhan Wang, Md Golam Morshed, Avik W. Ghosh i S. Joseph Poon. "Phase Change-Induced Magnetic Switching through Metal–Insulator Transition in VO2/TbFeCo Films". Nanomaterials 13, nr 21 (27.10.2023): 2848. http://dx.doi.org/10.3390/nano13212848.
Pełny tekst źródłaWalls, Brian, Oisín Murtagh, Sergey I. Bozhko, Andrei Ionov, Andrey A. Mazilkin, Daragh Mullarkey, Ainur Zhussupbekova i in. "VOx Phase Mixture of Reduced Single Crystalline V2O5: VO2 Resistive Switching". Materials 15, nr 21 (31.10.2022): 7652. http://dx.doi.org/10.3390/ma15217652.
Pełny tekst źródłaKwon, Osung, Hongmin Lee i Sungjun Kim. "Effects of Oxygen Flow Rate on Metal-to-Insulator Transition Characteristics in NbOx-Based Selectors". Materials 15, nr 23 (1.12.2022): 8575. http://dx.doi.org/10.3390/ma15238575.
Pełny tekst źródłaDruzhinin, Anatoly, Igor Ostrovskii, Yuriy Khoverko i Sergij Yatsukhnenko. "Magnetic Properties of Doped Si<B,Ni> Whiskers for Spintronics". Journal of Nano Research 39 (luty 2016): 43–54. http://dx.doi.org/10.4028/www.scientific.net/jnanor.39.43.
Pełny tekst źródłaXu, Zhen, Ayrton A. Bernussi i Zhaoyang Fan. "Voltage Pulse Driven VO2 Volatile Resistive Transition Devices as Leaky Integrate-and-Fire Artificial Neurons". Electronics 11, nr 4 (9.02.2022): 516. http://dx.doi.org/10.3390/electronics11040516.
Pełny tekst źródłaParihar, Abhinav, Nikhil Shukla, Matthew Jerry, Suman Datta i Arijit Raychowdhury. "Computing with dynamical systems based on insulator-metal-transition oscillators". Nanophotonics 6, nr 3 (19.04.2017): 601–11. http://dx.doi.org/10.1515/nanoph-2016-0144.
Pełny tekst źródłaLu, Chang, Qingjian Lu, Min Gao i Yuan Lin. "Dynamic Manipulation of THz Waves Enabled by Phase-Transition VO2 Thin Film". Nanomaterials 11, nr 1 (6.01.2021): 114. http://dx.doi.org/10.3390/nano11010114.
Pełny tekst źródłaGim, Hyeongyu, i Kootak Hong. "Nonvolatile Control of Metal-Insulator Transition in VO2 and Its Applications". Ceramist 26, nr 1 (31.03.2023): 3–16. http://dx.doi.org/10.31613/ceramist.2023.26.1.01.
Pełny tekst źródłaWei, Guodong, Xiaofei Fan, Yiang Xiong, Chen Lv, Shen Li i Xiaoyang Lin. "Highly disordered VO2 films: appearance of electronic glass transition and potential for device-level overheat protection". Applied Physics Express 15, nr 4 (1.04.2022): 043002. http://dx.doi.org/10.35848/1882-0786/ac605d.
Pełny tekst źródłaLin, Jianqiang, Shriram Ramanathan i Supratik Guha. "Electrically Driven Insulator–Metal Transition-Based Devices—Part II: Transient Characteristics". IEEE Transactions on Electron Devices 65, nr 9 (wrzesień 2018): 3989–95. http://dx.doi.org/10.1109/ted.2018.2859188.
Pełny tekst źródłaLi, Dasheng, Abhishek A. Sharma, Darshil K. Gala, Nikhil Shukla, Hanjong Paik, Suman Datta, Darrell G. Schlom, James A. Bain i Marek Skowronski. "Joule Heating-Induced Metal–Insulator Transition in Epitaxial VO2/TiO2 Devices". ACS Applied Materials & Interfaces 8, nr 20 (10.05.2016): 12908–14. http://dx.doi.org/10.1021/acsami.6b03501.
Pełny tekst źródłaMakino, Kotaro, Kosaku Kato, Yuta Saito, Paul Fons, Alexander V. Kolobov, Junji Tominaga, Takashi Nakano i Makoto Nakajima. "Terahertz spectroscopic characterization of Ge2Sb2Te5 phase change materials for photonics applications". Journal of Materials Chemistry C 7, nr 27 (2019): 8209–15. http://dx.doi.org/10.1039/c9tc01456j.
Pełny tekst źródłaGarcía, Héctor, Jonathan Boo, Guillermo Vinuesa, Óscar G. Ossorio, Benjamín Sahelices, Salvador Dueñas, Helena Castán, Mireia B. González i Francesca Campabadal. "Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices". Electronics 10, nr 22 (17.11.2021): 2816. http://dx.doi.org/10.3390/electronics10222816.
Pełny tekst źródłaDarwish, Mahmoud, i László Pohl. "Insulator Metal Transition-Based Selector in Crossbar Memory Arrays". Electronic Materials 5, nr 1 (23.02.2024): 17–29. http://dx.doi.org/10.3390/electronicmat5010002.
Pełny tekst źródłaLee, Su Yeon, Hyun Kyu Seo, Se Yeon Jeong i Min Kyu Yang. "Improved Electrical Characteristics of Field Effect Transistors with GeSeTe-Based Ovonic Threshold Switching Devices". Materials 16, nr 12 (11.06.2023): 4315. http://dx.doi.org/10.3390/ma16124315.
Pełny tekst źródłaCardarilli, Gian Carlo, Gaurav Mani Khanal, Luca Di Nunzio, Marco Re, Rocco Fazzolari i Raj Kumar. "Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device". Electronics 9, nr 2 (7.02.2020): 287. http://dx.doi.org/10.3390/electronics9020287.
Pełny tekst źródłaBasyooni, Mohamed A., Mawaheb Al-Dossari, Shrouk E. Zaki, Yasin Ramazan Eker, Mucahit Yilmaz i Mohamed Shaban. "Tuning the Metal–Insulator Transition Properties of VO2 Thin Films with the Synergetic Combination of Oxygen Vacancies, Strain Engineering, and Tungsten Doping". Nanomaterials 12, nr 9 (26.04.2022): 1470. http://dx.doi.org/10.3390/nano12091470.
Pełny tekst źródłaZhang, Shenli, Hien Vo i Giulia Galli. "Predicting the Onset of Metal–Insulator Transitions in Transition Metal Oxides—A First Step in Designing Neuromorphic Devices". Chemistry of Materials 33, nr 9 (20.04.2021): 3187–95. http://dx.doi.org/10.1021/acs.chemmater.1c00061.
Pełny tekst źródłaKim, Jihoon, Sungwook Choi, Seul-Lee Lee, Do Kyung Kim, Min Seok Kim, Bong-Jun Kim i Yong Wook Lee. "Reversible 100 mA Current Switching in a VO2/Al2O3-Based Two-Terminal Device Using Focused Far-Infrared Laser Pulses". Journal of Nanoscience and Nanotechnology 21, nr 3 (1.03.2021): 1862–68. http://dx.doi.org/10.1166/jnn.2021.18905.
Pełny tekst źródłaChen, Yiheng, Wen-Ti Guo, Zi-Si Chen, Suyun Wang i Jian-Min Zhang. "First-principles study on the heterostructure of twisted graphene/hexagonal boron nitride/graphene sandwich structure". Journal of Physics: Condensed Matter 34, nr 12 (7.01.2022): 125504. http://dx.doi.org/10.1088/1361-648x/ac45b5.
Pełny tekst źródłaShin, Jaemin, Tyafur Pathan, Guanyu Zhou i Christopher L. Hinkle. "(Invited) Bulk Traps in Layered 2D Gate Dielectrics". ECS Transactions 113, nr 2 (17.05.2024): 25–33. http://dx.doi.org/10.1149/11302.0025ecst.
Pełny tekst źródłaSampaio-Silva, Alessandre, Gervásio Protásio dos Santos Cavalcante, Carlos Alberto B. Silva i Jordan Del Nero. "Design of Molecular Positive Electronic Transition Device". Journal of Computational and Theoretical Nanoscience 18, nr 6 (1.06.2021): 1714–23. http://dx.doi.org/10.1166/jctn.2021.9729.
Pełny tekst źródłaSampaio-Silva, Alessandre, Gervásio Protásio dos Santos Cavalcante, Carlos Alberto B. Silva i Jordan Del Nero. "Design of Molecular Positive Electronic Transition Device". Journal of Computational and Theoretical Nanoscience 18, nr 6 (1.06.2021): 1714–23. http://dx.doi.org/10.1166/jctn.2021.9729.
Pełny tekst źródłaWang, Peng-Fei, Qianqian Hu, Tan Zheng, Yu Liu, Xiaofeng Xu i Jia-Lin Sun. "Optically Monitored Electric-Field-Induced Phase Transition in Vanadium Dioxide Crystal Film". Crystals 10, nr 9 (29.08.2020): 764. http://dx.doi.org/10.3390/cryst10090764.
Pełny tekst źródłaMizsei, János, Jyrki Lappalainen i Laszló Pohl. "Active thermal-electronic devices based on heat-sensitive metal-insulator-transition resistor elements". Sensors and Actuators A: Physical 267 (listopad 2017): 14–20. http://dx.doi.org/10.1016/j.sna.2017.09.052.
Pełny tekst źródłaHong, X., A. Posadas i C. H. Ahn. "Examining the screening limit of field effect devices via the metal-insulator transition". Applied Physics Letters 86, nr 14 (4.04.2005): 142501. http://dx.doi.org/10.1063/1.1897076.
Pełny tekst źródłaM, Arunachalam, Thamilmaran P i Sakthipandi K. "Effect of Sintering Temperature on Metal-Insulator Phase Transition in La1-xCaxMnO3 Perovskites". Frontiers in Advanced Materials Research 2, nr 1 (26.05.2020): 37–42. http://dx.doi.org/10.34256/famr2014.
Pełny tekst źródłaCheng, Shaobo, Min-Han Lee, Xing Li, Lorenzo Fratino, Federico Tesler, Myung-Geun Han, Javier del Valle i in. "Operando characterization of conductive filaments during resistive switching in Mott VO2". Proceedings of the National Academy of Sciences 118, nr 9 (23.02.2021): e2013676118. http://dx.doi.org/10.1073/pnas.2013676118.
Pełny tekst źródłaKlein, D. R., D. MacNeill, J. L. Lado, D. Soriano, E. Navarro-Moratalla, K. Watanabe, T. Taniguchi i in. "Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling". Science 360, nr 6394 (3.05.2018): 1218–22. http://dx.doi.org/10.1126/science.aar3617.
Pełny tekst źródłaRakshit, Abhishek, Karimul Islam, Anil Kumar Sinha i Supratic Chakraborty. "Insulator-to-metal transition of vanadium oxide-based metal-oxide-semiconductor devices at discrete measuring temperatures". Semiconductor Science and Technology 34, nr 5 (4.04.2019): 055001. http://dx.doi.org/10.1088/1361-6641/ab07d7.
Pełny tekst źródłaYu, Wenhao, Luqiu Chen, Yifei Liu, Bobo Tian, Qiuxiang Zhu i Chungang Duan. "Resistive switching polarity reversal due to ferroelectrically induced phase transition at BiFeO3/Ca0.96Ce0.04MnO3 heterostructures". Applied Physics Letters 122, nr 2 (9.01.2023): 022902. http://dx.doi.org/10.1063/5.0132819.
Pełny tekst źródłaNishikawa, K., S. Takakura, M. Nakatake, M. Yoshimura i Y. Watanabe. "Effect of surface modification by Ar+ ion irradiation on thermal hysteresis of VO2". Journal of Applied Physics 133, nr 4 (28.01.2023): 045305. http://dx.doi.org/10.1063/5.0132957.
Pełny tekst źródłaZhang, Yanqing, Weiming Xiong, Weijin Chen i Yue Zheng. "Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives". Nanomaterials 11, nr 2 (28.01.2021): 338. http://dx.doi.org/10.3390/nano11020338.
Pełny tekst źródłaRafiq, Fareenpoornima, Parthipan Govindsamy i Selvakumar Periyasamy. "Synthesis of a Novel Nanoparticle BaCoO2.6 through Sol-Gel Method and Elucidation of Its Structure and Electrical Properties". Journal of Nanomaterials 2022 (19.07.2022): 1–15. http://dx.doi.org/10.1155/2022/3877879.
Pełny tekst źródłaHa, Sieu D., B. Viswanath i Shriram Ramanathan. "Electrothermal actuation of metal-insulator transition in SmNiO3 thin film devices above room temperature". Journal of Applied Physics 111, nr 12 (15.06.2012): 124501. http://dx.doi.org/10.1063/1.4729490.
Pełny tekst źródłaYoon, Jongwon, Woong-Ki Hong, Yonghun Kim i Seung-Young Park. "Nanostructured Vanadium Dioxide Materials for Optical Sensing Applications". Sensors 23, nr 15 (27.07.2023): 6715. http://dx.doi.org/10.3390/s23156715.
Pełny tekst źródłaRai, R. K., R. B. Ray, G. C. Kaphle i O. P. Niraula. "A Continuous Time Quantum Monte Carlo as an Impurity Solver for Strongly Correlated System". Journal of Nepal Physical Society 7, nr 3 (31.12.2021): 14–26. http://dx.doi.org/10.3126/jnphyssoc.v7i3.42185.
Pełny tekst źródłaMoon, Jaehyun, Ju-Hun Lee, Kitae Kim, Junho Kim, Soohyung Park, Yeonjin Yi i Seung-Youl Kang. "Threshold Switching of ALD-NbOx Films for Neuromorphic Applications". ECS Meeting Abstracts MA2023-02, nr 30 (22.12.2023): 1558. http://dx.doi.org/10.1149/ma2023-02301558mtgabs.
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