Gotowe bibliografie tematyczne / Magnetic properties in spintronics

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Gotowa bibliografia na temat „Magnetic properties in spintronics”

Autor: Grafiati

Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "Magnetic properties in spintronics"

Srivani, Alla. "Spintronics and Optical Properties of Advanced Bio Materials". Radiology Research and Diagnostic Imaging 2, nr 1 (9.02.2023): 01–05. http://dx.doi.org/10.58489/2836-5127/009.

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Spintronics is an interactive combination of electronics and magnetics that has grown in popularity in the twenty-first century as nanotechnology has advanced. Spintronics is a new type of electronics that employs mutual control of magnetic and other physical signals, such as electrical and optical signals. Spin current has recently received a lot of attention as a basic idea in spintronics. Understanding spin current entails deciphering the mechanisms underlying the mutual control of diverse physical signals, which should lead to future advances in spintronics. The notion of spin current and its historical context are discussed first in this chapter, followed by a discussion of innovative materials for spintronics. Much attention is also dedicated to the physical phenomena that result from the coupling of spins.

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Ning, Weihua, Jinke Bao, Yuttapoom Puttisong, Fabrizo Moro, Libor Kobera, Seiya Shimono, Linqin Wang i in. "Magnetizing lead-free halide double perovskites". Science Advances 6, nr 45 (listopad 2020): eabb5381. http://dx.doi.org/10.1126/sciadv.abb5381.

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Spintronics holds great potential for next-generation high-speed and low–power consumption information technology. Recently, lead halide perovskites (LHPs), which have gained great success in optoelectronics, also show interesting magnetic properties. However, the spin-related properties in LHPs originate from the spin-orbit coupling of Pb, limiting further development of these materials in spintronics. Here, we demonstrate a new generation of halide perovskites, by alloying magnetic elements into optoelectronic double perovskites, which provide rich chemical and structural diversities to host different magnetic elements. In our iron-alloyed double perovskite, Cs2Ag(Bi:Fe)Br6, Fe3+ replaces Bi3+ and forms FeBr6 clusters that homogenously distribute throughout the double perovskite crystals. We observe a strong temperature-dependent magnetic response at temperatures below 30 K, which is tentatively attributed to a weak ferromagnetic or antiferromagnetic response from localized regions. We anticipate that this work will stimulate future efforts in exploring this simple yet efficient approach to develop new spintronic materials based on lead-free double perovskites.

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Kumar, Prashant, Ravi Kumar, Sanjeev Kumar, Manoj Kumar Khanna, Ravinder Kumar, Vinod Kumar i Akanksha Gupta. "Interacting with Futuristic Topological Quantum Materials: A Potential Candidate for Spintronics Devices". Magnetochemistry 9, nr 3 (2.03.2023): 73. http://dx.doi.org/10.3390/magnetochemistry9030073.

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Spintronics, also known as magneto-electronics or spin transport electronics, uses the magnetic moment of the electron due to intrinsic spin along with its electric charge. In the present review, the topological insulators (2D, 3D, and hydride) were discussed including the conducting edge of 2D topological insulators (TIs). Preparation methods of TIs along with fundamental properties, such as low power dissipation and spin polarized electrons, have been explored. Magnetic TIs have been extensively discussed and explained. Weyl phases, topological superconductors, and TIs are covered in this review. We have focused on creating novel spintronic gadgets based on TIs which have metallic topological exterior facades that are topologically defended and have an insulating bulk. In this review, topological phases are discussed as a potential candidate for novel quantum phenomena and new technological advances for fault-tolerant quantum computation in spintronics, low-power electronics, and as a host for Majorana fermions are elucidated. Room temperature stable magnetic skyrmions and anti-skyrmions in spintronics for next-generation memory/storage devices have been reported.

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Rehman, Mehtab Ur, Qun Wang i Yunfei Yu. "Electronic, Magnetic and Optical Properties of Double Perovskite Compounds: A First Principle Approach". Crystals 12, nr 11 (10.11.2022): 1597. http://dx.doi.org/10.3390/cryst12111597.

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Double perovskite compounds (DPCs) have gained much more attention due to their versatile character in the fields of electronics and spintronics. Using density functional theory (DFT) we investigated the electronic, magnetic and optical properties of DPC La2BB′O6 where B = Cr, Sc and V and B′ = Co, Ni. The electronic band gaps suggest these compounds are half-metallic (HF) semiconductors in the spin-up channel and metallic in the spin-down channel. Magnetic properties suggest these are ferromagnetic in nature, so all DPCs are half-metallic ferromagnetic (HM-FM). Furthermore, the compound La2CrCoO6 shows outstanding electronic and optical properties, so it can be used in optoelectronic/spintronic devices.

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Jayanthi, K., i Sunkara V. Manorama. "Lumino-magnetic YAG:Ce nanophosphors: novel synthesis routes for efficient luminescence and magnetic properties". J. Mater. Chem. C 2, nr 48 (2014): 10322–30. http://dx.doi.org/10.1039/c4tc01960a.

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Navarro-Quezada, Andrea. "Magnetic Nanostructures Embedded in III-Nitrides: Assembly and Performance". Crystals 10, nr 5 (1.05.2020): 359. http://dx.doi.org/10.3390/cryst10050359.

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III-Nitride semiconductors are the materials of choice for state-of-the-art opto-electronic and high-power electronic applications. Through the incorporation of magnetic ions, like transition metals and rare-earths, III-Nitrides have further extended their applicability to spintronic devices. However, in most III-Nitrides the low solubility of the magnetic ions leads to the formation of secondary phases that are often responsible for the observed magnetic behavior of the layers. The present review summarizes the research dedicated to the understanding of the basic properties, from the fabrication to the performance, of III-Nitride-based phase-separated magnetic systems containing embedded magnetic nanostructures as suitable candidates for spintronics applications.

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Soh, Yeong-Ah, i Ravi K. Kummamuru. "Spintronics in antiferromagnets". Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, nr 1951 (28.09.2011): 3646–57. http://dx.doi.org/10.1098/rsta.2011.0186.

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Magnetic domains and the walls between are the subject of great interest because of the role they play in determining the electrical properties of ferromagnetic materials and as a means of manipulating electron spin in spintronic devices. However, much less attention has been paid to these effects in antiferromagnets, primarily because there is less awareness of their existence in antiferromagnets, and in addition they are hard to probe since they exhibit no net magnetic moment. In this paper, we discuss the electrical properties of chromium, which is the only elemental antiferromagnet and how they depend on the subtle arrangement of the antiferromagnetically ordered spins. X-ray measurement of the modulation wavevector Q of the incommensurate antiferromagnetic spin-density wave shows thermal hysteresis, with the corresponding wavelength being larger during cooling than during warming. The thermal hysteresis in the Q vector is accompanied with a thermal hysteresis in both the longitudinal and Hall resistivity. During cooling, we measure a larger longitudinal and Hall resistivity compared with when warming, which indicates that a larger wavelength at a given temperature corresponds to a smaller carrier density or equivalently a larger antiferromagnetic ordering parameter compared to a smaller wavelength. This shows that the arrangement of the antiferromagnetic spins directly influences the transport properties. In thin films, the sign of the thermal hysteresis for Q is the same as in thick films, but a distinct aspect is that Q is quantized.

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SUKEGAWA, H., Z. C. WEN, S. KASAI, K. INOMATA i S. MITANI. "SPIN TRANSFER TORQUE SWITCHING AND PERPENDICULAR MAGNETIC ANISOTROPY IN FULL HEUSLER ALLOY Co2FeAl-BASED TUNNEL JUNCTIONS". SPIN 04, nr 04 (grudzień 2014): 1440023. http://dx.doi.org/10.1142/s2010324714400232.

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Some of Co -based full Heusler alloys have remarkable properties in spintronics, that is, high spin polarization of conduction electrons and low magnetic damping. Owing to these properties, magnetic tunnel junctions (MTJs) using Co -based full Heusler alloys are potentially of particular importance for spintronic application such as magnetoresistive random access memories (MRAMs). Recently, we have first demonstrated spin transfer torque (STT) switching and perpendicular magnetic anisotropy (PMA), which are required for developing high-density MRAMs, in full-Heusler Co 2 FeAl alloy-based MTJs. In this review, the main results of the experimental demonstrations are shown with referring to related issues, and the prospect of MTJs using Heusler alloys is also discussed.

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Li, Xinlu, Meng Zhu, Yaoyuan Wang, Fanxing Zheng, Jianting Dong, Ye Zhou, Long You i Jia Zhang. "Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe₃GaTe₂ with highly spin-polarized Fermi surfaces". Applied Physics Letters 122, nr 8 (20.02.2023): 082404. http://dx.doi.org/10.1063/5.0136180.

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Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW materials has largely impeded its development in practical spintronic devices. Inspired by the lately discovered vdW ferromagnet Fe3GaTe2, which has been shown to have magnetic order above room temperature and sizable perpendicular magnetic anisotropy, we investigate the basic electronic structure and magnetic properties of Fe3GaTe2 as well as tunneling magnetoresistance effect in magnetic tunnel junctions (MTJs) with structure of Fe3GaTe2/insulator/Fe3GaTe2 by using first-principles calculations. It is found that Fe3GaTe2 with highly spin-polarized Fermi surface ensures that such magnetic tunnel junctions may have prominent tunneling magnetoresistance effect at room temperature even comparable to existing conventional AlOx and MgO-based MTJs. Our results suggest that Fe3GaTe2-based MTJs may be the promising candidate for realizing long-waiting full magnetic vdW spintronic devices.

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Chen, Xia, i Wenbo Mi. "Mechanically tunable magnetic and electronic transport properties of flexible magnetic films and their heterostructures for spintronics". Journal of Materials Chemistry C 9, nr 30 (2021): 9400–9430. http://dx.doi.org/10.1039/d1tc01989a.

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The mechanically tunable magnetic and electronic transport properties of flexible magnetic films and their heterostructures for spintronics have been reviewed, where the conclusion and outlook are also presented.

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Rozprawy doktorskie na temat "Magnetic properties in spintronics"

Owen, Man Hon Samuel. "Electrical gating effects on the magnetic properties of (Ga,Mn)As diluted magnetic semiconductors". Thesis, University of Cambridge, 2010. https://www.repository.cam.ac.uk/handle/1810/228705.

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The aim of the research project presented in this thesis is to investigate the effects of electrostatic gating on the magnetic properties of carrier-mediated ferromagnetic Ga1-xMnxAs diluted magnetic semiconductors. (Ga,Mn)As can be regarded as a prototype material because of its strong spin-orbit coupling and its crystalline properties which can be described within a simple band structure model. Compressively strained (Ga,Mn)As epilayer with more complex in-plane competing cubic and uniaxial magnetic anisotropies is of particular interest since a small variation of these competing anisotropy fields provide a means for the manipulation of its magnetization via external electric field. An all-semiconductor epitaxial p-n junction field-effect transistor (FET) based on low-doped Ga0.975Mn0.025As was fabricated. It has an in-built n-GaAs back-gate, which, in addition to being a normal gate, enhances the gating effects, especially in the depletion of the epilayer, by decreasing the effective channel thickness by means of a depletion region. A shift in the Curie temperature of ~2 K and enhanced anisotropic magnetoresistance (AMR) (which at saturation reaches ~30%) is achieved with a depletion of a few volts. Persistent magnetization switchings with short electric field pulses are also observed. The magnitude of the switching field is found to decrease with increasing depletion of the (Ga,Mn)As layer. By employing the k . p semiconductor theory approach (performed by our collaborators in Institute of Physics, ASCR, Prague), including strong spin-orbit coupling effects in the host semiconductor valence band, a change in sign of Kc at hole density of approximately 1.5x1020 cm-3 is observed. Below this density, the [110]/[1⁻10] magnetization directions are favoured, consistent with experimental data. A double-gated FET, with an ionic-gel top-gate coupled with a p-n junction back-gate based on the same material, was also employed in an attempt to achieve larger effects through gating. It reaffirms the results obtained and demonstrates enhanced gating effects on the magnetic properties of (Ga,Mn)As.

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Gustavsson, Fredrik. "Properties of Fe/ZnSe Heterostructures : A Step Towards Semiconductor Spintronics". Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2002. http://publications.uu.se/theses/91-554-5314-7/.

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Lu, Yongxiong. "Synthesis and magnetic properties of Feâ‚ƒOâ‚„/GaAs(100) structures for spintronics". Thesis, University of York, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.424536.

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Rovinelli, Giovanni. "Magnetic, morphological and structural properties of polycrystalline ultrathin cobalt films for organic spintronics". Master's thesis, Alma Mater Studiorum - Università di Bologna, 2021.

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The opportunity of using the organic molecules in spintronic devices appeared challenging since these materials, having nominally high spin relaxation times, are suitable for coherent spin manipulation. The spin behaviour in these molecular spintronic devices has been demonstrated to strongly depend on the nature of the chemical bonds between the organic molecules and the magnetic electrodes affecting also the magnetic response of both molecular and metallic sides. In particular, the adsorption of an organic molecule on a ferromagnetic layer has been proved to change the local magnetism of a magnetic substrate. In spite of their technological interest, the investigation of such effect in the case of the polycrystalline magnetic thin film is still lacking. My work contributes to filling this gap by studying the structural, morphological and magnetic properties of ultrathin polycrystalline cobalt films covered by the well-known buckminsterfullerene organic molecule (C60). The combined investigation by AFM, TEM, SQUID magnetometry and anisotropic magnetoresistance allowed to correlate the sample microstructure with the magnetic response and to identify the main mechanism responsible for spin transport in these FM layers. Analysed films are composed of polycrystalline cobalt grains decoupled by non-crystalline amorphous regions. The volume ratio between crystalline grains and amorphous regions increases by increasing the film thickness. As expected, the values of saturation magnetisation decrease as the crystallinity decreases and a typical blocking behaviour is present. The cobalt layers are also subjected to oxidation at the interface with the single crystal oxide substrate. The presence of amorphous phase in polycrystalline cobalt ultrathin film impacts the analysis of transport properties: the anisotropic magnetoresistance slightly depends on the crystalline phase while it is mainly inherent to the amorphous component.

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Vahaplar, Kadir Tarı Süleyman. "Structural And Magnetic Properties os Si(100)/Ta/Co Multilayers For Spintronics Applications". [s.l.]: [s.n.], 2007. http://library.iyte.edu.tr/tezler/master/fizik/T000662.pdf.

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Newhouse-Illige, T., Yaohua Liu, M. Xu, Hickey D. Reifsnyder, A. Kundu, H. Almasi, Chong Bi i in. "Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions". NATURE PUBLISHING GROUP, 2017. http://hdl.handle.net/10150/624333.

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Magnetic interlayer coupling is one of the central phenomena in spintronics. It has been predicted that the sign of interlayer coupling can be manipulated by electric fields, instead of electric currents, thereby offering a promising low energy magnetization switching mechanism. Here we present the experimental demonstration of voltage-controlled interlayer coupling in a new perpendicular magnetic tunnel junction system with a GdOx tunnel barrier, where a large perpendicular magnetic anisotropy and a sizable tunnelling magnetoresistance have been achieved at room temperature. Owing to the interfacial nature of the magnetism, the ability to move oxygen vacancies within the barrier, and a large proximity-induced magnetization of GdOx, both the magnitude and the sign of the interlayer coupling in these junctions can be directly controlled by voltage. These results pave a new path towards achieving energy-efficient magnetization switching by controlling interlayer coupling.

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Tsai, I.-Ling. "Magnetic properties of two-dimensional materials : graphene, its derivatives and molybdenum disulfide". Thesis, University of Manchester, 2014. https://www.research.manchester.ac.uk/portal/en/theses/magnetic-properties-of-twodimensional-materials-graphene-its-derivatives-and-molybdenum-disulfide(59dcba1b-332e-4a58-86f6-80ed56c7fdd1).html.

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Graphene, an atomically thin material consisting of a hexagonal, highly packed carbon lattice, is of great interests in its magnetic properties. These interests can be categorized in several fields: graphene-based magnetic materials and their applications, large diamagnetism of graphene, and the heterostructures of graphene and other two dimensional materials. In the first aspect, magnetic moments can be in theory introduced to graphene by minimizing its size or introducing structural defects, leading to a very light magnetic material. Furthermore, weak spin-orbital interaction, and long spin relaxation length make graphene promising for spintronics. The first part of this thesis addressed our experimental investigation in defect-induced magnetism of graphene. Non-interacted spins of graphene have been observed by intentionally introducing vacancies and adatoms through ion-irradiation and fluorination, respectively. The defect concentration or the magnetic moments introduced in this thesis cannot provide enough interaction for magnetic coupling. Furthermore, the spins induced by vacancies and adatoms can be controlled through shifting the Fermi energy of graphene using molecular doping, where the adatoms were alternatively introduced by annealing in the inert environment. The paramagnetic responses in graphene induced by vacancy-type defects can only be diverted to half of its maximum, while those induced by sp3 defects can be almost completely suppressed. This difference is supposed that vacancy-type defects induced two localized states (pie and sigma). Only the latter states, which is also the only states induced by sp3 defects, involves in the suppression of magnetic moments at the maximum doping achieved in this thesis. The observation through high resolution transmission electron microscope (HR-TEM) provides more information to the hypothesis of the previous magnetic findings. Reconstructed single vacancy is the majority of defects discovered in proton-irradiated graphene. This result verifies the defect-induced magnetic findings in our results, as well as the electronic properties of defected graphene in the literatures. On the other hand, the diamagnetic susceptibility of neutral graphene is suggested to be larger than that of graphite, and vanish rapidly as a delta-like function when graphene is doped. In our result, surprisingly, the diamagnetic susceptibility varies little when the Fermi level is less than 0.3 eV, in contrast with the theory. When the Fermi energy is higher than 0.3 eV, susceptibility then reduces significantly as the trend of graphite. The little variation in susceptibility near the Dirac point is probably attributed to the spatial confinement of graphene nanoflakes, which are the composition of graphene laminates. In the end of this thesis, we discuss the magnetic properties in one of the other two dimensional materials, molybdenum disulfide (MoS2). It is a potential material for graphene-based heterostructure applications. The magnetic moments in MoS2 are shown to be induced by either edges or vacancies, which are introduced by sonication or proton-irradiation, respectively, similar to the suggestions by theories. However, no significant ferromagnetic finding has been found in all of our cases.

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Lampert, Lester Florian. "High-Quality Chemical Vapor Deposition Graphene-Based Spin Transport Channels". PDXScholar, 2017. https://pdxscholar.library.pdx.edu/open_access_etds/3327.

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Spintronics reaches beyond typical charge-based information storage technologies by utilizing an addressable degree of freedom for electron manipulation, the electron spin polarization. With mounting experimental data and improved theoretical understanding of spin manipulation, spintronics has become a potential alternative to charge-based technologies. However, for a long time, spintronics was not thought to be feasible without the ability to electrostatically control spin conductance at room temperature. Only recently, graphene, a 2D honeycomb crystalline allotrope of carbon only one atom thick, was identified because of its predicted, long spin coherence length and experimentally realized electrostatic gate tunability. However, there exist several challenges with graphene spintronics implementation including weak spin-orbit coupling that provides excellent spin transfer yet prevents charge to spin current conversion, and a conductivity mismatch due to the large difference in carrier density between graphene and a ferromagnet (FM) that must be mitigated by use of a tunnel barrier contact. Additionally, the usage of graphene produced via CVD methods amenable to semiconductor industry in conjunction with graphene spin valve fabrication must be explored in order to promote implementation of graphene-based spintronics. Despite advances in the area of graphene-based spintronics, there is a lack of understanding regarding the coupling of industry-amenable techniques for both graphene synthesis and lateral spin valve fabrication. In order to make any impact on the application of graphene spintronics in industry, it is critical to demonstrate wafer-scale graphene spin devices enabled by wafer-scale graphene synthesis, which utilizes thin film, wafer-supported CVD growth methods. In this work, high-quality graphene was synthesized using a vertical cold-wall furnace and catalyst confinement on both SiO2/Si and C-plane sapphire wafers and the implementation of the as-grown graphene for fabrication of graphene-based non-local spin valves was examined. Optimized CVD graphene was demonstrated to have ID/G ≈ 0.04 and I2D/G ≈ 2.3 across a 2" diameter graphene film with excellent continuity and uniformity. Since high-quality, large-area, and continuous CVD graphene was grown, it enabled the fabrication of large device arrays with 40 individually addressable non-local spin valves exhibiting 83% yield. Using these arrays, the effects of channel width and length, ferromagnetic-tunnel barrier width, tunnel barrier thickness, and level of oxidation for Ti-based tunnel barrier contacts were elucidated. Non-local, in-plane magnetic sweeps resulted in high signal-to-noise ratios with measured ΔRNL across the as-fabricated arrays as high as 12 Ω with channel lengths up to 2 µm. In addition to in-plane magnetic field spin signal values, vertical magnetic field precession Hanle effect measurements were conducted. From this, spin transport properties were extracted including: spin polarization efficiency, coherence lifetime, and coherence distance. The evaluation of industry-amenable production methods of both high-quality graphene and lateral graphene non-local spin valves are the first steps toward promoting the feasibility of graphene as a lateral spin transport interconnect material in future spintronics applications. By addressing issues using a holistic approach, from graphene synthesis to spin transport implementation, it is possible to begin assessment of the challenges involved for graphene spintronics.

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Staneva, Maya. "Theoretical study of dilute magnetic semiconductors : Properties of (Ga,Mn)As". Thesis, Uppsala universitet, Institutionen för fysik och astronomi, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-126096.

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The dilute magnetic semiconductor (Ga,Mn)As , which is the most interesting and promising material for spintronics applications, has been theoretically studied by using Density Functional Theory. First of all, calculations on GaAs were done and it was found that GaAs is a semiconductor with a direct band gap. The calculated value of the band gap is ~ 0.5eV. Secondly, the material iron was considered and it was confirmed that iron is a ferromagnetic metal with 2.2µB net magnetic moment. Then a magnetic impurity of manganese, Mn was introduced in the nonmagnetic GaAs and it became ferromagnetic with a net magnetic moment of 4µB. The origin of the ferromagnetic behaviour is discussed and also the Curie temperature TC of the material. It appeared that (Ga,Mn)As is a suitable material for DMS but TC has to be increased before (Ga,Mn)As could be used for spintronics applications and on that account some methods of increasing TC are considered at the end.
Den magnetiska halvledaren (Ga,Mn)As som är det mest intressanta och lovande materialet för spinelektroniska tillämpningar har teoretiskt undersökts med hjälp av Täthetsfunktionalteorin. Först gjordes beräkningar på GaAs och det visade sig att GaAs är en halvledare med direkt bandgap. Det beräknade värdet på bandgapet är ca 0.5eV. Sedan var det järn som undersöktes och det blev bekräftat att järn är en ferromagnetisk metall med netto magnetisk moment lika med 2.2μB. Då magnetiska störningar i form av mangan atomer, Mn, infördes i det omagnetiska GaAs blev halvledaren ferromagnetisk med netto magnetisk moment lika med 4μB. Orsakerna till den ferromagnetiska ordningen diskuteras och även Curie temperaturen TC för materialet. Det visade sig att (Ga,Mn)As är ett lämpligt material för tillverkning av magnetiska halvledare men TC måste ökas innan (Ga,Mn)As skulle kunna användas i spinntroniska tillämpningar och av det skälet anges i slutet vissa metoder för att öka TC.

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Gupta, Shalini. "Growth of novel wide bandgap room temperature ferromagnetic semiconductor for spintronic applications". Diss., Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/33809.

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This work presents the development of a GaN-based dilute magnetic semiconductor (DMS) by metal organic chemical vapor deposition (MOCVD) that is ferromagnetic at room temperature (RT), electrically conductive, and possesses magnetic properties that can be tuned by n- and p-doping. The transition metal series (TM: Cr, Mn, and Fe) along with the rare earth (RE) element, Gd, was investigated in this work as the magnetic ion source for the DMS. Single- phase and strain-free GaTMN films were obtained. Optical measurements revealed that Mn is a deep acceptor in GaN, while Hall measurements showed that these GaTMN films were semi-insulating, making carrier mediated exchange unlikely. Hysteresis curves were obtained for all the GaTMN films, and by analyzing the effect of n- and p-dopants on the magnetic properties of these films it was determined that the magnetization is due to magnetic clusters. These findings are supported by the investigation of the effect of TM dopants in GaN nanostructures which reveal that TMs enhance nucleation resulting in superparamagnetic nanostructures. Additionally, this work presents the first report on the development of GaGdN by MOCVD providing an alternate route to developing a RT DMS. Room temperature magnetization results revealed that the magnetization strength increases with Gd concentration and can be enhanced by n- and p-doping, with holes being more efficient at stabilizing the ferromagnetic signal. The GaGdN films obtained in this work are single-phase, unstrained, and conductive making them suitable for the development of multifunctional devices that integrate electrical, optical, and magnetic properties.

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Książki na temat "Magnetic properties in spintronics"

1946-, Zabel H., i Bader Samuel D, red. Magnetic heterostructures: Advances and perspectives in spinstructures and spintransport. Berlin: Springer Verlag, 2007.

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1946-, Maekawa S., i Shinjō Teruya 1938-, red. Spin dependent transport in magnetic nanostructures. Boca Raton: CRC Press, 2002.

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S, Maekawa, i Shinjo Teruya 1938-, red. Spin dependent transport in magnetic nanostructures. London: Taylor & Francis, 2002.

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1963-, Zhang Shufeng, Materials Research Society, Materials Research Society Meeting i Symposium R, "Advanced Characterization of Artificially Structured Magnetic Materials" (2002 : Boston, Mass.), red. Magnetoelectronics and magnetic materials: Novel phenomena and advanced characterization : symposium held December 1-5, 2002, Boston, Massachusetts, U.S.A. Warrendale, Pa: Materials Research Society, 2003.

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Spintronics. Oxford: Elsevier, 2008.

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Kawazoe, Yoshiyuki, i Ryunosuke Note. Magnetic Properties of Metals: Magnetic and Electric Properties of Magnetic Metallic Multilayers. Berlin, Heidelberg: Springer Berlin Heidelberg, 2022. http://dx.doi.org/10.1007/978-3-662-64909-1.

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R, Fickett F., red. Units for magnetic properties. Boulder, Colo: U.S. Dept. of Commerce, National Bureau of Standards, 1985.

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Wijn, H. P. J., red. Magnetic Properties of Metals. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-58218-9.

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B, Tamayo Kenneth, red. Magnetic properties of solids. Hauppauge, NY: Nova Science Publishers, 2009.

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Tiberto, Paola, i Franco Vinai. Magnetic amorphous alloys: Structural, magnetic and transport properties. Trivandrum, India: Research Signpost, 2003.

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Części książek na temat "Magnetic properties in spintronics"

Mattana, Richard, Nicolas Locatelli i Vincent Cros. "Spintronics and Synchrotron Radiation". W Springer Proceedings in Physics, 131–63. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-64623-3_5.

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AbstractHaving access to the electronic and magnetic properties of spintronic systems is of crucial importance in view of their future technological developments. Our purpose in this chapter is to elaborate how a variety of synchrotron radiation-based measurements provides powerful and often unique techniques to probe them. We first introduce general concepts in spintronics and present some of the important scientific advances achieved in the last 30 years. Then we will describe some of the key investigations using synchrotron radiation concerning voltage control of magnetism, spin-charge conversion and current-driven magnetization dynamics.

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Tannous, Charbel, i Jacek Gieraltowski. "Magnetic Properties: From Traditional to Spintronic". W Springer Handbook of Electronic and Photonic Materials, 1. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48933-9_4.

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Yasuda, Kenji. "Spintronic Phenomena in Magnetic/Nonmagnetic Topological Insulator Heterostructures". W Emergent Transport Properties of Magnetic Topological Insulator Heterostructures, 47–80. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-7183-1_4.

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Pokar, Rushikesh, i Alpa Dashora. "Study of Magnetic Properties of 2D vdW Ferromagnets Fe3(Si/Sn)Te2 and Mn3SiTe2 towards Potential Spintronics Applications". W Intelligent Computing Techniques for Smart Energy Systems, 529–39. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0252-9_48.

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Dey, Puja, i Jitendra Nath Roy. "Magnetic Domain Wall Motion". W Spintronics, 145–61. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-0069-2_6.

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Balke, Benjamin, Gerhard H. Fecher i Claudia Felser. "New Heusler Compounds and Their Properties". W Spintronics, 15–43. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-90-481-3832-6_2.

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Wüstenberg, Jan-Peter, Martin Aeschlimann i Mirko Cinchetti. "Characterization of the Surface Electronic Properties of Co2Cr1−xFexAl". W Spintronics, 271–84. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-90-481-3832-6_12.

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Schneider, Horst, Enrique Vilanova Vidal i Gerhard Jakob. "Transport Properties of Co2(Mn, Fe)Si Thin Films". W Spintronics, 331–42. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-90-481-3832-6_15.

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Hoa Hong, Nguyen. "Magnetic Oxide Semiconductors". W Handbook of Spintronics, 563–83. Dordrecht: Springer Netherlands, 2016. http://dx.doi.org/10.1007/978-94-007-6892-5_22.

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Nguyen, Hoa Hong. "Magnetic Oxide Semiconductors". W Handbook of Spintronics, 1–18. Dordrecht: Springer Netherlands, 2015. http://dx.doi.org/10.1007/978-94-007-7604-3_22-1.

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Streszczenia konferencji na temat "Magnetic properties in spintronics"

Matos-Abiague, Alex, i Igor Zutic. "Magnetic and superconducting proximity effects on the transport properties of hybrid heterostructures (Conference Presentation)". W Spintronics X, redaktorzy Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2017. http://dx.doi.org/10.1117/12.2277132.

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Wisniowski, Piotr, Maciej Nawrocki i Michal Dabek. "Controlling and modifying sensing properties of tunneling magnetoresistance sensors by voltage controlled magnetic anisotropy". W Spintronics XII, redaktorzy Henri-Jean M. Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2019. http://dx.doi.org/10.1117/12.2527538.

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Aaghaei, Fatematossadat P., Mahnaz Mohammadi i Tayyebatossadat P. Aghaei. "Density functional theory study of magnetic and structural properties of deoxyhemoglobin and aquomethemoglobin for use in MRI". W Spintronics XII, redaktorzy Henri-Jean M. Drouhin, Jean-Eric Wegrowe i Manijeh Razeghi. SPIE, 2019. http://dx.doi.org/10.1117/12.2528868.

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Tyagi, Pawan. "Spin Photovoltaic Effect on Molecule Coupled Ferromagnetic Films of a Magnetic Tunnel Junction". W ASME 2013 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/imece2013-63866.

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Economical solar energy harvesting can be boosted by the discovery of fundamentally new photovoltaic mechanism, and a suitable system to realize it with commonly available materials. One promising route is to focus on spin property of the electron, not charge, and develop spin photovoltaic effect with widely available ferromagnetic metals like iron and nickel. This paper reports the observation of photovoltaic effect on the molecular spintronics device composed of a magnetic tunnel junctions (MTJ) testbed and organometallic molecular clusters (OMCs). Our MSDs were produced by bridging the OMC channels between the ferromagnetic films of a prefabricated MTJ testbed with exposed side edges. The MTJ testbed exhibited OMC induced strong increase in exchange coupling and photovoltaic effect. Control experiments on isolated ferromagnetic films, same as utilized in the MTJ testbed, suggested that OMCs neither affected the magnetic properties nor produced any photovoltaic effect. Photovoltaic effect was only observed on the pair of ferromagnetic films serving as magnetic electrodes in a MTJ. Our recent Monte Carlo simulations and multiple magnetic characterizations provide evidence that molecules induced strong coupling between two ferromagnetic films can dramatically alter the overall magnetic properties of a MTJ; presumably making an ordinary MTJ suitable for spin based photovoltaic effect. The photovoltaic effect on our molecular spintronics devices (MTJ+OMCs) was sensitive towards the external magnetic field and temperature. Present paper motivates further studies to understand the spin photovoltaic effect in molecular spintronics devices.

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Tyagi, Pawan, i Christopher D’Angelo. "A Monte Carlo Study of Molecular Spintronics Devices". W ASME 2013 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/imece2013-62413.

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Molecular spintronics devices (MSDs) are capable of harnessing the controllable transport and magnetic properties of molecular device elements and are highly promising candidates for revolutionizing computer logic and memory. These advanced MSD can enable the next generation of instrumentation and control devices for the wide range of mechanical engineering systems. A MSD is typically produced by placing magnetic molecule(s) between the two ferromagnetic electrodes. Recent experimental studies show that some magnetic molecules produced unprecedented strong exchange couplings between the two ferromagnetic electrodes, leading to intriguing magnetic and transport properties in a MSD. Future development of MSDs will critically depend on obtaining an in-depth understanding of the molecule induced exchange coupling, and its impact on MSD’s switchability, functional temperature range, stability etc. However, the large size of MSD systems and unsuitable device designs are the two biggest hurdles in theoretical and experimental studies of magnetic attributes produced by molecules in a MSD. This research theoretically studies the MSD by performing Monte Carlo simulations (MCS). The effect of magnetic molecule induced exchange coupling was studied at different temperature and for different device sizes — represented by a 2D Ising model. Our MCS shows that thermal energy of the MSD strongly influenced the molecular coupling effect. We studied the effect of a wide range of molecule-metal electrode couplings on the fundamental properties of MSDs. If molecules induced exchange coupling increased beyond a threshold limit a MSD acquired dramatically new attributes. Our MCS exhibited that the transition points in MSD’s magnetic properties was the interplay of temperature and molecular coupling strength. These simulations will allow the understanding of fundamental device mechanisms behind the functioning of novel MSDs. Our MSD model represents a myriad of magnetic molecules and ferromagnets combinations promising for realizing experimental MSDs. These MCS will also assist in designing new class of MSDs with desired attributes for advanced computers and control systems.

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Lam, Tu-Ngoc, Ming-Wei Lin, Yu-Ling Lai, Hong-Ji Lin, Ying-Hao Chu i Yao-Jane Hsu. "Termination Effect of LSMO on Interfacial Electronic and Magnetic Properties in Alq3-Based Organic Spintronics". W 2016 International Conference of Asian Union of Magnetics Societies (ICAUMS). IEEE, 2016. http://dx.doi.org/10.1109/icaums.2016.8479888.

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Dillard, Joshua, Uzma Amir, Pawan Tyagi i Vincent Lamberti. "Structural Stability of Magnetic Tunnel Junction Based Molecular Spintronics Devices (MTJMSD)". W ASME 2020 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/imece2020-24134.

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Abstract Harnessing the exotic properties of molecular level nanostructures to produce novel sensors, metamaterials, and futuristic computer devices can be technologically transformative. In addition, connecting the molecular nanostructures to ferromagnetic electrodes bring the unprecedented opportunity of making spin property based molecular devices. We have demonstrated that magnetic tunnel junction based molecular spintronics device (MTJMSD) approach to address numerous technological hurdles that have been inhibiting this field for decades (P. Tyagi, J. Mater. Chem., Vol. 21, 4733). MTJMSD approach is based on producing a capacitor like a testbed where two metal electrodes are separated by an ultrathin insulator and subsequently bridging the molecule nanostructure across the insulator to transform a capacitor into a molecular device. Our prior work showed that MTJMSDs produced extremely intriguing phenomenon such as room temperature current suppression by six orders, spin photovoltaic effect, and evolution of new forms of magnetic metamaterials arising due to the interaction of the magnetic a molecule with two ferromagnetic thin films. However, making robust and reproducible electrical connections with exotic molecules with ferromagnetic electrodes is full of challenges and requires attention to MTJMSD structural stability. This paper focuses on MTJMSD stability by describing the overall fabrication protocol and the associated potential threat to reliability. MTJMSD is based on microfabrication methods such as (a) photolithography for patterning the ferromagnetic electrodes, (b) sputtering of metallic thin films and insulator, and (c) at the end electrochemical process for bridging the molecules between two ferromagnetic films separated by ∼ 2nm insulating gap. For the successful MTJMSD fabrication, the selection of ferromagnetic metal electrodes and thickness was found to be a deterministic factor in designing the photolithography, thin film deposition strategy, and molecular bridging process. We mainly used isotropic NiFe soft magnetic material and anisotropic Cobalt (Co) with significant magnetic hardness. We found Co was susceptible to chemical etching when directly exposed to photoresist developer and aged molecular solution. However, NiFe was very stable against the chemicals we used in the MTJMSD fabrication. As compared to NiFe, the Co films with > 10nm thickness were susceptible to mechanical stress-induced nanoscale deformities. However, cobalt was essential to produce (a) low leakage current before transforming the capacitor from the magnetic tunnel junction into molecular devices and (b) tailoring the magnetic properties of the ferromagnetic electrodes. This paper describes our overall MTJMSD fabrication scheme and process optimization to overcome various challenges to produce stable and reliable MTJMSDs. We also discuss the role of mechanical stresses arising during the sputtering of the ultrathin insulator and how to overcome that challenge by optimizing the insulator growth process. This paper will benefit researchers striving to make nanoscale spintronics devices for solving grand challenges in developing advanced sensors, magnetic metamaterials, and computer devices.

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Yasuhiko Hayashi, T. Fujita, T. Tokunaga, N. L. Rupesinghe, K. B. K. Teo, G. A. J. Amaratunga i M. Tanemura. "Growth and magnetic properties of ferromagnetic Co nanorods filled inside carbon nanotubes towards nanoscale spintronics". W 2008 2nd IEEE International Nanoelectronics Conference. IEEE, 2008. http://dx.doi.org/10.1109/inec.2008.4585664.

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Shameem Banu, I. B., S. Divya Lakshmi, Shahanaz Kossar i Noor Aman Ahrar Mundari. "Substitution driven optical and magnetic properties of neodymium and nickel doped BiFeO3 ceramics for spintronics applications". W 2018 International Conference on Recent Trends in Electrical, Control and Communication (RTECC). IEEE, 2018. http://dx.doi.org/10.1109/rtecc.2018.8625635.

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Bergamini, Luca, Gaspar Armelles, Alfonso Cebollada, M. Ujue Gonzales, Raquel Alvaro, Lorena Torne, Nerea Zabala i Javier Aizpurua. "Magnetic modulation of IR properties of rod-slit complementary spintronic metasurfaces in presence of a molecular vibration". W 3D Image Acquisition and Display: Technology, Perception and Applications. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/3d.2022.jw2a.44.

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We show that the magnetic-modulation of the optical response induced by an external magnetic field in giant-magneto-resistance rod-slit arrays is more sensitive to the presence of a molecular vibration than the direct optical response.

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Raporty organizacyjne na temat "Magnetic properties in spintronics"

Lichti, Roger. SISGR-MuSR Investigations of Magnetic Semiconductors for Spintronics Applications. Office of Scientific and Technical Information (OSTI), marzec 2014. http://dx.doi.org/10.2172/1148701.

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Krivorotov, Ilya. Nanoscale magnetic Josephson junctions and superconductor/ferromagnet proximity effects for low-power spintronics. Office of Scientific and Technical Information (OSTI), grudzień 2019. http://dx.doi.org/10.2172/1577326.

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Moler, Kathryn A. Magnetic Properties of Nanocrystals. Fort Belvoir, VA: Defense Technical Information Center, listopad 2005. http://dx.doi.org/10.21236/ada441687.

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Goldfarb, R. B., i F. R. Fickett. Units for magnetic properties. Gaithersburg, MD: National Bureau of Standards, 1985. http://dx.doi.org/10.6028/nbs.sp.696.

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Camley, R. E. Magnetic, Electronic, and Thermal Properties of Magnetic Multilayers. Fort Belvoir, VA: Defense Technical Information Center, styczeń 1996. http://dx.doi.org/10.21236/ada370040.

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Author, Not Given. (Magnetic properties of doped semiconductors). Office of Scientific and Technical Information (OSTI), styczeń 1990. http://dx.doi.org/10.2172/6435513.

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Mielke, Charles H., Vivien Zapf, Jae Wook Kim, Eun D. Mun, Joseph P. Baiardo, Jeremy N. Mitchell, Scott Richmond i Daniel S. Schwartz. Pu doped with Hydrogen: Magnetic Properties. Office of Scientific and Technical Information (OSTI), wrzesień 2013. http://dx.doi.org/10.2172/1095224.

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Chrzan, D. C. Magnetic properties of surfaces and interfaces. Office of Scientific and Technical Information (OSTI), listopad 1989. http://dx.doi.org/10.2172/7073523.

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Dickerson, James Henry. Structure and Magnetic Properties of Lanthanide Nanocrystals. Office of Scientific and Technical Information (OSTI), czerwiec 2014. http://dx.doi.org/10.2172/1140150.

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Majetich, Sara. Frequency-Dependent Properties of Magnetic Nanoparticle Crystals. Office of Scientific and Technical Information (OSTI), maj 2016. http://dx.doi.org/10.2172/1253377.

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