Artykuły w czasopismach: „Low Power ESD Protection”

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Kwon, Sang-Wook, Seung-Gu Jeong, Jeong-Min Lee i Yong-Seo Koo. "Design of Destruction Protection and Sustainability Low-Dropout Regulator Using an Electrostatic Discharge Protection Circuit". Sustainability 15, nr 13 (26.06.2023): 10126. http://dx.doi.org/10.3390/su151310126.

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In terms of sustainable power semiconductors, the embedding of an electrostatic discharge (ESD) protection circuit in an integrated circuit (IC) is an important aspect. In order for the semiconductor circuit to operate continuously or stably, a sufficient protection circuit against external surges must be configured. The purpose of this thesis is not only to effectively operate the low-dropout (LDO) regulator according to the load current, but to also secure high reliability against ESD situations by embedding an ESD protection circuit at the IC level. Moreover, the existence and nonexistence of an ESD protection circuit at the IC level is directly related to reliability. The proposed LDO regulator has high reliability against ESD situations using an embedded silicon controlled rectifier (SCR)-based ESD protection circuit in the I/O clamp and power clamp. The results revealed that the LDO regulator can not only effectively control the output voltage according to the load current, but it can also stably maintain the output voltage against the ESD surge. Moreover, the proposed LDO regulator with an embedded ESD protection circuit implemented in a 0.13 μm BCD process maintained an undershoot voltage of 21 mV and overshoot voltage of 19 mV for a load current of 300 mA.

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Song, BoBae, i YongSeo Koo. "Low Ron and high robustness ESD protection design for low‐voltage power clamp application". Electronics Letters 52, nr 18 (wrzesień 2016): 1554–55. http://dx.doi.org/10.1049/el.2016.2391.

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Hadzi-Vukovic, J., M. Jevtic, M. Glavanovics i H. Rothleitner. "The study of ESD induced defects in smart power ESD protection circuits using low frequency noise measurements". physica status solidi (a) 205, nr 11 (22.09.2008): 2544–47. http://dx.doi.org/10.1002/pssa.200780115.

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Jiang, yibo, Hui Bi, Zhihao Xu, Wei Zhao, Yuanyuan Zhang i Xiaolei Wang. "Polysilicon devices as a highly compatible ESD protection with modulable voltage and low capacitance". International Journal of Modern Physics B 35, nr 04 (2.02.2021): 2150052. http://dx.doi.org/10.1142/s0217979221500521.

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The electronic circuits fabricated in a variety of technologies for different applications are all vulnerable to the electrostatic discharge (ESD) event. In this paper, polysilicon devices are investigated as ESD protection because of the noticeable advantages such as compatibility with several technologies, low parasitical capacitance, and little noise coupling. By forming the p-i-n diode in the polysilicon layer and stacking them together, the single polysilicon diode (SPD) and cascaded polysilicon diode (CasPD) are implemented in the 0.35 [Formula: see text] high voltage diffusion process. Through DC IV/CV, transmission line pulse (TLP), and zipping test, the CasPD presents as ESD protection for an S-band RF power amplifier, with high process-compatibility, modulable voltage, low leakage current and parasitic capacitance.

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Tian, Zhuo, i Bai Cheng Li. "Conduction Uniformity Improvement of ESD Protection Device in 0.35 μm Partially-Depleted SOI Salicided CMOS Technology". Applied Mechanics and Materials 687-691 (listopad 2014): 3251–54. http://dx.doi.org/10.4028/www.scientific.net/amm.687-691.3251.

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ComparedtobulkCMOStechnology,Silicon-on-Insulator (SOI) CMOS technology has many advantages, such as low power consumption, low leakage current, low parasitic capacitance and a low soft error rate from both alpha particles and cosmic rays. However,electrostatic discharge (ESD) protection in SOI technology is still a major substantial barrier to overcome for the poor thermal conductivity of isolation oxide and the absence of vertical diode and silicon controlled rectifier (SCR).

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Chen, Shen Li, i Tzung Shian Wu. "Influence of a Deep NBL Structure on ESD/Latch-Up Immunities in the Power Device nLDMOS". Advanced Materials Research 732-733 (sierpień 2013): 1207–11. http://dx.doi.org/10.4028/www.scientific.net/amr.732-733.1207.

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In this paper, we propose a novel high-voltage (HV) nLDMOS transistor with a small Ron resistance, low trigger voltage (Vt1) and high holding voltage (Vh) characteristics. Here, we introduce a deep N+-buried-layer (NBL) into this HV nLDMOS to evaluate the ESD/latch-up (LU) parameters variation. These electric snapback parameters affect the reliability of proposed device and its performance. Eventually, we expect this proposed HV stucture processed better characteristic behaviors, which can be applied to the power electronics and ESD protection application of HV ICs.

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Berenguer, Roc, Gui Liu i Yang Xu. "A Low Power 77 GHz Low Noise Amplifier With an Area Efficient RF-ESD Protection in 65 nm CMOS". IEEE Microwave and Wireless Components Letters 20, nr 12 (grudzień 2010): 678–80. http://dx.doi.org/10.1109/lmwc.2010.2087015.

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Chang, Rong-Kun, i Ming-Dou Ker. "Design of High-Voltage-Tolerant Power-Rail ESD Protection Circuit for Power Pin of Negative Voltage in Low-Voltage CMOS Processes". IEEE Transactions on Electron Devices 67, nr 1 (styczeń 2020): 40–46. http://dx.doi.org/10.1109/ted.2019.2954754.

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Zhang, Wei Qiang, Li Su, Jun Wang, Bin Bin Liu i Jian Ping Hu. "Design and Manufacture of Energy-Recycling Pads for Low-Power Chips". Key Engineering Materials 460-461 (styczeń 2011): 467–72. http://dx.doi.org/10.4028/www.scientific.net/kem.460-461.467.

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Energy-recycling output pad cells for driving adiabatic chips are designed, which have been fabricated with Chartered 0.35um process and tested. The proposed energy-recycling output pad cells include mainly bonding pads, electrostatic discharge (ESD) protection circuits, and two stage energy-recycling buffers that are used to drive the large load capacitances on chip pads. The two stage energy-recycling buffers are realized using CPAL (Complementary Pass-transistor Adiabatic Logic) and PAL-2N (pass-transistor adiabatic logic with NMOS pull-down configuration), respectively. For comparison, a conventional output pad cell is also embedded in the test chip. The function verifications and energy loss tests for the three output pad cells are carried out. The energy consumption of the proposed two energy-recycling output pad cells has large savings over a wide range of frequencies, as compared with the conventional CMOS counterparts, since the energy on large load capacitances in the chip pads can be well recycled.

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Cheng, Guoxiao, Zhiqun Li, Pengfei Yue, Lei Luo, Xiaodong He i Boyong He. "A 6.5-kV HBM ESD-protected high-gain LNA using cascaded L-match input network". Modern Physics Letters B 33, nr 23 (16.08.2019): 1950280. http://dx.doi.org/10.1142/s0217984919502804.

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A wideband (2–3 GHz) three-stage low noise amplifier (LNA) with electrostatic discharge (ESD) protection circuits using 0.18 [Formula: see text]m CMOS technology is presented in this paper. Low-parasitic silicon-controlled rectifier (SCR) devices are co-designed with the LNA in the form of [Formula: see text]-parameters, and a new cascaded L-match input network is proposed to reduce the parasitic effects of them on the input matching. To improve linearity performance, an optimized multiple-gated transistors method (MGTR) is proposed and applied to the third stage, which takes both transconductance [Formula: see text] and third-order nonlinear coefficient [Formula: see text] into consideration. The measured results show a wide input matching across 2–8 GHz and a high third-order input intercept point (IIP3) of −12.8 dBm. The peak power gain can achieve 29.1 dB, and the noise figure (NF) is in a range of 3.1–3.6 dB within the 3-dB bandwidth. Using SCR devices with low parasitic capacitance of [Formula: see text]80 fF and robust gate-driven power clamps, a 6.5-kV human body mode (HBM) ESD performance is obtained.

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Zhang, Jin Fang, Hou Jin Chen i Lei Fan. "Discussion on Key Issues of High-Resolution Panel Driver IC Design". Advanced Materials Research 1006-1007 (sierpień 2014): 972–75. http://dx.doi.org/10.4028/www.scientific.net/amr.1006-1007.972.

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The driver IC is a core device to achieve switching and display control function for the liquid crystal display panel, and high definition is one of the important development directions. There are special requirements in IC design, manufacturing, and downstream packaging and so on. Some key issues in the design and manufacture process, such as the high frequency input interface, the voltage conversion, data conversion, ADC and operational amplifier, low power design, EMI and ESD protection, are discussed for the high resolution panel driver IC. The trend and development in the near future are also forecasted at the end of the article.

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Ker, Ming-Dou, i Wei-Jen Chang. "Overview on ESD protection design for mixed-voltage I/O interfaces with high-voltage-tolerant power-rail ESD clamp circuits in low-voltage thin-oxide CMOS technology". Microelectronics Reliability 47, nr 1 (styczeń 2007): 27–35. http://dx.doi.org/10.1016/j.microrel.2006.03.012.

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Guang, Yang, Bin Yu i Huang Hai. "Design of a High Performance CMOS Bandgap Voltage Reference". Advanced Materials Research 981 (lipiec 2014): 90–93. http://dx.doi.org/10.4028/www.scientific.net/amr.981.90.

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Bandgap voltage reference, to provide a temperature and power supply insensitive output voltage, is a very important module in the analog integrated circuits and mixed-signal integrated circuits. In this paper, a high performance CMOS bandgap with low-power consumption has been designed. It can get the PTAT (Proportional to absolute temperature) current, and then get the reference voltage. Based on 0.35μm CMOS process, using HSPICE 2008 software for circuit simulation, the results showed that , when the temperature changes from -40 to 80 °C, the proposed circuit’s reference voltage achieve to 1.2V, temperature coefficient is 3.09ppm/°C. Adopt a series of measures, like ESD protection circuit, in layout design. The ultimately design through the DRC and LVS verification, and the final layout size is 700μm * 560μm.

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Lan, Jingchao, Danfeng Zhai, Yongzhen Chen, Zhekan Ni, Xingchen Shen, Fan Ye i Junyan Ren. "A 2.5-GS/s Four-Way-Interleaved Ringamp-Based Pipelined-SAR ADC with Digital Background Calibration in 28-nm CMOS". Electronics 10, nr 24 (20.12.2021): 3173. http://dx.doi.org/10.3390/electronics10243173.

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A 2.5-GS/s 12-bit four-way time-interleaved pipelined-SAR ADC is presented in 28-nm CMOS. A bias-enhanced ring amplifier is utilized as the residue amplifier to achieve high bandwidth and excellent power efficiency compared with a traditional operational amplifier. A high linearity front-end is proposed to alleviate the non-linearity of the diode for ESD protection in the input PAD. The embedded input buffer can suppress the kickback noise at high input frequencies. A blind background calibration based on digital-mixing is used to correct the mismatches between channels. Additionally, an optional neural network calibration is also provided. The prototype ADC achieves a low-frequency SNDR/SFDR of 51.0/68.0 dB, translating a competitive FoMw of 0.48 pJ/conv.-step at 250 MHz input running at 2.5 GS/s.

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Joo, Ji-Eun, Myung-Jae Lee i Sung Min Park. "A CMOS Optoelectronic Receiver IC with an On-Chip Avalanche Photodiode for Home-Monitoring LiDAR Sensors". Sensors 21, nr 13 (25.06.2021): 4364. http://dx.doi.org/10.3390/s21134364.

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This paper presents an optoelectronic receiver (Rx) IC with an on-chip avalanche photodiode (APD) realized in a 0.18-mm CMOS process for the applications of home-monitoring light detection and ranging (LiDAR) sensors, where the on-chip CMOS P+/N-well APD was implemented to avoid the unwanted signal distortion from bondwires and electro-static discharge (ESD) protection diodes. Various circuit techniques are exploited in this work, such as the feedforward transimpedance amplifier for high gain, and a limiting amplifier with negative impedance compensation for wide bandwidth. Measured results demonstrate 93.4-dBW transimpedance gain, 790-MHz bandwidth, 12-pA/√Hz noise current spectral density, 6.74-mApp minimum detectable signal that corresponds to the maximum detection range of 10 m, and 56.5-mW power dissipation from a 1.8-V supply. This optoelectronic Rx IC provides a potential for a low-cost low-power solution in the applications of home-monitoring LiDAR sensors.

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Tracy, Leslie, i Praveen Kumar Sekhar. "Design and Testing of a Low Voltage Solid-State Circuit Breaker for a DC Distribution System". Energies 13, nr 2 (10.01.2020): 338. http://dx.doi.org/10.3390/en13020338.

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In this study, a low voltage solid-state circuit breaker (SSCB) was implemented for a DC distribution system using commercially available components. The design process of the high-side static switch was enabled through a voltage bias. Detailed functional testing of the current sensor, high-side switch, thermal ratings, analog to digital conversion (ADC) techniques, and response times of the SSCB was evaluated. The designed SSCB was capable of low-end lighting protection applications and tested at 50 V. A 15 A continuous current rating was obtained, and the minimum response time of the SSCB was nearly 290 times faster than that of conventional AC protection methods. The SSCB was implemented to fill the gap where traditional AC protection schemes have failed. DC distribution systems are capable of extreme faults that can destroy sensitive power electronic equipment. However, continued research and development of the SSCB is helping to revolutionize the power industry and change the current power distribution methods to better utilize clean renewable energy systems.

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Kolesov, L. M., i V. V. Mozhzhukhina. "Designing of a distance protection stage based on data on branched line supply end currents". Vestnik IGEU, nr 4 (2019): 44–53. http://dx.doi.org/10.17588/2072-2672.2019.4.044-053.

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At present, in 110–220 kV transmission lines the problem of interphase short-circuits in the long-distance backup protection zone, in most cases, is solved by a backup level of current or distance protection. The existing protection solutions for lines with branching are based on the use of special high-voltage equipment, various current components and their ratios, a virtual resistance relay; on the control of emergency and orthogonal current components with adaptive braking and signal correction as well as with correction of the response characteristics according to the data on the voltage change and the state of the switching devices of the main substation. A number of developments are aimed at increasing the sensitivity of back-up protection of branch substations by changing the connection circuit, improving the response characteristics and refining the method for selecting the settings. However, these protection solutions in many cases do not provide the required sensitivity during short circuits on the low voltage side of a low-power branch transformer. All this means that an urgent problem to be solved is developing an algorithm for the operation of backup protection, providing the required sensitivity to short circuits on the low voltage side of the branch transformer. Analytical methods and simulation in the Simulink and SimPowerSystems packages of the Matlab modeling system were used to determine the impedance measurement of the distance protection measuring element. A mathematical model of the lumped-parameter line was used. When deriving analytical expressions, the impedances of the positive and negative sequences were assumed to be equal. Analytical expressions were obtained for determining the impedance measurement of the proposed and existing distance protection during phase-to-phase short-circuits appearing after a branch transformer and under load conditions. The studies have shown that the proposed distance protection has the required sensitivity to short circuits on the low voltage side of the branch transformer and the necessary detuning from load modes. The characteristics and methods for selecting response parameters of the additional stage of distance protection were determined using information on the currents of the line supply ends. The use of an additional distance protection stage developed by the authors based on the sum of currents of the line supply ends can ensure the required sensitivity to phase-to-phase short circuits on the low voltage side of the branch transformer with a star-delta connection circuit and solve the problem of distant backup protection of low power branch substations. The reliability of the data obtained is confirmed by the correspondence of the results of the analytical research and simulation modeling.

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Zuo, Liang, S. K. Islam, M. A. Huque, C. Su, B. J. Blalock i L. M. Tolbert. "A Universal BCD-on-SOI Based High Temperature Short Circuit Protection for SiC Power Switches". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (1.01.2010): 000349–54. http://dx.doi.org/10.4071/hitec-lzuo-tha15.

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In recent years, the rapid increase in the market for hybrid electric vehicles has generated great demand for low-cost, high-volume, high-temperature power converters that can work in harsh environment (temperature ≥ 150°C) conditions. Most of the commercially available power semiconductor devices and associated control electronics are rated for maximum of 85°C ambient temperature. Under this circumstance, wide bandgap (WBG) semiconductors have become a better alternative due to their ability to operate at much higher temperatures (≥500°C) than conventional bulk silicon based devices. As with any other power devices, SiC switches also require fault detection and protection mechanisms for their reliable application to real systems. One severe fault situation is the short circuit at the load end, which can cause very high surge currents that flow through the power switches. Quick detection and removal of the short circuit fault current by external circuitry is required to protect the power switch as well as the power converter module. This work presents a high-temperature (≥200°C), high-voltage short circuit protection (SCP) for SiC power devices. The circuit is designed using a resistor sensing method to provide protections for both “normally ON” and “normally OFF” SiC FET switches. A rail-to-rail input comparator is employed to ensure that the circuit operates under different power supply levels. The prototype circuit is implemented using a 0.8-micron, 2-poly, and 3-metal BCD-on-SOI process. The die size for the protection circuit is 0.52 mm2 (845 μm × 612 μm). The circuit has been successfully tested up to 200°C ambient temperature under power supplies ranging from 10 V to 30 V without any heat sink or cooling mechanism.

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Jiang, Wenqian, Zhou Yang, Zhenglei Zhou i Jueyu Chen. "Lightweight Data Security Protection Method for AMI in Power Internet of Things". Mathematical Problems in Engineering 2020 (2.11.2020): 1–9. http://dx.doi.org/10.1155/2020/8896783.

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Aiming at the security problems caused by the access of a large number of new advanced metering system (AMI) equipment and the rapid growth of new business data interaction volume and interaction frequency, a lightweight data security protection method for power Internet of things (IoT) is proposed. Firstly, based on the “cloud-edge-end” AMI system architecture, a multilevel anonymous authentication method is proposed to reduce the complexity of low-end equipment access without reauthentication when smart meters and other devices access the system. Then, when fully homomorphic encryption is used for data encryption transmission, the lightweight packet recombination protocol is introduced, the lightweight hash function is used to reduce the calculation cost, and the sliding address window mechanism is used to reduce the packet loss rate. Finally, improved secure multiparty computing (SMPC) is used to achieve frequency hopping data aggregation, using shared key to calculate local shared value for key update, reducing data interaction between massive devices and AMI cloud security server, and improving broadband utilization in data aggregation process. The experiment results indicate that the proposed method obtained better utilization in bandwidth and shorter average data collection completion time. Besides, the proposed method can ensure the information security in the interaction process.

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Sung, Guo-Ming, Chao-Kong Chung, Yu-Jen Lai i Jin-Yu Syu. "Small-Area Radiofrequency-Energy-Harvesting Integrated Circuits for Powering Wireless Sensor Networks". Sensors 19, nr 8 (12.04.2019): 1754. http://dx.doi.org/10.3390/s19081754.

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This study presents a radiofrequency (RF)-energy-harvesting integrated circuit (IC) for powering wireless sensor networks with a wireless transmitter with an industrial, scientific, and medical (ISM) of 915 MHz. The proposed IC comprises an RF-direct current (DC) rectifier, an over-voltage protection circuit, a low-power low-dropout (LDO) voltage regulator, and a charger control circuit. In the RF-DC rectifier circuit, a six-stage Dickson voltage multiplier circuit is used to improve the received RF signal to a DC voltage by using native MOS with a small threshold voltage. The over-voltage protection circuit is used to prevent a high-voltage breakdown phenomenon from the RF front-end circuit, particularly for near-field communication. A low-power LDO regulator is designed to provide stable voltage by using zero frequency compensation and a voltage-trimming feedback. Charging current is amplified N times by using a current mirror to rapidly and stably charge a battery in the proposed charger control circuit. The obtained results revealed that the maximum power conversion efficiency of the proposed RF-energy-harvesting IC was 40.56% at an input power of −6 dBm, an output voltage of 1.5 V, and a load of 30 kΩ. A chip area of the RF-energy-harvesting IC was 0.58 × 0.49 mm2, including input/output pads, and power consumption was 42 μW.

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Narula, Swati, Bhim Singh, G. Bhuvaneswari i Rahul Pandey. "A Power Factor Corrected SMPS with Improved Power Quality for Welding Applications". International Journal of Emerging Electric Power Systems 16, nr 2 (1.04.2015): 181–93. http://dx.doi.org/10.1515/ijeeps-2014-0157.

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Abstract This paper presents the analysis, design and implementation of a power factor corrected Arc Welding Power Supply (AWPS) with a boost converter at the front end and three full-bridge (FB) converters connected in parallel at the load end. The modular arrangement of the FB converters offers several meritorious features like usage of power devices with comparatively lower voltage and current ratings, ease of power expandability, easy maintenance, etc. The boost converter operates in continuous conduction mode minimizing the input current ripple and leading to the lowest RMS current thereby improving the input power quality. Individual control loops are designed for each power stage. A dual loop control scheme is employed to incorporate over-current limit on the proposed AWPS which ensures excellent weld bead quality. The proposed AWPS is implemented to validate its performance over a wide range of line/load variations. Test results confirm its fast parametrical response to load and source voltage variations and over-current protection leading to improved welding performance and weld bead quality. The system is found to perform extremely well with very low input current THD and unity power factor, adhering to international power quality norms.

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Li, Yuancheng, Longqiang Ma i Xiang Li. "IDR Privacy Protection Based on Database Digital Watermarking". Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering) 13, nr 1 (20.02.2020): 110–18. http://dx.doi.org/10.2174/2352096511666181119125538.

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Background: In smart grid, a flexible demand response management mechanism is used to achieve the purpose of stabilizing the power grid, optimizing the power market, and rationally allocating resources. There are two types of demand response management in the demand response management mechanism: Price-based Demand Response (PDR) and Incentive-based Demand Response (IDR). Methods: The paper studied the problem of privacy protection in IDR, and proposed a method based on database digital watermark to protect user privacy. Segment the time, and then embed watermarks in the user’s consumption data of each time segment. At the end of each billing period, extract the watermarks from the data of each segment time, and then send the total consumption data of the user of this billing period to the power supply company. The power supply company only knows the total consumption data of the user, the company does not have any information regarding the users consumption data which can prevent them from snooping the user privacy. The proposed digital watermarking algorithm is based on K-Means clustering and wavelet transform, the K-Means algorithm is used to cluster the database tuple data, and then wavelet transform is carried out on the available attribute values within the clusters, and the watermark is embedded in the transformed attribute values. Results: The experimental results show that the proposed method is more robust when the database is under subset deletion attacks, subset substitution attacks and subset addition attacks. Besides, the computational cost is very low. Conclusion: The proposed digital watermark algorithm can embed the watermarks more decently and overcome the burden of watermark embedding caused by statistical feature control. Besides, the proposed method can protect the user privacy better than the other two methods.

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Bykovskiy, Sergey V. "Microwave cyclotron protective devices for radar receivers". Radioelectronics. Nanosystems. Information Technologies. 13, nr 3 (30.09.2021): 297–302. http://dx.doi.org/10.17725/rensit.2021.13.297.

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Brief overview of the latest developments of microwave cyclotron protective devices, their functioning and parameters is given. It is noted that these devices have a number of important advantages over other types of protective devices: they are autonomous, provide no peak of microwave power leaking to the output, frequency filtering and low noise figure (0.7-1.2 dB). The upper limit of the linearity of cyclotron protective devices in the signal transmission mode when the transmission coefficient is compressed by 1 dB is ~ 1 mW. The devices can operate with an input pulse power of up to 10 kW or more, while the attenuation of the input power in the protection mode is more than 60-80 dB. The recovery time of parameters after the end of a powerful input pulse is 10-20 ns. For devices of the 3-cm wavelength range, experimental data are given on the recovery time, the upper limit of linearity, attenuation of the input power in the protection mode, and filtration characteristics.

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Halloran, M. Elizabeth, Ira M. Longini i Peter B. Gilbert. "Designing a Study of Correlates of Risk for Ebola Vaccination". American Journal of Epidemiology 189, nr 8 (23.01.2020): 747–54. http://dx.doi.org/10.1093/aje/kwaa001.

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Abstract The recombinant vesicular stomatitis virus (rVSV) Ebola vaccine was shown to be very efficacious in a novel ring vaccination trial in Guinea. However, no correlates of vaccine protection have been established for Ebola vaccines. Several Ebola vaccine candidates are available, but conducting randomized trials of additional candidates in outbreaks is difficult. Establishing correlates of vaccine protection is essential. Here we explore power and sample-size calculations to evaluate potential correlates of risk during an Ebola vaccination campaign in an outbreak. The method requires that a blood draw be made at a predetermined time after vaccination. The statistical analysis estimates the relative risk of the Ebola endpoint occurring from after the blood draw through to the end of follow-up, contrasting vaccine recipients with different values of the immune response marker. The analysis can be done assuming a trichotomous or continuous marker. Under certain assumptions, at an overall vaccine efficacy of 75%, 50 Ebola endpoints in the vaccinees provided good power. At an overall vaccine efficacy of 90%, 20 Ebola endpoints gave good power. Power was highest when more vaccinees were in the high- and low-responder groups versus the middle group and when vaccine efficacy differed the most between the high- and low-responder groups.

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Nobakhti, Seyyed Mohammad, Abbas Ketabi i Miadreza Shafie-khah. "A New Impedance-Based Main and Backup Protection Scheme for Active Distribution Lines in AC Microgrids". Energies 14, nr 2 (6.01.2021): 274. http://dx.doi.org/10.3390/en14020274.

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Microgrids active characteristics such as grid-connected or islanded operation mode, the distributed generators with an intermittent nature, and bidirectional power flow in active distribution lines lead to malfunction of traditional protection schemes. In this article, an impedance-based fault detection scheme is proposed as the main protection of microgrids by applying the proposed equivalent circuits for doubly-fed lines. In this scheme, relay location data and positive sequence voltage absolute value of the other end of the line are used. It can detect even high impedance faults in grid-connected and islanded modes. It is robust against load and generation uncertainties and network reconfigurations. Low sampling rate and minimum data exchange are among the advantages of the proposed scheme. Moreover, a backup protection scheme based on the conductance variations is suggested. No requirement for the communication link is a distinguished advantage of the proposed backup protection scheme. The proposed schemes have been simulated using PSCAD and MATLAB software and the results confirmed their validity.

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Lv, Yanheng. "Research on Optimization of Distribution Network based on Power Electronic Transformer". Highlights in Science, Engineering and Technology 35 (11.04.2023): 57–62. http://dx.doi.org/10.54097/hset.v35i.7030.

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As the core equipment of hybrid microgrid, power electronic transformer is a new type of multifunctional transformer which integrates power electronic technology, information communication technology and control protection technology. On the background of the Beijing Low-Carbon Winter Olympics Smart Grid Demonstration Project, this paper proposed an AC/DC hybrid microgrid topology with dual-end power supply based on power electronic transformer. Moreover, a coordinated optimization control for AC/DC hybrid microgrid based on power electronic transformer is studied. The content of the paper mainly includes: The common topology of power electronic transformer is studied, and a three stage four-port power electronic transformer is proposed according to the demand of demonstration project. The interface converter topology structure and control method of distributed generation and energy storage in hybrid microgrid are analyzed, and the system model of hybrid microgrid is established. Simulation results show that MPPT control can maximize the power output of distributed generation, and piecewise droop control can realize seamless switching between power control and voltage control in the grid-tied or autonomous mode.

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Hussain, Noor, Yousef Khayat, Saeed Golestan, Mashood Nasir, Juan C. Vasquez, Josep M. Guerrero i Kimmo Kauhaniemi. "AC Microgrids Protection: A Digital Coordinated Adaptive Scheme". Applied Sciences 11, nr 15 (30.07.2021): 7066. http://dx.doi.org/10.3390/app11157066.

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A significant challenge for designing a coordinated and effective protection architecture of a microgrid (MG) is the aim of an efficient, reliable, and fast protection scheme for both the grid-connected and islanded modes of operation. To this end, bidirectional power flow, varying short-circuit power, low voltage ride-through (LVRT) capability, and the plug-and-play characteristics of distributed generation units (DGUs), which are key issues in a MG system must be considered; otherwise, a mal-operation of protection devices (PDs) may occur. In this sense, a conventional protection system with a single threshold/setting may not be able to fully protect an MG system. To tackle this challenge, this work presents a comprehensive coordinated adaptive protection scheme for AC MGs that can tune their protection setting according to the system states and the operation mode, and is able to switch the PDs’ setting. In the first step of the proposed adaptive algorithm, an offline setting will be adopted for selective and sensitive fault detection, isolation, and coordination among proposed protective modules. As any change in the system is detected by the proposed algorithm in the online step, a new set of setting for proposed modules will be performed to adapt the settings accordingly. In this way, a new set of settings are adapted to maintain a fast and reliable operation, which covers selective, sensitive, and adaptive requirements. The pickup current (Ip) and time multiple settings (TMS) of directional over-current relays (DOCR), as well as coordinated time delays for the proposed protection scheme for both of the grid-connected and islanded modes of operation, are calculated offline. Then, an online adaptive protection scheme is proposed to detect different fault types in different locations. The simulation results show that the proposed method provides a coordinated reliable solution, which can detect and isolate fault conditions in a fast, selective and coordinated adaptive pattern.

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Mohamed, Manal, Eunjung Jo, Nourelhuda Mohamed, Minhee Kim, Jeong-dae Yun i Jae Gwan Kim. "Development of an Integrated EEG/fNIRS Brain Function Monitoring System". Sensors 21, nr 22 (19.11.2021): 7703. http://dx.doi.org/10.3390/s21227703.

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In this study, a fully integrated electroencephalogram/functional near-infrared spectroscopy (EEG/fNIRS) brain monitoring system was designed to fulfill the demand for a miniaturized, light-weight, low-power-consumption, and low-cost brain monitoring system as a potential tool with which to screen for brain diseases. The system is based on the ADS1298IPAG Analog Front-End (AFE) and can simultaneously acquire two-channel EEG signals with a sampling rate of 250 SPS and six-channel fNIRS signals with a sampling rate of 8 SPS. AFE is controlled by Teensy 3.2 and powered by a lithium polymer battery connected to two protection circuits and regulators. The acquired EEG and fNIRS signals are monitored and stored using a Graphical User Interface (GUI). The system was evaluated by implementing several tests to verify its ability to simultaneously acquire EEG and fNIRS signals. The implemented system can acquire EEG and fNIRS signals with a CMRR of −115 dB, power consumption of 0.75 mW/ch, system weight of 70.5 g, probe weight of 3.1 g, and a total cost of USD 130. The results proved that this system can be qualified as a low-cost, light-weight, low-power-consumption, and fully integrated EEG/fNIRS brain monitoring system.

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Zhao, Hailong, Dingfei Yue i Bing Zhang. "1.3: The Technology and Development of Laser Display Optical Screens". SID Symposium Digest of Technical Papers 54, S1 (kwiecień 2023): 21–26. http://dx.doi.org/10.1002/sdtp.16210.

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Laser display has the advantages of high brightness, wide color gamut, long lifetime, low power consumption, and better eye protection, and will become the mainstream of the next generation of high‐end display; This paper mainly expounds the structure and principle of Fresnel optical screen, black grid optical screen and white plastic frame screen electric pull screen for laser display.Besides, The three kinds of optical screens are also compared in structure, material, performance and applications . Finally, the development trend of mainstream anti‐light screens is prospected.

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Kim, Geun Sik, Kai Liu, Flynn Carson, Seung Wook Yoon i Meenakshi Padmanathan. "Advanced SiP Packaging Technologies of IPD for Mobile Applications". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, DPC (1.01.2010): 1–20. http://dx.doi.org/10.4071/2010dpc-wp31.

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IPD technology was originally developed as a way to replace bulky discrete passive components, but it¡¯s now gaining popularity in ESD/EMI protection applications, as well as in RF, high-brightness LED silicon sub-mounts, and digital and mixed-signal devices. Already well known as a key enabler of system-in-packages (SiPs), IPDs enable the assembly of increasingly complete and autonomous systems with the integration of diverse electronic functions such as sensors, RF transceivers, MEMS, power amplifiers, power management units, and digital processors. The application area for IPD will continue to evolve, especially as new packaging technology, such as flipchip, 3D stacking, wafer level packaging become available to provide vertical interconnections within the IPD. New applications like silicon interposers will become increasingly significant to the market. Currently the IPD market is being driven primarily by RF or wireless packages and applications including, but not limited to, cell phones, WiFi, GPS, WiMAX, and WiBro. In particular, applications and products in the emerging RF CMOS market that require a low cost, smaller size, and high performance are driving demand. In order to get right products in size and performance, packaging design and technology should be considered in device integration and implemented together in IPD designs. In addition, a comprehensive understanding of electrical and mechanical properties in component and system level design is important. This paper will highlight some of the recent advancements in SiP technology for IPD and integration as well as what is developed to address future technology requirements in IPD SiP solutions. The advantage and applications of SiP solution for IPD will be presented with several examples of IPD products. The design, assembly and packaging challenges and performance characteristics will be also discussed.

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31

Chen, Shen Li, i Wen Ming Lee. "Power MOSFET Devices and ESD Reliability Evaluations". Applied Mechanics and Materials 268-270 (grudzień 2012): 1361–64. http://dx.doi.org/10.4028/www.scientific.net/amm.268-270.1361.

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The electrostatic discharge (ESD) reliabilities in different power MOSFETs will be investigated in this paper. From the experimental results, ESD zap pulses at the gate terminal will cause electrons or holes trap in the gate oxide and loss the Si-SiO2 interface integrity, especially for the 100V nDEMOS, 200V nDEMOS, and IRF640, in which they do not have any ESD protection strategy. Electrons or holes trapped in the gate SiO2 layer will be caused the transconductance (Gm) or threshold voltage (Vth) of a MOSFET increasing or reduction, and which is resulted from electron mobility degradation. The RFW2N06RLE and RLD03N06CLE power VDMOS ICs, which with different kinds of ESD protection circuit, are less influenced by ESD pulses experimentally.

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32

Tenti, Paolo, i Tommaso Caldognetto. "Generalized Control of the Power Flow in Local Area Energy Networks". Energies 15, nr 4 (15.02.2022): 1416. http://dx.doi.org/10.3390/en15041416.

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Local area energy networks (E-LANs) are cyber-physical systems whose physical layer is a meshed low-voltage microgrid fed by a multiplicity of sources, i.e., utilities, energy storage systems, and distributed power sources. The cyber layer includes distributed measurement, control, and communication units, located at end-user premises, as well as centralized supervision and dispatchment control. As compared with standard microgrid, the E-LAN encompasses the ability for end-users to actively contribute to the operation of the microgrid while acting as independent energy traders in the electrical market. Operational goals include active contribution of end-users to power sharing, loss reduction, voltage stability, demand response, fault identification and clearing, isolation of sub-grids for maintenance, islanding, and black start. Economic goals include the possibility, for each end-user, to decide in every moment, based on convenience, how his energy and power capacity is shared with other users, e.g., for demand response or to trade energy in the electric market. This paper introduces a comprehensive theoretical approach of E-LAN control to achieve all the above operational goals while providing a high level of dynamic protection against faults or other events affecting the system functionality, e.g., overloads or fast transients. It shows that meshed microgrids are the necessary infrastructure to implement the desired functionalities.

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33

Chen, Shen Li, i Chi Ling Chu. "ESD Robustness Designs for the HV Power DEMOS". Applied Mechanics and Materials 271-272 (grudzień 2012): 1286–90. http://dx.doi.org/10.4028/www.scientific.net/amm.271-272.1286.

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Two kinds of efficient electrostatic discharge (ESD) protection circuits in lateral drain extended MOSFETs (DEMOSFETs) will be designed and investigated in this paper. One kind of these test samples is fabricated with an SCR structure, which has the lowest turned-on resistance when it is triggered by a high voltage of ESD event. The SCR circuit is the most efficient of all protection devices in terms of ESD performance per unit area. Furthermore, the other type of these DUTs is an SCR with RC-triggered structure, which will have a small trigger voltage (Vt1) under ESD event, and then it obtains a good ESD immunity level.

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Xu, Yan Hui, i Dan Tong Zhang. "Research on One Kind of Intellectualization High Accuracy Digital Adjustment Direct Source". Applied Mechanics and Materials 599-601 (sierpień 2014): 608–11. http://dx.doi.org/10.4028/www.scientific.net/amm.599-601.608.

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The power source uses the digital adjustment, the closed loop real-time monitoring.The output precision is vary high. It also has both the dual over-load protection and alarm, which is suitable especially in each kind situation of the high accuracy request.This design intellectualization direct-current power supply uses the self-restraint keyboard entry. The system of intellectualization high accuracy digital adjustmen direct source contains D/A module and A/D module . D/A module adopts low-priced 8 bits DA chip. DAC0832 is a electric current exports type 8 bits D/A converter , adopting to reversing T type resistor network. The ADC0809 chip,with 8 bits AD changes ,accomplishes the data collect function and makes up into the closed cycle circuit. The inside of ADC0809 has output lock-memory implement , it can link up with AT89C51 monolithic machine directly. The stabilivolt outputed and over-stream protection module adopts the in-line stabilivolt circuit which has used three end integrated stabilivolt chip , adopting LM317 and LM337 series three hold adjustable stabilivolt tube., LM317 is a three end adjustable voltage stabilizer integrated circuit of USA country semiconductor company.The single-chip microcomputer receives voltage value information of keyboard input, and carries on processing.

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35

Unnikrishnan, Kavita, Avireni Srinivasulu i Surada Musala. "Power Rail ESD Protection Design Methodology Using Voltage-Gain Inverter Based Feedback Technology". ECS Transactions 107, nr 1 (24.04.2022): 19385–94. http://dx.doi.org/10.1149/10701.19385ecst.

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In power rail, electrostatic discharge (ESD) is one of the assured issues to be faced. This paper intended to have a voltage gain inverter-based response technology for power rail ESD protection. This paper proposes a power MOSFET to discharge ESD current with 10 ns RC time constant for triggering and transmission gate based clamp is to keep it on until ESD event, which is 28% more efficient than the conventional clamp. The proposed clamp can endure 4500V of HBM (Human Body Model) pulse and also suitable for Charged-Device Model (CDM) protection. Here, LTspice software is used to check out the ESD performance of the transmission gate-based clamp.

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36

Chen, Shen Li, i Chien Chin Tseng. "The SCR Protection Circuit Evaluation in HV DEMOS Devices". Applied Mechanics and Materials 256-259 (grudzień 2012): 2923–26. http://dx.doi.org/10.4028/www.scientific.net/amm.256-259.2923.

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The electrostatic discharge (ESD) failure of power drain-extended MOS (DEMOS) devices, the protection circuit SCR, and a DEMOS with SCR protection circuit will be investigated in this paper. The ESD immunity of the DEMOS was very poor under the human-body model (HBM) testing. Here we discuss how to design an ESD good SCR device. Eventually, the ESD immunity of DEMOS test sample with an SCR circuit can significantly improve device ESD performance.

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37

Chen, Shen Li, i Chien Chin Tseng. "The SCR Protection Circuit Evaluation in HV DEMOS Devices". Advanced Materials Research 614-615 (grudzień 2012): 1438–41. http://dx.doi.org/10.4028/www.scientific.net/amr.614-615.1438.

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The electrostatic discharge (ESD) failure of power drain-extended MOS (DEMOS) devices, the protection circuit SCR, and a DEMOS with SCR protection circuit will be investigated in this paper. The ESD immunity of the DEMOS was very poor under the human-body model (HBM) testing. Here we discuss how to design an ESD good SCR device. Eventually, the ESD immunity of DEMOS test sample with an SCR circuit can significantly improve device ESD performance.

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38

Soldner, W., M. Streibl, U. Hodel, M. Tiebout, H. Gossner, D. Schmitt-Landsiedel, J. H. Chun, C. Ito i R. W. Dutton. "RF ESD protection strategies: Codesign vs. low-C protection". Microelectronics Reliability 47, nr 7 (lipiec 2007): 1008–15. http://dx.doi.org/10.1016/j.microrel.2006.11.007.

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39

Wang, Jing Min, i Chun Ting Lin. "Employing Ceramic Products to Design an Electrostatic Discharge Protection for High-Speed Signal Lines". Applied Mechanics and Materials 389 (sierpień 2013): 205–10. http://dx.doi.org/10.4028/www.scientific.net/amm.389.205.

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With the advance of microelectronics technologies and integrated circuits (ICs) processes, the electrostatic discharge (ESD) has become one of the most important reliability issues in IC products. But treating the ESD-related problems is a real challenge. The paper focuses on the influence of the using of Universal Serial Bus (USB) in plugging and/or unplugging impact arisen from ESD and also proposes an ESD protection design to improve the ESD robustness. This work utilizes off-chip protection along with the commercial ceramic products to achieve effective ESD protection. The impact of the ESD stress applied at the connector pins of USB is evaluated. The protection design for the high-speed signal lines is easily to implement and achieves the following attractive features: (1) Power trace protection, (2) Signals traces protection, (3) GND protection, and (4) Shield protection. Numerous tests have been made to demonstrate the effectiveness of the work.

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40

Zhang, Yinglu, Zhenzhu Xi, Xingpeng Chen, Honglan Wei, Long Huang i Wei Xiao. "Design of Analog Front-end Circuit for Audio-frequency Magnetotelluric Instrument". Journal of Environmental and Engineering Geophysics 23, nr 3 (wrzesień 2018): 305–18. http://dx.doi.org/10.2113/jeeg23.3.305.

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High-performance audio-frequency magnetotelluric (AMT) instrument is one means of obtaining high-quality electromagnetic (EM) data. To improve the ability of AMT system to obtain high-quality data, this paper presents a design for a high-performance analog front-end circuit for AMT instrument. It mainly consists of the input protection, preamplifier, passive high pass filter, power frequency notch filter, programmable amplifier, and active low pass filter. In addition, this paper proposes a design of low-noise, high-performance preamplifier, which improves the common-mode rejection ratio (CMRR) of analog front-end circuit and effectively enhances the signal-to-noise ratio (SNR) of the circuit. The front-end circuit utilized two-stage twin-T notch filter to effectively suppress the strong interference of fundamental component of power frequency. Also, it used signal relays to control circuit gain and selection of cutoff frequency of anti-aliasing filter, resulting in the improvement of the capability of the analog-to-digital Converter (ADC) to distinguish weak EM signal. The measured results of the electric field and magnetic field channel showed that: 1) The circuit works in frequency range of 1 Hz∼100 kHz; 2) The CMRR values of the preamplifier of electric field channel at low frequencies (1 Hz∼1 kHz) are 111 dB and 97 dB when the gains are 20 dB and 6 dB respectively; 3) The maximum attenuation fundamental power frequency can reach −39.46 dB and −39.04 dB respectively; 4) The total harmonic distortion rate at 1 kHz is 0.022% and 0.029% respectively; 5) The input noise levels of electric field channel are 12.67nV / [Formula: see text] @10Hz and 8.15V / [Formula: see text] @1kHz, while the input noise levels of magnetic field channel are 8.97nV / [Formula: see text] @10Hz and 6.16V / [Formula: see text] @1kHz; and 6) In conclusion, the analog front-end circuit is superior to meet the requirements of the AMT methods, and provides a useful reference for the development of AMT instrument.

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41

Ezhov, V. S., N. E. Semicheva, A. P. Burtsev, V. I. Zenchenkov i D. A. Ermakov. "Study of the Process of Generation of Thermoelectricity in Low Grade Heat Recovery of Waste Gases". Proceedings of the Southwest State University 23, nr 2 (9.07.2019): 74–84. http://dx.doi.org/10.21869/2223-1560-2019-23-2-74-84.

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Purpose of research. The purpose of the study is to develop an experimental design of an integrated air heater, conduct and analyze experiments as well as to determine the main characteristics of a thermoelectric generator in low-grade heat recovery of waste gases.Methods. The experimental unit consists of two blocks – a thermoelectric generator operating on the principle of cross heat exchange for heat recovery with concurrent heating of the incoming air, which is supplied as a mixture to the burner device of the boiler unit; and an adsorber block filled with blast furnace slag for cleaning the waste gases from nitrogen, sulphur and carbon oxides. To achieve these goals, the work is based on the proposed thermoelectricity effect, which works on the principle of converting thermal energy into electricity at a temperature difference between hot and cold junctions in thermoelectric sections consisting of two metals different in their electronegativity. At the same time, in an integrated air heater, the intensification of the process of adsorption of harmful components by granulated blast furnace slag takes place, which reduces the heat content and temperature of waste gases, reduces emissions of flue gases and, as a result, increases environmental safety of the area adjacent to the boiler. In particular, the study of countercurrent heat exchange in the design of the thermoelectric generator was carried out.Results. The main result of the research work is the development of an experimental design of an integrated air heater, an experimental technique and the determination of the main characteristics of the thermoelectricity generation process.Conclusion. The use of such an integrated air heater can improve the efficiency of heat-generating units of low, medium and high power installed in the central heating stations, multi-family and single-family houses. The gained electric power with the subsequent transformation can be used for power supply of automatiс equipment of boilers of low, medium and high power, and for power supply of the stations of cathodic protection against electrochemical corrosion of back-end surfaces formed as a result of the presence of water vapors in waste gases.

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42

Sponton, L., L. Cerati, G. Croce, F. Chrappan, C. Contiero, G. Meneghesso i E. Zanoni. "ESD protection structures for BCD5 smart power technologies". Microelectronics Reliability 41, nr 9-10 (wrzesień 2001): 1683–87. http://dx.doi.org/10.1016/s0026-2714(01)00188-3.

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Yao, Bin, Yijun Shi, Hongyue Wang, Xinbin Xu, Yiqiang Chen, Zhiyuan He, Qingzhong Xiao i in. "A Novel Bidirectional AlGaN/GaN ESD Protection Diode". Micromachines 13, nr 1 (15.01.2022): 135. http://dx.doi.org/10.3390/mi13010135.

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Despite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs. Therefore, there is still an urgent need for a bidirectional ESD protection diode to improve the ESD robustness of a GaN power system. In this study, an AlGaN/GaN ESD protection diode with bidirectional clamp capability was proposed and investigated. Through the combination of two floating gate electrodes and two pF-grade capacitors connected in parallel between anode or cathode electrodes and the adjacent floating gate electrodes (CGA (CGC)), the proposed diode could be triggered by a required voltage and possesses a high secondary breakdown current (IS) in both forward and reverse transient ESD events. Based on the experimental verification, it was found that the bidirectional triggering voltages (Vtrig) and IS of the proposed diode were strongly related to CGA (CGC). With CGA (CGC) increasing from 5 pF to 25 pF, Vtrig and IS decreased from ~18 V to ~7 V and from ~7 A to ~3 A, respectively. The diode’s high performance demonstrated a good reference for the ESD design of a GaN power system.

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Bruzzi, Mara, Irene Cappelli, Ada Fort, Alessandro Pozzebon i Valerio Vignoli. "Development of a Self-Sufficient LoRaWAN Sensor Node with Flexible and Glass Dye-Sensitized Solar Cell Modules Harvesting Energy from Diffuse Low-Intensity Solar Radiation". Energies 15, nr 5 (22.02.2022): 1635. http://dx.doi.org/10.3390/en15051635.

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This paper aims to demonstrate the viability of energy harvesting for wide area wireless sensing systems based on dye-sensitized solar cells (DSSCs) under diffuse sunlight conditions, proving the feasibility of deploying autonomous sensor nodes even under unfavorable outdoor scenarios, such as during cloudy days, in the proximity of tall buildings, among the trees in a forest and during winter days in general. A flexible thin-film module and a glass thin-film module, both featuring an area smaller than an A4 sheet of paper, were initially characterized in diffuse solar light. Afterward, the protype sensor nodes were tested in a laboratory in two different working conditions, emulating outdoor sunlight in unfavorable lighting and weather to reconstruct a worst-case scenario. A Li-Po battery was employed as a power reserve for a long-range wide area network (LoRaWAN)-based sensor node that transmitted data every 8 h and every hour. To this end, an RFM95x LoRa module was used, while the node energy management was attained by exploiting a nano-power boost charger buck converter integrated circuit conceived for the nano-power harvesting from the light source and the managing of the battery charge and protection. A positive charge balance was demonstrated by monitoring the battery trend along two series of 6 and 9 days, thus allowing us to affirm that the system’s permanent energy self-sufficiency was guaranteed even in the worst-case lighting and weather scenario.

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45

Tu, Shan, Qi Zhou, Jian Liu Jian, Cong Qiang Ding i Shu Ming Wu. "Application Study on Low Vacuum Circulating Water Heat Supply of a 50 MW Turbine". Advanced Materials Research 953-954 (czerwiec 2014): 896–99. http://dx.doi.org/10.4028/www.scientific.net/amr.953-954.896.

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This topic mainly research the high back pressure heat supply technology of steam turbine generator unit and the correlation analysis of turbine under high back pressure operating condition. High back pressure heat supply is an energy saving technology developed in order to meet the requirements of energy saving and environmental protection. This technology can not only reduce the cold end losses to improve the thermal efficiency of power plant, but also decrease the energy loss and pollution emissions because it take the place of traditional heating boiler. High back pressure heat supply of steam turbine is to increase the quantity of air inlet and outlet as well as exhaust temperature through improving turbine back pressure. For condensing steam turbine unit of 50 MW studied in this article, back pressure of which rise to 0.032MPa from 0.0046MPa, and the exhaust temperature will increase to 70 °C respectively. Through the calculation of rated condition and variable condition, we can obtain the impact to the unit due to the change of back pressure, and for unit of 50 MW can reduce 30876.9 tons of standard coal consumption in a heating period. It can also decrease the emission of carbon dioxide, sulfur dioxide, smoke and ashes, which effect of energy saving and emission reducing is very obvious.

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46

Shih-Hung Chen, Ming-Dou Ker i Hsiang-Pin Hung. "Active ESD Protection Design for Interface Circuits Between Separated Power Domains Against Cross-Power-Domain ESD Stresses". IEEE Transactions on Device and Materials Reliability 8, nr 3 (wrzesień 2008): 549–60. http://dx.doi.org/10.1109/tdmr.2008.2002492.

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47

Horng, J. J., Y. K. Su, S. J. Chang, W. S. Chen i S. C. Shei. "GaN-Based Power LEDs With CMOS ESD Protection Circuits". IEEE Transactions on Device and Materials Reliability 7, nr 2 (czerwiec 2007): 340–46. http://dx.doi.org/10.1109/tdmr.2007.901059.

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48

Vozhik, Yu G., S. O. Maranda i P. I. Vitrukh. "Substantiation of technological parameters of equipment for application of plant protection products using multicopters". Mehanization and electrification of agricultural, nr 14(113) (2021): 43–56. http://dx.doi.org/10.37204/0131-2189-2021-14-5.

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Annotation Purpose. Improving the efficiency of field spraying and creating safe working conditions for maintenance personnel through the use of unmanned multicopters, the air jets from the propellers of which will not distort the flares of the sprayed solution of plant protection products (PPE). Methods. The method of analysis of variable time components of agricultural units is used. Results. Dependences of technical and operational indicators of technological equipment of a multicopter on this design and mode parameters and their rational values are received. Comparative data of multicopter and ground sprayers were obtained, which revealed the indisputable advantages of the former over the latter. Conclusions 1. One of the successful alternatives to ground sprayers is the use of unmanned aerial vehicles – multicopters, which, unlike ground vehicles, do not need to leave in the field among the plants technological tracks that reduce up to 5 % usable area and do not depend on soil and plant height. Due to the significant high working speed in comparison with ground means (from 3 m/s to 10 m/s) and practically absence of time for turns at the end of a run (3–5 s) one multicopter with width of capture of 10–12 m, can replace ground sprayer with a width of 50 m and five times the cost. 2. The rational structural and functional scheme of the technological equipment of the multicopter for plant protection must be similar to the ground sprayers of the frame construction, on the sides of which the screws of the multicopter are installed, and between them the spraying equipment. 3. Reducing the rate of application of PPE solution from low-volume (50 l/ha) to ultra-low-volume (10 l/ha) spraying increases productivity by only 1,3 times and significant complexity of the equipment. 4. Reducing battery time during multicopter operation from 180 minutes to 10 minutes reduces performance by only 10 %. 5. For low-volume spraying, a sufficient tank capacity for the PPE solution is 30 liters. 6. To increase productivity and reduce material costs for batteries, the multicopter must be equipped with a hybrid power plant with an internal combustion engine, which will recharge the battery to drive its propellers. 7. Increasing the capacity of the tank for the solution of PPE in ground sprayers from 3000 liters to 15000 liters is not economically feasible due to a slight (up to 10 %) increase in productivity, increased soil compaction and energy consumption. Keywords: agricultural multicopter, multicopter-sprayer, agricultural drone, liquid sprayers, ultra-low-volume spraying, parameters, modes.

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Martínez-Figueroa, G. de J., Felipe Córcoles-López i Santiago Bogarra. "FPGA-Based Smart Sensor to Detect Current Transformer Saturation during Inrush Current Measurement". Sensors 23, nr 2 (9.01.2023): 744. http://dx.doi.org/10.3390/s23020744.

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Current transformer saturation affects measurement accuracy and, consequently, protection reliability. One important concern in the case of overcurrent protections is the discrimination between faults and inrush current in power transformers. This paper presents an FPGA-based smart sensor to detect current transformer saturation, especially during inrush current conditions. Several methods have been proposed in the literature, but some are unsuitable for inrush currents due to their particular waveform. The proposed algorithm implemented on the smart sensor uses two time-domain features of the measured secondary current: the second-order difference function and the third-order statistic central moment. The proposed smart sensor presents high effectiveness and immunity against noise with accurate results in different conditions: different residual flux, resistive burdens, sampling frequency, and noise levels. The points at which saturation starts are detected with an accuracy of approximately 100%. Regarding the end of saturation, the proposed method detects the right ending points with a maximum error of a sample. The smart sensor has been tested on experimental online and real-time conditions (including an anti-aliasing filter) with accurate results. Unlike most existing methods, the proposed smart sensor operates efficiently during inrush conditions. The smart sensor presents high-speed processing despite its simplicity and low computational cost.

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Jiang, Yibo, Hui Bi i Hui Li. "Low trigger voltage bulk FinFET silicon controlled rectifier in nanotechnology". Modern Physics Letters B 32, nr 34n36 (30.12.2018): 1840072. http://dx.doi.org/10.1142/s0217984918400729.

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The bulk fin field-effect transistor (FinFET) has been the primary semiconductor technology in nanotechnology. To protect low supply voltage circuits based on FinFET, trigger voltage [Formula: see text] of the silicon controlled rectifier (SCR) which acts as electrostatic discharge (ESD) protection device should be lowered further. In this paper, in order to lower the [Formula: see text] an extra implant technique is proposed to form bridging well low trigger voltage FinFET SCR (FinFET BRLVTSCR). The experiments demonstrate that the trigger voltage can be lowered effectively. Moreover, the TCAD simulations bring an in-depth physical understanding of ESD current conduction and failure mechanism during ESD protection. Finally, the turn-on characteristic demonstrates proposed novel SCRs are fast and effective under TLP and very fast TLP (VFTLP) stress.

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Artykuły w czasopismach na temat „Low Power ESD Protection”

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