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Artykuły w czasopismach na temat "Light emitters in silicon"
Kittler, M., M. Reiche, T. Arguirov, W. Seifert i X. Yu. "Silicon-based light emitters". physica status solidi (a) 203, nr 4 (marzec 2006): 802–9. http://dx.doi.org/10.1002/pssa.200564518.
Pełny tekst źródłaHelm, M., J. M. Sun, J. Potfajova, T. Dekorsy, B. Schmidt i W. Skorupa. "Efficient silicon based light emitters". Microelectronics Journal 36, nr 11 (listopad 2005): 957–62. http://dx.doi.org/10.1016/j.mejo.2005.04.002.
Pełny tekst źródłaKittler, Martin, Teimuraz Mchedlidze, Tzanimir Arguirov, Winfried Seifert, Manfred Reiche i Thomas Wilhelm. "Silicon based IR light emitters". physica status solidi (c) 6, nr 3 (marzec 2009): 707–15. http://dx.doi.org/10.1002/pssc.200880713.
Pełny tekst źródłaKasper, Erich, i Michael Oehme. "Germanium tin light emitters on silicon". Japanese Journal of Applied Physics 54, nr 4S (27.03.2015): 04DG11. http://dx.doi.org/10.7567/jjap.54.04dg11.
Pełny tekst źródłaGuha, Supratik, i Nestor A. Bojarczuk. "Multicolored light emitters on silicon substrates". Applied Physics Letters 73, nr 11 (14.09.1998): 1487–89. http://dx.doi.org/10.1063/1.122181.
Pełny tekst źródłaFauchet, P. M. "Progress toward nanoscale silicon light emitters". IEEE Journal of Selected Topics in Quantum Electronics 4, nr 6 (1998): 1020–28. http://dx.doi.org/10.1109/2944.736103.
Pełny tekst źródłaKittler, M., T. Arguirov, W. Seifert, X. Yu, G. Jia, O. F. Vyvenko, T. Mchedlidze, M. Reiche, J. Sha i D. Yang. "Silicon nanostructures for IR light emitters". Materials Science and Engineering: C 27, nr 5-8 (wrzesień 2007): 1252–59. http://dx.doi.org/10.1016/j.msec.2006.09.034.
Pełny tekst źródłaMakarova, Maria, Jelena Vuckovic, Hiroyuki Sanda i Yoshio Nishi. "Silicon-based photonic crystal nanocavity light emitters". Applied Physics Letters 89, nr 22 (27.11.2006): 221101. http://dx.doi.org/10.1063/1.2396903.
Pełny tekst źródłaKveder, Vitaly V., i Martin Kittler. "Dislocations in Silicon and D-Band Luminescence for Infrared Light Emitters". Materials Science Forum 590 (sierpień 2008): 29–56. http://dx.doi.org/10.4028/www.scientific.net/msf.590.29.
Pełny tekst źródłaLourenço, M. A., i K. P. Homewood. "Dislocation-engineered silicon light emitters for photonic integration". Semiconductor Science and Technology 23, nr 6 (12.05.2008): 064005. http://dx.doi.org/10.1088/0268-1242/23/6/064005.
Pełny tekst źródłaRozprawy doktorskie na temat "Light emitters in silicon"
Shakoor, Abdul. "Silicon nanocavity light emitters at 1.3-1.5 µm wavelength". Thesis, University of St Andrews, 2013. http://hdl.handle.net/10023/3673.
Pełny tekst źródłaGermer, Susette. "Design and analysis of integrated waveguide structures and their coupling to silicon-based light emitters". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-172306.
Pełny tekst źródłaPotfajova, J. "Silicon based microcavity enhanced light emitting diodes". Forschungszentrum Dresden-Rossendorf, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-27756.
Pełny tekst źródłaZabel, Thomas [Verfasser], Gerhard [Akademischer Betreuer] Abstreiter, Jonathan J. [Akademischer Betreuer] Finley i Bougeard [Akademischer Betreuer] Dominique. "Study on silicon-germanium nanoislands as emitters for a monolithic silicon light source / Thomas Zabel. Gutachter: Jonathan J. Finley ; Bougeard Dominique ; Gerhard Abstreiter. Betreuer: Gerhard Abstreiter". München : Universitätsbibliothek der TU München, 2012. http://d-nb.info/103155176X/34.
Pełny tekst źródłaPotfajova, J. "Silicon based microcavity enhanced light emitting diodes". Forschungszentrum Dresden-Rossendorf, 2009. https://hzdr.qucosa.de/id/qucosa%3A21604.
Pełny tekst źródłaPotfajova, Jaroslava. "Silicon based microcavity enhanced light emitting diodes". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-25451.
Pełny tekst źródłaGermer, Susette [Verfasser], Lars [Akademischer Betreuer] Rebohle, Wolfgang [Akademischer Betreuer] Skorupa, Johannes [Akademischer Betreuer] Heitmann i Manfred [Akademischer Betreuer] Helm. "Design and analysis of integrated waveguide structures and their coupling to silicon-based light emitters / Susette Germer. Gutachter: Johannes Heitmann ; Manfred Helm. Betreuer: Lars Rebohle ; Wolfgang Skorupa". Dresden : Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2015. http://d-nb.info/1075123712/34.
Pełny tekst źródłaGermer, Susette Verfasser], Lars [Akademischer Betreuer] [Rebohle, Wolfgang [Akademischer Betreuer] Skorupa, Johannes [Akademischer Betreuer] Heitmann i Manfred [Akademischer Betreuer] Helm. "Design and analysis of integrated waveguide structures and their coupling to silicon-based light emitters / Susette Germer. Gutachter: Johannes Heitmann ; Manfred Helm. Betreuer: Lars Rebohle ; Wolfgang Skorupa". Dresden : Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2015. http://d-nb.info/1075123712/34.
Pełny tekst źródłaArciniegas, Carlos Andres Gonzalez. "Properties of the light emitted by a silicon on-chip optical parametric oscillator (OPO)". Universidade de São Paulo, 2017. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-22112017-153330/.
Pełny tekst źródłaO oscilador paramétrico ótico (OPO) tem sido uma fonte muito versátil de estados não clássicos da luz. A configuração usual destes OPOs consiste em um cristal macroscópico com não linearidade de segunda ordem no interior de uma cavidade ótica. Recentemente, devido ao desenvolvimento da fotonica de silício, foi possível a implementação de micro- cavidades óticas e OPOs que possuem varias vantagens sobre OPOs usuais. Não entanto a não linearidade destes sistemas é de terceira ordem. Neste trabalho, descrevemos teoricamente as propriedades quânticas da luz gerada num OPO com não linearidade de terceira ordem. Mostra-se que os efeitos de modulação de fase (não presentes na não linearidade de segunda ordem) e a dispersão são determinantes para a geração e o emaranhamento produzido no sistema. Emaranhamento bi e tri partito foi predito teoricamente usando o formalismo de modos de Schmidt. Também foi feita uma descrição quando mais modos da cavidade são excitados gerando um pente de frequência. Nesta situação. e utilizando novamente o formalismo de modos de Schmidt, foi predito emaranhamento multimodo destes sistemas.
Lai, Jiun-Hong. "Development of low-cost high-efficiency commercial-ready advanced silicon solar cells". Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/52234.
Pełny tekst źródłaKsiążki na temat "Light emitters in silicon"
Shur, Michael S., i Artūras Žukauskas, red. UV Solid-State Light Emitters and Detectors. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2103-9.
Pełny tekst źródłaNATO Advanced Research Workshop (2003 Vilnius, Lithuania). UV solid-state light emitters and detectors. Boston: Kluwer Academic Publishers, 2004.
Znajdź pełny tekst źródłaAG, Siemens. Silicon photodetectors and infrared emitters data book 1985/86. Mu nchen: Siemens Aktiengesellschaft, 1985.
Znajdź pełny tekst źródłaSymposium E on Light Emission from Silicon (1993 Strasbourg, France). Light emission from silicon. Amsterdam: North-Holland, 1994.
Znajdź pełny tekst źródłaWoodhead, Christopher. Enhancing the Light Output of Solid-State Emitters. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-95013-6.
Pełny tekst źródłaLing, Bo. Nanorod fabrications and its potential application in light emitters. Hauppauge, N.Y: Nova Science Pub., 2011.
Znajdź pełny tekst źródłaGardelis, S. Light emission from porous silicon. Manchester: UMIST, 1993.
Znajdź pełny tekst źródłaOssicini, Stefano, Lorenzo Pavesi i Francesco Priolo. Light Emitting Silicon for Microphotonics. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/b13588.
Pełny tekst źródłaNakamura, Shuji. The blue laser diode: GaN based light emitters and lasers. Berlin: Springer, 1997.
Znajdź pełny tekst źródłaOhtsu, Motoichi. Silicon Light-Emitting Diodes and Lasers. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-42014-1.
Pełny tekst źródłaCzęści książek na temat "Light emitters in silicon"
Zimmermann, Horst. "Silicon Light Emitters". W Springer Series in Optical Sciences, 237–56. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-01521-2_9.
Pełny tekst źródłaZimmermann, Horst. "Silicon Light Emitters". W Springer Series in Photonics, 187–201. Berlin, Heidelberg: Springer Berlin Heidelberg, 2000. http://dx.doi.org/10.1007/978-3-662-04018-8_9.
Pełny tekst źródłaPellegrino, Paolo, Olivier Jambois, Se-Young Seo i Blas Garrido. "Chapter 13 Nanostructured Silicon Light Emitters". W Silicon Nanophotonics: Basic Principles, Present Status, and Perspectives, 2nd Ed, 393–428. Penthouse Level, Suntec Tower 3, 8 Temasek Boulevard, Singapore 038988: Pan Stanford Publishing Pte. Ltd., 2016. http://dx.doi.org/10.1201/9781315364797-14.
Pełny tekst źródłaStange, D., C. Schulte-Braucks, N. von den Driesch, S. Wirths, G. Mussler, S. Lenk, T. Stoica i in. "High Sn-Content GeSn Light Emitters for Silicon Photonics". W Future Trends in Microelectronics, 181–93. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2016. http://dx.doi.org/10.1002/9781119069225.ch2-6.
Pełny tekst źródłaKittler, Martin, T. Arguirov, Winfried Seifert, X. Yu i M. Reiche. "Silicon Based Light Emitters for On-Chip Optical Interconnects". W Solid State Phenomena, 749–54. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/3-908451-13-2.749.
Pełny tekst źródłaLockwood, D. J., i L. Tsybeskov. "Three-Dimensional Silicon–Germanium Nanostructures for CMOS-Compatible Light Emitters". W Nanotechnology for Electronics, Photonics, and Renewable Energy, 41–84. New York, NY: Springer New York, 2010. http://dx.doi.org/10.1007/978-1-4419-7454-9_2.
Pełny tekst źródłaFauchet, P. M., S. Chan, H. A. Lopez i K. D. Hirschman. "Silicon Light Emitters: Preparation, Properties, Limitations, and Integration with Microelectronic Circuitry". W Frontiers of Nano-Optoelectronic Systems, 99–119. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-010-0890-7_7.
Pełny tekst źródłaPalomino, Javier, Deepak Varshney, Brad R. Weiner i Gerardo Morell. "Silicon nanowires as electron field emitters". W Silicon Nanomaterials Sourcebook, 435–54. Boca Raton, FL: CRC Press, Taylor & Francis Group, [2017] | Series: Series in materials science and engineering: CRC Press, 2017. http://dx.doi.org/10.4324/9781315153544-22.
Pełny tekst źródłaHa, J. S. "GaN and ZnO Light Emitters". W Oxide and Nitride Semiconductors, 415–57. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88847-5_9.
Pełny tekst źródłaLange, Marlene A., Tim Kolbe i Martin Jekel. "Ultraviolet Light-Emitting Diodes for Water Disinfection". W III-Nitride Ultraviolet Emitters, 267–91. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-24100-5_10.
Pełny tekst źródłaStreszczenia konferencji na temat "Light emitters in silicon"
Simons, A. J. "Solid-state electroluminescence from porous silicon". W IEE Colloquium on Wide Bandgap Semiconductor Light Emitters. IEE, 1996. http://dx.doi.org/10.1049/ic:19961225.
Pełny tekst źródłaKasper, E., i M. Oehme. "Germanium Tin Light Emitters on Silicon". W 2014 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2014. http://dx.doi.org/10.7567/ssdm.2014.b-1-1.
Pełny tekst źródłaBuca, Dan, Detlev Gruetzmacher, Moustafa El Kurdi, Daniela Stange, Zoran Ikonic, Nils von den Driesch, Denis Rainko, Hans Sigg i Jean-Michel Hartmann. "Strain engineering in SiGeSn/GeSn heterostructures for light emitters (Conference Presentation)". W Silicon Photonics XIV, redaktorzy Graham T. Reed i Andrew P. Knights. SPIE, 2019. http://dx.doi.org/10.1117/12.2511367.
Pełny tekst źródłaMakarova, Maria, Jelena Vuckovic, Hiroyuki Sanda i Yoshio Nishi. "Silicon-based photonic crystal nanocavity light emitters". W 2006 IEEE LEOS Annual Meeting. IEEE, 2006. http://dx.doi.org/10.1109/leos.2006.279018.
Pełny tekst źródłaMakarova, Maria, Jelena Vuckovic, Hiroyuki Sanda i Yoshio Nishi. "Two-dimensional porous silicon photonic crystal light emitters". W 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference. IEEE, 2006. http://dx.doi.org/10.1109/cleo.2006.4627619.
Pełny tekst źródłaBogalecki, Alfons W., Monuko du Plessis, Petrus J. Venter i Christo Janse van Rensburg. "Spectral characteristics of electroluminescent silicon CMOS light emitters". W SPIE OPTO, redaktorzy Joel Kubby i Graham T. Reed. SPIE, 2012. http://dx.doi.org/10.1117/12.907923.
Pełny tekst źródłaBayram, C., i R. Liu. "Cubic phase light emitters hetero-integrated on silicon". W 2017 IEEE Photonics Conference (IPC). IEEE, 2017. http://dx.doi.org/10.1109/ipcon.2017.8115994.
Pełny tekst źródłaGoosen, Marius E., Petrus J. Venter, Monuko du Plessis, Ilse J. Nell, Alfons W. Bogalecki i Pieter Rademeyer. "High-speed CMOS optical communication using silicon light emitters". W SPIE OPTO, redaktorzy Alexei L. Glebov i Ray T. Chen. SPIE, 2011. http://dx.doi.org/10.1117/12.875112.
Pełny tekst źródłaPavesi, Lorenzo. "Silicon light emitters and amplifiers: state of the art". W Integrated Optoelectronic Devices 2006, redaktorzy Joel A. Kubby i Graham T. Reed. SPIE, 2006. http://dx.doi.org/10.1117/12.651026.
Pełny tekst źródłaSchmiedeke, Paul, Nitin Mukhundhan, Andreas Thurn, Akhil Ajay, Thomas Stettner, Jochen Bissinger, Hyowon Jeong i in. "Heterogeneous III-V Nanowire Lasers and Quantum Dot Emitters on Silicon Photonic Circuits". W Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/iprsn.2022.itu3b.4.
Pełny tekst źródłaRaporty organizacyjne na temat "Light emitters in silicon"
Vladimir Dmitriev. Ultra High p-doping Material Research for GaN Based Light Emitters. Office of Scientific and Technical Information (OSTI), czerwiec 2007. http://dx.doi.org/10.2172/966358.
Pełny tekst źródłaMa, Xuedan. Investigation of light-matter interactions: Photoluminescence properties of individual quantum emitters. Office of Scientific and Technical Information (OSTI), wrzesień 2014. http://dx.doi.org/10.2172/1156834.
Pełny tekst źródłaSPIRE CORP BEDFORD MA. Silicon-Based Blue Light Emitting Diode. Fort Belvoir, VA: Defense Technical Information Center, grudzień 1993. http://dx.doi.org/10.21236/ada282382.
Pełny tekst źródłaFigiel, Jeffrey James, Mary Hagerott Crawford, Michael Anthony Banas, Darcie Farrow, Andrew M. Armstrong, Darwin Keith Serkland, Andrew Alan Allerman i Randal L. Schmitt. Final LDRD report : development of advanced UV light emitters and biological agent detection strategies. Office of Scientific and Technical Information (OSTI), grudzień 2007. http://dx.doi.org/10.2172/950095.
Pełny tekst źródłaRonzhin, Anatoly. Silicon timing response to different laser light. Office of Scientific and Technical Information (OSTI), styczeń 2017. http://dx.doi.org/10.2172/1395486.
Pełny tekst źródłaShih, Y. C. Formation of amorphous silicon by light ion damage. Office of Scientific and Technical Information (OSTI), grudzień 1985. http://dx.doi.org/10.2172/6144257.
Pełny tekst źródłaSafavi-Naeini, Amir H., Simon Groeblacher, Jeff T. Hill, Jasper Chan, Markus Aspelmeyer i Oskar Painter. Squeezing of Light via Reflection from a Silicon Micromechanical Resonator. Fort Belvoir, VA: Defense Technical Information Center, marzec 2013. http://dx.doi.org/10.21236/ada584019.
Pełny tekst źródłaHall, R. B., J. A. Rand, D. H. Ford i A. E. Ingram. Light-trapped, interconnected, Silicon-Film{trademark} modules. Final technical status report. Office of Scientific and Technical Information (OSTI), kwiecień 1998. http://dx.doi.org/10.2172/653971.
Pełny tekst źródłaBragg-Sitton, Shannon M. Light Water Reactor Sustainability Program Status of Silicon Carbide Joining Technology Development. Office of Scientific and Technical Information (OSTI), wrzesień 2013. http://dx.doi.org/10.2172/1122120.
Pełny tekst źródłaCheng, Hung H., G. Sun i R. S. Soref. Development of Mid-infrared GeSn Light Emitting Diodes on a Silicon Substrate. Fort Belvoir, VA: Defense Technical Information Center, kwiecień 2015. http://dx.doi.org/10.21236/ada615859.
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