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Gotowa bibliografia na temat „Leakage Current Density”

Autor: Grafiati

Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "Leakage Current Density"

1

Kawahara, Takamitsu, Naoki Hatta, Kuniaki Yagi, et al. "Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC." Materials Science Forum 645-648 (April 2010): 339–42. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.339.

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The correlation between leakage current and stacking fault (SF) density in p-n diodes fabricated on 3C-SiC homo-epitaxial layer is investigated. The leakage current density at reverse bias strongly depends on the SF density; an increase of one order of magnitude in the SF density enhances the leakage current by five orders of magnitude at a reverse bias of 400 V. In order to obtain commercially suitable MOSFETs with 10-4Acm-2 at 600V, the SF density has to be reduced below 6×104 cm-2. Photoemission caused by hot electrons, which travel along a leakage path, can be observed at the crossing betw

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2

Tamada, Minoru, Yuji Noguchi, and Masaru Miyayama. "Defects and Leakage Current in PbTiO₃ Single Crystals." Key Engineering Materials 350 (October 2007): 77–80. http://dx.doi.org/10.4028/www.scientific.net/kem.350.77.

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Single crystals of PbTiO3 (PT) were grown by a self flux method, and effects of lattice defects on the leakage current properties were investigated. While PT crystals annealed in air at 700 oC showed a leakage current density of the order of 10-5 A/cm2, annealing under a high oxygen partial pressure of 35 MPa increased leakage current density to 10-4 A/cm2. The increase in leakage current by the oxidation treatment provides direct evidence that electron hole is a detrimental carrier for the leakage current property of PT at room temperature. The vacancies of Pb are suggested to act as an elect

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3

Kim, Hyung Chul, Moon Seob Han, Hyun June Park, Dong Uk Jang, Gyung Suk Kil, and Nirmal Kumar Nair. "Consideration of Uncertainty in Diagnosis for Railway Arrester." Key Engineering Materials 321-323 (October 2006): 1507–12. http://dx.doi.org/10.4028/www.scientific.net/kem.321-323.1507.

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This paper presents a method for diagnosis of railway arrester considering uncertainty. Arresters, a protective device that prevents damage due to transient voltages, deteriorate due to the absorption of moisture, repetitive operation during over-voltages and manufacturing defects. Various diagnostic techniques are available for monitoring deterioration of arresters. The technique based on the amplitude of leakage current measures the root mean square or peak values of leakage current components. After measuring the total leakage current, harmonics of leakage current components are analyzed by

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4

Ishikawa, Tsuyoshi, T. Katsuno, Y. Watanabe, H. Fujiwara, and T. Endo. "Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode." Materials Science Forum 717-720 (May 2012): 371–74. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.371.

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We investigate the influence of SiC surface morphology on increase and variability in reverse leakage current of SiC Schottky barrier diodes using device simulation. It is found that etch pits with only a few tens of nm in depth has a large influence on leakage current and is also shown that leakage current is sensitive to both etch pit shape and density. From these results, we suggest the critical density of nanoscale pit, which is suppressing the variability of leakage current, at various drift layer thickness tdrift and doping concentration Ndrift.

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5

Hirokazu, Fujiwara, T. Katsuno, Tsuyoshi Ishikawa, et al. "Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes." Materials Science Forum 717-720 (May 2012): 911–16. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.911.

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The impact of threading dislocation density on the leakage current of reverse IV characteristics in 1.2 kV Schottky barrier diodes (SBDs), junction barrier Schottky diodes (JBSDs), and PN junction diodes (PNDs) was investigated. The leakage current density and threading dislocation density have different positive correlations in each type of diode. For example, the correlation in SBDs is strong, but weak in PNDs. The threading dislocations were found to be in the same location as the current leakage points in the SBDs, but not in the PNDs. Nano-scale inverted cone pits were observed at the Sch

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6

Uno, Shigeyasu, Kazuaki Deguchi, Yoshinari Kamakura, and Kenji Taniguchi. "Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current." Japanese Journal of Applied Physics 41, Part 1, No. 4B (2002): 2645–49. http://dx.doi.org/10.1143/jjap.41.2645.

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7

Kim, Hyojung, Jongwoo Park, Junehwan Kim, et al. "Leakage Current Analysis Method for Metal Insulator Semiconductor Capacitors Through Low-Frequency Noise Measurement." Journal of Nanoscience and Nanotechnology 21, no. 3 (2021): 1966–70. http://dx.doi.org/10.1166/jnn.2021.18901.

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Use of thinner oxides to improve the operating speed of a complementary metal-oxidesemiconductor (CMOS) device causes serious gate leakage problems. Leakage current of the dielectric analysis method has I–V, C–V, and charge pumping, but the procedure is very complicated. In this premier work, we analyzed the leakage current of metal insulator semiconductor (MIS) capacitors with different initiators through low-frequency noise (LFN) measurement with simplicity and high sensitivity. The LFN measurement results show a correlation between power spectral density (SIG) and gate leakage current (IG).

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8

Negara, I. Made Yulistya, I. G. N. Satriyadi Hernanda, Dimas Anton Asfani, Mira Kusuma Wardani, Bonifacius Kevin Yegar, and Reynaldi Syahril. "Effect of Seawater and Fly Ash Contaminants on Insulator Surfaces Made of Polymer Based on Finite Element Method." Energies 14, no. 24 (2021): 8581. http://dx.doi.org/10.3390/en14248581.

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Polymer is an insulating substance that has become increasingly popular in recent years due to its benefits. Light density, superior dielectric and thermal properties, and water-resistant or hydrophobic properties are only a few of the benefits. The presence of impurities or pollutants on the insulator’s surface lowers its dielectric capacity, which can lead to current leakage. The influence of seawater and fly ash pollutants on the distribution of the electric field and the current density of the insulator was simulated in this study. The finite element method was used to execute the simulati

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9

Geng, Kuiwei, Ditao Chen, Quanbin Zhou, and Hong Wang. "AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer." Electronics 7, no. 12 (2018): 416. http://dx.doi.org/10.3390/electronics7120416.

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Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMT). The SiNx, SiON, and SiO2 were deposited by a plasma-enhanced chemical vapor deposition (PECVD) system. Great differences in the gate leakage current, breakdown voltage, interface traps, and current collapse were observed. The SiON MIS-HEMT exhibited the highest breakdown voltage and Ion/Ioff ratio. The SiNx MIS-HEMT performed well in current collapse but exhibited the highest gate leakage current den

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10

Albertin, Katia F., M. A. Valle, and I. Pereyra. "Study Of MOS Capacitors With TiO2 And SiO2/TiO2 Gate Dielectric." Journal of Integrated Circuits and Systems 2, no. 2 (2007): 89–93. http://dx.doi.org/10.29292/jics.v2i2.272.

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MOS capacitors with TiO2 and TiO2/SiO2 dielectric layer were fabricated and characterized. TiO2 films where physical characterized by Rutherford Backscattering, Fourier TransformInfrared Spectroscopy and Elipsometry measurements. Capacitance-voltage (1MHz) and current voltage measurements were utilized to obtain, the effective dielectric constant, effective oxide thickness (EOT), leakage current density and interface quality. The results show that the obtained TiO2 films present a dielectric constant of approximately 40, a good interface quality with silicon and a leakage current density, of 7

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