Artykuły w czasopismach na temat „Isolated gate driver”
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Gras, David, Christophe Pautrel, Amir Fanaei, Gregory Thepaut, Maxime Chabert, Fabien Laplace i Gonzalo Picun. "Highly Integrated and Isolated Universal Half-Bridge Power Gate Driver and Associated Flyback Power Supply for High Temperature and High Reliability Applications". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (1.01.2014): 000206–13. http://dx.doi.org/10.4071/hitec-wp12.
Pełny tekst źródłaMatalata, Hendi, i Rozlinda Dewi. "Desain Rangkaian Gate Driver Analog untuk Dual Mosfet Drivers". Jurnal Ilmiah Universitas Batanghari Jambi 21, nr 2 (4.07.2021): 714. http://dx.doi.org/10.33087/jiubj.v21i2.1534.
Pełny tekst źródłaKuo, Hsuan-Yu, i Jau-Jr Lin. "Development of Miniaturized Monolithic Isolated Gate Driver". Advances in Science, Technology and Engineering Systems Journal 6, nr 5 (wrzesień 2021): 177–84. http://dx.doi.org/10.25046/aj060520.
Pełny tekst źródłaGarcia, Jorge, Sarah Saeed, Emre Gurpinar i Alberto Castellazzi. "A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers". Electronics 10, nr 2 (13.01.2021): 159. http://dx.doi.org/10.3390/electronics10020159.
Pełny tekst źródłaDoucet, Jean-Christophe, Aimad Saib, Christian Mourad, François Piette, Etienne Vanzieleghem i Pierre Delatte. "HADES®: a High-Temperature Isolated Gate Driver Solution for SiC-based Multi-kW Converters". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (1.01.2011): 000145–51. http://dx.doi.org/10.4071/hiten-paper3-jcdoucet.
Pełny tekst źródłaMuhammad, Khairul Safuan, i Dylan Dah-Chuan Lu. "Magnetically Isolated Gate Driver With Leakage Inductance Immunity". IEEE Transactions on Power Electronics 29, nr 4 (kwiecień 2014): 1567–72. http://dx.doi.org/10.1109/tpel.2013.2279548.
Pełny tekst źródłaZhao, Weichuan, Sohrab Ghafoor, Gijs Willem Lagerweij, Gert Rietveld, Peter Vaessen i Mohamad Ghaffarian Niasar. "Comprehensive Investigation of Promising Techniques to Enhance the Voltage Sharing among SiC MOSFET Strings, Supported by Experimental and Simulation Validations". Electronics 13, nr 8 (13.04.2024): 1481. http://dx.doi.org/10.3390/electronics13081481.
Pełny tekst źródłaMayorga, J. Valle, C. Gutshall, K. Phan, I. Escorcia, H. A. Mantooth, B. Reese, M. Schupbach i A. Lostetter. "High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (1.01.2011): 000152–58. http://dx.doi.org/10.4071/hiten-paper4-jmayorga.
Pełny tekst źródłaMakki, Loreine, Marc Anthony Mannah, Christophe Batard, Nicolas Ginot i Julien Weckbrodt. "Investigating the Shielding Effect of Pulse Transformer Operation in Isolated Gate Drivers for SiC MOSFETs". Energies 14, nr 13 (27.06.2021): 3866. http://dx.doi.org/10.3390/en14133866.
Pełny tekst źródłaSugano, Ryoko, Yuchong Sun i Hiroo Sekiya. "High-frequency resonant gate driver with isolated class-E amplifier". Nonlinear Theory and Its Applications, IEICE 9, nr 3 (2018): 358–73. http://dx.doi.org/10.1587/nolta.9.358.
Pełny tekst źródłaBRAMBILLA, ANGELO. "SNUBBER BEHAVIOR AND DESIGN IN FLYBACK CONVERTERS FOR ISOLATED IGBT DRIVERS". Journal of Circuits, Systems and Computers 05, nr 03 (wrzesień 1995): 523–29. http://dx.doi.org/10.1142/s0218126695000321.
Pełny tekst źródłaZhang, Zhiliang, Fei-Fei Li i Yan-Fei Liu. "A High-Frequency Dual-Channel Isolated Resonant Gate Driver With Low Gate Drive Loss for ZVS Full-Bridge Converters". IEEE Transactions on Power Electronics 29, nr 6 (czerwiec 2014): 3077–90. http://dx.doi.org/10.1109/tpel.2013.2272662.
Pełny tekst źródłaSerban, Emanuel, Mohammad Ali Saket i Martin Ordonez. "High-Performance Isolated Gate-Driver Power Supply With Integrated Planar Transformer". IEEE Transactions on Power Electronics 36, nr 10 (październik 2021): 11409–20. http://dx.doi.org/10.1109/tpel.2021.3070053.
Pełny tekst źródłaGarcia, Jorge, Sara Saeed, Emre Gurpinar, Alberto Castellazzi i Pablo Garcia. "Self-Powering High Frequency Modulated SiC Power MOSFET Isolated Gate Driver". IEEE Transactions on Industry Applications 55, nr 4 (lipiec 2019): 3967–77. http://dx.doi.org/10.1109/tia.2019.2910789.
Pełny tekst źródłaAhmed Rmila, Salahaldein, i Simon S. Ang. "A High-Input Voltage Two-Phase Series-Capacitor DC-DC Buck Converter". Journal of Electrical and Computer Engineering 2020 (8.06.2020): 1–15. http://dx.doi.org/10.1155/2020/9464727.
Pełny tekst źródłaChen, Changnan, Pichao Pan, Jiebin Gu i Xinxin Li. "A High-Voltage-Isolated MEMS Quad–Solenoid Transformer with Specific Insulation Barriers for Miniaturized Galvanically Isolated Power Applications". Micromachines 15, nr 2 (31.01.2024): 228. http://dx.doi.org/10.3390/mi15020228.
Pełny tekst źródłaChen, Lei, Caihui Zhu, Jiaming Zheng, Jian Qiu, Hui Zhao i Kefu Liu. "A Flexible Solid-State Marx Modulator Module Based on Discrete Magnetic Coupling Drivers". Electronics 12, nr 18 (10.09.2023): 3831. http://dx.doi.org/10.3390/electronics12183831.
Pełny tekst źródłaPicun, Gonzalo, Khalil El-Falahi, Christophe Pautrel, Yoann Duse, Nicolas Joubert, Anaud Anotta, Georget Lemoyne i in. "More than Drivers in Motor Drives: Closing the Loop". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (1.01.2015): 000179–88. http://dx.doi.org/10.4071/hiten-session5-paper5_3.
Pełny tekst źródłaRothmund, Daniel, Dominik Bortis i Johann W. Kolar. "Highly Compact Isolated Gate Driver With Ultrafast Overcurrent Protection for 10 kV SiC MOSFETs". CPSS Transactions on Power Electronics and Applications 3, nr 4 (grudzień 2018): 278–91. http://dx.doi.org/10.24295/cpsstpea.2018.00028.
Pełny tekst źródłaZan, Xin, i Al-Thaddeus Avestruz. "Isolated Ultrafast Gate Driver with Variable Duty Cycle for Pulse and VHF Power Electronics". IEEE Transactions on Power Electronics 35, nr 12 (grudzień 2020): 12678–85. http://dx.doi.org/10.1109/tpel.2020.2999481.
Pełny tekst źródłaWu, Qunfang, Qin Wang, Jinyi Zhu i Xiao Lan. "Dual-Channel Push–Pull Isolated Resonant Gate Driver for High-Frequency ZVS Full-Bridge Converters". IEEE Transactions on Power Electronics 34, nr 5 (maj 2019): 4019–24. http://dx.doi.org/10.1109/tpel.2018.2873192.
Pełny tekst źródłaRashmi, Ruchi, i Shweta Jagtap. "Design of symmetrical half-bridge converter with a series coupling capacitor". World Journal of Engineering 17, nr 5 (30.06.2020): 609–20. http://dx.doi.org/10.1108/wje-09-2019-0280.
Pełny tekst źródłaNaik, B. Satish, S. Shan, L. Umanand i B. Subba Reddy. "A Novel Wide Duty Cycle Range Wide Band High Frequency Isolated Gate Driver for Power Converters". IEEE Transactions on Industry Applications 54, nr 1 (styczeń 2018): 437–46. http://dx.doi.org/10.1109/tia.2017.2764850.
Pełny tekst źródłaLu, Xiaozhuang, Lixing Zhou, Zhanwu Yao i Junhua Qin. "FPGA-Based Implementation of Reverse Electrical Pulse Stress and Measurement system for Gallium Nitride High-Electron-Mobility Transistors". Journal of Physics: Conference Series 2524, nr 1 (1.06.2023): 012018. http://dx.doi.org/10.1088/1742-6596/2524/1/012018.
Pełny tekst źródłaSpataro, Simone, Egidio Ragonese, Nunzio Spina i Giuseppe Palmisano. "A GaN-Integrated Galvanically Isolated Data Link Based on RF Planar Coupling With Voltage Combining for Gate-Driver Applications". IEEE Access 12 (2024): 48530–39. http://dx.doi.org/10.1109/access.2024.3383535.
Pełny tekst źródłaMajima, Hideaki, Hiroaki Ishihara, Katsuyuki Ikeuchi, Toshiyuki Ogawa, Yuichi Sawahara, Tatsuhiro Ogawa, Satoshi Takaya, Kohei Onizuka i Osamu Watanabe. "Cascoded GaN half-bridge with 17 MHz wide-band galvanically isolated current sensor". Japanese Journal of Applied Physics 61, SC (21.02.2022): SC1052. http://dx.doi.org/10.35848/1347-4065/ac4446.
Pełny tekst źródłaNguyen, The Van, Jean-Christophe Crebier i Pierre-Olivier Jeannin. "Design and Investigation of an Isolated Gate Driver Using CMOS Integrated Circuit and HF Transformer for Interleaved DC/DC Converter". IEEE Transactions on Industry Applications 49, nr 1 (styczeń 2013): 189–97. http://dx.doi.org/10.1109/tia.2012.2229254.
Pełny tekst źródłaRagonese, Egidio, Nunzio Spina, Alessandro Parisi i Giuseppe Palmisano. "An Experimental Comparison of Galvanically Isolated DC-DC Converters: Isolation Technology and Integration Approach". Electronics 10, nr 10 (15.05.2021): 1186. http://dx.doi.org/10.3390/electronics10101186.
Pełny tekst źródłaKołodziejski, Wojciech, Jacek Jasielski, Stanisław W. Kuta, Grzegorz Szerszeń i Witold Machowski. "Review and comparison of methods for limiting leakage currents in single-phase transformerless PV inverter topologies". Science, Technology and Innovation 16, nr 3-4 (31.03.2023): 1–19. http://dx.doi.org/10.55225/sti.477.
Pełny tekst źródłaHong, Kuo-Bin, Chun-Yen Peng, Wei-Cheng Lin, Kuan-Lun Chen, Shih-Chen Chen, Hao-Chung Kuo, Edward Yi Chang i Chun-Hsiung Lin. "Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer". Micromachines 14, nr 3 (23.02.2023): 519. http://dx.doi.org/10.3390/mi14030519.
Pełny tekst źródłaJeng, Shyr-Long, Chih-Chiang Wu i Wei-Hua Chieng. "Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting". Journal of Nanomaterials 2015 (2015): 1–15. http://dx.doi.org/10.1155/2015/478375.
Pełny tekst źródłaThakre, Kishor, Kanungo Barada Mohanty, Vinaya Sagar Kommukuri i Aditi Chatterjee. "New Topology for Asymmetrical Multilevel Inverter: An Effort to Reduced Device Count". Journal of Circuits, Systems and Computers 27, nr 04 (6.12.2017): 1850055. http://dx.doi.org/10.1142/s021812661850055x.
Pełny tekst źródłaPrathaban, Arumbu Venkadasamy, Karthikeyan Dhandapani i Ahamed Ibrahim Soni Abubakar. "Compact Thirteen-Level Inverter for PV Applications". Energies 15, nr 8 (12.04.2022): 2808. http://dx.doi.org/10.3390/en15082808.
Pełny tekst źródłaWu, Chih-Chiang, Ching-Yao Liu, Guo-Bin Wang, Yueh-Tsung Shieh, Wei-Hua Chieng i Edward-Yi Chang. "A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization". Energies 14, nr 12 (11.06.2021): 3477. http://dx.doi.org/10.3390/en14123477.
Pełny tekst źródłaMohanty, Kanungo Barada, Kishor Thakre, Aditi Chatterjee, Ashwini Kumar Nayak i Vinaya Sagar Kommukuri. "Reduction in components using modified topology for asymmetrical multilevel inverter". World Journal of Engineering 16, nr 1 (11.02.2019): 71–77. http://dx.doi.org/10.1108/wje-01-2017-0010.
Pełny tekst źródłaJasielski, Jacek, i Stanisław Kuta. "Applied methods of power supply and galvanic isolation of gate drivers of power transistors in bridging end stages of Class D amplifiers and inverters". Science, Technology and Innovation 2, nr 1 (28.06.2018): 31–41. http://dx.doi.org/10.5604/01.3001.0012.1413.
Pełny tekst źródłaPathak, Medha, Lisa Kurtz, Francesco Tombola i Ehud Isacoff. "The Cooperative Voltage Sensor Motion that Gates a Potassium Channel". Journal of General Physiology 125, nr 1 (28.12.2004): 57–69. http://dx.doi.org/10.1085/jgp.200409197.
Pełny tekst źródłaPeracchia, Camillo, i Lillian Mae Leverone Peracchia. "Calmodulin-Connexin Partnership in Gap Junction Channel Regulation-Calmodulin-Cork Gating Model". International Journal of Molecular Sciences 22, nr 23 (2.12.2021): 13055. http://dx.doi.org/10.3390/ijms222313055.
Pełny tekst źródłaPetruhanov, Vadim N., i Alexander N. Pechen. "Quantum Control Landscapes for Generation of H and T Gates in an Open Qubit with Both Coherent and Environmental Drive". Photonics 10, nr 11 (27.10.2023): 1200. http://dx.doi.org/10.3390/photonics10111200.
Pełny tekst źródłaHui, S. Y., S. C. Tang i Henry Shu-Hung Chung. "Optimal operation of coreless PCB transformer-isolated gate drive circuits with wide switching frequency range". IEEE Transactions on Power Electronics 14, nr 3 (maj 1999): 506–14. http://dx.doi.org/10.1109/63.761694.
Pełny tekst źródłaPeracchia, C., i S. J. Girsch. "Functional modulation of cell coupling: evidence for a calmodulin-driven channel gate". American Journal of Physiology-Heart and Circulatory Physiology 248, nr 6 (1.06.1985): H765—H782. http://dx.doi.org/10.1152/ajpheart.1985.248.6.h765.
Pełny tekst źródłaHu, Bo Xue, He Li, Zhuo Wei, Ya Feng Wang, Diang Xing, Ri Sha Na i Jin Wang. "An Auxiliary Power Supply for Gate Drive of Medium Voltage SiC Devices in High Voltage Applications". Materials Science Forum 924 (czerwiec 2018): 836–40. http://dx.doi.org/10.4028/www.scientific.net/msf.924.836.
Pełny tekst źródłaSpro, Ole Christian, Pierre Lefranc, Sanghyeon Park, Juan M. Rivas-Davila, Dimosthenis Peftitsis, Ole-Morten Midtgard i Tore Undeland. "Optimized Design of Multi-MHz Frequency Isolated Auxiliary Power Supply for Gate Drivers in Medium-Voltage Converters". IEEE Transactions on Power Electronics 35, nr 9 (wrzesień 2020): 9494–509. http://dx.doi.org/10.1109/tpel.2020.2972977.
Pełny tekst źródłaUSLU-OZKUCUK, Gonca. "TRIAC Based Isolated AC Load Drive Equivalent Circuit Design of Solid-State Relay". Eurasia Proceedings of Science Technology Engineering and Mathematics 26 (30.12.2023): 183–89. http://dx.doi.org/10.55549/epstem.1409469.
Pełny tekst źródłaHernández-García, C., T. Popmintchev, M. M. Murnane, H. C. Kapteyn, L. Plaja, A. Becker i A. Jaron-Becker. "Isolated broadband attosecond pulse generation with near- and mid-infrared driver pulses via time-gated phase matching". Optics Express 25, nr 10 (11.05.2017): 11855. http://dx.doi.org/10.1364/oe.25.011855.
Pełny tekst źródłaChoudhury, Subhashree, Mohit Bajaj, Taraprasanna Dash, Salah Kamel i Francisco Jurado. "Multilevel Inverter: A Survey on Classical and Advanced Topologies, Control Schemes, Applications to Power System and Future Prospects". Energies 14, nr 18 (13.09.2021): 5773. http://dx.doi.org/10.3390/en14185773.
Pełny tekst źródłaDíaz-Martín, Cristian, Eladio Durán, Salvador P. Litrán, José Luis Álvarez i Jorge Semião. "Single-Switch Non-Isolated Resonant DC-DC Converter for Single-Input Dual-Output Applications". Applied Sciences 13, nr 15 (30.07.2023): 8798. http://dx.doi.org/10.3390/app13158798.
Pełny tekst źródłaHitzemann, Moritz, Martin Lippmann, Jonas Trachte, Alexander Nitschke, Olaf Burckhardt i Stefan Zimmermann. "Wireless Low-Power Transfer for Galvanically Isolated High-Voltage Applications". Electronics 11, nr 6 (16.03.2022): 923. http://dx.doi.org/10.3390/electronics11060923.
Pełny tekst źródłaBhattacharya, Shilpi, Prabal Deb, Sujit K. Biswas i Ambarnath Banerjee. "Open-Delta VSC Based Voltage Controller in Isolated Power Systems". International Journal of Power Electronics and Drive Systems (IJPEDS) 6, nr 2 (1.06.2015): 376. http://dx.doi.org/10.11591/ijpeds.v6.i2.pp376-386.
Pełny tekst źródłaLi, Meiye, Meiying Li, Xiaoxia Hu i Ge Li. "Research on Anomie Behavior of Drivers on Non-physical Isolated Urban Road Based on Game Theory". MATEC Web of Conferences 259 (2019): 03004. http://dx.doi.org/10.1051/matecconf/201925903004.
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