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Artykuły w czasopismach na temat „IRFPA”

Autor: Grafiati

Data publikacji: 6 września 2023

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1

Würfel, D., M. Ruß, R. Lerch, D. Weiler, P. Yang i H. Vogt. "An uncooled VGA-IRFPA with novel readout architecture". Advances in Radio Science 9 (29.07.2011): 107–10. http://dx.doi.org/10.5194/ars-9-107-2011.

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Abstract. An uncooled VGA Infrared Focal Plane Array (IRFPA) based on microbolometers with a pixel pitch of 25 μm for thermal imaging applications is presented. The IRFPA has a 16-bit digital video data output at a frame rate of 30 Hz. Thousands of Analog to Digital Converters (ADCs) are located under the microbolometer array. One ADC consists of a Sigma-Delta-Modulator (SDM) of 2nd order and a decimation filter. It is multiplexed for a certain amount of microbolometers arranged in a so called "cluster". In the 1st stage of the SDM the microbolometer current is integrated time-continuously. The feedback is applied using a switchable current source. First measurements of Noise Equivalent Temperature Difference (NETD) as a key parameter for IRFPAs will be presented.

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2

Zhou, Tong, Tao Dong, Yan Su i Yong He. "A High Uniformity Readout Integrated Circuit for Infrared Focal Plane Array Applications". Applied Mechanics and Materials 602-605 (sierpień 2014): 2632–36. http://dx.doi.org/10.4028/www.scientific.net/amm.602-605.2632.

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Infrared focal plane arrays (IRFPA) suffer from inherent low frequency and fixed patter noise (FPN). To achieve high quality infrared image by mitigating the FPN of IRFPAs, a novel low-noise and high uniformity readout integrated circuit (ROIC) has been proposed. A correlated double sampling (CDS) with single capacitor method has been adopted in the ROIC design which can effectively reduce the FPN, KTC and 1/f noise. A 4×4 experimental readout chip has been designed and fabricated using the SMIC 0.18 μm CMOS process. Both the function and performance of the proposed readout circuit have been verified by experimental results. The test results show that the proposed ROIC has a good performance in practical applications.

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3

Meng, Qing Duan, Xiao Ling Zhang, Xiao Lei Zhang i Wei Guo Sun. "Finite Element Analysis on Structural Stress of 64×64 InSb Infrared Focal Plane Array". Applied Mechanics and Materials 34-35 (październik 2010): 212–16. http://dx.doi.org/10.4028/www.scientific.net/amm.34-35.212.

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Two-step method is used to research stress and its distribution in 64×64 InSb infrared focal plane array (IRFPA) employing finite element method. First, a small 8×8 InSb IRFPA is systemically studied by varying indium bump diameters, standoff heights and InSb chip thicknesses in suitable range, with indium diameter 30μm, thickness 9μm and InSb thickness 12μm, von Mises stress in InSb chip is the smallest and its distribution is uniform at contacting areas. Then, the sizes of InSb IRFPA is doubled once again from 8×8 to 64×64 to learn the effect from chip sizes, thus, the stress and its distribution of 64×64 InSb IRFPA is obtained in a short time. Simulation results show that von Mises stress maximum in InSb chip almost increases linearly with array scale, yet von Mises stress maximum in Si ROIC decreases slightly with increased array sizes, and the largest von Mises stress is located in InSb chips. Besides, stress distribution on the bottom surface of InSb chip is radiating, and decreases from core to four corners, and stress value at contacting area is smaller than those on its surrounding areas, contrary to stress distribution on top surface of InSb chip.

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4

Meng, Qing Duan, Qing Song Lin, Xiao Lei Zhang i Wei Guo Sun. "Finite Element Analysis on Structural Stress of Large Format InSb Infrared Focal Plane Array". Advanced Materials Research 152-153 (październik 2010): 1721–25. http://dx.doi.org/10.4028/www.scientific.net/amr.152-153.1721.

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Two-step method is used to research stress and its distribution in 64×64 InSb infrared focal plane array (IRFPA) employing finite element method. First, a small 8×8 InSb IRFPA is studied by changing indium bump diameters from 24μm to 36μm, with indium bump thickness 20μm and InSb thickness 10μm, the simulated results show that von Mises stress in InSb chip is dependent on indium bump diameters, the varying tendency is just like the letter V, here when indium bump diameters is set to 30μm, the smallest von Mises stress is achieved and its distribution in InSb chip is uniform at contacting areas. Then, InSb IRFPA array scale is doubled once again from 8×8 to 64×64 to learn the effect from array size, thus, the stress and its distribution of 64×64 InSb IRFPA is obtained in a short time. Simulation results show that von Mises stress maximum in InSb chip and Si readout integrated circuit almost do not increases with array scale, and the largest von Mises stress is located in InSb chips. Besides, stress distribution on the bottom surface of InSb chip is radiating, and decreases from core to four corners, and stress value at contacting area is smaller than those on its surrounding areas, contrary to stress distribution on top surface of InSb chip.

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5

Li, Peng Fei, Zhi Hui Du, Xing Fu Li i Yong Qiang Liu. "A Hardware Method of Realizing IRFPA Nonuniformity Compressing Correction". Applied Mechanics and Materials 427-429 (wrzesień 2013): 1068–71. http://dx.doi.org/10.4028/www.scientific.net/amm.427-429.1068.

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Nonuniformity of Infrared Focal Plane Array (IRFPA) has greatly limited the quality of infrared imaging system, so nonuniformity must be corrected before using IRFPA. In order to reduce nonuniformity correction calculating amount and improve real-time nonuniformity correction speed, a new compressing correction method of utilizing hardware memory is presented. In this paper, memory compressing correction principle and implementing process are expounded in detail, and the hardware circuit diagram is given out. The experimental results prove that the method has simple circuit and excellent image quality and it easily realizes real-time nonuniformity correction.

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6

Manliang Li, Qinzhang Wu i Xiaowei Cao. "IRFPA Integral Time Adaptive Predictive Technology". Journal of Convergence Information Technology 8, nr 5 (15.03.2013): 1257–64. http://dx.doi.org/10.4156/jcit.vol8.issue5.145.

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7

Lu, Fei Bao, Guo Lin Lu, You Shu Huang i Xiang Hui Yuan. "Readout Circuit for Uncooled Pyroelectric IRFPA". Applied Mechanics and Materials 84-85 (sierpień 2011): 284–88. http://dx.doi.org/10.4028/www.scientific.net/amm.84-85.284.

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A 320×240 readout circuit (ROIC) for the uncooled pyroelectric infrared detector was fabricated in the double-poly-double-metal (DPDM) N-well CMOS technology. Composed of X- and Y-shift register, column amplifier and correlated double sampling (CDS) circuit, the readout circuit integrated signal from the detector for frame time. It has the pitch of 50um and power dissipation of less than 50 mW. The circuit configuration, operation and testing result are described. Testing result indicates that the designed circuit meets with the requirement. Thermal images were obtained by the hybrid-integrated sensing array.

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8

Zhang, Li Wen, Jin Chan Wang, Qian Yu i Qing Duan Meng. "Finite Element Analysis on Structural Stress of 16×16 InSb IRFPA with Viscoelastic Underfill". Advanced Materials Research 314-316 (sierpień 2011): 530–34. http://dx.doi.org/10.4028/www.scientific.net/amr.314-316.530.

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The thermal stress and strain, from the thermal mismatch of neighboring materials, are the major causes of fracture in InSb IRFPA. Basing on viscoelastic model describing underfill, the structural stress of 16×16 InSb IRFPA under thermal shock is studied with finite element method. Simulation results show that as the diameters of indium bump increase from 20μm to 36μm in step of 2μm, the maximum stress existing in InSb chip first increases slightly, and fluctuates near 28µm, then decreases gradually. Furthermore, the varied tendency seems to have nothing to do with indium bump standoff height, and with thicker indium bump height, the maximal Von Mises stress in InSb chip is smaller. All these mean that the thicker underfill is in favor of reducing the stress in InSb chip and improving the final yield.

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9

ZHAO, HONGLIANG, YIQIANG ZHAO, YIWEI SONG, JUN LIAO i JUNFENG GENG. "A LOW POWER CRYOGENIC CMOS ROIC DESIGN FOR 512 × 512 IRFPA". Journal of Circuits, Systems and Computers 22, nr 10 (grudzień 2013): 1340033. http://dx.doi.org/10.1142/s0218126613400331.

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A low power readout integrated circuit (ROIC) for 512 × 512 cooled infrared focal plane array (IRFPA) is presented. A capacitive trans-impedance amplifier (CTIA) with high gain cascode amplifier and inherent correlated double sampling (CDS) configuration is employed to achieve a high performance readout interface for the IRFPA with a pixel size of 30 × 30 μm2. By optimizing column readout timing and using two operating modes in column amplifiers, the power consumption is significantly reduced. The readout chip is implemented in a standard 0.35 μm 2P4M CMOS technology. The measurement results show the proposed ROIC achieves a readout rate of 10 MHz with 70 mW power consumption under 3.3 V supply voltage from 77 K to 150 K operating temperature. And it occupies a chip area of 18.4 × 17.5 mm2.

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10

GONG, Hai-Mei, Ya-Ni ZHANG, San-Gen ZHU, Xiao-Kun WANG, Da-Fu LIU, De-Ping DONG, Da YOU i in. "STUDY OF RELIABLE PACKAGING FOR IRFPA DETECTOR". JOURNAL OF INFRARED AND MILLIMETER WAVES 28, nr 2 (14.07.2009): 85–89. http://dx.doi.org/10.3724/sp.j.1010.2009.00085.

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11

Takeda, Munehisa, Hisatoshi Hata, Yoshiyuki Nakaki, Yasuhiro Kosasayama i Masafumi Kimata. "Chip Scale Vacuum Packaging for Uncooled IRFPA". IEEJ Transactions on Fundamentals and Materials 127, nr 7 (2007): 405–10. http://dx.doi.org/10.1541/ieejfms.127.405.

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12

Algamdi, Abdulaziz, i Ahmad Adas. "Novel Technique for IRFPA Blind Pixels Detection". Journal of Advances in Mathematics and Computer Science 15, nr 5 (7.12.2017): 1–16. http://dx.doi.org/10.9734/jamcs/2017/38072.

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13

Sui, Xiubao, Qian Chen, Guohua Gu i Ning Liu. "Multi-sampling and filtering technology of IRFPA". Optik 122, nr 12 (czerwiec 2011): 1037–41. http://dx.doi.org/10.1016/j.ijleo.2010.06.041.

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14

Li, Jia Ying, Yun Chen Jiang i Lei Ren. "Real-Time Infrared Image Non-Uniformity Correction Based on FPGA". Advanced Materials Research 971-973 (czerwiec 2014): 1696–99. http://dx.doi.org/10.4028/www.scientific.net/amr.971-973.1696.

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IRFPA is the main direction of infrared imaging technology at present. It has high sensitivity and detection capability, but it also has disadvantages such as bad non-uniformity. Non-uniformity correction is a key technology in the application of IRFPA. As an applicable and real time non-uniformity correction method, the two-point correction algorithmic and single-point correction algorithmic are used widely. Their flow is simple and fixed. They are also suitable to be implemented by FPGA. In this paper, the two-point and single-point method of non-uniformity correction based on FPGA are introduced. And whether the two-point correction or the single-point correction is taken is determined by external control signal. After the completion of the correction coefficients calculation, the coefficients are written into FLASH so that the data will not be lost when the system is powered off.

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15

LI Ling-xiao, 李凌霄, 冯华君 FENG Hua-jun, 赵巨峰 ZHAO Ju-feng, 徐之海 XU Zhi-hai i 李奇 LI Qi. "Adaptive and fast blind pixel correction of IRFPA". Optics and Precision Engineering 25, nr 4 (2017): 1009–18. http://dx.doi.org/10.3788/ope.20172504.1009.

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16

Chao Shang, 尚超, 王锦春 Jinchun Wang i 张晓兵 Xiaobing Zhang. "Study on non-uniformity of ROIC for IRFPA". Infrared and Laser Engineering 49, nr 8 (2020): 20190581. http://dx.doi.org/10.3788/irla20190581.

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17

Chao Shang, 尚超, 王锦春 Jinchun Wang i 张晓兵 Xiaobing Zhang. "Study on non-uniformity of ROIC for IRFPA". Infrared and Laser Engineering 49, nr 8 (2020): 20190581. http://dx.doi.org/10.3788/irla.27_2019-0581.

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18

CAO Yang, 曹扬, 金伟其 JIN Wei-qi, 刘崇亮 LIU Chong-liang i 刘秀 LIU Xiu. "Adaptive nonuniformity correction and hardware implementation of IRFPA". Optics and Precision Engineering 19, nr 12 (2011): 2985–91. http://dx.doi.org/10.3788/ope.20111912.2985.

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19

Wang, Bing-jian, Shang-qian Liu i Yu-bao Cheng. "New real-time image processing system for IRFPA". Optoelectronics Letters 2, nr 3 (maj 2006): 225–28. http://dx.doi.org/10.1007/bf03033553.

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20

Kirchner, Sara, Sebastien Narinsamy, Alain Sommier, Marta Romano, Meguya Ryu, Junko Morikawa, Jacques Leng, Jean-Christophe Batsale i Christophe Pradère. "Calibration Procedure for Attenuation Coefficient Measurements in Highly Opaque Media Using Infrared Focal Plane Array (IRFPA) Spectroscopy". Applied Spectroscopy 72, nr 2 (9.01.2018): 177–87. http://dx.doi.org/10.1177/0003702817736320.

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The purpose of this article is to present a new calibration procedure for spectroscopic measurements using an infrared focal plane array (IRFPA) spectrometer on highly opaque middle-wave infrared (MWIR) media. The procedure is based on the properties of the IRFPA camera and especially the integration time (IT), which is the main parameter that can be adjusted to control the sensitivity of the measurements. The goal of the paper is to experimentally validate this dependence with the direct reference intensity light coming out of the IR monochromator in order to predict the spectrum shape and intensity level in a range out of the camera saturation. This method allows determining spectrum used as background for transmittance calculation. It has been applied in the case of measurement of water transmittance, which is a highly opaque medium and whose measurement requires high ITs. The main result is the ability to take an IR spectroscopic imaging measurement through 300 µm of water and the determination of its transmittance with sufficient sensitivity due to the proposed calibration procedure. This procedure allows the possibility of transitory studies in heterogeneous aqueous media.

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21

Zhai Yongcheng, 翟永成, i 丁瑞军 Ding Ruijun. "320×256 LW IRFPA ROIC with large charge capacity". Infrared and Laser Engineering 45, nr 9 (2016): 0904003. http://dx.doi.org/10.3788/irla201645.0904003.

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22

Leng Hanbing, 冷寒冰, 谢庆胜 Xie Qingsheng, 刘伟 Liu Wei, 易波 Yi Bo, 唐利孬 Tang Linao i 张建 Zhang Jian. "Adaptive Nonuniformity Correction for IRFPA Based on Bayesian Estimation". Acta Optica Sinica 34, nr 9 (2014): 0910001. http://dx.doi.org/10.3788/aos201434.0910001.

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23

Zhai Yongcheng, 翟永成, i 丁瑞军 Ding Ruijun. "320×256 LW IRFPA ROIC with large charge capacity". Infrared and Laser Engineering 45, nr 9 (2016): 904003. http://dx.doi.org/10.3788/irla20164509.904003.

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24

Deng Honghai, 邓洪海, 杨. 波. Yang Bo, 邵海宝 Shao Haibao, 王志亮 Wang Zhiliang, 黄. 静. Huang Jing, 李. 雪. Li Xue i 龚海梅 Gong Haimei. "Extended-wavelength In0.8Ga0.2As IRFPA detector arrays for front-illumination". Infrared and Laser Engineering 47, nr 5 (2018): 504004. http://dx.doi.org/10.3788/irla201847.0504004.

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25

Poncelet, Martin, Jean-François Witz, Hervé Pron i Bertand Wattrisse. "A study of IRFPA camera measurement errors: radiometric artefacts". Quantitative InfraRed Thermography Journal 8, nr 1 (czerwiec 2011): 3–20. http://dx.doi.org/10.3166/qirt.8.3-20.

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26

Liberatore, Nicola, Andrea Pifferi, Silvio Perri i Maria Elena Marini. "Test bench for IRFPA based on CMT and microbolometer". Infrared Physics & Technology 43, nr 3-5 (czerwiec 2002): 291–96. http://dx.doi.org/10.1016/s1350-4495(02)00154-8.

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27

Shi, Yan, Tianxu Zhang i Zhiguo Cao. "A New Piecewise Approach for Nonuniformity Correction in IRFPA". International Journal of Infrared and Millimeter Waves 25, nr 6 (czerwiec 2004): 959–72. http://dx.doi.org/10.1023/b:ijim.0000030794.99960.dc.

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28

Sen, Sanghamitra, Herbert L. Hettich, David R. Rhiger, Stephen L. Price, Malcolm C. Currie, Robert P. Ginn i Eugene O. McLean. "CdZnTe substrate producibility and its impact on IRFPA yield". Journal of Electronic Materials 28, nr 6 (czerwiec 1999): 718–25. http://dx.doi.org/10.1007/s11664-999-0060-8.

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29

Geng, Lixiang, Qian Chen i Weixian Qian. "An Adjacent Differential Statistics Method for IRFPA Nonuniformity Correction". IEEE Photonics Journal 5, nr 6 (grudzień 2013): 6801615. http://dx.doi.org/10.1109/jphot.2013.2293614.

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30

Liu, Jing, Xia Wang, Wei-qi Jin i Chao Xu. "Crosstalk Model Based on Neighboring Elements for Small Element IRFPA". Journal of Electronics & Information Technology 33, nr 9 (30.09.2011): 2231–36. http://dx.doi.org/10.3724/sp.j.1146.2010.00919.

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31

Sheng, Meng, Juntang Xie i Ziyuan Fu. "Calibration-based NUC Method in Real-time Based on IRFPA". Physics Procedia 22 (2011): 372–80. http://dx.doi.org/10.1016/j.phpro.2011.11.058.

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32

Chuan, ChenDa, LiJing Quan, ShiJing Yuan i Chen Ding. "Blind Pixels Auto-Searching Algorithm for IRFPA based on Scene". Energy Procedia 17 (2012): 1662–66. http://dx.doi.org/10.1016/j.egypro.2012.02.295.

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33

DAI, S. s., i T. q. ZHANG. "A Nonlinear Piecewise Scheme for Non-uniformity Correction in IRFPA". IEICE Transactions on Electronics E91-C, nr 10 (1.10.2008): 1698–701. http://dx.doi.org/10.1093/ietele/e91-c.10.1698.

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34

Meng, Qing Duan, Xiao Ling Zhang, Xiao Lei Zhang i Wei Guo Sun. "Finite Element Analysis on Structural Stress of 8×8 InSb Infrared Focal Plane Array". Applied Mechanics and Materials 34-35 (październik 2010): 207–11. http://dx.doi.org/10.4028/www.scientific.net/amm.34-35.207.

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Based on viscoplastic Anand’s model, the structural stress of 8×8 InSb infrared focal plane array (IRFPA) detector is systemically analyzed by finite element method, and the impacts of design parameters including indium bump diameters, heights and InSb chip thicknesses on both von Mises stress and its distribution are discussed in this manuscript. Simulation results show that as the diameters of indium bump decreases from 36 μm to 24 μm in step of 2 μm, the maximum stress existing in InSb chip reduces first, increases then linearly with reduced indium bump diameters, and reaches minimum with indium bump diameter 30 μm, the stress distribution at the contacts areas is uniform and concentrated. Furthermore, the varied tendency has nothing to do with indium bump standoff height. With indium bump diameter 30 μm, as the thickness of InSb chip reduces from 21 μm to 9 μm in step of 3 μm, the varying tendency of the maximum stress value in InSb chip is just like the letter U, as the indium bump thickness decreases also from 21 μm to 6 μm in step of 3 μm, the maximum stress in 8×8 InSb IRPFA decreases from 260 MPa to 102 MPa, which is the smallest von Mises stress value obtained with the indium diameter 30 μm, thickness 9 μm and InSb thickness 12 μm.

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35

Huan, Zhan Hua, He Meng Yang i Meng Zhu. "A New Method for Improving Infrared Image Quality and its System Implementation". Applied Mechanics and Materials 130-134 (październik 2011): 2989–92. http://dx.doi.org/10.4028/www.scientific.net/amm.130-134.2989.

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To obtain high-quality infrared image real-timely, a new correction enhancement method is proposed. The method can both compensate nonuniformity of IRFPA by using calibration-based piecewise polynomial interpolation correction algorithm and increase image contrast by using histogram-based adaptive threshold image enhancement algorithm. The experiment is performed by carrying out the method in an embedded imaging system. The results show that the system can process infrared image real-timely and the processed image is clear with high signal to noise ratio.

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36

Cui Kun, 崔坤, 陈凡胜 Chen Fansheng, 苏晓锋 Su Xiaofeng i 蔡萍 Cai Ping. "Adaptive non-uniformity correction method for IRFPA with integration time changing". Infrared and Laser Engineering 46, nr 11 (2017): 1104001. http://dx.doi.org/10.3788/irla201746.1104001.

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Li Jun, 李. 俊., 王小坤 Wang Xiaokun, 孙. 闻. Sun Wen, 林加木 Lin Jiamu, 曾智江 Zeng Zhijiang, 沈一璋 Shen Yizhang, 范广宇 Fan Guangyu, 丁瑞军 Ding Ruijun i 龚海梅 Gong Haimei. "Study on Dewar package for dual-band long linear IRFPA detectors". Infrared and Laser Engineering 47, nr 11 (2018): 1104003. http://dx.doi.org/10.3788/irla201847.1104003.

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38

Li, Bing, Zheng Yu Yang i Bao Ma. "Research of IRFPA Non-uniformity Real-Time Correction Based on SOPC". Key Engineering Materials 474-476 (kwiecień 2011): 277–82. http://dx.doi.org/10.4028/www.scientific.net/kem.474-476.277.

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<b>N</b>on-uniformity of infrared focal plane arrays (IRFPA) decreases the quality of the infrared imaging system greatly, so it is necessary to correct non-uniformity. Now the scene-based correction is being the focus of the study at home and abroad. Firstly, researching on normalized BP artificial neural network correction method in this paper, and then building a SOPC system on Altera's Stratix II EP2S60 DSP Development Board to realize the normalized BP real-time correction non-uniformity. The simulation results show that the SOPC system would meet the requirements of real-time correction. At the same time, the other method could be better to upgrade.

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39

Mingwu, Chen, i Wu Haibin. "The Industrial Temperature Measurement System Based on the Uncooled IRFPA Detector". Advances in Networks 7, nr 1 (2019): 1. http://dx.doi.org/10.11648/j.net.20190701.11.

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40

Bai, Junqi, Hongyi Hou, Chunguang Zhao, Ning Sun i Xianya Wang. "Adaptive nonuniformity correction for IRFPA sensors based on neural network framework". Journal of Systems Engineering and Electronics 23, nr 4 (sierpień 2012): 618–24. http://dx.doi.org/10.1109/jsee.2012.00077.

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41

Shi, Yan, Tianxu Zhang, Zhiguo Cao i Li Hui. "A feasible approach for nonuniformity correction in IRFPA with nonlinear response". Infrared Physics & Technology 46, nr 4 (kwiecień 2005): 329–37. http://dx.doi.org/10.1016/j.infrared.2004.05.003.

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42

Würfel, D., i H. Vogt. "An improved electrical and thermal model of a microbolometer for electronic circuit simulation". Advances in Radio Science 10 (18.09.2012): 183–86. http://dx.doi.org/10.5194/ars-10-183-2012.

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Abstract. The need for uncooled infrared focal plane arrays (IRFPA) for imaging systems has increased since the beginning of the nineties. Examples for the application of IRFPAs are thermography, pedestrian detection for automotives, fire fighting, and infrared spectroscopy. It is very important to have a correct electro-optical model for the simulation of the microbolometer during the development of the readout integrated circuit (ROIC) used for IRFPAs. The microbolometer as the sensing element absorbs infrared radiation which leads to a change of its temperature due to a very good thermal insulation. In conjunction with a high temperature coefficient of resistance (TCR) of the sensing material (typical vanadium oxide or amorphous silicon) this temperature change results in a change of the electrical resistance. During readout, electrical power is dissipated in the microbolometer, which increases the temperature continuously. The standard model for the electro-optical simulation of a microbolometer includes the radiation emitted by an observed blackbody, radiation emitted by the substrate, radiation emitted by the microbolometer itself to the surrounding, a heat loss through the legs which connect the microbolometer electrically and mechanically to the substrate, and the electrical power dissipation during readout of the microbolometer (Wood, 1997). The improved model presented in this paper takes a closer look on additional radiation effects in a real IR camera system, for example the radiation emitted by the casing and the lens. The proposed model will consider that some parts of the radiation that is reflected from the casing and the substrate is also absorbed by the microbolometer. Finally, the proposed model will include that some fraction of the radiation is transmitted through the microbolometer at first and then absorbed after the reflection at the surface of the substrate. Compared to the standard model temperature and resistance of the microbolometer can be modelled more realistically when these higher order effects are taken into account. A Verilog-A model for electronic circuit simulations is developed based on the improved thermal model of the microbolometer. Finally, a simulation result of a simple circuit is presented.

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CHEN Shi-wei, 陈世伟, 杨小冈 YANG Xiao-gang, 张胜修 ZHANG Sheng-xiu i 王一 WANG Yi. "Research on Nonuniformity Correction Algorithm of IRFPA Based on Adjusting Integral Time". ACTA PHOTONICA SINICA 42, nr 4 (2013): 475–79. http://dx.doi.org/10.3788/gzxb20134204.0475.

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LENG Han-bing, 冷寒冰, 周祚峰 ZHOU Zuo-feng, 易波 YI Bo, 张建 ZHANG Jian, 闫阿奇 YAN A-qi, 王浩 WANG Hao i 曹剑中 CAO Jian-zhong. "Improved Non-uniformity Correction Algorithm Based on Integration Time Calibration for IRFPA". ACTA PHOTONICA SINICA 43, nr 1 (2014): 110002. http://dx.doi.org/10.3788/gzxb20144301.0110002.

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DAI, Shao-sheng, i Tian-qi ZHANG. "An Improved Non-uniformity Correction Algorithm for IRFPA Based on Neural Network". IEICE Transactions on Electronics E92-C, nr 5 (2009): 736–39. http://dx.doi.org/10.1587/transele.e92.c.736.

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HWANG, Chi Ho, Doo Hyung WOO i Hee Chul LEE. "Pixel-Level ADC with Two-Step Integration for 2-D Microbolometer IRFPA". IEICE Transactions on Electronics E94-C, nr 12 (2011): 1909–12. http://dx.doi.org/10.1587/transele.e94.c.1909.

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Shi, Chun Lei, Guang Yuan Jiang, Guang Min Yang i Shi Xin. "Two-Point Multi-Section Linear Nonuniformity Correction of IRFPA Based on FPGA". Applied Mechanics and Materials 263-266 (grudzień 2012): 3194–97. http://dx.doi.org/10.4028/www.scientific.net/amm.263-266.3194.

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The two-point multi-section method has higher precision than two-point correction algorithm and had lower operation load than multi-point correction algorithm. We realized the two-point multi-section method by the use of FPGA hardware module.

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Wang, BingJian, ShangQian Liu i LiPing Bai. "An enhanced non-uniformity correction algorithm for IRFPA based on neural network". Optics Communications 281, nr 8 (kwiecień 2008): 2040–45. http://dx.doi.org/10.1016/j.optcom.2007.12.008.

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Lu, W. L., Z. W. Hwang i L. S. Lu. "CMOS 80 K-300 K SPICE Parameter for IRFPA Readout Circuit Design". Le Journal de Physique IV 06, nr C3 (kwiecień 1996): C3–199—C3–206. http://dx.doi.org/10.1051/jp4:1996330.

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Zhao, Gongyuan, Mao Ye, Kai Hu i Yiqiang Zhao. "A ROIC for Diode Uncooled IRFPA With Hybrid Non-Uniformity Compensation Technique". IEEE Sensors Journal 18, nr 2 (15.01.2018): 501–7. http://dx.doi.org/10.1109/jsen.2017.2773538.

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