Gotowe bibliografie tematyczne / Ion Beam Analysis

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Gotowa bibliografia na temat „Ion Beam Analysis”

Autor: Grafiati

Data publikacji: 4 czerwca 2021

Data aktualizacji: 25 maja 2024

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Artykuły w czasopismach na temat "Ion Beam Analysis"

Pathak, Anand P., Devesh K. Avasthi i Bhupendra N. Dev. "Ion beam analysis". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 266, nr 8 (kwiecień 2008): iii. http://dx.doi.org/10.1016/j.nimb.2008.03.093.

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FUJIMOTO, Fuminori. "Ion beam analysis." Bunseki kagaku 40, nr 11 (1991): 577–97. http://dx.doi.org/10.2116/bunsekikagaku.40.11_577.

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Kramer, Edward J. "Ion-Beam Analysis of Polymer Surfaces and Interfaces". MRS Bulletin 21, nr 1 (styczeń 1996): 37–42. http://dx.doi.org/10.1557/s0883769400035144.

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Ion-beam analysis of chemical composition as a function of depth is by now well-established for inorganic materials and is an important method of investigating growth of thin films. It has been applied to polymers much more recently, perhaps because fairly obvious problems with radiation damage discouraged workers in this field initially. Ion-beam analysis has developed, however, into a analytical tool that complements other methods, such as x-ray photoelectron spectroscopy and neutron reflection, very well. The purpose of this short article is to give the reader an introduction to its current uses in polymers.The ion beams of ion-beam analysis are typically highly energetic (1–5 MeV) beams of 4He++. While other beams are used, for example, 3He and 15N, alpha particle beams are used in the vast majority of experiments reported in the literature. Two major categories of experiments are carried out with such beams. Rutherford backscattering (RBS) spectrometry to detect heavy elements in the polymer and forward recoil spectrometry (FRES) (also known as elastic recoil detection) to detect the isotopes hydrogen and deuterium. The basic principles for each method are similar.

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Al-Bayati, A. H., K. G. Orrman-Rossiter, D. G. Armour, J. A. Van den Berg i S. E. Donnelly. "Ion beam deposition and in-situ ion beam analysis". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 63, nr 1-2 (styczeń 1992): 109–19. http://dx.doi.org/10.1016/0168-583x(92)95179-u.

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Mingay, D. W., V. M. Prozesky i P. B. Kotzé. "Prompt ion beam analysis by pulsed beams". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 35, nr 3-4 (grudzień 1988): 339–43. http://dx.doi.org/10.1016/0168-583x(88)90293-5.

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Cookson, J. A., i T. W. Conlon. "MeV ion-beam analysis". Journal of Research of the National Bureau of Standards 93, nr 3 (maj 1988): 473. http://dx.doi.org/10.6028/jres.093.123.

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Ishii, Yasuyuki, i Takeru Ohkubo. "Analysis of Ion-Species of a Dedicated Duoplasmatron-type Ion Source for a 100 keV-Rage Compact Ion-Microbeam System". Journal of Physics: Conference Series 2326, nr 1 (1.10.2022): 012013. http://dx.doi.org/10.1088/1742-6596/2326/1/012013.

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Abstract Hydrogen-ion beam species generated by a dedicated duoplasmatron-type ion source that was developed for a MeV compact ion-microbeam system was experimentally analyzed in a test bench to study the ion source feature. Bimolecular and trimolecular hydrogen-ion beams were mainly generated by the duoplasmatron-type ion source. The ratio of the two different molecular hydrogen-ion beams was controlled by turning hydrogen-gas pressure. This experiment showed that the duoplasmatron-type ion source could produce a single molecular hydrogen-ion beam for ion-microbeam applications.

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Bahng, Jungbae, Yuncheol Kim, Young-woo Lee, Jinsung Yu, Seung-Hee Nam, Bong-Hyuk Choi i Yongbae Jeon. "Multi-filament ion source for uniform ion beam generation". Journal of Physics: Conference Series 2743, nr 1 (1.05.2024): 012054. http://dx.doi.org/10.1088/1742-6596/2743/1/012054.

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Abstract Ion beams are employed in various fields such as semiconductor manufacturing, surface modification and material science. The uniformity of ion beams is crucial in many applications, but conventional ion sources that use a single filament often limit the uniformity and intensity of the ion beam. This paper presents a study that aims to optimize a multi-filament ion source to enhance the uniformity of ion beams. The study includes a detailed explanation of the ion source components and design, methods for measuring ion beam uniformity with its experimental design, followed by results, analysis, discussions and conclusions, completed by suggestions for future research directions. The experimental results demonstrate that the use of a multi-filament ion source improves ion beam uniformity compared to a single-filament ion source. An optimal design for the ion source components and new approaches for improving ion beam uniformity are described. The study’s results provide important information for improving ion beam uniformity and offer a technical basis for providing high-quality products and services in various industries.

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Matuo, Youichirou, Yoshinobu Izumi, Ayako N. Sakamoto, Yoshihiro Hase, Katsuya Satoh i Kikuo Shimizu. "Molecular Analysis of Carbon Ion-Induced Mutations in DNA Repair-Deficient Strains of Saccharomyces cerevisiae". Quantum Beam Science 3, nr 3 (2.07.2019): 14. http://dx.doi.org/10.3390/qubs3030014.

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Mutations caused by ion beams have been well-studied in plants, including ornamental flowers, rice, and algae. It has been shown that ion beams have several significantly interesting features, such as a high biological effect and unique mutation spectrum, which is in contrast to low linear energy transfer (LET) radiation such as gamma rays. In this study, the effects of double strand breaks and 8-oxo-2′-deoxyguanosine (8-oxodG) caused by ion-beam irradiation were examined. We irradiated repair-gene-inactive strains rad52, ogg1, and msh2 using carbon ion beams, analyzed the lethality and mutagenicity, and characterized the mutations. High-LET carbon ion-beam radiation was found to cause oxidative base damage, such as 8-oxodG, which can lead to mutations. The present observations suggested that nucleotide incorporation of oxidative damage gave only a limited effect on cell viability and genome fidelity. The ion-beam mutations occurred predominantly in 5′-ACA-3′ sequences, and we detected a hotspot at around +79 to +98 in URA3 in wild-type and mutant lines, suggesting the presence of a mutation-susceptible region.

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Martinsson, Bengt G., i Hans-Christen Hansson. "Ion beam thermography — analysis of chemical compounds using ion beam techniques". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 34, nr 2 (sierpień 1988): 203–8. http://dx.doi.org/10.1016/0168-583x(88)90744-6.

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Rozprawy doktorskie na temat "Ion Beam Analysis"

Boudreault, Ghislain. "Accurate ion beam analysis". Thesis, University of Surrey, 2002. http://epubs.surrey.ac.uk/844001/.

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This thesis primarily deals with accuracy obtainable when using IBA (Ion Beam Analysis) techniques to characterize materials. RBS (Rutherford Backscattering Spectrometry) is the main technique used, together with EBS (Elastic Backscattering Spectrometry), ERDA (Elastic Recoil Detection Analysis) and NRA (Nuclear Reaction Analysis). An exhaustive literature review on these analytical methods is made in connection with accuracy issues such as stopping powers and multiple scattering. The experimental set-ups and procedures are described, with emphasis laid on critical aspects of work where the highest accuracy is required. The instrumentation for dosimetry on ion implanters is first estabhshed at the 1% level for high-dose heavy implants in silicon. A new parameterisation of He stopping power in Si is used, and this latter material, via the surface yield, is used as a calibration standard. A precision (standard uncertainty) in the determination of implantation doses by RBS is conclusively demonstrated at 1.5%. The IBA DataFurnace code is validated for such accurate analysis, which can now be made routinely and rapidly. The certified Sb sample IRMM-302/BAM-L001, which has a certification of 0.6% traceable to the international standard of weight in Paris, is measured, and more importantly this measurement demonstrates the reliability of the stopping power parameterisation at 1.4%. Using conventional ERDA, the H dose of an amorphised Si wafer, implanted with 6-keV H+ ions, is found to be 57.8(1.0)x1015 at/cm2, which is a 1.8% standard uncertainty. The estimated combined uncertainty of this measurement is ~6%, and this mainly comes from the determination of the ERDA solid angle by using standard Kapton. The Kapton composition is carefully determined using RBS. The RBS solid angle is obtained using the amorphised silicon surface yield as a calibration standard as in the dosimetry analysis mentioned above. The ERDA H absolute dose obtained is compared with the results from other participants from all over the world in a Round Robin exercise, which includes measurements by using both He-ERDA and HI-ERDA (Heavy Ion-ERDA) together using various detectors. The results from each participant are given and compared. The overall absolute dose obtained of the implant is 57.0(1.2)x1015 H/cm2, and this represents an inter-lab reproducibility of 2.2% (standard uncertainty). Unstable surface hydrogen contamination was observed, and this surface peak was resolved by some of the methods. This implant can now be used as a standard for quantitative analysis of hydrogen. Low-fluorine content SiO2:F films are analysed by RBS for absolute fluorine concentration determination. Prior to the RBS analysis, the uniformity of the films and stability of F under beam irradiation is investigated. Because the RBS is not very sensitive to F and the F signal has a large matrix background, an internally consistent method of data handling, which enables the relative collected charge to be determined very precisely for the spectra from different samples, is developed. This method has as a parameter the F content, which is then extracted iteratively. A F concentration of 10 at% is determined with an estimated uncertainty of 10% (one percentage point, i.e. 10 +/- 1%). The O stopping powers are found to be the main factor governing the accuracy of the absolute determination of the F content. All the other uncertainties add up to only ~1%. The elemental composition of residual deposits from an ion implanter is thoroughly investigated using several complementary analytical methods, namely, RBS, BBS and NRA. Preliminary SEM/EDAX results are used as a guide. Depth profiles of such non-homogeneous, non-fiat and brittle samples are obtained, which give an indication of the concentration of each element present. From this complete IBA elemental study, some unprecedented light is brought on both the history of the implanter and the way in which these deposits are formed. Such an investigation is essential for a better understanding and the development/miniaturisation of semiconductors as it impressively pushes the boundaries of accuracy obtainable in IBA material characterisation.

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Müggenburg, Jan. "Ion beam analysis of metallic vanadium superlattices : Ion beam analysis of metallic vanadium superlattices". Thesis, Uppsala universitet, Tillämpad kärnfysik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-328067.

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Messerly, Michael Joseph. "Ion-beam analysis of optical coatings". Diss., The University of Arizona, 1987. http://hdl.handle.net/10150/184273.

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Rutherford backscattering spectrometry (RBS) is shown to be an elegant, powerful tool for the chemical characterization of optical coatings. RBS studies of several thin film materials are presented to illustrate the technique's unique abilities, and to show how RBS is best exploited in investigations of thin film stoichiometry and diffusion. The text begins with an introduction to optical coatings and the practical problems encountered in their implementation. The basic principles of RBS are discussed, and the technique is compared to other popular surface analysis tools. The introductory material concludes with a chapter devoted to specific techniques for RBS data and error analysis, including the derivation of a simple formula for determining the optimum thickness of multi-element samples. The accurate stoichiometric measurements provided by RBS give new insights into the chemical structure of ion-bombarded MgF₂ coatings. The analysis shows that lightly-bombarded coatings contain a small oxygen fraction (< 6%), and the absence of this oxygen in opaque, heavily-bombarded samples implies the oxygen compensates for fluorine deficiencies and is therefore an essential ingredient for transparent films. This beneficial oxygen appears to diffuse into the coatings along columnar voids, and the implied compromise between packing density and transparency is discussed. The final chapter takes advantage of the nondestructive depth-profiles provided by RBS. We present the first direct experimental verification of the interfacial oxide layer responsible for the superior adhesion of aluminum to glass, and show that contrary to popular belief, the layer is not an artifact of oxygen adsorbed during the aluminum's evaporation. We then discuss the diffusion of copper through silver films, and show that the migration is enhanced by exposure to the RBS probe beam. Finally, we consider the diffusion of carbon, from graphite substrates, into the voids of porous coatings during the RBS measurements. This effect, like the enhanced copper diffusion, is consistent with a low temperature, measurement-induced anneal; however, we show that the migrant carbon does not alter the chemical structure of the coatings, but instead serves as a convenient, non-intrusive indicator of film porosity.

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Gauntlett, F. E. "Novel applications of ion beam analysis techniques". Thesis, University of Surrey, 2009. http://epubs.surrey.ac.uk/842938/.

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Ion beam analysis (IBA) has been used as a powerful tool for studying materials for many years. Depending on the specific experimental design, IBA techniques can provide a non-destructive means of analysing samples to obtain such information as the elements or isotopes present and diffusion or depth profiles. Ion beam analysis has the ability to keep up with the rapid progress in new materials both as technology improves and as scientists have the creativity to develop existing and new techniques. Many different types of IBA exist. The experiments reported in this thesis were carried out using backscattering of the beam ions, ion induced X-ray emission, and ion induced nuclear reactions. The two experimental projects involved the use of modem cadmium-telluride detectors, including a unique array of CdZnTe detectors. The subsidiary project investigated using nuclear reaction measurements to study moisture diffusing into epoxy resin bonded with aluminium. Current standard techniques cannot measure diffusion profiles directly, resulting predictions rely on assumptions as to the particular mode of moisture migration. I have shown that the ion beam analysis technique can be applied to directly study moisture diffusion profiles parallel and perpendicular to the interfacial region whilst the bond remains intact. Further use of the technique would be of importance in studying the effect of moisture on bond integrity in automotive and aerospace industries - this would result in better predictions of the longevity of adhesive joints. For the main experiment, novel ion beam methods were developed to characterise, for the first time non-destructively, gold flecks dispersed within low density foam cylinders. The techniques allow the measurement of both the mass of gold in the cylinders and the average size of the individual gold flecks. Several different problems not previously encountered in ion beam analyses have been addressed and understood.

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Shearmur, Thomas E. "Ion beam analysis of diffusion in polymers". Thesis, University of Surrey, 1996. http://epubs.surrey.ac.uk/844449/.

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With the rapid spread in use of polymers the study of diffusion in them is becoming increasingly important. For a number of industrial processes diffusion coefficients and elemental distributions need to be quantified precisely. From a more scientific approach accurate models need to be devised to describe the various diffusion mechanisms involved as well as the concentration and temperature dependencies of the diffusion coefficients. Using ion beam analysis techniques (Rutherford Backscattering and Nuclear Reaction Analysis) three systems were studied. The first was an industrially relevant system of relatively small dye molecules diffusing into a number of different polymer matrices. For fixed diffusion settings, diffusion coefficients were measured and found to correlate with the matrix glass transition temperatures. Surface dye concentrations, on the other hand, were independent of matrix properties. The other two systems studied involved polymer interdiffusion. Based on different assumptions, two contradictory theories have been developed to describe the concentration dependence of the mutual diffusion coefficient; the 'slow' and 'fast' theories. In one system, blends of low molecular weight (unentangled) polystyrene and poly(methyl methacrylate) our data followed the 'slow' theory at low temperatures and the 'fast' theory at high temperatures. An equation describing the concentration dependence of the mutual diffusion coefficient at all intermediate annealing temperatures (hence linking the 'slow' and 'fast' theories) was developed and found to describe the data accurately. In the second system, blends of entangled poly(methyl methacrylate) of several molecular weights, the mutual diffusion coefficient was found to follow the 'fast' theory at all studied temperatures. In all three systems the temperature dependence of the tracer diffusion coefficients of the various components were accurately described by the semi-empirical equations of the Free Volume theory.

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Healy, M. J. F. "The development of MeV ion beam analysis techniques". Thesis, Cranfield University, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.403621.

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Jenneson, P. M. "Ion beam analysis of molecular diffusion in heterogeneous materials". Thesis, University of Surrey, 1998. http://epubs.surrey.ac.uk/844259/.

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Scanning ion micro-beam analysis has been used to determine the diffusion of molecules in materials with a combination of high spatial resolution and concentration sensitivity not possible with other analytical techniques. The ion beam analysis apparatus and techniques available at the University of Surrey are described. Methodologies have been devised to determine the scanning micro-beam line scan size and the diameter of the beam spot. Adaptations to the micro-beam line hardware have been proposed with the design of a novel form of none interrupting beam current monitor utilising a transmission Faraday cup and charge collection from the object aperture. Micro-Nuclear Reaction Analysis (NRA) has been used for the first time to resolve the location and concentration of a hydrocarbon molecule in a biological matrix. Deuterated molecules (a surfactant and a hair conditioning agent) were imaged in perm damaged and undamaged hair fibres. Natural deuterium levels were ascertained with reference to a virgin hair fibre. Profiles of chlorine diffusing into cement paste blends have been determined using micro-Particle Induced X-ray Emission (PIXE). The profiles were fitted with a semi-infinite model of Fickian diffusion. The analysis was combined with micro-NRA to simultaneously profile the aqueous carrier (deuterium oxide) with the diffusing chlorine. A combination of micro-PIXE and micro-NRA has been used for the first time to image the ingress of water (deuterium oxide) and subsequent redistribution of drug in a polymeric drug release system. The two dimensional distributions of water, drug, and polymeric matrix are statistically correlated.

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Chaffee, Kevin Paul. "Ion beam analysis of diffusion in diamondlike carbon films". Case Western Reserve University School of Graduate Studies / OhioLINK, 1991. http://rave.ohiolink.edu/etdc/view?acc_num=case1055777288.

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Tucker, Thomas Marshall. "Three dimensional measurement data analysis in stereolithography rapid prototyping". Thesis, Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/17082.

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Smith, Richard W. "A study of small molecule ingress into planar and cylindrical materials using ion beam analysis". Thesis, University of Surrey, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.390579.

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Książki na temat "Ion Beam Analysis"

Jalabert, Denis, Ian Vickridge i Amal Chabli. Swift Ion Beam Analysis in Nanosciences. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2017. http://dx.doi.org/10.1002/9781119005063.

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Wang, Yongqiang. Handbook of modern ion beam materials analysis. Wyd. 2. Warrendale, PA: Materials Research Society, 2009.

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R, Tesmer Joseph, i Nastasi Michael Anthony 1950-, red. Handbook of modern ion beam materials analysis. Pittsburgh, Pa: Materials Research Society, 1995.

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Wang, Yongqiang. Handbook of modern ion beam materials analysis. Wyd. 2. Warrendale, PA: Materials Research Society, 2009.

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Komarov, F. F. Non-destructive ion beam analysis of surfaces. New York: Gordon and Breach Science Publishers, 1990.

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Götz, Gerhard, Prof. Dr. sc. nat. i Gärtner Konrad, red. High energy ion beam analysis of solids. Berlin: Akademie-Verlag, 1988.

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International Conference on Ion Beam Analysis (11th 1993 Balatonfüred, Hungary). Ion beam analysis: Proceedings of the eleventh International Conference on Ion Beam Analysis, Balatonfüred, Hungary, July 5-9, 1993. Redaktor Gyulai J. Amsterdam: North-Holland, 1994.

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Wang, Yongqiang. Handbook of modern ion beam materials analysis: Appendices. Wyd. 2. Warrendale, PA: Materials Research Society, 2009.

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Wang, Yongqiang. Handbook of modern ion beam materials analysis: Appendices. Wyd. 2. Warrendale, PA: Materials Research Society, 2009.

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International, Conference on Ion Beam Analysis (10th 1991 Eindhoven The Netherlands). Ion beam analysis: Proceedings of the Tenth International Conference on Ion Beam Analysis, Eindhoven, The Netherlands, 1-5 July, 1991. Amsterdam: North-Holland, 1992.

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Części książek na temat "Ion Beam Analysis"

Avasthi, D. K., i G. K. Mehta. "Ion Beam Analysis". W Swift Heavy Ions for Materials Engineering and Nanostructuring, 67–85. Dordrecht: Springer Netherlands, 2011. http://dx.doi.org/10.1007/978-94-007-1229-4_3.

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Schmidt, Bernd, i Klaus Wetzig. "Ion Beam Technology". W Ion Beams in Materials Processing and Analysis, 33–116. Vienna: Springer Vienna, 2012. http://dx.doi.org/10.1007/978-3-211-99356-9_3.

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Šmit, Ž. "Ion-Beam Analysis Methods". W Modern Methods for Analysing Archaeological and Historical Glass, 155–83. Oxford, UK: John Wiley & Sons Ltd, 2013. http://dx.doi.org/10.1002/9781118314234.ch7.

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Dresselhaus, M. S., i R. Kalish. "Ion Beam Analysis Techniques". W Ion Implantation in Diamond, Graphite and Related Materials, 38–58. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-77171-2_4.

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Rupertus, Volker. "Ion Beam Spectrochemical Analysis (IBSCA)". W Surface and Thin Film Analysis, 357–66. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527636921.ch22.

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Yamamoto, Shunya. "Ion Beam Analysis of Materials". W An Advanced Course in Nuclear Engineering, 145–62. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7350-2_12.

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Valković, Vlado. "Ion Beam Analysis: Analytical Applications". W Low Energy Particle Accelerator-Based Technologies and Their Applications, 149–222. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003033684-3.

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Schmidt, Bernd, i Klaus Wetzig. "Ion Beam Preparation of Materials". W Ion Beams in Materials Processing and Analysis, 253–300. Vienna: Springer Vienna, 2012. http://dx.doi.org/10.1007/978-3-211-99356-9_5.

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Petzold, G., P. Siebert i J. Müller. "A Micromachined Electron Beam Ion Source". W Micro Total Analysis Systems 2000, 171–74. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-017-2264-3_40.

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Sakamoto, Tetsuo. "Focused Ion Beam Scanning Electron Microscope". W Compendium of Surface and Interface Analysis, 181–86. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-6156-1_31.

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Streszczenia konferencji na temat "Ion Beam Analysis"

Toussaint, U. v. "Bayesian analysis of ion beam diagnostics". W The twentieth international workshop on bayesian inference and maximum entropy methods in science and engineering. AIP, 2001. http://dx.doi.org/10.1063/1.1381922.

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Schaaf, Peter, Christof Illgner, Felix Landry i Klaus-Peter Lieb. "Laser nitriding and ion beam analysis". W The fifteenth international conference on the application of accelerators in research and industry. AIP, 1999. http://dx.doi.org/10.1063/1.59282.

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Klatt, Ch, B. Hartmann i S. Kalbitzer. "Accelerator limitations to ion beam analysis". W The fourteenth international conference on the application of accelerators in research and industry. AIP, 1997. http://dx.doi.org/10.1063/1.52540.

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He, Chun, Z. Postawa, S. Rosencrance, R. Chatterjee, D. E. Reiderer, B. J. Garrison i N. Winograd. "Effects of Valence Electron Shell Structure on Ion Beam Sputtered Neutrals". W Laser Applications to Chemical and Environmental Analysis. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/lacea.1996.lthd.7.

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Energetic ion impact on a solid initiates a complex dynamical chain of events which include atomic motion, electronic excitation, ionization, and desorption of atomic and molecular species. Measurements on the desorbed particles during the ion-solid interaction process provide a valuable opportunity to understand the ion-solid interactions.[1-2] For more than three decade, research has been focused on understanding the formation of electronic excited states subsequent to ion bombardment in order to establish the role of inelastic energy transfer on ionization and sputtering yield[2]. The widely accepted conclusion is that the rate of relaxation is determined by the energy gap between the excited and ground state, i.e., the larger the magnitude of the excitation energy the more rapid relaxation of the electronic excitation.

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Respaldiza, Miguel A., i Francisco J. Ager. "Ion beam analysis techniques in interdisciplinary applications". W Experimental nuclear physics in europe: Facing the next millennium. AIP, 1999. http://dx.doi.org/10.1063/1.1301836.

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Jankuhn, St, T. Butz, R. H. Flagmeyer, T. Reinert, J. Vogt, J. Hammerl, R. Protsch von Zieten i in. "Ion beam analysis of ancient human bone". W The fourteenth international conference on the application of accelerators in research and industry. AIP, 1997. http://dx.doi.org/10.1063/1.52700.

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Dran, Jean-Claude, i Thomas Calligaro. "Ion beam analysis in cultural heritage studies: Milestones and perspectives". W MULTIDISCIPLINARY APPLICATIONS OF NUCLEAR PHYSICS WITH ION BEAMS (ION BEAMS '12). AIP, 2013. http://dx.doi.org/10.1063/1.4812900.

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Field, K. G., C. J. Wetteland, G. Cao, B. R. Maier, C. Dickerson, T. J. Gerczak, C. R. Field, K. Kriewaldt, K. Sridharan i T. R. Allen. "University of Wisconsin Ion Beam Laboratory: A facility for irradiated materials and ion beam analysis". W APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: Twenty-Second International Conference. AIP, 2013. http://dx.doi.org/10.1063/1.4802311.

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Arens, W., i D. Ristau. "Online Monitoring of Ion Beam Sputter Processes by Plasma Analysis". W Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/oic.1998.mc.5.

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During the last decade, the rapid development and implementation of new concepts in precision laser metrology generated an increased demand for high quality optical component. A special requirement in this field is the production of coatings with lowest losses which is mainly achieved by adapted ion beam sputter processes in the present state of optical thin film technology. For the optimization of an existing ion beam sputter process, a new method of online process monitoring has been installed: In general, ion beam sputter processes are based on high energetic (about 1000eV) inert gas ions which sputter the desired coating material from a high purity target. For the deposition of oxide materials, the target can alternatively consist of the oxide or the corresponding metal, which is oxidized during the process in the residual oxygen atmosphere of the recipient. In the actual process, emission of plasma radiation in front of the metal target can be observed. This radiation is investigated by an online spectrometer for different process parameters in respect to the optical properties of the produced coatings. Silicon, aluminum and tantalum were chosen as target materials and sputtered under different operating conditions of the ion source and selected oxygen flow values. In the present setup, the plasma radiation at the target surface is collected and coupled into a fiber by a convex lens (fig.1). The optical fiber is conducting the light out of the high vacuum chamber into one of two existing monochromators covering the spectral region from 200nm up to 800nm. The power of the light spectrally resolved by the monochromator is measured by a photomultiplier tube, and the corresponding signal is recorded by a standard PC which is also employed for the wavelength control.

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Goeringer, D. E., i W. H. Christie. "Resonance Ionization Mass Spectrometry Using Ion-Beam Sampling". W Lasers in Material Diagnostics. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/lmd.1987.thc2.

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Sputter atomization/resonance ionization mass spectrometry (SA/RIMS) is a highly sensitive technique for materials analysis which combines ion beam sputtering, resonance ionization, and mass spectrometry. A pulsed beam of high-energy primary ions bombards the sample producing a plume of neutral atoms. The cloud of sputtered neutrals is intersected and ionized by a synchronized, pulsed laser beam tuned to a resonant transition for specific sample atoms. Laser-generated ions are then extracted into a mass spectrometer for mass analysis. Ion beam sputtering allows the sampling process to be highly controlled by varying the energy, current density, and composition of the primary beam; the pulsed nature of the beam results in efficient sample utilization. Use of a micro-focused beam permits imaging of small areas and particles. The pulsed dye laser generates the high optical power necessary to efficiently ionize the sputtered atoms. Mass analysis of the laser-generated ions provides the capability for isotope ratio measurements.

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Raporty organizacyjne na temat "Ion Beam Analysis"

Revesz, Peter, i Michael O. Thompson. Next Generation Ion Beam Analysis. Fort Belvoir, VA: Defense Technical Information Center, sierpień 1996. http://dx.doi.org/10.21236/ada316736.

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Kramer, Edward J. Ion Beam Analysis of Diffusion in Polymer Glasses. Fort Belvoir, VA: Defense Technical Information Center, sierpień 1989. http://dx.doi.org/10.21236/ada212339.

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Berning, Paul R., i Andrus Niiler. Particle Surface Layer Characterization Using Ion Beam Analysis. Fort Belvoir, VA: Defense Technical Information Center, sierpień 1996. http://dx.doi.org/10.21236/ada313848.

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Tegtmeier, Eric, Mary Hill, Daniel Rios i Juan Duque. Focused Ion Beam analysis of non radioactive samples. Office of Scientific and Technical Information (OSTI), luty 2021. http://dx.doi.org/10.2172/1766960.

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Kulp, William D., i III. Development of Ion Beam Analysis Techniques for Archeological Research. Fort Belvoir, VA: Defense Technical Information Center, maj 1991. http://dx.doi.org/10.21236/ada245647.

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D.G. Whyte. Dynamics of Plasma-Surface Interactions using In-situ Ion Beam Analysis. Office of Scientific and Technical Information (OSTI), lipiec 2009. http://dx.doi.org/10.2172/959136.

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Nastasi, M. Ion beam analysis and modification of thin-film, high-temperature superconductors. Office of Scientific and Technical Information (OSTI), październik 1989. http://dx.doi.org/10.2172/5658129.

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Rosenberg, Beth Ellen. Analysis of Heavy-Ion Beam Images and Comparison to RetardingPotential Analyzer Measurements. Office of Scientific and Technical Information (OSTI), sierpień 2005. http://dx.doi.org/10.2172/878114.

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Wang, Lanfa. Analysis and Simulation of Beam Ion Instability in ILC Damping Ring with Multi-gas Species. Office of Scientific and Technical Information (OSTI), październik 2012. http://dx.doi.org/10.2172/1053807.

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Wu, Qiong, B. Xiao, S. De Silva i Z. Li. Higher Order Multipole Analysis of Beam Crabbing Mode at 197 MHz for Electron-Ion Collider. Office of Scientific and Technical Information (OSTI), marzec 2024. http://dx.doi.org/10.2172/2331236.

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