Gotowa bibliografia na temat „Interfacial defect”
Utwórz poprawne odniesienie w stylach APA, MLA, Chicago, Harvard i wielu innych
Spis treści
Zobacz listy aktualnych artykułów, książek, rozpraw, streszczeń i innych źródeł naukowych na temat „Interfacial defect”.
Przycisk „Dodaj do bibliografii” jest dostępny obok każdej pracy w bibliografii. Użyj go – a my automatycznie utworzymy odniesienie bibliograficzne do wybranej pracy w stylu cytowania, którego potrzebujesz: APA, MLA, Harvard, Chicago, Vancouver itp.
Możesz również pobrać pełny tekst publikacji naukowej w formacie „.pdf” i przeczytać adnotację do pracy online, jeśli odpowiednie parametry są dostępne w metadanych.
Artykuły w czasopismach na temat "Interfacial defect"
Qin, Renyuan, Denvid Lau, Lik-ho Tam, Tiejun Liu, Dujian Zou i Ao Zhou. "Experimental Investigation on Interfacial Defect Criticality of FRP-Confined Concrete Columns". Sensors 19, nr 3 (24.01.2019): 468. http://dx.doi.org/10.3390/s19030468.
Pełny tekst źródłaLUCOVSKY, GERALD. "PART I: BOND STRAIN AND DEFECTS AT Si-SiO2 AND DIELECTRIC INTERFACES IN HIGH-k GATE STACKS". International Journal of High Speed Electronics and Systems 16, nr 01 (marzec 2006): 241–61. http://dx.doi.org/10.1142/s0129156406003631.
Pełny tekst źródłaWei, Jinfeng, Guangnan Xu, Guolin Liu, Jinwei Guo, Wang Zhu i Zengsheng Ma. "Quantitative Characterization of Interfacial Defects in Thermal Barrier Coatings by Long Pulse Thermography". Coatings 12, nr 12 (26.11.2022): 1829. http://dx.doi.org/10.3390/coatings12121829.
Pełny tekst źródłaZhang, Xin, i Shaoqing Wang. "Interfacial Strengthening of Graphene/Aluminum Composites through Point Defects: A First-Principles Study". Nanomaterials 11, nr 3 (15.03.2021): 738. http://dx.doi.org/10.3390/nano11030738.
Pełny tekst źródłaLiu, Feng, Yuan Zhu, Ruoyu Wu, Lidan Zhang, Rui Zou, Shengbing Zhou, Huiming Ning, Ning Hu i Cheng Yan. "Interfacial mechanical properties of periodic wrinkled graphene/polyethylene nanocomposite". Physica Scripta 98, nr 8 (31.07.2023): 085955. http://dx.doi.org/10.1088/1402-4896/ace93c.
Pełny tekst źródłaChen, Yuyun, Yi Shen, Yuanming Chen, Guodong Xu, Yudong Liu i Rui Huang. "Effects of Annealing Temperature on Bias Temperature Stress Stabilities of Bottom-Gate Coplanar In-Ga-Zn-O Thin-Film Transistors". Coatings 14, nr 5 (30.04.2024): 555. http://dx.doi.org/10.3390/coatings14050555.
Pełny tekst źródłaBondon, Arnaud, Khalid Lamnawar i Abderrahim Maazouz. "Influence of Copolymer Architecture on Generation of Defects in Reactive Multilayer Coextrusion". Key Engineering Materials 651-653 (lipiec 2015): 836–41. http://dx.doi.org/10.4028/www.scientific.net/kem.651-653.836.
Pełny tekst źródłaKim, Jin Mo, i Sung Won Hwang. "Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory". Molecules 26, nr 22 (9.11.2021): 6758. http://dx.doi.org/10.3390/molecules26226758.
Pełny tekst źródłaPond, R. C. "TEM studies of line defects in interfaces". Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 586–87. http://dx.doi.org/10.1017/s0424820100104996.
Pełny tekst źródłaZhou, Mingjian, Liqing Liu, Jiahao Liu i Zihang Mei. "Prediction and Control of Thermal Transport at Defective State Gr/h-BN Heterojunction Interfaces". Nanomaterials 13, nr 9 (25.04.2023): 1462. http://dx.doi.org/10.3390/nano13091462.
Pełny tekst źródłaRozprawy doktorskie na temat "Interfacial defect"
Augustine, Anusree. "Swelling induced debonding of thin hydrogel films grafted on silicon substrate : the role of interface physical-chemistry". Electronic Thesis or Diss., Université Paris sciences et lettres, 2022. http://www.theses.fr/2022UPSLS040.
Pełny tekst źródłaHydrogel coatings are transparent and hydrophilic polymer networks that absorb a lot of water and can be suitable candidates for anti-mist coatings. However, swelling-induced stresses within the film can result in detrimental debonding of hydrogel and may fail. In this study, these debonding processes are investigated in the relation to the grafting density at the film/substrate interface, so as to control and predict the failure of the coatings during swelling or under contact stresses. For that purpose, we have developed a methodology consisting in monitoring the initiation and the propagation of swelling-induced delamination from well-controlled preexisting interface defects.Surface-attached poly(dimethylacrylamide) (PDMA) hydrogel thin films are prepared on silicon wafers from the simultaneous Cross-Linking And Grafting (CLAG) of functionalized polymer chains by thiol-ene click chemistry. This strategy allows to tune the film thickness (0.1-2 µm) while ensuring a homogeneous crosslinking density. In order to vary the strength of the film/substrate interface, the silicon wafer is grafted by mixing reactive mercaptosilane and unreactive propylsilane in various proportions prior to the formation of the hydrogel film. We characterize the mercaptosilane surface fraction thus obtained by XPS and TOF-SIMS analyses. Well-controlled line defects (width between 2 and 100 µm) are also created to nucleate delamination of the hydrogel from the substrate.Swelling-induced debonding of the film is achieved under a constant vapor flow ensuring water saturation. Optical observations show the progressive debonding of the film from the pre-existing line defects under the action of localized swelling stresses. We obtain a delamination pattern of typical so-called telephone cord instability. We measure the debonding propagation velocity where the hydrogel is grafted to the substrate. The debonding rate is found to decrease over two orders of magnitude when the amount of mercaptosilane in the reactive silane mixture is increased from 10% to 100% while increasing the covalent bonds between hydrogel and substrate. A threshold thickness for debonding is also observed. This threshold thickness increases with the amount of mercaptosilane used to graft the substrate. We derived quantitative values of the interface fracture energy from the measured thickness threshold with a simple fracture mechanics model
Hariharan, Avinash [Verfasser], Gunther [Gutachter] Eggeler i Dierk [Gutachter] Raabe. "On the interfacial defect formation mechanism during laser additive manufactering of polycrystalline superalloys / Avinash Hariharan ; Gutachter: Gunther Eggeler, Dierk Raabe ; Fakultät für Maschinenbau". Bochum : Ruhr-Universität Bochum, 2020. http://d-nb.info/1204258333/34.
Pełny tekst źródłaPitthan, Filho Eduardo. "Investigação de defeitos e de métodos passivadores da região interfacial SiO2/SiC". reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2017. http://hdl.handle.net/10183/156795.
Pełny tekst źródłaSilicon carbide (SiC) is a semiconductor with adequate properties to substitute silicon in electronic devices in applications that require high power, high frequency, and/or high temperature. Besides, a silicon dioxide (SiO2) film can be thermally grown on SiC in a similar way to that on Si. However, these films present higher density of electrical defects in the SiO2/SiC interfacial region when compared to the SiO2/Si interface, which limits the quality of the fabricated devices. Thus, it is important to understand the origin of the electrical degradation and to develop methods to passivate the defects in the SiO2/SiC interfacial region in order to develop the SiC technology. Aiming at a better understanding of the nature of defects at the SiO2/SiC interfacial region, the interaction of SiO2/SiC structures with water vapor isotopically enriched (D2 18O) and the interaction with carbon monoxide (CO), one of the SiC thermal oxidation by-products, were investigated. It was observed that the interaction with CO generates positive charges in the structure and that the deuterium incorporation from the water vapor is strongly dependent on the formation route of the SiO2 film. Knowing that nitrogen and phosphorous incorporation in the SiO2/SiC interfacial region are efficient methods to reduce the number of electrical defects in this region, the nitrogen incorporation in SiC structures by isotopically enriched ammonia (15NH3) annealings was investigated and a new method to incorporate phosphorous, by sputtering deposition was developed The proposed incorporation methods resulted in higher amounts of nitrogen and phosphorous then those found in literature, making them promising candidates to the electrical passivation of SiC. Besides the physico-chemical characterization using different techniques, the electrical characterization of Metal-Oxide-Semiconductor (MOS) capacitors was also performed, testing SiO2 films obtained by sputtering deposition or thermally grown. Additionally, a route to synthesize 18O standards for nuclear reaction analyses that are more stable over time was developed. Besides, a methodology to quantify phosphorous by nuclear reaction analysis was proposed. From the results obtained in this PhD thesis, a better understanding of the nature and the origin of defects present in the SiO2/SiC interfacial region was obtained, as well as a better understanding on how the passivating elements nitrogen and phosphorous interact in this region.
Guttman, Jeremy. "Polymer-based Tunnel Diodes Fabricated using Ultra-thin, ALD Deposited, Interfacial Films". The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1469125487.
Pełny tekst źródłaMcAuley, Nigel Anthony. "A study of interfacial defects in hexagonal based bicrystals". Thesis, University of Liverpool, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.235507.
Pełny tekst źródłaKamal, Alm Hajer. "Interfacial Adhesion Failure : Impact on print-coating surface defects". Doctoral thesis, KTH, Fiber- och polymerteknologi, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-194166.
Pełny tekst źródłaQC 20161019
Casey, Siobhan. "A study of interfacial defects in semiconductor materials and metals". Thesis, University of Liverpool, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240588.
Pełny tekst źródłaBesson, Rémy. "Simulation à l'échelle atomique de quelques propriétés volumiques et interfaciales d'alliages ordonnés fer-aluminium". Grenoble INPG, 1997. http://www.theses.fr/1997INPG4201.
Pełny tekst źródłaAdamczyk, Leslie Ann. "Understanding the Structure and Properties of Self-Assembled Monolayers for Interfacial Patterning". Diss., Virginia Tech, 2009. http://hdl.handle.net/10919/28018.
Pełny tekst źródłaPh. D.
Chen, Jhewn-Kuang. "The role of defects during precipitate growth in a Ni-45wt% Cr alloy". Diss., This resource online, 1995. http://scholar.lib.vt.edu/theses/available/etd-06062008-162241/.
Pełny tekst źródłaCzęści książek na temat "Interfacial defect"
Dybkov, V. I. "Interfacial Interaction and Diffusion in Binary Systems". W Defect and Diffusion Forum, 75–80. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-35-3.75.
Pełny tekst źródłaMuktepavela, Faina, Georgy Bakradze i Sara Stolyarova. "Effect of Mechanoactivation on Interfacial Interaction in Metal/Oxide Systems". W Defect and Diffusion Forum, 263–68. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908451-17-5.263.
Pełny tekst źródłaKarakostas, Th, G. P. Dimitrakopulos, J. G. Antonopoulos i R. C. Pond. "Interfacial and Junction Line Defect Analysis for Plasticity Investigations". W Multiscale Phenomena in Plasticity: From Experiments to Phenomenology, Modelling and Materials Engineering, 205–14. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-011-4048-5_16.
Pełny tekst źródłaPiccolroaz, A., G. Mishuris i A. B. Movchan. "Perturbation of mode III interfacial cracks". W Recent Progress in the Mechanics of Defects, 41–51. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-94-007-0314-8_6.
Pełny tekst źródłaFathy, D., i M. Sayah. "Defects and Interfacial Structure in Ge/Si Layers". W Microscopy of Oxidation, 299–304. London: CRC Press, 2023. http://dx.doi.org/10.1201/9781003422020-41.
Pełny tekst źródłaLavrentovich, O. D. "Defects in Liquid Crystals: Surface and Interfacial Anchoring Effects". W Patterns of Symmetry Breaking, 161–95. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-007-1029-0_6.
Pełny tekst źródłaBarrett, Christopher, i Haitham El Kadiri. "The Deformation Gradient of Interfacial Defects on Twin-like Interfaces". W Magnesium Technology 2015, 121–25. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2015. http://dx.doi.org/10.1002/9781119093428.ch24.
Pełny tekst źródłaBarrett, Christopher, i Haitham El Kadiri. "The Deformation Gradient of Interfacial Defects on Twin-like Interfaces". W Magnesium Technology 2015, 121–25. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-48185-2_24.
Pełny tekst źródłaPond, R. C. "The Geometrical Character of Extended Interfacial Defects in Semiconducting Materials". W Springer Series in Solid-State Sciences, 27–45. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-82441-8_3.
Pełny tekst źródłaUren, M. J., i D. H. Cobden. "Generation of Random Telegraph Noise by Single Si/SiO2 Interfacial Defects". W The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2, 373–82. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-1588-7_41.
Pełny tekst źródłaStreszczenia konferencji na temat "Interfacial defect"
Hetzer, M. J., L. J. Brillson i D. G. Jensen. "Interfacial alloying and defect formation inside operational cigs solar cells". W 2009 34th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2009. http://dx.doi.org/10.1109/pvsc.2009.5411453.
Pełny tekst źródłaKacha, K., F. Djeffal, T. Bentrcia i M. Meguellati. "Equivalent circuit modeling of SiGe/Si solar cell including interfacial defect effects". W 14th International Conference on Sciences and Techniques of Automatic Control and Computer Engineering (STA2013). IEEE, 2013. http://dx.doi.org/10.1109/sta.2013.6783124.
Pełny tekst źródłaSrisonphan, Siwapon. "Interfacial oxide defect mediated ballistic electron transport for ITO/p-Si contact". W 2014 11th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON). IEEE, 2014. http://dx.doi.org/10.1109/ecticon.2014.6839734.
Pełny tekst źródłaHarris, J. T., A. E. Segall, D. Robinson i R. Carter. "Defect Evolution on Coated Samples Under Severe Thermal Transients and Interfacial Characterization". W ASME 2012 Pressure Vessels and Piping Conference. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/pvp2012-78358.
Pełny tekst źródłaSheng, Chi, Dawei Gong, Xin Wei, Fang Lu, Qinhua Wang, Henghui Sun i Xun Wang. "Suppression of Interfacial Boron Accumulation and Defect Density in Molecular Beam Epitaxial Silicon". W 1993 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1993. http://dx.doi.org/10.7567/ssdm.1993.pb-1-2.
Pełny tekst źródłaJunqueira, Bernardo, DANIEL CASTELLO i Ricardo Leiderman. "A Deep learning approach for interfacial defect identification based on reduced acoustic scattering models". W XIX International Symposium on Dynamic Problems of Mechanics. ABCM, 2023. http://dx.doi.org/10.26678/abcm.diname2023.din2023-0043.
Pełny tekst źródłaAhmed, Waleed K. "SIF Prediction of Nanocomposite With Interfacial Debonding". W ASME 2014 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/imece2014-36399.
Pełny tekst źródłaYamashita, Daiji, Kentaroh Watanabe, Masahisa Fujino, Takuya Hoshii, Yoshitaka Okada, Yoshiaki Nakano, Tadatomo Suga i Masakazu Sugiyama. "Admittance spectroscopy analysis on the interfacial defect levels in the surface-activated bonding of GaAs". W 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). IEEE, 2016. http://dx.doi.org/10.1109/pvsc.2016.7750051.
Pełny tekst źródłaGualdrón-Reyes, Andres F., Camilo A. Mesa, Sixto Giménez i Iván Mora Seró. "Defect- and interfacial-engineering strategies to synthesize CsPbX3 perovskite nanocrystals for efficient photo(electro)catalysis". W International Conference on Hybrid and Organic Photovoltaics. València: Fundació Scito, 2022. http://dx.doi.org/10.29363/nanoge.hopv.2022.094.
Pełny tekst źródłaHuang, Zhen, Zheng Wang, Huijie Li, Fanghui Yin, Liming Wang i Xiangyang Peng. "Interfacial Defect Detection of Three-Layer Structure in Composite Cross-Arms Using Active Infrared Thermography". W 2023 IEEE 7th Conference on Energy Internet and Energy System Integration (EI2). IEEE, 2023. http://dx.doi.org/10.1109/ei259745.2023.10513190.
Pełny tekst źródłaRaporty organizacyjne na temat "Interfacial defect"
Lee, Wall i Burch. L52333 NDE and Inspection Techniques Applied to Composite Wrap Repairs. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), czerwiec 2012. http://dx.doi.org/10.55274/r0010468.
Pełny tekst źródłaSrolovitz, David J. Interfacial defects morphology and kinetics. Final report. Office of Scientific and Technical Information (OSTI), listopad 2001. http://dx.doi.org/10.2172/771276.
Pełny tekst źródłaLee, Richard. PR-398-133719-R02 Inspection of Composite Repairs for Pipelines and Piping - Phase 3 Further NDE Trials. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), kwiecień 2020. http://dx.doi.org/10.55274/r0011662.
Pełny tekst źródłaLee, Mal Soon, Jinhui Tao, Katherine Koh i Kee Sung Han. The role of defects and solid/liquid interfacial interactions on controlling anisotropic growth of novel two-dimensional materials. Office of Scientific and Technical Information (OSTI), wrzesień 2021. http://dx.doi.org/10.2172/1983664.
Pełny tekst źródła