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Artykuły w czasopismach na temat "Injecteur de spin"
Chen, Zhigao, Baigeng Wang, D. Y. Xing i Jian Wang. "A spin injector". Applied Physics Letters 85, nr 13 (27.09.2004): 2553–55. http://dx.doi.org/10.1063/1.1793335.
Pełny tekst źródłaChi, Feng, Xiao-Ning Dai i Lian-Liang Sun. "A quantum dot spin injector with spin bias". Applied Physics Letters 96, nr 8 (22.02.2010): 082102. http://dx.doi.org/10.1063/1.3327807.
Pełny tekst źródłaEgelhoff Jr., W. F. "Spin Polarization of Injected Electrons". Science 296, nr 5571 (17.05.2002): 1195a—1195. http://dx.doi.org/10.1126/science.296.5571.1195a.
Pełny tekst źródłaMi, Yilin, Ming Zhang, Hongrui Guo i Hui Yan. "Spin transport in a spin-injected organic semiconductor system". Current Applied Physics 10, nr 6 (listopad 2010): 1448–51. http://dx.doi.org/10.1016/j.cap.2010.05.011.
Pełny tekst źródłaGiazotto, F., i F. S. Bergeret. "Quantum interference hybrid spin-current injector". Applied Physics Letters 102, nr 16 (22.04.2013): 162406. http://dx.doi.org/10.1063/1.4802953.
Pełny tekst źródłaBhat, R. D. R., i J. E. Sipe. "Optically Injected Spin Currents in Semiconductors". Physical Review Letters 85, nr 25 (18.12.2000): 5432–35. http://dx.doi.org/10.1103/physrevlett.85.5432.
Pełny tekst źródłaWANG, Y., A. P. LIU, J. BAO, X. G. XU i Y. JIANG. "SPIN INJECTION INTO TWO-DIMENSIONAL ELECTRON GAS THROUGH A SPIN-FILTERING INJECTOR". Modern Physics Letters B 22, nr 16 (30.06.2008): 1535–45. http://dx.doi.org/10.1142/s0217984908016273.
Pełny tekst źródłaBattiato, M. "Spin polarisation of ultrashort spin current pulses injected in semiconductors". Journal of Physics: Condensed Matter 29, nr 17 (27.03.2017): 174001. http://dx.doi.org/10.1088/1361-648x/aa62de.
Pełny tekst źródłaZholud, A., i S. Urazhdin. "Microwave generation by spin Hall nanooscillators with nanopatterned spin injector". Applied Physics Letters 105, nr 11 (15.09.2014): 112404. http://dx.doi.org/10.1063/1.4896023.
Pełny tekst źródłaZozoulenko, I. V., i M. Evaldsson. "Quantum antidot as a controllable spin injector and spin filter". Applied Physics Letters 85, nr 15 (11.10.2004): 3136–38. http://dx.doi.org/10.1063/1.1804249.
Pełny tekst źródłaRozprawy doktorskie na temat "Injecteur de spin"
Gao, Xue. "Injection de spin dans les semiconducteurs et les matériaux organiques". Thesis, Université de Lorraine, 2019. http://www.theses.fr/2019LORR0059/document.
Pełny tekst źródłaSpintronics with semiconductors is very attractive as it can combine the potential of semiconductors with the potential of the magnetic materials. GaN has a long spin relaxation time, which could be of potential interest for spintronics applications. Organic spintronics is also very appealing because of the long spin lifetime of charge carriers in addition to their relatively low cost, flexibility, and chemical diversity. In this thesis, we investigate spin injection in spin LEDs containing either InAs/GaAs quantum dots or InGaN/GaN quantum wells. Moreover, we further study spin polarized transport in organic multiferroic tunnel junctions (OMFTJs). Firstly, we will show that the circular polarization of the light emitted by a LED containing a single layer of p-doped InAs/GaAs quantum dots (QDs) can reach about 18% under zero applied magnetic field. A clear correlation is established between the polarization degree of the emitted light and the perpendicular magnetization of the injector layer. The polarization reaches a maximum for an applied bias of 2.5V at 10K, which corresponds to an injected current of 6 µA. Also, we report a remarkable behavior of the polarization in the temperature region 60-80K. The interpretation of the bias and temperature dependence of the polarization is discussed in light of the competition between radiative recombination time τr and the spin relaxation time τs. In addition, significant efforts have been devoted to developing a perpendicular spin injector on GaN based materials to achieve spin injection without applying a magnetic field. Firstly, the growth of MgO has been investigated at various growth temperatures. Then, we studied the growth of either Fe or Co on MgO/GaN. In contrast to Fe/MgO, the Co/MgO spin injector yields a clear perpendicular magnetic anisotropy. In addition, ab-initio calculations have been performed to understand the origin of the perpendicular magnetic anisotropy at the Co/MgO(111) interface. Finally, we investigate multiferroic tunnel junctions (MFTJs) based on organic PVDF barriers doped with Fe3O4 nano particles. The organic MFTJs have recently attracted much attention since they can combine advantages of spintronics, organic and ferroelectric electronics. We report on the successful fabrication of La0.6Sr0.4MnO3/PVDF:Fe3O4/Co OMFTJ, where the poly(vinylidene fluoride) (PVDF) organic barrier has been doped with ferromagnetic Fe3O4 nanoparticles. By changing the polarization of the ferroelectric PVDF, the tunneling process in OMFTJ can be switched either through the LSMO/PVDF/Co part (positive polarization) or through the Fe3O4/PVDF/Co part (negative polarization). This corresponds to a reversal of tunneling magnetoresistance (TMR) from +10% to -50%, respectively. Our study shows that the doping of OMFTJs with magnetic nanoparticles can create new functionalities of organic spintronic devices by the interplay of nanoparticle magnetism with the ferroelectricity of the organic barrier
Gao, Xue. "Injection de spin dans les semiconducteurs et les matériaux organiques". Electronic Thesis or Diss., Université de Lorraine, 2019. http://www.theses.fr/2019LORR0059.
Pełny tekst źródłaSpintronics with semiconductors is very attractive as it can combine the potential of semiconductors with the potential of the magnetic materials. GaN has a long spin relaxation time, which could be of potential interest for spintronics applications. Organic spintronics is also very appealing because of the long spin lifetime of charge carriers in addition to their relatively low cost, flexibility, and chemical diversity. In this thesis, we investigate spin injection in spin LEDs containing either InAs/GaAs quantum dots or InGaN/GaN quantum wells. Moreover, we further study spin polarized transport in organic multiferroic tunnel junctions (OMFTJs). Firstly, we will show that the circular polarization of the light emitted by a LED containing a single layer of p-doped InAs/GaAs quantum dots (QDs) can reach about 18% under zero applied magnetic field. A clear correlation is established between the polarization degree of the emitted light and the perpendicular magnetization of the injector layer. The polarization reaches a maximum for an applied bias of 2.5V at 10K, which corresponds to an injected current of 6 µA. Also, we report a remarkable behavior of the polarization in the temperature region 60-80K. The interpretation of the bias and temperature dependence of the polarization is discussed in light of the competition between radiative recombination time τr and the spin relaxation time τs. In addition, significant efforts have been devoted to developing a perpendicular spin injector on GaN based materials to achieve spin injection without applying a magnetic field. Firstly, the growth of MgO has been investigated at various growth temperatures. Then, we studied the growth of either Fe or Co on MgO/GaN. In contrast to Fe/MgO, the Co/MgO spin injector yields a clear perpendicular magnetic anisotropy. In addition, ab-initio calculations have been performed to understand the origin of the perpendicular magnetic anisotropy at the Co/MgO(111) interface. Finally, we investigate multiferroic tunnel junctions (MFTJs) based on organic PVDF barriers doped with Fe3O4 nano particles. The organic MFTJs have recently attracted much attention since they can combine advantages of spintronics, organic and ferroelectric electronics. We report on the successful fabrication of La0.6Sr0.4MnO3/PVDF:Fe3O4/Co OMFTJ, where the poly(vinylidene fluoride) (PVDF) organic barrier has been doped with ferromagnetic Fe3O4 nanoparticles. By changing the polarization of the ferroelectric PVDF, the tunneling process in OMFTJ can be switched either through the LSMO/PVDF/Co part (positive polarization) or through the Fe3O4/PVDF/Co part (negative polarization). This corresponds to a reversal of tunneling magnetoresistance (TMR) from +10% to -50%, respectively. Our study shows that the doping of OMFTJs with magnetic nanoparticles can create new functionalities of organic spintronic devices by the interplay of nanoparticle magnetism with the ferroelectricity of the organic barrier
Zhou, Ziqi. "Optical and Electrical Properties of Two-Dimensional Materials". Electronic Thesis or Diss., Université de Lorraine, 2021. http://www.theses.fr/2021LORR0141.
Pełny tekst źródłaTwo-dimensional (2D) semiconductor materials exhibit overwhelming electrical, optical, magnetic, thermal and other advantages, which enables their great potential applications in ultra-thin, transparent and highly integrated optoelectronic devices. Searching new two-dimensional materials and exploring their optimal performance, as well as expanding the practical application of two-dimensional materials have been the cores of the researches of two-dimensional materials. This thesis focuses on the vertical magnetic control of the CoFeB film on a large-area single-layer MoS₂ film, which could expand the potential of two-dimensional materials in spin optical detectors, the Polarized Photodetection (anisotropy) based on noval two-dimensional semiconductor GeAs, and the optical characterizations of group IV-VI compounds like SnS and ZnSnS alloys. This paper introduces them in detail through the following three parts: 1. We research the fabrication of the Ta/CoFeB/MgO structures with large perpendicular magnetic anisotropies (PMA) on the full coverage MoS₂ monolayers. By optimizing the thickness of the CoFeB layer and the annealing temperature, a large perpendicular interface anisotropy energy of 0.975 mJ/m² has been obtained at the CoFeB/MgO interface. By analyzing the structural and the chemical properties of the heterostructure, it is found that the insertion of MgO between the ferromagnetic metal (FM) and the 2D material can effectively block the diffusion of the FM atoms into the 2D material, and that the Ta layer plays a critical role to efficiently absorb B atoms from the CoFeB layer to establish the PMA. From the results of ab initio calculations, the MgO thickness can be tuned to modify the MoS₂ band structure, from an indirect bandgap with 7 MLs MgO layers to a direct bandgap with 3 MLs MgO layers. The proximity effect induced by Fe results in a splitting of 10 meV in the valence band at the Γ point of the 3MLs MgO structure while it is negligible for the 7MLs MgO structure. 2. we research the anisotropic optical characterization of a group IV-V compound, Germanium Arsenic (GeAs), with anisotropic monoclinic structure. The in-plane anisotropic optical nature of GeAs crystal is further investigated by the polarization-resolved absorption spectroscopy (400-2000 nm) and the polarization-sensitive photodetectors. In the visible-to-near-infrared range, the 2D GeAs nanoflakes demonstrate the distinct perpendicular optical reversal with an angle of 75~80 degrees on both of the linear dichroism and the polarization-sensitive photodetection. Obvious anisotropic features and the high dichroic ratio of Ipmax/Ipmin ~ 1.49 at 520 nm and Ipmax/Ipmin ~ 4.4 at 830 nm are measured by the polarization-sensitive photodetection. The polarization-dependent photocurrent mapping implied that the polarized photocurrent mainly occurred at the Schottky photodiodes at the electrode/GeAs interface. 3. We research optical characterizations of group-IV-VI compounds like SnS and ZnSnS alloys. SnS nanosheets exhibit carrier mobility of 37.75 cm²·V⁻¹·s⁻¹, photoresponsivity of 310.5 A/W and external quantum efficiency of 8.56×104% at 450 nm. Optical absorption around the absorption edge presents obvious polarization sensitivity with the highest optical absorption dichroic ratio of 3.06 at 862 nm. Due to the anisotropic optical absorption, the polarized photocurrent appears upon the periodic change affected by the polarized direction of the incident light at 808 nm. The ZnSnS alloys combine the advantageous optical parameters of SnS and ZnS₂, which belong to the direct band structure of n-type 2D semiconductors. The carrier mobility of the alloy is 65 cm² V⁻¹ S⁻¹ and the on/off ratio under white-LED illumination is as high as 51
Lin, Weiwei, Kai Chen, Shufeng Zhang i C. L. Chien. "Enhancement of Thermally Injected Spin Current through an Antiferromagnetic Insulator". AMER PHYSICAL SOC, 2016. http://hdl.handle.net/10150/614754.
Pełny tekst źródłaAlharthi, Sami S. "Nonlinear dynamics of solitary and optically-injected spin vertical-cavity lasers". Thesis, University of Essex, 2016. http://repository.essex.ac.uk/16632/.
Pełny tekst źródłaHu, Kaige. "Optically-injected spin current and its scattering effect in semiconductor quantum wells". Click to view the E-thesis via HKUTO, 2007. http://sunzi.lib.hku.hk/HKUTO/record/B39557571.
Pełny tekst źródłaHu, Kaige, i 胡凱歌. "Optically-injected spin current and its scattering effect in semiconductor quantum wells". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2007. http://hub.hku.hk/bib/B39557571.
Pełny tekst źródłaVan, Veenhuizen Marc Julien. "Investigation of the tunneling emitter bipolar transistor as spin-injector into silicon". Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/63011.
Pełny tekst źródłaCataloged from PDF version of thesis.
Includes bibliographical references (p. 185-196).
In this thesis is discussed the tunneling emitter bipolar transistor as a possible spin-injector into silicon. The transistor has a metallic emitter which as a spin-injector will be a ferromagnet. Spin-polarized electrons from the ferromagnet tunnel directly into the conduction band of the base of the transistor and are subsequently swept into the collector. The tunneling emitter bipolar transistor as a spin-injector allows for large spin-polarized currents and naturally overcomes the conductivity mismatch and Schottky barrier formation. In this work, the various aspects of the transistor are analyzed. The transfer of spin-polarization across the base-collector junction is simulated. The oxide MgO is considered as a tunnel barrier for the transistor. Electron spin resonance is proposed as a measurement technique to probe the spin-polarization injected into the collector. The fabrication of the transistors is discussed and the importance of the tunnel barrier for the device operation is fully analyzed. The observation of negative differential transconductance in the transistor is explained. A number of side- or unrelated studies are presented as well. A study on scattered and secondary electrons in e-beam evaporation is described. Spin-orbit coupling induced spin-interference of ring-structures is proposed as a spin-detector. A new measurement technique to probe bias dependent magnetic noise in magnetic tunnel junctions is proposed. Also, an IV fitting program that can extract the relative importance of the tunnel and Schottky barrier is discussed and employed to fit the base-emitter IV characteristics of the transistor. The development of several fabrication and experimental tools is described as well.
by Marc Julien van Veenhuizen.
Ph.D.
Stanley, Daniel C. "MAGNETIC DAMPING IN FE3O4 THROUGH THE VERWEY TRANSITION FOR VARIABLE AG THICKNESSES". Miami University / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=miami1376500586.
Pełny tekst źródłaDuluard, Christophe. "Contribution à la réalisation d'une mémoire magnétique Intégrée sur silicium". Phd thesis, Grenoble 1, 2007. http://www.theses.fr/2007GRE10036.
Pełny tekst źródłaThis work is focused on the study of the injection and the collection of spin-polarized electrons into silicon. Different studies were conducted whose principal results will be presented. In all these studies, a simple diode-like ferromagnetic metal/insulator/semiconductor (FM/I/S) structure is used. The first study aimed to investigate whether a magnetic “dead” layer is obtained at the ferromagnet/oxide barrier that could lead to spin depolarization of the injected electrons. In the second study, magnetic characterization of diodes that may be used for spin injection and collection were performed. The third study focused on the contamination of the insulator barrier and the silicon by the ferromagnetic metal. The results underline the importance of controlling the contamination in obtaining defect-free insulator barrier, a prerequisite to spin conservative direct tunnel transport process. In the last study, capacitance-voltage as well as current-voltage characteristics have been measured. The electrical results show that the mechanisms of transport through the insulator barrier are assisted by defects whose the origin is probably linked to the diffusion of the 3d metal through the insulator barrier. Finally, a silicon-based device was made and studied to attempt to detect a magnetoresistance signal
Książki na temat "Injecteur de spin"
Suzuki, Y. Spin torque in uniform magnetization. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198787075.003.0020.
Pełny tekst źródłaKimura, T., i Y. Otani. Magnetization switching due to nonlocal spin injection. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198787075.003.0021.
Pełny tekst źródłaGlazov, M. M. Electron Spin Precession Mode Locking and Nuclei-Induced Frequency Focusing. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198807308.003.0009.
Pełny tekst źródłaCzęści książek na temat "Injecteur de spin"
Borukhovich, Arnold S., i Alexey V. Troshin. "Creating a High-Temperature Spin Injector and a Spin-Wave Transistor Based on EuO". W Europium Monoxide, 163–85. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-76741-3_7.
Pełny tekst źródłaJones, Richard A. L. "The Brownian universe: physics at the nanoscale". W Soft Machines, 54–87. Oxford University PressOxford, 2004. http://dx.doi.org/10.1093/oso/9780198528555.003.0004.
Pełny tekst źródłaMunson, Ronald. "Like Leaving a Note". W The Woman Who Decided To Die, 11–29. Oxford University PressNew York, NY, 2009. http://dx.doi.org/10.1093/oso/9780195331011.003.0002.
Pełny tekst źródłaKenneth Chima, Orgu, Chukwu Andy Onyema, Onubuogu Gilbert Chinedu i Esiobu Nnaemeka Success. "Does Rural Livestock Farmers’ Have Knowledge of Organic Livestock Farming Practices? Lesson from Southeast, Nigeria". W Agricultural Economics [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.99961.
Pełny tekst źródłaStreszczenia konferencji na temat "Injecteur de spin"
Lu, Y., S. Liang, T. Zhang, P. Barate, J. Frougier, P. Renucci, B. Xu i in. "Spin light emitting diode with CoFeB/MgO spin injector". W 2015 IEEE International Magnetics Conference (INTERMAG). IEEE, 2015. http://dx.doi.org/10.1109/intmag.2015.7157058.
Pełny tekst źródłaZozoulenko, I. V. "Quantum antidot as a controllable spin injector and spin filter". W PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994635.
Pełny tekst źródłaSipe, John, R. d. R. Bhat, Ali Najmaie, F. Nastos, Y. Kerachian, H. M. van Driel, Arthur L. Smirl, Martin J. Stevens i X. Y. Pan. "Optically injected spin currents in semiconductors". W International Quantum Electronics Conference. Washington, D.C.: OSA, 2004. http://dx.doi.org/10.1364/iqec.2004.ithk4.
Pełny tekst źródłaJohnson, M., H. C. Koo, J. Eom, S. H. Han i J. Chang. "Electric field control of spin precession in a spin-injected Field Effect Transistor". W 2010 68th Annual Device Research Conference (DRC). IEEE, 2010. http://dx.doi.org/10.1109/drc.2010.5551952.
Pełny tekst źródłaShore, K. A. "Performance optimization of electrically-injected nano-spin VCSELs". W 12th European Quantum Electronics Conference CLEO EUROPE/EQEC. IEEE, 2011. http://dx.doi.org/10.1109/cleoe.2011.5942627.
Pełny tekst źródłaShore, K. A. "Electrically-injected nano-spin VCSELs: Design and applications". W 2011 International Quantum Electronics Conference (IQEC) and Conference on Lasers and Electro-Optics (CLEO) Pacific Rim. IEEE, 2011. http://dx.doi.org/10.1109/iqec-cleo.2011.6193597.
Pełny tekst źródłaJoly, Alexandre, Julien Frougier, Ghaya Baili, Mehdi Alouini, Jean-Marie George, Isabelle Sagnes i Daniel Dolfi. "Theoretical and experimental investigation of optically spin-injected VECSEL". W SPIE OPTO, redaktor Manijeh Razeghi. SPIE, 2016. http://dx.doi.org/10.1117/12.2218148.
Pełny tekst źródłaAvrutin, V., Ü. Özgür, J. Xie, Y. Fu, F. Yun, H. Morkoç i V. I. Litvinov. "Gd-implanted GaN as a candidate for spin injector". W Integrated Optoelectronic Devices 2006, redaktorzy Cole W. Litton, James G. Grote, Hadis Morkoc i Anupam Madhukar. SPIE, 2006. http://dx.doi.org/10.1117/12.646951.
Pełny tekst źródłaShore, K. A. "Electrically-injected nano-spin VCSELs : design principles and applications". W Frontiers in Optics. Washington, D.C.: OSA, 2011. http://dx.doi.org/10.1364/fio.2011.fww5.
Pełny tekst źródłaHubner, J., W. W. Ruhle, M. Klude, D. Hommel, R. D. R. Bhat, J. E. Sipe i H. M. van Driel. "Direct observation of optically injected spin-polarized currents in semiconductors". W Quantum Electronics and Laser Science (QELS). Postconference Digest. IEEE, 2003. http://dx.doi.org/10.1109/qels.2003.238397.
Pełny tekst źródłaRaporty organizacyjne na temat "Injecteur de spin"
Ranjbar, Vahid H., M. Blaskiewicz, F. Meot, C. Montag i S. Tepikian. Spin Resonance Free Electron Ring Injector. Office of Scientific and Technical Information (OSTI), styczeń 2017. http://dx.doi.org/10.2172/1436273.
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