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Gotowe bibliografie tematyczne / InGaAs Linear Detector Arrays

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Gotowa bibliografia na temat „InGaAs Linear Detector Arrays”

Autor: Grafiati

Data publikacji: 6 września 2023

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Artykuły w czasopismach na temat "InGaAs Linear Detector Arrays"

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Deng, Honghai, Zhiliang Wang, Haibao Shao, Yi Li, Xue Li i Haimei Gong. "Performance of Dual-Band Short-Wave Infrared InGaAs Focal-Plane Arrays with Interference Narrow-Band Filter". Electronics 8, nr 12 (13.12.2019): 1537. http://dx.doi.org/10.3390/electronics8121537.

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In this work, we fabricated dual-band 800 × 2 short-wave infrared (SWIR) indium gallium arsenide (InGaAs) focal-plane arrays (FPAs) using N-InP/i-In0.53Ga0.47As/N-InP double-heterostructure materials, which are often applied in ocean-color remote sensing. Using narrow-band interference-filter integration, our detector-adopted planner structure produced two detection channels with center wavelengths of 1.24 and 1.64 μm, and a full-width half-maximum (FWHM) of 0.02 μm for both channels. The photoelectric characteristics of the spectral response, modulation transfer function (MTF), and detectability of the detector were further analyzed. Our FPAs showed good MTF uniformity with pixel operability as high as 100% for each 800 × 1 linear array. Peak detectivity reached 4.39 × 1012 and 5.82 × 1012 cm·Hz1/2/W at 278 K, respectively, and response nonuniformity was ideal at 2.48% and 2.61%, respectively. As a final step, dual-band infrared detection imaging was successfully carried out in push-broom mode.

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ZHU, Yao-Ming, Yong-Fu LI, Xue LI, Heng-Jing TANG, Xiu-Mei SHAO, Yu CHEN, Hong-Hai DENG, Peng WEI, Yong-Gang ZHANG i Hai-Mei GONG. "Extended-wavelength 640×1 linear InGaAs detector arrays using N-on-P configuration for back illumination". JOURNAL OF INFRARED AND MILLIMETER WAVES 31, nr 1 (23.03.2012): 11–14. http://dx.doi.org/10.3724/sp.j.1010.2012.00011.

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Kumar, Saurabh, Bharadwaj Amrutur i Sundarrajan Asokan. "Evaluation of fiber Bragg grating sensor interrogation using InGaAs linear detector arrays and Gaussian approximation on embedded hardware". Review of Scientific Instruments 89, nr 2 (luty 2018): 025102. http://dx.doi.org/10.1063/1.5022548.

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Zhang Xiaoyu, 张笑宇, 王凤香 Wang Fengxiang, 郭颖 Guo Ying, 王文娟 Wang Wenjuan, 罗永锋 Luo Yongfeng, 武文 Wu Wen, 侯佳 Hou Jia i in. "基于InGaAs单光子探测器的线阵扫描激光雷达及其光子信号处理技术研究". Infrared and Laser Engineering 52, nr 3 (2023): 20220474. http://dx.doi.org/10.3788/irla20220474.

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Oehme, Michael, Zili Yu, Maurice Wanitzek, Steffen Epple, Lena Schad, Michael Hack, Joachim Burghartz, Daniel Schwarz i Mathias Kaschel. "Monolithic Integration of Gesn on Si for IR Camera Demonstration". ECS Meeting Abstracts MA2022-02, nr 32 (9.10.2022): 1169. http://dx.doi.org/10.1149/ma2022-02321169mtgabs.

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Due to the development of cost-efficient detector technologies in the NIR (Near Infrared), new areas of application are constantly being addressed. This affects autonomous driving, where LiDAR (Light Detection and Ranging) systems with better eye safety are being developed, as well as low-cost night vision cameras. Another area of application is NIR spectroscopy, e.g. in the areas of food monitoring, environmental research or medical technology. The increasing need for portable, low-cost analysis devices, for example for "on-site" measurements or for everyday life, is driving the development of highly miniaturized and low-cost lab-on-a-chip systems. The NIR detectors and NIR cameras available on the market are primarily based on materials from group III/V compound semiconductors, e.g. InGaAs. However, the CMOS (Complementary Metal Oxide Semiconductor) standard process cannot be used for the production of this technology, which significantly increases the cost factor and thus limits its use on the market. A promising alternative is offered by group IV based detectors, in particular Ge and GeSn detectors, which can be monolithically integrated on a Si substrate. As a result, such detector systems can be processed much more cost-efficiently with CMOS compatible standard technology. The NIR absorption properties are also comparable to III/V components. This paper reports on the monolithic integration of Ge and GeSn detector arrays on Si substrates for the realization of a camera system. The entire system consists of a photonic chip, a readout chip and a standard microcontroller, which is connected to a laptop via USB. The SNR (signal-to-noise ratio) is an important parameter for such an integrated system. The quantum efficiency of each individual pixel sensor has to be maximized and a high fill factor per pixel is aimed for. A particularly high fill factor is achieved here with optical light coupling via the substrate back-side, since the front-side metallization does not interfere with the optical coupling area. Furthermore, the metallization acts then as a mirror, the light thus passes through the absorption area twice and leads to a higher quantum efficiency. However, the main obstacle of Ge and GeSn, compared to III/V devices, is the higher intrinsic charge carrier concentration, which leads to a significantly higher dark current. A possible solution is the zero bias operation of the detector at the expected dark current minimum. The dark current is 3 orders of magnitude smaller at 0 V compared to an operating point at -1 V. Another criterion for the circuit is that a signal range or photocurrent supports a wide dynamic range (between nA and µA). For this purpose, the photocurrent is fed into the evaluation electronics via a triple cascaded current mirror. The measured value is output to a 12-bit ADC (Analog Digital Converter) integrated in the microcontroller via a current/voltage converter, two buffers and a sample hold element. With the help of additional multiplexers, the circuit can be used to read out several detectors and thus address a pixel matrix. We report on the fabrication of the photonic chip, which is carried out using CMOS compatible processes and MEMS (Micro-Electro-Mechanical System) processes in combination with an epitaxial growth of the active device structures. The photonic chip is based on 150 mm Si substrates, which were prepared first with multiple ion implantation steps. The active pin detector layers, consisting of Si and Ge or GeSn, were grown by means of molecular beam epitaxy. Afterwards, deep trenches were now etched between the detectors in a MEMS process to minimize crosstalk between neighboring pixels. The detectors were structured then using CMOS processes, and the backside is polished or structured. Finally, a two layer frontside-metallization is applied for the contacts. We demonstrate the functionality of both two-dimensional and linear detector arrays and show possible applications such as NIR cameras or NIR spectrometers.

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Arnob, Md Masud Parvez, Hung Nguyen, Zhu Han i Wei-Chuan Shih. "Compressed sensing hyperspectral imaging in the 09–25 μm shortwave infrared wavelength range using a digital micromirror device and InGaAs linear array detector". Applied Optics 57, nr 18 (12.06.2018): 5019. http://dx.doi.org/10.1364/ao.57.005019.

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LI, SHENG S. "MULTI-COLOR, BROADBAND QUANTUM WELL INFRARED PHOTODETECTORS FOR MID-, LONG-, AND VERY LONG-WAVELENGTH INFRARED APPLICATIONS". International Journal of High Speed Electronics and Systems 12, nr 03 (wrzesień 2002): 761–801. http://dx.doi.org/10.1142/s0129156402001691.

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Quantum well infrared photodetectors (QWIPs) have been widely investigated for the 3–5 μm mid-wavelength infrared (MWIR) and 8–12 μm long-wavelength infrared (LWIR) atmospheric spectral windows as well as very long wavelength infrared (VLWIR: λc > 14 μm) imaging array applications in the past decade. The mature III-V compound semiconductor growth technology and the design flexibility of device structures have led to the rapid development of various QWIP structures for infrared focal plane arrays (FPAs) applications. In addition to the single-color QWIP with narrow bandwidth, multi-color or broadband QWIPs required for advanced IR sensing and imaging applications have also emerged in recent years. Using band gap engineering approach, the multi-color (2, 3, and 4-color) QWIPs with multi-stack quantum wells and voltage-tunable asymmetrical coupled quantum well structures for detection in the MWIR, LWIR, and VLWIR bands have been demonstrated recently. The triple-coupled (TC-) QWIP employs the quantum confined Stark effect to tune the peak detection wavelength by the applied bias voltage, A typical single-color QWIP exhibits a rather narrow spectral bandwidth of 1 to 2 μm. For certain applications, such as spectroscopy, sensing of a broader range of infrared radiation is highly desirable. Using the stacked quantum wells with different well width and depth, the digital-graded superlattice barrier (DGSLB) or the linear-graded barrier (LGB) structures, broadband (BB-) QWIPs covering the 8–14 μm atmospheric spectral window have been reported recently. In this chapter, the basic operation principles of a QWIP, and the design, fabrication, and characterization of multi-color and broadband QWIPs based on the GaAs/AlGaAs and InGaAs/AlGaAs material systems for the MW/LW/VLWIR applications are depicted.

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Yermolayev, D. M., E. A. Polushkin, S. Yu Shapoval, V. V. Popov, K. V. Marem’yanin, V. I. Gavrilenko, N. A. Maleev i in. "Detection of Terahertz Radiation by Dense Arrays of InGaAs Transistors". International Journal of High Speed Electronics and Systems 24, nr 01n02 (marzec 2015): 1550002. http://dx.doi.org/10.1142/s0129156415500020.

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Detection of terahertz radiation by GaAs transistor structures has been studied experimentally. The two types of samples under study included dense arrays of HEMTs and large-apertures detectors. Arrays consisted of parallel and series chains with asymmetric gate transistors for enhanced photoresponse on terahertz radiation. We investigated two types of wide-aperture detectors: grating gate detector, and single gate detector with bow-tie antenna. Wide-aperture detectors were symmetrical. Studies of transistor chains have shown that two essential features for this type of detector are the presence of asymmetry in the gate, and the type of connection between individual transistors themselves. Wide-aperture detectors have also been tested by narrow beams of terahertz radiation, which allows analyzing the role influence of individual parts of the detector for total sensitivity to terahertz excitation. The sensitivity and noise equivalent power of the detectors were evaluated.

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Moseley, A. J., M. Q. Kearley, R. C. Morris, J. Urquhart, M. J. Goodwin i G. Harris. "8×8 flipchip assembled InGaAs detector arrays for optical interconnect". Electronics Letters 27, nr 17 (1991): 1566. http://dx.doi.org/10.1049/el:19910981.

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Yang, Bo, Yizhen Yu, Guixue Zhang, Xiumei Shao i Xue Li. "Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures". Sensors 23, nr 14 (20.07.2023): 6556. http://dx.doi.org/10.3390/s23146556.

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A visible–extended shortwave infrared indium gallium arsenide (InGaAs) focal plane array (FPA) detector is the ideal choice for reducing the size, weight and power (SWaP) of infrared imaging systems, especially in low-light night vision and other fields that require simultaneous visible and near-infrared light detection. However, the lower quantum efficiency in the visible band has limited the extensive application of the visible–extended InGaAs FPA. Recently, a novel optical metasurface has been considered a solution for a high-performance semiconductor photoelectric device due to its highly controllable property of electromagnetic wave manipulation. Broadband Mie resonator arrays, such as nanocones and nanopillars designed with FDTD methods, were integrated on a back-illuminated InGaAs FPA as an AR metasurface. The visible–extended InGaAs detector was fabricated using substrate removal technology. The nanostructures integrated into the Vis-SWIR InGaAs detectors could realize a 10–20% enhanced quantum efficiency and an 18.8% higher FPA response throughout the wavelength range of 500–1700 nm. Compared with the traditional AR coating, nanostructure integration has advantages, such as broadband high responsivity and omnidirection antireflection, as a promising route for future Vis-SWIR InGaAs detectors with higher image quality.

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Rozprawy doktorskie na temat "InGaAs Linear Detector Arrays"

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Henderson, Christopher M. Jr. "Characterization of high efficiency neutron detector linear arrays". Thesis, Manhattan, Kan. : Kansas State University, 2009. http://hdl.handle.net/2097/2126.

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Masucci, Antonia Maria. "Moments method for random matrices with applications to wireless communication". Thesis, Supélec, 2011. http://www.theses.fr/2011SUPL0011/document.

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Dans cette thèse, on étudie l'application de la méthode des moments pour les télécommunications. On analyse cette méthode et on montre son importance pour l'étude des matrices aléatoires. On utilise le cadre de probabilités libres pour analyser cette méthode. La notion de produit de convolution/déconvolution libre peut être utilisée pour prédire le spectre asymptotique de matrices aléatoires qui sont asymptotiquement libres. On montre que la méthode de moments est un outil puissant même pour calculer les moments/moments asymptotiques de matrices qui n'ont pas la propriété de liberté asymptotique. En particulier, on considère des matrices aléatoires gaussiennes de taille finie et des matrices de Vandermonde al ?eatoires. On développe en série entiére la distribution des valeurs propres de differents modèles, par exemple les distributions de Wishart non-centrale et aussi les distributions de Wishart avec des entrées corrélées de moyenne nulle. Le cadre d'inference pour les matrices des dimensions finies est suffisamment souple pour permettre des combinaisons de matrices aléatoires. Les résultats que nous présentons sont implémentés en code Matlab en générant des sous-ensembles, des permutations et des relations d'équivalence. On applique ce cadre à l'étude des réseaux cognitifs et des réseaux à forte mobilité. On analyse les moments de matrices de Vandermonde aléatoires avec des entrées sur le cercle unitaire. On utilise ces moments et les détecteurs à expansion polynomiale pour décrire des détecteurs à faible complexité du signal transmis par des utilisateurs mobiles à une station de base (ou avec deux stations de base) représentée par des réseaux linéaires uniformes
In this thesis, we focus on the analysis of the moments method, showing its importance in the application of random matrices to wireless communication. This study is conducted in the free probability framework. The concept of free convolution/deconvolution can be used to predict the spectrum of sums or products of random matrices which are asymptotically free. In this framework, we show that the moments method is very appealing and powerful in order to derive the moments/asymptotic moments for cases when the property of asymptotic freeness does not hold. In particular, we focus on Gaussian random matrices with finite dimensions and structured matrices as Vandermonde matrices. We derive the explicit series expansion of the eigenvalue distribution of various models, as noncentral Wishart distributions, as well as correlated zero mean Wishart distributions. We describe an inference framework so flexible that it is possible to apply it for repeated combinations of random ma- trices. The results that we present are implemented generating subsets, permutations, and equivalence relations. We developped a Matlab routine code in order to perform convolution or deconvolution numerically in terms of a set of input moments. We apply this inference framework to the study of cognitive networks, as well as to the study of wireless networks with high mobility. We analyze the asymptotic moments of random Vandermonde matrices with entries on the unit circle. We use them and polynomial expansion detectors in order to design a low complexity linear MMSE decoder to recover the signal transmitted by mobile users to a base station or two base stations, represented by uniform linear arrays

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Książki na temat "InGaAs Linear Detector Arrays"

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United States. National Aeronautics and Space Administration., red. Evaluation of selected detector arrays for space applications: Final report, June 1, 1982 - June 30, 1985. Princeton, N.J: Princeton University Observatory, 1986.

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Performance of multiplexed GE:GA detector arrays in the far infrared. Moffett Field, Calif: National Aeronautics and Space Administration, Ames Research Center, 1990.

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Streszczenia konferencji na temat "InGaAs Linear Detector Arrays"

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Zimmermann, Lars, Joachim John, Martijn de Weerd, Martin Slaman, Stefan Nemeth, Patrick Merken, Staf Borghs i Chris A. Van Hoof. "InGaAs on GaAs extended wavelength linear detector arrays". W Symposium on Integrated Optics, redaktorzy Gail J. Brown i Manijeh Razeghi. SPIE, 2001. http://dx.doi.org/10.1117/12.429396.

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Li, Xue, Hengjing Tang, Guangyu Fan, Dafu Liu, Xiumei Shao, Yonggang Zhang, Haiyan Zhang i in. "256×1 element linear InGaAs short wavelength near-infrared detector arrays". W Photonics Asia 2007, redaktorzy Yi Cai, Haimei Gong i Jean-Pierre Chatard. SPIE, 2007. http://dx.doi.org/10.1117/12.755599.

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Zhang, Kefeng, Hengjing Tang, Xiaoli Wu, Xue Li, Yonggang Zhang i Haimei Gong. "Performance analysis of 256 element linear 2.4μm InGaAs photovoltaic detector arrays". W Photonics Asia 2007, redaktorzy Yi Cai, Haimei Gong i Jean-Pierre Chatard. SPIE, 2007. http://dx.doi.org/10.1117/12.755774.

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Joshi, Abhay M., Vladimir S. Ban, S. M. Mason, M. Kazakia i Walter F. Kosonocky. "512- and 1024-element linear InGaAs detector arrays for near-infrared (1-3μm) environmental sensing". W San Diego '92, redaktor Wagih H. Makky. SPIE, 1992. http://dx.doi.org/10.1117/12.138633.

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Zhu, Yaoming, Xue Li, Jun Wei, Jianwei Li, Hengjing Tang i Hai-mei Gong. "Analysis of cross talk in high density mesa linear InGaAs detector arrays using tiny light dot". W 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), redaktorzy Yadong Jiang, Junsheng Yu i Zhifeng Wang. SPIE, 2012. http://dx.doi.org/10.1117/12.975736.

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Malchow, Douglas S., Robert M. Brubaker i Marc P. Hansen. "Development of linear array ROIC for InGaAs detector arrays with wavelength response to 2.5 microns for NIR spectroscopy and machine vision". W SPIE Defense and Security Symposium, redaktorzy Bjørn F. Andresen, Gabor F. Fulop i Paul R. Norton. SPIE, 2008. http://dx.doi.org/10.1117/12.778231.

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Xu, Qinfei, i Dafu Liu. "InGaAs detector arrays hermetic encapsulation technology". W Photonics Asia 2010, redaktorzy Xuping Zhang, Hai Ming i Alan Xiaolong Wang. SPIE, 2010. http://dx.doi.org/10.1117/12.870098.

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Gasparian, George A., i Peter M. Schaeffer. "Advances in InGaAs multielement linear arrays". W Photonics East '99, redaktorzy Robert J. Nordstrom i Wim A. de Groot. SPIE, 1999. http://dx.doi.org/10.1117/12.372939.

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Olsen, G. H., A. M. Joshi, S. M. Mason, K. M. Woodruff, E. Mykietyn, V. S. Ban, M. J. Lange, J. Hladky, G. C. Erickson i G. A. Gasparian. "Room-Temperature InGaAs Detector Arrays For 2.5 µm". W 33rd Annual Techincal Symposium, redaktor Irving J. Spiro. SPIE, 1990. http://dx.doi.org/10.1117/12.978604.

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Joshi, Abhay M., Rene Brown, Eugene A. Fitzgerald, Xinde Wang, Steve M. Ting i Mayank T. Bulsara. "Monolithic InGaAs-on-silicon shortwave infrared detector arrays". W Photonics West '97, redaktorzy Gail J. Brown i Manijeh Razeghi. SPIE, 1997. http://dx.doi.org/10.1117/12.271192.

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Raporty organizacyjne na temat "InGaAs Linear Detector Arrays"

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Sullivan, Roger, John Franklin i James Heagy. Flash Lidar: Monte Carlo Estimates of Ballistic, Diffuse, and Noise Photons as Recorded by Linear and Geiger Detector Arrays. Fort Belvoir, VA: Defense Technical Information Center, marzec 2004. http://dx.doi.org/10.21236/ada426529.

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