Zaloguj się

Gotowe bibliografie tematyczne / Indium selenid / Artykuły w czasopismach

Artykuły w czasopismach na temat „Indium selenid”

Kliknij ten link, aby zobaczyć inne rodzaje publikacji na ten temat: Indium selenid.

Autor: Grafiati

Data publikacji: 25 maja 2024

Utwórz poprawne odniesienie w stylach APA, MLA, Chicago, Harvard i wielu innych

Wybierz rodzaj źródła:

Sprawdź 50 najlepszych artykułów w czasopismach naukowych na temat „Indium selenid”.

Przycisk „Dodaj do bibliografii” jest dostępny obok każdej pracy w bibliografii. Użyj go – a my automatycznie utworzymy odniesienie bibliograficzne do wybranej pracy w stylu cytowania, którego potrzebujesz: APA, MLA, Harvard, Chicago, Vancouver itp.

Możesz również pobrać pełny tekst publikacji naukowej w formacie „.pdf” i przeczytać adnotację do pracy online, jeśli odpowiednie parametry są dostępne w metadanych.

Przeglądaj artykuły w czasopismach z różnych dziedzin i twórz odpowiednie bibliografie.

1

Ivanauskas, Algimantas, Remigijus Ivanauskas i Ingrida Ancutiene. "Effect of In-Incorporation and Annealing on CuxSe Thin Films". Materials 14, nr 14 (8.07.2021): 3810. http://dx.doi.org/10.3390/ma14143810.

Pełny tekst źródła

Streszczenie:

A study of indium-incorporated copper selenide thin-film deposition on a glass substrate using the successive ionic adsorption and reaction method (SILAR) and the resulting properties is presented. The films were formed using these steps: selenization in the solution of diseleniumtetrathionate acid, treatment with copper(II/I) ions, incorporation of indium(III), and annealing in an inert nitrogen atmosphere. The elemental and phasal composition, as well as the morphological and optical properties of obtained films were determined. X-ray diffraction data showed a mixture of various compounds: Se, Cu0.87Se, In2Se3, and CuInSe2. The obtained films had a dendritic structure, agglomerated and not well-defined grains, and a film thickness of ~90 μm. The band gap values of copper selenide were 1.28–1.30 eV and increased after indium-incorporation and annealing. The optical properties of the formed films correspond to the optical properties of copper selenide and indium selenide semiconductors.

Style APA, Harvard, Vancouver, ISO itp.

2

Song, Nahong, Hong Ling, Yusheng Wang, Liying Zhang, Yuye Yang i Yu Jia. "Intriguing electronic properties of germanene/ indium selenide and antimonene/ indium selenide heterostructures". Journal of Solid State Chemistry 269 (styczeń 2019): 513–20. http://dx.doi.org/10.1016/j.jssc.2018.10.031.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

3

Kabanov V. F., Mikhailov A. I. i Gavrikov M. V. "Investigation of the features of electronic spectrum of quantum dots in narrow-gap semiconductors". Technical Physics Letters 48, nr 8 (2022): 47. http://dx.doi.org/10.21883/tpl.2022.08.55061.19220.

Pełny tekst źródła

Streszczenie:

Samples with quantum dots (QDs) of narrow-gap semiconductors of the A3B5 group (indium antimonide) and the A2B6 group (mercury selenide) have been studied. The absorption spectra of the investigated QDs are analyzed and the correspondence of the maxima in the spectral characteristics to the model representations of the calculated electronic energy spectrum for this materials is assessed. It is concluded that used model representations requires refinement, primarily due to the fact that studied objects are nanocrystals with complex geometry. Keywords: quantum dots, indium antimonide, mercury selenide, electronic energy spectrum.

Style APA, Harvard, Vancouver, ISO itp.

4

Katerynchuk, V. M. "Photoemission spectra of indium selenide". Semiconductor physics, quantum electronics and optoelectronics 9, nr 4 (15.12.2006): 36–39. http://dx.doi.org/10.15407/spqeo9.04.036.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

5

Massaccesi, Sylvie, Sylvie Sanchez i Jacques Vedel. "Electrodeposition of indium selenide in2se3". Journal of Electroanalytical Chemistry 412, nr 1-2 (sierpień 1996): 95–101. http://dx.doi.org/10.1016/0022-0728(96)04604-9.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

6

Katee, Narjes Sadeq, Oday Ibraheem Abdullah i Emad Talib Hashim. "Extracting Four Solar Model Electrical Parameters of Mono-Crystalline Silicon (mc-Si) and Thin Film (CIGS) Solar Modules using Different Methods". Journal of Engineering 27, nr 4 (29.03.2021): 16–32. http://dx.doi.org/10.31026/j.eng.2021.04.02.

Pełny tekst źródła

Streszczenie:

Experimental measurements were done for characterizing current-voltage and power-voltage of two types of photovoltaic (PV) solar modules; monocrystalline silicon (mc-Si) and copper indium gallium di-selenide (CIGS). The conversion efficiency depends on many factors, such as irradiation and temperature. The assembling measures as a rule cause contrast in electrical boundaries, even in cells of a similar kind. Additionally, if the misfortunes because of cell associations in a module are considered, it is hard to track down two indistinguishable photovoltaic modules. This way, just the I-V, and P-V bends' trial estimation permit knowing the electrical boundaries of a photovoltaic gadget with accuracy. This measure gives extremely significant data to the plan, establishment, and upkeep of PV frameworks. Three methods, simplified explicit, slope, and iterative, are used to compute two solar models' parameters using MATLAB code. The percentage maximum power errors at (600 and 1000) W/m2 for both current-voltage and power-voltage values with the corresponding measured ones using the slope method are 0.5% and 3% for monocrystalline silicon copper indium gallium di-selenide, respectively. The iterative method is 5 % and 10% for monocrystalline silicon and copper indium gallium di-selenide. Finally, for the simplified explicit 8% and 9%, for monocrystalline silicon and copper indium gallium di-selenide, respectively. The slope method gives more close results with the corresponding measured values than the other two methods for the two PV solar modules used. Consequently, the slope method is less influenced by the meteorological condition.

Style APA, Harvard, Vancouver, ISO itp.

7

Ramanujam, Jeyakumar, i Udai P. Singh. "Copper indium gallium selenide based solar cells – a review". Energy & Environmental Science 10, nr 6 (2017): 1306–19. http://dx.doi.org/10.1039/c7ee00826k.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

8

Niu, Xianghong, Yunhai Li, Yehui Zhang, Qijing Zheng, Jin Zhao i Jinlan Wang. "Highly efficient photogenerated electron transfer at a black phosphorus/indium selenide heterostructure interface from ultrafast dynamics". Journal of Materials Chemistry C 7, nr 7 (2019): 1864–70. http://dx.doi.org/10.1039/c8tc06208k.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

9

Sun, Maojun, Wei Wang, Qinghua Zhao, Xuetao Gan, Yuanhui Sun, Wanqi Jie i Tao Wang. "ε-InSe single crystals grown by a horizontal gradient freeze method". CrystEngComm 22, nr 45 (2020): 7864–69. http://dx.doi.org/10.1039/d0ce01271h.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

10

Rahman, Md Ferdous, Mithun Chowdhury, Latha Marasamy, Mustafa K. A. Mohammed, Md Dulal Haque, Sheikh Rashel Al Ahmed, Ahmad Irfan, Aijaz Rasool Chaudhry i Souraya Goumri-Said. "Improving the efficiency of a CIGS solar cell to above 31% with Sb₂S₃ as a new BSF: a numerical simulation approach by SCAPS-1D". RSC Advances 14, nr 3 (2024): 1924–38. http://dx.doi.org/10.1039/d3ra07893k.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

11

Mondal, Bipanko Kumar, Shaikh Khaled Mostaque, Md Ariful Islam i Jaker Hossain. "Stress-induced phase-alteration in solution processed indium selenide thin films during annealing". RSC Advances 11, nr 23 (2021): 13751–62. http://dx.doi.org/10.1039/d1ra01403j.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

12

Stoll, Sarah L., Edward G. Gillan i Andrew R. Barron. "Chemical vapor deposition of Gallium selenide and indium selenide nanoparticles". Chemical Vapor Deposition 2, nr 5 (wrzesień 1996): 182–84. http://dx.doi.org/10.1002/cvde.19960020506.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

13

Jamel Kadia, Noor, Emad T. Hashim i Oday I. Abdullah. "PERFORMANCE OF DIFFERENT PHOTOVOLTAIC TECHNOLOGIES FOR AMORPHOUS SILICON (A-SI) AND COPPER INDIUM GALLIUM DI-SELENIDE (CIGS) PHOTOVOLTAIC MODULES". Journal of Engineering and Sustainable Development 26, nr 1 (3.01.2022): 95–105. http://dx.doi.org/10.31272/jeasd.26.1.10.

Pełny tekst źródła

Streszczenie:

In this work, the analysis of performance of two types of photovoltaic (PV) (Amorphous Silicon (a-Si) Copper Indium Gallium Diselenide (CIGS) technologies were achieved out under under Iraqi (Baghdad)climate conditions. The elevation of the selected site is 9 m above ground level. The experimental work covered the eight commercially available PV technologies. The two technologies that employed in this work are, Amorphous Silicon (a-Si) and Copper Indium Gallium Diselenide (CIGS). The total period of the experimental work was 7 months, and the data were analyzed simultaneously. Special attention is given to the influence of temperature and solar radiation the performance of the PV modules. Where, it was proposed a simple I-V curve test for PV modules. The results showed that the proposed system successfully experimentally extracted I-V curves of the selected two PV modules (amorphous and CIGS solar modules). The maximum values of power (Pmax) at solar radiation intensity 750 W/m² are 2.742 W, and 2.831 W for amorphous silicon and copper indium gallium di-selenide respectively. This is occurred because the lowest solar module operating temperature (19 oC and 17 oC for solar radiation 750 and 1000 W/m2 respectively) and ambient temperature (7 oC) and for Jan., 2021 than other months. Consequently, the same behavior for the two modules at solar irradiance 1000 W/m2 with the highest power value; 2.680 W, and 3.198 W of amorphous silicon and copper indium gallium di-selenide respectively. Furthermore, the minimum values of power (Pmax) at solarradiation intensity 750 W/m² are 2.530, and 2.831 for amorphous silicon and copper indium gallium di-selenide respectively because we have the highest solar module operating temperature (57 oC, and 55 oC respectively) and ambient temperature (45 oC) for April, 2021 than other months. Consequently, the same behavior for the two modules at solar irradiance 1000 W/m2 with the highest power value; 2.680 W, and 3.198 W of amorphous silicon and copper indium gallium di-selenide respectively. The highest efficiency can be notes for CIGS solar module with a value 7.3%, while the lowest one is 5.5% for amorphous solar module.

Style APA, Harvard, Vancouver, ISO itp.

14

Zhao, Qinghua, Wei Wang, Felix Carrascoso-Plana, Wanqi Jie, Tao Wang, Andres Castellanos-Gomez i Riccardo Frisenda. "The role of traps in the photocurrent generation mechanism in thin InSe photodetectors". Materials Horizons 7, nr 1 (2020): 252–62. http://dx.doi.org/10.1039/c9mh01020c.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

15

Cruz, R. M. de la, R. Pareja, A. Segura i A. Chevy. "Positron lifetime experiments in indium selenide". Journal of Physics C: Solid State Physics 21, nr 24 (30.08.1988): 4403–8. http://dx.doi.org/10.1088/0022-3719/21/24/006.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

16

Yu, Bin, Sanghyun Ju, Xuhui Sun, Garrick Ng, Thuc Dinh Nguyen, M. Meyyappan i David B. Janes. "Indium selenide nanowire phase-change memory". Applied Physics Letters 91, nr 13 (24.09.2007): 133119. http://dx.doi.org/10.1063/1.2793505.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

17

Badikov, V. V., V. I. Chizhikov, V. V. Efimenko, T. D. Efimenko, V. L. Panyutin, G. S. Shevyrdyaeva i S. I. Scherbakov. "Optical properties of lithium indium selenide". Optical Materials 23, nr 3-4 (wrzesień 2003): 575–81. http://dx.doi.org/10.1016/s0925-3467(03)00024-7.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

18

Riera, J., A. Segura i A. Chevy. "Segregation of Silicon in Indium Selenide". Physica Status Solidi (a) 132, nr 1 (16.07.1992): K19—K21. http://dx.doi.org/10.1002/pssa.2211320129.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

19

Tamalampudi, Srinivasa Reddy, Raman Sankar, Harry Apostoleris, Mariam Ali Almahri, Boulos Alfakes, Abdulrahman Al-Hagri, Ru Li i in. "Thickness-Dependent Resonant Raman and E′ Photoluminescence Spectra of Indium Selenide and Indium Selenide/Graphene Heterostructures". Journal of Physical Chemistry C 123, nr 24 (28.05.2019): 15345–53. http://dx.doi.org/10.1021/acs.jpcc.9b03457.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

20

Wagh, B. G., Anuradha B. Bhalerao, R. N. Bulakhe i C. D. Lokhande. "Cadmium indium selenide semiconducting nanofibers by single step electrochemical route". Modern Physics Letters B 29, nr 06n07 (20.03.2015): 1540024. http://dx.doi.org/10.1142/s0217984915400242.

Pełny tekst źródła

Streszczenie:

The growth of ternary semiconductor thin films of cadmium indium selenide nanofibers has been carried out from aqueous solution of cadmium sulphate, indium trichloride, and selenium dioxide by electrochemical route. These thin films have been further optimized using photoelectrochemical cell (PEC). Optimized thin film has been characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

Style APA, Harvard, Vancouver, ISO itp.

21

Mohamad, S. A., Wan Jeffrey Basirun, Z. A. Ibrahim, A. K. Arof i Mehdi Ebadi. "Structure Characterization of Electrodeposited Zinc Selenide Thin Films". Advanced Materials Research 264-265 (czerwiec 2011): 732–37. http://dx.doi.org/10.4028/www.scientific.net/amr.264-265.732.

Pełny tekst źródła

Streszczenie:

Crystalline thin of zinc selenide have been electrochemically deposited on conducting substrates of indium tin oxide, ITO glass. Initial investigation with voltammetry was done and shows that the zinc selenide films were stable towards oxidation. The best deposition potential obtained was at -0.95 V vs. Ag /AgCl while at lower deposition potentials, the films do not form well. Energy Dispersive Analysis and X-Ray spectrum indicate that the films deposited at 65oC and -0.95 V vs. Ag/AgCl have nearly stoichiometric Zn: Se ratio.

Style APA, Harvard, Vancouver, ISO itp.

22

Sun, Yuanhui, Shulin Luo, Xin-Gang Zhao, Koushik Biswas, Song-Lin Li i Lijun Zhang. "InSe: a two-dimensional material with strong interlayer coupling". Nanoscale 10, nr 17 (2018): 7991–98. http://dx.doi.org/10.1039/c7nr09486h.

Pełny tekst źródła

Streszczenie:

Interlayer coupling in atomically thin, two-dimensional indium selenide (InSe) may have a significant impact on its properties, including large tunability in the band gap, height of band-edge state, phonon frequency, and high carrier mobility.

Style APA, Harvard, Vancouver, ISO itp.

23

Jakhmola, Priyanka R., Garima Agarwal, Prafulla K. Jha i Satya Prakash Bhatnagar. "Nanorod Formation of Copper Indium (di) Selenide Nanorod Synthesize by Solvothermal Route". Advanced Materials Research 1047 (październik 2014): 107–11. http://dx.doi.org/10.4028/www.scientific.net/amr.1047.107.

Pełny tekst źródła

Streszczenie:

The compound belongs to I-III-VI2 group are promising material as an effective light-absorbing materials. Now a day, ternary chalcopyrite semiconductors, especially copper based I-III-VI2 semiconductors have attracted many investigators. They have several desirable features as absorbers in the thin film solar cells. In present work, copper indium (di) selenide have been prepared via solvothermal route. Several methods have been reported to prepare CuInSe2 nanostructures by solution route. In present work, tetragonal chalcopyrite copper indium (di) selenide nanorods has been synthesized by solvothermal method using ethylene diamine as a solvent. Structural analysis had been done by X-ray diffraction (XRD). The surface morphology of the as-grown nanorod has been studied using scanning electron microscopy. The bandgap of as grown nanorods is obtained from UV-Vis spectrum which will applicable to the solar cell devices.

Style APA, Harvard, Vancouver, ISO itp.

24

Yang, Shuang, Cheng-Yan Xu, Li Yang, Sheng-Peng Hu i Liang Zhen. "Solution-phase synthesis of γ-In2Se3 nanoparticles for highly efficient photocatalytic hydrogen generation under simulated sunlight irradiation". RSC Advances 6, nr 108 (2016): 106671–75. http://dx.doi.org/10.1039/c6ra21784b.

Pełny tekst źródła

Streszczenie:

Hexagonal indium selenide (In₂Se₃) nanoparticles were successfully synthesized by a hot-injection method using triethylene glycol as solvent, which have superior and stable photocatalytic hydrogen generation under simulated sunlight irradiation.

Style APA, Harvard, Vancouver, ISO itp.

25

Chen, Tenghui, Zhongjun Li, Chunxiang Zhang, Zhenhong Wang, Mulin Luo, Yuan Zhang, Yachao Wang, Quanlan Xiao, Han Zhang i Jun Liu. "Indium selenide for Q-switched pulse generation in a mid-infrared fiber laser". Journal of Materials Chemistry C 9, nr 18 (2021): 5893–98. http://dx.doi.org/10.1039/d1tc00727k.

Pełny tekst źródła

Streszczenie:

A novel broadband two-dimensional material, indium selenide (InSe), is prepared and characterized in the mid-infrared wavelength region. Stable Q-switching pulses are obtained from a 2.8 μm Er-ZBLAN fiber laser based on the InSe saturable absorber.

Style APA, Harvard, Vancouver, ISO itp.

26

STOLL, S. L., E. G. GILLAN i A. R. BARRON. "ChemInform Abstract: Chemical Vapor Deposition of Gallium Selenide and Indium Selenide Nanoparticles." ChemInform 27, nr 51 (4.08.2010): no. http://dx.doi.org/10.1002/chin.199651219.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

27

Kaminskii, V. M., Z. D. Kovalyuk, V. I. Ivanov, I. G. Tkachyuk i V. V. Netyaga. "Electrical Properties of Cd Doped InSe Crystals". Фізика і хімія твердого тіла 19, nr 2 (3.05.2019): 159–62. http://dx.doi.org/10.15330/pcss.19.2.159-162.

Pełny tekst źródła

Streszczenie:

The measurements of electrical conductivity along (alternating electric field) and across (direct electric field)the crystallographic C axis of Cd‐doped indium selenide single crystals are carried out. The parameters of thehopping conductivity of InSe <Cd> are calculated.

Style APA, Harvard, Vancouver, ISO itp.

28

Rai, Akash, Vinod K. Sangwan, J. Tyler Gish, Mark C. Hersam i David G. Cahill. "Anisotropic thermal conductivity of layered indium selenide". Applied Physics Letters 118, nr 7 (15.02.2021): 073101. http://dx.doi.org/10.1063/5.0042091.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

29

Zheng, Kai, Heping Cui, Jiabing Yu i Xianping Chen. "Indium Selenide/Antimonene Heterostructure for Multifunctional Optoelectronics". IEEE Transactions on Electron Devices 69, nr 3 (marzec 2022): 1155–61. http://dx.doi.org/10.1109/ted.2022.3140363.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

30

Trah, H. P., i V. Krämer. "Crystal structure of zinc indium selenide, ZnIn2Se4". Zeitschrift für Kristallographie 173, nr 3-4 (styczeń 1985): 199–203. http://dx.doi.org/10.1524/zkri.1985.173.3-4.199.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

31

Kulakci, Mustafa, Tahir Colakoglu, Baris Ozdemir, Mehmet Parlak, Husnu Emrah Unalan i Rasit Turan. "Silicon nanowire–silver indium selenide heterojunction photodiodes". Nanotechnology 24, nr 37 (23.08.2013): 375203. http://dx.doi.org/10.1088/0957-4484/24/37/375203.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

32

Geretovszky, Zs, K. Deppert, L. S. Karlsson, M. N. A. Karlsson, J. O. Malm i M. Mühlberg. "Aerosol Phase Generation of Indium–Selenide Nanoparticles". Journal of Nanoscience and Nanotechnology 6, nr 3 (1.03.2006): 600–611. http://dx.doi.org/10.1166/jnn.2006.084.

Pełny tekst źródła

Streszczenie:

Results on the generation and heat treatment of In–Se nanoparticles, made by heterogeneous condensation of selenium on indium nanoparticles synthesised via the evaporation/condensation route are reported. In-situ aerosol measurements are complemented with ex-situ analysis, to provide structural, morphological, and compositional information on the In–Se nanoparticles. Our results indicate that prior to heat treatment In–Se nanoparticles have a shape in the aerosol phase, similar to an asymmetric dumbbell. The bigger particle of the dumbbell structure is made up of amorphous Se, while the overall composition of the polycrystalline smaller particle is around InSe. The smaller particle has an intrinsic structure, and consists of different InSe-compounds, with a decreasing In content towards the shell. The shape of the In–Se nanoparticles is different in the aerosol phase and on the surface of the samples. The observed variety of particle sizes and shapes on the sample surface is shown to be partly due to the agglomeration of the aerosol phase binaries (i.e., dumbbells) via coalescence on the surface of the sample and wetting of the sample surface by the Se nanoparticles. These processes make the bigger particle of the dumbbell structure appear almost perfectly hemispherical on the sample surfaces. During heat treatment at lower temperatures mainly the evaporative removal of the big Se particle of the dumbbell structure will take place. Annealing of the smaller particles starts to dominate at temperatures above 240 °C and makes the composition of the small particles closer to that of the thermodynamically most favoured In2Se3.

Style APA, Harvard, Vancouver, ISO itp.

33

Paraskevopoulos, K. M., C. Julien, M. Balkanski i C. Porte. "Photoluminescence spectra of Li-intercalated indium selenide". Journal of Luminescence 42, nr 1 (czerwiec 1988): 15–20. http://dx.doi.org/10.1016/0022-2313(88)90060-9.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

34

El-Sayed, S. M. "Optical investigations of the indium selenide glasses". Vacuum 72, nr 2 (październik 2003): 169–75. http://dx.doi.org/10.1016/s0042-207x(03)00139-8.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

35

Mar�, B., A. Segura i A. Chevy. "Tin-related shallow donor in indium selenide". Applied Physics A Solids and Surfaces 46, nr 2 (czerwiec 1988): 125–29. http://dx.doi.org/10.1007/bf00615920.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

36

Riera, J., A. Segura i A. Chevy. "Photoluminescence in silicon-doped n-indium selenide". Physica Status Solidi (a) 142, nr 1 (16.03.1994): 265–74. http://dx.doi.org/10.1002/pssa.2211420129.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

37

Thornton, John A., i T. C. Lommasson. "Magnetron reactive sputtering of copper-indium-selenide". Solar Cells 16 (styczeń 1986): 165–80. http://dx.doi.org/10.1016/0379-6787(86)90082-7.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

38

MASSACCESI, S., S. SANCHEZ i J. VEDEL. "ChemInform Abstract: Electrodeposition of Indium Selenide In2Se3." ChemInform 27, nr 51 (4.08.2010): no. http://dx.doi.org/10.1002/chin.199651021.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

39

Lukyanyuk, V. K., M. V. Tovarnitskii i Z. D. Kovalyuk. "Transport properties of sodium intercalated indium selenide". Physica Status Solidi (a) 104, nr 1 (16.11.1987): K41—K45. http://dx.doi.org/10.1002/pssa.2211040145.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

40

Mucha, I. "Phase diagram for the quasi-binary thallium(I) selenide–indium(III) selenide system". Thermochimica Acta 550 (grudzień 2012): 1–4. http://dx.doi.org/10.1016/j.tca.2012.09.028.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

41

Mitzi, David B., Oki Gunawan, Teodor K. Todorov i D. Aaron R. Barkhouse. "Prospects and performance limitations for Cu–Zn–Sn–S–Se photovoltaic technology". Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 371, nr 1996 (13.08.2013): 20110432. http://dx.doi.org/10.1098/rsta.2011.0432.

Pełny tekst źródła

Streszczenie:

While cadmium telluride and copper–indium–gallium–sulfide–selenide (CIGSSe) solar cells have either already surpassed (for CdTe) or reached (for CIGSSe) the 1 GW yr −1 production level, highlighting the promise of these rapidly growing thin-film technologies, reliance on the heavy metal cadmium and scarce elements indium and tellurium has prompted concern about scalability towards the terawatt level. Despite recent advances in structurally related copper–zinc–tin–sulfide–selenide (CZTSSe) absorbers, in which indium from CIGSSe is replaced with more plentiful and lower cost zinc and tin, there is still a sizeable performance gap between the kesterite CZTSSe and the more mature CdTe and CIGSSe technologies. This review will discuss recent progress in the CZTSSe field, especially focusing on a direct comparison with analogous higher performing CIGSSe to probe the performance bottlenecks in Earth-abundant kesterite devices. Key limitations in the current generation of CZTSSe devices include a shortfall in open circuit voltage relative to the absorber band gap and secondarily a high series resistance, which contributes to a lower device fill factor. Understanding and addressing these performance issues should yield closer performance parity between CZTSSe and CdTe/CIGSSe absorbers and hopefully facilitate a successful launch of commercialization for the kesterite-based technology.

Style APA, Harvard, Vancouver, ISO itp.

42

Salloum, D., P. Gougeon i M. Potel. "Ho0.76In1.68Mo15Se19". Acta Crystallographica Section E Structure Reports Online 62, nr 4 (8.03.2006): i83—i85. http://dx.doi.org/10.1107/s1600536806007446.

Pełny tekst źródła

Streszczenie:

The structure of holmium indium molybdenum selenide, Ho0.76In1.68Mo15Se19, isotypic with In2.9Mo15Se19 [Grüttner, Yvon, Chevrel, Potel, Sergent & Seeber (1979). Acta Cryst. B35, 285–292], is characterized by two cluster units Mo6Se i 8Se a 6 and Mo9Se i 11Se a 6 (where i = inner and a = apical) that are present in a 1:1 ratio. The cluster units are centered at Wyckoff positions 2b and 2c and have point-group symmetry \overline{3} and \overline{6}, respectively. The clusters are interconnected through additional Mo—Se bonds. In the title compound, Ho3+ cations replace the trivalent indium observed in In2.9Mo15Se19, and a deficiency is observed on the monovalent indium site.

Style APA, Harvard, Vancouver, ISO itp.

43

Kushwah, Nisha, G. Kedarnath, A. Wadawale, Gourab Karmakar, Sanjay Kumar i Amit P. Srivastava. "Synthesis and characterization of methyl indium 4,6-dimethyl-2-pyrimidyl selenolates and its utility for indium selenide, CuInSe2 nanostructures and indium selenide thin films". Journal of Materials Research 37, nr 7 (1.04.2022): 1341–56. http://dx.doi.org/10.1557/s43578-022-00538-w.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

44

Rella, R., P. Siciliano i A. Tepore. "Deep Levels in Doped Indium Selenide Single Crystals". Materials Science Forum 203 (luty 1996): 65–70. http://dx.doi.org/10.4028/www.scientific.net/msf.203.65.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

45

Chitra, Venkatapathy, Kalimuthu Ananthi i S. Vasantha. "Photoelectrochemical Behaviour of Copper Indium Selenide Thin Films". Advanced Materials Research 678 (marzec 2013): 343–48. http://dx.doi.org/10.4028/www.scientific.net/amr.678.343.

Pełny tekst źródła

Streszczenie:

Copper Indium Selenide (CIS) thin films were pulse electrodeposited at room temperature and at different duty cycles in the range of 6 – 50 %. Deposition current density was kept constant at 5 ma cm-2 in the present work. The total deposition time was 60 min. The precursors used were AR grade 0.3 M of each CuCl2 and InCl3, along with 0.2 M of SeO2. Thickness of the films estimated by Mitutoyo surface profilometer varied in the range of 0.8 to 1.2 μm with increase of duty cycle. XRD patterns of CIS films deposited at different duty cycles exhibit the chalcopyrite structure. Composition of the films indicated Cu/In ratio is greater than 1. Optical absorption studies indicated a direct energy band gap of 0.95 eV. Surface morphology of the films indicated that the grain size increased from 15 nm to 40 nm as the duty cycle increased. It is observed that as the duty cycle increases, the resistvity increases from 1.0 ohm cm to 10 ohm cm. The films were used as photoelectrodes in 0.5 M polysulphide redox electrolyte (0.5 M each Na2S, NaOH, S). At 60 mW cm-2, an open circuit voltage of 0.465 V and short circuit current density of 3.87 mA cm-2 were observed for the films deposited at 50 % duty cycle.

Style APA, Harvard, Vancouver, ISO itp.

46

Segura, Alfredo. "Layered Indium Selenide under High Pressure: A Review". Crystals 8, nr 5 (9.05.2018): 206. http://dx.doi.org/10.3390/cryst8050206.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

47

Wang, Cheng, Xianhui Bu, Nanfeng Zheng i Pingyun Feng. "Indium selenide superlattices from (In10Se18)6– supertetrahedral clusters". Chemical Communications, nr 13 (22.05.2002): 1344–45. http://dx.doi.org/10.1039/b203253h.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

48

Yang, Jiwoong, Jae-Yup Kim, Jung Ho Yu, Tae-Young Ahn, Hyunjae Lee, Tae-Seok Choi, Young-Woon Kim, Jin Joo, Min Jae Ko i Taeghwan Hyeon. "Copper–indium–selenide quantum dot-sensitized solar cells". Physical Chemistry Chemical Physics 15, nr 47 (2013): 20517. http://dx.doi.org/10.1039/c3cp54270j.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

49

Tyrrell, Sophie, Małgorzata Swadźba-Kwaśny i Peter Nockemann. "Ionothermal, microwave-assisted synthesis of indium(iii) selenide". Journal of Materials Chemistry A 2, nr 8 (2014): 2616. http://dx.doi.org/10.1039/c3ta14478j.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

50

Riera, J., A. Segura i A. Chevy. "Transport properties of silicon doped n-indium selenide". Applied Physics A Solids and Surfaces 54, nr 5 (maj 1992): 428–30. http://dx.doi.org/10.1007/bf00324166.

Pełny tekst źródła

Style APA, Harvard, Vancouver, ISO itp.

Oferujemy zniżki na wszystkie plany premium dla autorów, których prace zostały uwzględnione w tematycznych zestawieniach literatury. Skontaktuj się z nami, aby uzyskać unikalny kod promocyjny!